JP2008537631A - ディスプレイの製造方法 - Google Patents

ディスプレイの製造方法 Download PDF

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Publication number
JP2008537631A
JP2008537631A JP2008504230A JP2008504230A JP2008537631A JP 2008537631 A JP2008537631 A JP 2008537631A JP 2008504230 A JP2008504230 A JP 2008504230A JP 2008504230 A JP2008504230 A JP 2008504230A JP 2008537631 A JP2008537631 A JP 2008537631A
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Prior art keywords
layer
electrode
thin film
thermal transfer
transfer layer
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Pending
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JP2008504230A
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Japanese (ja)
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JP2008537631A5 (OSRAM
Inventor
ディー． タイス，スティーブン
エフ． バウド，ポール
エー． ハーセ，マイケル
ダブリュ． ヘメッシュ，エリック
リウ，ヤオクイ
エー． ラマンスキー，セルゲイ
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2008537631A publication Critical patent/JP2008537631A/ja
Publication of JP2008537631A5 publication Critical patent/JP2008537631A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/917—Electroluminescent

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2008504230A 2005-03-31 2006-03-27 ディスプレイの製造方法 Pending JP2008537631A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/094,928 US7645478B2 (en) 2005-03-31 2005-03-31 Methods of making displays
PCT/US2006/011130 WO2006105028A1 (en) 2005-03-31 2006-03-27 Methods of making displays

Publications (2)

Publication Number Publication Date
JP2008537631A true JP2008537631A (ja) 2008-09-18
JP2008537631A5 JP2008537631A5 (OSRAM) 2009-04-30

Family

ID=36763020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008504230A Pending JP2008537631A (ja) 2005-03-31 2006-03-27 ディスプレイの製造方法

Country Status (7)

Country Link
US (1) US7645478B2 (OSRAM)
EP (1) EP1866966A1 (OSRAM)
JP (1) JP2008537631A (OSRAM)
KR (1) KR101202515B1 (OSRAM)
CN (1) CN101156244B (OSRAM)
TW (1) TW200644313A (OSRAM)
WO (1) WO2006105028A1 (OSRAM)

Cited By (7)

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KR20150075738A (ko) * 2013-12-26 2015-07-06 엘지디스플레이 주식회사 투명 유기 발광 표시 장치
JP2018182332A (ja) * 2009-12-11 2018-11-15 株式会社半導体エネルギー研究所 半導体装置
JP2019033286A (ja) * 2008-10-03 2019-02-28 株式会社半導体エネルギー研究所 半導体装置
JP2019091938A (ja) * 2009-07-31 2019-06-13 株式会社半導体エネルギー研究所 半導体装置
JP2020115546A (ja) * 2009-12-25 2020-07-30 株式会社半導体エネルギー研究所 半導体装置
KR20200115430A (ko) * 2020-09-25 2020-10-07 엘지디스플레이 주식회사 투명 유기 발광 표시 장치
KR20210038517A (ko) * 2020-09-25 2021-04-07 엘지디스플레이 주식회사 투명 유기 발광 표시 장치

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TWI562380B (en) * 2005-01-28 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device, electronic device, and method of manufacturing semiconductor device
US7928938B2 (en) * 2005-04-19 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory circuit, display device and electronic apparatus
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EP1724751B1 (en) 2005-05-20 2013-04-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic apparatus
US8059109B2 (en) * 2005-05-20 2011-11-15 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic apparatus
US8629819B2 (en) 2005-07-14 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
EP1758072A3 (en) * 2005-08-24 2007-05-02 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
KR100759685B1 (ko) * 2005-09-08 2007-09-17 삼성에스디아이 주식회사 레이저 전사용 전사부재 및 이를 이용한 발광소자 및발광소자의 제조방법
EP1998373A3 (en) 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
EP1935027B1 (en) 2005-10-14 2017-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7990047B2 (en) * 2005-10-28 2011-08-02 Samsung Electronics Co., Ltd. Organic light emitting diode display and method of manufacturing the same
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JP4977391B2 (ja) * 2006-03-27 2012-07-18 日本電気株式会社 レーザ切断方法、表示装置の製造方法、および表示装置
EP2924498A1 (en) 2006-04-06 2015-09-30 Semiconductor Energy Laboratory Co, Ltd. Liquid crystal desplay device, semiconductor device, and electronic appliance
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US7646015B2 (en) * 2006-10-31 2010-01-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
DE102007001742A1 (de) * 2007-01-11 2008-07-17 Osram Opto Semiconductors Gmbh Optoelektronische Vorrichtung und Verfahren zur Herstellung einer optoelektronischen Vorrichtung
US20080205010A1 (en) * 2007-02-26 2008-08-28 3M Innovative Properties Company Active matrix backplanes allowing relaxed alignment tolerance
US7629206B2 (en) * 2007-02-26 2009-12-08 3M Innovative Properties Company Patterning self-aligned transistors using back surface illumination
JP5121254B2 (ja) * 2007-02-28 2013-01-16 キヤノン株式会社 薄膜トランジスタおよび表示装置
CN101271869B (zh) * 2007-03-22 2015-11-25 株式会社半导体能源研究所 发光器件的制造方法
JP5542297B2 (ja) 2007-05-17 2014-07-09 株式会社半導体エネルギー研究所 液晶表示装置、表示モジュール及び電子機器
JP4989309B2 (ja) 2007-05-18 2012-08-01 株式会社半導体エネルギー研究所 液晶表示装置
JP2010532096A (ja) * 2007-06-28 2010-09-30 スリーエム イノベイティブ プロパティズ カンパニー ゲート構造体を形成する方法
US8354674B2 (en) 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
WO2009014155A1 (en) 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
NO332409B1 (no) * 2008-01-24 2012-09-17 Well Technology As Anordning og fremgangsmate for a isolere en seksjon av et bronnhull
WO2009104302A1 (ja) * 2008-02-19 2009-08-27 シャープ株式会社 Ｔｆｔ、シフトレジスタ、走査信号線駆動回路、スイッチ回路、および、表示装置
GB0803702D0 (en) 2008-02-28 2008-04-09 Isis Innovation Transparent conducting oxides
KR100931491B1 (ko) * 2008-04-07 2009-12-11 삼성모바일디스플레이주식회사 유기 전계 발광표시장치 및 그의 제조방법
US9041202B2 (en) 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US8314765B2 (en) 2008-06-17 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device, and electronic device
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US9666719B2 (en) * 2008-07-31 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
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WO2010032639A1 (en) * 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
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JP5361651B2 (ja) * 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2010047288A1 (en) * 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
JP5616012B2 (ja) 2008-10-24 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
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EP2180518B1 (en) 2008-10-24 2018-04-25 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
KR101667909B1 (ko) 2008-10-24 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
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US8106400B2 (en) 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8741702B2 (en) 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101603303B1 (ko) 2008-10-31 2016-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 도전성 산질화물 및 도전성 산질화물막의 제작 방법
KR101631454B1 (ko) 2008-10-31 2016-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리회로
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WO2010050419A1 (en) * 2008-10-31 2010-05-06 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and display device
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JP2010135771A (ja) * 2008-11-07 2010-06-17 Semiconductor Energy Lab Co Ltd 半導体装置及び当該半導体装置の作製方法
KR101711249B1 (ko) * 2008-11-07 2017-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
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CN101740631B (zh) * 2008-11-07 2014-07-16 株式会社半导体能源研究所 半导体装置及该半导体装置的制造方法
EP2184783B1 (en) 2008-11-07 2012-10-03 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and method for manufacturing the same
TWI502739B (zh) 2008-11-13 2015-10-01 Semiconductor Energy Lab 半導體裝置及其製造方法
KR101432764B1 (ko) 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
US8232947B2 (en) 2008-11-14 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2010153802A (ja) 2008-11-20 2010-07-08 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
KR102359831B1 (ko) 2008-11-21 2022-02-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
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WO2010071183A1 (en) * 2008-12-19 2010-06-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
EP2202802B1 (en) 2008-12-24 2012-09-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
TWI476915B (zh) * 2008-12-25 2015-03-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8114720B2 (en) 2008-12-25 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101719350B1 (ko) * 2008-12-25 2017-03-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8441007B2 (en) 2008-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
TWI501319B (zh) * 2008-12-26 2015-09-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP5590877B2 (ja) * 2008-12-26 2014-09-17 株式会社半導体エネルギー研究所 半導体装置
KR101648927B1 (ko) 2009-01-16 2016-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8492756B2 (en) * 2009-01-23 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8436350B2 (en) * 2009-01-30 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using an oxide semiconductor with a plurality of metal clusters
US8367486B2 (en) 2009-02-05 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
US8174021B2 (en) 2009-02-06 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
US8749930B2 (en) * 2009-02-09 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Protection circuit, semiconductor device, photoelectric conversion device, and electronic device
US8278657B2 (en) * 2009-02-13 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
CN101840936B (zh) 2009-02-13 2014-10-08 株式会社半导体能源研究所 包括晶体管的半导体装置及其制造方法
US8247812B2 (en) * 2009-02-13 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
US8247276B2 (en) 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US8841661B2 (en) 2009-02-25 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
US8704216B2 (en) 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20100224878A1 (en) 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8461582B2 (en) 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101671210B1 (ko) 2009-03-06 2016-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR102068632B1 (ko) 2009-03-12 2020-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
TWI556323B (zh) 2009-03-13 2016-11-01 半導體能源研究所股份有限公司 半導體裝置及該半導體裝置的製造方法
US8450144B2 (en) * 2009-03-26 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101681884B1 (ko) 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치, 표시장치 및 전자기기
KR101752640B1 (ko) 2009-03-27 2017-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
TWI529942B (zh) 2009-03-27 2016-04-11 半導體能源研究所股份有限公司 半導體裝置
US8927981B2 (en) * 2009-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8338226B2 (en) * 2009-04-02 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI489628B (zh) * 2009-04-02 2015-06-21 Semiconductor Energy Lab 半導體裝置和其製造方法
JP5615018B2 (ja) 2009-04-10 2014-10-29 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
TWI535023B (zh) 2009-04-16 2016-05-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
KR101842182B1 (ko) * 2009-05-01 2018-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP5751762B2 (ja) 2009-05-21 2015-07-22 株式会社半導体エネルギー研究所 半導体装置
EP2256795B1 (en) * 2009-05-29 2014-11-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for oxide semiconductor device
EP2256814B1 (en) 2009-05-29 2019-01-16 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
JP5564331B2 (ja) 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101645146B1 (ko) 2009-06-30 2016-08-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
KR101805335B1 (ko) 2009-06-30 2017-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치, 및 전자 장비
WO2011001881A1 (en) 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011002046A1 (en) 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110000175A1 (en) * 2009-07-01 2011-01-06 Husqvarna Consumer Outdoor Products N.A. Inc. Variable speed controller
KR101476817B1 (ko) 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터를 갖는 표시 장치 및 그 제작 방법
KR101610606B1 (ko) * 2009-07-03 2016-04-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP5663214B2 (ja) 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101252294B1 (ko) * 2009-07-06 2013-04-05 한국전자통신연구원 투명 정보 전달 윈도우
KR101642620B1 (ko) 2009-07-10 2016-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR20220100086A (ko) 2009-07-10 2022-07-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR102798889B1 (ko) 2009-07-10 2025-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 제작 방법
WO2011007675A1 (en) * 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011007682A1 (en) 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
WO2011007677A1 (en) 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011010545A1 (en) * 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011010544A1 (en) 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2011010543A1 (en) 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2011010541A1 (en) 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011010542A1 (en) 2009-07-23 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101785992B1 (ko) 2009-07-24 2017-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN105070761B (zh) 2009-07-31 2019-08-20 株式会社半导体能源研究所 显示装置
KR102153841B1 (ko) 2009-07-31 2020-09-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR102097932B1 (ko) 2009-07-31 2020-04-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스 및 그 형성 방법
WO2011013502A1 (en) * 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI604594B (zh) * 2009-08-07 2017-11-01 半導體能源研究所股份有限公司 半導體裝置及包括該半導體裝置之電話、錶、和顯示裝置
JP5642447B2 (ja) 2009-08-07 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
EP2284891B1 (en) 2009-08-07 2019-07-24 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
JP5663231B2 (ja) 2009-08-07 2015-02-04 株式会社半導体エネルギー研究所 発光装置
TWI596741B (zh) 2009-08-07 2017-08-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI634642B (zh) 2009-08-07 2018-09-01 半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI830077B (zh) 2009-08-07 2024-01-21 日商半導體能源研究所股份有限公司 半導體裝置
TWI498786B (zh) * 2009-08-24 2015-09-01 Semiconductor Energy Lab 觸控感應器及其驅動方法與顯示裝置
US8115883B2 (en) 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
WO2011027649A1 (en) * 2009-09-02 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a transistor, and manufacturing method of semiconductor device
GB0915376D0 (en) 2009-09-03 2009-10-07 Isis Innovation Transparent conducting oxides
WO2011027701A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
KR101672072B1 (ko) 2009-09-04 2016-11-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR102775255B1 (ko) 2009-09-04 2025-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
WO2011027664A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
WO2011027702A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
WO2011027676A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011027656A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
KR101746198B1 (ko) 2009-09-04 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 전자기기
CN105810753A (zh) * 2009-09-04 2016-07-27 株式会社半导体能源研究所 半导体器件及其制造方法
JP5700626B2 (ja) * 2009-09-04 2015-04-15 株式会社半導体エネルギー研究所 Ｅｌ表示装置
WO2011033914A1 (en) 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Driving method of display device and display device
WO2011034012A1 (en) 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, light emitting device, semiconductor device, and electronic device
US9715845B2 (en) 2009-09-16 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
KR101519893B1 (ko) 2009-09-16 2015-05-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
KR101700470B1 (ko) * 2009-09-16 2017-01-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 구동 회로를 포함하는 표시 장치 및 표시 장치를 포함하는 전자 기기
KR102236140B1 (ko) 2009-09-16 2021-04-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
EP2478563B1 (en) * 2009-09-16 2021-04-07 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing a samesemiconductor device
KR20210048590A (ko) 2009-09-16 2021-05-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011037008A1 (en) * 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
KR102180761B1 (ko) 2009-09-24 2020-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
WO2011037010A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and method for manufacturing the same
KR101827687B1 (ko) 2009-09-24 2018-02-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 상기 구동 회로를 포함하는 표시 장치, 및 상기 표시 장치를 포함하는 전자 기기
WO2011036981A1 (en) * 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011037050A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101740943B1 (ko) * 2009-09-24 2017-06-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
TWI512997B (zh) 2009-09-24 2015-12-11 Semiconductor Energy Lab 半導體裝置，電源電路，和半導體裝置的製造方法
KR20130026404A (ko) 2009-09-24 2013-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
KR101883330B1 (ko) * 2009-09-30 2018-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레독스 커패시터 및 그 제작 방법
WO2011040213A1 (en) * 2009-10-01 2011-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011043182A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for removing electricity and method for manufacturing semiconductor device
KR20120084751A (ko) 2009-10-05 2012-07-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN102648524B (zh) 2009-10-08 2015-09-23 株式会社半导体能源研究所 半导体器件、显示装置和电子电器
SG178056A1 (en) 2009-10-08 2012-03-29 Semiconductor Energy Lab Oxide semiconductor layer and semiconductor device
WO2011043194A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101949670B1 (ko) 2009-10-09 2019-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101396096B1 (ko) 2009-10-09 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011043206A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101820973B1 (ko) * 2009-10-09 2018-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
WO2011043164A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR20120083341A (ko) * 2009-10-09 2012-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 액정 표시 장치를 포함하는 전자 기기
KR101790704B1 (ko) 2009-10-09 2017-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 시프트 레지스터 및 표시 장치
CN107195328B (zh) 2009-10-09 2020-11-10 株式会社半导体能源研究所 移位寄存器和显示装置以及其驱动方法
KR101944239B1 (ko) 2009-10-09 2019-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 표시 장치 및 이를 포함한 전자 기기
EP2486595B1 (en) 2009-10-09 2019-10-23 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
KR101779349B1 (ko) * 2009-10-14 2017-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011046032A1 (en) 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic apparatus having the same
KR101426723B1 (ko) 2009-10-16 2014-08-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
SG178057A1 (en) * 2009-10-16 2012-03-29 Semiconductor Energy Lab Logic circuit and semiconductor device
KR101915251B1 (ko) * 2009-10-16 2018-11-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102065330B1 (ko) 2009-10-16 2020-01-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 제작 방법
KR102377866B1 (ko) 2009-10-21 2022-03-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 아날로그 회로 및 반도체 장치
KR101291488B1 (ko) * 2009-10-21 2013-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20170130641A (ko) 2009-10-21 2017-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 그 액정 표시 장치를 구비하는 전자기기
CN102576734B (zh) 2009-10-21 2015-04-22 株式会社半导体能源研究所 显示装置和包括显示装置的电子设备
KR101751908B1 (ko) 2009-10-21 2017-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전압 조정 회로
WO2011048925A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011048923A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. E-book reader
CN104485336B (zh) 2009-10-21 2018-01-02 株式会社半导体能源研究所 半导体器件
SG10201910510UA (en) 2009-10-29 2020-01-30 Semiconductor Energy Lab Semiconductor device
KR101969279B1 (ko) 2009-10-29 2019-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102668096B (zh) 2009-10-30 2015-04-29 株式会社半导体能源研究所 半导体装置及其制造方法
WO2011052413A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device, and electronic device
CN102668095B (zh) * 2009-10-30 2016-08-03 株式会社半导体能源研究所 晶体管
KR101712340B1 (ko) 2009-10-30 2017-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 구동 회로를 포함하는 표시 장치, 및 표시 장치를 포함하는 전자 기기
WO2011052385A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011052411A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
KR101499494B1 (ko) * 2009-10-30 2015-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치
WO2011052437A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
KR101751712B1 (ko) * 2009-10-30 2017-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전압 조정 회로
WO2011052344A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, driving method of the same, and electronic appliance including the same
KR101788521B1 (ko) 2009-10-30 2017-10-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011052382A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102598249B (zh) 2009-10-30 2014-11-05 株式会社半导体能源研究所 半导体装置
KR101740684B1 (ko) * 2009-10-30 2017-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 파워 다이오드, 정류기 및 그것을 가지는 반도체 장치
CN102612749B (zh) * 2009-11-06 2015-04-01 株式会社半导体能源研究所 半导体器件
WO2011055669A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011055645A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101727469B1 (ko) 2009-11-06 2017-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
EP2497111B1 (en) 2009-11-06 2016-03-30 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
JP5539846B2 (ja) 2009-11-06 2014-07-02 株式会社半導体エネルギー研究所 評価方法、半導体装置の作製方法
KR101930230B1 (ko) 2009-11-06 2018-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하기 위한 방법
WO2011055769A1 (en) * 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor element and semiconductor device, and deposition apparatus
KR101932407B1 (ko) 2009-11-06 2018-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011055625A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and operating method thereof
WO2011055668A1 (en) * 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102598282B (zh) 2009-11-06 2015-09-23 株式会社半导体能源研究所 半导体装置及其制造方法
WO2011058852A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101799265B1 (ko) 2009-11-13 2017-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR102072118B1 (ko) 2009-11-13 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이 표시 장치를 구비한 전자 기기
KR101975741B1 (ko) * 2009-11-13 2019-05-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 타깃 재료의 포장 방법 및 타깃의 장착 방법
KR20120106950A (ko) * 2009-11-13 2012-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟 및 그 제작 방법 및 트랜지스터
KR101893332B1 (ko) 2009-11-13 2018-08-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
WO2011058865A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor devi ce
WO2011058913A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101738996B1 (ko) * 2009-11-13 2017-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 메모리 소자를 포함하는 장치
WO2011058882A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and manufacturing method thereof, and transistor
WO2011062029A1 (en) 2009-11-18 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
CN102668063B (zh) * 2009-11-20 2015-02-18 株式会社半导体能源研究所 半导体装置
WO2011062057A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20220041239A (ko) * 2009-11-20 2022-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
KR101708607B1 (ko) 2009-11-20 2017-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101928723B1 (ko) 2009-11-20 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
MY166309A (en) 2009-11-20 2018-06-25 Semiconductor Energy Lab Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
WO2011062041A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Transistor
KR101448908B1 (ko) * 2009-11-20 2014-10-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5762723B2 (ja) 2009-11-20 2015-08-12 株式会社半導体エネルギー研究所 変調回路及びそれを備えた半導体装置
KR101995704B1 (ko) 2009-11-20 2019-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
WO2011065183A1 (en) * 2009-11-24 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory cell
KR20120099450A (ko) 2009-11-27 2012-09-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102446585B1 (ko) 2009-11-27 2022-09-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
WO2011065209A1 (en) * 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
KR101911382B1 (ko) * 2009-11-27 2018-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011065210A1 (en) * 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
EP2504855A4 (en) 2009-11-28 2016-07-20 Semiconductor Energy Lab STACKED OXIDE MATERIAL, SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
KR101824124B1 (ko) 2009-11-28 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011065243A1 (en) 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102648490B (zh) 2009-11-30 2016-08-17 株式会社半导体能源研究所 液晶显示设备、用于驱动该液晶显示设备的方法、以及包括该液晶显示设备的电子设备
CN102648526B (zh) 2009-12-04 2015-08-05 株式会社半导体能源研究所 半导体器件及其制造方法
CN104795323B (zh) 2009-12-04 2017-12-29 株式会社半导体能源研究所 半导体装置及其制造方法
KR101396102B1 (ko) 2009-12-04 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011068028A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and method for manufacturing the same
WO2011068025A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Dc converter circuit and power supply circuit
WO2011068016A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102648525B (zh) 2009-12-04 2016-05-04 株式会社半导体能源研究所 显示装置
JP2011139052A (ja) 2009-12-04 2011-07-14 Semiconductor Energy Lab Co Ltd 半導体記憶装置
JP5584103B2 (ja) 2009-12-04 2014-09-03 株式会社半導体エネルギー研究所 半導体装置
KR102010752B1 (ko) 2009-12-04 2019-08-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2011068106A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
KR20120107107A (ko) 2009-12-04 2012-09-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101501420B1 (ko) * 2009-12-04 2015-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101945171B1 (ko) * 2009-12-08 2019-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101511076B1 (ko) * 2009-12-08 2015-04-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN102763154B (zh) 2009-12-10 2015-05-20 株式会社半导体能源研究所 显示装置及其驱动方法
WO2011070901A1 (en) * 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102656683B (zh) 2009-12-11 2015-02-11 株式会社半导体能源研究所 半导体装置
JP5727204B2 (ja) 2009-12-11 2015-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2011070929A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR20170116239A (ko) 2009-12-11 2017-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터
JP5185357B2 (ja) * 2009-12-17 2013-04-17 株式会社半導体エネルギー研究所 半導体装置
US9057758B2 (en) * 2009-12-18 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for measuring current, method for inspecting semiconductor device, semiconductor device, and test element group
KR102275522B1 (ko) 2009-12-18 2021-07-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 기기
KR101763660B1 (ko) 2009-12-18 2017-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 그 구동 방법
CN102668377B (zh) * 2009-12-18 2015-04-08 株式会社半导体能源研究所 非易失性锁存电路和逻辑电路以及使用它们的半导体器件
KR101768433B1 (ko) 2009-12-18 2017-08-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
WO2011074407A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102656625B (zh) 2009-12-18 2016-08-03 株式会社半导体能源研究所 用于驱动液晶显示设备的方法
WO2011074392A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101743620B1 (ko) * 2009-12-18 2017-06-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광 센서를 포함하는 표시 장치 및 그 구동 방법
CN105429621B (zh) 2009-12-23 2019-03-19 株式会社半导体能源研究所 半导体装置
KR20120101716A (ko) 2009-12-24 2012-09-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
WO2011077916A1 (en) 2009-12-24 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device
US8441009B2 (en) * 2009-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011077978A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
CN105789204B (zh) 2009-12-25 2021-11-02 株式会社半导体能源研究所 半导体装置
KR20170142998A (ko) 2009-12-25 2017-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
CN103985760B (zh) 2009-12-25 2017-07-18 株式会社半导体能源研究所 半导体装置
WO2011077925A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for driving liquid crystal display device
CN102714184B (zh) 2009-12-28 2016-05-18 株式会社半导体能源研究所 半导体器件
KR102198144B1 (ko) 2009-12-28 2021-01-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치와 반도체 장치
CN104867984B (zh) 2009-12-28 2018-11-06 株式会社半导体能源研究所 制造半导体装置的方法
CN105353551A (zh) 2009-12-28 2016-02-24 株式会社半导体能源研究所 液晶显示装置及电子设备
KR101842413B1 (ko) * 2009-12-28 2018-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011081041A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR101156434B1 (ko) * 2010-01-05 2012-06-18 삼성모바일디스플레이주식회사 유기 발광 표시 장치
KR101748763B1 (ko) 2010-01-15 2017-06-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
KR102237655B1 (ko) 2010-01-15 2021-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 구동하는 방법
US8780629B2 (en) * 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
WO2011086846A1 (en) * 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102725841B (zh) * 2010-01-15 2016-10-05 株式会社半导体能源研究所 半导体器件
WO2011086871A1 (en) * 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011086847A1 (en) 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105761688B (zh) * 2010-01-20 2019-01-01 株式会社半导体能源研究所 液晶显示设备的驱动方法
CN102713999B (zh) 2010-01-20 2016-01-20 株式会社半导体能源研究所 电子设备和电子系统
KR101722420B1 (ko) 2010-01-20 2017-04-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 휴대 전자 기기
CN102714029B (zh) * 2010-01-20 2016-03-23 株式会社半导体能源研究所 显示装置的显示方法
WO2011089832A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device and liquid crystal display device
US8415731B2 (en) * 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
KR102479269B1 (ko) 2010-01-20 2022-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 휴대 전화기
CN102804603B (zh) 2010-01-20 2015-07-15 株式会社半导体能源研究所 信号处理电路及其驱动方法
US9984617B2 (en) 2010-01-20 2018-05-29 Semiconductor Energy Laboratory Co., Ltd. Display device including light emitting element
IN2012DN05920A (OSRAM) * 2010-01-20 2015-09-18 Semiconductor Energy Lab
WO2011089843A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device
KR101637789B1 (ko) * 2010-01-22 2016-07-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101773641B1 (ko) 2010-01-22 2017-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011089852A1 (en) 2010-01-22 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and driving method thereof
US8879010B2 (en) 2010-01-24 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Display device
KR102135326B1 (ko) 2010-01-24 2020-07-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101805378B1 (ko) 2010-01-24 2017-12-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치와 이의 제조 방법
KR101893904B1 (ko) * 2010-01-29 2018-08-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
CN102714001B (zh) 2010-01-29 2015-11-25 株式会社半导体能源研究所 半导体装置与包含半导体装置的电子装置
WO2011093150A1 (en) 2010-01-29 2011-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011096277A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US8436403B2 (en) 2010-02-05 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor provided with sidewall and electronic appliance
WO2011096153A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2011096270A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011096264A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
WO2011096286A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and semiconductor device
US9391209B2 (en) 2010-02-05 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011096275A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101926336B1 (ko) 2010-02-05 2019-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102172360B1 (ko) 2010-02-05 2020-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
KR101399610B1 (ko) 2010-02-05 2014-05-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제조 방법
KR101810261B1 (ko) 2010-02-10 2017-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터
US8947337B2 (en) 2010-02-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2011099343A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
WO2011099335A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101817054B1 (ko) * 2010-02-12 2018-01-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 포함한 표시 장치
US8617920B2 (en) * 2010-02-12 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102129413B1 (ko) 2010-02-12 2020-07-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 구동 방법
WO2011099389A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
WO2011099336A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR101775180B1 (ko) 2010-02-12 2017-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
WO2011099376A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US9099526B2 (en) * 2010-02-16 2015-08-04 Monolithic 3D Inc. Integrated circuit device and structure
KR102070537B1 (ko) 2010-02-18 2020-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 장치
WO2011102183A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20190102090A (ko) 2010-02-19 2019-09-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터 및 이를 이용한 표시 장치
CN102754163B (zh) * 2010-02-19 2015-11-25 株式会社半导体能源研究所 半导体器件
JP5740169B2 (ja) * 2010-02-19 2015-06-24 株式会社半導体エネルギー研究所 トランジスタの作製方法
CN102763202B (zh) * 2010-02-19 2016-08-03 株式会社半导体能源研究所 半导体装置及其制造方法
CN105786268B (zh) * 2010-02-19 2019-03-12 株式会社半导体能源研究所 显示设备及其驱动方法
KR101780748B1 (ko) * 2010-02-19 2017-09-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 복조회로 및 복조회로를 이용한 ｒｆｉｄ 태그
KR101848684B1 (ko) 2010-02-19 2018-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 장치
WO2011102205A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102754162B (zh) 2010-02-19 2015-12-09 株式会社半导体能源研究所 半导体器件及半导体器件的驱动方法
WO2011102206A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device, driving method thereof, and method for manufacturing semiconductor device
KR101772246B1 (ko) 2010-02-23 2017-08-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 반도체 장치, 및 그 구동 방법
CN102782859B (zh) 2010-02-26 2015-07-29 株式会社半导体能源研究所 半导体装置的制造方法
CN102770903B (zh) * 2010-02-26 2015-10-07 株式会社半导体能源研究所 显示装置及具备该显示装置的电子书阅读器
KR20130009978A (ko) * 2010-02-26 2013-01-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자의 제조 방법 및 성막 장치
US9000438B2 (en) * 2010-02-26 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102113029B1 (ko) * 2010-02-26 2020-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011105198A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN106328085B (zh) * 2010-02-26 2020-07-28 株式会社半导体能源研究所 显示设备及其驱动方法
WO2011105310A1 (en) * 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102358272B1 (ko) 2010-02-26 2022-02-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
CN102783025B (zh) 2010-03-02 2015-10-07 株式会社半导体能源研究所 脉冲信号输出电路和移位寄存器
KR101817926B1 (ko) 2010-03-02 2018-01-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 승압 회로 및 승압 회로를 포함하는 ｒｆｉｄ 태그
KR101798645B1 (ko) * 2010-03-02 2017-11-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 펄스 신호 출력 회로 및 시프트 레지스터
CN105553462B (zh) 2010-03-02 2019-12-13 株式会社半导体能源研究所 脉冲信号输出电路和移位寄存器
KR101932909B1 (ko) * 2010-03-04 2018-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치 및 반도체 장치
WO2011108374A1 (en) * 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2011108346A1 (en) 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor film and manufacturing method of transistor
KR102268217B1 (ko) 2010-03-05 2021-06-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2011111522A1 (en) * 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE112011100841B4 (de) 2010-03-08 2021-11-25 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und verfahren zur herstellung der halbleitervorrichtung
TW201732525A (zh) * 2010-03-08 2017-09-16 半導體能源研究所股份有限公司 電子裝置及電子系統
KR101791253B1 (ko) 2010-03-08 2017-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전자기기 및 전자 시스템
CN102792677B (zh) 2010-03-08 2015-08-05 株式会社半导体能源研究所 半导体器件及其制造方法
KR101898297B1 (ko) 2010-03-08 2018-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
WO2011111505A1 (en) * 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR101761558B1 (ko) * 2010-03-12 2017-07-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 입력 회로를 구동하는 방법 및 입출력 장치를 구동하는 방법
US8900362B2 (en) 2010-03-12 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of gallium oxide single crystal
CN102782622B (zh) * 2010-03-12 2016-11-02 株式会社半导体能源研究所 显示装置的驱动方法
CN102822978B (zh) * 2010-03-12 2015-07-22 株式会社半导体能源研究所 半导体装置及其制造方法
KR101840185B1 (ko) 2010-03-12 2018-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 회로를 구동하는 방법 및 표시 장치를 구동하는 방법
KR101773992B1 (ko) 2010-03-12 2017-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011114866A1 (en) 2010-03-17 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
KR101840797B1 (ko) * 2010-03-19 2018-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치
WO2011114919A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110227082A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101891065B1 (ko) * 2010-03-19 2018-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 구동 방법
WO2011114868A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011118351A1 (en) * 2010-03-25 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5731244B2 (ja) * 2010-03-26 2015-06-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2011118741A1 (en) * 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN102822980B (zh) 2010-03-26 2015-12-16 株式会社半导体能源研究所 半导体装置的制造方法
KR102112065B1 (ko) * 2010-03-26 2020-06-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101862539B1 (ko) * 2010-03-26 2018-05-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011122299A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
KR101761966B1 (ko) 2010-03-31 2017-07-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전력 공급 장치와 그 구동 방법
KR101814367B1 (ko) 2010-03-31 2018-01-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 그 구동 방법
KR20130069583A (ko) 2010-03-31 2013-06-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 필드 시퀀셜 구동형 표시 장치
CN102844873B (zh) 2010-03-31 2015-06-17 株式会社半导体能源研究所 半导体显示装置
US9190522B2 (en) 2010-04-02 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor
KR101391964B1 (ko) 2010-04-02 2014-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011122363A1 (en) 2010-04-02 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9147768B2 (en) 2010-04-02 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor and a metal oxide film
US8884282B2 (en) 2010-04-02 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9196739B2 (en) 2010-04-02 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor film and metal oxide film
WO2011125453A1 (en) 2010-04-07 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Transistor
WO2011125432A1 (en) 2010-04-07 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2011125806A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR101994909B1 (ko) 2010-04-09 2019-07-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8207025B2 (en) 2010-04-09 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
CN102834861B (zh) 2010-04-09 2016-02-10 株式会社半导体能源研究所 液晶显示设备和驱动该液晶显示设备的方法
US8653514B2 (en) 2010-04-09 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011125455A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
WO2011125456A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8854583B2 (en) 2010-04-12 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device
JP5744366B2 (ja) 2010-04-12 2015-07-08 株式会社半導体エネルギー研究所 液晶表示装置
KR101904445B1 (ko) 2010-04-16 2018-10-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2011237418A (ja) 2010-04-16 2011-11-24 Semiconductor Energy Lab Co Ltd 電流測定方法、半導体装置の検査方法、半導体装置、および特性評価用回路
KR20130061678A (ko) 2010-04-16 2013-06-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전원 회로
WO2011129456A1 (en) 2010-04-16 2011-10-20 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing semiconductor device
US8692243B2 (en) 2010-04-20 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011132591A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101887336B1 (ko) 2010-04-23 2018-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 구동 방법
CN104465408B (zh) 2010-04-23 2017-09-15 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
KR102390961B1 (ko) 2010-04-23 2022-04-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
WO2011132529A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9537043B2 (en) 2010-04-23 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
CN102859704B (zh) 2010-04-23 2016-08-03 株式会社半导体能源研究所 半导体装置的制造方法
KR20130055607A (ko) 2010-04-23 2013-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
WO2011135999A1 (en) 2010-04-27 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2011135987A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8890555B2 (en) 2010-04-28 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for measuring transistor
WO2011135988A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and driving method the same
WO2011136018A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic appliance
US9697788B2 (en) 2010-04-28 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9349325B2 (en) 2010-04-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US9064473B2 (en) 2010-05-12 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
US9478185B2 (en) 2010-05-12 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
JP5797449B2 (ja) 2010-05-13 2015-10-21 株式会社半導体エネルギー研究所 半導体装置の評価方法
TWI511236B (zh) 2010-05-14 2015-12-01 Semiconductor Energy Lab 半導體裝置
US8664658B2 (en) 2010-05-14 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011142371A1 (en) 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011142467A1 (en) 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8588000B2 (en) 2010-05-20 2013-11-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device having a reading transistor with a back-gate electrode
US9496405B2 (en) 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
JP5923248B2 (ja) 2010-05-20 2016-05-24 株式会社半導体エネルギー研究所 半導体装置
US9490368B2 (en) 2010-05-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US8624239B2 (en) 2010-05-20 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5714973B2 (ja) 2010-05-21 2015-05-07 株式会社半導体エネルギー研究所 半導体装置
KR20130077839A (ko) 2010-05-21 2013-07-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8629438B2 (en) 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102906980B (zh) 2010-05-21 2015-08-19 株式会社半导体能源研究所 半导体装置及显示装置
WO2011145537A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR101872927B1 (ko) 2010-05-21 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5852793B2 (ja) 2010-05-21 2016-02-03 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
WO2011145633A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011145707A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
WO2011145484A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101808198B1 (ko) 2010-05-21 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP5766012B2 (ja) 2010-05-21 2015-08-19 株式会社半導体エネルギー研究所 液晶表示装置
WO2011145538A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011145468A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
WO2011145634A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5749975B2 (ja) 2010-05-28 2015-07-15 株式会社半導体エネルギー研究所 光検出装置、及び、タッチパネル
US8895375B2 (en) 2010-06-01 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and method for manufacturing the same
WO2011152254A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011152286A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011152233A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8779433B2 (en) 2010-06-04 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011155295A1 (en) 2010-06-10 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Dc/dc converter, power supply circuit, and semiconductor device
US8610180B2 (en) 2010-06-11 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Gas sensor and method for manufacturing the gas sensor
CN102939659B (zh) 2010-06-11 2016-08-17 株式会社半导体能源研究所 半导体器件及半导体器件的制造方法
WO2011155302A1 (en) 2010-06-11 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5797471B2 (ja) 2010-06-16 2015-10-21 株式会社半導体エネルギー研究所 入出力装置
JP5823740B2 (ja) 2010-06-16 2015-11-25 株式会社半導体エネルギー研究所 入出力装置
US9209314B2 (en) 2010-06-16 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
US8637802B2 (en) 2010-06-18 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
US8552425B2 (en) 2010-06-18 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011158704A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011158703A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011162147A1 (en) 2010-06-23 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011162104A1 (en) 2010-06-25 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8912016B2 (en) 2010-06-25 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method and test method of semiconductor device
KR20120000499A (ko) 2010-06-25 2012-01-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터 및 반도체 장치
US9437454B2 (en) 2010-06-29 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Wiring board, semiconductor device, and manufacturing methods thereof
WO2012002104A1 (en) 2010-06-30 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9473714B2 (en) 2010-07-01 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Solid-state imaging device and semiconductor display device
KR101350751B1 (ko) 2010-07-01 2014-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 구동 방법
US8441010B2 (en) 2010-07-01 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9336739B2 (en) 2010-07-02 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8605059B2 (en) 2010-07-02 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Input/output device and driving method thereof
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5792524B2 (ja) 2010-07-02 2015-10-14 株式会社半導体エネルギー研究所 装置
US8642380B2 (en) 2010-07-02 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2012002197A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
TWI541782B (zh) 2010-07-02 2016-07-11 半導體能源研究所股份有限公司 液晶顯示裝置
CN102959713B (zh) 2010-07-02 2017-05-10 株式会社半导体能源研究所 半导体装置
US8766252B2 (en) 2010-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor
KR101850567B1 (ko) 2010-07-16 2018-04-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2012008286A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8785241B2 (en) 2010-07-16 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2012008390A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5917035B2 (ja) 2010-07-26 2016-05-11 株式会社半導体エネルギー研究所 半導体装置
KR102143469B1 (ko) 2010-07-27 2020-08-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2012014790A1 (en) 2010-07-27 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI565001B (zh) 2010-07-28 2017-01-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
JP5846789B2 (ja) 2010-07-29 2016-01-20 株式会社半導体エネルギー研究所 半導体装置
WO2012014786A1 (en) 2010-07-30 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semicondcutor device and manufacturing method thereof
US8537600B2 (en) 2010-08-04 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Low off-state leakage current semiconductor memory device
US8928466B2 (en) 2010-08-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101842181B1 (ko) 2010-08-04 2018-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5739257B2 (ja) 2010-08-05 2015-06-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8582348B2 (en) 2010-08-06 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US8467232B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8467231B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP5671418B2 (ja) 2010-08-06 2015-02-18 株式会社半導体エネルギー研究所 半導体装置の駆動方法
US8803164B2 (en) 2010-08-06 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Solid-state image sensing device and semiconductor display device
WO2012017843A1 (en) 2010-08-06 2012-02-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
TWI545587B (zh) 2010-08-06 2016-08-11 半導體能源研究所股份有限公司 半導體裝置及驅動半導體裝置的方法
JP5832181B2 (ja) 2010-08-06 2015-12-16 株式会社半導体エネルギー研究所 液晶表示装置
KR102006586B1 (ko) 2010-08-06 2019-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI605549B (zh) 2010-08-06 2017-11-11 半導體能源研究所股份有限公司 半導體裝置
US8792284B2 (en) 2010-08-06 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
TWI555128B (zh) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
JP5848912B2 (ja) 2010-08-16 2016-01-27 株式会社半導体エネルギー研究所 液晶表示装置の制御回路、液晶表示装置、及び当該液晶表示装置を具備する電子機器
US9343480B2 (en) 2010-08-16 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI621184B (zh) 2010-08-16 2018-04-11 半導體能源研究所股份有限公司 半導體裝置之製造方法
US9129703B2 (en) 2010-08-16 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor memory device
TWI508294B (zh) 2010-08-19 2015-11-11 Semiconductor Energy Lab 半導體裝置
US8759820B2 (en) 2010-08-20 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8508276B2 (en) 2010-08-25 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including latch circuit
US8883555B2 (en) 2010-08-25 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Electronic device, manufacturing method of electronic device, and sputtering target
US8685787B2 (en) 2010-08-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9058047B2 (en) 2010-08-26 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5727892B2 (ja) 2010-08-26 2015-06-03 株式会社半導体エネルギー研究所 半導体装置
JP2013009285A (ja) 2010-08-26 2013-01-10 Semiconductor Energy Lab Co Ltd 信号処理回路及びその駆動方法
US8592261B2 (en) 2010-08-27 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for designing semiconductor device
US8450123B2 (en) 2010-08-27 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Oxygen diffusion evaluation method of oxide film stacked body
JP5806043B2 (ja) 2010-08-27 2015-11-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5674594B2 (ja) 2010-08-27 2015-02-25 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の駆動方法
JP5763474B2 (ja) 2010-08-27 2015-08-12 株式会社半導体エネルギー研究所 光センサ
US8603841B2 (en) 2010-08-27 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of semiconductor device and light-emitting display device
DE112011102837B4 (de) 2010-08-27 2021-03-11 Semiconductor Energy Laboratory Co., Ltd. Speichereinrichtung und Halbleitereinrichtung mit Doppelgate und Oxidhalbleiter
JP5702689B2 (ja) 2010-08-31 2015-04-15 株式会社半導体エネルギー研究所 半導体装置の駆動方法、及び半導体装置
US8634228B2 (en) 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8575610B2 (en) 2010-09-02 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8728860B2 (en) 2010-09-03 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20130099074A (ko) 2010-09-03 2013-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟 및 반도체 장치의 제작 방법
WO2012029638A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130102581A (ko) 2010-09-03 2013-09-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터 및 반도체 장치의 제조 방법
JP2012256819A (ja) 2010-09-08 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置
US8520426B2 (en) 2010-09-08 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
KR101257734B1 (ko) * 2010-09-08 2013-04-24 엘지디스플레이 주식회사 유기전계발광 표시장치
US8487844B2 (en) 2010-09-08 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device including the same
US9142568B2 (en) 2010-09-10 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting display device
KR101824125B1 (ko) 2010-09-10 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US8797487B2 (en) 2010-09-10 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Transistor, liquid crystal display device, and manufacturing method thereof
US8766253B2 (en) 2010-09-10 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20120026970A (ko) 2010-09-10 2012-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 발광 장치
KR101952235B1 (ko) 2010-09-13 2019-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP5815337B2 (ja) 2010-09-13 2015-11-17 株式会社半導体エネルギー研究所 半導体装置
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9546416B2 (en) 2010-09-13 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Method of forming crystalline oxide semiconductor film
US9496743B2 (en) 2010-09-13 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Power receiving device and wireless power feed system
JP5827520B2 (ja) 2010-09-13 2015-12-02 株式会社半導体エネルギー研究所 半導体記憶装置
US8592879B2 (en) 2010-09-13 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8546161B2 (en) 2010-09-13 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and liquid crystal display device
US8835917B2 (en) 2010-09-13 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power diode, and rectifier
TWI543166B (zh) 2010-09-13 2016-07-21 半導體能源研究所股份有限公司 半導體裝置
US8647919B2 (en) 2010-09-13 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and method for manufacturing the same
KR101872926B1 (ko) 2010-09-13 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101932576B1 (ko) 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2012256821A (ja) 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
US8558960B2 (en) * 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
US8664097B2 (en) 2010-09-13 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
TWI670711B (zh) 2010-09-14 2019-09-01 日商半導體能源研究所股份有限公司 記憶體裝置和半導體裝置
JP2012256012A (ja) 2010-09-15 2012-12-27 Semiconductor Energy Lab Co Ltd 表示装置
WO2012035975A1 (en) 2010-09-15 2012-03-22 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
KR20140054465A (ko) 2010-09-15 2014-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 표시 장치
US9230994B2 (en) 2010-09-15 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8767443B2 (en) 2010-09-22 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for inspecting the same
KR101856722B1 (ko) 2010-09-22 2018-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 파워 절연 게이트형 전계 효과 트랜지스터
US8792260B2 (en) 2010-09-27 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Rectifier circuit and semiconductor device using the same
TWI574259B (zh) 2010-09-29 2017-03-11 半導體能源研究所股份有限公司 半導體記憶體裝置和其驅動方法
CN103299448B (zh) * 2010-09-29 2016-09-07 Posco公司 使用辊形状母基板的柔性电子器件的制造方法、柔性电子器件及柔性基板
TWI620176B (zh) 2010-10-05 2018-04-01 半導體能源研究所股份有限公司 半導體記憶體裝置及其驅動方法
US9437743B2 (en) 2010-10-07 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Thin film element, semiconductor device, and method for manufacturing the same
US8716646B2 (en) 2010-10-08 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for operating the same
US8679986B2 (en) 2010-10-14 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
TWI565079B (zh) 2010-10-20 2017-01-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US8803143B2 (en) 2010-10-20 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including buffer layers with high resistivity
TWI543158B (zh) 2010-10-25 2016-07-21 半導體能源研究所股份有限公司 半導體儲存裝置及其驅動方法
JP5771505B2 (ja) 2010-10-29 2015-09-02 株式会社半導体エネルギー研究所 受信回路
KR101924231B1 (ko) 2010-10-29 2018-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
KR101952456B1 (ko) 2010-10-29 2019-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치
WO2012060428A1 (ja) 2010-11-02 2012-05-10 宇部興産株式会社 （アミドアミノアルカン）金属化合物、及び当該金属化合物を用いた金属含有薄膜の製造方法
US8916866B2 (en) 2010-11-03 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012060202A1 (en) 2010-11-05 2012-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102130257B1 (ko) 2010-11-05 2020-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI555205B (zh) 2010-11-05 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US8957468B2 (en) 2010-11-05 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Variable capacitor and liquid crystal display device
US8569754B2 (en) 2010-11-05 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6010291B2 (ja) 2010-11-05 2016-10-19 株式会社半導体エネルギー研究所 表示装置の駆動方法
US9087744B2 (en) 2010-11-05 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving transistor
US8902637B2 (en) 2010-11-08 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device comprising inverting amplifier circuit and driving method thereof
TWI654764B (zh) 2010-11-11 2019-03-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP5770068B2 (ja) 2010-11-12 2015-08-26 株式会社半導体エネルギー研究所 半導体装置
US8854865B2 (en) 2010-11-24 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8936965B2 (en) 2010-11-26 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8823092B2 (en) 2010-11-30 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8629496B2 (en) 2010-11-30 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI525818B (zh) 2010-11-30 2016-03-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置之製造方法
US8809852B2 (en) 2010-11-30 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
US9103724B2 (en) 2010-11-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device
US8816425B2 (en) 2010-11-30 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8461630B2 (en) 2010-12-01 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5908263B2 (ja) 2010-12-03 2016-04-26 株式会社半導体エネルギー研究所 Ｄｃ−ｄｃコンバータ
TWI590249B (zh) 2010-12-03 2017-07-01 半導體能源研究所股份有限公司 積體電路，其驅動方法，及半導體裝置
WO2012073844A1 (en) 2010-12-03 2012-06-07 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP5856827B2 (ja) 2010-12-09 2016-02-10 株式会社半導体エネルギー研究所 半導体装置
TWI534905B (zh) 2010-12-10 2016-05-21 半導體能源研究所股份有限公司 顯示裝置及顯示裝置之製造方法
JP2012256020A (ja) 2010-12-15 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置及びその駆動方法
US8894825B2 (en) 2010-12-17 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing the same, manufacturing semiconductor device
US9202822B2 (en) 2010-12-17 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2012142562A (ja) 2010-12-17 2012-07-26 Semiconductor Energy Lab Co Ltd 半導体記憶装置
US8730416B2 (en) 2010-12-17 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
US8829512B2 (en) 2010-12-28 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8941112B2 (en) 2010-12-28 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2012090799A1 (en) 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9443984B2 (en) 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5852874B2 (ja) 2010-12-28 2016-02-03 株式会社半導体エネルギー研究所 半導体装置
JP5864054B2 (ja) 2010-12-28 2016-02-17 株式会社半導体エネルギー研究所 半導体装置
US8883556B2 (en) 2010-12-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5731369B2 (ja) 2010-12-28 2015-06-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6030298B2 (ja) 2010-12-28 2016-11-24 株式会社半導体エネルギー研究所 緩衝記憶装置及び信号処理回路
JP2012151453A (ja) 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法
JP5993141B2 (ja) 2010-12-28 2016-09-14 株式会社半導体エネルギー研究所 記憶装置
JP5973165B2 (ja) 2010-12-28 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
US9048142B2 (en) 2010-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI562142B (en) 2011-01-05 2016-12-11 Semiconductor Energy Lab Co Ltd Storage element, storage device, and signal processing circuit
US8912080B2 (en) 2011-01-12 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of the semiconductor device
US8921948B2 (en) 2011-01-12 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI535032B (zh) 2011-01-12 2016-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
TWI570809B (zh) 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8536571B2 (en) 2011-01-12 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8575678B2 (en) 2011-01-13 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device with floating gate
US8421071B2 (en) 2011-01-13 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Memory device
JP5859839B2 (ja) 2011-01-14 2016-02-16 株式会社半導体エネルギー研究所 記憶素子の駆動方法、及び、記憶素子
KR102026718B1 (ko) 2011-01-14 2019-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억장치, 반도체 장치, 검출 방법
TWI572009B (zh) 2011-01-14 2017-02-21 半導體能源研究所股份有限公司 半導體記憶裝置
JP5897910B2 (ja) 2011-01-20 2016-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5798933B2 (ja) 2011-01-26 2015-10-21 株式会社半導体エネルギー研究所 信号処理回路
US9601178B2 (en) 2011-01-26 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
TWI602303B (zh) 2011-01-26 2017-10-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
WO2012102182A1 (en) 2011-01-26 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TW202211311A (zh) 2011-01-26 2022-03-16 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
CN103348464B (zh) 2011-01-26 2016-01-13 株式会社半导体能源研究所 半导体装置及其制造方法
TWI570920B (zh) 2011-01-26 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
WO2012102181A1 (en) 2011-01-27 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI525619B (zh) 2011-01-27 2016-03-11 半導體能源研究所股份有限公司 記憶體電路
US9494829B2 (en) 2011-01-28 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device containing the same
WO2012102281A1 (en) 2011-01-28 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012102314A1 (en) 2011-01-28 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and semiconductor device
US8634230B2 (en) 2011-01-28 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8513773B2 (en) 2011-02-02 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Capacitor and semiconductor device including dielectric and N-type semiconductor
TWI520273B (zh) 2011-02-02 2016-02-01 半導體能源研究所股份有限公司 半導體儲存裝置
US8780614B2 (en) 2011-02-02 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US9799773B2 (en) 2011-02-02 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US9431400B2 (en) 2011-02-08 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for manufacturing the same
US8787083B2 (en) 2011-02-10 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Memory circuit
TWI569041B (zh) 2011-02-14 2017-02-01 半導體能源研究所股份有限公司 顯示裝置
US8975680B2 (en) 2011-02-17 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method manufacturing semiconductor memory device
KR101899880B1 (ko) 2011-02-17 2018-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 ｌｓｉ
US8643007B2 (en) 2011-02-23 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8709920B2 (en) 2011-02-24 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9443455B2 (en) 2011-02-25 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Display device having a plurality of pixels
US9691772B2 (en) 2011-03-03 2017-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including memory cell which includes transistor and capacitor
JP5898527B2 (ja) 2011-03-04 2016-04-06 株式会社半導体エネルギー研究所 半導体装置
US9646829B2 (en) 2011-03-04 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8785933B2 (en) 2011-03-04 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9023684B2 (en) 2011-03-04 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8659015B2 (en) 2011-03-04 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8841664B2 (en) 2011-03-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8659957B2 (en) 2011-03-07 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US8625085B2 (en) 2011-03-08 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Defect evaluation method for semiconductor
US9099437B2 (en) 2011-03-08 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5827145B2 (ja) 2011-03-08 2015-12-02 株式会社半導体エネルギー研究所 信号処理回路
US8541781B2 (en) 2011-03-10 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8772849B2 (en) 2011-03-10 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2012121265A1 (en) 2011-03-10 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for manufacturing the same
TWI624878B (zh) 2011-03-11 2018-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
TWI521612B (zh) 2011-03-11 2016-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8760903B2 (en) 2011-03-11 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Storage circuit
JP2012209543A (ja) 2011-03-11 2012-10-25 Semiconductor Energy Lab Co Ltd 半導体装置
JP5933300B2 (ja) 2011-03-16 2016-06-08 株式会社半導体エネルギー研究所 半導体装置
JP5933897B2 (ja) 2011-03-18 2016-06-15 株式会社半導体エネルギー研究所 半導体装置
KR101995682B1 (ko) 2011-03-18 2019-07-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막, 반도체 장치, 및 반도체 장치의 제작 방법
US8859330B2 (en) 2011-03-23 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5839474B2 (ja) 2011-03-24 2016-01-06 株式会社半導体エネルギー研究所 信号処理回路
US9219159B2 (en) 2011-03-25 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
US8956944B2 (en) 2011-03-25 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI545652B (zh) 2011-03-25 2016-08-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8987728B2 (en) 2011-03-25 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US9012904B2 (en) 2011-03-25 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8686416B2 (en) 2011-03-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
TWI538215B (zh) 2011-03-25 2016-06-11 半導體能源研究所股份有限公司 場效電晶體及包含該場效電晶體之記憶體與半導體電路
JP6053098B2 (ja) 2011-03-28 2016-12-27 株式会社半導体エネルギー研究所 半導体装置
US8927329B2 (en) 2011-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device with improved electronic properties
JP5879165B2 (ja) 2011-03-30 2016-03-08 株式会社半導体エネルギー研究所 半導体装置
US9082860B2 (en) 2011-03-31 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8686486B2 (en) 2011-03-31 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Memory device
TWI567735B (zh) 2011-03-31 2017-01-21 半導體能源研究所股份有限公司 記憶體電路，記憶體單元，及訊號處理電路
JP5982147B2 (ja) 2011-04-01 2016-08-31 株式会社半導体エネルギー研究所 発光装置
US8541266B2 (en) 2011-04-01 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9960278B2 (en) 2011-04-06 2018-05-01 Yuhei Sato Manufacturing method of semiconductor device
US9012905B2 (en) 2011-04-08 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
TWI567736B (zh) 2011-04-08 2017-01-21 半導體能源研究所股份有限公司 記憶體元件及信號處理電路
US9093538B2 (en) 2011-04-08 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2012256406A (ja) 2011-04-08 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置、及び当該記憶装置を用いた半導体装置
US9478668B2 (en) 2011-04-13 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US8854867B2 (en) 2011-04-13 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method of the memory device
JP5883699B2 (ja) 2011-04-13 2016-03-15 株式会社半導体エネルギー研究所 プログラマブルｌｓｉ
JP6045176B2 (ja) 2011-04-15 2016-12-14 株式会社半導体エネルギー研究所 半導体装置
US8878174B2 (en) 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit
US9070776B2 (en) 2011-04-15 2015-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8779488B2 (en) 2011-04-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP6001900B2 (ja) 2011-04-21 2016-10-05 株式会社半導体エネルギー研究所 信号処理回路
US8809854B2 (en) 2011-04-22 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9331206B2 (en) 2011-04-22 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Oxide material and semiconductor device
US8932913B2 (en) 2011-04-22 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
TWI548057B (zh) 2011-04-22 2016-09-01 半導體能源研究所股份有限公司 半導體裝置
US8878288B2 (en) 2011-04-22 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916868B2 (en) 2011-04-22 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9006803B2 (en) 2011-04-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
JP5946683B2 (ja) 2011-04-22 2016-07-06 株式会社半導体エネルギー研究所 半導体装置
US10079053B2 (en) 2011-04-22 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Memory element and memory device
CN102760697B (zh) 2011-04-27 2016-08-03 株式会社半导体能源研究所 半导体装置的制造方法
US8729545B2 (en) 2011-04-28 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
KR101919056B1 (ko) 2011-04-28 2018-11-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 회로
US9935622B2 (en) 2011-04-28 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Comparator and semiconductor device including comparator
US8681533B2 (en) 2011-04-28 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Memory circuit, signal processing circuit, and electronic device
US8476927B2 (en) 2011-04-29 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8785923B2 (en) 2011-04-29 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9111795B2 (en) 2011-04-29 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor connected to memory element through oxide semiconductor film
US9614094B2 (en) 2011-04-29 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer and method for driving the same
KR101963457B1 (ko) 2011-04-29 2019-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치 및 그 구동 방법
TWI525615B (zh) 2011-04-29 2016-03-11 半導體能源研究所股份有限公司 半導體儲存裝置
US8848464B2 (en) 2011-04-29 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US8446171B2 (en) 2011-04-29 2013-05-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing unit
TWI743509B (zh) 2011-05-05 2021-10-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9117701B2 (en) 2011-05-06 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101874144B1 (ko) 2011-05-06 2018-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
TWI568181B (zh) 2011-05-06 2017-01-21 半導體能源研究所股份有限公司 邏輯電路及半導體裝置
US8709922B2 (en) 2011-05-06 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8809928B2 (en) 2011-05-06 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and method for manufacturing the semiconductor device
WO2012153473A1 (en) 2011-05-06 2012-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9443844B2 (en) 2011-05-10 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Gain cell semiconductor memory device and driving method thereof
US8946066B2 (en) 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI541978B (zh) 2011-05-11 2016-07-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置之驅動方法
US8847233B2 (en) 2011-05-12 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film
TWI557711B (zh) 2011-05-12 2016-11-11 半導體能源研究所股份有限公司 顯示裝置的驅動方法
JP5886128B2 (ja) 2011-05-13 2016-03-16 株式会社半導体エネルギー研究所 半導体装置
KR101921772B1 (ko) 2011-05-13 2018-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9048788B2 (en) 2011-05-13 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photoelectric conversion portion
US9105749B2 (en) 2011-05-13 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9466618B2 (en) 2011-05-13 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including two thin film transistors and method of manufacturing the same
WO2012157472A1 (en) 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9093539B2 (en) 2011-05-13 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6109489B2 (ja) 2011-05-13 2017-04-05 株式会社半導体エネルギー研究所 Ｅｌ表示装置
JP6013773B2 (ja) 2011-05-13 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
US9397222B2 (en) 2011-05-13 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP5886127B2 (ja) 2011-05-13 2016-03-16 株式会社半導体エネルギー研究所 半導体装置
TWI536502B (zh) 2011-05-13 2016-06-01 半導體能源研究所股份有限公司 記憶體電路及電子裝置
DE112012002113T5 (de) 2011-05-16 2014-02-13 Semiconductor Energy Laboratory Co., Ltd. Programmierbarer Logikbaustein
TWI570891B (zh) 2011-05-17 2017-02-11 半導體能源研究所股份有限公司 半導體裝置
TWI552150B (zh) 2011-05-18 2016-10-01 半導體能源研究所股份有限公司 半導體儲存裝置
TWI571058B (zh) 2011-05-18 2017-02-11 半導體能源研究所股份有限公司 半導體裝置與驅動半導體裝置之方法
KR101991735B1 (ko) 2011-05-19 2019-06-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
US8779799B2 (en) 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
US8581625B2 (en) 2011-05-19 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
KR102093909B1 (ko) 2011-05-19 2020-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 회로 및 회로의 구동 방법
KR102081792B1 (ko) 2011-05-19 2020-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 연산회로 및 연산회로의 구동방법
JP6014362B2 (ja) 2011-05-19 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8837203B2 (en) 2011-05-19 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6006975B2 (ja) 2011-05-19 2016-10-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5947099B2 (ja) 2011-05-20 2016-07-06 株式会社半導体エネルギー研究所 半導体装置
US9336845B2 (en) 2011-05-20 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Register circuit including a volatile memory and a nonvolatile memory
US8508256B2 (en) 2011-05-20 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
JP5892852B2 (ja) 2011-05-20 2016-03-23 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
TWI614995B (zh) 2011-05-20 2018-02-11 半導體能源研究所股份有限公司 鎖相迴路及使用此鎖相迴路之半導體裝置
JP6013680B2 (ja) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
JP5951351B2 (ja) 2011-05-20 2016-07-13 株式会社半導体エネルギー研究所 加算器及び全加算器
JP6013682B2 (ja) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
KR101922397B1 (ko) 2011-05-20 2018-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6091083B2 (ja) 2011-05-20 2017-03-08 株式会社半導体エネルギー研究所 記憶装置
JP5820335B2 (ja) 2011-05-20 2015-11-24 株式会社半導体エネルギー研究所 半導体装置
TWI559683B (zh) 2011-05-20 2016-11-21 半導體能源研究所股份有限公司 半導體積體電路
TWI570719B (zh) 2011-05-20 2017-02-11 半導體能源研究所股份有限公司 儲存裝置及信號處理電路
JP5936908B2 (ja) 2011-05-20 2016-06-22 株式会社半導体エネルギー研究所 パリティビット出力回路およびパリティチェック回路
JP6030334B2 (ja) 2011-05-20 2016-11-24 株式会社半導体エネルギー研究所 記憶装置
JP5820336B2 (ja) 2011-05-20 2015-11-24 株式会社半導体エネルギー研究所 半導体装置
TWI557739B (zh) 2011-05-20 2016-11-11 半導體能源研究所股份有限公司 半導體積體電路
JP6082189B2 (ja) 2011-05-20 2017-02-15 株式会社半導体エネルギー研究所 記憶装置及び信号処理回路
JP5886496B2 (ja) 2011-05-20 2016-03-16 株式会社半導体エネルギー研究所 半導体装置
CN102789808B (zh) 2011-05-20 2018-03-06 株式会社半导体能源研究所 存储器装置和用于驱动存储器装置的方法
WO2012161059A1 (en) 2011-05-20 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US20120298998A1 (en) 2011-05-25 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
US9171840B2 (en) 2011-05-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101912971B1 (ko) 2011-05-26 2018-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 분주 회로 및 분주 회로를 이용한 반도체 장치
US8610482B2 (en) 2011-05-27 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Trimming circuit and method for driving trimming circuit
US8669781B2 (en) 2011-05-31 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5912844B2 (ja) 2011-05-31 2016-04-27 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
US9467047B2 (en) 2011-05-31 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, power source circuit, and semiconductor device
KR102492593B1 (ko) 2011-06-08 2023-01-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟, 스퍼터링 타겟의 제조 방법 및 박막의 형성 방법
JP5890251B2 (ja) 2011-06-08 2016-03-22 株式会社半導体エネルギー研究所 通信方法
JP2013016243A (ja) 2011-06-09 2013-01-24 Semiconductor Energy Lab Co Ltd 記憶装置
US8958263B2 (en) 2011-06-10 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6104522B2 (ja) 2011-06-10 2017-03-29 株式会社半導体エネルギー研究所 半導体装置
US20120313118A1 (en) * 2011-06-10 2012-12-13 Emagin Corporation Active-matrix organic light-emitting diode display device with short protection
JP6005401B2 (ja) 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8891285B2 (en) 2011-06-10 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP6009226B2 (ja) 2011-06-10 2016-10-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9299852B2 (en) 2011-06-16 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI557910B (zh) 2011-06-16 2016-11-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8804405B2 (en) 2011-06-16 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
WO2012172746A1 (en) 2011-06-17 2012-12-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20130007426A (ko) 2011-06-17 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US9166055B2 (en) 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9099885B2 (en) 2011-06-17 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Wireless power feeding system
US8901554B2 (en) 2011-06-17 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including channel formation region including oxide semiconductor
US8673426B2 (en) 2011-06-29 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
US8878589B2 (en) 2011-06-30 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9130044B2 (en) 2011-07-01 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9385238B2 (en) 2011-07-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Transistor using oxide semiconductor
US9490241B2 (en) 2011-07-08 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a first inverter and a second inverter
US9496138B2 (en) 2011-07-08 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device
TWI565067B (zh) 2011-07-08 2017-01-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9214474B2 (en) 2011-07-08 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR102014876B1 (ko) 2011-07-08 2019-08-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8748886B2 (en) 2011-07-08 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8836626B2 (en) 2011-07-15 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8847220B2 (en) 2011-07-15 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013042117A (ja) 2011-07-15 2013-02-28 Semiconductor Energy Lab Co Ltd 半導体装置
US9200952B2 (en) 2011-07-15 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photodetector and an analog arithmetic circuit
US8946812B2 (en) 2011-07-21 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9012993B2 (en) 2011-07-22 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6013685B2 (ja) 2011-07-22 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
US8643008B2 (en) 2011-07-22 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8716073B2 (en) 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device
CN103688303B (zh) 2011-07-22 2016-08-17 株式会社半导体能源研究所 发光装置及其驱动方法
US8718224B2 (en) 2011-08-05 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US8994019B2 (en) 2011-08-05 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9034674B2 (en) 2011-08-08 2015-05-19 Quarkstar Llc Method and apparatus for coupling light-emitting elements with light-converting material
JP6006572B2 (ja) 2011-08-18 2016-10-12 株式会社半導体エネルギー研究所 半導体装置
JP6128775B2 (ja) 2011-08-19 2017-05-17 株式会社半導体エネルギー研究所 半導体装置
TWI575494B (zh) 2011-08-19 2017-03-21 半導體能源研究所股份有限公司 半導體裝置的驅動方法
JP6116149B2 (ja) 2011-08-24 2017-04-19 株式会社半導体エネルギー研究所 半導体装置
TWI621243B (zh) 2011-08-29 2018-04-11 半導體能源研究所股份有限公司 半導體裝置
US9252279B2 (en) 2011-08-31 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9660092B2 (en) 2011-08-31 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor including oxygen release layer
JP6016532B2 (ja) 2011-09-07 2016-10-26 株式会社半導体エネルギー研究所 半導体装置
JP6050054B2 (ja) 2011-09-09 2016-12-21 株式会社半導体エネルギー研究所 半導体装置
US8802493B2 (en) 2011-09-13 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor device
JP5825744B2 (ja) 2011-09-15 2015-12-02 株式会社半導体エネルギー研究所 パワー絶縁ゲート型電界効果トランジスタ
US9082663B2 (en) 2011-09-16 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8952379B2 (en) 2011-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013039126A1 (en) 2011-09-16 2013-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5832399B2 (ja) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 発光装置
CN103022012B (zh) 2011-09-21 2017-03-01 株式会社半导体能源研究所 半导体存储装置
KR101976228B1 (ko) 2011-09-22 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광 검출 장치 및 광 검출 장치의 구동 방법
WO2013042562A1 (en) 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8841675B2 (en) 2011-09-23 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Minute transistor
US9431545B2 (en) 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102108572B1 (ko) 2011-09-26 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP2013084333A (ja) 2011-09-28 2013-05-09 Semiconductor Energy Lab Co Ltd シフトレジスタ回路
KR101506303B1 (ko) 2011-09-29 2015-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제작 방법
US8716708B2 (en) 2011-09-29 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
SG11201505099TA (en) 2011-09-29 2015-08-28 Semiconductor Energy Lab Semiconductor device
SG11201505088UA (en) 2011-09-29 2015-08-28 Semiconductor Energy Lab Semiconductor device
JP5806905B2 (ja) 2011-09-30 2015-11-10 株式会社半導体エネルギー研究所 半導体装置
US8982607B2 (en) 2011-09-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
US20130087784A1 (en) 2011-10-05 2013-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2013093561A (ja) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd 酸化物半導体膜及び半導体装置
JP6022880B2 (ja) 2011-10-07 2016-11-09 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US10014068B2 (en) 2011-10-07 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9117916B2 (en) 2011-10-13 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
US9018629B2 (en) 2011-10-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9287405B2 (en) 2011-10-13 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
JP5912394B2 (ja) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 半導体装置
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP6026839B2 (ja) 2011-10-13 2016-11-16 株式会社半導体エネルギー研究所 半導体装置
WO2013054933A1 (en) 2011-10-14 2013-04-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130040706A (ko) 2011-10-14 2013-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR20130043063A (ko) 2011-10-19 2013-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
TWI567985B (zh) 2011-10-21 2017-01-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP6045285B2 (ja) 2011-10-24 2016-12-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101976212B1 (ko) 2011-10-24 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP6226518B2 (ja) 2011-10-24 2017-11-08 株式会社半導体エネルギー研究所 半導体装置
KR20130046357A (ko) 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6082562B2 (ja) 2011-10-27 2017-02-15 株式会社半導体エネルギー研究所 半導体装置
WO2013061895A1 (en) 2011-10-28 2013-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102012981B1 (ko) 2011-11-09 2019-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5933895B2 (ja) 2011-11-10 2016-06-15 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
WO2013069548A1 (en) 2011-11-11 2013-05-16 Semiconductor Energy Laboratory Co., Ltd. Signal line driver circuit and liquid crystal display device
US9082861B2 (en) 2011-11-11 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Transistor with oxide semiconductor channel having protective layer
US8796682B2 (en) 2011-11-11 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JP6122275B2 (ja) 2011-11-11 2017-04-26 株式会社半導体エネルギー研究所 表示装置
US8878177B2 (en) 2011-11-11 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP6076038B2 (ja) 2011-11-11 2017-02-08 株式会社半導体エネルギー研究所 表示装置の作製方法
US8969130B2 (en) 2011-11-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof
US10026847B2 (en) 2011-11-18 2018-07-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, method for manufacturing semiconductor element, and semiconductor device including semiconductor element
US8951899B2 (en) 2011-11-25 2015-02-10 Semiconductor Energy Laboratory Method for manufacturing semiconductor device
US8829528B2 (en) * 2011-11-25 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including groove portion extending beyond pixel electrode
US8772094B2 (en) 2011-11-25 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8962386B2 (en) 2011-11-25 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6099368B2 (ja) 2011-11-25 2017-03-22 株式会社半導体エネルギー研究所 記憶装置
US9057126B2 (en) 2011-11-29 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target and method for manufacturing semiconductor device
TWI591611B (zh) 2011-11-30 2017-07-11 半導體能源研究所股份有限公司 半導體顯示裝置
KR102072244B1 (ko) 2011-11-30 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN103137701B (zh) 2011-11-30 2018-01-19 株式会社半导体能源研究所 晶体管及半导体装置
US9076871B2 (en) 2011-11-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20130137232A1 (en) 2011-11-30 2013-05-30 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
TWI669760B (zh) 2011-11-30 2019-08-21 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
TWI621185B (zh) 2011-12-01 2018-04-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013137853A (ja) 2011-12-02 2013-07-11 Semiconductor Energy Lab Co Ltd 記憶装置および記憶装置の駆動方法
EP2786404A4 (en) 2011-12-02 2015-07-15 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
JP6050662B2 (ja) 2011-12-02 2016-12-21 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US9257422B2 (en) 2011-12-06 2016-02-09 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving signal processing circuit
JP6081171B2 (ja) 2011-12-09 2017-02-15 株式会社半導体エネルギー研究所 記憶装置
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
JP6105266B2 (ja) 2011-12-15 2017-03-29 株式会社半導体エネルギー研究所 記憶装置
KR102084274B1 (ko) 2011-12-15 2020-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2013149953A (ja) 2011-12-20 2013-08-01 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
US8785258B2 (en) 2011-12-20 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2013130802A (ja) 2011-12-22 2013-07-04 Semiconductor Energy Lab Co Ltd 半導体装置、画像表示装置、記憶装置、及び電子機器
US8748240B2 (en) 2011-12-22 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
JP6012450B2 (ja) 2011-12-23 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
TWI569446B (zh) 2011-12-23 2017-02-01 半導體能源研究所股份有限公司 半導體元件、半導體元件的製造方法、及包含半導體元件的半導體裝置
JP6053490B2 (ja) 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI580189B (zh) 2011-12-23 2017-04-21 半導體能源研究所股份有限公司 位準位移電路及半導體積體電路
US8704221B2 (en) 2011-12-23 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6033071B2 (ja) 2011-12-23 2016-11-30 株式会社半導体エネルギー研究所 半導体装置
WO2013094547A1 (en) 2011-12-23 2013-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI580047B (zh) 2011-12-23 2017-04-21 半導體能源研究所股份有限公司 半導體裝置
WO2013099537A1 (en) 2011-12-26 2013-07-04 Semiconductor Energy Laboratory Co., Ltd. Motion recognition device
TWI584383B (zh) 2011-12-27 2017-05-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102100425B1 (ko) 2011-12-27 2020-04-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR20130078025A (ko) * 2011-12-30 2013-07-10 코오롱인더스트리 주식회사 레이저 열전사 방법용 도너필름
KR102103913B1 (ko) 2012-01-10 2020-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8836555B2 (en) 2012-01-18 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Circuit, sensor circuit, and semiconductor device using the sensor circuit
US8969867B2 (en) 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9040981B2 (en) 2012-01-20 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102097171B1 (ko) 2012-01-20 2020-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9099560B2 (en) 2012-01-20 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102433736B1 (ko) 2012-01-23 2022-08-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9653614B2 (en) 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20220088814A (ko) 2012-01-25 2022-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
TWI581431B (zh) 2012-01-26 2017-05-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
JP6091905B2 (ja) 2012-01-26 2017-03-08 株式会社半導体エネルギー研究所 半導体装置
US9419146B2 (en) 2012-01-26 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9006733B2 (en) 2012-01-26 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US8956912B2 (en) 2012-01-26 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI561951B (en) 2012-01-30 2016-12-11 Semiconductor Energy Lab Co Ltd Power supply circuit
TWI562361B (en) 2012-02-02 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device
KR102101167B1 (ko) 2012-02-03 2020-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9196741B2 (en) 2012-02-03 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9362417B2 (en) 2012-02-03 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916424B2 (en) 2012-02-07 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9859114B2 (en) 2012-02-08 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device with an oxygen-controlling insulating layer
JP6125850B2 (ja) 2012-02-09 2017-05-10 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US20130207111A1 (en) 2012-02-09 2013-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device
JP5981157B2 (ja) 2012-02-09 2016-08-31 株式会社半導体エネルギー研究所 半導体装置
US9112037B2 (en) 2012-02-09 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8817516B2 (en) 2012-02-17 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Memory circuit and semiconductor device
JP2014063557A (ja) 2012-02-24 2014-04-10 Semiconductor Energy Lab Co Ltd 記憶装置及び半導体装置
US20130221345A1 (en) 2012-02-28 2013-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6151530B2 (ja) 2012-02-29 2017-06-21 株式会社半導体エネルギー研究所 イメージセンサ、カメラ、及び監視システム
US9312257B2 (en) 2012-02-29 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8988152B2 (en) 2012-02-29 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9553200B2 (en) 2012-02-29 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6046514B2 (ja) 2012-03-01 2016-12-14 株式会社半導体エネルギー研究所 半導体装置
US8975917B2 (en) 2012-03-01 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
JP2013183001A (ja) 2012-03-01 2013-09-12 Semiconductor Energy Lab Co Ltd 半導体装置
US9176571B2 (en) 2012-03-02 2015-11-03 Semiconductor Energy Laboratories Co., Ltd. Microprocessor and method for driving microprocessor
US9287370B2 (en) 2012-03-02 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Memory device comprising a transistor including an oxide semiconductor and semiconductor device including the same
US9735280B2 (en) 2012-03-02 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film
JP6100559B2 (ja) 2012-03-05 2017-03-22 株式会社半導体エネルギー研究所 半導体記憶装置
JP6041707B2 (ja) 2012-03-05 2016-12-14 株式会社半導体エネルギー研究所 ラッチ回路および半導体装置
US8995218B2 (en) 2012-03-07 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8981370B2 (en) 2012-03-08 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN107340509B (zh) 2012-03-09 2020-04-14 株式会社半导体能源研究所 半导体装置的驱动方法
WO2013137014A1 (en) 2012-03-13 2013-09-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for driving the same
US9058892B2 (en) 2012-03-14 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and shift register
KR102108248B1 (ko) 2012-03-14 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막, 트랜지스터, 및 반도체 장치
US9117409B2 (en) 2012-03-14 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device with transistor and capacitor discharging gate of driving electrode and oxide semiconductor layer
JP6168795B2 (ja) 2012-03-14 2017-07-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9541386B2 (en) 2012-03-21 2017-01-10 Semiconductor Energy Laboratory Co., Ltd. Distance measurement device and distance measurement system
US9324449B2 (en) 2012-03-28 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device
JP6169376B2 (ja) 2012-03-28 2017-07-26 株式会社半導体エネルギー研究所 電池管理ユニット、保護回路、蓄電装置
US9349849B2 (en) 2012-03-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the semiconductor device
JP6139187B2 (ja) 2012-03-29 2017-05-31 株式会社半導体エネルギー研究所 半導体装置
US9786793B2 (en) 2012-03-29 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer including regions with different concentrations of resistance-reducing elements
JP2013229013A (ja) 2012-03-29 2013-11-07 Semiconductor Energy Lab Co Ltd アレイコントローラ及びストレージシステム
KR102044725B1 (ko) 2012-03-29 2019-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전원 제어 장치
US8941113B2 (en) 2012-03-30 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
US8999773B2 (en) 2012-04-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Processing method of stacked-layer film and manufacturing method of semiconductor device
JP2013232885A (ja) 2012-04-06 2013-11-14 Semiconductor Energy Lab Co Ltd 半導体リレー
US9793444B2 (en) 2012-04-06 2017-10-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9711110B2 (en) 2012-04-06 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Display device comprising grayscale conversion portion and display portion
US8901556B2 (en) 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
JP5975907B2 (ja) 2012-04-11 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
JP2013236068A (ja) 2012-04-12 2013-11-21 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
US9208849B2 (en) 2012-04-12 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device, and electronic device
JP6128906B2 (ja) 2012-04-13 2017-05-17 株式会社半導体エネルギー研究所 半導体装置
JP6059566B2 (ja) 2012-04-13 2017-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102254731B1 (ko) 2012-04-13 2021-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9030232B2 (en) 2012-04-13 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Isolator circuit and semiconductor device
JP6143423B2 (ja) 2012-04-16 2017-06-07 株式会社半導体エネルギー研究所 半導体装置の製造方法
JP6001308B2 (ja) 2012-04-17 2016-10-05 株式会社半導体エネルギー研究所 半導体装置
JP6076612B2 (ja) 2012-04-17 2017-02-08 株式会社半導体エネルギー研究所 半導体装置
US9029863B2 (en) 2012-04-20 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9219164B2 (en) 2012-04-20 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor channel
US9230683B2 (en) 2012-04-25 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9236408B2 (en) 2012-04-25 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including photodiode
US9006024B2 (en) 2012-04-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9285848B2 (en) 2012-04-27 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Power reception control device, power reception device, power transmission and reception system, and electronic device
US8860022B2 (en) 2012-04-27 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9331689B2 (en) 2012-04-27 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Power supply circuit and semiconductor device including the same
JP6199583B2 (ja) 2012-04-27 2017-09-20 株式会社半導体エネルギー研究所 半導体装置
JP6228381B2 (ja) 2012-04-30 2017-11-08 株式会社半導体エネルギー研究所 半導体装置
JP6100071B2 (ja) 2012-04-30 2017-03-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9048323B2 (en) 2012-04-30 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9703704B2 (en) 2012-05-01 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9007090B2 (en) 2012-05-01 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of driving semiconductor device
JP6035195B2 (ja) 2012-05-01 2016-11-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102025722B1 (ko) 2012-05-02 2019-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 온도 센서 회로, 및 온도 센서 회로를 사용한 반도체 장치
US8866510B2 (en) 2012-05-02 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013250965A (ja) 2012-05-02 2013-12-12 Semiconductor Energy Lab Co Ltd 半導体装置およびその駆動方法
JP6227890B2 (ja) 2012-05-02 2017-11-08 株式会社半導体エネルギー研究所 信号処理回路および制御回路
JP6100076B2 (ja) 2012-05-02 2017-03-22 株式会社半導体エネルギー研究所 プロセッサ
DE112013002281T5 (de) 2012-05-02 2015-03-05 Semiconductor Energy Laboratory Co., Ltd. Programmierbare Logikvorrichtung
JP6243136B2 (ja) 2012-05-02 2017-12-06 株式会社半導体エネルギー研究所 スイッチングコンバータ
KR20130125717A (ko) 2012-05-09 2013-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
CN104285302B (zh) 2012-05-10 2017-08-22 株式会社半导体能源研究所 半导体装置
KR102891145B1 (ko) 2012-05-10 2025-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102069158B1 (ko) 2012-05-10 2020-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 배선의 형성 방법, 반도체 장치, 및 반도체 장치의 제작 방법
DE102013207324A1 (de) 2012-05-11 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und elektronisches Gerät
KR102087443B1 (ko) 2012-05-11 2020-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
TWI670553B (zh) 2012-05-16 2019-09-01 日商半導體能源研究所股份有限公司 半導體裝置及觸控面板
US8929128B2 (en) 2012-05-17 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Storage device and writing method of the same
US9817032B2 (en) 2012-05-23 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Measurement device
JP2014003594A (ja) 2012-05-25 2014-01-09 Semiconductor Energy Lab Co Ltd 半導体装置及びその駆動方法
JP6050721B2 (ja) 2012-05-25 2016-12-21 株式会社半導体エネルギー研究所 半導体装置
KR102059218B1 (ko) 2012-05-25 2019-12-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 로직 디바이스 및 반도체 장치
KR102164990B1 (ko) 2012-05-25 2020-10-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 소자의 구동 방법
JP6250955B2 (ja) 2012-05-25 2017-12-20 株式会社半導体エネルギー研究所 半導体装置の駆動方法
US9147706B2 (en) 2012-05-29 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having sensor circuit having amplifier circuit
JP6377317B2 (ja) 2012-05-30 2018-08-22 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
JP6158588B2 (ja) 2012-05-31 2017-07-05 株式会社半導体エネルギー研究所 発光装置
WO2013179922A1 (en) 2012-05-31 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9048265B2 (en) 2012-05-31 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising oxide semiconductor layer
KR102071545B1 (ko) 2012-05-31 2020-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8995607B2 (en) 2012-05-31 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US8785928B2 (en) 2012-05-31 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013180016A1 (en) 2012-06-01 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and alarm device
JP6108960B2 (ja) 2012-06-01 2017-04-05 株式会社半導体エネルギー研究所 半導体装置、処理装置
US8872174B2 (en) 2012-06-01 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9135182B2 (en) 2012-06-01 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Central processing unit and driving method thereof
US9916793B2 (en) 2012-06-01 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving the same
JP2014027263A (ja) 2012-06-15 2014-02-06 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US8901557B2 (en) 2012-06-15 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9059219B2 (en) 2012-06-27 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9742378B2 (en) 2012-06-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit and semiconductor device
TWI596778B (zh) 2012-06-29 2017-08-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
CN104380444A (zh) 2012-06-29 2015-02-25 株式会社半导体能源研究所 半导体装置
KR102082794B1 (ko) 2012-06-29 2020-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법, 및 표시 장치
US8873308B2 (en) 2012-06-29 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
KR102161077B1 (ko) 2012-06-29 2020-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9083327B2 (en) 2012-07-06 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
JP6310194B2 (ja) 2012-07-06 2018-04-11 株式会社半導体エネルギー研究所 半導体装置
US9054678B2 (en) 2012-07-06 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR102099262B1 (ko) 2012-07-11 2020-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치, 및 액정 표시 장치의 구동 방법
JP2014032399A (ja) 2012-07-13 2014-02-20 Semiconductor Energy Lab Co Ltd 液晶表示装置
JP6006558B2 (ja) 2012-07-17 2016-10-12 株式会社半導体エネルギー研究所 半導体装置及びその製造方法
KR20250131267A (ko) 2012-07-20 2025-09-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR102475812B1 (ko) 2012-07-20 2022-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
WO2014014039A1 (en) 2012-07-20 2014-01-23 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the display device
JP6185311B2 (ja) 2012-07-20 2017-08-23 株式会社半導体エネルギー研究所 電源制御回路、及び信号処理回路
KR20140013931A (ko) 2012-07-26 2014-02-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
JP2014042004A (ja) 2012-07-26 2014-03-06 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP6224931B2 (ja) 2012-07-27 2017-11-01 株式会社半導体エネルギー研究所 半導体装置
JP2014045175A (ja) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd 半導体装置
JP6134598B2 (ja) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 半導体装置
KR102354212B1 (ko) 2012-08-03 2022-01-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
SG10201700805WA (en) 2012-08-03 2017-02-27 Semiconductor Energy Lab Co Ltd Oxide semiconductor stacked film and semiconductor device
US9885108B2 (en) 2012-08-07 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming sputtering target
US10557192B2 (en) 2012-08-07 2020-02-11 Semiconductor Energy Laboratory Co., Ltd. Method for using sputtering target and method for forming oxide film
JP6220597B2 (ja) 2012-08-10 2017-10-25 株式会社半導体エネルギー研究所 半導体装置
JP2014057298A (ja) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
JP6211843B2 (ja) 2012-08-10 2017-10-11 株式会社半導体エネルギー研究所 半導体装置
CN108305895B (zh) 2012-08-10 2021-08-03 株式会社半导体能源研究所 半导体装置及其制造方法
US9245958B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8937307B2 (en) 2012-08-10 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014057296A (ja) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
US9929276B2 (en) 2012-08-10 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI581404B (zh) 2012-08-10 2017-05-01 半導體能源研究所股份有限公司 半導體裝置以及該半導體裝置的驅動方法
JP2014199899A (ja) 2012-08-10 2014-10-23 株式会社半導体エネルギー研究所 半導体装置
KR102171650B1 (ko) 2012-08-10 2020-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8872120B2 (en) 2012-08-23 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and method for driving the same
KR102069683B1 (ko) 2012-08-24 2020-01-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 방사선 검출 패널, 방사선 촬상 장치, 및 화상 진단 장치
DE102013216824B4 (de) 2012-08-28 2024-10-17 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
US9625764B2 (en) 2012-08-28 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
KR102161078B1 (ko) 2012-08-28 2020-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제작 방법
JP5562384B2 (ja) * 2012-08-28 2014-07-30 キヤノン株式会社 薄膜トランジスタおよびその製造方法
KR20140029202A (ko) 2012-08-28 2014-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
TWI657539B (zh) 2012-08-31 2019-04-21 日商半導體能源研究所股份有限公司 半導體裝置
GB2505499B (en) 2012-09-03 2017-03-08 Dst Innovations Ltd Electroluminescent displays and lighting
KR102088865B1 (ko) 2012-09-03 2020-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 마이크로 컨트롤러
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
DE102013217278B4 (de) 2012-09-12 2017-03-30 Semiconductor Energy Laboratory Co., Ltd. Photodetektorschaltung, Bildgebungsvorrichtung und Verfahren zum Ansteuern einer Photodetektorschaltung
US9018624B2 (en) 2012-09-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
KR102250010B1 (ko) 2012-09-13 2021-05-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8981372B2 (en) 2012-09-13 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
TWI799011B (zh) 2012-09-14 2023-04-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8927985B2 (en) 2012-09-20 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014046222A1 (en) 2012-09-24 2014-03-27 Semiconductor Energy Laboratory Co., Ltd. Display device
TW202431646A (zh) 2012-09-24 2024-08-01 日商半導體能源研究所股份有限公司 半導體裝置
JP6290576B2 (ja) 2012-10-12 2018-03-07 株式会社半導体エネルギー研究所 液晶表示装置及びその駆動方法
TWI681233B (zh) 2012-10-12 2020-01-01 日商半導體能源研究所股份有限公司 液晶顯示裝置、觸控面板及液晶顯示裝置的製造方法
KR102226090B1 (ko) 2012-10-12 2021-03-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법 및 반도체 장치의 제조 장치
JP6351947B2 (ja) 2012-10-12 2018-07-04 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
WO2014061762A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9166021B2 (en) 2012-10-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014082388A (ja) 2012-10-17 2014-05-08 Semiconductor Energy Lab Co Ltd 半導体装置
JP5951442B2 (ja) 2012-10-17 2016-07-13 株式会社半導体エネルギー研究所 半導体装置
TWI591966B (zh) 2012-10-17 2017-07-11 半導體能源研究所股份有限公司 可編程邏輯裝置及可編程邏輯裝置的驅動方法
JP6021586B2 (ja) 2012-10-17 2016-11-09 株式会社半導体エネルギー研究所 半導体装置
JP6283191B2 (ja) 2012-10-17 2018-02-21 株式会社半導体エネルギー研究所 半導体装置
KR102227591B1 (ko) 2012-10-17 2021-03-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102102589B1 (ko) 2012-10-17 2020-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그램 가능한 논리 장치
JP6059501B2 (ja) 2012-10-17 2017-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102168987B1 (ko) 2012-10-17 2020-10-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 마이크로컨트롤러 및 그 제조 방법
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
JP6204145B2 (ja) 2012-10-23 2017-09-27 株式会社半導体エネルギー研究所 半導体装置
US9287411B2 (en) 2012-10-24 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102279459B1 (ko) 2012-10-24 2021-07-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2014065343A1 (en) 2012-10-24 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI691084B (zh) 2012-10-24 2020-04-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9865743B2 (en) 2012-10-24 2018-01-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide layer surrounding oxide semiconductor layer
WO2014065389A1 (en) 2012-10-25 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Central control system
JP6219562B2 (ja) 2012-10-30 2017-10-25 株式会社半導体エネルギー研究所 表示装置及び電子機器
WO2014073374A1 (en) 2012-11-06 2014-05-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
CN105734493B (zh) 2012-11-08 2018-11-16 株式会社半导体能源研究所 金属氧化物膜及金属氧化物膜的形成方法
TWI608616B (zh) 2012-11-15 2017-12-11 半導體能源研究所股份有限公司 半導體裝置
JP6220641B2 (ja) 2012-11-15 2017-10-25 株式会社半導体エネルギー研究所 半導体装置
TWI605593B (zh) 2012-11-15 2017-11-11 半導體能源研究所股份有限公司 半導體裝置
JP6317059B2 (ja) 2012-11-16 2018-04-25 株式会社半導体エネルギー研究所 半導体装置及び表示装置
JP6285150B2 (ja) 2012-11-16 2018-02-28 株式会社半導体エネルギー研究所 半導体装置
TWI620323B (zh) 2012-11-16 2018-04-01 半導體能源研究所股份有限公司 半導體裝置
TWI600157B (zh) 2012-11-16 2017-09-21 半導體能源研究所股份有限公司 半導體裝置
KR101947166B1 (ko) * 2012-11-19 2019-02-13 삼성디스플레이 주식회사 기판 및 상기 기판을 포함하는 표시장치
US9412764B2 (en) 2012-11-28 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
WO2014084153A1 (en) 2012-11-28 2014-06-05 Semiconductor Energy Laboratory Co., Ltd. Display device
US9263531B2 (en) 2012-11-28 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, film formation method thereof, and semiconductor device
TWI627483B (zh) 2012-11-28 2018-06-21 半導體能源研究所股份有限公司 顯示裝置及電視接收機
TWI882464B (zh) 2012-11-28 2025-05-01 日商半導體能源研究所股份有限公司 顯示裝置
US9594281B2 (en) 2012-11-30 2017-03-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
CN116207143A (zh) 2012-11-30 2023-06-02 株式会社半导体能源研究所 半导体装置
US9153649B2 (en) 2012-11-30 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for evaluating semiconductor device
JP2014130336A (ja) 2012-11-30 2014-07-10 Semiconductor Energy Lab Co Ltd 表示装置
TWI582993B (zh) 2012-11-30 2017-05-11 半導體能源研究所股份有限公司 半導體裝置
US9246011B2 (en) 2012-11-30 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9349593B2 (en) 2012-12-03 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2014135478A (ja) 2012-12-03 2014-07-24 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR102207028B1 (ko) 2012-12-03 2021-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102112364B1 (ko) 2012-12-06 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9577446B2 (en) 2012-12-13 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Power storage system and power storage device storing data for the identifying power storage device
US9711744B2 (en) 2012-12-21 2017-07-18 3M Innovative Properties Company Patterned structured transfer tape
TWI611419B (zh) 2012-12-24 2018-01-11 半導體能源研究所股份有限公司 可程式邏輯裝置及半導體裝置
WO2014103901A1 (en) 2012-12-25 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9905585B2 (en) 2012-12-25 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising capacitor
KR102798241B1 (ko) 2012-12-25 2025-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102241249B1 (ko) 2012-12-25 2021-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 저항 소자, 표시 장치, 및 전자기기
JP2014142986A (ja) 2012-12-26 2014-08-07 Semiconductor Energy Lab Co Ltd 半導体装置
JP2014143410A (ja) 2012-12-28 2014-08-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US9316695B2 (en) 2012-12-28 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102639256B1 (ko) 2012-12-28 2024-02-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제작 방법
JP6329762B2 (ja) 2012-12-28 2018-05-23 株式会社半導体エネルギー研究所 半導体装置
TWI607510B (zh) 2012-12-28 2017-12-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
KR20250133999A (ko) 2012-12-28 2025-09-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9391096B2 (en) 2013-01-18 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI614813B (zh) 2013-01-21 2018-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP6223198B2 (ja) 2013-01-24 2017-11-01 株式会社半導体エネルギー研究所 半導体装置
JP5807076B2 (ja) 2013-01-24 2015-11-10 株式会社半導体エネルギー研究所 半導体装置
US9466725B2 (en) 2013-01-24 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9190172B2 (en) 2013-01-24 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI619010B (zh) 2013-01-24 2018-03-21 半導體能源研究所股份有限公司 半導體裝置
US8981374B2 (en) 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9076825B2 (en) 2013-01-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US9105658B2 (en) 2013-01-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor layer
KR102112367B1 (ko) 2013-02-12 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI618252B (zh) 2013-02-12 2018-03-11 半導體能源研究所股份有限公司 半導體裝置
US9190527B2 (en) 2013-02-13 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
WO2014125979A1 (en) 2013-02-13 2014-08-21 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US8952723B2 (en) 2013-02-13 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9231111B2 (en) 2013-02-13 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9318484B2 (en) 2013-02-20 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI611566B (zh) 2013-02-25 2018-01-11 半導體能源研究所股份有限公司 顯示裝置和電子裝置
US9293544B2 (en) 2013-02-26 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having buried channel structure
TWI611567B (zh) 2013-02-27 2018-01-11 半導體能源研究所股份有限公司 半導體裝置、驅動電路及顯示裝置
TWI612321B (zh) 2013-02-27 2018-01-21 半導體能源研究所股份有限公司 成像裝置
US9373711B2 (en) 2013-02-27 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014195241A (ja) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd 半導体装置
KR102238682B1 (ko) 2013-02-28 2021-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
JP6141777B2 (ja) 2013-02-28 2017-06-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2014195243A (ja) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd 半導体装置
JP6250883B2 (ja) 2013-03-01 2017-12-20 株式会社半導体エネルギー研究所 半導体装置
US9647152B2 (en) 2013-03-01 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Sensor circuit and semiconductor device including sensor circuit
KR102153110B1 (ko) 2013-03-06 2020-09-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체막 및 반도체 장치
US9269315B2 (en) 2013-03-08 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8947121B2 (en) 2013-03-12 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
TWI644433B (zh) 2013-03-13 2018-12-11 半導體能源研究所股份有限公司 半導體裝置
JP6298662B2 (ja) 2013-03-14 2018-03-20 株式会社半導体エネルギー研究所 半導体装置
KR20150128820A (ko) 2013-03-14 2015-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 구동 방법 및 반도체 장치
JP6283237B2 (ja) 2013-03-14 2018-02-21 株式会社半導体エネルギー研究所 半導体装置
JP2014199709A (ja) 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 記憶装置、半導体装置
KR102290247B1 (ko) 2013-03-14 2021-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
JP2014199708A (ja) 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 半導体装置の駆動方法
US9294075B2 (en) 2013-03-14 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9245650B2 (en) 2013-03-15 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9786350B2 (en) 2013-03-18 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9153650B2 (en) 2013-03-19 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor
US9577107B2 (en) 2013-03-19 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and method for forming oxide semiconductor film
US9007092B2 (en) 2013-03-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6093726B2 (ja) 2013-03-22 2017-03-08 株式会社半導体エネルギー研究所 半導体装置
JP6355374B2 (ja) 2013-03-22 2018-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6272713B2 (ja) 2013-03-25 2018-01-31 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス及び半導体装置
WO2014157019A1 (en) 2013-03-25 2014-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10347769B2 (en) 2013-03-25 2019-07-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multi-layer source/drain electrodes
JP6376788B2 (ja) 2013-03-26 2018-08-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP6316630B2 (ja) 2013-03-26 2018-04-25 株式会社半導体エネルギー研究所 半導体装置
JP6395409B2 (ja) 2013-03-27 2018-09-26 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2014209209A (ja) 2013-03-28 2014-11-06 株式会社半導体エネルギー研究所 表示装置
US9368636B2 (en) 2013-04-01 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device comprising a plurality of oxide semiconductor layers
JP6300589B2 (ja) 2013-04-04 2018-03-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9112460B2 (en) 2013-04-05 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Signal processing device
JP6198434B2 (ja) 2013-04-11 2017-09-20 株式会社半導体エネルギー研究所 表示装置及び電子機器
JP6224338B2 (ja) 2013-04-11 2017-11-01 株式会社半導体エネルギー研究所 半導体装置、表示装置及び半導体装置の作製方法
US10304859B2 (en) 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
JP6280794B2 (ja) 2013-04-12 2018-02-14 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法
TWI620324B (zh) 2013-04-12 2018-04-01 半導體能源研究所股份有限公司 半導體裝置
JP6456598B2 (ja) 2013-04-19 2019-01-23 株式会社半導体エネルギー研究所 表示装置
JP6333028B2 (ja) 2013-04-19 2018-05-30 株式会社半導体エネルギー研究所 記憶装置及び半導体装置
US9915848B2 (en) 2013-04-19 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
WO2014175296A1 (en) 2013-04-24 2014-10-30 Semiconductor Energy Laboratory Co., Ltd. Display device
US9893192B2 (en) 2013-04-24 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6396671B2 (ja) 2013-04-26 2018-09-26 株式会社半導体エネルギー研究所 半導体装置
JP6401483B2 (ja) 2013-04-26 2018-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI644434B (zh) 2013-04-29 2018-12-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI631711B (zh) 2013-05-01 2018-08-01 半導體能源研究所股份有限公司 半導體裝置
KR102222344B1 (ko) 2013-05-02 2021-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9882058B2 (en) 2013-05-03 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9231002B2 (en) 2013-05-03 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
CN105190902B (zh) 2013-05-09 2019-01-29 株式会社半导体能源研究所 半导体装置及其制造方法
US9704894B2 (en) 2013-05-10 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Display device including pixel electrode including oxide
US9246476B2 (en) 2013-05-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit
TWI621337B (zh) 2013-05-14 2018-04-11 半導體能源研究所股份有限公司 信號處理裝置
US9312392B2 (en) 2013-05-16 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI742574B (zh) 2013-05-16 2021-10-11 日商半導體能源研究所股份有限公司 半導體裝置
TWI809225B (zh) 2013-05-16 2023-07-21 日商半導體能源研究所股份有限公司 半導體裝置
TWI618058B (zh) 2013-05-16 2018-03-11 半導體能源研究所股份有限公司 半導體裝置
TWI638519B (zh) 2013-05-17 2018-10-11 半導體能源研究所股份有限公司 可程式邏輯裝置及半導體裝置
US9209795B2 (en) 2013-05-17 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Signal processing device and measuring method
US10032872B2 (en) 2013-05-17 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and apparatus for manufacturing semiconductor device
JP6298353B2 (ja) 2013-05-17 2018-03-20 株式会社半導体エネルギー研究所 半導体装置
US9754971B2 (en) 2013-05-18 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
SG10201601511RA (en) 2013-05-20 2016-03-30 Semiconductor Energy Lab Semiconductor device
US9647125B2 (en) 2013-05-20 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9343579B2 (en) 2013-05-20 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE102014208859B4 (de) 2013-05-20 2021-03-11 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
US9293599B2 (en) 2013-05-20 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI664731B (zh) 2013-05-20 2019-07-01 半導體能源研究所股份有限公司 半導體裝置
KR102537022B1 (ko) 2013-05-20 2023-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10416504B2 (en) 2013-05-21 2019-09-17 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR20160009626A (ko) 2013-05-21 2016-01-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 그 형성 방법
TWI624936B (zh) 2013-06-05 2018-05-21 半導體能源研究所股份有限公司 顯示裝置
JP6374221B2 (ja) 2013-06-05 2018-08-15 株式会社半導体エネルギー研究所 半導体装置
TWI687748B (zh) 2013-06-05 2020-03-11 日商半導體能源研究所股份有限公司 顯示裝置及電子裝置
JP6400336B2 (ja) 2013-06-05 2018-10-03 株式会社半導体エネルギー研究所 半導体装置
JP6475424B2 (ja) 2013-06-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
JP2015195327A (ja) 2013-06-05 2015-11-05 株式会社半導体エネルギー研究所 半導体装置
US9773915B2 (en) 2013-06-11 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI641112B (zh) 2013-06-13 2018-11-11 半導體能源研究所股份有限公司 半導體裝置
JP6368155B2 (ja) 2013-06-18 2018-08-01 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
TWI652822B (zh) 2013-06-19 2019-03-01 日商半導體能源研究所股份有限公司 氧化物半導體膜及其形成方法
US9035301B2 (en) 2013-06-19 2015-05-19 Semiconductor Energy Laboratory Co., Ltd. Imaging device
TWI633650B (zh) 2013-06-21 2018-08-21 半導體能源研究所股份有限公司 半導體裝置
JP6357363B2 (ja) 2013-06-26 2018-07-11 株式会社半導体エネルギー研究所 記憶装置
KR20210079411A (ko) 2013-06-27 2021-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6352070B2 (ja) 2013-07-05 2018-07-04 株式会社半導体エネルギー研究所 半導体装置
US20150008428A1 (en) 2013-07-08 2015-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9666697B2 (en) 2013-07-08 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device including an electron trap layer
US9312349B2 (en) 2013-07-08 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
TWI654614B (zh) 2013-07-10 2019-03-21 日商半導體能源研究所股份有限公司 半導體裝置
US9293480B2 (en) 2013-07-10 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP6400961B2 (ja) 2013-07-12 2018-10-03 株式会社半導体エネルギー研究所 表示装置
JP6018607B2 (ja) 2013-07-12 2016-11-02 株式会社半導体エネルギー研究所 半導体装置
JP6322503B2 (ja) 2013-07-16 2018-05-09 株式会社半導体エネルギー研究所 半導体装置
JP6516978B2 (ja) 2013-07-17 2019-05-22 株式会社半導体エネルギー研究所 半導体装置
US9443592B2 (en) 2013-07-18 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9395070B2 (en) 2013-07-19 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Support of flexible component and light-emitting device
US9379138B2 (en) 2013-07-19 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device with drive voltage dependent on external light intensity
TWI608523B (zh) 2013-07-19 2017-12-11 半導體能源研究所股份有限公司 Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device
US10529740B2 (en) 2013-07-25 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including semiconductor layer and conductive layer
TWI636309B (zh) 2013-07-25 2018-09-21 日商半導體能源研究所股份有限公司 液晶顯示裝置及電子裝置
TWI632688B (zh) 2013-07-25 2018-08-11 半導體能源研究所股份有限公司 半導體裝置以及半導體裝置的製造方法
TWI641208B (zh) 2013-07-26 2018-11-11 日商半導體能源研究所股份有限公司 直流對直流轉換器
US9343288B2 (en) 2013-07-31 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6410496B2 (ja) 2013-07-31 2018-10-24 株式会社半導体エネルギー研究所 マルチゲート構造のトランジスタ
JP6460592B2 (ja) 2013-07-31 2019-01-30 株式会社半導体エネルギー研究所 Ｄｃｄｃコンバータ、及び半導体装置
US9496330B2 (en) 2013-08-02 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
TWI635750B (zh) 2013-08-02 2018-09-11 半導體能源研究所股份有限公司 攝像裝置以及其工作方法
JP2015053477A (ja) 2013-08-05 2015-03-19 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
JP6345023B2 (ja) 2013-08-07 2018-06-20 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US9299855B2 (en) 2013-08-09 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having dual gate insulating layers
US9601591B2 (en) 2013-08-09 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6329843B2 (ja) 2013-08-19 2018-05-23 株式会社半導体エネルギー研究所 半導体装置
US9374048B2 (en) 2013-08-20 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing device, and driving method and program thereof
TWI663820B (zh) 2013-08-21 2019-06-21 日商半導體能源研究所股份有限公司 電荷泵電路以及具備電荷泵電路的半導體裝置
KR102232133B1 (ko) 2013-08-22 2021-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9443987B2 (en) 2013-08-23 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102244553B1 (ko) 2013-08-23 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 용량 소자 및 반도체 장치
TWI803081B (zh) 2013-08-28 2023-05-21 日商半導體能源研究所股份有限公司 顯示裝置
US9552767B2 (en) 2013-08-30 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
WO2015030150A1 (en) 2013-08-30 2015-03-05 Semiconductor Energy Laboratory Co., Ltd. Storage circuit and semiconductor device
US9360564B2 (en) 2013-08-30 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Imaging device
JP6426402B2 (ja) 2013-08-30 2018-11-21 株式会社半導体エネルギー研究所 表示装置
US9590109B2 (en) 2013-08-30 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6406926B2 (ja) 2013-09-04 2018-10-17 株式会社半導体エネルギー研究所 半導体装置
US9449853B2 (en) 2013-09-04 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising electron trap layer
US9607991B2 (en) 2013-09-05 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6345544B2 (ja) 2013-09-05 2018-06-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10008513B2 (en) 2013-09-05 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102294507B1 (ko) 2013-09-06 2021-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6401977B2 (ja) 2013-09-06 2018-10-10 株式会社半導体エネルギー研究所 半導体装置
US9590110B2 (en) 2013-09-10 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Ultraviolet light sensor circuit
TWI640014B (zh) 2013-09-11 2018-11-01 半導體能源研究所股份有限公司 記憶體裝置、半導體裝置及電子裝置
US9269822B2 (en) 2013-09-12 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9893194B2 (en) 2013-09-12 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR102197416B1 (ko) 2013-09-13 2020-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
TWI646690B (zh) 2013-09-13 2019-01-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9461126B2 (en) 2013-09-13 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Transistor, clocked inverter circuit, sequential circuit, and semiconductor device including sequential circuit
JP2015079946A (ja) 2013-09-13 2015-04-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9805952B2 (en) 2013-09-13 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6467171B2 (ja) 2013-09-17 2019-02-06 株式会社半導体エネルギー研究所 半導体装置
US9859439B2 (en) 2013-09-18 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9269915B2 (en) 2013-09-18 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI677989B (zh) 2013-09-19 2019-11-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP6570817B2 (ja) 2013-09-23 2019-09-04 株式会社半導体エネルギー研究所 半導体装置
TWI633668B (zh) 2013-09-23 2018-08-21 半導體能源研究所股份有限公司 半導體裝置
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015084418A (ja) 2013-09-23 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
JP6383616B2 (ja) 2013-09-25 2018-08-29 株式会社半導体エネルギー研究所 半導体装置
US9799774B2 (en) 2013-09-26 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Switch circuit, semiconductor device, and system
JP6392603B2 (ja) 2013-09-27 2018-09-19 株式会社半導体エネルギー研究所 半導体装置
JP6581765B2 (ja) 2013-10-02 2019-09-25 株式会社半導体エネルギー研究所 ブートストラップ回路、およびブートストラップ回路を有する半導体装置
JP6386323B2 (ja) 2013-10-04 2018-09-05 株式会社半導体エネルギー研究所 半導体装置
TWI741298B (zh) 2013-10-10 2021-10-01 日商半導體能源研究所股份有限公司 半導體裝置
US9293592B2 (en) 2013-10-11 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR102275031B1 (ko) 2013-10-16 2021-07-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 연산 처리 장치의 구동 방법
TWI642170B (zh) 2013-10-18 2018-11-21 半導體能源研究所股份有限公司 顯示裝置及電子裝置
TWI621127B (zh) 2013-10-18 2018-04-11 半導體能源研究所股份有限公司 運算處理裝置及其驅動方法
DE112014004839T5 (de) 2013-10-22 2016-07-07 Semiconductor Energy Laboratory Co., Ltd. Anzeigevorrichtung
KR102270823B1 (ko) 2013-10-22 2021-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
US9276128B2 (en) 2013-10-22 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and etchant used for the same
WO2015060133A1 (en) 2013-10-22 2015-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015179247A (ja) 2013-10-22 2015-10-08 株式会社半導体エネルギー研究所 表示装置
DE102014220672A1 (de) 2013-10-22 2015-05-07 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
US9455349B2 (en) 2013-10-22 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor with reduced impurity diffusion
JP6625796B2 (ja) 2013-10-25 2019-12-25 株式会社半導体エネルギー研究所 表示装置
JP6457239B2 (ja) 2013-10-31 2019-01-23 株式会社半導体エネルギー研究所 半導体装置
US9590111B2 (en) 2013-11-06 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP6440457B2 (ja) 2013-11-07 2018-12-19 株式会社半導体エネルギー研究所 半導体装置
JP6478562B2 (ja) 2013-11-07 2019-03-06 株式会社半導体エネルギー研究所 半導体装置
US9385054B2 (en) 2013-11-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing device and manufacturing method thereof
JP2015118724A (ja) 2013-11-13 2015-06-25 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の駆動方法
JP6426437B2 (ja) 2013-11-22 2018-11-21 株式会社半導体エネルギー研究所 半導体装置
JP6393590B2 (ja) 2013-11-22 2018-09-19 株式会社半導体エネルギー研究所 半導体装置
JP6486660B2 (ja) 2013-11-27 2019-03-20 株式会社半導体エネルギー研究所 表示装置
US20150155313A1 (en) 2013-11-29 2015-06-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9882014B2 (en) 2013-11-29 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2016001712A (ja) 2013-11-29 2016-01-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN106597697A (zh) 2013-12-02 2017-04-26 株式会社半导体能源研究所 显示装置及其制造方法
CN105874524B (zh) 2013-12-02 2019-05-28 株式会社半导体能源研究所 显示装置
US9601634B2 (en) 2013-12-02 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9991392B2 (en) 2013-12-03 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2016027597A (ja) 2013-12-06 2016-02-18 株式会社半導体エネルギー研究所 半導体装置
US9349751B2 (en) 2013-12-12 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9627413B2 (en) 2013-12-12 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
TWI642186B (zh) 2013-12-18 2018-11-21 日商半導體能源研究所股份有限公司 半導體裝置
CN103700667B (zh) * 2013-12-18 2017-02-01 北京京东方光电科技有限公司 一种像素阵列结构及其制作方法、阵列基板和显示装置
TWI666770B (zh) 2013-12-19 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置
JP6444714B2 (ja) 2013-12-20 2018-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9379192B2 (en) 2013-12-20 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102283814B1 (ko) 2013-12-25 2021-07-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2015097596A1 (en) 2013-12-26 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6402017B2 (ja) 2013-12-26 2018-10-10 株式会社半導体エネルギー研究所 半導体装置
KR102472875B1 (ko) 2013-12-26 2022-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9960280B2 (en) 2013-12-26 2018-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI637484B (zh) 2013-12-26 2018-10-01 日商半導體能源研究所股份有限公司 半導體裝置
US9472678B2 (en) 2013-12-27 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9349418B2 (en) 2013-12-27 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
JP6506545B2 (ja) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 半導体装置
US9318618B2 (en) 2013-12-27 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6506961B2 (ja) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 液晶表示装置
KR102841877B1 (ko) 2013-12-27 2025-08-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
US9577110B2 (en) 2013-12-27 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor and the display device including the semiconductor device
US9397149B2 (en) 2013-12-27 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102529174B1 (ko) 2013-12-27 2023-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6444723B2 (ja) 2014-01-09 2018-12-26 株式会社半導体エネルギー研究所 装置
US9300292B2 (en) 2014-01-10 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Circuit including transistor
US9401432B2 (en) 2014-01-16 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9379713B2 (en) 2014-01-17 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Data processing device and driving method thereof
KR102306200B1 (ko) 2014-01-24 2021-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2015114476A1 (en) 2014-01-28 2015-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9929044B2 (en) 2014-01-30 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI665778B (zh) 2014-02-05 2019-07-11 日商半導體能源研究所股份有限公司 半導體裝置、模組及電子裝置
US9929279B2 (en) 2014-02-05 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9443876B2 (en) 2014-02-05 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
JP6523695B2 (ja) 2014-02-05 2019-06-05 株式会社半導体エネルギー研究所 半導体装置
US9721968B2 (en) 2014-02-06 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic appliance
US9869716B2 (en) 2014-02-07 2018-01-16 Semiconductor Energy Laboratory Co., Ltd. Device comprising programmable logic element
WO2015118436A1 (en) 2014-02-07 2015-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, device, and electronic device
JP2015165226A (ja) 2014-02-07 2015-09-17 株式会社半導体エネルギー研究所 装置
JP6420165B2 (ja) 2014-02-07 2018-11-07 株式会社半導体エネルギー研究所 半導体装置
TWI658597B (zh) 2014-02-07 2019-05-01 日商半導體能源研究所股份有限公司 半導體裝置
US9479175B2 (en) 2014-02-07 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
DE112015000739T5 (de) 2014-02-11 2016-12-29 Semiconductor Energy Laboratory Co., Ltd. Anzeigevorrichtung und elektronisches Gerät
KR102317297B1 (ko) 2014-02-19 2021-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물, 반도체 장치, 모듈, 및 전자 장치
US9817040B2 (en) 2014-02-21 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Measuring method of low off-state current of transistor
JP2015172991A (ja) 2014-02-21 2015-10-01 株式会社半導体エネルギー研究所 半導体装置、電子部品、及び電子機器
TWI702187B (zh) 2014-02-21 2020-08-21 日商半導體能源研究所股份有限公司 半導體膜、電晶體、半導體裝置、顯示裝置以及電子裝置
US9564535B2 (en) 2014-02-28 2017-02-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module
CN106104772B (zh) 2014-02-28 2020-11-10 株式会社半导体能源研究所 半导体装置以及具有该半导体装置的显示装置
KR102329066B1 (ko) 2014-02-28 2021-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법, 및 전자 기기
US10074576B2 (en) 2014-02-28 2018-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US9294096B2 (en) 2014-02-28 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6474280B2 (ja) 2014-03-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
KR20150104518A (ko) 2014-03-05 2015-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레벨 시프터 회로
US10096489B2 (en) 2014-03-06 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6625328B2 (ja) 2014-03-06 2019-12-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
US9537478B2 (en) 2014-03-06 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9397637B2 (en) 2014-03-06 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Voltage controlled oscillator, semiconductor device, and electronic device
US9653611B2 (en) 2014-03-07 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9419622B2 (en) 2014-03-07 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015132697A1 (en) 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102267237B1 (ko) 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
WO2015132694A1 (en) 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Touch sensor, touch panel, and manufacturing method of touch panel
JP6585354B2 (ja) 2014-03-07 2019-10-02 株式会社半導体エネルギー研究所 半導体装置
JP6442321B2 (ja) 2014-03-07 2018-12-19 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法、並びに電子機器
US9711536B2 (en) 2014-03-07 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
JP6545976B2 (ja) 2014-03-07 2019-07-17 株式会社半導体エネルギー研究所 半導体装置
KR20160132405A (ko) 2014-03-12 2016-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2015136418A1 (en) 2014-03-13 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US9640669B2 (en) 2014-03-13 2017-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module
JP6541376B2 (ja) 2014-03-13 2019-07-10 株式会社半導体エネルギー研究所 プログラマブルロジックデバイスの動作方法
JP6677449B2 (ja) 2014-03-13 2020-04-08 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP6525421B2 (ja) 2014-03-13 2019-06-05 株式会社半導体エネルギー研究所 半導体装置
JP6560508B2 (ja) 2014-03-13 2019-08-14 株式会社半導体エネルギー研究所 半導体装置
US9324747B2 (en) 2014-03-13 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US10361290B2 (en) 2014-03-14 2019-07-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising adding oxygen to buffer film and insulating film
KR102367921B1 (ko) 2014-03-14 2022-02-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 회로 시스템
JP2015188071A (ja) 2014-03-14 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
US9299848B2 (en) 2014-03-14 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, RF tag, and electronic device
US9887212B2 (en) 2014-03-14 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2015140656A1 (en) 2014-03-18 2015-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6509596B2 (ja) 2014-03-18 2019-05-08 株式会社半導体エネルギー研究所 半導体装置
US9887291B2 (en) 2014-03-19 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, or the display module
US9842842B2 (en) 2014-03-19 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device and electronic device having the same
TWI657488B (zh) 2014-03-20 2019-04-21 日商半導體能源研究所股份有限公司 半導體裝置、具有該半導體裝置的顯示裝置、具有該顯示裝置的顯示模組以及具有該半導體裝置、該顯示裝置和該顯示模組的電子裝置
KR102398965B1 (ko) 2014-03-20 2022-05-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
KR102332469B1 (ko) 2014-03-28 2021-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터 및 반도체 장치
JP6487738B2 (ja) 2014-03-31 2019-03-20 株式会社半導体エネルギー研究所 半導体装置、電子部品
TWI767772B (zh) 2014-04-10 2022-06-11 日商半導體能源研究所股份有限公司 記憶體裝置及半導體裝置
JP6541398B2 (ja) 2014-04-11 2019-07-10 株式会社半導体エネルギー研究所 半導体装置
TWI646782B (zh) 2014-04-11 2019-01-01 日商半導體能源研究所股份有限公司 保持電路、保持電路的驅動方法以及包括保持電路的半導體裝置
US9674470B2 (en) 2014-04-11 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and method for driving electronic device
JP6635670B2 (ja) 2014-04-11 2020-01-29 株式会社半導体エネルギー研究所 半導体装置
KR102318728B1 (ko) 2014-04-18 2021-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 이를 가지는 표시 장치
WO2015159179A1 (en) 2014-04-18 2015-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR102511325B1 (ko) 2014-04-18 2023-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 동작 방법
JP6613044B2 (ja) 2014-04-22 2019-11-27 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
KR102380829B1 (ko) 2014-04-23 2022-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
TWI643457B (zh) 2014-04-25 2018-12-01 日商半導體能源研究所股份有限公司 半導體裝置
JP6468686B2 (ja) 2014-04-25 2019-02-13 株式会社半導体エネルギー研究所 入出力装置
US9780226B2 (en) 2014-04-25 2017-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102330412B1 (ko) 2014-04-25 2021-11-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
US10043913B2 (en) 2014-04-30 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor device, display device, module, and electronic device
TWI679624B (zh) 2014-05-02 2019-12-11 日商半導體能源研究所股份有限公司 半導體裝置
US10656799B2 (en) 2014-05-02 2020-05-19 Semiconductor Energy Laboratory Co., Ltd. Display device and operation method thereof
JP6537341B2 (ja) 2014-05-07 2019-07-03 株式会社半導体エネルギー研究所 半導体装置
JP6653997B2 (ja) 2014-05-09 2020-02-26 株式会社半導体エネルギー研究所 表示補正回路及び表示装置
KR102333604B1 (ko) 2014-05-15 2021-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이 반도체 장치를 포함하는 표시 장치
JP6612056B2 (ja) 2014-05-16 2019-11-27 株式会社半導体エネルギー研究所 撮像装置、及び監視装置
JP2015233130A (ja) 2014-05-16 2015-12-24 株式会社半導体エネルギー研究所 半導体基板および半導体装置の作製方法
JP6580863B2 (ja) 2014-05-22 2019-09-25 株式会社半導体エネルギー研究所 半導体装置、健康管理システム
TWI672804B (zh) 2014-05-23 2019-09-21 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
JP6616102B2 (ja) 2014-05-23 2019-12-04 株式会社半導体エネルギー研究所 記憶装置及び電子機器
WO2015181679A1 (en) * 2014-05-27 2015-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10020403B2 (en) 2014-05-27 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9874775B2 (en) 2014-05-28 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
JP6615490B2 (ja) 2014-05-29 2019-12-04 株式会社半導体エネルギー研究所 半導体装置及び電子機器
KR102418666B1 (ko) 2014-05-29 2022-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 소자, 전자 기기, 촬상 소자의 구동 방법, 및 전자 기기의 구동 방법
JP6653129B2 (ja) 2014-05-29 2020-02-26 株式会社半導体エネルギー研究所 記憶装置
KR20150138026A (ko) 2014-05-29 2015-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6525722B2 (ja) 2014-05-29 2019-06-05 株式会社半導体エネルギー研究所 記憶装置、電子部品、及び電子機器
JP6538426B2 (ja) 2014-05-30 2019-07-03 株式会社半導体エネルギー研究所 半導体装置及び電子機器
WO2015182000A1 (en) 2014-05-30 2015-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
SG10201912585TA (en) 2014-05-30 2020-02-27 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
TWI663726B (zh) 2014-05-30 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置、模組及電子裝置
TWI646658B (zh) 2014-05-30 2019-01-01 日商半導體能源研究所股份有限公司 半導體裝置
JP6537892B2 (ja) 2014-05-30 2019-07-03 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US9831238B2 (en) 2014-05-30 2017-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including insulating film having opening portion and conductive film in the opening portion
JP2016015475A (ja) 2014-06-13 2016-01-28 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
KR102344782B1 (ko) 2014-06-13 2021-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 입력 장치 및 입출력 장치
KR102437450B1 (ko) 2014-06-13 2022-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치를 포함하는 전자 기기
TWI663733B (zh) 2014-06-18 2019-06-21 日商半導體能源研究所股份有限公司 電晶體及半導體裝置
TWI666776B (zh) 2014-06-20 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置以及包括該半導體裝置的顯示裝置
KR20150146409A (ko) 2014-06-20 2015-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치, 입출력 장치, 및 전자 기기
US9722090B2 (en) 2014-06-23 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including first gate oxide semiconductor film, and second gate
JP6545541B2 (ja) 2014-06-25 2019-07-17 株式会社半導体エネルギー研究所 撮像装置、監視装置、及び電子機器
US10002971B2 (en) 2014-07-03 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
US9647129B2 (en) 2014-07-04 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9461179B2 (en) 2014-07-11 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor device (TFT) comprising stacked oxide semiconductor layers and having a surrounded channel structure
KR20220069118A (ko) 2014-07-15 2022-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치
JP2016029795A (ja) 2014-07-18 2016-03-03 株式会社半導体エネルギー研究所 半導体装置、撮像装置及び電子機器
JP6581825B2 (ja) 2014-07-18 2019-09-25 株式会社半導体エネルギー研究所 表示システム
US9312280B2 (en) 2014-07-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2016012893A1 (en) 2014-07-25 2016-01-28 Semiconductor Energy Laboratory Co., Ltd. Oscillator circuit and semiconductor device including the same
JP6527416B2 (ja) 2014-07-29 2019-06-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6555956B2 (ja) 2014-07-31 2019-08-07 株式会社半導体エネルギー研究所 撮像装置、監視装置、及び電子機器
KR102533396B1 (ko) 2014-07-31 2023-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 장치
US9705004B2 (en) 2014-08-01 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6553444B2 (ja) 2014-08-08 2019-07-31 株式会社半導体エネルギー研究所 半導体装置
JP6739150B2 (ja) 2014-08-08 2020-08-12 株式会社半導体エネルギー研究所 半導体装置、発振回路、位相同期回路及び電子機器
JP6652342B2 (ja) 2014-08-08 2020-02-19 株式会社半導体エネルギー研究所 半導体装置
US10147747B2 (en) 2014-08-21 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
US10032888B2 (en) 2014-08-22 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and electronic appliance having semiconductor device
US10559667B2 (en) 2014-08-25 2020-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for measuring current of semiconductor device
WO2016030801A1 (en) 2014-08-29 2016-03-03 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
KR102393272B1 (ko) 2014-09-02 2022-05-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 전자 기기
KR102329498B1 (ko) 2014-09-04 2021-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9766517B2 (en) 2014-09-05 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Display device and display module
TW201614626A (en) 2014-09-05 2016-04-16 Semiconductor Energy Lab Display device and electronic device
JP6676316B2 (ja) 2014-09-12 2020-04-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9722091B2 (en) 2014-09-12 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9401364B2 (en) 2014-09-19 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
WO2016042433A1 (en) 2014-09-19 2016-03-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20160034200A (ko) 2014-09-19 2016-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP2016066788A (ja) 2014-09-19 2016-04-28 株式会社半導体エネルギー研究所 半導体膜の評価方法および半導体装置の作製方法
US10071904B2 (en) 2014-09-25 2018-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
US10141342B2 (en) 2014-09-26 2018-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
WO2016046685A1 (en) 2014-09-26 2016-03-31 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US10170055B2 (en) 2014-09-26 2019-01-01 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
JP2016111677A (ja) 2014-09-26 2016-06-20 株式会社半導体エネルギー研究所 半導体装置、無線センサ、及び電子機器
US9450581B2 (en) 2014-09-30 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, semiconductor device, electronic component, and electronic device
KR20170068511A (ko) 2014-10-06 2017-06-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US9698170B2 (en) 2014-10-07 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
WO2016055903A1 (en) 2014-10-10 2016-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
KR102341741B1 (ko) 2014-10-10 2021-12-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로, 처리 유닛, 전자 부품, 및 전자 기기
US9991393B2 (en) 2014-10-16 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, module, and electronic device
JP6645793B2 (ja) 2014-10-17 2020-02-14 株式会社半導体エネルギー研究所 半導体装置
WO2016063159A1 (en) 2014-10-20 2016-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof, module, and electronic device
US10068927B2 (en) 2014-10-23 2018-09-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
JP6615565B2 (ja) 2014-10-24 2019-12-04 株式会社半導体エネルギー研究所 半導体装置
US9704704B2 (en) 2014-10-28 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
CN107111970B (zh) 2014-10-28 2021-08-13 株式会社半导体能源研究所 显示装置、显示装置的制造方法及电子设备
TWI652362B (zh) 2014-10-28 2019-03-01 日商半導體能源研究所股份有限公司 氧化物及其製造方法
US9793905B2 (en) 2014-10-31 2017-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10680017B2 (en) 2014-11-07 2020-06-09 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element including EL layer, electrode which has high reflectance and a high work function, display device, electronic device, and lighting device
US9548327B2 (en) 2014-11-10 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Imaging device having a selenium containing photoelectric conversion layer
US9584707B2 (en) 2014-11-10 2017-02-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
TWI711165B (zh) 2014-11-21 2020-11-21 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
TWI699897B (zh) 2014-11-21 2020-07-21 日商半導體能源研究所股份有限公司 半導體裝置
US9438234B2 (en) 2014-11-21 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device including logic circuit
JP6563313B2 (ja) 2014-11-21 2019-08-21 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
WO2016083952A1 (en) 2014-11-28 2016-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, module, and electronic device
JP6647841B2 (ja) 2014-12-01 2020-02-14 株式会社半導体エネルギー研究所 酸化物の作製方法
US20160155849A1 (en) 2014-12-02 2016-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, module, and electronic device
JP6667267B2 (ja) 2014-12-08 2020-03-18 株式会社半導体エネルギー研究所 半導体装置
JP6647846B2 (ja) 2014-12-08 2020-02-14 株式会社半導体エネルギー研究所 半導体装置
US9773832B2 (en) 2014-12-10 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP6689062B2 (ja) 2014-12-10 2020-04-28 株式会社半導体エネルギー研究所 半導体装置
WO2016092427A1 (en) 2014-12-10 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6833315B2 (ja) 2014-12-10 2021-02-24 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
WO2016092416A1 (en) 2014-12-11 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and electronic device
JP6676354B2 (ja) 2014-12-16 2020-04-08 株式会社半導体エネルギー研究所 半導体装置
JP2016116220A (ja) 2014-12-16 2016-06-23 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
TWI687657B (zh) 2014-12-18 2020-03-11 日商半導體能源研究所股份有限公司 半導體裝置、感測裝置和電子裝置
TWI686874B (zh) 2014-12-26 2020-03-01 日商半導體能源研究所股份有限公司 半導體裝置、顯示裝置、顯示模組、電子裝置、氧化物及氧化物的製造方法
KR20170101233A (ko) 2014-12-26 2017-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링용 타깃의 제작 방법
US10396210B2 (en) 2014-12-26 2019-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with stacked metal oxide and oxide semiconductor layers and display device including the semiconductor device
WO2016108122A1 (en) 2014-12-29 2016-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device having semiconductor device
US10522693B2 (en) 2015-01-16 2019-12-31 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
US9954112B2 (en) 2015-01-26 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9443564B2 (en) 2015-01-26 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US9812587B2 (en) 2015-01-26 2017-11-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI710124B (zh) 2015-01-30 2020-11-11 日商半導體能源研究所股份有限公司 成像裝置及電子裝置
US9647132B2 (en) 2015-01-30 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
KR20170109231A (ko) 2015-02-02 2017-09-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 및 그 제작 방법
CN112436021B (zh) 2015-02-04 2025-06-06 株式会社半导体能源研究所 半导体装置的制造方法
US9660100B2 (en) 2015-02-06 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI732383B (zh) 2015-02-06 2021-07-01 日商半導體能源研究所股份有限公司 裝置及其製造方法以及電子裝置
JP6717604B2 (ja) 2015-02-09 2020-07-01 株式会社半導体エネルギー研究所 半導体装置、中央処理装置及び電子機器
US9954113B2 (en) 2015-02-09 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Transistor including oxide semiconductor, semiconductor device including the transistor, and electronic device including the transistor
TWI685113B (zh) 2015-02-11 2020-02-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP2016154225A (ja) 2015-02-12 2016-08-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
CN114512547A (zh) 2015-02-12 2022-05-17 株式会社半导体能源研究所 氧化物半导体膜及半导体装置
US9818880B2 (en) 2015-02-12 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
US10249644B2 (en) 2015-02-13 2019-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US9489988B2 (en) 2015-02-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9991394B2 (en) 2015-02-20 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US10403646B2 (en) 2015-02-20 2019-09-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9722092B2 (en) 2015-02-25 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a stacked metal oxide
JP6739185B2 (ja) 2015-02-26 2020-08-12 株式会社半導体エネルギー研究所 ストレージシステム、およびストレージ制御回路
US9653613B2 (en) 2015-02-27 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6744108B2 (ja) 2015-03-02 2020-08-19 株式会社半導体エネルギー研究所 トランジスタ、トランジスタの作製方法、半導体装置および電子機器
TWI718125B (zh) 2015-03-03 2021-02-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
WO2016139560A1 (en) 2015-03-03 2016-09-09 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, semiconductor device including the oxide semiconductor film, and display device including the semiconductor device
DE112016001033T5 (de) 2015-03-03 2017-12-21 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung, Verfahren zum Herstellen derselben oder Anzeigevorrichtung mit derselben
JP6681117B2 (ja) 2015-03-13 2020-04-15 株式会社半導体エネルギー研究所 半導体装置
US10008609B2 (en) 2015-03-17 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, or display device including the same
US9964799B2 (en) 2015-03-17 2018-05-08 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, and electronic device
KR102560862B1 (ko) 2015-03-17 2023-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 터치 패널
US9882061B2 (en) 2015-03-17 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10134332B2 (en) 2015-03-18 2018-11-20 Semiconductor Energy Laboratory Co., Ltd. Display device, electronic device, and driving method of display device
US10147823B2 (en) 2015-03-19 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102582523B1 (ko) 2015-03-19 2023-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
JP6662665B2 (ja) 2015-03-19 2020-03-11 株式会社半導体エネルギー研究所 液晶表示装置及び該液晶表示装置を用いた電子機器
KR20160114511A (ko) 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9634048B2 (en) 2015-03-24 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US9842938B2 (en) 2015-03-24 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including semiconductor device
US10096715B2 (en) 2015-03-26 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and electronic device
US10429704B2 (en) 2015-03-26 2019-10-01 Semiconductor Energy Laboratory Co., Ltd. Display device, display module including the display device, and electronic device including the display device or the display module
US9806200B2 (en) 2015-03-27 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6736321B2 (ja) 2015-03-27 2020-08-05 株式会社半導体エネルギー研究所 半導体装置の製造方法
TWI695513B (zh) 2015-03-27 2020-06-01 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
TW202316486A (zh) 2015-03-30 2023-04-16 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
US9716852B2 (en) 2015-04-03 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Broadcast system
US10389961B2 (en) 2015-04-09 2019-08-20 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US10372274B2 (en) 2015-04-13 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and touch panel
KR102546189B1 (ko) 2015-04-13 2023-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10460984B2 (en) 2015-04-15 2019-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating electrode and semiconductor device
US10056497B2 (en) 2015-04-15 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2016206659A (ja) 2015-04-16 2016-12-08 株式会社半導体エネルギー研究所 表示装置および電子機器、並びに表示装置の駆動方法
US10192995B2 (en) 2015-04-28 2019-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10002970B2 (en) 2015-04-30 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method of the same, or display device including the same
KR102549926B1 (ko) 2015-05-04 2023-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 반도체 장치의 제작 방법, 및 전자기기
US10671204B2 (en) 2015-05-04 2020-06-02 Semiconductor Energy Laboratory Co., Ltd. Touch panel and data processor
JP6681780B2 (ja) 2015-05-07 2020-04-15 株式会社半導体エネルギー研究所 表示システムおよび電子機器
TWI693719B (zh) 2015-05-11 2020-05-11 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
DE102016207737A1 (de) 2015-05-11 2016-11-17 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung, Verfahren zum Herstellen der Halbleitervorrichtung, Reifen und beweglicher Gegenstand
US11728356B2 (en) 2015-05-14 2023-08-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion element and imaging device
JP6935171B2 (ja) 2015-05-14 2021-09-15 株式会社半導体エネルギー研究所 半導体装置
US9627034B2 (en) 2015-05-15 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Electronic device
KR102865103B1 (ko) 2015-05-22 2025-09-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치
US9837547B2 (en) 2015-05-22 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide conductor and display device including the semiconductor device
JP6773453B2 (ja) 2015-05-26 2020-10-21 株式会社半導体エネルギー研究所 記憶装置及び電子機器
JP2016225614A (ja) 2015-05-26 2016-12-28 株式会社半導体エネルギー研究所 半導体装置
US10139663B2 (en) 2015-05-29 2018-11-27 Semiconductor Energy Laboratory Co., Ltd. Input/output device and electronic device
KR102553553B1 (ko) 2015-06-12 2023-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치, 및 그 동작 방법 및 전자 기기
DE112016002769T5 (de) 2015-06-19 2018-03-29 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung, Herstellungsverfahren dafür und elektronisches Gerät
US9860465B2 (en) 2015-06-23 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US9935633B2 (en) 2015-06-30 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, semiconductor device, electronic component, and electronic device
US10290573B2 (en) 2015-07-02 2019-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9917209B2 (en) 2015-07-03 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including step of forming trench over semiconductor
KR102548001B1 (ko) 2015-07-08 2023-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2017022377A (ja) 2015-07-14 2017-01-26 株式会社半導体エネルギー研究所 半導体装置
US10501003B2 (en) 2015-07-17 2019-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, lighting device, and vehicle
US10985278B2 (en) 2015-07-21 2021-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10978489B2 (en) 2015-07-24 2021-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display panel, method for manufacturing semiconductor device, method for manufacturing display panel, and information processing device
US11024725B2 (en) 2015-07-24 2021-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including metal oxide film
US11189736B2 (en) 2015-07-24 2021-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10424671B2 (en) 2015-07-29 2019-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
US10585506B2 (en) 2015-07-30 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Display device with high visibility regardless of illuminance of external light
CN106409919A (zh) 2015-07-30 2017-02-15 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
US9825177B2 (en) 2015-07-30 2017-11-21 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a semiconductor device using multiple etching mask
KR102513517B1 (ko) 2015-07-30 2023-03-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US9876946B2 (en) 2015-08-03 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
JP6725357B2 (ja) 2015-08-03 2020-07-15 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法
JP6791661B2 (ja) 2015-08-07 2020-11-25 株式会社半導体エネルギー研究所 表示パネル
WO2017029576A1 (en) 2015-08-19 2017-02-23 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9666606B2 (en) 2015-08-21 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP2017041877A (ja) 2015-08-21 2017-02-23 株式会社半導体エネルギー研究所 半導体装置、電子部品、および電子機器
US9773919B2 (en) 2015-08-26 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2017037564A1 (en) 2015-08-28 2017-03-09 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor, transistor, and semiconductor device
US9911756B2 (en) 2015-08-31 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor and electronic device surrounded by layer having assigned band gap to prevent electrostatic discharge damage
JP2017050537A (ja) 2015-08-31 2017-03-09 株式会社半導体エネルギー研究所 半導体装置
JP6807683B2 (ja) 2015-09-11 2021-01-06 株式会社半導体エネルギー研究所 入出力パネル
SG10201607278TA (en) 2015-09-18 2017-04-27 Semiconductor Energy Lab Co Ltd Semiconductor device and electronic device
JP2017063420A (ja) 2015-09-25 2017-03-30 株式会社半導体エネルギー研究所 半導体装置
KR20180063084A (ko) 2015-09-30 2018-06-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
WO2017064590A1 (en) 2015-10-12 2017-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2017064587A1 (en) 2015-10-12 2017-04-20 Semiconductor Energy Laboratory Co., Ltd. Display panel, input/output device, data processor, and method for manufacturing display panel
US9852926B2 (en) 2015-10-20 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device
KR102084378B1 (ko) 2015-10-23 2020-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US20170118479A1 (en) 2015-10-23 2017-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10007161B2 (en) 2015-10-26 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Display device
SG10201608814YA (en) 2015-10-29 2017-05-30 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the semiconductor device
US9773787B2 (en) 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
US9741400B2 (en) 2015-11-05 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, and method for operating the semiconductor device
JP6796461B2 (ja) 2015-11-18 2020-12-09 株式会社半導体エネルギー研究所 半導体装置、コンピュータ及び電子機器
JP2018032839A (ja) 2015-12-11 2018-03-01 株式会社半導体エネルギー研究所 トランジスタ、回路、半導体装置、表示装置および電子機器
US10868045B2 (en) 2015-12-11 2020-12-15 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
US10050152B2 (en) 2015-12-16 2018-08-14 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
CN108475491B (zh) 2015-12-18 2021-04-20 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
US10177142B2 (en) 2015-12-25 2019-01-08 Semiconductor Energy Laboratory Co., Ltd. Circuit, logic circuit, processor, electronic component, and electronic device
CN113327948A (zh) 2015-12-28 2021-08-31 株式会社半导体能源研究所 半导体装置、包括该半导体装置的显示装置
JP2017135698A (ja) 2015-12-29 2017-08-03 株式会社半導体エネルギー研究所 半導体装置、コンピュータ及び電子機器
JP6851814B2 (ja) 2015-12-29 2021-03-31 株式会社半導体エネルギー研究所 トランジスタ
CN113105213A (zh) 2015-12-29 2021-07-13 株式会社半导体能源研究所 金属氧化物膜以及半导体装置
US10580798B2 (en) 2016-01-15 2020-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPWO2017125796A1 (ja) 2016-01-18 2018-11-15 株式会社半導体エネルギー研究所 金属酸化物膜、半導体装置、及び表示装置
JP6839986B2 (ja) 2016-01-20 2021-03-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6822853B2 (ja) 2016-01-21 2021-01-27 株式会社半導体エネルギー研究所 記憶装置及び記憶装置の駆動方法
US10411013B2 (en) 2016-01-22 2019-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
US10700212B2 (en) 2016-01-28 2020-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof
US10115741B2 (en) 2016-02-05 2018-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10250247B2 (en) 2016-02-10 2019-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
JP6970511B2 (ja) 2016-02-12 2021-11-24 株式会社半導体エネルギー研究所 トランジスタ
KR102655935B1 (ko) 2016-02-12 2024-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 상기 반도체 장치를 포함하는 표시 장치
US9954003B2 (en) 2016-02-17 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10263114B2 (en) 2016-03-04 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, or display device including the same
WO2017149428A1 (en) 2016-03-04 2017-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device including the semiconductor device
WO2017149413A1 (en) 2016-03-04 2017-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6904730B2 (ja) 2016-03-08 2021-07-21 株式会社半導体エネルギー研究所 撮像装置
US9882064B2 (en) 2016-03-10 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Transistor and electronic device
US10096720B2 (en) 2016-03-25 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
JP6668455B2 (ja) 2016-04-01 2020-03-18 株式会社半導体エネルギー研究所 酸化物半導体膜の作製方法
CN109074296B (zh) 2016-04-15 2023-09-12 株式会社半导体能源研究所 半导体装置、电子构件及电子设备
US10236875B2 (en) 2016-04-15 2019-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for operating the semiconductor device
WO2017199130A1 (en) 2016-05-19 2017-11-23 Semiconductor Energy Laboratory Co., Ltd. Composite oxide semiconductor and transistor
CN114664949A (zh) 2016-06-03 2022-06-24 株式会社半导体能源研究所 场效应晶体管
KR102330605B1 (ko) 2016-06-22 2021-11-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10411003B2 (en) 2016-10-14 2019-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN114115609B (zh) 2016-11-25 2024-09-03 株式会社半导体能源研究所 显示装置及其工作方法
JP7258754B2 (ja) 2017-07-31 2023-04-17 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP6782211B2 (ja) * 2017-09-08 2020-11-11 株式会社東芝 透明電極、それを用いた素子、および素子の製造方法
WO2019145803A1 (ja) 2018-01-24 2019-08-01 株式会社半導体エネルギー研究所 半導体装置、電子部品、及び電子機器
JP7293190B2 (ja) 2018-03-16 2023-06-19 株式会社半導体エネルギー研究所 半導体装置
US11610998B2 (en) 2018-07-09 2023-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11990778B2 (en) 2018-07-10 2024-05-21 Semiconductor Energy Laboratory Co., Ltd. Secondary battery protection circuit and secondary battery anomaly detection system
JP7475282B2 (ja) 2018-11-02 2024-04-26 株式会社半導体エネルギー研究所 半導体装置
US20220073424A1 (en) * 2018-11-14 2022-03-10 Saint-Gobain Glass France Method for the selective etching of a layer or a stack of layers on a glass substrate
CN113169382B (zh) 2018-11-22 2024-09-24 株式会社半导体能源研究所 半导体装置及电池组
KR102696416B1 (ko) * 2018-12-05 2024-08-16 엘지디스플레이 주식회사 전계발광 표시장치
CN109509707B (zh) * 2018-12-11 2023-04-28 合肥鑫晟光电科技有限公司 显示面板、阵列基板、薄膜晶体管及其制造方法
JP7526671B2 (ja) 2018-12-20 2024-08-01 株式会社半導体エネルギー研究所 半導体装置および電池パック
CN109728067B (zh) * 2019-01-22 2021-01-15 京东方科技集团股份有限公司 一种显示面板及其制造方法、显示装置
US12040007B2 (en) 2019-04-26 2024-07-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
CN113711295A (zh) 2019-05-10 2021-11-26 株式会社半导体能源研究所 显示装置以及电子设备
WO2020240331A1 (ja) 2019-05-31 2020-12-03 株式会社半導体エネルギー研究所 半導体装置、および当該半導体装置を備えた無線通信装置
CN112530978B (zh) * 2020-12-01 2024-02-13 京东方科技集团股份有限公司 开关器件结构及其制备方法、薄膜晶体管膜层、显示面板
EP4012794A1 (en) * 2020-12-11 2022-06-15 Julius-Maximilians-Universität Würzburg Emission of electromagnetic radiation and control of properties of the emitted electromagnetic radiation
US11862668B2 (en) * 2021-07-02 2024-01-02 Micron Technology, Inc. Single-crystal transistors for memory devices

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002289859A (ja) * 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP2002359075A (ja) * 2001-03-29 2002-12-13 Sharp Corp 有機エレクトロルミネッセンス表示パネルおよびその製造方法
JP2003077658A (ja) * 2001-09-05 2003-03-14 Sharp Corp 有機ｅｌ素子製造用ドナーフィルムおよび有機ｅｌ素子用基板
JP2003086808A (ja) * 2001-09-10 2003-03-20 Masashi Kawasaki 薄膜トランジスタおよびマトリクス表示装置
WO2003098699A1 (fr) * 2002-05-22 2003-11-27 Sharp Kabushiki Kaisha Dispositif semiconducteur et afficheur comprenant ce dispositif
JP2004071554A (ja) * 2002-07-25 2004-03-04 Sanyo Electric Co Ltd 有機ｅｌパネルおよびその製造方法
JP2004253389A (ja) * 2003-02-18 2004-09-09 Eastman Kodak Co 多色有機発光表示装置
JP2004281182A (ja) * 2003-03-14 2004-10-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
WO2004087434A1 (en) * 2003-03-27 2004-10-14 E.I. Dupont De Nemours And Company Processes and donor elements for transferring thermally sensitive materials to substrates
JP2004303655A (ja) * 2003-03-31 2004-10-28 Fuji Photo Film Co Ltd 有機電界発光素子の製造方法及び有機電界発光素子
JP2005033172A (ja) * 2003-06-20 2005-02-03 Sharp Corp 半導体装置およびその製造方法ならびに電子デバイス
WO2005022959A2 (en) * 2003-08-22 2005-03-10 3M Innovative Properties Company Electroluminescent devices and methods
JP2005081299A (ja) * 2003-09-10 2005-03-31 Seiko Epson Corp 成膜方法、配線パターンの形成方法、半導体装置の製造方法、電気光学装置、及び電子機器

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4252671A (en) 1979-12-04 1981-02-24 Xerox Corporation Preparation of colloidal iron dispersions by the polymer-catalyzed decomposition of iron carbonyl and iron organocarbonyl compounds
US5256506A (en) 1990-10-04 1993-10-26 Graphics Technology International Inc. Ablation-transfer imaging/recording
US5166024A (en) 1990-12-21 1992-11-24 Eastman Kodak Company Photoelectrographic imaging with near-infrared sensitizing pigments
US5408109A (en) 1991-02-27 1995-04-18 The Regents Of The University Of California Visible light emitting diodes fabricated from soluble semiconducting polymers
DE4204949A1 (de) 1992-02-19 1993-09-09 Hoechst Ag Verfahren zur herstellung eines mehrfarbenbilds und lichtempfindliches material zur durchfuehrung dieses verfahrens
US5351617A (en) 1992-07-20 1994-10-04 Presstek, Inc. Method for laser-discharge imaging a printing plate
EP0676461B1 (de) 1994-04-07 2002-08-14 Covion Organic Semiconductors GmbH Spiroverbindungen und ihre Verwendung als Elektrolumineszenzmaterialien
US20010031378A1 (en) * 1994-09-30 2001-10-18 Willi Kreuder Poly (paraphenylenevinylene) derivatives and their use as electroluminescence materials
DE4436773A1 (de) 1994-10-14 1996-04-18 Hoechst Ag Konjugierte Polymere mit Spirozentren und ihre Verwendung als Elektrolumineszenzmaterialien
US5708130A (en) 1995-07-28 1998-01-13 The Dow Chemical Company 2,7-aryl-9-substituted fluorenes and 9-substituted fluorene oligomers and polymers
WO1997005184A1 (en) 1995-07-28 1997-02-13 The Dow Chemical Company 2,7-aryl-9-substituted fluorenes and 9-substituted fluorene oligomers and polymers
WO1997020877A2 (de) 1995-12-01 1997-06-12 Ciba Specialty Chemicals Holding Inc. Poly(9,9'-spirobisfluorene), deren herstellung und deren verwendung
US5929194A (en) 1996-02-23 1999-07-27 The Dow Chemical Company Crosslinkable or chain extendable polyarylpolyamines and films thereof
JP4112007B2 (ja) 1996-03-04 2008-07-02 デュポン ディスプレイズ， インコーポレイテッド フォトルミネセンスおよびエレクトロルミネセンス用材料としてのポリフルオレン
US5695907A (en) 1996-03-14 1997-12-09 Minnesota Mining And Manufacturing Company Laser addressable thermal transfer imaging element and method
US5725989A (en) 1996-04-15 1998-03-10 Chang; Jeffrey C. Laser addressable thermal transfer imaging element with an interlayer
US5710097A (en) 1996-06-27 1998-01-20 Minnesota Mining And Manufacturing Company Process and materials for imagewise placement of uniform spacers in flat panel displays
US5998085A (en) 1996-07-23 1999-12-07 3M Innovative Properties Process for preparing high resolution emissive arrays and corresponding articles
US5728801A (en) 1996-08-13 1998-03-17 The Dow Chemical Company Poly (arylamines) and films thereof
GB9711237D0 (en) 1997-06-02 1997-07-23 Isis Innovation Organomettallic Complexes
US6242115B1 (en) 1997-09-08 2001-06-05 The University Of Southern California OLEDs containing thermally stable asymmetric charge carrier materials
US6030715A (en) 1997-10-09 2000-02-29 The University Of Southern California Azlactone-related dopants in the emissive layer of an OLED
US6150043A (en) 1998-04-10 2000-11-21 The Trustees Of Princeton University OLEDs containing thermally stable glassy organic hole transporting materials
CN1322061C (zh) 1998-02-04 2007-06-20 默克专利股份有限公司 螺环化合物作为激光染料的用途
GB9820805D0 (en) 1998-09-25 1998-11-18 Isis Innovation Divalent lanthanide metal complexes
JP2000195673A (ja) 1998-12-25 2000-07-14 Sanyo Electric Co Ltd 有機エレクトロルミネッセント素子及び発光素子
US6114088A (en) 1999-01-15 2000-09-05 3M Innovative Properties Company Thermal transfer element for forming multilayer devices
KR100913568B1 (ko) 1999-05-13 2009-08-26 더 트러스티즈 오브 프린스턴 유니버시티 전계인광에 기초한 고 효율의 유기 발광장치
US6221543B1 (en) 1999-05-14 2001-04-24 3M Innovatives Properties Process for making active substrates for color displays
US6228543B1 (en) 1999-09-09 2001-05-08 3M Innovative Properties Company Thermal transfer with a plasticizer-containing transfer layer
US6521324B1 (en) 1999-11-30 2003-02-18 3M Innovative Properties Company Thermal transfer of microstructured layers
US6228555B1 (en) 1999-12-28 2001-05-08 3M Innovative Properties Company Thermal mass transfer donor element
US6284425B1 (en) 1999-12-28 2001-09-04 3M Innovative Properties Thermal transfer donor element having a heat management underlayer
TWI252592B (en) * 2000-01-17 2006-04-01 Semiconductor Energy Lab EL display device
US6242152B1 (en) 2000-05-03 2001-06-05 3M Innovative Properties Thermal transfer of crosslinked materials from a donor to a receptor
US6358664B1 (en) 2000-09-15 2002-03-19 3M Innovative Properties Company Electronically active primer layers for thermal patterning of materials for electronic devices
KR20020038482A (ko) * 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
US20020158574A1 (en) 2001-04-27 2002-10-31 3M Innovative Properties Company Organic displays and devices containing oriented electronically active layers
US6485884B2 (en) 2001-04-27 2002-11-26 3M Innovative Properties Company Method for patterning oriented materials for organic electronic displays and devices
US6699597B2 (en) 2001-08-16 2004-03-02 3M Innovative Properties Company Method and materials for patterning of an amorphous, non-polymeric, organic matrix with electrically active material disposed therein
JP2003077651A (ja) 2001-08-30 2003-03-14 Sharp Corp 有機エレクトロルミネッセンス素子の製造方法
US20030124265A1 (en) 2001-12-04 2003-07-03 3M Innovative Properties Company Method and materials for transferring a material onto a plasma treated surface according to a pattern
KR20030064028A (ko) * 2002-01-25 2003-07-31 한국전자통신연구원 전계 발광 소자 및 그 제조 방법
US6821348B2 (en) 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
US6897164B2 (en) 2002-02-14 2005-05-24 3M Innovative Properties Company Aperture masks for circuit fabrication
DE10215311A1 (de) * 2002-04-08 2003-11-06 Hammelmann Paul Maschf Dichtungseinrichtung
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
US20040004433A1 (en) 2002-06-26 2004-01-08 3M Innovative Properties Company Buffer layers for organic electroluminescent devices and methods of manufacture and use
TW569644B (en) * 2002-08-06 2004-01-01 Chi Mei Optoelectronics Corp Plastic substrate for organic electroluminescent display element, manufacturing method thereof and organic electroluminescent display element made by the substrate
CN100358169C (zh) * 2003-02-11 2007-12-26 统宝光电股份有限公司 一种主动式有机电激发光显示器的制作方法

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002289859A (ja) * 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP2002359075A (ja) * 2001-03-29 2002-12-13 Sharp Corp 有機エレクトロルミネッセンス表示パネルおよびその製造方法
JP2003077658A (ja) * 2001-09-05 2003-03-14 Sharp Corp 有機ｅｌ素子製造用ドナーフィルムおよび有機ｅｌ素子用基板
JP2003086808A (ja) * 2001-09-10 2003-03-20 Masashi Kawasaki 薄膜トランジスタおよびマトリクス表示装置
WO2003098699A1 (fr) * 2002-05-22 2003-11-27 Sharp Kabushiki Kaisha Dispositif semiconducteur et afficheur comprenant ce dispositif
JP2004071554A (ja) * 2002-07-25 2004-03-04 Sanyo Electric Co Ltd 有機ｅｌパネルおよびその製造方法
JP2004253389A (ja) * 2003-02-18 2004-09-09 Eastman Kodak Co 多色有機発光表示装置
JP2004281182A (ja) * 2003-03-14 2004-10-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
WO2004087434A1 (en) * 2003-03-27 2004-10-14 E.I. Dupont De Nemours And Company Processes and donor elements for transferring thermally sensitive materials to substrates
JP2004303655A (ja) * 2003-03-31 2004-10-28 Fuji Photo Film Co Ltd 有機電界発光素子の製造方法及び有機電界発光素子
JP2005033172A (ja) * 2003-06-20 2005-02-03 Sharp Corp 半導体装置およびその製造方法ならびに電子デバイス
WO2005022959A2 (en) * 2003-08-22 2005-03-10 3M Innovative Properties Company Electroluminescent devices and methods
JP2005081299A (ja) * 2003-09-10 2005-03-31 Seiko Epson Corp 成膜方法、配線パターンの形成方法、半導体装置の製造方法、電気光学装置、及び電子機器

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10910408B2 (en) 2008-10-03 2021-02-02 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2019033286A (ja) * 2008-10-03 2019-02-28 株式会社半導体エネルギー研究所 半導体装置
US10573665B2 (en) 2008-10-03 2020-02-25 Semiconductor Energy Laboratory Co., Ltd. Display device
US12094884B2 (en) 2008-10-03 2024-09-17 Semiconductor Energy Laboratory Co., Ltd. Display device
US11574932B2 (en) 2008-10-03 2023-02-07 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2019091938A (ja) * 2009-07-31 2019-06-13 株式会社半導体エネルギー研究所 半導体装置
JP2018182332A (ja) * 2009-12-11 2018-11-15 株式会社半導体エネルギー研究所 半導体装置
JP2020115546A (ja) * 2009-12-25 2020-07-30 株式会社半導体エネルギー研究所 半導体装置
KR102162442B1 (ko) * 2013-12-26 2020-10-06 엘지디스플레이 주식회사 투명 유기 발광 표시 장치
KR20150075738A (ko) * 2013-12-26 2015-07-06 엘지디스플레이 주식회사 투명 유기 발광 표시 장치
KR102235704B1 (ko) * 2020-09-25 2021-04-01 엘지디스플레이 주식회사 투명 유기 발광 표시 장치
KR20210038517A (ko) * 2020-09-25 2021-04-07 엘지디스플레이 주식회사 투명 유기 발광 표시 장치
KR20200115430A (ko) * 2020-09-25 2020-10-07 엘지디스플레이 주식회사 투명 유기 발광 표시 장치
KR102522070B1 (ko) * 2020-09-25 2023-04-13 엘지디스플레이 주식회사 투명 유기 발광 표시 장치

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CN101156244A (zh) 2008-04-02
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TW200644313A (en) 2006-12-16
EP1866966A1 (en) 2007-12-19
KR101202515B1 (ko) 2012-11-16
US7645478B2 (en) 2010-01-12
KR20070116053A (ko) 2007-12-06

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