JP7032067B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP7032067B2 JP7032067B2 JP2017134557A JP2017134557A JP7032067B2 JP 7032067 B2 JP7032067 B2 JP 7032067B2 JP 2017134557 A JP2017134557 A JP 2017134557A JP 2017134557 A JP2017134557 A JP 2017134557A JP 7032067 B2 JP7032067 B2 JP 7032067B2
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- Prior art keywords
- metal oxide
- film
- oxide layer
- insulating film
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052738 indium Inorganic materials 0.000 description 25
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical group [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- UFTQLBVSSQWOKD-UHFFFAOYSA-N tellanylidenecalcium Chemical compound [Te]=[Ca] UFTQLBVSSQWOKD-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 150000003498 tellurium compounds Chemical class 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- XPDICGYEJXYUDW-UHFFFAOYSA-N tetraarsenic tetrasulfide Chemical compound S1[As]2S[As]3[As]1S[As]2S3 XPDICGYEJXYUDW-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- WYUZTTNXJUJWQQ-UHFFFAOYSA-N tin telluride Chemical compound [Te]=[Sn] WYUZTTNXJUJWQQ-UHFFFAOYSA-N 0.000 description 1
- AFNRRBXCCXDRPS-UHFFFAOYSA-N tin(ii) sulfide Chemical compound [Sn]=S AFNRRBXCCXDRPS-UHFFFAOYSA-N 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- FPZZZGJWXOHLDJ-UHFFFAOYSA-N trihexylphosphane Chemical compound CCCCCCP(CCCCCC)CCCCCC FPZZZGJWXOHLDJ-UHFFFAOYSA-N 0.000 description 1
- ZMBHCYHQLYEYDV-UHFFFAOYSA-N trioctylphosphine oxide Chemical compound CCCCCCCCP(=O)(CCCCCCCC)CCCCCCCC ZMBHCYHQLYEYDV-UHFFFAOYSA-N 0.000 description 1
- KCTAHLRCZMOTKM-UHFFFAOYSA-N tripropylphosphane Chemical compound CCCP(CCC)CCC KCTAHLRCZMOTKM-UHFFFAOYSA-N 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Description
本実施の形態では、本発明の一態様の金属酸化物を有する半導体装置、及び当該半導体装置の作製方法について、図4乃至図7を参照して説明する。
基板202の材質などに大きな制限はないが、少なくとも、後の熱処理に耐えうる程度の耐熱性を有している必要がある。例えば、ガラス基板、セラミック基板、石英基板、サファイア基板等を、基板202として用いてもよい。また、シリコンや炭化シリコンを材料とした単結晶半導体基板、多結晶半導体基板、シリコンゲルマニウム等の化合物半導体基板、SOI基板等を適用することも可能であり、これらの基板上に半導体素子が設けられたものを、基板202として用いてもよい。なお、基板202として、ガラス基板を用いる場合、第6世代(1500mm×1850mm)、第7世代(1870mm×2200mm)、第8世代(2200mm×2400mm)、第9世代(2400mm×2800mm)、第10世代(2950mm×3400mm)等の大面積基板を用いることで、大型の表示装置を作製することができる。
第1のゲート電極として機能する導電膜206、ソース電極として機能する導電膜220a、ドレイン電極として機能する導電膜220b、第2のゲート電極として機能する導電膜212としては、クロム(Cr)、銅(Cu)、アルミニウム(Al)、金(Au)、銀(Ag)、亜鉛(Zn)、モリブデン(Mo)、タンタル(Ta)、チタン(Ti)、タングステン(W)、マンガン(Mn)、ニッケル(Ni)、鉄(Fe)、コバルト(Co)から選ばれた金属元素、または上述した金属元素を成分とする合金か、上述した金属元素を組み合わせた合金等を用いてそれぞれ形成することができる。
トランジスタの第1のゲート絶縁膜として機能する絶縁膜204としては、プラズマ化学気相堆積(PECVD:(Plasma Enhanced Chemical Vapor Deposition))法、スパッタリング法等により、酸化シリコン膜、酸化窒化シリコン膜、窒化酸化シリコン膜、窒化シリコン膜、酸化アルミニウム膜、酸化ハフニウム膜、酸化イットリウム膜、酸化ジルコニウム膜、酸化ガリウム膜、酸化タンタル膜、酸化マグネシウム膜、酸化ランタン膜、酸化セリウム膜および酸化ネオジム膜を一種以上含む絶縁層を用いることができる。なお、絶縁膜204としては、上述の材料から選択された単層の絶縁膜、または2層以上の絶縁膜を用いてもよい。
金属酸化物208としては、本発明の一態様の金属酸化物層の多層構造を用いることができる。
絶縁膜210は、トランジスタの第2のゲート絶縁膜として機能する。また、絶縁膜210は、金属酸化物208に酸素を供給する機能を有する。すなわち、絶縁膜210は、酸素を有する。
絶縁膜216は、トランジスタの保護絶縁膜として機能する。
次に、本発明の一態様の半導体装置であるトランジスタ200Cの作製方法について、図5乃至図7を用いて説明する。
また、金属酸化物層208_1a、金属酸化物層208_2a、及び金属酸化物層208_3aを形成する際に、酸素ガスの他に、不活性ガス(例えば、ヘリウムガス、アルゴンガス、キセノンガスなど)を混合させてもよい。なお、金属酸化物層208_1aを形成する際の成膜ガス全体に占める酸素ガスの割合(以下、酸素流量比ともいう)としては、70%以上100%以下、好ましくは80%以上100%以下、さらに好ましくは90%以上100%以下である。また、金属酸化物層208_2aを形成する際の酸素流量比としては、0%より大きく30%以下、好ましくは5%以上15%以下である。また、金属酸化物層208_3aを形成する際の酸素流量比としては、70%以上100%以下、好ましくは80%以上100%以下、さらに好ましくは90%以上100%以下である。
本実施の形態では、実施の形態1に示したトランジスタ200Cの変形例について、図9を用いて説明する。
本実施の形態では、実施の形態1に示したトランジスタ200Cの変形例について、図11を用いて説明する。
本実施の形態では、実施の形態1のトランジスタを用いる本発明の一態様の表示装置について、図12乃至図15を用いて説明を行う。
絶縁膜404、406、408、410a、410b、410c、412、413、416、418、606としては、絶縁性の無機材料、絶縁性の有機材料、または絶縁性の無機材料と絶縁性の有機材料とを含む絶縁性の複合材料を用いることができる。
本実施の形態では、本発明の一態様である表示モジュールを有する携帯情報端末6000について説明する。
本実施の形態では、本発明の一態様に係る表示装置を用いた電子機器の一例について説明する。
108 金属酸化物
200C トランジスタ
200D トランジスタ
202 基板
204 絶縁膜
206 導電膜
208 金属酸化物
210 絶縁膜
216 絶縁膜
218 絶縁膜
220a 導電膜
220b 導電膜
240 マスク
241a 開口部
241b 開口部
243 開口部
Claims (1)
- トランジスタを有し、
前記トランジスタの半導体層は、第1の金属酸化物層と、前記第1の金属酸化物層上の第2の金属酸化物層と、前記第2の金属酸化物層上の第3の金属酸化物層と、前記第3の金属酸化物層上の第4の金属酸化物層と、前記第4の金属酸化物層上の第5の金属酸化物層と、を有する半導体層を含み、
前記第2の金属酸化物層のエネルギーバンドの伝導帯下端のエネルギー準位は、前記第1の金属酸化物層のエネルギーバンドの伝導帯下端のエネルギー準位よりも低く、
前記第3の金属酸化物層のエネルギーバンドの伝導帯下端のエネルギー準位は、前記第2の金属酸化物層のエネルギーバンドの伝導帯下端のエネルギー準位よりも高く、且つ、前記第1の金属酸化物層のエネルギーバンドの伝導帯下端のエネルギー準位よりも低く、
前記第4の金属酸化物層のエネルギーバンドの伝導帯下端のエネルギー準位は、前記第3の金属酸化物層のエネルギーバンドの伝導帯下端のエネルギー準位よりも低く、
前記第5の金属酸化物層のエネルギーバンドの伝導帯下端のエネルギー準位は、前記第2の金属酸化物層のエネルギーバンドの伝導帯下端のエネルギー準位よりも高く、且つ、前記第3の金属酸化物層のエネルギーバンドの伝導帯下端のエネルギー準位よりも高く、且つ、前記第4の金属酸化物層のエネルギーバンドの伝導帯下端のエネルギー準位よりも高い、半導体装置。
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TWI754542B (zh) | 2016-07-11 | 2022-02-01 | 日商半導體能源研究所股份有限公司 | 濺射靶材及金屬氧化物 |
CN108878264B (zh) * | 2018-06-29 | 2020-12-25 | 云南大学 | 一种金属氧化物叠层场效应材料的制备方法 |
CN109888019B (zh) * | 2019-01-29 | 2021-04-02 | 中山大学 | 一种基于准调制掺杂效应的异质结构氧化物薄膜晶体管 |
CN110190066A (zh) * | 2019-05-14 | 2019-08-30 | 深圳市华星光电技术有限公司 | 阵列基板和阵列基板的制备方法 |
US11721767B2 (en) * | 2020-06-29 | 2023-08-08 | Taiwan Semiconductor Manufacturing Company Limited | Oxide semiconductor transistor structure in 3-D device and methods of forming the same |
CN113809163B (zh) * | 2021-09-17 | 2023-11-24 | 武汉天马微电子有限公司 | 金属氧化物晶体管、显示面板及显示装置 |
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