JP5388500B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5388500B2 JP5388500B2 JP2008204280A JP2008204280A JP5388500B2 JP 5388500 B2 JP5388500 B2 JP 5388500B2 JP 2008204280 A JP2008204280 A JP 2008204280A JP 2008204280 A JP2008204280 A JP 2008204280A JP 5388500 B2 JP5388500 B2 JP 5388500B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
Description
ここでは液晶表示装置を作製する例を、図1を用いて説明する。
ここでは有機薄膜トランジスタを用いたアクティブマトリクス型の発光装置を作製する例を、図2を用いて説明する。
ここではパッシブマトリクス型の発光装置を作製する例を図4乃至図8を用いて説明する。
本実施の形態では、無線チップとして機能する半導体装置を作製する例を示す。本実施の形態で示す半導体装置は、非接触でデータの読み出しと書き込みが可能であることを特徴としており、データの伝送形式は、一対のコイルを対向に配置して相互誘導によって交信を行う電磁結合方式、誘導電磁界によって交信する電磁誘導方式、電波を利用して交信する電波方式の3つに大別されるが、いずれの方式を用いてもよい。
ここでは非晶質半導体層を用いた半導体素子を有する半導体装置を作製する例を、図14を用いて説明する。非晶質半導体層を用いた半導体素子としては、薄膜トランジスタ、ダイオード、抵抗素子等がある。ここでは、非晶質半導体層を用いた半導体素子としてダイオードを用いた光電変換素子の例を用いて示す。
本発明により得られる液晶表示装置や発光装置によって、様々なモジュール(アクティブマトリクス型液晶モジュール、アクティブマトリクス型ELモジュール)に用いることができる。即ち、それらを表示部に組み込んだ電子機器全てに本発明を実施できる。
本実施の形態では、実施の形態6に記載の表示部として用いることが可能な電気泳動表示装置を用いる例を示す。代表的には図15(C)に示す携帯書籍(電子書籍)の表示部3002、または表示部3003に適用する。
Claims (9)
- 基板上にシリコーン層を形成し、
前記シリコーン層の上面を全てプラズマ処理して脆弱層を形成し、
前記脆弱層上に有機化合物層を形成し、
前記有機化合物層上に非晶質半導体層を形成し、
前記非晶質半導体層を用いて半導体素子を形成した後、前記有機化合物層、及び前記半導体素子を含む積層体を前記基板から剥離する半導体装置の作製方法であって、
前記脆弱層は、前記シリコーン層の表面の有機基が酸化された層でなることを特徴とする半導体装置の作製方法。 - 基板上にシリコーン層を形成し、
前記シリコーン層の上面を全てプラズマ処理して脆弱層を形成し、
前記脆弱層上に有機化合物層を形成し、
前記有機化合物層上に有機化合物を有する半導体層を形成し、
前記有機化合物を有する半導体層を用いて半導体素子を形成した後、前記有機化合物層、及び前記半導体素子を含む積層体を前記基板から剥離する半導体装置の作製方法であって、
前記脆弱層は、前記シリコーン層の表面の有機基が酸化された層でなることを特徴とする半導体装置の作製方法。 - 基板上にシリコーン層を形成し、
前記シリコーン層の上面を全てプラズマ処理して脆弱層を形成し、
前記脆弱層上に有機化合物層を形成し、
前記有機化合物層上に第1の電極を形成し、
前記第1の電極上に発光層を形成し、
前記発光層上に第2の電極を形成し、
前記第2の電極上に可撓性基板を貼り付けた後、前記有機化合物層、前記第1の電極、前記発光層、及び前記第2の電極を含む積層体を前記基板から剥離する半導体装置の作製方法であって、
前記脆弱層は、前記シリコーン層の表面の有機基が酸化された層でなることを特徴とする半導体装置の作製方法。 - 基板上にシリコーン層を形成し、
前記シリコーン層の上面を全てプラズマ処理して脆弱層を形成し、
前記脆弱層上に有機化合物層を形成し、
前記有機化合物層上に印刷法により導電層を印刷した後焼成し、
前記導電層及び半導体部品を貼り付けた後、前記有機化合物層、及び前記導電層を含む積層体、並びに半導体部品を前記基板から剥離する半導体装置の作製方法であって、
前記脆弱層は、前記シリコーン層の表面の有機基が酸化された層でなることを特徴とする半導体装置の作製方法。 - 基板上にシリコーン層を形成し、
前記シリコーン層の上面を全てプラズマ処理して脆弱層を形成し、
前記脆弱層上に有機化合物層を形成し、
前記有機化合物層上に印刷法により導電層を印刷した後焼成し、前記有機化合物層、及び前記導電層を含む積層体を前記基板から剥離した後、前記導電層に半導体部品を接続する半導体装置の作製方法であって、
前記脆弱層は、前記シリコーン層の表面の有機基が酸化された層でなることを特徴とする半導体装置の作製方法。 - 請求項4または5において、
前記導電層は、アンテナであることを特徴とする半導体装置の作製方法。 - 請求項1乃至6のいずれか一において、
前記基板は、ガラス基板、セラミックス基板、或いは石英基板であることを特徴とする半導体装置の作製方法。 - 請求項1乃至7のいずれか一において、
前記脆弱層は、酸化珪素層であることを特徴とする半導体装置の作製方法。 - 請求項1乃至8のいずれか一において、
前記有機化合物層を塗布法により形成することを特徴とする半導体装置の作製方法。
Priority Applications (1)
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JP2008204280A JP5388500B2 (ja) | 2007-08-30 | 2008-08-07 | 半導体装置の作製方法 |
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JP2008204280A JP5388500B2 (ja) | 2007-08-30 | 2008-08-07 | 半導体装置の作製方法 |
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JP2009076877A JP2009076877A (ja) | 2009-04-09 |
JP2009076877A5 JP2009076877A5 (ja) | 2011-07-28 |
JP5388500B2 true JP5388500B2 (ja) | 2014-01-15 |
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US (1) | US7838328B2 (ja) |
JP (1) | JP5388500B2 (ja) |
KR (1) | KR101514627B1 (ja) |
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JP3406727B2 (ja) | 1995-03-10 | 2003-05-12 | 株式会社半導体エネルギー研究所 | 表示装置 |
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US8415208B2 (en) | 2001-07-16 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
JP4836445B2 (ja) * | 2003-12-12 | 2011-12-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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JP2007251080A (ja) * | 2006-03-20 | 2007-09-27 | Fujifilm Corp | プラスチック基板の固定方法、回路基板およびその製造方法 |
TWI427702B (zh) * | 2006-07-28 | 2014-02-21 | Semiconductor Energy Lab | 顯示裝置的製造方法 |
JP4611270B2 (ja) * | 2006-09-27 | 2011-01-12 | Okiセミコンダクタ株式会社 | 半導体装置の製造方法 |
US7968382B2 (en) * | 2007-02-02 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
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2008
- 2008-08-07 JP JP2008204280A patent/JP5388500B2/ja not_active Expired - Fee Related
- 2008-08-25 US US12/197,482 patent/US7838328B2/en not_active Expired - Fee Related
- 2008-08-26 KR KR1020080083209A patent/KR101514627B1/ko active IP Right Grant
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US20090061721A1 (en) | 2009-03-05 |
JP2009076877A (ja) | 2009-04-09 |
KR101514627B1 (ko) | 2015-04-23 |
US7838328B2 (en) | 2010-11-23 |
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