JP4877873B2 - 表示装置及びその作製方法 - Google Patents

表示装置及びその作製方法 Download PDF

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Publication number
JP4877873B2
JP4877873B2 JP2005223785A JP2005223785A JP4877873B2 JP 4877873 B2 JP4877873 B2 JP 4877873B2 JP 2005223785 A JP2005223785 A JP 2005223785A JP 2005223785 A JP2005223785 A JP 2005223785A JP 4877873 B2 JP4877873 B2 JP 4877873B2
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Japan
Prior art keywords
layer
electrode layer
source
gate
film
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Expired - Fee Related
Application number
JP2005223785A
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English (en)
Japanese (ja)
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JP2006080494A (ja
JP2006080494A5 (enExample
Inventor
舜平 山崎
博信 小路
慎志 前川
理 中村
達也 本田
厳 藤井
幸恵 鈴木
郁子 川俣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005223785A priority Critical patent/JP4877873B2/ja
Publication of JP2006080494A publication Critical patent/JP2006080494A/ja
Publication of JP2006080494A5 publication Critical patent/JP2006080494A5/ja
Application granted granted Critical
Publication of JP4877873B2 publication Critical patent/JP4877873B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8794—Arrangements for heating and cooling

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
JP2005223785A 2004-08-03 2005-08-02 表示装置及びその作製方法 Expired - Fee Related JP4877873B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005223785A JP4877873B2 (ja) 2004-08-03 2005-08-02 表示装置及びその作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2004227242 2004-08-03
JP2004227242 2004-08-03
JP2004234617 2004-08-11
JP2004234617 2004-08-11
JP2005223785A JP4877873B2 (ja) 2004-08-03 2005-08-02 表示装置及びその作製方法

Publications (3)

Publication Number Publication Date
JP2006080494A JP2006080494A (ja) 2006-03-23
JP2006080494A5 JP2006080494A5 (enExample) 2008-07-03
JP4877873B2 true JP4877873B2 (ja) 2012-02-15

Family

ID=36159662

Family Applications (1)

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JP2005223785A Expired - Fee Related JP4877873B2 (ja) 2004-08-03 2005-08-02 表示装置及びその作製方法

Country Status (1)

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JP (1) JP4877873B2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10916620B2 (en) 2019-05-31 2021-02-09 Samsung Display Co., Ltd. Display device and manufacturing method thereof
US11882741B2 (en) 2019-05-31 2024-01-23 Samsung Display Co., Ltd. Display device and manufacturing method thereof

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007333808A (ja) * 2006-06-12 2007-12-27 Mitsubishi Electric Corp アクティブマトリクス表示装置
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
JP2009128577A (ja) * 2007-11-22 2009-06-11 Hitachi Ltd 有機発光表示装置
JP2010056541A (ja) * 2008-07-31 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR20180137606A (ko) 2008-10-24 2018-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
TWI655780B (zh) * 2008-11-07 2019-04-01 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
US8174021B2 (en) * 2009-02-06 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
US8247276B2 (en) 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
TWI529942B (zh) * 2009-03-27 2016-04-11 半導體能源研究所股份有限公司 半導體裝置
EP2449595B1 (en) * 2009-06-30 2017-07-26 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
JP5663214B2 (ja) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN102751295B (zh) 2009-07-18 2015-07-15 株式会社半导体能源研究所 半导体装置与用于制造半导体装置的方法
KR101791812B1 (ko) 2009-09-04 2017-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
WO2011048925A1 (en) * 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN104332177B (zh) * 2009-11-20 2018-05-08 株式会社半导体能源研究所 非易失性锁存电路和逻辑电路，以及使用其的半导体器件
CN102714029B (zh) * 2010-01-20 2016-03-23 株式会社半导体能源研究所 显示装置的显示方法
KR102354008B1 (ko) * 2014-05-29 2022-01-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 반도체 장치의 제작 방법 및 전자 기기
TWI755773B (zh) * 2014-06-30 2022-02-21 日商半導體能源研究所股份有限公司 發光裝置，模組，及電子裝置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6410222A (en) * 1987-07-03 1989-01-13 Asahi Glass Co Ltd Substrate for thin film passive element
JPH05267662A (ja) * 1992-03-19 1993-10-15 Hitachi Ltd 相補型薄膜半導体装置およびそれを用いた画像情報処理装置
JP2003241689A (ja) * 2002-02-19 2003-08-29 Canon Inc 有機半導体デバイス及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10916620B2 (en) 2019-05-31 2021-02-09 Samsung Display Co., Ltd. Display device and manufacturing method thereof
US11581390B2 (en) 2019-05-31 2023-02-14 Samsung Display Co., Ltd. Display device and manufacturing method thereof
US11882741B2 (en) 2019-05-31 2024-01-23 Samsung Display Co., Ltd. Display device and manufacturing method thereof

Also Published As

Publication number Publication date
JP2006080494A (ja) 2006-03-23

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