JP2006080494A5 - - Google Patents

Download PDF

Info

Publication number
JP2006080494A5
JP2006080494A5 JP2005223785A JP2005223785A JP2006080494A5 JP 2006080494 A5 JP2006080494 A5 JP 2006080494A5 JP 2005223785 A JP2005223785 A JP 2005223785A JP 2005223785 A JP2005223785 A JP 2005223785A JP 2006080494 A5 JP2006080494 A5 JP 2006080494A5
Authority
JP
Japan
Prior art keywords
layer
electrode layer
gate
forming
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005223785A
Other languages
English (en)
Japanese (ja)
Other versions
JP4877873B2 (ja
JP2006080494A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005223785A priority Critical patent/JP4877873B2/ja
Priority claimed from JP2005223785A external-priority patent/JP4877873B2/ja
Publication of JP2006080494A publication Critical patent/JP2006080494A/ja
Publication of JP2006080494A5 publication Critical patent/JP2006080494A5/ja
Application granted granted Critical
Publication of JP4877873B2 publication Critical patent/JP4877873B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2005223785A 2004-08-03 2005-08-02 表示装置及びその作製方法 Expired - Fee Related JP4877873B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005223785A JP4877873B2 (ja) 2004-08-03 2005-08-02 表示装置及びその作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2004227242 2004-08-03
JP2004227242 2004-08-03
JP2004234617 2004-08-11
JP2004234617 2004-08-11
JP2005223785A JP4877873B2 (ja) 2004-08-03 2005-08-02 表示装置及びその作製方法

Publications (3)

Publication Number Publication Date
JP2006080494A JP2006080494A (ja) 2006-03-23
JP2006080494A5 true JP2006080494A5 (enExample) 2008-07-03
JP4877873B2 JP4877873B2 (ja) 2012-02-15

Family

ID=36159662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005223785A Expired - Fee Related JP4877873B2 (ja) 2004-08-03 2005-08-02 表示装置及びその作製方法

Country Status (1)

Country Link
JP (1) JP4877873B2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007333808A (ja) * 2006-06-12 2007-12-27 Mitsubishi Electric Corp アクティブマトリクス表示装置
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
JP2009128577A (ja) * 2007-11-22 2009-06-11 Hitachi Ltd 有機発光表示装置
US8945981B2 (en) * 2008-07-31 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102251817B1 (ko) 2008-10-24 2021-05-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
TW201921700A (zh) 2008-11-07 2019-06-01 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
US8174021B2 (en) * 2009-02-06 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
US8247276B2 (en) 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
TWI529942B (zh) * 2009-03-27 2016-04-11 半導體能源研究所股份有限公司 半導體裝置
CN104576748B (zh) 2009-06-30 2019-03-15 株式会社半导体能源研究所 半导体装置的制造方法
JP5663214B2 (ja) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101907366B1 (ko) * 2009-07-18 2018-10-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
CN104681447A (zh) * 2009-09-04 2015-06-03 株式会社半导体能源研究所 半导体器件的制造方法
KR101402294B1 (ko) 2009-10-21 2014-06-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작방법
WO2011062075A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
WO2011090087A1 (en) * 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Display method of display device
JP6615490B2 (ja) * 2014-05-29 2019-12-04 株式会社半導体エネルギー研究所 半導体装置及び電子機器
TWI755773B (zh) * 2014-06-30 2022-02-21 日商半導體能源研究所股份有限公司 發光裝置，模組，及電子裝置
KR102741522B1 (ko) 2019-05-31 2024-12-11 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
US11882741B2 (en) 2019-05-31 2024-01-23 Samsung Display Co., Ltd. Display device and manufacturing method thereof
CN116057670A (zh) * 2020-09-24 2023-05-02 松下知识产权经营株式会社 摄像装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6410222A (en) * 1987-07-03 1989-01-13 Asahi Glass Co Ltd Substrate for thin film passive element
JPH05267662A (ja) * 1992-03-19 1993-10-15 Hitachi Ltd 相補型薄膜半導体装置およびそれを用いた画像情報処理装置
JP2003241689A (ja) * 2002-02-19 2003-08-29 Canon Inc 有機半導体デバイス及びその製造方法

Similar Documents

Publication Publication Date Title
JP2006080494A5 (enExample)
CN102867839B (zh) 有机电致发光显示装置的阵列基板及其制造方法
US8373237B2 (en) Transistor and method of manufacturing the same
JP5399298B2 (ja) 有機電界発光表示装置及びその製造方法
JP4404881B2 (ja) 薄膜トランジスタアレイ、その製造方法及び液晶表示装置
CN103582952B (zh) 半导体器件和显示装置
JP5250929B2 (ja) トランジスタおよびその製造方法
CN102842509B (zh) 薄膜晶体管及制造方法、有机发光显示装置及制造方法
JP6483182B2 (ja) 半導体装置
TWI567967B (zh) 有機發光顯示裝置及其製造方法
KR101019048B1 (ko) 어레이 기판 및 이의 제조방법
JP6503459B2 (ja) 半導体装置及びその製造方法
CN104733543A (zh) 薄膜晶体管阵列面板及其制造方法
KR101041147B1 (ko) 박막 트랜지스터, 박막 트랜지스터의 액티브층의 제조 방법 및 표시 장치
CN102931198A (zh) 薄膜晶体管阵列衬底和包括其的有机发光显示器及其制造方法
TWI527118B (zh) 薄膜的製造方法及使用該方法的顯示器金屬線薄膜電晶體陣列面板及該面板的製造方法
KR20140137704A (ko) 유기 발광 표시 장치 및 그 제조 방법
JP2006058676A5 (enExample)
JP2019169606A (ja) アクティブマトリクス基板およびその製造方法
JP2010205765A (ja) 自己整合半導体トランジスタの製造方法
US8803148B2 (en) Thin film transistor, manufacturing method of thin film transistor, and organic light emitting diode display including the same
TWI384626B (zh) 用於顯示裝置之陣列基板及其製造方法
JP2006128666A5 (enExample)
KR100788551B1 (ko) 유기 전계 발광 표시 장치 및 그 제조 방법
KR20140083150A (ko) 유기전계 발광소자 그 제조 방법