JP2006080494A5 - - Google Patents
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- Publication number
- JP2006080494A5 JP2006080494A5 JP2005223785A JP2005223785A JP2006080494A5 JP 2006080494 A5 JP2006080494 A5 JP 2006080494A5 JP 2005223785 A JP2005223785 A JP 2005223785A JP 2005223785 A JP2005223785 A JP 2005223785A JP 2006080494 A5 JP2006080494 A5 JP 2006080494A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode layer
- gate
- forming
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 115
- 238000010438 heat treatment Methods 0.000 claims 12
- 239000012535 impurity Substances 0.000 claims 10
- 229910052751 metal Inorganic materials 0.000 claims 10
- 239000002184 metal Substances 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 9
- 238000002425 crystallisation Methods 0.000 claims 8
- 230000008025 crystallization Effects 0.000 claims 8
- 238000000059 patterning Methods 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- 238000007599 discharging Methods 0.000 claims 3
- 239000000203 mixture Substances 0.000 claims 3
- 239000011787 zinc oxide Substances 0.000 claims 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 229910052797 bismuth Inorganic materials 0.000 claims 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 2
- 229910052735 hafnium Inorganic materials 0.000 claims 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052758 niobium Inorganic materials 0.000 claims 2
- 239000010955 niobium Substances 0.000 claims 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 230000001737 promoting effect Effects 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 2
- 229910001887 tin oxide Inorganic materials 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 229910003437 indium oxide Inorganic materials 0.000 claims 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005223785A JP4877873B2 (ja) | 2004-08-03 | 2005-08-02 | 表示装置及びその作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004227242 | 2004-08-03 | ||
| JP2004227242 | 2004-08-03 | ||
| JP2004234617 | 2004-08-11 | ||
| JP2004234617 | 2004-08-11 | ||
| JP2005223785A JP4877873B2 (ja) | 2004-08-03 | 2005-08-02 | 表示装置及びその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006080494A JP2006080494A (ja) | 2006-03-23 |
| JP2006080494A5 true JP2006080494A5 (enExample) | 2008-07-03 |
| JP4877873B2 JP4877873B2 (ja) | 2012-02-15 |
Family
ID=36159662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005223785A Expired - Fee Related JP4877873B2 (ja) | 2004-08-03 | 2005-08-02 | 表示装置及びその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4877873B2 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007333808A (ja) * | 2006-06-12 | 2007-12-27 | Mitsubishi Electric Corp | アクティブマトリクス表示装置 |
| KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
| JP2009128577A (ja) * | 2007-11-22 | 2009-06-11 | Hitachi Ltd | 有機発光表示装置 |
| JP2010056541A (ja) * | 2008-07-31 | 2010-03-11 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| KR20180137606A (ko) | 2008-10-24 | 2018-12-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| TWI655780B (zh) * | 2008-11-07 | 2019-04-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
| US8174021B2 (en) * | 2009-02-06 | 2012-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the semiconductor device |
| US8247276B2 (en) | 2009-02-20 | 2012-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, method for manufacturing the same, and semiconductor device |
| TWI529942B (zh) * | 2009-03-27 | 2016-04-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| EP2449595B1 (en) * | 2009-06-30 | 2017-07-26 | Semiconductor Energy Laboratory Co, Ltd. | Method for manufacturing semiconductor device |
| JP5663214B2 (ja) * | 2009-07-03 | 2015-02-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN102751295B (zh) | 2009-07-18 | 2015-07-15 | 株式会社半导体能源研究所 | 半导体装置与用于制造半导体装置的方法 |
| KR101791812B1 (ko) | 2009-09-04 | 2017-10-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| WO2011048925A1 (en) * | 2009-10-21 | 2011-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| CN104332177B (zh) * | 2009-11-20 | 2018-05-08 | 株式会社半导体能源研究所 | 非易失性锁存电路和逻辑电路，以及使用其的半导体器件 |
| CN102714029B (zh) * | 2010-01-20 | 2016-03-23 | 株式会社半导体能源研究所 | 显示装置的显示方法 |
| KR102354008B1 (ko) * | 2014-05-29 | 2022-01-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 반도체 장치의 제작 방법 및 전자 기기 |
| TWI755773B (zh) * | 2014-06-30 | 2022-02-21 | 日商半導體能源研究所股份有限公司 | 發光裝置，模組，及電子裝置 |
| US11882741B2 (en) | 2019-05-31 | 2024-01-23 | Samsung Display Co., Ltd. | Display device and manufacturing method thereof |
| KR102741522B1 (ko) | 2019-05-31 | 2024-12-11 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6410222A (en) * | 1987-07-03 | 1989-01-13 | Asahi Glass Co Ltd | Substrate for thin film passive element |
| JPH05267662A (ja) * | 1992-03-19 | 1993-10-15 | Hitachi Ltd | 相補型薄膜半導体装置およびそれを用いた画像情報処理装置 |
| JP2003241689A (ja) * | 2002-02-19 | 2003-08-29 | Canon Inc | 有機半導体デバイス及びその製造方法 |
-
2005
- 2005-08-02 JP JP2005223785A patent/JP4877873B2/ja not_active Expired - Fee Related
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