KR100532080B1 - 비정질 인듐 틴 옥사이드 식각용액 및 이를 이용한 액정표시소자의 제조방법 - Google Patents
비정질 인듐 틴 옥사이드 식각용액 및 이를 이용한 액정표시소자의 제조방법 Download PDFInfo
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- KR100532080B1 KR100532080B1 KR10-2001-0024664A KR20010024664A KR100532080B1 KR 100532080 B1 KR100532080 B1 KR 100532080B1 KR 20010024664 A KR20010024664 A KR 20010024664A KR 100532080 B1 KR100532080 B1 KR 100532080B1
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- South Korea
- Prior art keywords
- electrode
- hcl
- ito
- cooh
- etching
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 27
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 title claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000005530 etching Methods 0.000 claims abstract description 47
- 238000002161 passivation Methods 0.000 claims abstract description 25
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims abstract description 21
- 229910001182 Mo alloy Inorganic materials 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 238000000059 patterning Methods 0.000 claims abstract description 6
- 239000000243 solution Substances 0.000 claims description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 12
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 239000004973 liquid crystal related substance Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 25
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 abstract description 18
- 239000010409 thin film Substances 0.000 abstract description 13
- 239000011521 glass Substances 0.000 abstract description 9
- 238000000206 photolithography Methods 0.000 abstract description 9
- 235000006408 oxalic acid Nutrition 0.000 abstract description 6
- 239000002244 precipitate Substances 0.000 abstract description 4
- 238000001556 precipitation Methods 0.000 abstract description 3
- 230000006866 deterioration Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 230000005856 abnormality Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 25
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- 239000011259 mixed solution Substances 0.000 description 13
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Weting (AREA)
Abstract
Description
Claims (7)
- HCl과 CH3COOH 및 물을 혼합한 수용액으로 이루어지며, 상기 HCl과 CH3COOH의 중량비가 물에 대하여 각각 1~10%인 비정질 진 인듐 틴 옥사이드의 식각용액.
- 삭제
- 제 1항에 있어서, 상기 HCl과 CH3COOH의 물에 대한 중량비가 각각 5%인 것을 특징으로 하는 비정질 인듐 틴 옥사이드의 식각용액.
- 기판을 준비하는 단계;상기 기판의 상부에 게이트전극을 형성하고, 그 위에 게이트절연막과 비정질실리콘을 증착한 후 비정질실리콘을 패터닝하여 액티브영역을 형성하는 단계;상기 액티브영역 상부에 소스전극과 드레인전극을 형성한 다음, 상기 구조의 상부에 패시베이션막을 증착한 후, 상기 드레인전극의 일부를 노출시키는 콘택홀을 형성하는 단계;상기 패시베이션 위에 a-ITO(AMORPHOUS INDIUM TIN OXIDE)을 증착하는 단계; 및물에 대한 중량비가 각각 1~10%이내인 HCl과 CH3COOH가 혼합된 수용액을 식각용액으로 하여 상기 ITO를 패터닝함으로써, 화소전극을 형성하는 단계로 이루어지는 액정표시소자의 제조방법.
- 삭제
- 제 4항에 있어서, 상기 HCl과 CH3COOH의 물에 대한 중량비가 각각 5%인 것을 특징으로 하는 액정표시소자의 제조방법.
- 제 4항에 있어서, 상기 소스전극 및 드레인전극은 Mo 또는 Mo합금으로 형성하는 것을 특징으로 하는 액정표시소자의 제조방법.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0024664A KR100532080B1 (ko) | 2001-05-07 | 2001-05-07 | 비정질 인듐 틴 옥사이드 식각용액 및 이를 이용한 액정표시소자의 제조방법 |
US10/138,639 US6624087B2 (en) | 2001-05-07 | 2002-05-06 | Etchant for patterning indium tin oxide and method of fabricating liquid crystal display device using the same |
JP2002131546A JP2003051496A (ja) | 2001-05-07 | 2002-05-07 | インジウム錫酸化物のパターニングのためのエッチング溶液及び該エッチング溶液を利用した液晶表示装置の製造方法 |
CNB021191115A CN1268975C (zh) | 2001-05-07 | 2002-05-08 | 构图铟锡氧化物的蚀刻剂和制造液晶显示装置的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0024664A KR100532080B1 (ko) | 2001-05-07 | 2001-05-07 | 비정질 인듐 틴 옥사이드 식각용액 및 이를 이용한 액정표시소자의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020085260A KR20020085260A (ko) | 2002-11-16 |
KR100532080B1 true KR100532080B1 (ko) | 2005-11-30 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2001-0024664A KR100532080B1 (ko) | 2001-05-07 | 2001-05-07 | 비정질 인듐 틴 옥사이드 식각용액 및 이를 이용한 액정표시소자의 제조방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6624087B2 (ko) |
JP (1) | JP2003051496A (ko) |
KR (1) | KR100532080B1 (ko) |
CN (1) | CN1268975C (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI364072B (en) * | 2004-03-18 | 2012-05-11 | Dongjin Semichem Co Ltd | Etching composition |
US7329365B2 (en) * | 2004-08-25 | 2008-02-12 | Samsung Electronics Co., Ltd. | Etchant composition for indium oxide layer and etching method using the same |
JP2006330021A (ja) * | 2005-05-23 | 2006-12-07 | Mitsubishi Electric Corp | 液晶表示装置 |
KR101402189B1 (ko) * | 2007-06-22 | 2014-06-02 | 삼성전자주식회사 | Zn 산화물계 박막 트랜지스터 및 Zn 산화물의 식각용액 |
CN101630098B (zh) * | 2008-07-18 | 2010-12-08 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
KR101671210B1 (ko) | 2009-03-06 | 2016-11-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
WO2011065210A1 (en) | 2009-11-28 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device |
KR102304078B1 (ko) | 2009-11-28 | 2021-09-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
KR101825345B1 (ko) | 2009-11-28 | 2018-02-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 적층 산화물 재료, 반도체 장치 및 반도체 장치의 제작 방법 |
KR101878206B1 (ko) | 2010-03-05 | 2018-07-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막의 제작 방법 및 트랜지스터의 제작 방법 |
TWI562379B (en) | 2010-11-30 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing semiconductor device |
JP5920972B2 (ja) * | 2011-12-26 | 2016-05-24 | メック株式会社 | 配線形成方法およびエッチング液 |
CN103805203B (zh) * | 2014-02-17 | 2015-11-04 | 昆山市板明电子科技有限公司 | 选择性氧化铟锡蚀刻液 |
US9868902B2 (en) | 2014-07-17 | 2018-01-16 | Soulbrain Co., Ltd. | Composition for etching |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH05224220A (ja) * | 1992-02-07 | 1993-09-03 | Canon Inc | 液晶表示素子用基板のパタ−ン形成方法 |
JPH0660744A (ja) * | 1992-03-13 | 1994-03-04 | Philips Gloeilampenfab:Nv | 基板上にスズ−添加酸化インジウム(ito)の導電性パターンを製法する方法 |
JPH0778691A (ja) * | 1993-09-09 | 1995-03-20 | Nippondenso Co Ltd | エレクトロルミネッセンス素子とその製造方法 |
KR19990074547A (ko) * | 1998-03-12 | 1999-10-05 | 윤종용 | 인듐 틴 옥사이드용 식각액 및 이를 이용한액정 표시 장치의제조 방법 |
JP2000307118A (ja) * | 1999-04-21 | 2000-11-02 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタおよびその製造方法 |
KR20010004016A (ko) * | 1999-06-28 | 2001-01-15 | 김영환 | 박막 트랜지스터 액정표시소자의 제조방법 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4055923B2 (ja) * | 1999-04-22 | 2008-03-05 | 株式会社Adeka | Ito膜除去用組成物及びこれを用いたito膜除去方法 |
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2001
- 2001-05-07 KR KR10-2001-0024664A patent/KR100532080B1/ko active IP Right Grant
-
2002
- 2002-05-06 US US10/138,639 patent/US6624087B2/en not_active Expired - Lifetime
- 2002-05-07 JP JP2002131546A patent/JP2003051496A/ja active Pending
- 2002-05-08 CN CNB021191115A patent/CN1268975C/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05224220A (ja) * | 1992-02-07 | 1993-09-03 | Canon Inc | 液晶表示素子用基板のパタ−ン形成方法 |
JPH0660744A (ja) * | 1992-03-13 | 1994-03-04 | Philips Gloeilampenfab:Nv | 基板上にスズ−添加酸化インジウム(ito)の導電性パターンを製法する方法 |
JPH0778691A (ja) * | 1993-09-09 | 1995-03-20 | Nippondenso Co Ltd | エレクトロルミネッセンス素子とその製造方法 |
KR19990074547A (ko) * | 1998-03-12 | 1999-10-05 | 윤종용 | 인듐 틴 옥사이드용 식각액 및 이를 이용한액정 표시 장치의제조 방법 |
JP2000307118A (ja) * | 1999-04-21 | 2000-11-02 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタおよびその製造方法 |
KR20010004016A (ko) * | 1999-06-28 | 2001-01-15 | 김영환 | 박막 트랜지스터 액정표시소자의 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
US20020164888A1 (en) | 2002-11-07 |
KR20020085260A (ko) | 2002-11-16 |
JP2003051496A (ja) | 2003-02-21 |
US6624087B2 (en) | 2003-09-23 |
CN1384400A (zh) | 2002-12-11 |
CN1268975C (zh) | 2006-08-09 |
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