TWI610078B - 氣體檢測模組及其氣體感測器 - Google Patents

氣體檢測模組及其氣體感測器 Download PDF

Info

Publication number
TWI610078B
TWI610078B TW105137327A TW105137327A TWI610078B TW I610078 B TWI610078 B TW I610078B TW 105137327 A TW105137327 A TW 105137327A TW 105137327 A TW105137327 A TW 105137327A TW I610078 B TWI610078 B TW I610078B
Authority
TW
Taiwan
Prior art keywords
active layer
gas
detection module
gas detection
sensor
Prior art date
Application number
TW105137327A
Other languages
English (en)
Other versions
TW201819903A (zh
Inventor
張鼎張
陳華茂
姜孝承
曹俞慶
陳敏甄
Original Assignee
國立中山大學
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 國立中山大學 filed Critical 國立中山大學
Priority to TW105137327A priority Critical patent/TWI610078B/zh
Priority to US15/471,760 priority patent/US10274471B2/en
Application granted granted Critical
Publication of TWI610078B publication Critical patent/TWI610078B/zh
Publication of TW201819903A publication Critical patent/TW201819903A/zh

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004Gaseous mixtures, e.g. polluted air
    • G01N33/0009General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0027General constructional details of gas analysers, e.g. portable test equipment concerning the detector
    • G01N33/0036General constructional details of gas analysers, e.g. portable test equipment concerning the detector specially adapted to detect a particular component
    • G01N33/0047Organic compounds
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/483Physical analysis of biological material
    • G01N33/497Physical analysis of biological material of gaseous biological material, e.g. breath
    • G01N33/4972Determining alcohol content
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Medicinal Chemistry (AREA)
  • Food Science & Technology (AREA)
  • Biomedical Technology (AREA)
  • Combustion & Propulsion (AREA)
  • Biophysics (AREA)
  • Hematology (AREA)
  • Urology & Nephrology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

本發明主要揭示一種氣體檢測模組,用於解決酒精氣體感測不便問題,該氣體檢測模組包含:一氣體感測器,設有一基板、一閘極、一絕緣層、一主動層、一源極及一汲極,該基板上依序疊設該閘極、絕緣層及主動層,該源極、汲極由該主動層局部延伸至該絕緣層上,該源極與該汲極之間的主動層裸露;及一檢出電路電連接該氣體感測器之源極。藉此,可確實解決上述問題。

Description

氣體檢測模組及其氣體感測器
本發明係關於一種氣體檢測模組;特別是關於一種感測酒精氣體的氣體檢測模組。
氣體感測器在日常生活中應用頻繁,舉凡有害氣體(如一氧化碳等)與危安氣體(如酒精氣體等)之偵測,均需特定感測器進行氣體檢測。以酒精氣體感測為例,可輔助警察測量駕駛人的酒精濃度,如:吹氣或驗血等,用於取締酒後駕車的行為人,以利遏止酒駕車禍導致人員傷亡等情事。
習知酒精濃度測量裝置可利用酒精燃料電池轉用而成,含有高分子膜及一濃度檢測部,該高分子膜係具有質子傳導性,在該高分子膜含浸酒精液體時,可配合該液體中之酒精濃度而改變質子傳導度;該濃度檢測部可根據前述高分子膜之質子傳導度之變化而檢測前述液體中之酒精濃度,其一實施例可參酌中華民國公告第I256169號「酒精濃度測量方法、酒精濃度測量裝置、以及含有該裝置之燃料電池系統」專利案。
惟,習知酒精濃度測量裝置只能檢測液體中的酒精濃度,雖然液體中的酒精可能會以氣體型態散佈,檢測時可利用相關換算方式取得酒精氣體濃度,但須等待液體中的酒精逐漸逸散至密閉空間中,無法直接且快速地檢測酒精氣體,不太適合用於吹氣檢測酒精濃度需求。況且,該酒精濃度係依該液體中的質子傳導度而改變,但提供該質子傳導性的高分 子膜經長期反應後,可能會影響濃度檢測的準確性。
有鑑於此,上述先前技術在實際使用時確有不便之處,亟需進一步改良,以提升其實用性。
本發明係提供一種氣體檢測模組,可直接且快速地感測氣體濃度。
本發明係提供一種氣體感測器,可直接且快速地感測氣體。
本發明揭示一種氣體感測器,可包含:一基板、一閘極、一絕緣層、一主動層、一源極及一汲極,該閘極覆設於該基板上,該絕緣層覆設於該閘極及該基板上,該主動層覆設於該絕緣層上,該源極、該汲極分別由該主動層局部延伸至該絕緣層上,該源極與該汲極之間的主動層裸露,其中該主動層係由銦鎵鋅氧化物構成,該銦鎵鋅氧化物之銦:鎵:鋅:氧的含量比例為1:1:1:4。
本發明另揭示一種氣體檢測模組,可包含:一氣體感測器,設有一基板、一閘極、一絕緣層、一主動層、一源極及一汲極,該閘極覆設於該基板上,該絕緣層覆設於該閘極及該基板上,該主動層覆設於該絕緣層上,該源極、該汲極分別由該主動層局部延伸至該絕緣層上,該源極與該汲極之間的主動層裸露;及一檢出電路,設有一運算放大器、一電阻器及一電訊感測器,該運算放大器具有二輸入端及一輸出端,該二輸入端中的一個電連接一接地端,該二輸入端中的另一個電連接該氣體感測器之源極,並經由該電阻器電連接該輸出端,該輸出端與該接地端之間電連接該電訊感測器。
所述源極可輸出一感應電流,該感應電流經由該電阻器轉成一感應電壓,供該電訊感測器進行量測;若該感應電流大於一基準電流超過一門檻值,該電訊感測器輸出一指示訊息。藉此,可經由該檢出電路可 解讀出該感測訊號之強弱,作為感測該待測氣體濃度之依據,經由不同氣體量測時產生的感測訊號強度差異,可避免量測誤判之情事。
上揭氣體檢測模組及其氣體感測器,可利用該氣體感測器之氣體感測區域感應周圍的待測氣體,待感測到該待測氣體後輸出上述感測訊號,經由該檢出電路可解讀出該感測訊號之強弱,作為感測該待測氣體濃度之依據,經由不同氣體量測時產生的感測訊號強度差異,可避免量測誤判之情事。因此,本發明氣體檢測模組可以達成「容易檢測氣體濃度」及「避免量測時解讀錯誤」等功效,可滿足於日常生活中的氣體量測需求,提高民眾生活品質。
1‧‧‧氣體感測器
11‧‧‧基板
12‧‧‧閘極
13‧‧‧絕緣層
14‧‧‧主動層
15‧‧‧源極
16‧‧‧汲極
1a‧‧‧氣體感測區域
2‧‧‧檢出電路
21‧‧‧運算放大器
211,212‧‧‧輸入端
213‧‧‧輸出端
22‧‧‧電阻器
23‧‧‧電訊感測器
R‧‧‧接地端
VDATA‧‧‧感應電壓
VDD‧‧‧直流電源
VG‧‧‧閘極電壓
S0‧‧‧初始狀態
S1‧‧‧首次通入酒精
S2‧‧‧首次通入氧氣
S1’‧‧‧再次通入酒精
S2’‧‧‧再次通入氧氣
S1”‧‧‧三次通入酒精
第1圖:係本發明氣體檢測模組實施例之電路示意圖。
第2圖:係本發明實施例之氣體感測器的組合剖視圖。
第3圖:係本發明實施例感測酒精氣體與氧氣時的電壓-電流特性曲線圖。
第4圖:係本發明實施例感測酒精氣體與氧氣時的感測電流大小示意圖。
為讓本發明之上述及其他目的、特徵及優點能更明顯易懂,下文特舉本發明之較佳實施例,並配合所附圖式,作詳細說明如下:
本發明全文所述之方向性用語,例如「前」、「後」、「左」、「右」、「上(頂)」、「下(底)」、「內」、「外」、「側」等,主要係參考附加圖式的方向,各方向性用語僅用以輔助說明及理解本發明的各實施例,非用以限制本發明。
請參閱第1及2圖所示,其中,該氣體檢測模組實施例包含 一氣體感測器1及一檢出電路2,該氣體感測器1表面具有一氣體感測區域1a,該檢出電路2電連接該氣體感測器1,用以輔助該氣體感測器於感測到特定的待測氣體後輸出一感測訊號。在此實施例中,該氣體感測器1可為薄膜電晶體,如:背通道蝕刻薄膜電晶體等,舉例說明如下,惟不以此為限。
舉例而言,如第2圖所示,以背通道蝕刻薄膜電晶體為例,該氣體感測器1可設有一基板(substrate)11、一閘極(gate)12、一絕緣層(insulation layer)13、一主動層(active layer)14、一源極(source)15及一汲極(drain)16。該基板11可為習知薄膜電晶體之基板(如:玻璃基板等),用以設置其他材料層;該閘極12可覆設於該基板11上,該閘極12可沉積鈦(Ti)/鋁(A1)/鈦而成;該絕緣層13可覆設於該閘極12及該基板11上,該絕緣層13可由絕緣材(如:二氧化矽或氮化矽等)沉積而成;該主動層14可覆設於該絕緣層13上,該主動層14可由能隙範圍介於1.5至4.5電子伏特之材料或組成物沉積而成,如:該主動層的材料為至少一元素之氧化物(Oxide),該至少一元素係選自由鉿(Hf)、錫(Sn)、鋅(Zn)、鎵(Ga)、鎢(W)、銦(In)、矽(Si)及鋁(Al)組成之群組,其中氧離子與非氧離子的濃度比例可為1:1,在此例中,該主動層14可由銦鎵鋅氧化物(InGaZnO)構成,其中銦:鎵:鋅:氧的含量比例可為1:1:1:4;該源極15、汲極16可分別由該主動層14局部延伸至該絕緣層13上,如:該源極15、汲極16可由鈦/鋁/鈦沉積後再蝕刻形成,使該源極15與汲極16之間的主動層14可裸露形成該氣體感測區域1a,惟不以此為限。
此外,請再參閱第1圖所示,該檢出電路2可設有一運算放大器21、一電阻器22及一電訊感測器23,該運算放大器21具有二輸入端211、212(如:正、負輸入端)及一輸出端213,該二輸入端211、212中 的一個(如:負輸入端)可電連接一接地端R,該二輸入端211、212中的另一個(如:正輸入端)可電連接該氣體感測器1之源極15,並經由該電阻器22電連接該輸出端213,該輸出端213與該接地端R之間可電連接該電訊感測器23。在此例中,該電訊感測器(如:電壓感測器等)可用以感測由該源極16輸出之一感應電流,該感應電流可經由該電阻器22轉成一感應電壓,供該電訊感測器23進行量測,其中,若該感應電流大於一基準電流超過一門檻值(如:十倍至數十倍不等),則該電訊感測器23可輸出一指示訊息,如:利用習知顯示器輸出燈號、色塊、文字、圖形或聲音等,以便符合各種實用上的氣體檢測需求,惟不以此為限。
請再參閱第1圖所示,本發明氣體檢測模組實施例使用時,該氣體感測器1之汲極16可外接一直流電源VDD,用以提供該氣體感測器1工作時所需的用電,使該氣體感測器1可運作於工作曲線(operation curve)之飽和區(Saturation region);另,由於該運算放大器21之輸入電阻甚大,該運算放大器21之輸入端211、212可視為等電位,若該運算放大器21之輸入端211、212分別電連接該接地端R及該氣體感測器1之源極15,則該源極15可視為接地。
因此,如第1圖所示,該氣體感測器1之主動層14上的氣體感測區域1a可作為一資訊輸入端,用以感應輸入一感應電壓VDATA,當該主動層14上裸露的氣體感測區域1a接觸不同氣體時,可於該主動層14產生不同化學反應而形成不同感應電壓VDATA,使該源極15與汲極16之間形成不同程度的感應電荷,令該汲極16輸出不同大小的感應電流,該感應電流可作為後續判斷氣體濃度之依據,且該感應電流可適當轉為感應電壓,以便適用於不同應用需求。在此例中,僅以對該主動層14之氣體感測區域1a反覆通入酒精氣體(C2H5OH)、氧氣(O2)作為測試態樣,用以說明該感應電流之變化,惟不以此為限。
請參閱第3及4圖所示,其係本發明氣體檢測模組實施例感測氧氣與酒精時的電壓-電流特性曲線圖及感測電流大小示意圖。其中,量測過程之感應電流係依序標示為:〝初始狀態(S0)〞→〝首次通入酒精(S1)〞→〝首次通入氧氣(S2)〞→〝再次通入酒精(S1’)〞→〝再次通入氧氣(S2’)〞→〝三次通入酒精(S1”)〞。
如第3圖所示,其中,首次通入酒精氣體時,該主動層14(如第2圖所示)之起始電壓VG會往負方向偏移(如圖中之VG=-5V),但首次通入氧氣則會使得起始電壓VG回復,再次通入酒精氣體仍會使起始電壓VG往負方向偏移,再次通入氧氣則會使得起始電壓VG回復,三次通入酒精氣體仍會使起始電壓VG往負方向偏移。藉此,本發明氣體檢測模組可對周圍之酒精氣體產生起始電壓VG改變之特性,該起始電壓VG改變的幅度可進一步換算為酒精氣體濃度,是以,本發明氣體檢測模組確實可用於感測出待測氣體之濃度。
如第4圖所示,其中,當該主動層14(如第2圖所示)之閘極電壓操作於負5伏特(如第3圖之VG=-5V)時,反覆通入酒精氣體、氧氣(O2),觀察有無通入酒精氣體之電流大小差異高達1*104~5。藉此,當用於酒精氣體量測時,確實可與其他氣體的量測結果產生區別性,因而,本發明氣體檢測模組確實可有效感測出待測氣體,可以避免量測時誤判之情事。因此,本發明氣體檢測模組具有高敏感度氣體感測能力,該氣體檢測模組所需的製程機台與現有的製程機台相同,可直接應用於光電產業,增加顯示器之附加價值。
藉此,本發明氣體檢測模組上述實施例可利用該氣體感測器之氣體感測區域感應周圍的待測氣體,待感測到該待測氣體後輸出上述感測訊號,經由該檢出電路可解讀出該感測訊號之強弱,作為感測該待測氣體濃度之依據,經由不同氣體量測時產生的感測訊號強度差異,可避免量 測誤判之情事。因此,本發明氣體檢測模組可以達成「容易檢測氣體濃度」及「避免量測時解讀錯誤」等功效,可滿足於日常生活中的氣體量測需求,提高民眾生活品質。
雖然本發明已利用上述較佳實施例揭示,然其並非用以限定本發明,任何熟習此技藝者在不脫離本發明之精神和範圍之內,相對上述實施例進行各種更動與修改仍屬本發明所保護之技術範疇,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
1‧‧‧氣體感測器
2‧‧‧檢出電路
21‧‧‧運算放大器
211,212‧‧‧輸入端
213‧‧‧輸出端
22‧‧‧電阻器
23‧‧‧電訊感測器
R‧‧‧接地端
VDATA‧‧‧感應電壓
VDD‧‧‧直流電源

Claims (10)

  1. 一種氣體檢測模組,包含:一氣體感測器,設有一基板、一閘極、一絕緣層、一主動層、一源極及一汲極,該閘極覆設於該基板上,該絕緣層覆設於該閘極及該基板上,該主動層覆設於該絕緣層上,該源極、該汲極分別由該主動層局部延伸至該絕緣層上,該源極與該汲極之間的主動層裸露;及一檢出電路,設有一運算放大器、一電阻器及一電訊感測器,該運算放大器具有二輸入端及一輸出端,該二輸入端中的一個電連接一接地端,該二輸入端中的另一個電連接該氣體感測器之源極,並經由該電阻器電連接該輸出端,該輸出端與該接地端之間電連接該電訊感測器。
  2. 根據申請專利範圍第1項所述之氣體檢測模組,其中該主動層的材料為至少一元素之氧化物,該至少一元素係選自由鉿、錫、鋅、鎵、鎢、銦、矽及鋁組成之群組。
  3. 根據申請專利範圍第2項所述之氣體檢測模組,其中該主動層之氧離子與非氧離子的濃度比例為1:1。
  4. 根據申請專利範圍第2項所述之氣體檢測模組,其中該主動層係由銦鎵鋅氧化物構成。
  5. 根據申請專利範圍第4項所述之氣體檢測模組,其中該銦鎵鋅氧化物之銦:鎵:鋅:氧的含量比例為1:1:1:4。
  6. 根據申請專利範圍第1項所述之氣體檢測模組,其中該主動層之能隙範圍介於1.5至4.5電子伏特。
  7. 根據申請專利範圍第1項所述之氣體檢測模組,其中該氣體感測器為一背通道蝕刻薄膜電晶體。
  8. 根據申請專利範圍第1項所述之氣體檢測模組,其中該源極輸出一感應電流,該感應電流經由該電阻器轉成一感應電壓,供該電訊感測器進行 量測。
  9. 根據申請專利範圍第8項所述之氣體檢測模組,其中若該感應電流大於一基準電流超過一門檻值,該電訊感測器輸出一指示訊息。
  10. 一種氣體感測器,包含:一基板、一閘極、一絕緣層、一主動層、一源極及一汲極,該閘極覆設於該基板上,該絕緣層覆設於該閘極及該基板上,該主動層覆設於該絕緣層上,該源極、該汲極分別由該主動層局部延伸至該絕緣層上,該源極與該汲極之間的主動層裸露,其中該主動層係由銦鎵鋅氧化物構成,該銦鎵鋅氧化物之銦:鎵:鋅:氧的含量比例為1:1:1:4。
TW105137327A 2016-11-15 2016-11-15 氣體檢測模組及其氣體感測器 TWI610078B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW105137327A TWI610078B (zh) 2016-11-15 2016-11-15 氣體檢測模組及其氣體感測器
US15/471,760 US10274471B2 (en) 2016-11-15 2017-03-28 Gas detection module and gas sensor thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW105137327A TWI610078B (zh) 2016-11-15 2016-11-15 氣體檢測模組及其氣體感測器

Publications (2)

Publication Number Publication Date
TWI610078B true TWI610078B (zh) 2018-01-01
TW201819903A TW201819903A (zh) 2018-06-01

Family

ID=61728262

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105137327A TWI610078B (zh) 2016-11-15 2016-11-15 氣體檢測模組及其氣體感測器

Country Status (2)

Country Link
US (1) US10274471B2 (zh)
TW (1) TWI610078B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112924512A (zh) * 2021-01-15 2021-06-08 合肥工业大学 一种基于层状碳纳米片的酒精水凝胶传感设备及其方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201010077A (en) * 2008-08-20 2010-03-01 Univ Nat Formosa Gas sensor made of field effect transistor based on ZnO nanowires
TW201237411A (en) * 2011-03-04 2012-09-16 Univ Nat Chiao Tung Biochemical matter sensor and manufacturing method thereof
CN102290445B (zh) * 2011-05-20 2015-08-26 刘文超 晶体管组件及其制造方法
WO2016047340A1 (ja) * 2014-09-24 2016-03-31 富士フイルム株式会社 ガスセンサ、有機トランジスタ

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5466194A (en) * 1977-11-04 1979-05-28 Kuraray Co Fet sensor
US5324683A (en) * 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
GB2321336B (en) * 1997-01-15 2001-07-25 Univ Warwick Gas-sensing semiconductor devices
US5944970A (en) * 1997-04-29 1999-08-31 Honeywell Inc. Solid state electrochemical sensors
US7323634B2 (en) * 1998-10-14 2008-01-29 Patterning Technologies Limited Method of forming an electronic device
US8152991B2 (en) * 2005-10-27 2012-04-10 Nanomix, Inc. Ammonia nanosensors, and environmental control system
US8154093B2 (en) * 2002-01-16 2012-04-10 Nanomix, Inc. Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices
WO2004114450A1 (ja) 2003-06-24 2004-12-29 Nec Corporation アルコール濃度測定方法、アルコール濃度測定装置、および当該装置を含む燃料電池システム
US7145174B2 (en) * 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7242039B2 (en) * 2004-03-12 2007-07-10 Hewlett-Packard Development Company, L.P. Semiconductor device
US7250627B2 (en) * 2004-03-12 2007-07-31 Hewlett-Packard Development Company, L.P. Semiconductor device
US7297977B2 (en) * 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7642573B2 (en) * 2004-03-12 2010-01-05 Hewlett-Packard Development Company, L.P. Semiconductor device
WO2006025481A1 (ja) * 2004-09-03 2006-03-09 Japan Science And Technology Agency センサユニット及び反応場セルユニット並びに分析装置
US9287356B2 (en) * 2005-05-09 2016-03-15 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9196615B2 (en) * 2005-05-09 2015-11-24 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8217490B2 (en) * 2005-05-09 2012-07-10 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9911743B2 (en) * 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8013363B2 (en) * 2005-05-09 2011-09-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7868354B2 (en) * 2006-11-08 2011-01-11 Duke University GaN-based nitric oxide sensors and methods of making and using the same
JP5288142B2 (ja) * 2008-06-06 2013-09-11 出光興産株式会社 酸化物薄膜用スパッタリングターゲットおよびその製造法
US8415166B2 (en) * 2008-07-21 2013-04-09 Yeda Research And Development Co. Ltd. Semiconductor detector for peroxide-based explosives
JP4296356B1 (ja) * 2008-09-12 2009-07-15 国立大学法人 岡山大学 ガスセンサ
WO2011055605A1 (ja) * 2009-11-06 2011-05-12 株式会社日立製作所 ガスセンサ
US8809861B2 (en) * 2010-12-29 2014-08-19 Stmicroelectronics Pte Ltd. Thin film metal-dielectric-metal transistor
TWI565067B (zh) * 2011-07-08 2017-01-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP2013168926A (ja) * 2012-01-18 2013-08-29 Semiconductor Energy Lab Co Ltd 回路、センサ回路及びセンサ回路を用いた半導体装置
WO2013119719A1 (en) * 2012-02-06 2013-08-15 Ludwig, Lester, F. Microprocessor-controlled microfluidic platform for pathogen, toxin, biomarker, and chemical detection with removable updatable sensor array for food and water safety, medical, and laboratory apllications
WO2014065389A1 (en) * 2012-10-25 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Central control system
US10840239B2 (en) * 2014-08-26 2020-11-17 Monolithic 3D Inc. 3D semiconductor device and structure
WO2015049841A1 (ja) * 2013-10-04 2015-04-09 旭化成株式会社 太陽電池及びその製造方法、半導体素子及びその製造方法
JP2016111677A (ja) * 2014-09-26 2016-06-20 株式会社半導体エネルギー研究所 半導体装置、無線センサ、及び電子機器
CN107709979B (zh) * 2015-06-30 2020-07-07 富士通株式会社 气体传感器及其使用方法
US10768153B2 (en) * 2015-08-02 2020-09-08 Todos Technologies Ltd. Gas sensing device having distributed gas sensing elements and a method for sensing gas

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201010077A (en) * 2008-08-20 2010-03-01 Univ Nat Formosa Gas sensor made of field effect transistor based on ZnO nanowires
TW201237411A (en) * 2011-03-04 2012-09-16 Univ Nat Chiao Tung Biochemical matter sensor and manufacturing method thereof
CN102290445B (zh) * 2011-05-20 2015-08-26 刘文超 晶体管组件及其制造方法
WO2016047340A1 (ja) * 2014-09-24 2016-03-31 富士フイルム株式会社 ガスセンサ、有機トランジスタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112924512A (zh) * 2021-01-15 2021-06-08 合肥工业大学 一种基于层状碳纳米片的酒精水凝胶传感设备及其方法

Also Published As

Publication number Publication date
US20180136154A1 (en) 2018-05-17
US10274471B2 (en) 2019-04-30
TW201819903A (zh) 2018-06-01

Similar Documents

Publication Publication Date Title
US8466521B2 (en) Hydrogen ion-sensitive field effect transistor and manufacturing method thereof
US20150097214A1 (en) Structures, apparatuses and methods for fabricating sensors in multi-layer structures
US8926812B2 (en) Cell-based transparent sensor capable of real-time optical observation of cell behavior, method for manufacturing the same and multi-detection sensor chip using the same
JPH05249064A (ja) ガスセンサ
CN108847424B (zh) 薄膜晶体管、传感器、生物检测装置和方法
JP2009236907A (ja) ガスの濃度を測定する方法
Nguyen et al. Organic field-effect transistor with extended indium tin oxide gate structure for selective pH sensing
JP2008039523A (ja) pH検出装置
KR20210012454A (ko) 트리플 게이트 구조의 이온전계효과 트랜지스터 기반 고성능 바이오 센서
WO2012138054A9 (ko) 습도 센서, 습도 센싱 방법 및 이를 위한 트랜지스터
US8795511B2 (en) Configuration, a sensing element with such configuration, electrochemical sensor comprising such sensing element and method for electrochemical sensing using such electrochemical sensor
TWI610078B (zh) 氣體檢測模組及其氣體感測器
JP5903872B2 (ja) トランジスタ型センサ、およびトランジスタ型センサの製造方法
JP5968372B2 (ja) 磁場センサー
EP2833129B1 (en) Method and apparatus for analyzing a gas by a conductance-type particulate metal-oxide gas sensor
Jeon et al. Triple gate polycrystalline-silicon-based ion-sensitive field-effect transistor for high-performance aqueous chemical application
Alifragis et al. Potassium selective chemically modified field effect transistors based on AlGaN/GaN two-dimensional electron gas heterostructures
Fernandes et al. Effect of back-gate biasing on floating electrolytes in silicon-on-insulator-based nanoribbon sensors
Yang et al. Improved sensitivity and stability for SnO ion-sensitive field-effect transistor-based ph sensor by electrical double layer gate and AlO sensitive film
JPH0797095B2 (ja) 一酸化炭素ガスセンサ
CN212341087U (zh) 微纳传感装置
CN112505108B (zh) 气体检测系统和方法
KR101729685B1 (ko) 이온 농도 검출 방법 및 장치
JP5246868B2 (ja) 揮発性有機物検出センサ
CN110146802A (zh) 量测待测电路中晶体管迁移率比例方法及设备

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees