JP7130209B2 - 酸化物半導体化合物の層、酸化物半導体化合物の層を備える半導体素子、および積層体 - Google Patents
酸化物半導体化合物の層、酸化物半導体化合物の層を備える半導体素子、および積層体 Download PDFInfo
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- JP7130209B2 JP7130209B2 JP2018503092A JP2018503092A JP7130209B2 JP 7130209 B2 JP7130209 B2 JP 7130209B2 JP 2018503092 A JP2018503092 A JP 2018503092A JP 2018503092 A JP2018503092 A JP 2018503092A JP 7130209 B2 JP7130209 B2 JP 7130209B2
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Description
N=N0exp(-Ea/kT) (1)式
N0は、1016cm-3以上であってもよい。ただし、Tは測定温度(K)であり、kはボルツマン定数(eVK-1)であり、Eaは活性化エネルギー(eV)である。
前記半導体素子は、TFT(薄膜トランジスタ)、太陽電池、またはOLED(有機発光ダイオード)のいずれかであり、
前記層は、前述のような特徴を有する酸化物半導体化合物で構成されることを特徴とする半導体素子が提供される。
前記半導体素子は、TFT(薄膜トランジスタ)であり、
前記層は、ガリウムおよび酸素を含み、光学バンドギャップが3.4eV以上であり、電界効果移動度が5cm2/Vs以上であることを特徴とする半導体素子が提供される。
基板と、
該基板の上部に設置された酸化物半導体化合物の層と、
を有し、
前記層は、前述のような特徴を有する酸化物半導体化合物で構成されることを特徴とする積層体が提供される。
本発明の一実施形態では、ガリウムおよび酸素を含み、光学バンドギャップが3.4eV以上であり、300Kにおけるホール(Hall)測定により得られる電子のホール(Hall)移動度が3cm2/Vs以上である、酸化物半導体化合物(以下、「第1の化合物」という)が提供される。
(αhν)1/2 ∝ (hν-Eg) (2)式
ここで、αは吸収係数であり、hはプランク定数であり、νは光の振動数であり、Egは光学バンドギャップである。
N=N0×exp(-Ea/kT) (1)式
ここで、kは、ボルツマン定数(eVK-1)であり、Tは温度(K)であり、N0は定数であり、Eaは活性化エネルギー(eV)である。
次に、第1の化合物の組成の一例について説明する。
L=Kλ/(βcosθ) (3)式
となる。例えば、X線波長λが0.154nmのとき、シェラー定数Kは0.9となる。
前述のような特徴を有する第1の化合物は、薄膜トランジスタ(TFT)、太陽電池、および有機発光ダイオード(OLED)など、各種半導体素子に適用することができる。以下、図面を参照して、そのような半導体素子の一例について、具体的に説明する。
図1には、本発明の一実施形態による薄膜トランジスタ(以下、「第1の素子」と称する)の断面を模式的に示す。
Id=α×μCox×1/2(Vgs-Vth)2 (4)式
ここで、Idはドレイン電流、μは電界効果移動度、Coxはゲート電極170と酸化物半導体層130で形成される単位面積当たりの静電容量、Vgsはゲート電極170とソース電極との間の電圧、Vthは閾値電圧を表す。αは、例えば酸化物半導体層130に電流が流れる長さをL、幅をWとしたとき、W/Lと表せる。
次に、図3~図8を参照して、図1に示したような第1の素子100の製造方法について説明する。
次に、図9を参照して、本発明の一実施形態による太陽電池の構成について説明する。
次に、図10を参照して、本発明の一実施形態による有機発光ダイオード(OLED)の構成について説明する。
(第1の膜の評価)
以下の方法で、カチオンとしてGaおよびZnを含む酸化物半導体化合物を成膜し、その特性を評価した。
吸収係数α=-1/d×ln(T/(100-R)) (5)式
ここで、dは、第1の石英ガラス基板サンプルに含まれる第1の膜の厚さである。また、石英ガラス基板の吸収係数は無視できるほど小さい。
(αhν)1/2 ∝ (hν-Eg) (6)式
ここで、hはプランク定数であり、νは光の振動数であり、Egは光学バンドギャップである。
次に、以下の方法により、TFT素子(以下、「第1のTFTサンプル」という)を作製した。
前述のように作製された第1のTFTサンプル400を用いて、負電圧印加光照射環境下での特性評価を行った。
(第2の膜の評価)
例1の場合と同様の方法で、カチオンとしてGaおよびZnを含む酸化物半導体化合物を成膜し、その特性を評価した。
次に、前述の例1の場合と同様の方法で、TFT素子(以下、「第2のTFTサンプル」という)を作製した。ただし、この例2では、酸化物半導体層として、第2の膜を使用した。この膜の成膜方法は、前述の(第2の膜の評価)における記載の通りである。
第2のTFTサンプルを用いて、例1の場合と同様の、負電圧印加光照射環境下での特性評価を行った。
(第3の膜の評価)
以下の方法で、カチオンとしてGaおよびZnを含む酸化物半導体化合物を成膜し、その特性を評価した。成膜方法としては、スパッタ法を用い、ターゲットはモル比で、Ga2O3:ZnO=50:50となる酸化物ターゲットを豊島製作所から購入した。
次に、前述の例1の場合と同様の方法で、TFT素子(以下、「第3のTFTサンプル」という)を作製した。
第3のTFTサンプルを用いて、例1の場合と同様の、負電圧印加光照射環境下での特性評価を行った。
(第4の膜の評価)
以下の方法で、カチオンとしてIn、GaおよびZnを含む酸化物半導体化合物を成膜し、その特性を評価した。
次に、前述の例3の場合と同様の方法で、TFT素子(以下、「第4のTFTサンプル」という)を作製した。
第4のTFTサンプルを用いて、例1の場合と同様の、負電圧印加光照射環境下での特性評価を行った。
110 基板
120 バリア膜
130 酸化物半導体層
132 突出部分
138 絶縁膜
140 ゲート絶縁膜
150 層間絶縁膜
160 第1の電極
162 第2の電極
168 導電膜
170 ゲート電極
180 パッシベーション膜
200 太陽電池(第2の素子)
210 支持体
220 シリコン層
230 酸化物半導体層
240 電極層
300 OLED(第3の素子)
310 基板
320 第1の電極(陰極)
330 酸化物半導体層
340 有機層
350 第2の電極(陽極)
400 第1のTFTサンプル
410 シリコン基板
420 熱酸化膜
430 酸化物半導体層
440 ドレイン電極
450 ソース電極
Claims (16)
- ガリウムおよび酸素を含み、光学バンドギャップが3.4eV以上であり、300Kにおけるホール(Hall)測定により得られる電子のホール(Hall)移動度が3cm2/Vs以上であり、
非晶質であり、
以下のシェラーの式;
L=Kλ/(βcosθ)
ここで、Kはシェラー定数、λはX線波長、βは半値幅、θはピーク位置である;
で求められる結晶子径Lが6.0nm以下である、酸化物半導体化合物の層。 - 前記ホール(Hall)測定により得られる電子密度Nの温度依存性を、以下の式で表したとき、
N=N0exp(-Ea/kT) (1)式
N0が1016cm-3以上である、請求項1に記載の酸化物半導体化合物の層:
ここで、Tは測定温度(K)であり、kはボルツマン定数(eVK-1)であり、Eaは活性化エネルギー(eV)である。 - 前記活性化エネルギーEaは0.04eV以上である、請求項2に記載の酸化物半導体化合物の層。
- 入射光エネルギー3.5eVの吸収係数が10000cm-1以下である請求項1乃至3のいずれか一つに記載の酸化物半導体化合物の層。
- さらに、亜鉛を含む、請求項1乃至4のいずれか一つに記載の酸化物半導体化合物の層。
- 全カチオン原子に対するガリウム原子の原子比は、35%以上である、請求項1乃至5のいずれか一つに記載の酸化物半導体化合物の層。
- 実質的に、ガリウムと亜鉛との酸化物からなる、請求項1乃至6のいずれか一つに記載の酸化物半導体化合物の層。
- ガリウム原子と亜鉛原子の全量に対するガリウム原子の原子比は、35%~95%の範囲である、請求項7に記載の酸化物半導体化合物の層。
- 酸化物半導体化合物の層を含む半導体素子であって、
前記半導体素子は、TFT(薄膜トランジスタ)、太陽電池、またはOLED(有機発光ダイオード)のいずれかであり、
前記層は、請求項1乃至8のいずれか一つに記載の酸化物半導体化合物の層で構成されることを特徴とする半導体素子。 - 前記半導体素子は、TFTであり、
前記層は、5cm2/Vs以上の電界効果移動度を有する、請求項9に記載の半導体素子。 - 酸化物半導体化合物の層を含む半導体素子であって、
前記半導体素子は、TFT(薄膜トランジスタ)であり、
前記層は、ガリウムおよび酸素を含み、光学バンドギャップが3.4eV以上であり、電界効果移動度が5cm2/Vs以上であり、
前記層は、非晶質であり、
前記層は、以下のシェラーの式;
L=Kλ/(βcosθ)
ここで、Kはシェラー定数、λはX線波長、βは半値幅、θはピーク位置である;
で求められる結晶子径Lが6.0nm以下である、半導体素子。 - 前記半導体素子は、基板と、該基板の上部に配置された前記層と、該層の上部に配置されたゲート電極と、前記層と接触するソース電極およびドレイン電極とを有し、
前記層は、前記基板の側において、遮光層で遮蔽されていない、請求項9乃至11のいずれか一つに記載の半導体素子。 - 前記半導体素子は、基板と、該基板の上部に配置されたゲート電極と、該ゲート電極の上部に配置された前記層と、該層と接触するソース電極およびドレイン電極とを有し、
前記層は、前記基板および前記ゲート電極とは反対の側において、遮光層で遮蔽されていない、請求項9乃至11のいずれか一つに記載の半導体素子。 - 積層体であって、
基板と、
該基板の上部に設置された酸化物半導体化合物の層と、
を有し、
前記層は、請求項1乃至8のいずれか一つに記載の酸化物半導体化合物の層で構成されることを特徴とする積層体。 - さらに、前記基板と前記層との間に、バリア膜を有する、請求項14に記載の積層体。
- 前記基板は、ガラス基板である、請求項14または15に記載の積層体。
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US20140021464A1 (en) * | 2012-07-17 | 2014-01-23 | National Chung Cheng University | Yttrium-doped Indium Oxide Transparent Conductive Thin-Film Transistor and Method for Making Same |
TW201427027A (zh) * | 2012-12-26 | 2014-07-01 | Hon Hai Prec Ind Co Ltd | 薄膜電晶體 |
JP2015109315A (ja) * | 2013-12-03 | 2015-06-11 | 出光興産株式会社 | 薄膜トランジスタ、その製造方法、酸化物半導体層、表示装置及び半導体装置 |
JP2018032839A (ja) * | 2015-12-11 | 2018-03-01 | 株式会社半導体エネルギー研究所 | トランジスタ、回路、半導体装置、表示装置および電子機器 |
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2017
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- 2017-02-23 JP JP2018503092A patent/JP7130209B2/ja active Active
- 2017-02-23 KR KR1020187024762A patent/KR20180121892A/ko unknown
- 2017-03-01 TW TW106106613A patent/TWI732828B/zh active
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Patent Citations (4)
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JP2002279695A (ja) | 2000-02-10 | 2002-09-27 | Tdk Corp | 光情報媒体 |
JP2012235104A (ja) | 2011-04-22 | 2012-11-29 | Kobe Steel Ltd | 薄膜トランジスタ構造、ならびにその構造を備えた薄膜トランジスタおよび表示装置 |
JP2014199913A (ja) | 2012-12-28 | 2014-10-23 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
WO2015098458A1 (ja) | 2013-12-26 | 2015-07-02 | 国立大学法人東京工業大学 | 金属酸化物の薄膜、該薄膜を備えた有機エレクトロルミネッセンス素子、太陽電池、および有機太陽電池 |
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US20180374959A1 (en) | 2018-12-27 |
CN109075205A (zh) | 2018-12-21 |
WO2017150351A1 (ja) | 2017-09-08 |
KR20180121892A (ko) | 2018-11-09 |
US11075303B2 (en) | 2021-07-27 |
TW201732885A (zh) | 2017-09-16 |
JPWO2017150351A1 (ja) | 2019-01-10 |
EP3425678A4 (en) | 2019-10-09 |
TWI732828B (zh) | 2021-07-11 |
EP3425678A1 (en) | 2019-01-09 |
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