JP2008085048A5 - - Google Patents

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JP2008085048A5
JP2008085048A5 JP2006262619A JP2006262619A JP2008085048A5 JP 2008085048 A5 JP2008085048 A5 JP 2008085048A5 JP 2006262619 A JP2006262619 A JP 2006262619A JP 2006262619 A JP2006262619 A JP 2006262619A JP 2008085048 A5 JP2008085048 A5 JP 2008085048A5
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field effect
semiconductor device
effect transistors
substrate
effect transistor
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JP2008085048A (ja
JP5164357B2 (ja
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Priority to US11/859,641 priority patent/US7791082B2/en
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JP2006262619A 2006-09-27 2006-09-27 半導体装置及び半導体装置の製造方法 Expired - Fee Related JP5164357B2 (ja)

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JP2006262619A JP5164357B2 (ja) 2006-09-27 2006-09-27 半導体装置及び半導体装置の製造方法
US11/859,641 US7791082B2 (en) 2006-09-27 2007-09-21 Semiconductor apparatus and method of manufacturing the same

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JP2006262619A JP5164357B2 (ja) 2006-09-27 2006-09-27 半導体装置及び半導体装置の製造方法

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JP2008085048A JP2008085048A (ja) 2008-04-10
JP2008085048A5 true JP2008085048A5 (enExample) 2009-11-12
JP5164357B2 JP5164357B2 (ja) 2013-03-21

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Families Citing this family (1823)

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