CN1934712A - 具有包括多成分金属氧化物的沟道的半导体器件 - Google Patents
具有包括多成分金属氧化物的沟道的半导体器件 Download PDFInfo
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- CN1934712A CN1934712A CNA2005800080005A CN200580008000A CN1934712A CN 1934712 A CN1934712 A CN 1934712A CN A2005800080005 A CNA2005800080005 A CN A2005800080005A CN 200580008000 A CN200580008000 A CN 200580008000A CN 1934712 A CN1934712 A CN 1934712A
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- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 21
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 20
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 42
- NCOPCFQNAZTAIV-UHFFFAOYSA-N cadmium indium Chemical compound [Cd].[In] NCOPCFQNAZTAIV-UHFFFAOYSA-N 0.000 claims abstract 2
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- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
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Abstract
一个示例性实施例包括半导体器件。该半导体器件可以包括具有一种或多种金属氧化物的沟道，所述金属氧化物包括锌镓、镉镓、镉铟。
Description
介绍
半导体器件使用于各种电子装置中。例如，薄膜晶体管技术可以用于液晶显示(LCD)屏。一些类型的薄膜晶体管由于低的载流子迁移率而具有相对低的切换速度。在一些应用中，例如在LCD屏的应用中，使用具有相对低切换速度的薄膜晶体管使得很难准确地运动。
附图简述
图1A-1F示出了诸如薄膜晶体管这样的半导体器件的各个实施例。
图2示出了薄膜晶体管的一个实施例的剖面示图。
图3示出了制造薄膜晶体管的一个实施例的方法实施例。
图4示出了有源矩阵显示区的实施例。
详述
本发明公开的示例性实施例包括诸如晶体管这样的包含多成分氧化物半导体的半导体器件。此外，本公开的示例性实施例说明包含多成分氧化物半导体的晶体管所具有的性质，例如光学透明度和电学性能。示例性实施例包括半导体器件，该半导体器件具有多成分氧化物半导体结构，该结构包括至少一个12族的金属阳离子以及至少一个13族的金属阳离子以形成至少一种三种成分氧化物、四种成分氧化物和包括氧化锌镓、氧化镉镓以及氧化镉铟的两种成分氧化物。一些示例性实施例中，多成分氧化物半导体结构可以包括非晶形式、单相结晶状态或混合相结晶状态。这里，术语多成分氧化物和多成分氧化物材料意欲表示氧化物材料系统，这些氧化物材料系统可以包括选自元素周期表的12族(CAS的IIB族)和13族(CAS的IIIA族)的金属阳离子形成的两种成分、三种成分和四种成分氧化物材料。
除非特别指出，说明书和权利要求书中使用的表示组分数量、反应条件等的所有数字在所有实例中都理解成被术语“大约”修饰。因此，除非相反指明，下面的说明书和所附权利要求书中提出的数字参数是近似值，根据本公开所需要获得的性质，该近似值可以改变。丝毫不限制权利要求范围的等效原则的应用，应至少根据所述有效位的数目和通过应用普通舍入技术理解每个数字参数。
应当理解，各种半导体器件可以与本公开的各个实施例，即，包括薄膜晶体管的场效应晶体管、有源矩阵显示器、逻辑反相器和放大器相结合使用。图1A-1F示出了半导体器件，例如薄膜晶体管的各种实施例。该薄膜晶体管可以是任何类型，包括但不限制于水平、垂直、共面电极、交错电极、顶栅、底栅、单栅以及双栅等类型。
这里，共面电极结构意欲表示一种晶体管结构，其中源电极和漏电极与栅电极位于沟道相同的一侧。交错电极结构意欲表示一种晶体管结构，其中源电极和漏电极与栅电极位于沟道的相反侧。
图1A和1B示出了底栅晶体管的实施例，图1C和1D示出了顶栅晶体管的实施例，且图1E和1F示出了双栅晶体管的实施例。图1A-1D每幅图中，晶体管包括衬底102、栅电极104、栅电介质106、沟道108、源电极110以及漏电极112。图1A到1D每幅图中，栅电介质106位于栅电极104与源电极和漏电极110、112之间，所以栅电介质106将栅电极104与源和漏电极110、112物理上分离。此外，图1A到1D每幅图中，源和漏电极110、112分离放置，由此形成源和漏电极110、112之间的一个区域，用于插入沟道108。这样，图1A到1D每幅图中，栅电介质106与沟道108相邻，并使得栅电极104与源和漏电极110、112物理上分离。此外，图1A到1D每幅图中，沟道108与栅电介质106相邻放置并插在源和漏电极110、112之间。
各个实施例中，例如图1E和1F中所示的双栅实施例中，阐述了两个栅电极104-1、104-2和两个栅电介质106-1、106-2。这种实施例中，栅电介质106-1、106-2相对于沟道108以及源和漏电极110、112的定位，以及栅电极104-1、104-2相对于栅电介质106-1、106-2的定位遵循上述相同的定位关系惯例，上述定位关系中示出了一个栅电介质和一个栅电极。即，栅电介质106-1、106-2位于栅电极104-1、104-2与源和漏电极110、112之间，使得栅电介质106-1、106-2将栅电极104-1、104-2与源和漏电极110、112物理上分离。
图1A-1F每幅图中，源和漏电极110、112之间插入的沟道108提供源和漏电极110、112之间的可控电学路径，使得当对栅电极104施加电压时，电荷可以通过沟道108在源和漏电极110、112之间流动。栅电极104处施加的电压可以改变沟道108传导电荷的能力，这样，通过在栅电极104处应用电压，可以至少部分地控制沟道108的电学性质。
图2中示出了诸如薄膜晶体管这样的半导体器件实施例的更为详细的描述。图2示出了示例性底栅薄膜晶体管200的剖面图。应当理解，图2中描述的薄膜晶体管的不同层、它们组成的材料以及它们形成的方法，同样可以应用于这里描述的任何晶体管实施例，包括结合图1A-1F描述的这些晶体管。而且，各个实施例中，薄膜晶体管200可以包含在包括有源矩阵显示屏装置、逻辑反相器和放大器的大量装置中。薄膜晶体管200还可以包括在红外装置中，该红外装置中还使用透明部件。
如图2所示，薄膜晶体管200可以包括衬底202、与衬底202相邻放置的栅电极204、与栅电极204相邻放置的栅电介质206以及位于栅电介质206、源电极210和漏电极212之间的沟道208。图2所示的实施例中，衬底202包括玻璃。然而，衬底202可以包括用于执行各个实施例的任何合适的衬底材料或组分。
图2中所示的衬底202包括ITO(即氧化铟锡)覆盖涂层以形成栅电极204层。然而，任何数目的材料可以用于栅电极204。这种材料可以包括诸如n型掺杂的In2O3、SnO2或ZnO这样的透明材料等等。其它适用的材料包括诸如In、Sn、Ga、Zn、Al、Ti、Ag、Cu这样的金属等。图2所示的实施例中，栅电极204的厚度大约200nm。栅电极层的厚度可以根据使用的材料、器件类型和其它因素改变。
图2所示的栅电介质206也可以具有覆盖涂层。尽管图2中示出的栅电极204和栅电介质206是有覆盖涂覆、未图形化的层，但它们可以被图形化。各个实施例中，栅电介质层206可以包括具有代表栅电介质绝缘性质的不同材料的各个层。这些材料可以包括五氧化二钽(Ta2O5)、钛酸锶(ST)、锶钛酸钡(BST)、锆钛酸铅(PZT)、铋钛酸锶(SBT)和锆钛酸铋(BZT)、二氧化硅(SiO2)、氮化硅(Si3N4)、氧化镁(MgO)、氧化铝(Al2O3)、氧化铪(IV)(HfO2)、氧化锆(IV)(ZrO2)、各种有机电介质材料等。
各个实施例中，栅电介质206可以通过使用Ta(OC2H5)5和O2，在大约430摄氏度通过低压CVD工艺沉积，并可以接着退火以减小漏电流特性。引入栅电介质层的其它方法可以包括这里将要详细描述的各种CVD和溅射技术以及原子层沉积、蒸发等。
各个实施例中，源电极210和漏电极212分离地与栅电介质206相邻放置。图2所示的实施例中，源和漏电极210和212可以由与栅电极204相同的材料形成。图2中，源和漏电极210和212的厚度大约为200nm。然而，可以根据使用的材料组成、将使用材料的应用和其它因素改变该厚度。源和漏电极材料的选择可以根据使用它们的应用、器件、系统等而改变。整体器件性能可以根据源和漏材料而改变。例如，在需要基本透明薄膜晶体管的器件中，可以为所需要的效果选择源、漏和栅电极材料。
各个实施例中，沟道208可以由多成分氧化物材料形成，该多成分氧化物材料包括两种成分、三种成分和四种成分氧化物，这些两种成分、三种成分和四种成分氧化物包括元素周期表的12族和13族的金属阳离子。这里，多成分氧化物表示包括这里所公开的12族和13族的各种金属阳离子的两种、三种和四种成分氧化物。此外，包括二种、三种和四种成分氧化物的各个实施例中，每个成分相互不同。这样，两种成分氧化物可以包括两种不同的金属阳离子，且四种成分氧化物可以包括四种不同的金属阳离子。
各个实施例中，沟道可以描述为包括如这里所描述的化学式的一个或多个化合物。各个实施例中，化学式可以由一系列包括A、B、C、D(这里代表阳离子)和O(原子氧)的字母表征。化学式还可以由一系列字符的下标x表征，例如Ax。化学式中，除了O之外的字母表示选自预定族的金属阳离子，下标表示选自预定族的金属阳离子。例如，如果A代表金属阳离子Zn，且x代表数目2，则Ax可以包括Zn2，例如，两个Zn原子。
此外，字母O表示原子氧，如元素周期表中的符号O表征的一样。这样，根据从化学式得出的化合物的化学计量，化学式中的O的下标，即Ox，可以根据包括在给定化学式中的金属原子阳离子的数目改变。例如，化学式AxBxOx可以包括二元金属氧化物：具有化学计量结构Zn2Ga2O5的氧化锌镓，其中O5表示与ZnO和Ga2O3的这种组合有关的氧原子的数目。
这里描述的化学式中，至少一种选自12族和13族的金属阳离子包括在多成分氧化物材料中。例如，化学式AxBxCxOx可以包括各种三种成分氧化物，该各种三种成分氧化物由选自至少一个12族和至少一个13族的金属阳离子形成。这样，在具有两种、三种或四种成分的多成分氧化物中，包括选自每个12族和13族的至少一种金属阳离子。此外，在给定化学式中选出的金属阳离子是不重复的。即，化学式AxBxCxOx中，如果A选择为锌，则B或C都不包括锌。
各个实施例中，沟道208可以由多成分氧化物材料形成，该多成分氧化物材料包括一种三元金属氧化物，该三元金属氧化物包括：氧化锌镓、氧化镉镓和氧化镉铟。这些实施例中，金属氧化物可以包括金属(A)与金属(B)比率为(A∶B)的原子组成，其中A和B独立地选自大约0.05到大约0.95的值。这样，氧化锌镓可以包括相对浓度为0.05的锌和0.95的镓，或0.95的锌和0.05的镓的原子组成。即，根据本实施例的沟道可以包括各种两种成分氧化物，它们具有每个成分都落在大约0.05到大约0.95范围的原子组成。
各个实施例中，沟道208可以由多成分氧化物材料形成，该多成分氧化物材料包括化学式为AxBxCxOx中的一种或多种化合物。这些实施例中，每个A可以选自Zn、Cd的组，每个B可以选自Ga、In的组，每个C可以选自Zn、Cd、Ga、In的组，每个O可以是原子氧，每个x可以是独立的非零整数，且A、B和C各不相同。即，每个组成元素的“x”的值可以不同，且在化学式AxBxCxOx的实施例中，如果B是锌，则A或C将不包括锌。这些实施例中，根据化学式AxBxCxOx，可以形成四个三种成分氧化物。这四个三种成分氧化物可以包括：氧化锌镓铟、氧化镉镓铟、氧化锌镉镓和氧化锌镉铟。而且，这些实施例中，化学式为AxBxCxOx的一种或多种化合物可以包括比率为A∶B∶C的原子组成，其中A、B和C都处于大约0.025到大约0.95的范围。这样，氧化锌镓铟可以包括接近范围末端的约0.025的锌、0.025的镓和0.95的铟，或约0.95的锌、0.025的镓以及0.025的铟，或约0.025的锌、0.95的镓和0.025的铟的比率浓度，或锌/镓/铟的比率位于接近范围末端的比率之间。即，根据本实施例，沟道可以包括各种三种成分氧化物，具有每个成分的相对浓度都落在大约0.025到大约0.95范围的原子组成比。
各个实施例中，沟道208可以由多成分氧化物材料形成，该多成分氧化物材料包括化学式AxBxCxDxOx中的一种或多种化合物。本实施例中，每个A可以选自Zn、Cd的组，每个B可以选自Ga、In的组，每个C可以选自Zn、Cd、Ga、In的组，每个D可以选自Zn、Cd、Ga、In的组，每个O可以是原子氧，每个x可以是独立的非零整数。即每个组分元素的“x”的值可以各不相同。这样，本实施例中，可以形成一个四种成分氧化物，包括氧化锌镉镓铟。本实施例中，化学式为AxBxCxDxOx的一种或多种化合物可以包括比率为A∶B∶C∶D的原子组成，其中A、B、C和D都处于大约0.017到大约0.95的范围。这样，氧化锌镉镓铟可以包括接近范围末端的约0.017的锌、0.017的镉、0.017的镓和0.95的铟的原子组成，或锌/镉/镓/铟的比率在接近范围末端的比率之间。即，根据本实施例，沟道可以包括四种成分氧化物，该四种成分氧化物具有每个成分的相对浓度都落在大约0.017到大约0.95范围的原子组成比。
本领域技术人员应当理解，对于任意给定的两种、三种和四种成分氧化物的金属阳离子的原子组成比不局限于上述实施例中的比率。各个实施例中，可以形成具有各种原子组成比的每个两种、三种和四种成分氧化物。例如，三种成分氧化物可以包括比率为0.025的锌、0.485的镓和0.49的铟的原子组成。
各个实施例中，取决于组成、工艺条件和其它因素，多成分氧化物可以包括各种形态。所述各个形态可以包括非晶态和多晶态。多晶态可以包括单相结晶态或混合相结晶态。此外，各个实施例中，源电极、漏电极和栅电极可以包括基本透明的材料。通过使用基本透明的材料用作源电极、漏电极和栅电极，薄膜晶体管的区域可以对人眼可见的部分电磁波谱透明。在晶体管技术中，一般技术人员应当理解，通过允许更多的光透过显示器，诸如有源矩阵液晶显示器这样的具有与薄膜晶体管(TFT)(具有用于选择或寻址将被打开或关闭像素的基本透明材料)耦合的显示元件(像素)的装置，将提高显示特性。
参考图2，沟道208可以由多成分氧化物形成，沟道厚度约50nm，然而，各个实施例中，可以根据各种因素(包括沟道材料是非晶还是多晶，以及将包括沟道的器件)而改变沟道厚度。
本实施例中，沟道208与栅电介质206相邻并位于源和漏电极210、212之间。在栅电极204处施加的电压可以促进沟道208中的电子积聚或耗尽。此外，施加的电压可以提高从源电极210到沟道208的电子注入以及通过漏电极212从中提取电子。在本公开的实施例中，使用施加到栅电极204的电压，通过控制漏电极212和源电极210之间的电流，沟道208可以允许开/关操作。
各个实施例中，沟道208可以包括多成分氧化物材料，它具有至少一种选自12族的金属阳离子和至少一种选自13族的金属阳离子，其中，12族金属阳离子包括Zn和Cd，且13族金属阳离子包括Ga和In，从而形成至少一种三种成分氧化物、四种成分氧化物、和两种成分氧化物，该两种成分氧化物包括氧化锌镓、氧化镉镓、氧化镉铟。此外，各个实施例中，多成分氧化物材料中的每个组分各不相同。例如，当多成分氧化物包括三种金属阳离子，即三种成分氧化物时，三种成分氧化物中将不包括相同的两个阳离子，这样，如果三种成分氧化物中包括锌，它将不作为三种成分氧化物中的第二或第三组分。另一个实例中，如果锌是四种成分氧化物的一个组分，该四种成分氧化物的其它三种组分不包括锌。这些原子组成不考虑氧和其它元素的可选存在。它们仅代表用于薄膜晶体管沟道的多成分氧化物材料的阳离子的选择。
如所描述的，多成分氧化物可以提供非常令人满意的电学性能，特别是在沟道迁移率方面。本领域技术人员应当理解，迁移率是能够帮助确定薄膜晶体管性能的特征，因为最大操作频率、速度和驱动电流随沟道迁移率成正比地增加。此外，沟道可以在可见和近红外光谱都是透明的，允许整个薄膜晶体管对于电磁波谱的可见区域是光学透明的。
本公开实施例中所述的多成分氧化物的使用有利于集成电路结构中各种薄膜的应用。例如，这些应用包括晶体管，如这里讨论的，例如水平、垂直、共面电极、交错电极、顶栅、底栅、单栅、双栅等薄膜晶体管。各个实施例中，本公开的晶体管(例如，薄膜晶体管)可以作为开关或放大器提供，其中施加到晶体管栅电极的电压可以影响流经沟道的电子流。技术人员应当理解，晶体管可以以各种方式操作。例如，当晶体管用作开关时，晶体管可以操作在饱和区，且当晶体管用作放大器时，晶体管可以操作在线性区。此外，下面结合图4示出和描述了在集成电路中结合多成分氧化物沟道的晶体管以及结合集成电路的结构诸如可视显示板(例如，有源矩阵LCD显示器)的使用。在显示应用和其它应用中，通常希望使一个或多个剩余的薄膜晶体管层，例如源、漏和栅电极，至少制造成是部分透明的。
图2中，源电极210和漏电极212包括厚度约为200nm的ITO层。然而，各个实施例中，根据各种因素，包括材料种类、应用和其它因素，可以改变该厚度。各个实施例中，源和漏电极210、212可以包括透明导体，例如n型掺杂的宽带半导体。实例包括但不局限于n型掺杂的In2O3、SnO2、氧化铟锡(ITO)或ZnO等。源和漏电极210、212还可以包括诸如In、Sn、Ga、Zn、Al、Ti、Ag、Cu、Au、Pt、W或Ni这样的金属等。本公开的各个实施例中，所有电极204、210和212可以包括透明材料，使得晶体管的各个实施例可以基本透明。
可以使用各种技术形成这里所述的晶体管结构的各个层。例如，栅电介质206可以通过使用Ta(OC2H5)5和O2，在大约430摄氏度通过低压CVD工艺沉积，并可以接着退火以减小漏电流特性。可以采用薄膜沉积技术，例如蒸发(例如热蒸发、电子束蒸发)、物理气相沉积(PVD)(例如，直流反应溅射、RF磁控溅射、离子束溅射)、化学气相沉积(CVD)、原子层沉积(ALD)，脉冲激光沉积(PLD)、分子束外延(MBE)等。此外，为了沉积本公开实施例的各个晶体管层，可以采用备选方法。这些备选方法可以包括金属薄膜的阳极电镀(电化学氧化)、以及液体前驱物的沉积，例如包括热喷墨和压电式按需即喷印刷的喷墨印刷和旋涂。薄膜图形化可以采用结合腐蚀或剥离工艺的光刻，或可以使用备选技术例如遮蔽掩模。一层或多层(例如图2所示的沟道)的掺杂还可以通过引入氧空位和/或等价元素的替代物而完成。
本公开的实施例还包括形成金属的方法，该金属包含衬底或衬底组件的表面上的薄膜，衬底或衬底组件例如是在形成集成电路(特别是这里描述的薄膜晶体管)中使用的其上具有或没有层或结构的硅晶片。应当理解本公开的方法不限于在硅晶片上进行沉积；而是也可以使用其它类型的晶片(例如，砷化镓、玻璃等)。
而且，其它衬底也可以用于本公开的方法。例如这些衬底包括光纤、引线等。一般地，薄膜可以在衬底的最低表面上直接形成，或者，例如，它们可以在图形化晶片中的各个层(即表面)中的任意一个上形成。
图3示出了制造半导体器件的方法。本公开的各个实施例中，在形成半导体结构中，可以提供衬底或衬底组件。这里，术语“衬底”指底部衬底材料层，例如，玻璃晶片中玻璃材料的最底层。术语“衬底组件”指其上具有形成的一个或多个层或结构的衬底。衬底类型的实例包括但不局限于玻璃、塑料和金属，并包括如下这些物理形式，例如薄层、薄膜和覆盖层，并且可以不透明或基本透明。
在方框310，可以提供漏电极和源电极。例如，可以在衬底组件的衬底上提供漏电极和源电极。
各个实施例中，前驱物化合物描述为金属、金属氧化物、多成分氧化物和具有字母和下标的化学式。化学式中，字母，例如A，表示选自预定族的金属阳离子；下标，例如x，表示选择预定族的金属原子阳离子的数目。此外，这里使用的化合物可以包括两种或更多的元素，这些元素包括12族和13族的金属阳离子以及氧。这里描述的前驱物化合物不表示Ox的存在；然而，一般技术人员应当理解，前驱物化合物也可以包括氧以提供化合物的氧化物。换句话说，下面列出的许多前驱物化合物是作为多种成分金属提供的，即金属-金属化合物。下面描述的方法没有通过排除氧限制化合物的意思。一般技术人员应当理解，这里描述的各种沉积技术中，氧可以包括在前驱物化合物中。
这里描述的前驱物化合物的各种组合可以用在前驱物合成物中。这样，如这里使用的，“前驱物合成物”指包括这里描述的一种或多种前驱物化合物的固体或液体，可选地，可以混合不同于这里描述的一种或多种前驱物化合物。例如，可以在一个前驱物合成物或单独的合成物中提供锌前驱物化合物和镓前驱物化合物。当它们包括在单独的合成物中时，当沉积沟道时，包括这两种前驱物合成物。
方框320中，可以沉积与漏电极和源电极接触并包括多成分氧化物的沟道。例如，沟道可以沉积在漏电极和源电极之间，从而与这两个电极电学耦合。各个实施例中，沉积与漏电极和源电极接触的沟道可以包括提供至少一种包含一个或多个前驱物化合物的前驱物合成物，该前驱物化合物包括：可以提供氧化锌镓、氧化镉镓以及氧化镉铟。例如，锌前驱物化合物和镓前驱物化合物可以在一个前驱物合成物或单独的合成物中提供。这样，根据这些实施例，前驱物合成物可以包括二元金属氧化物，即氧化锌，和其它多成分金属氧化物，即氧化锌镓。然而，在前驱物合成物包括二元金属氧化物时，当沉积沟道时可以包括包含不同二元金属氧化物的其它前驱物合成物，由此形成包括多成分金属氧化物例如氧化锌镓的沟道。
此外，各个实施例中，前驱物合成物还可以包括一种或多种包含Ax的前驱物化合物、一种或多种包含Bx的前驱物化合物以及一种或多种包含Cx的前驱物化合物。这些实施例中，每个A可以选自Zn、Cd的组，每个B可以选自Ga、In组，每个C可以选自Zn、Cd、Ga、In的组，每个x可以是独立的非零整数，且A、B和C各不相同。即，每个组成元素的“x”的值可以不同。这样，这些实施例中，可以提供从A定义的组中选出的至少一种金属阳离子，从B定义的组中选出的至少一种金属阳离子以及从C定义的组中选出的至少一种金属阳离子以形成Ax、Bx和Cx的一个或多个化合物的一个或多个前驱物合成物。例如，根据这些实施例，前驱物合成物可以包括Ax、Bx和Cx的前驱物化合物。此外，根据这些实施例，前驱物化合物可以包括Ax和Cx的化合物。这种情况下，可以在沉积沟道时包括包含Bx的额外的前驱物合成物，由此形成包括四元金属氧化物，即三种成分氧化物的沟道。
在一个实施例中，前驱物合成物还可以包括一种或多种包含Dx的前驱物化合物。这些实施例中，每个A、B和C可以包括这里描述的那些材料，每个D可以选自Zn、Cd、Ge、In的组，每个x是独立的非零整数，且每个A、B、C和D互不相同。即，每个组成元素的“x”的值各不相同。这样，在该实施例中，前驱物合成物可以包括一种或多种包含Ax、Bx、Cx和Dx的化合物。这些实施例中，可以提供从A、B、C和D定义的组中选出的至少一种金属阳离子以形成一个或多个Ax、Bx、Cx和Dx化合物的一个或多个前驱物合成物。然而在该实施例中，沉积的沟道包括Ax、Bx、Cx和Dx的前驱物化合物，由此形成包括四种成分氧化物的沟道。
这里“液体”指溶液或纯液体(室温下的液体，或室温下可以随温度升高而熔化的固体)。这里，“溶液”不要求固体的完全可溶性；而是，溶液可以具有一些不溶解材料，然而更希望是具有相当数量的能被有机溶剂带到用于化学气相沉积工艺的气相的材料。这里描述的前驱物化合物还可以包括适用于化学气相沉积系统的一种或多种有机溶剂，以及其它添加物，例如，在所需要的前驱物化合物蒸发中起辅助作用的自由配体。
适于薄膜沉积技术的各种Zn、Cd、Ga和In的前驱物化合物可以用于本公开的实施例。前驱物化合物的实例包括但不局限于，金属和金属氧化物，包括ZnO、ZnO2、CdO、GaO、Ga2O、Ga2O3、InO和In2O3前驱物化合物。尽管这里示出了特定的前驱物化合物，可以使用各种前驱物化合物，只要它们可以用在沉积工艺即可。本公开的各个实施例中，Zn、Cd、Ge和In前驱物化合物可以包括中性前驱物化合物，并且在室温下可以是液体或固体。如果前驱物化合物是固体，则它们在有机溶剂中充分可溶以允许蒸发，它们可以从固态蒸发或升华或烧蚀(例如，通过激光烧蚀或溅射)，或它们具有低于它们分解温度的熔化温度。这样，这里描述的很多前驱物化合物适用于气相沉积技术，例如化学气相沉积(CVD)技术(例如，闪蒸技术、气泡技术和/或微滴技术)。
这里描述的前驱物化合物可以用于喷墨沉积、溅射和气相沉积技术(例如，化学气相沉积(CVD)或原子层沉积(ALD))的前驱物合成物中。备选地，这里描述的某些前驱物化合物可以用在其它沉积技术(例如旋涂覆盖等)的前驱物合成物中。一般地，包含具有少量碳原子(例如每个R基具有1-4个碳原子)的有机R基的前驱物化合物适用于使用气相沉积技术。包含具有较大量碳原子(例如每个R基具有5-12个碳原子)的有机R基的那些前驱物化合物一般适用于旋涂或浸渍涂敷。
这里，术语“有机R基”表示烃基(具有不同于碳和氢的可选元素，例如氧、氮、硫和硅)，该烃基分类成脂族基、环状基(cyclicgroup)或脂肪和环状基的组合(例如烷芳和芳烷基)。本公开说明的上下文中，有机基是不干扰包含金属薄膜形成的那些基团。它们可以属于这样的种类和尺寸，即对于使用化学气相沉积技术形成包含金属的薄膜不产生干扰。术语“脂族基”表示饱和或不饱和线性或分岔的烃基。例如该术语用于包含烷基、烯基和炔基。术语“烷基”表示饱和线性或分岔的烃基，例如，包括甲基、乙基、异丙基、叔丁基、庚基、十二烷基、十八烷基、戊基、2-乙基己基等。术语“烯基”表示不饱和的、线性或分岔的具有一个或更多碳-碳双键的烃基，例如乙烯基。术语“炔基”表示不饱和的、线性或分岔的具有一个或更多碳-碳三键的烃基。术语“环状基”表示闭环烃基，该闭环烃基分类为脂环基、芳香基或杂环基。术语“脂环基”表示具有集合这些脂肪族基性质的环状烃基。术语“芳香基”或“芳基”表示单或多核芳香烃基。术语“杂环基”表示闭环烃基，其中环中的一个或多个原子是不同于碳的元素(例如，氮、氧、硫等)。
仍然参考图3，可以沉积包括前驱物合成物的沟道，以从这些前驱物合成物形成多成分氧化物，从而与漏电极和源电极电学耦合。各个实施例中，沟道可以采用各种物理气相沉积技术，例如直流反应溅射、RF溅射、磁控溅射和离子束溅射。沉积沟道的其它方法可以包括当前驱物合成物包括液体形式时，使用喷墨沉积技术。
各个实施例中，包含在沟道中的多成分氧化物在它的整个厚度上具有均匀的成分，尽管这不是必须的。例如，在四种成分氧化物中，首先可以沉积包含具有Ax的前驱物化合物的前驱物合成物，然后可以沉积包括Bx、Cx和Dx的前驱物化合物的组合物，从而形成四种成分氧化物。应当理解，多成分氧化物沟道的厚度将取决于它的应用。例如，该厚度的范围可以为大约1纳米到大约1000纳米。备选实施例中，厚度的范围可以为大约10纳米到大约200纳米。
本公开的实施例中，多成分氧化物可以包括至少一种12族金属阳离子和至少一种13族金属阳离子的化合物，其中12族阳离子包括Zn和Cd阳离子，且13族阳离子包括Ga和In阳离子，从而形成三种成分氧化物、四种成分氧化物、和两种成分氧化物的至少其中之一，该两种成分氧化物包括氧化锌镓、氧化镉镓、氧化镉铟。12族和13族金属阳离子的前驱物化合物一般是单核的(即，每个分子包含一种金属的单体)，尽管也可使用弱结合的二聚物(即包含通过氢或配价键微弱键合在一起的两个单体的二聚物)。本公开的其它实施例中，用于形成多成分氧化物的前驱物化合物可以包括适于气相沉积的有机金属化合物，这些有机金属化合物的实例包括但不局限于乙酰丙酮锌[Zn(C5H7O2)2]和乙酰丙酮铟[In(C5H7O2)3]。
如这里讨论的，在本公开的实施例中，用于溅射工艺中形成多成分氧化物的前驱物化合物可以包括两种、三种和四种成分氧化物。例如，两种成分氧化物可以用作靶以形成沟道。使用上述靶，通过溅射可以在薄膜中沉积两种成分氧化物，并获得用于沟道的单相结晶态。例如，单相结晶态可以包括12族化合物和13族化合物，其中12族包括金属阳离子Zn的氧化物，例如ZnO，13族包括金属阳离子Ga的氧化物，例如Ga2O3，遵循下面化学式：
ZnxGa2yOx+2y
本实施例中，可以发现x和y的值在给定范围。例如，发现x和y可以分别独立地位于大约1到大约15的范围，大约2到大约10的范围，大于1的整数值以及小于15的整数值。x和y值的特定实例包括它们分别为2和1，其中氧化锌镓的单相结晶态包括Zn2Ga2O5。
备选地，氧化锌镓的实施例可以呈现混合相结晶态，这源自于使用上述靶的溅射。例如，混合相结晶态可以包括但不局限于两个或更多的相，例如包括ZnO、Zn2Ga2O5和Ga2O3，相-相比率范围为A∶B∶C(例如ZnO∶Zn2Ga2O5∶Ga2O3)，其中A、B和C都处于大约0.01到大约0.99的范围。
此外，12族和13族阳离子的化合物在非晶态中呈现极好的电子输运。这样，可以获得希望的性能水平而不需要多成分氧化物的结晶。这样，各个实施例中，氧化锌镓可以具有基本非晶的形式。例如，氧化锌镓可以包括锌(x)∶镓(1-x)的原子组成，其中x的范围为大约0.01到大约0.99。这种原子组成不考虑氧和其它元素的可选存在。它仅代表锌和镓的相对比率。另一个实施例中，x的范围可以为大约0.1到大约0.9和大约0.05到大约0.95。
本领域技术人员应当理解，在通过溅射和其它沉积技术，使用三种和四种成分氧化物形成沟道的实施例中，每个前驱物化合物的原子组成可以包括大约0.01到大约0.99的范围。此外，其它范围可以包括大约0.1到大约0.9的范围，以及大约0.05到大约0.095的范围。
此外，因为每个这些多成分氧化物材料是基于12族和13族阳离子的组合，因此有望在结构和电学性质以及工艺考虑方面具有相当程度的定性上的相似性。而且，氧化锌铟，这里公开的两种成分氧化物的组成显示出了极好的电子输运，这样，认为包括三种和四种成分氧化物的其它两种成分氧化物组合在定性上具有相似性能。在于----日提交的名为“SEMICONDUCTOR DEVICE”的序列号为No.----的未决美国专利申请中，可以发现氧化锌铟的电子输运特性的实例。
可以在惰性气体和/或反应气体氛围执行溅射或化学气相沉积工艺，以形成相对纯的多成分氧化物沟道。惰性气体一般选自包括氮、氦、氩及其混合物的组。本公开的上下文中，惰性气体通常不与这里描述的前驱物化合物反应且不干扰多成分氧化物沟道的形成。
反应气体可以选自与这里描述的前驱物化合物在沉积条件下至少在表面反应的各种气体。反应气体的实例包括氢气和诸如O2这样的氧化气体。载气和/或反应气体的各种组合可以用于本公开的实施例以形成多成分氧化物沟道。
例如，用于多成分氧化物沟道的溅射工艺中，可以通过使用氩气和氧气的混合物作为溅射气体，在特定流速条件下应用RF功率执行该工艺，以获得溅射沉积腔中所需的沉积。然而，很明显，根据本公开，包括形成多成分氧化物沟道的任何方式，因此对于多成分氧化物沟道形成来讲，并不局限于任意特定工艺例如溅射。
方框330中，在形成本公开的薄膜晶体管的实施例中，可以提供栅电极和位于栅电极与沟道之间的栅电介质。
这里描述的实施例可以用于制造芯片、集成电路、单片装置、半导体装置以及微电子装置，例如显示装置。例如，图4示出了诸如有源矩阵液晶显示器(AMLCD)480这样的显示装置的实施例。图4中，AMLCD 480可以包括显示区460矩阵中的像素器件(即，液晶元件)440。矩阵中的像素器件440可以与同样位于显示区460中的薄膜晶体管400相耦合。薄膜晶体管400可以包括这里公开的薄膜晶体管的实施例。此外，AMLCD 480可以包括正交的控制线462和464，用于供给寻址信号电压到薄膜晶体管400，以影响薄膜晶体管导通和截止，并控制例如像素器件440，以提供AMLCD 480上的图像。
尽管这里阐述和描述了特定示例性实施例，但本领域技术人员应当理解，为获得相同技术而计算的布置可以代替所示的特定示例性实施例。本公开意欲覆盖本公开实施例的修改或变化。应当理解上述描述是以阐述方式而非限制方式进行。
对于本领域技术人员，回顾上述描述，上述示例性实施例和其它这里没有特别描述的实施例的组合是显而易见的。本发明的各个实施例的范围包括使用上述结构和方法的其它应用。因此，本发明各个实施例的范围应由所附权利要求以及这些权利要求的等效表述的全部范围确定。
上述详述中，为简化本公开说明，各种特征组合到单个示例性实施例中。本公开的所述方法不应理解成反映这样的意图：本发明的实施例必须具有每个权利要求明确表明的更多特征。而是，如下面权利要求反映的，发明的主题内容较少地依赖于单个公开示例性实施例的所有特征。这样，下面的权利要求由此与说明书相结合，每个权利要求保持其本身是一个独立的实施例。
Claims (9)
1.一种半导体器件100/200/400，包括：
漏电极112/212；
源电极110/210；
与漏电极112/212和源电极110/210接触的沟道108/208，其中沟道108/208包括一种或多种金属氧化物，该金属氧化物包括锌镓、镉镓、镉铟；
栅电极104/204；和
位于栅电极104/204和沟道108/208之间的栅电介质106/206。
2.权利要求1的半导体器件100/200/400，其中金属氧化物包括氧化锌镓、氧化镉镓、氧化镉铟中的一种或多种。
3.权利要求1和2的半导体器件100/200/400，其中金属氧化物包括金属(A)与金属(B)的比率为(A∶B)的原子组成，其中A和B都在大约0.05到大约0.95的范围内。
4.权利要求1的半导体器件100/200/400，其中沟道108/208包括化学式为AxBxCxOx的一种或多种化合物，其中每个A选自组Zn、Cd，每个B选自组Ga、In，每个C选自组Zn、Cd、Ga、In，每个O是原子氧，每个x是独立的非零整数，且其中A、B和C各不相同。
5.权利要求4的半导体器件100/200/400，其中化学式为AxBxCxOx的一种或多种化合物包括比率为A∶B∶C的原子组成，其中A、B和C都处于大约0.025到大约0.95的范围。
6.权利要求5的半导体器件100/200/400，其中化学式为AxBxCxOx的一种或多种化合物包括Dx，以形成化学式为AxBxCxDxOx的化合物，其中D选自组Zn、Cd、Ga、In，每个O是原子氧，每个x是独立的非零整数，且其中每个A、B、C和D各不相同。
7.权利要求6的半导体器件100/200/400，其中化学式为AxBxCxDxOx的一种或多种化合物包括比率为A∶B∶C∶D的原子组成，其中每个A、B、C和D都处于大约0.017到大约0.95的范围。
8.权利要求1的半导体器件100/200/400，其中金属氧化物包括包含氧化锌镉镓铟的一种或多种。
9.权利要求8的半导体器件100/200/400，其中金属氧化物包括比率为A∶B∶C∶D的原子组成，其中每个A、B、C和D都处于大约0.017到大约0.95的范围。
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Also Published As
| Publication number | Publication date |
|---|---|
| KR101118390B1 (ko) | 2012-03-09 |
| US7732251B2 (en) | 2010-06-08 |
| US20080254569A1 (en) | 2008-10-16 |
| US20120208318A1 (en) | 2012-08-16 |
| US20100219411A1 (en) | 2010-09-02 |
| KR20060132720A (ko) | 2006-12-21 |
| TW200534369A (en) | 2005-10-16 |
| EP1733434A1 (en) | 2006-12-20 |
| TWI355679B (en) | 2012-01-01 |
| US20050199960A1 (en) | 2005-09-15 |
| WO2005093850A1 (en) | 2005-10-06 |
| CN100539192C (zh) | 2009-09-09 |
| US8647031B2 (en) | 2014-02-11 |
| JP2007529119A (ja) | 2007-10-18 |
| US7297977B2 (en) | 2007-11-20 |
| US8203144B2 (en) | 2012-06-19 |
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