JP4826742B2 - 薄膜デバイスの成膜方法 - Google Patents
薄膜デバイスの成膜方法 Download PDFInfo
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- JP4826742B2 JP4826742B2 JP2006000638A JP2006000638A JP4826742B2 JP 4826742 B2 JP4826742 B2 JP 4826742B2 JP 2006000638 A JP2006000638 A JP 2006000638A JP 2006000638 A JP2006000638 A JP 2006000638A JP 4826742 B2 JP4826742 B2 JP 4826742B2
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- film
- thin film
- glass substrate
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- ultraviolet light
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- 239000010409 thin film Substances 0.000 title claims description 62
- 238000000151 deposition Methods 0.000 title claims description 12
- 239000010408 film Substances 0.000 claims description 120
- 239000000758 substrate Substances 0.000 claims description 90
- 239000011521 glass Substances 0.000 claims description 72
- 238000000034 method Methods 0.000 claims description 42
- 230000001699 photocatalysis Effects 0.000 claims description 31
- 238000001459 lithography Methods 0.000 claims description 29
- 230000015572 biosynthetic process Effects 0.000 claims description 27
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 20
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 79
- 239000002245 particle Substances 0.000 description 29
- 230000007547 defect Effects 0.000 description 25
- 239000000463 material Substances 0.000 description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 17
- 239000011241 protective layer Substances 0.000 description 16
- 238000010521 absorption reaction Methods 0.000 description 12
- 239000000872 buffer Substances 0.000 description 8
- 150000002894 organic compounds Chemical class 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000012855 volatile organic compound Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000011941 photocatalyst Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Catalysts (AREA)
- Physical Vapour Deposition (AREA)
Description
また本発明は、非常に厳しい欠点の仕様が要求される極端紫外光反射型リソグラフィ用マスクブランクの成膜に用いて、30nm以上の大きさの欠点を防ぐことのできる極端紫外光反射型リソグラフィ用マスクブランク用ガラス基板を用いる薄膜デバイスの成膜方法を提供する。
2:光触媒特性を有する層
Claims (5)
- 成膜を行う面が光触媒特性を有する薄膜デバイス用ガラス基板に、成膜を行う前に、前記成膜を行う面に紫外光あるいは可視光を照射し、前記成膜を行う面にスパッタリング法またはCVD法を用いて成膜することを特徴とする、薄膜デバイスの成膜方法。
- 前記成膜を行う面が、光触媒特性を有する厚さ20〜3000nmのTiO2を含む層を有することを特徴とする、請求項1に記載の薄膜デバイスの成膜方法。
- 前記薄膜デバイス用ガラス基板は、極端紫外光反射型リソグラフィ用マスクブランク用基板として用いることを特徴とする、請求項1または2に記載の薄膜デバイスの成膜方法。
- 成膜を行う面が光触媒特性を有する、薄膜デバイス用ガラス基板である極端紫外光反射型リソグラフィ用マスクブランク用基板に、成膜を行う前に、前記成膜を行う面に紫外光あるいは可視光を照射し、成膜することを特徴とする、薄膜デバイスの成膜方法。
- 前記成膜を行う面が、光触媒特性を有する厚さ20〜3000nmのTiO 2 を含む層を有することを特徴とする、請求項4に記載の薄膜デバイスの成膜方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2006000638A JP4826742B2 (ja) | 2006-01-05 | 2006-01-05 | 薄膜デバイスの成膜方法 |
Applications Claiming Priority (1)
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JP2006000638A JP4826742B2 (ja) | 2006-01-05 | 2006-01-05 | 薄膜デバイスの成膜方法 |
Publications (2)
Publication Number | Publication Date |
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JP2007184361A JP2007184361A (ja) | 2007-07-19 |
JP4826742B2 true JP4826742B2 (ja) | 2011-11-30 |
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JP2006000638A Expired - Fee Related JP4826742B2 (ja) | 2006-01-05 | 2006-01-05 | 薄膜デバイスの成膜方法 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5292747B2 (ja) * | 2007-09-14 | 2013-09-18 | 凸版印刷株式会社 | 極端紫外線用反射型フォトマスク |
JP2009086094A (ja) * | 2007-09-28 | 2009-04-23 | Hoya Corp | マスクブランク及び転写用マスク |
JP5453855B2 (ja) * | 2009-03-11 | 2014-03-26 | 凸版印刷株式会社 | 反射型フォトマスクブランク及び反射型フォトマスク |
JP5221495B2 (ja) * | 2009-11-30 | 2013-06-26 | Hoya株式会社 | マスクブランクの製造方法 |
JP5772135B2 (ja) * | 2011-03-28 | 2015-09-02 | 凸版印刷株式会社 | 反射型マスクブランク及び反射型マスク |
CN103698971A (zh) * | 2012-09-27 | 2014-04-02 | 中芯国际集成电路制造(上海)有限公司 | 光罩及其制造方法 |
JP6738935B2 (ja) * | 2019-04-26 | 2020-08-12 | Hoya株式会社 | マスクブランクの製造方法、転写用マスクの製造方法、およびマスクブランク |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3027778B2 (ja) * | 1992-01-13 | 2000-04-04 | 東京エレクトロン株式会社 | 減圧装置昇圧用パージガス導入装置 |
FR2738813B1 (fr) * | 1995-09-15 | 1997-10-17 | Saint Gobain Vitrage | Substrat a revetement photo-catalytique |
JP2001186967A (ja) * | 1999-12-28 | 2001-07-10 | Nippon Sheet Glass Co Ltd | 冷凍・冷蔵庫用ガラスと該ガラスを使用したガラス物品 |
JP3463246B2 (ja) * | 2001-03-27 | 2003-11-05 | 独立行政法人物質・材料研究機構 | 光触媒効果を利用したリフトオフ法によるパターン形成方法 |
JP2003058077A (ja) * | 2001-08-08 | 2003-02-28 | Fuji Photo Film Co Ltd | ミクロファブリケーション用基板、その製造方法および像状薄膜形成方法 |
JP4202054B2 (ja) * | 2002-06-11 | 2008-12-24 | シャープ株式会社 | 薄膜パターンの形成方法 |
US7129010B2 (en) * | 2002-08-02 | 2006-10-31 | Schott Ag | Substrates for in particular microlithography |
JP2005076089A (ja) * | 2003-09-01 | 2005-03-24 | Matsushita Electric Ind Co Ltd | 成膜方法および成膜装置 |
JP3923462B2 (ja) * | 2003-10-02 | 2007-05-30 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
JP2005116851A (ja) * | 2003-10-09 | 2005-04-28 | Canon Inc | ロードロックチャンバー、露光装置、デバイスの製造方法 |
JP4879496B2 (ja) * | 2004-02-17 | 2012-02-22 | 株式会社半導体エネルギー研究所 | パターン形成方法 |
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