JP2008072025A - 電界効果型トランジスタ及びその製造方法 - Google Patents
電界効果型トランジスタ及びその製造方法 Download PDFInfo
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Abstract
【解決手段】 酸化物半導体層中のソース電極及びドレイン電極と接する領域における水素又は重水素の濃度が、同層中の平均濃度に比べて大きい構成とする。また、水素又は重水素を含有するソース電極及びドレイン電極を形成し、これらの電極から酸化物半導体層に水素又は重水素を拡散させて電界効果型トランジスタを製造する。
【選択図】 図1
Description
図2にトップゲート型の電界効果型トランジスタの製造方法を示す。
まず、図2(a)に示すような基板10に、後にソース電極11及びドレイン電極12を形成するための電極層17を形成する(図2(b))。当該層17の形成には、スパッタ法、パルスレーザー蒸着法(PLD法)、電子ビーム蒸着法、化学気層蒸着法(CVD法)等を用いることができる。
基板10には、ガラス基板、プラスチック基板、プラスチックフィルムなどを用いることができる。
水素濃度の測定は、SIMS(2次イオン質量分析)にて評価することができる。
次に、図2(d)に示すように、パターニングされたソース電極11及びドレイン電極12を有する基板上に酸化物膜からなる酸化物半導体層13を形成する。
次に、図2(e)に示すように、酸化物半導体層13上にゲート絶縁層14を形成する。ゲート絶縁層14の作製には、スパッタ法、パルスレーザー蒸着法(PLD法)、電子ビーム蒸着法、化学気層蒸着法(CVD法)等を用いることができる。
次に、図2(f)に示すように、ゲート絶縁層14上にゲート電極15を形成する。ゲート電極15の作製には、スパッタ法、パルスレーザー蒸着法(PLD法)、電子ビーム蒸着法、化学気層蒸着法(CVD法)等を用いることができる。
次に、ソース電極11及びドレイン電極12に含まれる水素又は重水素を酸化物半導体層13中に拡散させる。
図1(a)、(b)に示す電界効果型トランジスタにおいて、10は基板、11はソース電極、12はドレイン電極、13は酸化物半導体層、14はゲート絶縁膜、15はゲート電極である。それぞれの構成要素の特徴は、上で説明したとおりである。
上記電界効果型トランジスタの出力端子であるドレインに、有機又は無機のエレクトロルミネッセンス(EL)素子、液晶素子等の表示素子の電極に接続することで表示装置を構成することができる。以下に表示装置の断面図を用いて具体的な表示装置構成の例を説明する。
まず、図2(a)に示すガラス基板10(コーニング社製1737)上に、図2(b)に示すように後にソース電極及びドレイン電極を形成するための電極層17をスパッタ法により形成する。電極材料にはITO(Indium Tin Oxide)を用い、膜厚は50nmとする。
次に、図2(e)及び(f)に示すように、ゲート絶縁層14とゲート電極15を形成する。
水素を含む電極から酸化物半導体膜中へ水素を拡散させることで、酸化物半導体と電極との寄生抵抗が低下することを以下の比較例で説明する。
まず、図4(a)に示すガラス基板10(コーニング社製1737)上に、図4(b)に示すように、後にソース電極及びドレイン電極を形成するための電極層17をスパッタ法により形成する。電極は、ガラス基板10上にTiを5nm成膜した後、Pt電極を50nm成膜する。
ゲート絶縁層材料にはSiO2を用い、スパッタ法により150nm堆積させる。また、フォトリソグラフィー法とリフトオフ法により、ゲート絶縁層14をパターニング形成する。
まず、図5(a)に示すような基板10(コーニング社製1737)上に、フォトリソグラフィー技術とエッチング技術を用いてゲート電極15をパターニング形成する(図5(b))。電極はガラス基板10上にスパッタ法を用いてTi(5nm)、Pt(50nm)の順に形成する。
11 ソース電極
12 ドレイン電極
13 酸化物半導体層
14 ゲート絶縁膜
15 ゲート電極
16 レーザー
17 後にソース電極及びドレイン電極を形成するための電極層
Claims (14)
- 電界効果型トランジスタの製造方法において、
水素又は重水素を含有するソース電極及びドレイン電極を形成する工程と、
水素又は重水素を添加すると電気抵抗値が低下する酸化物半導体層を形成する工程と、
前記ソース電極及びドレイン電極から前記酸化物半導体層に水素又は重水素を拡散させる工程とを備えたことを特徴とする電界効果型トランジスタの製造方法。 - 前記水素又は重水素を含有するソース電極及びドレイン電極を形成する工程は、
H2ガスを含む雰囲気中でソース電極及びドレイン電極を形成する工程、又はH2Oガスを含む雰囲気中でソース電極及びドレイン電極を形成する工程、又はソース電極及びドレイン電極の形成後に水素プラズマ処理する工程、又はソース電極及びドレイン電極の形成後に加速された水素イオンをこれらの電極に照射する工程であることを特徴とする請求項1に記載の電界効果型トランジスタの製造方法。 - 前記ソース電極及びドレイン電極から前記酸化物半導体層に水素又は重水素を拡散させる工程により拡散される水素イオン濃度は、前記酸化物半導体層中のソース電極及びドレイン電極に接する領域において0.1atm%乃至10atm%であることを特徴とする請求項1又は2に記載の電界効果トランジスタの製造方法。
- 前記ソース電極及びドレイン電極から前記酸化物半導体層に水素又は重水素を拡散させる工程により拡散される水素イオン濃度は、前記酸化物半導体層中のソース電極及びドレイン電極に接する領域において0.5atm%乃至5atm%であることを特徴とする請求項1又は2に記載の電界効果トランジスタの製造方法。
- 前記ソース電極及びドレイン電極から前記酸化物半導体層に水素又は重水素を拡散させる工程は、アニール処理であることを特徴とする請求項1乃至4のいずれか1項記載の電界効果型トランジスタの製造方法。
- 前記酸化物半導体層はInとGaとZnを含有したアモルファス酸化物材料で形成されていることを特徴とする請求項1乃至5のいずれか1項に記載の電界効果型トランジスタの製造方法。
- 電界効果型トランジスタにおいて、
半導体層は水素又は重水素を添加すると電気抵抗値が低下する酸化物半導体層からなり、
前記酸化物半導体層中のソース電極及びドレイン電極に接する領域における水素又は重水素の濃度が、前記酸化物半導体層中の水素又は重水素の平均濃度に比べて大きいことを特徴とする電界効果型トランジスタ。 - 前記酸化物半導体層中のソース電極及びドレイン電極に接する領域での水素イオン濃度は、0.1atm%乃至10atm%であることを特徴とする請求項7に記載の電界効果型トランジスタ。
- 前記酸化物半導体層中のソース電極及びドレイン電極に接する領域での水素イオン濃度は、0.5atm%乃至5atm%であることを特徴とする請求項7に記載の電界効果型トランジスタ。
- 前記酸化物半導体層はInとGaとZnを含有したアモルファス酸化物材料からなることを特徴とする請求項7乃至9のいずれか1項に記載の電界効果型トランジスタ。
- 表示素子の電極に、請求項7乃至10のいずれか1項に記載の電界効果型トランジスタのソース又はドレイン電極が接続されている表示装置。
- 前記表示素子がエレクトロルミネッセンス素子である、請求項11に記載の表示装置。
- 前記表示素子が液晶セルである、請求項11に記載の表示装置。
- 基板上に前記表示素子及び前記薄膜トランジスタが二次元的に複数配されている請求項11乃至13のいずれか1項に記載の表示装置。
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US20080272370A1 (en) | 2008-11-06 |
US20080067508A1 (en) | 2008-03-20 |
US7411209B2 (en) | 2008-08-12 |
US7737438B2 (en) | 2010-06-15 |
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