JP2013110401A - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法 Download PDFInfo
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- JP2013110401A JP2013110401A JP2012236338A JP2012236338A JP2013110401A JP 2013110401 A JP2013110401 A JP 2013110401A JP 2012236338 A JP2012236338 A JP 2012236338A JP 2012236338 A JP2012236338 A JP 2012236338A JP 2013110401 A JP2013110401 A JP 2013110401A
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- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- UMJICYDOGPFMOB-UHFFFAOYSA-N zinc;cadmium(2+);oxygen(2-) Chemical compound [O-2].[O-2].[Zn+2].[Cd+2] UMJICYDOGPFMOB-UHFFFAOYSA-N 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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Abstract
【解決手段】Inと、M1と、M2と、Znと、を含む酸化物材料であり、M1=13族元素、代表的にはGaであり、M2の元素は、M1の元素よりも含有量が少ない材料を提供する。M2としてはTi、Zr、Hf、Ge、Snなどが挙げられる。M2を含ませることで、酸化物半導体材料における酸素欠損の発生を抑制することができる。酸素欠損がほとんど存在しないトランジスタを実現できれば、半導体装置の信頼性を向上させることができる。
【選択図】図1
Description
本実施の形態では、半導体装置及び半導体装置の作製方法の一態様を図1(A)を用いて説明する。
本実施の形態では、実施の形態1とは異なる構造の例を図1(C)及び図1(D)に示す。なお、実施の形態1と同一の箇所は同じ符号を用い、ここでは簡略化のため詳細な説明は省略することとする。
本実施の形態では、実施の形態1とは異なる構造の例を図2(A)及び図2(B)に示す。なお、実施の形態1と同一の箇所は同じ符号を用い、ここでは簡略化のため詳細な説明は省略することとする。
本実施の形態では、実施の形態1とは異なる構造の例を図2(C)及び図2(D)に示す。なお、実施の形態1と同一の箇所は同じ符号を用い、ここでは簡略化のため詳細な説明は省略することとする。
実施の形態1乃至4は、トップゲート型構造の例を示したが、本実施の形態では、ボトムゲート型構造(チャネルストップ型とも呼ぶ)の例を示す。
本実施の形態では、実施の形態5と一部異なる構造のトランジスタの例を図3(C)、及び図3(D)に示す。
本実施の形態では、実施の形態5と一部異なる構造のトランジスタの例を図4(A)、及び図4(B)に示す。
実施の形態5又は実施の形態6又は実施の形態7に示したトランジスタを用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、トランジスタを含む駆動回路の一部又は全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
本実施の形態では、本明細書に示すトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置の一例を、図面を用いて説明する。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、テレビジョン装置(テレビ、又はテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ等のカメラ、デジタルフォトフレーム、携帯電話機、携帯型ゲーム機、携帯情報端末、音響再生装置、遊技機(パチンコ機、スロットマシン等)、ゲーム筐体が挙げられる。これらの電子機器の具体例を図10に示す。
142a:電極層
142b:電極層
162:トランジスタ
250:メモリセル
251:メモリセルアレイ
251a:メモリセルアレイ
251b:メモリセルアレイ
253:周辺回路
254:容量素子
256:絶縁膜
258:絶縁膜
260:配線
262:導電層
400:基板
401:ゲート電極層
402:ゲート絶縁層
403:酸化物半導体層
403a:低抵抗領域
403b:低抵抗領域
403c:チャネル形成領域
405a:ソース電極層
405b:ドレイン電極層
406:絶縁層
407:絶縁層
412a:側壁絶縁層
412b:側壁絶縁層
413:絶縁層
414:絶縁層
415:絶縁層
420:トランジスタ
421:トランジスタ
422:トランジスタ
423:トランジスタ
424:トランジスタ
425:トランジスタ
426:トランジスタ
435a:開口
435b:開口
436:下地絶縁層
465a:ソース配線層
465b:ドレイン配線層
500:基板
501:絶縁膜
502:ゲート絶縁層
503:絶縁層
504:層間絶縁膜
505:カラーフィルタ層
506:絶縁膜
507:隔壁
510:トランジスタ
511a:ゲート電極層
511b:ゲート電極層
512:酸化物半導体層
513a:導電層
513b:導電層
520:容量素子
521a:導電層
521b:導電層
522:酸化物半導体層
523:導電層
530:配線層交差部
533:導電層
540:発光素子
541:電極層
542:電界発光層
543:電極層
4001:基板
4002:画素部
4003:信号線駆動回路
4004:走査線駆動回路
4005:シール材
4006:基板
4008:液晶層
4010:トランジスタ
4011:トランジスタ
4013:液晶素子
4015:接続端子電極
4016:端子電極
4018:FPC
4019:異方性導電膜
4020:絶縁膜
4021:絶縁膜
4023:絶縁膜
4024:絶縁膜
4030:電極層
4031:電極層
4032:絶縁膜
4033:絶縁膜
4035:スペーサ
4510:隔壁
4511:電界発光層
4513:発光素子
4514:充填材
9000:テーブル
9001:筐体
9002:脚部
9003:表示部
9004:表示ボタン
9005:電源コード
9033:留め具
9034:スイッチ
9035:電源スイッチ
9036:スイッチ
9038:操作スイッチ
9100:テレビジョン装置
9101:筐体
9103:表示部
9105:スタンド
9107:表示部
9109:操作キー
9110:リモコン操作機
9201:本体
9202:筐体
9203:表示部
9204:キーボード
9205:外部接続ポート
9206:ポインティングデバイス
9630:筐体
9631:表示部
9631a:表示部
9631b:表示部
9632a:領域
9632b:領域
9633:太陽電池
9634:充放電制御回路
9635:バッテリー
9636:DCDCコンバータ
9637:コンバータ
9638:操作キー
9639:ボタン
Claims (8)
- ゲート電極層と、
前記ゲート電極層と重なるゲート絶縁層と、
前記ゲート絶縁層を介して前記ゲート電極層と重なる酸化物半導体層とを有し、
前記酸化物半導体層は、Inと、M1と、M2と、Znと、を含む酸化物材料であり、
前記M1の元素は、13族元素であり、
前記M2の元素は、前記M1の元素よりも含有量が少なく、
前記M2はチタン、ジルコニウム、ハフニウム、ゲルマニウム、錫のいずれか一であることを特徴とする半導体装置。 - 請求項1において前記M1はガリウムであることを特徴とする半導体装置。
- 請求項1または請求項2において前記M2はチタンであることを特徴とする半導体装置。
- 請求項1乃至3のいずれか一において、前記M1の元素の含有量に対して前記M2の元素の含有量は1%以上50%未満であることを特徴とする半導体装置。
- Inと、M1と、M2と、Znと、を含む酸化物材料であり、
前記M1の元素は、13族元素であり、
前記M2の元素は、前記M1の元素よりも含有量が少なく、
前記M2はチタン、ジルコニウム、ハフニウム、ゲルマニウム、錫のいずれか一であることを特徴とする酸化物材料。 - 請求項5において前記M1はガリウムであることを特徴とする酸化物材料。
- 請求項5または請求項6において前記M2はチタンであることを特徴とする酸化物材料。
- 請求項5乃至7のいずれか一において、前記M1の元素の含有量に対して前記M2の元素の含有量は1%以上50%未満であることを特徴とする酸化物材料。
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US9076871B2 (en) | 2011-11-30 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
TWI588910B (zh) | 2011-11-30 | 2017-06-21 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
US9099560B2 (en) | 2012-01-20 | 2015-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR20140125181A (ko) * | 2013-04-18 | 2014-10-28 | 삼성디스플레이 주식회사 | 평판표시장치용 백플레인 및 그의 제조방법 |
US9577110B2 (en) | 2013-12-27 | 2017-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including an oxide semiconductor and the display device including the semiconductor device |
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JP6527416B2 (ja) | 2014-07-29 | 2019-06-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US9837547B2 (en) * | 2015-05-22 | 2017-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide conductor and display device including the semiconductor device |
KR102434053B1 (ko) * | 2015-11-16 | 2022-08-19 | 삼성전자주식회사 | 반도체 메모리 장치, 이를 포함하는 메모리 시스템 및 이의 동작 방법 |
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- 2012-10-22 US US13/657,196 patent/US9816173B2/en not_active Expired - Fee Related
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JP7032067B2 (ja) | 2016-07-11 | 2022-03-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Also Published As
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US20130105792A1 (en) | 2013-05-02 |
WO2013061895A1 (en) | 2013-05-02 |
TW201322452A (zh) | 2013-06-01 |
US9816173B2 (en) | 2017-11-14 |
TWI539599B (zh) | 2016-06-21 |
KR20140086954A (ko) | 2014-07-08 |
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