JP5872912B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP5872912B2 JP5872912B2 JP2012006721A JP2012006721A JP5872912B2 JP 5872912 B2 JP5872912 B2 JP 5872912B2 JP 2012006721 A JP2012006721 A JP 2012006721A JP 2012006721 A JP2012006721 A JP 2012006721A JP 5872912 B2 JP5872912 B2 JP 5872912B2
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- light
- electrode
- photoelectric conversion
- emitting element
- layer
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- 230000002093 peripheral effect Effects 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
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- G09G3/344—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices based on particles moving in a fluid or in a gas, e.g. electrophoretic devices
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- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
- G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
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- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
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- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
本実施の形態においては、本発明の一態様である発光装置の構成について、図1(A)乃至図1(C)を用いて説明する。
図1(A)乃至図1(C)は、発光装置の画素の一部分に相当する断面図、または平面図である。本実施の形態においては、図1(A)乃至図1(C)に示した画素の一部分も発光装置とすることを付記する。
絶縁表面を有する基板である第1の基板101上に、導電層を形成した後、第1のフォトリソグラフィ工程を行い、レジストマスクを形成し、エッチングにより不要な部分を除去してゲート電極102を形成する(図2(A)参照)。図2(A)に示すように、ゲート電極102の端部にテーパー形状が形成されるようにエッチングすると、積層する膜の被覆性が向上するため好ましい。
まず、第2の基板151上に第3の電極152aを形成する(図3(A)参照)。
p型半導体として、ポリフルオレン(略称:PFO、構造式(A−1)参照)を使用し、n型半導体として、N,N’−ジヘキシルペリレン−3,4,9,10−テトラカルボン酸ジイミド(略称:HexPTC、構造式(A−2)参照)を使用することができる。PFO(略称)とHexPTC(略称)をトルエン、クロロホルム、ジクロロエタン、クロロベンゼン等の溶媒に溶かして塗布することでp型半導体とn型半導体の混合物からなるR(赤色)の有色層を形成することができる。
p型半導体として、フェノキシ基で置換されたバナジウムフタロシアニン(略称:Pho−VoPc、構造式(A−3)参照)を使用し、n型半導体として、[6、6]−Phenyl−C61−Butyric acid Methyl ester(フェニルC61酪酸メチルエステル)(略称:PCBM、構造式(A−4)参照)を使用することができる。Pho−VoPc(略称)とPCBM(略称)をトルエン、クロロホルム、ジクロロエタン、クロロベンゼン等の溶媒に溶かして塗布することでp型半導体とn型半導体の混合物からなるG(緑色)の有色層を形成することができる。
p型半導体として、青色顔料として一般的な銅フタロシアニン(略称:CuPc)に、溶媒に溶けるように、置換基(本実施の形態においてはt−Bu)を導入したCuPc誘電体(構造式(A−5)参照)を使用することができる。また、n型半導体として、PCBM(略称)(構造式(A−4)参照)を使用した。CuPc誘電体とPCBM(略称)をトルエン、クロロホルム、ジクロロエタン、クロロベンゼン等の溶媒に溶かして塗布することでp型半導体とn型半導体の混合物からなるB(青色)の有色層を形成することができる。
本実施の形態においては、先の実施の形態1と異なった光電変換素子と遮光膜が形成された第2の基板151の作製方法について、図4(A)乃至図4(E)を用いて説明を行う。
本実施の形態においては、先の実施の形態1に示した発光装置と異なる構成について、図5(A)、及び図5(B)を用いて説明を行う。
本実施の形態においては、本発明の一態様である発光装置について、図6を用いて説明を行う。
本実施の形態においては、実施の形態1で示した第1の電極114、EL層118、及び第2の電極119からなる発光素子120の詳細について、図7(A)、及び図7(B)を用いて説明を行う。
図7(A)に示す発光素子120は、一対の電極(第1の電極114、第2の電極119)間に発光領域を含むEL層118が挟まれた構造を有する。なお、以下の本実施の形態の説明においては、例として、第1の電極114を陽極として用い、第2の電極119を陰極として用いるものとする。
本実施の形態では、本発明の一態様である発光装置について、図8を用いて説明する。図8(A)は、第1の基板上に形成された発光素子駆動用トランジスタ及び発光素子と、第2の基板上に形成された遮光膜、及び光電変換素子と、をシール材によって封止したパネルの平面図であり、図8(B)は、図8(A)のB1−B2における断面図に相当する。また、図8(C)は、図8(A)のC1−C2における断面図に相当する。
本実施の形態では、本発明の一態様である発光装置を用いた照明装置の構成について、図9を用いて説明する。図9(A)は、第1の基板上に形成されたEL層を含む発光素子と、第2の基板に形成された光電変換素子と、を充填材によって封止された発光装置の断面図であり、図9(B)は発光装置の斜視図を示す。なお、図9(A)は、図9(B)のD1−D2線における断面図に相当する。
本実施の形態では、表示装置として、液晶パネル、及び電子ペーパーについて図12(A)、及び図12(B)を用いてそれぞれ説明する。
本実施の形態では、上記実施の形態に示した表示装置、及び発光装置を含む電子機器について図10を用いて説明する。
本実施の形態では、実施の形態7に示す発光装置の一形態である照明装置について図11(A)及び図11(B)を用いて説明する。
102 ゲート電極
104 ゲート絶縁層
106 半導体層
108 ドレイン電極
110 絶縁層
112 絶縁層
114 電極
116 隔壁
118 EL層
118a 電荷発生層
119 電極
120 発光素子
130 トランジスタ
151 基板
152 光電変換素子
152a 電極
152b バッファ層
152c 有色層
152d バッファ層
152e 電極
153 遮光膜
153a 電極
153b p型半導体層
153c i型半導体層
153d n型半導体層
153e 電極
155 絶縁層
156 サイドウォール層
160 空間
280 充填材
290 筐体
300 基板
310 絶縁層
312 隔壁
314 電極
316 EL層
318 電極
320 発光素子
322 空間
330 駆動用トランジスタ
340 接続端子
350 基板
352 光電変換素子
352a 電極
352b バッファ層
352c 有色層
352d バッファ層
352e 電極
400 基板
410 絶縁層
412 隔壁
414 電極
416 EL層
418 電極
420 発光素子
422 空間
430 駆動用トランジスタ
440 接続端子
450 基板
452 光電変換素子
452a 電極
452b バッファ層
452c 有色層
452d バッファ層
452e 電極
500 基板
502 トランジスタ
504 絶縁層
506 絶縁層
508 電極
510 配向膜
550 基板
552 遮光膜
554 光電変換素子
554a 電極
554b バッファ層
554c 有色層
554d バッファ層
554e 電極
556 液晶層
558 スペーサ
560 絶縁層
562 対向電極
564 配向膜
589 球形粒子
590 電極
590a 黒色領域
590b 白色領域
594 キャビティ
595 充填材
1000 発光装置
1001 筐体
1002 コンバータ
1003 コンバータ
1004 筐体
1005 照明部
1006 照明部
1010 光電変換素子
1020 発光素子
1030 電力制御回路
1040 蓄電池
1050 発光制御回路
4501 基板
4502 画素部
4503a 信号線駆動回路
4503b 信号線駆動回路
4504a 走査線駆動回路
4504b 走査線駆動回路
4505 シール材
4506 基板
4507 充填材
4509 トランジスタ
4510 トランジスタ
4511 発光素子
4512 EL層
4513 電極
4514 電極
4515a 電極
4515b 電極
4516 端子電極
4516a 電極
4516b 電極
4517 接続端子電極
4517a 電極
4517b 電極
4518 FPC
4519 異方性導電膜
4520 隔壁
4521 光電変換素子
4521a 電極
4521b 電極
4522 遮光膜
4523 接続端子部
4523a 接続端子部
4523b 接続端子部
4530a 導電層
4530b 導電層
9101 筐体
9102 支持台
9103 表示部
9104 スピーカー部
9105 ビデオ入力端子
9201 本体
9202 筐体
9203 表示部
9204 キーボード
9205 外部接続ポート
9206 ポインティングデバイス
9401 本体
9402 筐体
9403 表示部
9404 音声入力部
9405 音声出力部
9406 操作キー
9407 外部接続ポート
9408 アンテナ
9501 本体
9502 表示部
9503 筐体
9504 外部接続ポート
9505 リモコン受信部
9506 受像部
9507 バッテリー
9508 音声入力部
9509 操作キー
9510 接眼部
Claims (7)
- 一対の基板間に挟持された光電変換素子と発光素子とトランジスタと、を有し、
前記発光素子は、前記トランジスタと電気的に接続され、
前記トランジスタは、前記一対の基板の一方上に位置し、
前記発光素子は、前記トランジスタ上に位置し、
前記光電変換素子は、前記発光素子上に位置し、
隣り合う前記発光素子同士の間には隔壁があり、
隣り合う前記光電変換素子同士の間には遮光膜があり、
前記光電変換素子は、前記発光素子と対向して設けられ、且つ前記発光素子と重なり、
前記隔壁は、前記遮光膜と対向して設けられ、且つ前記遮光膜と重なり、
前記光電変換素子は、前記発光素子からの放射光のうち特定波長帯域の光に対して透過性を示す有色層を有し、
前記発光素子からの放射光は、前記有色層を介して、前記一対の基板の他方から射出されることを特徴とする発光装置。 - 一対の基板間に挟持された光電変換素子と発光素子とトランジスタと、を有し、
前記発光素子は、前記トランジスタと電気的に接続され、
前記トランジスタは、前記一対の基板の一方上に位置し、
前記発光素子は、前記トランジスタ上に位置し、
前記光電変換素子は、前記一対の基板の前記一方と前記発光素子との間に位置し、
前記光電変換素子は、前記発光素子と重なり、
前記光電変換素子は、前記発光素子からの放射光のうち特定波長帯域の光に対して透過性を示す有色層を有し、
前記発光素子からの放射光は、前記有色層を介して、前記一対の基板の前記一方から射出されることを特徴とする発光装置。 - 請求項1において、前記発光素子と前記光電変換素子との間には空間のみがあることを特徴とする発光装置。
- 請求項2において、前記発光素子と前記一対の基板の他方との間には空間があることを特徴とする発光装置。
- 請求項1乃至請求項4のいずれか一において、
前記光電変換素子は、有機太陽電池であることを特徴とする発光装置。 - 請求項1乃至請求項5のいずれか一において、
前記有色層は、赤色、緑色、または青色の光に対して透過性を示すことを特徴とする発光装置。 - 請求項1乃至請求項6のいずれか一において、
前記発光素子は、エレクトロルミネッセンス層を含むことを特徴とする発光装置。
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LAPS | Cancellation because of no payment of annual fees |