JP2010232647A - 半導体装置及び半導体装置の作製方法 - Google Patents
半導体装置及び半導体装置の作製方法 Download PDFInfo
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Classifications
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- Engineering & Computer Science (AREA)
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- General Physics & Mathematics (AREA)
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- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
【解決手段】半導体層を酸化物半導体層とする逆スタガ型薄膜トランジスタを含む半導体装置において、酸化物半導体層上にバッファ層を有する。バッファ層は、半導体層のチャネル形成領域と、ソース電極層及びドレイン電極層とに接する。バッファ層は膜内に抵抗分布を有し、半導体層のチャネル形成領域上に設けられる領域の電気伝導度は半導体層のチャネル形成領域の電気伝導度より低く、ソース電極層及びドレイン電極層と接する領域の電気伝導度は半導体層のチャネル形成領域の電気伝導度より高い。
【選択図】図1
Description
半導体装置及び半導体装置の作製方法を図1及び図2を用いて説明する。
ここでは、実施の形態1において、チャネル形成領域を有する酸化物半導体層とバッファ層とが異なるエッチング工程で加工された薄膜トランジスタを有する半導体装置の例を図3及び図4に示す。従って、他は実施の形態1と同様に行うことができ、実施の形態1と同一部分又は同様な機能を有する部分、及び工程の繰り返しの説明は省略する。
半導体装置及び半導体装置の作製方法の他の例を図5及び図6を用いて説明する。本実施の形態は、実施の形態1及び2において、バッファ層の材料及び作製方法が異なる例である。従って、他は実施の形態1及び2と同様に行うことができ、実施の形態1及び2と同一部分又は同様な機能を有する部分、及び工程の繰り返しの説明は省略する。
ここでは、実施の形態3において、チャネル形成領域を有する酸化物半導体層とバッファ層とが異なるエッチング工程で加工された薄膜トランジスタを有する半導体装置の例を図7及び図8に示す。従って、他は実施の形態3と同様に行うことができ、実施の形態3と同一部分又は同様な機能を有する部分、及び工程の繰り返しの説明は省略する。
薄膜トランジスタを含む半導体装置の作製工程について、図9乃至図16を用いて説明する。
上記実施の形態1、2、5において、バッファ層として用いる酸化物半導体層としてIn−Ga−Zn−O系非単結晶膜のかわりに、他の酸化物半導体膜を用いてもよい。
薄膜トランジスタを作製し、該薄膜トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、薄膜トランジスタを用いて駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
半導体装置として電子ペーパーの例を示す。
半導体装置として発光表示装置の例を示す。表示装置の有する表示素子としては、ここではエレクトロルミネッセンスを利用する発光素子を用いて示す。エレクトロルミネッセンスを利用する発光素子は、発光材料が有機化合物であるか、無機化合物であるかによって区別され、一般的に、前者は有機EL素子、後者は無機EL素子と呼ばれている。
本明細書に開示する半導体装置は、電子ペーパーとして適用することができる。電子ペーパーは、情報を表示するものであればあらゆる分野の電子機器に用いることが可能である。例えば、電子ペーパーを用いて、電子書籍(電子ブック)、ポスター、電車などの乗り物の車内広告、クレジットカード等の各種カードにおける表示等に適用することができる。電子機器の一例を図23、図24に示す。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
Claims (10)
- 絶縁表面を有する基板上に、ゲート電極層と、前記ゲート電極層上にゲート絶縁層と、前記ゲート絶縁層上にチャネル形成領域を含む酸化物半導体層と、前記酸化物半導体層上にバッファ層と、前記バッファ層上にソース電極層及びドレイン電極層を有し、
前記バッファ層において前記ソース電極層又は前記ドレイン電極層と接する第1の領域は前記酸化物半導体層の前記チャネル形成領域と接する第2の領域より電気伝導度が高いことを特徴とする半導体装置。 - 絶縁表面を有する基板上に、ゲート電極層と、前記ゲート電極層上にゲート絶縁層と、前記ゲート絶縁層上にチャネル形成領域を含む酸化物半導体層と、前記酸化物半導体層上にバッファ層と、前記バッファ層上にソース電極層及びドレイン電極層を有し、
前記バッファ層はチタン、モリブデン、又はマンガンを含む酸化物半導体層であり、
前記バッファ層において前記ソース電極層又は前記ドレイン電極層と接する第1の領域は前記酸化物半導体層の前記チャネル形成領域と接する第2の領域より電気伝導度が高いことを特徴とする半導体装置。 - 請求項2において、前記第2の領域に含まれる酸素濃度より前記第1の領域に含まれる酸素濃度が低いことを特徴とする半導体装置。
- 請求項2において、前記ソース電極層及び前記ドレイン電極層はチタン膜を含み、前記チタン膜が前記酸化物半導体層の第1の領域に接することを特徴とする半導体装置。
- 絶縁表面を有する基板上に、ゲート電極層と、前記ゲート電極層上にゲート絶縁層と、前記ゲート絶縁層上にチャネル形成領域を含む酸化物半導体層と、前記酸化物半導体層上にバッファ層と、前記バッファ層上にソース電極層及びドレイン電極層を有し、
前記バッファ層において前記ソース電極層又は前記ドレイン電極層と接する第1の領域は金属領域であり、前記酸化物半導体層の前記チャネル形成領域と接する第2の領域は金属酸化領域であり、
前記金属酸化領域は前記酸化物半導体層の前記チャネル形成領域より電気伝導度が低いことを特徴とする半導体装置。 - 絶縁表面を有する基板上にゲート電極層を形成し、
前記ゲート電極層上にゲート絶縁層を形成し、
前記ゲート絶縁層上にチャネル形成領域を含む第1の酸化物半導体層を形成し、
前記第1の酸化物半導体層上にチタン、モリブデン、又はマンガンを含む第2の酸化物半導体層を形成し、
前記第2の酸化物半導体層上にソース電極層及びドレイン電極層を形成し、
前記チタン、モリブデン、又はマンガンを含む第2の酸化物半導体層及び前記ソース電極層及びドレイン電極層に加熱処理を行い、前記第2の酸化物半導体層において前記ソース電極層又は前記ドレイン電極層と接する第1の領域は前記第1の酸化物半導体層の前記チャネル形成領域と接する第2の領域より電気伝導度を高めることを特徴とする半導体装置の作製方法。 - 請求項6において、前記加熱処理により前記第2の領域に含まれる酸素濃度より前記第1の領域に含まれる酸素濃度を低くすることを特徴とする半導体装置の作製方法。
- 請求項6において、前記ソース電極層及び前記ドレイン電極層はチタン膜を用い、前記チタン膜を前記第2の酸化物半導体層の第1の領域に接して形成することを特徴とする半導体装置の作製方法。
- 絶縁表面を有する基板上にゲート電極層を形成し、
前記ゲート電極層上にゲート絶縁層を形成し、
前記ゲート絶縁層上にチャネル形成領域を含む酸化物半導体層を形成し、
前記酸化物半導体層上に金属膜を形成し、
前記金属膜の第1の領域上にソース電極層及びドレイン電極層を形成し、
前記金属膜において、前記酸化物半導体層のチャネル形成領域に接する第2の領域に酸化処理を行い、金属酸化領域を形成することを特徴とする半導体装置の作製方法。 - 請求項9において、前記酸化処理として酸素プラズマ処理を行うことを特徴とする半導体装置の作製方法。
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