JP3923462B2 - 薄膜トランジスタの作製方法 - Google Patents
薄膜トランジスタの作製方法 Download PDFInfo
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- JP3923462B2 JP3923462B2 JP2003344202A JP2003344202A JP3923462B2 JP 3923462 B2 JP3923462 B2 JP 3923462B2 JP 2003344202 A JP2003344202 A JP 2003344202A JP 2003344202 A JP2003344202 A JP 2003344202A JP 3923462 B2 JP3923462 B2 JP 3923462B2
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- 229910052712 strontium Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
- H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0814—Several active elements per pixel in active matrix panels used for selection purposes, e.g. logical AND for partial update
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- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3031—Two-side emission, e.g. transparent OLEDs [TOLED]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Liquid Crystal (AREA)
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Description
本実施の形態では、具体的な配線の作製方法について説明する。
本実施の形態では、導電体の溶媒に油(アルコール)系を用いる場合について説明する。
本実施の形態では、上記実施の形態で説明した配線の作製方法を用いて薄膜トランジスタを形成する例を説明する。なお光触媒物質としてTiO2を用いる。
本実施の形態では、上記実施の形態と異なる方法で薄膜トランジスタを形成する例を説明する。なお光触媒物質としてTiO2を用いる。
本実施の形態では、上記実施の形態と異なる方法で薄膜トランジスタを形成する例を説明する。なお光触媒物質としてTiO2を用いる。
その後、N型を有する半導体膜上に光触媒物質202としてTiO2を形成する。
TiO2の所望の領域に光照射を行い、照射領域203を形成する。照射領域は親水性を示す。
本実施の形態では、上記実施の形態と異なる方法で薄膜トランジスタを形成する例を説明する。なお光触媒物質としてTiO2を用いる。
本実施の形態では、上記実施の形態と異なる方法で薄膜トランジスタを形成する例を説明する。なお光触媒物質としてTiO2を用いる。
本実施の形態では、インクジェット法により薄膜トランジスタを覆うように保護膜を形成する場合を説明する。
本実施の形態では、上記実施の形態で示した薄膜トランジスタを有する発光装置について説明する。
本実施の形態では、上記実施の形態で示した薄膜トランジスタを有する発光装置と異なる発光装置について説明する。特に本実施の形態では、層間絶縁膜を形成することなく、配線204と電極215とを接続する薄膜トランジスタであって、電極215を覆うように土手や隔壁と呼ばれる絶縁膜302を形成する。
本実施の形態では、上記実施の形態で示した非晶質半導体膜を有する薄膜トランジスタを有する発光装置の等価回路図及び上面図を説明する。またTFTはゲート、ソース、ドレインの3端子を有するが、ソース端子(ソース電極)、ドレイン端子(ドレイン電極)に関しては、トランジスタの構造上、明確に区別が出来ない。よって、素子間の接続について説明する際は、ソース電極、ドレイン電極のうち一方を第1の電極、他方を第2の電極と表記する。
本実施の形態では、トップゲート型の薄膜トランジスタであって、一導電型を有する半導体膜をプラズマCVD法により形成しない構成を説明する。
本実施の形態では、結晶性半導体膜を用いた薄膜トランジスタについて説明する。
本実施の形態では、上記実施の形態と異なる方法により作製された、結晶性半導体膜を用いた薄膜トランジスタについて説明する。
本実施の形態では、結晶性半導体膜を用いた薄膜トランジスタを発光装置に用いる例を説明する。
本実施の形態では、上記実施の形態で示した薄膜トランジスタを有する液晶表示装置を形成する例を説明する。
本実施の形態では、上記薄膜トランジスタを形成するインクジェット装置(液滴吐出装置)を説明する。
本実施の形態では、上記実施の形態で示した発光装置や液晶表示装置等のモジュール形態を説明する。
本実施の形態では、上記実施の形態で示した発光装置や液晶表示装置の封止状態を説明する。
上記実施の形態で示した表示装置を用いた電子機器として、ビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、オーディオコンポ等)、ノート型パーソナルコンピュータ、ゲーム機器、携帯情報端末(モバイルコンピュータ、携帯電話、携帯型ゲーム機又は電子書籍等)、記録媒体を備えた画像再生装置(具体的にはDigital Versatile Disc(DVD)等の記録媒体を再生し、その画像を表示しうるディスプレイを備えた装置)などが挙げられる。特に、大型画面を有する大型テレビ等に上記実施の形態で示したインクジェット法を用いることが望ましい。それら電子機器の具体例を図16に示す。
Claims (12)
- 絶縁表面上に結晶性を有する半導体膜を形成し、
前記半導体膜を覆って光触媒機能を有する物質からなるゲート絶縁膜を形成し、
前記ゲート絶縁膜に選択的に光を照射して親水性とし、
前記光触媒機能を有する物質上であって、前記光が照射された領域に、水系の溶媒に導電体が混入された組成物を吐出してゲート電極を形成することを特徴とする薄膜トランジスタの作製方法。 - 絶縁表面上に結晶性を有する半導体膜を形成し、
前記半導体膜を覆って光触媒機能を有する物質からなるゲート絶縁膜を形成し、
前記ゲート絶縁膜に選択的に光を照射して親水性とし、
前記光触媒機能を有する物質上であって、前記光が照射された領域に、水系の溶媒に導電体が混入された組成物を吐出してゲート電極を形成し、
前記ゲート電極を用いて、前記ゲート絶縁膜をエッチングし、
前記ゲート電極を覆って金属膜を形成し、
前記半導体膜と前記金属膜を反応させてシリサイドを形成することを特徴とする薄膜トランジスタの作製方法。 - 請求項1又は2において、
前記物質上における光の照射領域の幅は、前記吐出された組成物の幅よりも狭いことを特徴とする薄膜トランジスタの作製方法。 - 絶縁表面上に結晶性を有する半導体膜を形成し、
前記半導体膜を覆って光触媒機能を有する物質からなるゲート絶縁膜を形成し、
前記ゲート絶縁膜に選択的に光を照射して撥油性とし、
前記光触媒機能を有する物質上であって、前記光が照射されない領域に、油系の溶媒に導電体が混入された組成物を吐出してゲート電極を形成することを特徴とする薄膜トランジスタの作製方法。 - 絶縁表面上に結晶性を有する半導体膜を形成し、
前記半導体膜を覆って光触媒機能を有する物質からなるゲート絶縁膜を形成し、
前記ゲート絶縁膜に選択的に光を照射して撥油性とし、
前記光触媒機能を有する物質上であって、前記光が照射されない領域に、油系の溶媒に導電体が混入された組成物を吐出してゲート電極を形成し、
前記ゲート電極を用いて、前記ゲート絶縁膜をエッチングし、
前記ゲート電極を覆って金属膜を形成し、
前記半導体膜と前記金属膜を反応させてシリサイドを形成することを特徴とする薄膜トランジスタの作製方法。 - 請求項4又は5において、
前記油系の溶媒は、非極性溶剤又は低極性溶剤であることを特徴とする薄膜トランジスタの作製方法。 - 請求項4乃至6のいずれか一において、
前記油系の溶媒は、テルピネオール、ミネラルスピリット、キシレン、トルエン、エチルベンゼン、メシチレン、ヘキサン、ヘプタン、オクタン、デカン、ドデカン、シクロヘキサン、及びシクロオクタンのいずれかであることを特徴とする薄膜トランジスタの作製方法。 - 請求項1乃至7のいずれか一において、
インクジェット法により、前記組成物を吐出することを特徴とする薄膜トランジスタの作製方法。 - 請求項1乃至8のいずれか一において、
減圧下において、前記組成物を吐出することを特徴とする薄膜トランジスタの作製方法。 - 請求項1乃至9のいずれか一において、
前記導電体は、金、銀、銅、白金、パラジウム、タングステン、ニッケル、タンタル、ビスマス、鉛、インジウム、錫、亜鉛、チタン、若しくはアルミニウム、又はこれらからなる合金でなることを特徴とする薄膜トランジスタの作製方法。 - 請求項1乃至10のいずれか一において、
前記導電体は、金、銀、銅、白金、パラジウム、タングステン、ニッケル、タンタル、ビスマス、鉛、インジウム、錫、亜鉛、チタン、又はアルミニウムからなる分散性ナノ粒子でなることを特徴とする薄膜トランジスタの作製方法。 - 請求項1乃至11のいずれか一において、
前記光の波長は、前記光触媒機能を有する物質が光活性を示す波長であることを特徴とする薄膜トランジスタの作製方法。
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US10/946,649 US7332432B2 (en) | 2003-10-02 | 2004-09-22 | Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same |
US11/970,318 US7534724B2 (en) | 2003-10-02 | 2008-01-07 | Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same |
US12/432,503 US7919411B2 (en) | 2003-10-02 | 2009-04-29 | Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same |
US13/034,771 US8105945B2 (en) | 2003-10-02 | 2011-02-25 | Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same |
US13/334,757 US20120094412A1 (en) | 2003-10-02 | 2011-12-22 | Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same |
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JP2004288898A (ja) * | 2003-03-24 | 2004-10-14 | Canon Inc | 太陽電池モジュールの製造方法 |
KR101100625B1 (ko) * | 2003-10-02 | 2012-01-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 배선 기판 및 그 제조방법, 및 박막트랜지스터 및 그제조방법 |
US7601994B2 (en) * | 2003-11-14 | 2009-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
WO2005050597A1 (en) * | 2003-11-14 | 2005-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
US8247965B2 (en) * | 2003-11-14 | 2012-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting display device and method for manufacturing the same |
US7439086B2 (en) | 2003-11-14 | 2008-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing liquid crystal display device |
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US20080176347A1 (en) | 2008-07-24 |
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US7534724B2 (en) | 2009-05-19 |
US8105945B2 (en) | 2012-01-31 |
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