JP2011256108A5 - - Google Patents

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Publication number
JP2011256108A5
JP2011256108A5 JP2011156724A JP2011156724A JP2011256108A5 JP 2011256108 A5 JP2011256108 A5 JP 2011256108A5 JP 2011156724 A JP2011156724 A JP 2011156724A JP 2011156724 A JP2011156724 A JP 2011156724A JP 2011256108 A5 JP2011256108 A5 JP 2011256108A5
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field effect
effect transistor
oxide
based oxide
active layer
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JP2011156724A
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JP2011256108A (ja
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JP2011156724A 2004-11-10 2011-07-15 非晶質酸化物、及び電界効果型トランジスタ Pending JP2011256108A (ja)

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JP2011156724A JP2011256108A (ja) 2004-11-10 2011-07-15 非晶質酸化物、及び電界効果型トランジスタ

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JP2004326687 2004-11-10
JP2004326687 2004-11-10
JP2011156724A JP2011256108A (ja) 2004-11-10 2011-07-15 非晶質酸化物、及び電界効果型トランジスタ

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JP2005325366A Division JP5138163B2 (ja) 2004-11-10 2005-11-09 電界効果型トランジスタ

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JP2011256108A JP2011256108A (ja) 2011-12-22
JP2011256108A5 true JP2011256108A5 (enExample) 2012-12-27

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JP2011156723A Expired - Lifetime JP5337849B2 (ja) 2004-11-10 2011-07-15 非晶質酸化物、及び電界効果型トランジスタ
JP2011156724A Pending JP2011256108A (ja) 2004-11-10 2011-07-15 非晶質酸化物、及び電界効果型トランジスタ
JP2012148444A Expired - Lifetime JP5589030B2 (ja) 2004-11-10 2012-07-02 非晶質酸化物、及び電界効果型トランジスタ

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US (5) US7601984B2 (enExample)
EP (4) EP2453481B1 (enExample)
JP (3) JP5337849B2 (enExample)
KR (2) KR100939998B1 (enExample)
CN (3) CN102945857B (enExample)
AU (2) AU2005302962B2 (enExample)
BR (1) BRPI0517568B8 (enExample)
CA (3) CA2708335A1 (enExample)
RU (3) RU2399989C2 (enExample)
WO (1) WO2006051993A2 (enExample)

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