TWI243480B - Semiconductor device, fabrication method thereof, and electronic device - Google Patents
Semiconductor device, fabrication method thereof, and electronic device Download PDFInfo
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- TWI243480B TWI243480B TW093117707A TW93117707A TWI243480B TW I243480 B TWI243480 B TW I243480B TW 093117707 A TW093117707 A TW 093117707A TW 93117707 A TW93117707 A TW 93117707A TW I243480 B TWI243480 B TW I243480B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 183
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 25
- 238000009413 insulation Methods 0.000 claims abstract description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 88
- 239000012212 insulator Substances 0.000 claims description 47
- 229910052757 nitrogen Inorganic materials 0.000 claims description 43
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 27
- 229910052593 corundum Inorganic materials 0.000 claims description 27
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 27
- 239000011347 resin Substances 0.000 claims description 25
- 229920005989 resin Polymers 0.000 claims description 25
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 18
- 238000002955 isolation Methods 0.000 claims description 18
- 239000001257 hydrogen Substances 0.000 claims description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims description 17
- 229910052681 coesite Inorganic materials 0.000 claims description 15
- 229910052906 cristobalite Inorganic materials 0.000 claims description 15
- 239000006104 solid solution Substances 0.000 claims description 15
- 229910052682 stishovite Inorganic materials 0.000 claims description 15
- 229910052905 tridymite Inorganic materials 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910001953 rubidium(I) oxide Inorganic materials 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 229910002113 barium titanate Inorganic materials 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 12
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 11
- -1 ln203 Inorganic materials 0.000 claims description 10
- 229910021529 ammonia Inorganic materials 0.000 claims description 9
- 229910052787 antimony Inorganic materials 0.000 claims description 9
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 8
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 229910021523 barium zirconate Inorganic materials 0.000 claims description 2
- 229910021480 group 4 element Inorganic materials 0.000 claims description 2
- 229910021476 group 6 element Inorganic materials 0.000 claims description 2
- 229910021474 group 7 element Inorganic materials 0.000 claims description 2
- MAYPHUUCLRDEAZ-UHFFFAOYSA-N chlorine peroxide Inorganic materials ClOOCl MAYPHUUCLRDEAZ-UHFFFAOYSA-N 0.000 claims 1
- OSVXSBDYLRYLIG-UHFFFAOYSA-N dioxidochlorine(.) Chemical compound O=Cl=O OSVXSBDYLRYLIG-UHFFFAOYSA-N 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 84
- 239000000758 substrate Substances 0.000 abstract description 45
- 239000003574 free electron Substances 0.000 abstract description 20
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 238000002161 passivation Methods 0.000 abstract 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 364
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 134
- 239000011241 protective layer Substances 0.000 description 76
- 239000011787 zinc oxide Substances 0.000 description 53
- 239000010408 film Substances 0.000 description 31
- 239000004973 liquid crystal related substance Substances 0.000 description 20
- 239000000463 material Substances 0.000 description 18
- 238000000151 deposition Methods 0.000 description 17
- 239000003990 capacitor Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 14
- 239000011159 matrix material Substances 0.000 description 13
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 11
- 229910052720 vanadium Inorganic materials 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 229910052785 arsenic Inorganic materials 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 230000005669 field effect Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000001272 nitrous oxide Substances 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 229910021478 group 5 element Inorganic materials 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052722 tritium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 206010028980 Neoplasm Diseases 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004413 SrSn Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910007390 Zn2Sb3 Inorganic materials 0.000 description 1
- AIRRSBIRSIPRGM-UHFFFAOYSA-N [N].[Hf] Chemical compound [N].[Hf] AIRRSBIRSIPRGM-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 201000011510 cancer Diseases 0.000 description 1
- 210000004903 cardiac system Anatomy 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Dram (AREA)
Description
1243480 九、發明說明： 【發明所屬之技術領域】 本發明係有關具有氧化辞類活性層之半導體裝置，有關 適於用在電子裝置之開關元件之半導體裝置及使用其之電 子裝置。 【先前技術】 以往，氧化鋅（ZnO)在可視光區域為透明，而且是於低 溫製作亦顯示較佳物性之半導體。因此，近年來頻繁地進 行研究，並有各種技術報告。 例如：在學術上有發表文獻1至3之論文，此等論文均表 示以ZnO作為活性層之薄膜電晶體動作性能良好。 (1) 文獻1 R.L. Hoffman, B.J. Norris and J.F. Wager, ff ZnO-based transparent thin-film transistors (ZnO製透明薄膜電晶體）M APPLIED PHYSICS LETTERS VOLUME 82, NUMBER 5, 3 FEBRUARY 2003, pp733-735。 (2) 文獻2 P.F.Carcia, R.S.McLean, M.H.Reilly and G.Nunes, Jr. ’’Transparent ZnO thin-film transistors fabricated by rf magnetron suputtering(rf磁控賤鑛所製造之透明ZnO薄膜電 晶體），，APPLIED PHYSICS LETTERS VOLUME 82, NUMBER 7, 17 FEBRUARY 2003, pplll7-1119 〇 (3) 文獻3
Junya NISHII et al·，’’High Performance Thin Film Transistors 1243480 with Transparent ZnO Channels(附透明 ZnO通道之高效能 ^ t aaa It )ff Jpn. J. Appl. Phys. Vol. 42. (2003) pp L347-L349, Part 2, No. 4A，1 April 2003 又，關於專利文獻，文獻4至文獻6揭示將ZnO用於半導 體之技術。 (4) 文獻4 特開2000-150900公報（公開日·· 2000年5月30日） (5) 文獻5 特開2000-277534公報（公開日：2000年10月6曰） (6) 文獻6 特開2002-76356公報（公開日：2002年3月15曰） (7) 文獻7 特開昭63-101740號公報（公開曰：1988年5月6曰） 文獻4記載將氧化鋅等透明半導體使用於電晶體之通道 層，於閘極絕緣層亦使用透明絕緣性氧化物，以使電晶體 透明。 文獻5記載藉由選擇底層膜之材料，解除氧化鋅與底層 膜之晶格不整合，可達成含有使用氧化辞之薄膜電晶體之 半導體裝置之高性能化。 文獻6記載為了改善具有氧化鋅等之透明通道層之電晶 體之開關比特性或遷移率特性，於氧化鋅摻雜3d過渡金屬 等方法。 藉由上述論文及文獻，表示採用氧化鋅之電晶體之有效 1243480 古然而’如文獻7所揭示，由於氧化辞對於氣氛之感受度 Γ7採用氧化辞之裝置之特性大幅變化，因此在實用性 ^心/頁藉由保遵層（絕緣物）將氧化鋅從氣氛隔絕。文獻4 。己載將通道層使用氧化鋅之立式場效電晶體作為氣體感測 器利用。 於上述文獻1、2及3,在構造上並未賦予保護層，未論 及保護層Μ所造成之影響。又，於文獻4、5及6,雖在 構造上有例示與氣氛之隔絕，但並未論及㈣保護層（在 此，閘極絕緣層與其對應）賦予之影響。 關於將氧化辞用於活性層之電晶體，在實用上，其特性 要求安定性’使用對於氣氛之感受度高之氧化鋅時，從氣 氛隔絕為絕對條件。在此意義上，必須論及有關保護層賦 予所造成之影響，於以下說明該事項。 圖14⑷係表示未賦予保護層之電晶體5〇。此電晶體_ 成相反參差構造’於玻璃基板52上，以Ta形成之問極Μ 上’經由以ai2〇3所形成之閘極絕緣膜54，特意未進行摻 雜之氧化辞係作為半導體層55而層疊。於此半導體層Μ 上’形成A1所構成之源極56及汲極57。 圖14(b)係表示賦予保護層之電晶體51。此電晶體η係 :上：電晶體5。，進一步αΑΐ2〇3形成保護層58，以便^ 盍半導體層55、源極56及汲極57之一部分之構造。 圖15係表示氧化鋅用於活性層（半導體層55)之同一場效 電晶體之保護層之有無之Id-Vg特性。 由圖15可知’由於保護層之有無，臨限值電壓大幅變 93979 1243480 化。相較於未被賤予保護層之 護層之電晶體之臨限 sa — m又值，被賦予保 之大的負值。 大幅朝負側偏移’成為不可能實用 發生此現象可說^στ 由該氧空位產生自由+ ，、谷易產生氧空位， 然而，氧化鋅若由於贫為顯示η型傳導性之半導體。 鋅表面之費比# 八有表面犯階，壓低氧化 到達形成通道層之閘極絕緣層，化鋅内部擴散， 氧化辞高電阻化。在高=1為了排除自由電子， 荷之自由電子小，ί 之氧化辞’由於作為可動電 ν ’了排除此自由電子所需之閘極電壓㈣ 小，臨限值雷壓夕绍 甲』位电缓紜 態。Μ之、、讀值變小。此狀態為沒有保護層之狀 若將Α1203作為保護層賦予氧化辞的話 能階減少，此係可由第50次應用物 表面 .^ 0 予f相關聯合演講合 ,陶/3)之氧化辞與Al2〇3之整合性佳，缺陷能‘ >之報告理解。由於此表面位準減少，氧化鋅表面 能階回復到由氧化鋅原本具有之自由電子之濃度所決定2 位置，其結果1乏層往氧化鋅内部之擴散消除。因此， 乳化鋅顯示出原本之η型傳導性，成為低電阻化，亦 由電子多的狀態。為了排除此存在多數之自由電子 大的負閘極電壓’其結果’㉟限值電壓成為大的負值。而 圖16係表示A1203保護層有無所造成之氧化鋅之電阻率 之變化，I示由於Al2〇3保護層之賦予，氧化辞之電阻率 減少到約1/6400。此事項亦由上述機構所證明。 1243480 如上述，首次發現並論及關於將氧化辞用於 、成性層之場 效電晶體，由於保護層之賦予，作為電晶體之姓k 〜荷性大幅蠻 化° 於將氧化鋅使用於活性層之場效電晶體，由於氧化辞對 於氣氛之敏感性，保護層為不可或缺。然而，士 、 卻JL ，才皮 賦予保護層之場效電晶體，由於臨限值電壓成為大的負“ 壓，因此不能實際使用。 '
本發明係有鑑於上述問題而實現，其目的在於提供將氧 化鋅用於活性層，並且被賦予將活性層與氣氛隔絕之保護 層之可實際使用之半導體裝置，及具備其之電子裝置。叹 【發明内容】 & 本發明之半導體裝置包含：活性層，其係由zn〇或
MgxZni-x〇之多晶狀態、非晶狀態或混合存在多晶狀態及 非晶狀態之狀態之半導體所組成，添加^族、m族、^ 族、V族或VII族之元素者；及隔絕體，其係在前述活性層
之可動電荷移動之區域不受氣氛影響之範圍内，將前述活 性層由氣氛隔絕者。 ;上述構成^絕體只要將活性層由氣氛隔絕即可，不 僅疋保護層或絕緣層，含有電極等亦可。〖，活性層可全 (例二·賴電晶體之通道部分）不受氣氛影響之範圍内， ^ 」 右付合此，部分活性層由隔絕層露出於 氣氛亦無妨。 士此，藉由利用隔絕體，將對於氣氛敏感之ZnO或 93979 -10- 1243480 一 1x所、、且成之活性層從氣氛隔絕，可使半導體裝置 素特女疋化。又，藉由將I族、III族、IV族、V族或 之兀素添加於活性層，可減少由於保護層等之隔絕 * ’結果產生之活性層之可動電荷。此係由於形成保護層 寻，減少例如：ZnO之矣；处咖 之表面此階，解除空乏層往ZnO内部 心放ZnO成為顯不出原本之電阻值之^型半導體，自 由電子成為過剩狀態。例如：對於Ζη〇，ν族元素之氮係 作為党體雜質而作用，因此藉由氮之添加，過剩之自由電 子減少。又’ I族元素之氫在存在於Ζη〇之狀態下，對於作 為自由電子之來源之懸垂鍵係作為終端而作用，因此即使 藉由添加氫’過剩之自由電子仍減少。藉由此類自由電子 之減少’費米能階被壓低到能帶隙中央附近。藉此，用於 排除過剩之自由電子之閘極電壓下降，因此臨限值電壓上 昇。如此’可將作為電晶體之重要特性之一之臨限值電 壓’控制在可實際使用之電壓。 於前述半導體裝置，前述元素宜為氮 等中之2種以上。•由將此等元素添加於活性層，= 添加量，在較大範圍内，以良好精度控制臨限值電壓。 或者，於前述半導體裝置，前述元素宜為氮、磷、砷、 錄或此等中之2種以上及氫。藉由將此等元素添加於活性 層’能按照添加量’在較大範圍内’卩良好精度控制臨限 值電壓。又，於此半導體裝置之製造，在含有例如：氮、 一氧化二氮、一氧化氮或二氧化氮中之丨種以上，及水蒸 氣、過氧化氫、氨或此等中之1種以上之氣氛中，形成前 1243480 述活性層。藉此，氮及氫添加於所形成之活性層。 於前述半導體裝置，前述隔絕體宜由不同之隔絕層所組 成。例如：如前述，隔絕體只要將活性層從氣氛隔絕即 可，藉由從複數隔絕層組成，將絕緣層、電極、保護層等 作為隔絕層而包含之薄膜電晶體等，可容易適用於本發 明。 $ 於前述半導體裝置，前述隔絕層中之至少丨個宜由含有
Si〇2、Al2〇3、AIN、MgO、Ta205、Ti〇2、Zr02、stab_ Zr02、Ce〇2、K20、Li20、Na20、Rb2〇、In2〇3、La2〇3、
Sc2〇3、Y203、KNb03、KTa〇3、BaTi〇3、CaSn〇3、 CaZr03、CdSn03、SrHf03、SrSn〇3、SrTi〇3、YSc〇3、
CaHf03、MgCe03、Si:Ce03、BaCe03、SrZr03、BaZr03、
LiGa02、LiGa02i 混晶系（LiWx+y)NaxKy)(GaNzAlz)〇2 或此 專中之至少2種之固溶體所形成。此等材料與Zn〇及
MgxZn^xO之整合性良好，因此適於與活性層形成直接界 面之隔絕層。 於此半導體裝置’在連接於前述活性層之2個電極以 外，與前述活性層形成界面之前述隔絕層中，在形成將控 制前述活性層之可動電荷之移動之控制電極及前述活性層 之間絕緣之絕緣層及界面之區域以外，與前述活性層形成 界面之前述隔絕層宜由含有Si02、Al2〇3、AIN、MgO、
Ta2〇5、Ti〇2、Zr02、stab-Zr02、Ce02、K20、Li20、 Na20、Rb20、In2〇3、La203、Sc203、Y2〇3、KNb03、 KTa03、BaTi〇3、CaSn03、CaZr03、CdSn03、SrHf03、 93979 -12- 1243480
SrSn03、SrTi03、ysc〇3、CaHf〇3、MgCe〇3、SrCe〇3、 BaCe03、SrZr03、BaZr03、LiGa02、LiGa02 之混晶系 (LiHxwNaxKyXGabzAlJO^此等中之至少2種之固溶體所 形成。例如··於薄膜電晶體，連接於活性層之2個電極相 當於源極及汲極，控制電極相當於閘極。在相反參差型之 溥膜電晶體，於基板上形成閘極，並且於經由閘極絕緣層 (隔絶層）之其上，形成活性層。於此，在與閘極絕緣層形 成界面之區域以外，與活性層形成界面之隔絕層係形成在 與活性層之與出現在源極及汲極間之上端面及部分側端面 形成界面之隔絕層（相當於圖1(a)至（c)之保護層8)。於此半 導體#置，構成上係於必須之電極或絕緣層卩夕卜設置隔絕 層其係發揮作為將活性層由氣氛隔絕之保護層之角色 者，如前述，藉由Zn0及MgxZni_x〇之整合性良好之上述材 料，與活性層之上述區域形成直接界面之絕緣層，可使半 導體裝置之元件特性安定。 ，於前述半導體裝置，前述絕緣層t之至少i層宜由樹脂 $成。知用樹脂作為絕緣層’可在藉由樹脂形成絕緣層之 際，採用既有的樹脂形成裝置。因此，無需為了形成絕緣 層而使用複雜之成膜製程，可使半導體裝置之製造更容 易’因此可減低半導體裝置之製造成本。x，藉由使用樹 脂’可提升半導體裝置之柔軟性，特別適於採用可挽性基 板作為半導體裝置之基板之情況。 於此半導體裝置，在連接於前述活性層之2個電極以 外’與前述活性層形成界面之前述隔絕層中，在與將控制 93979 1243480 釗述活性層之可動電荷之移動之控制電極及前述活性層之 間絕緣之絕緣層形成界面之區域以外，與前述活性層形成 界面之前述隔絕層宜由樹脂形成。例如：於薄膜電晶體， 連接於活性層之2個電極相當於源極及汲極，控制電極相 當於閉極。在相反參差型之薄膜電晶體，如前述，在形成 閘極絶緣層及界面之區域以外，與活性層形成界面之隔絕 層係形成在與活性層之出現在源極及汲極間之上端面以及 部分側端面形成界面之隔絕層（相當於圖丨⑷至⑷之保護層 :。於此半導體裝置，構成上在必須之電極或絕緣層二 設置隔絕層，其係發揮作為將活性層由氣氛隔絕之保護層 之角色者，可於與活性層之上述區域形成直接界面之祕 層使用樹脂，因此如前述，可達成半導體裝置之製造成本 減低。 本么明之电子裝置具備前述任一半導體裝i，以作為探 關元件。如此，藉由具備將透明之如㈣❿…用於=
性層之性能良好之半導體裝置以作為開關元件，可容易揭 昇電子裝置之性能。 士於前述電子裝置’為了對於像素電極之圖像信號寫入或 項出1迷開關元件宜連接於像素電極。於作為電子裝置 之Γ矩陣型顯示裝置（例如：液晶顯示裝置或有機職 …），由驅動電路將圖像信號寫入像素電極之卜使 開啟_。又，於作為電子裝置之影像細等 類之圖㈣取裝置’讀出取人於像素電極之像抑於之 際，使開關元件開啟陶。如此，藉由在為了圖像顯：或 93979 -14- 1243480 圖像讀取之電子元件，將半導體裝置作為開關元件使用， 可容易達成此等電子裝置之高性能化。 如以上’本發明之半導體裝置包含：活性層，其係由 ZnO或MgxZn^xO之多晶狀態、非晶狀態或混合存在多晶狀 態及非晶狀態之狀態之半導體所組成，添加有I族、m 族、IV族、V族或VII族之元素者；及隔絕體，其係在前述 活性層之可動電荷移動之區域不受氣氛影響之範圍内，將 前述活性層由氣氛隔絕者。 如此，藉由利用隔絕體，將對於氣氛敏感之Ζη〇或 MgxZn^xO從氣氛隔絕，並且藉由將j族、m族、ιν族、ν 族或VII族之元素添加於ΖηΟ或MgxZru-xO，可減少由於隔 絕體而產生於活性層之可動電荷。藉此，可提供元件特性 安定’不受氣氛左右，並且採用可將臨限值電壓控制在可 實用範圍内之ZnO或MgxZn^xO之半導體裝置。 本發明進一步之其他目的、特徵及優異點，可藉由以下 所示記載而得知。又，本發明之利益藉由參考附圖之其次 說明而明白。 【實施方式】 以下，藉由實施例及比較例，進一步詳細說明本發明， 但本發明並未受到此等之任何限制。 [實施型態1] 關於本發明之第一實施型態，根據圖丨至圖5說明如下。 圖1 (a)係表示本貫施型悲之薄膜電晶體1之平面圖。又， 圖1(b)係表示圖1(a)之A-A線箭示剖面圖，圖〗（c)係表示為 93979 -15· 1243480 圖1(a)之B-B線箭示剖面圖。再者，於圖〗（a)，為了圖之巧 化，關於圖1(b)及圖1(c)所示之保護層8之表面中央部分之 凹凸’省略其記載。 如圖1(a)至圖l(c)所示，作為半導體裝置之薄膜電晶體i 係於形成在絕緣性基板2上之閘極3上，經由閘極絕緣層4 形成半導體層5，於此半導體層5上，形成作為電極部之源 極6及汲極7，並且形成覆蓋半導體層5、源極6及汲極7之 一部分之保護層8，形成相反參差型之構造。 又’此薄膜電晶體1用於顯示裝置（例如：實施型態4之 主動矩陣型液晶顯示裝置）時，汲極7連接於像素電極，或 者以透明導電膜一體形成汲極7及像素電極。因此，沒極7 之一部分係由保護層8拉出。 閘極絕緣層4係採用與ZnO及MgxZnNx〇之整合性良好之 含有 Si〇2、A1203、AIN、MgO、Ta205、Ti〇2、zr〇2、 stab-Zr〇2、Ce〇2、k2〇、Li2〇、Na2〇、Rb2〇、In2〇3、 La203、Sc203、Y2〇3、KNb03、KTa03、BaTi03、 CaSn03、CaZr03、CdSn03、SrHf03、SrSn03、SfTi03、 YSc03、CaHf03、MgCe03、SrCe03、BaCe03、SrZr〇3、
BaZr03、LiGa02、LiGa02之混晶系（LLo^NaxKyXGakAlz：^ 或此等中之至少2種之固溶體作為絕緣物而形成。又，閘 極絕緣層4亦可前述絕緣物層疊複數。例如：如圖2所示， 閘極絕緣層4係藉由第一絕緣層4a及第二絕緣層4b之2層層 疊所構成。於此構造，藉由採用與半導體層5之界面特性 良好之絕緣物（Al2〇3、AIN、MgO)形成第一絕緣層4a，以 93979 -16- 1243480 絕緣性良好之絕緣物（Si〇2)形成第二絕緣層4b，可於絕緣 性基板2上，獲得可靠度高之閘極絕緣層4。 作為活性層之半導體層5係採用添加I族、IH族、1 V族、 V族或VII族元素之ZnO或MgxZnbxO之多晶狀態、非晶狀 態或混合存在多晶狀態及非晶狀態之狀態之半導體所形 成。添加之元素宜是I族及V族元素。例如：半導體層5係 由含有氮（N)、磷（P)、砷（As)、銻（Sb)或此等元素之2種以 上之ZnO或MgxZni-χΟ之多晶狀態、非晶狀態或混合存在多 晶狀悲及非晶狀態之狀態之半導體所形成。 保護層8覆蓋半導體層5之形成有源極6及汲極7之部分 (兩電極6、7所覆蓋之部分）以外之部分，並且未與閘極絕 緣層4形成界面之部分（兩電極6、7間之部分及半導體層5 之周邊側端面）。此保護層8係採用含有Si02、Al2〇3、 AIN、MgO、Ta205、Ti02、Zr02、stab-Zr02、Ce02、 K20、Li20、Na20、Rb20、In2〇3、La203、Sc203、Y2〇3、 KNb03、KTa03、BaTi03、CaSn03、CaZr03、CdSn03、 SrHf03、SrSn03、SrTi03、YSc03、CaHf03、MgCe〇3、 SrCe03、BaCe03、SrZr03、BaZr〇3、LiGa02、LiGa〇2 之 /t匕晶系（Li丨_(x+y)NaxKy)(Ga丨-zAlz)〇2或此等中之至少2種之固 溶體所形成。 或者，保護層8亦可藉由丙烯酸等樹脂所形成。藉由以 树月曰形成保護層8，可採用既有之樹脂形成裝置。因此， 無需為了形成保護層8而採用複雜之成膜製程，可更容易 製造薄膜電晶體1，因此可減低薄膜電晶體丨之製造成本。 93979 -17- 1243480
又藉由使用樹脂，可提高薄膜電晶體1之柔軟性，特另I 適於採用可撓性基板作為絕緣性基板2之情況。 J 保4層8亦可前述絕緣物層疊複數。例如：如圖2所示 、 保痩層8係藉由第一保護層8a及第二保護層扑之2層層疊所 ， 成於此構造，藉由採用與半導體層5之界面特性良好 ^絕緣物（Al2〇3、A1N、Mg〇)形成第一保護層“，以^氣 沉之隔絕性良好之絕緣物（Si〇2)形成第二保護層朴，可誇 得可靠度高之保護層8。 & 於薄膜電晶體1，藉由閘極絕緣層4、源極6、汲極了及保 _ 護層§而形成隔絕體，分別形成隔絕層。 ” 在此，採用圖3(a)至圖3(e)之製造工序圖，說明如上述 構成之薄膜電晶體1之製造方法。 首先，於絕緣性基板2，藉由濺鍍，將Ta層疊3〇〇 ^^程 度之厚度，以作為閘極3之閘極材料，於其上以光微影工 序製作成特性形狀之光阻圖案。採用此光阻圖案，藉由 CF4+〇2氣體，於閘極材料施加乾蝕刻，形成圖案化成該 形狀之閘極3及連接於此之閘極配線（未圖示）（圖3⑷）。採 · 用玻璃基板、石英、塑膠等作為絕緣性基板2，除了化以 外，並使用A卜Cr等作為閘極材料。 其次，作為閘極絕緣層4，例如：#由脈衝雷射堆積 法，將Al2〇3層疊50〇 nm程度。八丨2〇3薄膜成膜時之基板溫 · 度為300 C ’成膜氣氛為減壓之氧氣氛，雷射功率為3.〇 J/cm，重複頻率為1〇 Hz^ 。在此，採用Abo;作為 閘極絕緣膜4之材料，但除此之外，亦可使用前述之絕緣 93979 -18- 1243480 物。 堆積Al2〇3之後，為了接著形成半導體層5，例如··藉由 脈衝雷射堆積法，將㈣氮之多晶狀態之ZnC^#5(/nm * 程度:此時之堆積條件為基板溫度3〇〇t，成膜氣氛為減 . 壓之氧及—氧化氮之混合氣氛，雷射功率為1.1 ;/em2，重 複頻率為10 Hz。藉由此方法，於Zn〇摻雜氮。在此係採用 一氧化氮作為氮來源，但其他亦可採用一氧化二氮、二氧 化氮、氨等含有氮之氣體。X，在此’採用Zn〇作為半導 體層5之材料，但亦可採用含有MgiZnWMgxhhOp 鲁 又，Zn〇或含有Mg之Zn0可為非晶狀態，還可為多晶狀態 及非晶狀態混合存在之狀態。 層璺成為半導體層5之Zn〇之後，以光微影法，將光阻 圖案形成特定形狀。採用此光阻圖案，藉由硝酸、醋酸等 進行濕蝕刻，從而獲得期望之形狀之半導體層5(圖3(c))。 接著，藉由濺鍍法，將A1成膜20〇 nm程度。而且，採用 光4〜及藉由CL氣體之乾姓刻，將該A〗層進行圖案化， 以便形成源極6及汲極7(圖3(d))。 ® 並且’藉由脈衝雷射堆積法，將Al2〇3成膜2〇〇 nm程 度。採用將該Al2〇3層藉由光微影所製作之特定光阻圖 案，藉由離子打薄機除去不要部分之Al2〇3，形成保護層 8，完成薄膜電晶體1(圖。在此，採用Al2〇3作為用於 保護層8之材料（絕緣物），但除其以外，採用前述之絕緣物 * 亦可。又，作為保護層8，亦可將前述之絕緣物層疊複 數0 93979 -19· 1243480 圖4係表示如上述所獲得之薄膜電晶體丨之^%特性。由 圖4可知，比較於採用未摻雜氮之Zn〇之薄膜電晶體形成 保護層時之Id-Vg特性（圖15以實線表示），其臨限值電壓 在〇 V附近。如此可知，於Zn〇摻雜氮而設置保護層8之薄 膜電晶體1，可將臨限值電壓〜控制在實用上沒有問題之 電塵。特別是藉由摻雜量，可將臨限值錢控制在負側至 + 10 v程度為止。 可如下理解藉由在Zn〇摻雜氮，以便控制臨限值電壓 Vth。由於保護層形成，Zn〇之表面能階減少，解除空乏層 在Zn〇内部擴散之能帶彎曲，成為顯示出ZnO原本所具有 之電阻值之η型半導體，自由電子成為過剩狀態。由於對 於ZnO，V私元素之氮係作為受體雜質而作用，因此藉由 摻雜氮，過剩之自由電子減少，費米能階壓低到能帶隙中 央附近。藉此，用以排除過剩之自由電子之閘極電壓降 低，因此臨限值電壓在0 V附近。 並且，關於其他V族元素之p、As*Sb，亦於例如：形 成上述半導體層5之情況，在基板溫度3〇(rc，成膜氣氛為 減壓之氧氣氛，於雷射功率1.1 J/cm2之條件下，將Zn2p3、
Zll2AS3、Zn2Sb3等含有V族元素之Zn化合物作為靶材使 用，進行摻雜，同樣可將臨限值電壓Vth控制在〇 v附近， 而且藉由摻雜量，亦可將臨限值電壓控制在負側至+1〇 V 程度為止，當然，以此方法將Ζη2%用於靶材而進行摻 雜’亦可與上述同樣地控制臨限值電壓Vth。 又’於ZnO或MgxZni_xO之多晶狀態、非晶狀態或混合存 93979 -20- 1243480 t多晶狀態及非晶狀態之狀態之半導體，摻雜[族、出 矢V知V奴或νπ族元素，亦可同樣控制臨限值電壓
Vth。 再者’於圖1(a)所示之構造，半導體層5全部覆蓋於保護 層8之下，但只要氣氛不影響薄臈電晶體1之半導體層5之 通道部分（載子（可動電荷）移動之區域）的話，半導體層5無 須全部由保護層8所覆蓋。例如：如圖5所示，於半導體層 5^通道寬度方向伸長地延伸，其兩端部由保護層8露出於 氣氛之構造，|兩端部受到氣氛影響，但只要兩端部分開 到通道部分不受該影響之程度的肖，如圖1⑷至圖1(c)所 示半導體層5之全部不被保護層8或閘極絕緣膜4覆蓋亦 "ojp 〇 [實施型態2] 關於本發明之第二實施型態，根據圖6至圖8說明如下。 圖6(a)係分別表示本實施型態之薄膜電晶體u之平面 圖。又，圖6(b)係表示圖6(a)iC_c線箭示剖面圖，圖6(c) 係表示為圖6(a)之D-D線箭示剖面圖。再者，於圖6(勾，為 了圖之簡化，關於圖6(b)及圖6(c)所示之保護層19之表面 中央部分之凹凸，省略其記載。 如圖6(a)至圖6(c)所示，作為半導體裝置之薄膜電晶體 π係於形成在絕緣性基板12上之底層絕緣層13上，源極14 及汲極15空下間隔而形成，於其等上，依序層疊半導體層 1 6、閘極絕緣層丨7及閘極丨8，並且形成覆蓋半導體層16、 閘極絕緣層17及閘極1 8之保護層丨9，形成參差型之構造。 -21 - 1243480 於此此薄膜電晶體丨丨，半導體層丨6、閘極絕緣層17及閘極 18係圖案化成相同形狀（圖6(a)所示之半導體層μ之形狀） 而層疊。 又此薄膜電晶體11用於顯示裝置（例如：實施型態4之 主動矩陣型液晶顯示裝置）時，汲極15連接於像素電極， 或者以透明導電膜一體形成汲極丨5及像素電極。 底層絕緣層13係採用作為絕緣物之含有Si〇2、Al2〇3、 AIN、MgO、Ta205、Ti〇2、Zr02、stab-Zr02、Ce02、 K20、Li2〇、Na2〇、Rb2〇、In2〇3、La2〇3、以2〇3、γ2…、 KNb03、KTa03、BaTi03、CaSn03、CaZr03、CdSn03、 SrHf03、SrSn〇3、SrTi03、YSc〇3、CaHf〇3、MgCe〇3、 SrCe03、BaCe03、SrZr〇3、BaZr〇3、UGa〇2、LiGa〇2之 晶系（Lii^+wNaxKyXGabzAlJC^或此等中之至少2種之固 溶體而形成。又，此底層絕緣層13形成與半導體層16之下 端面之形成與源極14及汲極15之界面之區域以外之區域之 界面。 或者’底層絕緣層13亦可藉由丙烯酸等樹脂所形成。藉 由以樹脂形成底層絕緣層13，可採用既有之樹脂形成裝 置。因此’無需為了形成底層絕緣層丨3而採用複雜之成膜 製程，可更容易製造薄膜電晶體丨丨，因此可減低薄膜電晶 體Π之製造成本。又，藉由使用樹脂，可提高薄膜電晶體 11之柔軟性’特別適於採用可撓性基板作為絕緣性基板12 之情況。 又，底層絕緣層13亦可前述絕緣物層疊複數。例如：如 93979 -22- 1243480 圖7所示，底層絕緣層13係藉由第一絕緣層ua及第二絕緣 層⑽之2層層疊所構成。於此構造，藉由採用與絕緣性基 板12之界面特性良好之絕緣物（Si〇2)形成第—絕緣層⑴， 以與半導體層16之界面特性良好之絕緣物（μ处、細、
MgO)形成弟^一絕緣層13b，可於p給甘 j於絶緣性基板12上，獲得可 靠度高之底層絕緣層13。 再者’由玻璃或石冑形成絕緣性基板12時，即使不形成 底層絕緣層13，半導體層16由含有玻璃或石英成分之以〇2 或含有Si〇2之絕緣物所覆蓋，與氣氛隔絕。 作為活性層之半導體層16係採用添加〗族、m族、ιν 族、V族或VII族元素之ZnO或MgxZnkO之多晶狀態、非 晶狀怨或混合存在多晶狀態及非晶狀態之狀態之半導體所 形成。添加之元素宜是I族及V族元素。例如：半導體層16 係由含有氮、鱗、神、銻或此等元素之2種以上之Zn〇或 MgxZnNxO之多晶狀態、非晶狀態或混合存在多晶狀態及 非晶狀態之狀態之半導體所形成。 閘極絕緣層17係與半導體層16形成界面，採用作為絕緣 物之含有 Si02、Al2〇3、AIN、MgO、Ta205、Ti02、 Zr02、stab_Zr02、Ce02、K20、Li20、Na20、Rb20、 ln203、La203、Sc203、Y2〇3、KNb03、KTa03、BaTi03、 CaSn03、CaZr03、CdSn03、SrHf03、SrSn03、SrTi03、 YSc〇3、CaHf03、MgCe03、SrCe03、BaCe03、SrZr03、 BaZr〇3、LiGa〇2、LiGa〇2 之混晶糸（Lii_(x+y)NaxKy)(Gai· ZA1Z)02或此等中之至少2種之固溶體而形成。又，閘極絕 93979 -23- 1243480 緣層17亦可前述絕緣物層疊複數。例如：如圖7所示，閑 極絕緣層17係藉由第一絕緣層17a及第二絕緣層17b之2層 層疊所構成。於此構造，藉由採用與半導體層16之界面特 性良好之絕緣物（Al2〇3、AIN、MgO)形成第一絕緣層 17a，以絕緣性良好之絕緣物（si〇2)形成第二絕緣層17b， 可於半導體層16與閘極18之間，獲得可靠度高之閘極絕緣 層17。 保屢層19係以覆蓋層豐之半導體層16、閘極絕緣層17及 閘極1 8之方式，採用作為絕緣物之含有si〇2、ai2〇3、
AIN、MgO、Ta205、Ti02、Zr02、stab-Zr02、Ce02、 K20、Li2〇、Na20、Rb2〇、ln2〇3、La2〇3、Sc203、Y2〇3、 KNb03、KTa03、BaTi03、CaSn03、CaZr03、CdSn03、 SrHf03、SrSn03、SrTi〇3、YSc03、CaHf03、MgCe03、 SrCe03、BaCe03、SrZr03、BaZr03、LiGa02、LiGaOA /心晶系（1^1七”)^\^)(〇&1_2八12)〇2或此等中之至少2種之固 溶體所形成。 或者’保護層19亦可與底層絕緣層丨3相同，藉由丙烯酸 等樹脂所形成。藉此，具有與採用樹脂形成底層絕緣層13 之情況相同之優點。 保瘦層19之側壁部特別是覆蓋與底層絕緣層丨3、源極J 4 及汲極15形成界面之半導體層16之下端面，以及與閘極絕 緣層17形成界面之半導體層16之上端面以外之側端面。 又’保護層19亦可前述絕緣物層疊複數。例如··如圖7所 示，保護層19係藉由第一保護層i9a及第二保護層1讣之2 93979 -24- 1243480 層s且斤構成。於此構造，藉由採用與半導體層i 6之界面 特=之絕緣物（A1办、A1N、Mg〇)形成第_保護層 19a彳贫乳坑之隔絕性良好之絕緣物（si〇2)形成第二保護 層19b可獲得可靠度高之保護層1 &。 於薄《電晶體U，藉由底層絕緣層13、源極14、汲極 15、閘極絕緣層17及保護層19而形成隔絕體"分別形成隔 絕層。 在此，採用圖8⑷至圖8⑷之製造工序圖，說明如上述 構成之薄膜電晶體U之製造方法。 育先，於絕緣性基板12，藉由脈衝雷射堆積法，將 Al2〇3層邊1〇〇 nm程度之厚度，作為底層絕緣層13(圖 8(a))。堆積條件為堆積時基板溫度則。c，成膜氣氛為減 壓之氧氣氛，雷射功率為3·〇 J/cm2,重複頻率為ι〇 Hz。 在此，採用Ai2〇3作為底層絕緣層13之材料，但除此之 外’亦可使用前述之絕緣物。 接著，於底層絕緣層13上，藉由濺鍍法等，將ai堆積 150 度’而且藉由光微影，採關案化成特定形狀之 光阻，以乾㈣除m層之不要部分。藉此，形成源極14 及汲極15(圖8(b))。 、接著，為了形成半導體層16，例如：藉由脈衝雷射堆積 將摻雜氮之多晶狀恶之Zn〇層疊5〇 nm程度。此時之 堆積條件為基板溫度30(rc ’成膜氣氛為減壓之氧及一氧 化氮之混合氣氛’雷射功率為M J/cm2，重複頻率為10 Hz。藉由此方法，於ZnO摻雜氮。在此係採用一氧化氮作 93979 -25- 1243480 氧化二氮、二氧化氮、氨等 採用N作為摻雜於ZnO之雜 為氮來源’但其他亦可採用一 含有氮之氣體。又，在此， 質’但其他亦可採用p、As、Sb。並且，在此採用Zn〇作 為半導體層i 6之材料，但亦可採用含有吨之Zn〇(MgxZni χ〇)。 又’ ZnO或含有MgiZn〇亦可為非晶狀態或多晶狀態及非 晶狀態混合存在之狀態。
堆積半V體層16之後，接著形成閘極絕緣層丨7。藉由例 如脈衝田射堆積法，將Al2〇3層疊5〇〇 nm程度，以作為 閘極、吧緣層17。Al2〇3薄膜之成膜時條件為基板溫度3〇〇 C，成膜氣氛為減壓之氧氣氛，雷射功率為3 〇 ，重 稷頻率為10 Hz。在此，使用Μ"3作為閘極絕緣層17之材 料，但除其以外，使用前述之絕緣物亦可。
其後，藉由濺鍍法等，將A1堆積2〇() nm程度以作為閘極 18。而且藉由光微影，採用圖案化成特定形狀之光阻，以 離子打薄機等除去A1層、閘極絕緣層17及半導體層16之不 要部分，藉此在半導體層16及閘極絕緣層丨7上，形成閘極 18(圖8(c))。在此，閘極μ、閘極絕緣層17及半導體層16 之側端面係對於絕緣性基板12之上端面垂直，但為了改善 保護層19之覆蓋性，由閘極18朝半導體層16側擴散之順斜 坡狀亦可。 最後，層疊保護層19。保護層19係例如：藉由脈衝雷射 堆積法，將Ah〇3成膜200 nm程度。成膜條件為基板溫度 3〇〇 °C ，成膜氣氛為減壓之氧氣氛，雷射功率為3 〇 J/cm2，重複頻率為1〇 &。其後，藉由光微影，採用特定 93979 -26- 1243480 〃 乂離子打薄機等除去不要部分之Al2〇3，形成 保護層19，6 士 — 70成缚膜電晶體11(圖8(d))。在此，採用ai2〇3 為保濩層19之材料，但採用Si〇2、AIN、MgO、Ta205、
Al2〇3或加入此等中之至少2種之固溶體亦可。 5 如上述所獲得之薄膜電晶體11之Id-Vg特性係與圖4所示 特性相同’其臨限值電壓^在〇 v附近。如此，於薄臈電 晶體11 ’藉由將氮摻雜於ΖηΟ之半導體形成半導體層16， 可將臨限值電壓Vth控制在實用上沒有問題之電壓。
並且，關於其他¥族元素之P、As或Sb，藉由如實施型 態1所述進行摻雜，同樣可將臨限值電MVth控制在〇 μ 近。 又於ΖηΟ或MgxZni.x〇之多晶狀態、非晶狀態或混合存 在多晶狀態及非晶狀態之狀態之半導體，摻雜〗族、出 族' IV族或VII族元素’亦可同樣控制臨限值電壓
再者，於圖6⑷至圖6(c)所示之構造，半導體層16全部 覆蓋於底層絕緣層13、源極14、沒極15、問極絕緣膜”及 保護層19之下，但只要氣氛不影響薄臈電晶體此半導體 層16之通道部分（載子移動之區域）的話，半導體㈣無須 全部覆蓋。例如：如圖6⑷之2點短劃線所示，於半導體層 16、與半導體層16相同形狀之閘極絕緣㈣及閑極18朝通 道寬度方向伸長地延伸，其兩端邱士 # 4 ^ 鳊#由保護層19露出於氣氛 話，不覆蓋半導體層16之全部亦可。 之構造，位於其兩端部之半導體層16之側端面受到氣氛影 響，但只要兩端部分開到通道部分不受該影響之程度的 93979 -27- 1243480 [實施型態3] 關於本發明之第三實施型態，根據圖9至圖u說明如 下。 圖9⑷係分別表示本實施型態之薄膜電晶體21之平面 圖。又，圖9⑻係表示圖9⑷之E_E線箭示剖面圖，圖9⑷ 係表示為圖9(a)之F-F線箭示剖面圖。 如圖9⑷至圖9⑷所示’作為半導體裝置之薄膜電晶體 ㈣於形成在絕緣性基板22上之底層絕緣層23上，形成源
極24及沒極25,於其上形成半導體層％、第一閘極絕緣層 27。此半導體層26及第一閘極絕緣層27係以第二閘極絕緣 層28覆蓋，第二閘極絕緣層28亦兼作半導體層％之保護 層。閘極29形成於第二間極絕緣層28上，形成薄膜電晶體 2卜
又，此薄膜電晶體21用於顯示裝置（例如：實施型態4之 主動矩陣型液晶顯示裝置）時，汲極25連接於像素電極， 或者以透明導電膜一體形成汲極25及像素電極。 底層絕緣層23係採用作為絕緣物之含有si〇2、Al2〇3、 AIN、MgO、Ta2〇5、Ti02、Zr〇2、stab_Zr〇2、Ce〇2、 K20、Li20、Na20、Rb20、In2〇3、La2〇3、Sc2〇3、Y203、 KNb03、KTa03、BaTi03、CaSn03、CaZr03、CdSn03、 SrHf03、SrSn03、SrTi03、YSc03、CaHf03、MgCe03、 SrCe03、BaCe03、SrZr03、BaZr03、LiGa02、LiGa02 之 '作匕日日糸（Lii_(x+y)NaxKy)(Gai_zAlz)〇2或此等中之至少2種之固 溶體而形成。 93979 -28· 1243480 或者，底層絕緣層23亦可藉由丙烯酸等樹脂所形成。藉 由以樹脂形成底層絕緣層23，可採用既有之樹脂形成裝 置。因此’無需為了形成底層絕緣層23而採用複雜之成膜 製程’可更容易製造薄膜電晶體21，因此可減低薄膜電晶 體21之製造成本。又，藉由使用樹脂，可提高薄膜電晶體 21之柔軟性，特別適於採用可撓性基板作為絕緣性基板22 之情況。 又，此底層絕緣層23係與半導體層26之下端面之源極24 及汲極25形成界面之區域以外之區域形成界面。又，底層 絕緣層23亦可前述絕緣物層疊複數。例如：如圖丨〇所示， 底層絕緣層23係藉由第一絕緣層23a及第二絕緣層23b之2 層層疊所構成。於此構造，藉由採用與絕緣性基板22之界 面特性良好之絕緣物（Si〇2)形成第一絕緣層23a，以與半導 體層26之界面特性良好之絕緣物（A12〇3、a1n、Mg〇)形成 第二絕緣層23b，可於絕緣性基板22上，獲得可靠度高之 底層絕緣層23。 再者，由玻璃或石英形成絕緣性基板22時，即使不形成 底層絕緣層23，半導體層26由含有玻璃或石英成分之Si〇2 或含有SiOz之絕緣物所覆蓋，與氣氛隔絕。 半導體層26係採用添加I族、ΙΠ族、Iv族、v族或νπ族 元素之ΖηΟ或MgxZnNx〇之多晶狀態、非晶狀態或混合存在 多晶狀態及非晶狀態之狀態之半導體所形成。添加之元素 宜是I族及V族元素。例如··半導體層26係由含有氮、磷、 砷、銻或此等兀素之2種以上之ZnO或MgxZnhO之多晶狀 93979 -29- 1243480 態、非晶狀態或混合存在多晶狀態及非晶狀態之狀態之半 導體所形成。 第一閘極絕緣層27係與半導體層26形成界面，採用作為 絕緣物之含有 Si〇2、Al2〇3、AIN、MgO、Ta2〇5、Ti〇2、 Zr02、stab-Zr02、Ce02、K20、Li20、Na20、Rb20、 I112O3、La2〇3、SC2O3、Y2O3、KNb〇3、KTa〇3、BaTi〇3、 CaSn03、CaZr03、CdSn03、SrHf03、SrSn03、SrTi03、 YSc03、CaHf03、MgCe03、SrCe03、BaCe03、SrZr03、 BaZr〇3、LiGa〇2、LiGa〇2 之混晶糸（Lii_(x+y)NaxKy)(Gai_ ZA1Z)02或此等中之至少2種之固溶體而形成。又，第一閘 極絕緣層27亦可前述絕緣物層疊複數。例如：如圖10所 示，閘極絕緣層27係藉由第一絕緣層27a及第二絕緣層27b 之2層層疊所構成。於此構造，藉由採用與半導體層26之 界面特性良好之絕緣物（Al2〇3、AIN、MgO)形成第一絕緣 層27a，以絕緣性良好之絕緣物（Si02)形成第二絕緣層 27b，可於半導體層26與第二閘極28之間，獲得可靠度高 之閘極絕緣層27。 第二閘極絕緣層28係以覆蓋層疊之半導體層26及第一閘 極絕緣層27之方式，採用作為絕緣物之含有Si02、 Al2〇3、AIN、MgO、Ta2〇5、Ti〇2、Zr〇2、stab-Zr〇2、 Ce〇2、K2O、Li^O、Na2〇、Rb2〇、I112O3、La2〇3、SC2O3、 Y2〇3、KNb03、KTa03、BaTi03、CaSn03、CaZr03、 CdSn03、SrHf03、SrSn03、SrTi03、YSc03、CaHf03、 MgCe03、SrCe03、BaCe03、SrZr03、BaZr03、LiGa02、 93979 -30- 1243480
LiGa〇2之混晶系（Lii a+wNaxKAGai zA1z)〇2或此等中之至 少2種之固溶體所形成。 或者’第二閘極絕緣層28亦可與底層絕緣層23相同，藉 由丙烯酸等樹脂所形成。藉此，具有與採用樹脂形成底層 絕緣層23之情況相同之優點。 第二閑極絕緣層28之側壁部特別是覆蓋與底層絕緣層 23、源極24及汲極25形成界面之半導體層26之下端面，以 及與第一閘極絕緣層27形成界面之半導體層26之上端面以 外之側端面。如此，第二閘極絕緣層28發揮在閘極29下側 覆蓋半導體層26之側端面之保護層之角色，並且為了與第 一問極絕緣層27確保作為閘極絕緣層之充分厚度而設置。 又’第二閘極絕緣層28亦可前述絕緣物層疊複數。例 如·如圖1 〇所示，第二閘極絕緣層28係藉由下部絕緣層 28a及上部絕緣層28b之2層層疊所構成。於此構造，藉由 採用與半導體層26之界面特性良好之絕緣物（ai2o3、 AIN、Mg〇)形成第一絕緣層28a，以隔絕性良好之絕緣物 (Si〇2)形成第二絕緣層28b，在第一閘極絕緣層27與閘極29 之間，可獲得可靠度高之第二閘極絕緣層28。 於薄膜電晶體21，藉由底層絕緣層23、源極24、汲極25 及第一閘極絕緣層27及第二閘極絕緣層28而形成隔絕體， 分別形成隔絕層。 在此，採用圖11 (a)至圖11 (d)之製造工序圖，說明如上 述構成之薄膜電晶體21之製造方法。 首先，於絕緣性基板12，例如：藉由脈衝雷射堆積法， 1243480 將Ah〇3層疊100 nm程度之厚度（圖叫)）。堆積條件為基 板溫度3啊，成膜氣氛為減摩之氧氣氛，雷射功率為 J/Cm ’重複頻率為10 Hz。在此，採用αι203作為底層絕緣 層此材料，但除此之外，亦可使用前述之絕緣物。 接著於底層絶緣層23上，藉由賤錄法等，將A1堆積 15〇 η喊度’而且藉由光微影，採用圖案化成特㈣狀之 光阻，以乾㈣除去不要部分，形成祕24及汲極 11(b)) 〇 '接者’為了形成半導體層26 ’例如：藉由脈衝雷射堆積 法，將掺雜氮之多晶狀態之Zn0層疊50 程度。此時之 堆積條件為基板溫度，成膜氣氛為減壓之氧及一氧 化氮之混合氣氛，雷射功率為U細2，重複頻率為10
Hz。藉由此方法，於Zn〇摻雜氮。在此係採用一氧化氮作 為氮來源，但其他亦可採用—氧化二氮、二氧化氮、氨等 含有氮之氣體。又’在此，採用N作為摻雜於Zn〇之雜 質，但其他亦可採用p、As、Sb。並且，在此採用Zn〇作為半 導體層26之材料’但亦可採用含有Mg2Zn〇(Mgn 又，ZnQ或含#Mg之Zn〇可為非晶㈣，料為多晶狀態 及非晶狀態混合存在之狀態。 堆積半導體層26之後’接著形成第一閘極絕緣層27。藉 由例如：脈衝雷射堆積法，將A12〇3層疊5〇 nm程度，以^ 為第-閘極絕緣層27。Al2〇3薄膜之成膜時條件為基板溫 度3〇〇 °C，成膜氣氛為減壓之氧氣氛，雷射功率為3.0 J/cm，重稷頻率為10 Hz。在此’使用Al2〇3作為第一閑極 93979 -32- 1243480 、、、巴緣層2 7之材料，但除其以外，使用前述之絕緣物亦可。 又，作為第一閘極絕緣層27，亦可前述絕緣物層疊複數。 其後，藉由光微影，採用圖案化成特定形狀之光阻，以 離子打薄機等除去不要部分，以便形成第一閘極絕緣層U 及半導體層26(圖11(〇)。在此，第一閘極絕緣層27及=導 體層26之側端面係對於絕緣性基板22之上端面垂直，但為 了改善第二閘極絕緣層28之覆蓋性，由第一問極絕緣層W 朝半導體層26側擴散之順斜坡狀亦可。 接著，層豐第二閘極絕緣層28。藉由例如··脈衝雷射堆 積法’將Ai2〇3成膜45〇 nm程度，以作為第二閘極絕緣層 2/。成膜條件為基板溫度3〇(rc，成膜氣氛為減壓之氧氣 風’雷射功率為3.〇 J/cm2，重複頻率為i〇 Hz。在此，使 用ai2o3作為第二閘極絕緣層28之材料，但除其以外，使 用前述之絕緣物亦可。χ，作為第二閘極絕緣㈣，亦可 前述絕緣物層疊複數。 其後，Α 了形成閘極29,藉由⑽法等，將^等層叠 200 nm程度。而且，藉由光微影，採用圖案化成特定形狀鲁 之光阻，以離子打薄機等除去閘極29及第二閘極絕緣層28 之不要部分，從而完成薄膜電晶體21 (圖11⑷)。 述所獲彳寸之薄膜電晶體21之1d-Vg特性係與圖4所示 特性相同臨限值電壓Vth在〇 V附近。如此，於_ · 晶體21 由將氮摻雜於Zn〇之半導體形成半導體層％， · 可將臨限值電壓Vth控制在實用上沒有問題之電壓。 並且，關於其他¥族元素之卜As或Sb，藉由如實施型 93979 -33- 1243480 癌1所述進行摻雜，同樣可將臨限值電壓〜控制在〇 乂附 近。 〇 ’於ZnO或MgxZnix〇之多晶狀態、非晶狀態或混合存 一 ^多晶狀態及非晶狀態之狀態之半導體，播雜1族、πι ， V私V私或νπ族元素，亦可同樣控制臨限值電壓
Vth 〇 再者’於圖9(a)至圖9(C)所示之構造，帛導體層26全部 覆蓋=底層絕緣層23、源極24、汲極25、第一閘極絕緣膜 27及：二閘極絕緣層28，但只要氣氛不影響薄膜電晶體^ · 之半V體層26之通道部分（載子移動之區域）的話，半導體 層2酋6無須全部覆蓋。例如：如圖9(a)之2點短劃線所示，於 半V體層26及第-閘極絕緣層27朝通道寬度方向伸長地延 伸，其兩端部由第二閘極絕緣層28露出於氣氛之構造，位 於其兩端部之半導體層26之側端面受到氣氛影響，但只要 兩端部分開到通道部分不受該影響之程度的話，不覆蓋半 導體層26之全部亦可。 [實施型態4] # 關於本發明之第四實施型態，根據圖丨、圖2、圖3、圖 5、圖6、圖7、圖9、圖1〇、圖π及圖18說明如下。再者， 於本實施型態，關於與前述實施型態丨至3之構成要素具有 同等機能之構成要素，標示相同符號，並省略其說明。 如圖1(a)至圖l(c)所示，於薄膜電晶體1形成半導體層 - 105，以取代半導體層5。與半導體層5相同，作為活性層 之半導體層105係採用添加〗族、m族、Iv族、v族或γη族 93979 -34- 1243480 元素之ZnO或MgxZni_xO之多晶狀態、非晶狀態或混合存在 多晶狀態及非晶狀態之狀態之半導體所形成。添加之元素 宜是I族及V族元素。例如··半導體層1〇5係由含有氮（N)、 磷（P)、砷（As)、銻（Sb)或此等元素之2種以上及氫（H)之 ZnO或MgxZn^xO之多晶狀恕、非晶狀態或混合存在多晶狀 悲及非晶狀態之狀態之半導體所形成。 於如此構成之薄膜電晶體1之製造，如同以下所說明， 半導體層105之製造工序與半導體層5之前述製造構成不 同。如圖3(b)所示，堆積Al2〇3作為閘極絕緣層4之後，為 了接著形成半導體層105 ’例如：藉由脈衝雷射堆積法， 將摻雜氮及氫之多晶狀態之ZnO層疊50 nm程度。此時之 堆積條件為基板溫度200 C ’成膜氣氛為氮氣體及水蒸氣 之混合氣氛，雷射功率為1.1 J/cm2，重複頻率為1〇 Hz。 藉由此方法，氮及氫摻雜於ZnO。 在此’使用氮氣體作為氮來源，但其他亦可使用一氧化 二氮、一氧化氮、二氧化氮等含有氮之氣體。又，在此， 使用水蒸氣作為氫來源，但其他亦可使用過氧化氫等含有 氣之氣體，並且亦可使用氨等由氮及氫所組成之氣體。採 用此類氣體時，可不需要氮來源。或者，亦可使用水蒸 氣、過氧化氫或氨中之複數種氣體作為氫來源。又，在 此，於半導體層105使用ZnO為例，但採用含有Mg之 ZnO(MgxZnKx〇)亦可。又，ZnO或含有Mg之ZnO可為非晶 狀態或多晶狀態及非晶狀態混合存在之狀態。 於圖17表示如上述所獲得之薄膜電晶體特性。 93979 -35- 1243480 由圖1 7可知，比較於採用未摻雜氮及氫之之薄膜電晶 =成保護層時之Id_V#性（圖15以實線表示），其臨限值 電壓vth在ο V附近。如此可知，於Zn〇接雜氮及氨而設置 保濩層8之薄膜電晶體丨，可將臨限值電壓Vth控制在實用 上沒有問題之電屢。 …可如下理解藉由在ZnO摻雜氮及氫，以便控制臨限值電 壓vth。由於保護層形成，解除表面空乏層，z⑽成為自由 電:過剩狀態。由於對於Zn〇,〜矣元素之氮係作為受體 雜貝而作用’因此藉由摻雜氮，過剩之自由電子減少。I 族之氫在存在於Zn0之狀態下，對於作為自由電子之來源 之懸垂鍵係作為終端而作用，因此即使藉由添加氯，過剩 由電子仍減少。藉由摻雜氮及氫，費米能階被壓低到 能帶隙中央附近，藉此，用於排除過剩之自由電子之閘極 電壓變小，因此臨限值電壓在〇 V附近。 又，如圖18所示，藉由摻雜氫，可控制對於正閘極電壓 之TFT特性之經時劣化（臨限值電壓之正偏移AVth)。具體 而言，若源極及汲極之電位作為接地電位，於閘極施加 + 30 V之電壓，觀測臨限值電壓之經時變化，相較於在 + NO氣氛成膜之TFT，確認在H2〇+N2成膜之打丁可控制 臨限值電壓之偏移量。 並且關於其他V族元素P、^或讥，在例如：層疊上述 半導體層105之情況，於基板溫度戰，成膜氣氛為減壓 之水瘵氣氣氛，雷射功率丨.i j/cm2之條件下，將、 ZhAh、znjb3等含有v族之以化合物用於靶材，進行摻 93979 -36- 1243480 雜，可同樣將臨限值電壓vth控制在〇 v附近。當然，以此 方法，將ZhN3用於輕材而進行摻雜，亦可與上述同樣地 控制臨限值電壓Vth。 再者，於圖5之半導體層5、圖6所示之薄膜電晶體^之 半導體層16、圖7之半導體層16、圖9所示之薄膜電晶體21 之半導體層26、圖1〇之半導體層26使用含有氮（N)、磷 (P)、石申（As)、銻（Sb)或此等元素之2種以上之Zn〇或 MgxZiM-χΟ之多晶狀態、非晶狀態或混合存在多晶狀態及 非晶狀態之狀態之半導體，由同樣效果，亦可將臨限值電 壓Vth控制在〇 V附近。 [實施型態5] 關於本發明之實施型態5，根據圖12及圖丨3說明如下。 再者，於本實施型態，關於與前述實施型態1至4之構成要 素具有同等機能之構成要素，標示相同符號，並省略其說 明。 如圖12所示，本實施型態之顯示裝置為主動矩陣型液晶 顯示裝置，具備像素陣列31、源極驅動器32、閘極驅動器 33、控制電路34及電源電路35。 像素陣列31、源極驅動器32、閘極驅動器33形成於基板 36上。基板36係藉由如同玻璃之具有絕緣性及透光性之材 料所形成。像素陣列3丨具有源極線SL…、閘極線…及 像素37···。 於像素陣列31，多數閘極線GLj、GLj + i…及多數源極線 SLl ···係在交叉狀態下配置，在鄰接之2條閘極線 93979 -37- 1243480 GL、GL與連接之2條源極線sl、SL包圍之部分，配置有 像素（圖中以PIX表示）37。如此，像素37…係於像素陣列 31内，配置成矩陣狀，每1行分配到1條源極線sl，每1列 分配到1條閘極線GL。 液晶顯示裔之情況，如圖丨3所示，各像素37係藉由開關 元件之電晶體τ及具有液晶電容匕之像素電容Cp所構成。 一般而言，主動矩陣型液晶顯示器之像素電容（^為了使顯 示安定，具有與液晶電容cL並行附加之輔助電容Cs。為了 將液晶電容CL或電晶體T之漏電流、電晶體τ之閘極•源極 間電容、像素電極•信號線間電容等寄生電容所造成之像 素電位變動、液晶電容Cl之顯示資料依存性等之影響抑制 在最小限度，輔助電容cs為必須。 電晶體τ之閘極連接在閘極線GLj。又，液晶電容Cl及辅 助電容cs之一方電極係經由電晶體τ之汲極及源極，連接 於源極線SLj。連接於汲極之液晶電容匕之電極形成像素 電極37a。液晶電容匕之另一方電極隔著液晶胞，連接於 對向電極，辅助電容Cs之另一方電極連接於全像素共同之 未圖不之共同電極線（Cs on Common構造之情況），或連接 於鄰接之閘極線GL(Cs on Gate構造之情況）。 多數閘極線GL」·、GLj + 1…連接於閘極驅動器33，多數資 料信號線SL、SL1+1…連接於源極驅動器32。又，閘極驅 動裔33及源極驅動器32分別藉由不同之電源電壓Vgh、v 及電源電壓VSH、VSL所驅動。 源極驅動器32係根據來自來自控制電路34之同步信號 93979 -38- 1243480 CKS及開始脈衝SPS，將控制電路34所賊不 、τ之圖像信號 DAT取樣，輸出給連接於各行像素 〜你極線SLi、 SL1+1…。閘極驅動器33根據來自控制電路34 ^ 同步信號 CKG · GPS及開始脈衝SPG，產生給予造姑 逆接於各列像素 37…之閘極線GLj、GLj + 1…之閘極信號。 電源電路35係產生電源電壓vSH、VSL、Vru、v GH vgl、接地 電位COM及電壓Vbb之電路。電源電壓v S L马为別位
準不同之電壓，並給予源極驅動器32。電源電壓V 从 V gh Vgl 為/刀別位準不同之電壓，並給予閘極驅動器33。接地電位 COM係給予設置在基板36之未圖示之共同電極線。 電晶體T若藉由從閘極驅動器33經由閘極線GLj所給予之 閘極信號而開啟’將由源極驅動器32經由源極線认…所給 予之圖像信號，寫入像素37(像素電極37幻。又，電晶體τ 為前述實施型態丨至4之薄膜電晶體丨、u、21(參Μ考圖 ⑷圖6(a)、圖9(a))。如前述，薄膜電晶體j、u、21可 將限值電壓Vth控制在實用上沒有問題之電Μ，因此如 上述適用於液晶顯示裝置時，由於適當之臨限值電壓為 〇 3 V私度’目此藉由摻雜量，可設定最適臨限值電壓。 此薄膜電晶體丨、丨丨、2丨在實用上可沒有問題地用 於驅動像素37之電晶體丁。 於構成源極驅動器32及閘極驅動器33之電路元件中 之：電晶體所構成之電路，前述薄膜電晶體卜u、2H 在^用ί沒有問題地作為各電晶體使用。 又，藉由以相同電晶體1、11、21構成像素37之電晶體Τ 93979 •39- 1243480 及驅動電路之電晶體’可於同一基板36上，採 同時製作此等電晶體。因此，削減矩陣型顯示裝置之i: 工序，因此可達成矩陣型顯示裝置之低成本化。^ 如以上’即使採用薄膜電晶體卜1卜川乍為像素37用 之電晶體Τ及驅動電路用之兩曰辦 电路用之电日日體，仍可適當控制臨限 值，因此可提供動作安定之矩陣型，顯示裝置。 以上’關於本實施型態及前述其他實施型態舉出數例， 但本發明不限於上述各實施型態，適用於根據 所有構成。 心t 例如··於實施型態U4係例示薄膜電晶體i、u、21， 但於將Zn〇或MgxZni_x〇使用於活性層，並且被賦予保護層 之構造：若是同樣於Zn0摻雜氮之構成的話，於卯接合二 極體、蕭特基二極體、雙極電晶體、蕭特基障壁場效電晶 體、接合型場效電晶體等，亦可適用本發明。 曰 又’於實施型態5，例示作為電子裝置之主動矩陣型液 晶顯示裳置，但關於其他裝置’例如：有機虹顯示裝置或 可撓性顯示裝置，若同樣將薄膜電晶體1、U、21作為開 關元件使用的話，亦可適用本發明。 亚且，作為可適用本發明之顯示裝置以外之電子裝置， 可舉例將薄膜電晶體i、U、21作為影像讀出用開關元件 使用之線型影像掃描器、矩陣型影像掃描器、乂線影像掃 2器等。於此類影像掃描器，為·了讀出儲存於電荷儲存電 容之電荷，以賦予閘極線之閘極電壓（掃描信號），開啟連 接像素電極及源極線之間之開關元件。藉由將圖12所示之 93979 -40- 1243480 液μ顯示I置之像素37之液晶電容cL及辅助電容Cs置換成 電荷儲存電容，可構成具備作為開關元件之電晶體τ之影 像掃描為之讀出圖像信號之部分。於此構成，源極驅動器 32置換成從像素讀出之圖像信號之輸入電路。又，於線型 · 之掃描器，使用丨線之像素即可。 再者，於為了實施發明之最佳型態項所實現之具體實施 匕、樣或實施例，僅是為了揭示本發明之技術内容者，不應 僅限定於該類具體例而狹義解釋，在本發明之精神及其次 所圮載之申請專利範圍内，可進行各種變更而實施。 籲 【產業上之利用可能性】 本發明之半導體裝置係藉由隔絕體，將對於氣氛敏感之 ZnO或MgxZni-xO從氣氛隔絕，並且藉由將j族、m族、以 族、v族或vii族元素添加於Zn0或MgxZni x〇，可減少由 於賦予隔絕體而產生於活性層之可動電荷。因此，本發明 提t、元件特性女定、不受氣氛左右，並且可將臨限值電壓 控制在可實用範圍之使用Zn0或MgxZnix〇之半導體裝置， 籲 可適於利用於顯示裝置等電子裝置。 【圖式簡單說明】 圖1(a)係表示本發明之第一實施型態之薄膜電晶體之構 成之平面圖。 圖1(b)為圖i(a)之A-A線箭示剖面圖。 圖1(c)為圖i(a)之B-B線箭示剖面圖。 圖2係表示第一實施型態之薄臈電晶體之其他構成之剖 面圖。 93979 -41 - 1243480 圖3 (a)係表示圖丨之薄膜電晶體之製造之閘極配線形成工 序之剖面圖。 圖3(b)係表示圖丨之薄膜電晶體之製造之閘極絕緣膜形 成工序之剖面圖。 圖3 (c)係表示圖1之薄膜電晶體之製造之半導體層形成工 序之剖面圖。 圖3(d)係表示圖1之薄膜電晶體之製造之源極配線及汲 極形成工序之剖面圖。 圖3(e)係表示圖丨之薄膜電晶體之製造之最終工序之剖面 圖。 圖4係表示第一至第三實施型態之薄膜電晶體之 性圖。 圖5係表示第一實施型態之薄膜電晶體之另外其他構成 之平面圖。 圖6(a)係表示本發明之第二實施型態之薄膜電晶體之構 成之平面圖。 圖6(b)為圖6(a)之c_c線箭示剖面圖。 圖6(c)為圖6(a)之D_D線箭示剖面圖。 圖7係表示第二實施型態之薄膜電晶體之其他構成之剖 面圖。 圖8(a)係表示圖6之薄膜電晶體之製造之底層絕緣獏形成 工序之剖面圖。 圖8(b)係表示圖6之薄膜電晶體之製造之源極及汲極形 成工序之剖面圖。 93979 -42- 1243480 _係表示圖6之薄膜電晶體之製造之半導體層、閘極 絕緣膜、閘極形成工序之剖面圖。 體之製造之最終工序之 剖 圖8(d)係表示圖6之薄膜電晶 面圖。 圖9(a)表示本發明之第三實施 只她型怨之溥膜電晶體之構成 之平面圖。 圖9(b)為圖9(a)之E-E線箭示剖面圖。 圖9(c)為圖9(a)之F-F線箭示剖面圖。 之剖 圖1〇係表示第三實施型態之薄膜電晶體之其他構成 面圖 圖11⑷係I示圖9⑷之薄膜電晶體之製造之底層絕緣層 形成工序之剖面圖。 圖11(b)係|示圖9⑷之薄膜電晶體之製造之源極及沒極 形成工序之剖面圖。 圖11⑷係表示圖9⑷之薄膜電晶體之製造之第_間極絕 緣層、半導體層形成工序之剖面圖。 體之製造之最終工序 之 圖11(d)係表示圖9(a)之薄膜電晶 剖面圖。 顯 一圖12係表示本發明之第五實施型態之主動矩陣型液晶 示裝置之概略構成區塊圖。 圖13係表示圖12之液晶顯示裝置之像素構成之電路圖。 圖14⑷係表示以往之未具有保護層之薄膜電晶體之構成 之剖面圖。 圖14(b)係表示以往之呈有伴謹 ”兩保&層之溥Μ電晶體之構成 93979 -43- 1243480 之剖面圖。 圖15係表示保護層之有無之薄膜電晶體之Id-Vg特性圖。 圖16係表示保護層之有無之氧化鋅薄膜之電壓-電阻率 特性圖。 圖17係表示有關第四實施型態之薄膜電晶體之Id-Vg特性 圖。 圖1 8係表示第四實施型態之薄膜電晶體之對於正閘極電 壓之TFT特性之經時劣化圖。 【主要元件符號說明】 1，11，21 薄膜電晶體（半導體裝置） 2, 12, 22 絕緣性基板 3, 18, 29 閘極 4, 17 閘極絕緣層（隔絕層） 5, 16, 26 半導體層（活性層） 6, 14, 24 源極（隔絕層） 7, 15, 25 汲極（隔絕層） 8, 19 保護層（隔絕層） 13, 23 底層絕緣層（隔絕層） 27 第一閘極絕緣層（隔絕層） 28 第二閘極絕緣層（隔絕層） 37 像素 37a 像素電極 105 半導體層（活性層） SLj 源極線 93979 -44- 1243480
GL, T 閘極線 電晶體（開關元件）
93979 -45-
Claims (1)
1243480 、申請專利範圍： 1. 一種半導體裝置’其特徵在於具備：活 「生層，其係包含 ZnO或MgxZni-xO之多晶狀態、#晶狀態或多晶狀離及非 晶狀態混在一起之狀態之半導體，添加有丨:、=族、 IV族、V族或VII族之元素者；及 、 隔絕體，其係在前述活性層在可動電荷移動之區域不 受氣氛影響之範圍内，將前述活性層由氣氛隔絕者。 如請求項1之半導體裝置，其中前述元素為氮、磷、 坤、銻或此等中之2種以上。 3.如請求们之半導體裝置，其中前述元素為氮、碟、 石申、銻或此等中之2種以上及氫。 4·，請求項3之半導體裝置，其中前述活性層係於含有 1 1化二氮、一氧化氮或二氧化氮中之!種以上及 、過氧化氫、氨或此等中之丨種以上之氣氛中形 5. :種半導體裝置之製造方法，其特徵在於其係製造請求 負3之+導體裝置者；且 種^卜氮+氧化一氮、一氧化氮或二氧化氮中之1 氣；^及水蒸氣、過氧化氯、氨或此等中之1種以上之 牙；坑形成前述活性層。 6·如請求項丨、？ α . 由不n y 4之半導體裝置，纟中前述隔絕體係 田不冋隔絕層所組成。 7 ·如請求項6夕t i曾减 係由含、· ¥體裝置’其中前述隔絕層巾之至少1層 l〇2 Al2〇3、A1N、Mg〇、、Ti〇2、 93979 1243480 Zr02、stab-Zr02、Ce〇2、Κ20、U20、Na20、Rb20、 ln203、La203、Sc203、Y2〇3、KNb03、KTa03、 BaTi03、CaSn03、CaZr03、CdSn03、SrHf03、 SrSn03、SrTi03、YSc03、CaHf03、MgCe03、SrCe03、 BaCe03、SrZr03、BaZr03、LiGa02、LiGa02之混晶系 (Lii_(x+y)NaxKy)(Gai-zAlz)〇2或此等中之至少2種之固溶體 所形成。 8 ·如請求項7之半導體裝置，其中在連接於前述活性層之2 個電極以外，與前述活性層形成界面之前述隔絕層中， 在與使控制前述活性層之可動電荷之移動之控制電極及 前述活性層之間絕緣之絕緣層形成界面之區域以外，與 前述活性層形成界面之前述隔絕層係由含有Si〇2、 Al2〇3、AIN、MgO、Ta205、Ti〇2、Zr02、stab_Zr〇2、 Ce02、K20、Li20、Na20、Rb2〇、in2〇3、La203、 Sc2〇3、Y2〇3、KNb03、KTa03、BaTi03、CaSn03、 CaZr03、CdSn03、SrHf03、SrSn03、SrTi03、YSc03、 CaHf〇3、MgCe03、SrCe03、BaCe03、SrZr03、 BaZr〇3、LiGa02、LiGa02之混晶系（Lil (x+y)NaxKy)(Gai ZAlz)〇2或此等中之至少2種之固溶體所形成。 9 ·如睛求項6之半導體裝置，其中前述隔絕層中之至少工層 係由樹脂所形成。 10·如清求項9之半導體裝置，其中在連接於前述活性層之2 個電極以外，與前述活性層形成界面之前述隔絕層中， 在與使控制前述活性層之可動電荷之移動之控制電極及 93979 1243480 刖述活性層之間絕緣之絕緣層形成界面之區域以外，與 丽述活性層形成界面之前述隔絕層係由樹脂所形成。 11 ·如請求項6之半導體裝置，其中具備： 閘極，其係控制前述活性層之可動電荷之移動者； 閘極絕緣層，其係作為使前述活性層及前述閘極之間 絕緣之前述隔絕層；及 源極及汲極，其係連接於前述活性層者； 前述隔絕層中之至少i層係由含有Si〇2、Al2〇3、 Λ1Ν、MgO、Ta205、Ti02、Zr02、stab_Zr〇2、Ce〇2、 K20、Li20、Na20、Rb20、In203、La2〇3、Sc2〇3、 Y203、KNb03、KTa03、BaTi03、CaSn03、CaZr03、 CdSn03、SrHf03、SrSn03、SrTi03、YSc03、CaHf03、 MgCe03、SrCe03、BaCe03、SrZr03、BaZr03、 LiGa02、LiGa〇2 之混晶系（LiHx+wNaxKyKGabzADO:或 此等中之至少2種之固溶體所形成。 12·如請求項11之半導體裝置，其中在前述源極及前述汲極 以外，與前述活性層形成界面之前述隔絕層中，在與前 述閘極絕緣層形成界面之區域以外，與前述活性層形成 界面之前述隔絕層係由含有Si02、Al2〇3、AIN、MgO、 Ta2〇5、Ti02、Zr〇2、stab-Zr〇2、Ce〇2、K2〇、Li2〇、 Na20、Rb20、ln203、La203、Sc203、Y203、KNb03、 KTa03、BaTi03、CaSn03、CaZr03、CdSn03、SrHf03、 SrSn03、SrTi03、YSc03、CaHf03、MgCe03、SrCe〇3、 BaCe〇3、SrZr03、BaZr〇3、LiGa〇2、LiGa〇2之混晶糸 !243480 ㈦—⑽〜叫我)〇2或此等中之至少2種之固溶體 所形成。 1 3 ·如請求項6之半導體裝置，其中具備· 間極，其係控制前述活性層之可動電荷之移動者； 閘極絕緣層，其係作為使前 、， < ^注層及丽述閘極之間 絕緣之前述隔絕層；及 源極及汲極，其係連接於前述活性層者； 前述隔絕層中之至少1層係由樹脂所形成。 !4.如請求項13之半導體裝 i / 八T在則述源極及前述汲極 ::，與前述前述活性層形成界面之前述隔絕層中，在 开 =閘極：緣層形成界面之區域以外，與前述活性層 ν成界面之鈾述隔絕層係由樹脂所形成。 15. :種電子裝置，其係具備請求項1二、;或4之半導體裝 置作為開關元件。 16. 如請求項15之電子裝置，i中舒 傍丰干 U -中月丨』相關元件係為了對於 “❹寫人或讀出圖像信號而連接於像素電極。 •關=子裝置’其係具備請求項6之半導體裝置作為開 18.Γίΐ項17之電子裝置，其中前述開關元件料了對於 b —素％極寫人或讀出圖像信號而連接於像素電極。 .關2子裝置，其係具備請求項7之半導體農置作為開 2°’=;員19之:子裝置’其中前 素电極寫入或讀出圖像信號而連接於像素電極。 93979 1243480 21 22· 23. 24. 25. 26. 27· 28. 29. 30. 31. 32. .關=子裝置’其係具備請求項8之半導趙裝置作為開 求項21之電子裝置’其中前述開關元件係為了對於 —素電極寫人或讀出圖像信號而連接於像素電極。 關::子裝置，其係具備請求項9之半導體裝置作為開 像：：項23之電子裝置，其中前述開關元件係為了對於 —素电極寫人或讀出圖像信號而連接於像素電極。 關裝置，其係具備請求項1〇之半導體裝置作為開 ::求項25之電子裝置’其中前述開關元件係為了對於 —素2極寫入或讀出圖像信號而連接於像素電極。、 關ST裝置，其係具備請求項U之半導體裝置作為開 lit項27之電子裝置，其中前述開關元件係為了對於 '、包極寫入或讀出圖像信號而連接於像素電極。 種&子裝置’其係具備請求項12之半導體裝 關7L件。 ^同 項29之電子裝置，其中前述開關元件係為了對於 ’、屯極寫入或讀出圖像信號而連接於像素電極。 關:::裝置，其係具備請求項13之半導體裝置作為開 項31之電子裝置’其中前述開關元件係為了對於 素兒極寫入或讀出圖像信號而連接於像素電極。 93979 1243480 3 3. —種電子裝置，其係具備請求項14之半導體裝置作為開 關元件。 34.如請求項33之電子裝置，其中前述開關元件係為了對於 像素電極寫入或讀出圖像信號而連接於像素電極。
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- 2004-06-14 US US10/560,907 patent/US8093589B2/en not_active Expired - Fee Related
- 2004-06-14 CN CN201010239835.4A patent/CN101916785B/zh not_active Expired - Fee Related
- 2004-06-14 KR KR1020057024366A patent/KR100745254B1/ko not_active IP Right Cessation
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2011
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI478306B (zh) * | 2008-09-19 | 2015-03-21 | Semiconductor Energy Lab | 顯示裝置 |
| US9196633B2 (en) | 2008-09-19 | 2015-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US10559598B2 (en) | 2008-09-19 | 2020-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US11152397B2 (en) | 2008-09-19 | 2021-10-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US11646321B2 (en) | 2008-09-19 | 2023-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| TWI727231B (zh) * | 2008-12-24 | 2021-05-11 | 日商半導體能源研究所股份有限公司 | 驅動電路、半導體裝置和用於製造半導體裝置的方法 |
| TWI754402B (zh) * | 2008-12-24 | 2022-02-01 | 日商半導體能源研究所股份有限公司 | 驅動電路、半導體裝置和用於製造半導體裝置的方法 |
| TWI502647B (zh) * | 2009-04-02 | 2015-10-01 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
| US9443455B2 (en) | 2011-02-25 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device having a plurality of pixels |
| TWI582494B (zh) * | 2011-02-25 | 2017-05-11 | 半導體能源研究所股份有限公司 | 顯示裝置及電子裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4108633B2 (ja) | 2008-06-25 |
| JP2005033172A (ja) | 2005-02-03 |
| US20110175090A1 (en) | 2011-07-21 |
| US20060244107A1 (en) | 2006-11-02 |
| US8093589B2 (en) | 2012-01-10 |
| CN101916785A (zh) | 2010-12-15 |
| KR100745254B1 (ko) | 2007-08-01 |
| CN101916785B (zh) | 2015-08-05 |
| WO2004114391A1 (ja) | 2004-12-29 |
| US20120132908A1 (en) | 2012-05-31 |
| KR20060073539A (ko) | 2006-06-28 |
| TW200505016A (en) | 2005-02-01 |
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