CN101156244B - 显示器的制造方法 - Google Patents
显示器的制造方法 Download PDFInfo
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- CN101156244B CN101156244B CN2006800110096A CN200680011009A CN101156244B CN 101156244 B CN101156244 B CN 101156244B CN 2006800110096 A CN2006800110096 A CN 2006800110096A CN 200680011009 A CN200680011009 A CN 200680011009A CN 101156244 B CN101156244 B CN 101156244B
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- electrode
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- thermal transfer
- transfer layer
- film transistor
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Abstract
本发明描述了形成显示器的方法。该显示器具有集成到与氧化锌像素晶体管和有机发光二极管同一显示器基板上的氧化锌行和列驱动器。至少部分地利用从施主薄片的热转移工艺制备该有机发光二极管。
Description
技术领域
提供了形成显示器的方法。显示器具有集成到与氧化锌像素晶体管和有机发光二极管同一显示器基板上的氧化锌行和列驱动器。
背景技术
显示器背板(backplane)是显示器装置例如液晶显示器(LCD)、有机发光二极管显示器(OLED)或其它显示技术中的重要部件。显示器背板包括用作在其上形成电路以使显示屏显示图像的平台的基板。一般,这种显示器的背板包括像素晶体管阵列,其提供电信号给像素元件阵列例如OLED单元,以产生导致图像可见的光。用于显示器的另外电路包括行和列驱动器,它们一般不定位于背板上。行和列驱动器解码进入的视频数据以单独激活像素晶体管并由此单独控制像素。
由于像素晶体管一般位于背板本身上,所以当用在薄的显示器例如薄屏计算机和电视监控器、电话和其它小型装置中时,像素晶体管形成为薄膜晶体管。由于行和列驱动器一般不定位于背板上,所以它们不必是薄膜晶体管。然而,行和列驱动器占用了单独的空间,例如在安装在显示器电路板上的集成电路芯片上。
行和列驱动器与背板阵列之间的互连可以是复杂的。随着行和列数目的增加,互连密度也增加。即使当行和列驱动器是接合到玻璃的硅芯片时,互连复杂程度也可以非常高。
在一些显示屏应用中希望消除或为其它目的开放行和列驱动器芯片所需的空间,和/或使行和列驱动器更紧密接近于像素晶体管。因此,希望将行和列驱动器与像素晶体管一起直接移到背板上。然而,由于行和列驱动器必须具有非常快的开关能力,所以利用低迁移率半导体沟道例如非晶硅的常规薄膜晶体管构造存在问题。
尤其是对于基于有机发光二极管的显示器,具有包括尽可能大电子迁移率的半导体的薄膜晶体管是有利的。通常,电子迁移率直接影响晶体管速度和/或晶体管尺寸。像非晶硅一样的半导体可以具有大约0.5cm2/V-sec量级的场效应迁移率。例如多晶硅的材料具有较高的迁移率(大于20cm2/V-sec),但需要较高的处理温度和更复杂的制备工序。
发明内容
本发明的实施例通过提供显示器和制作显示器的方法来解决这些以及其他问题,所述显示器以及制作显示器的方法利用单片集成到(就是说,同时图案化且通过基本相同的工艺)显示器基板上的行和列驱动器和像素晶体管,同时还利用有机发光二极管(OLED)作为显示元件。行和列驱动器以及像素晶体管构造为具有氧化锌(ZnO)沟道的薄膜晶体管,其具有足够高的迁移率,以实现正确解码显示信号和激活(activate)OLED像素所需要的开关速度。氧化锌行和列驱动器对激活用以在显示屏上形成图像的OLED阵列的氧化锌像素晶体管寻址。
形成显示器的方法包括在显示器基板(例如,背板基板)上图案化一组氧化锌沟道薄膜晶体管行和列驱动器。该方法进一步包括在显示器基板上图案化一组氧化锌沟道像素薄膜晶体管,以使得像素薄膜晶体管与薄膜行和列驱动器电连接。该方法还包括在显示器基板上形成一组有机发光二极管。每个有机发光二极管包括第一电极、第二电极、和位于第一电极与第二电极之间的发光材料。通过提供与至少一个像素薄膜晶体管电连接的第一电极、制备包括第一施主基板和包括第一发光材料的第一热转移层的第一施主薄片、从第一施主基板转移第一转移层以使得第一热转移层邻近第一电极、以及淀积第二电极以使得第一热转移层定位在第一电极和第二电极之间,形成有机发光二极管中的至少一个。
如这里所使用的,术语“邻近”指的是一层定位在另一层附近。邻近的层可以接触或隔开一层或多层。一般邻近的层彼此对准以便一个层的区域在另一层的区域内。
本发明的上述内容并不是指描述本发明每个公开的实施例或每个实施方式。图、具体实施方式和随后的实例具体示例了这些实施例。
附图说明
结合附图考虑本发明各实施例的以下详细描述,可以更完全地理解本发明,其中:
图1示出了可以用于在共用显示器基板上构造氧化锌行和列驱动器以及氧化锌像素晶体管的孔径掩模(aperture masking)工艺。
图2示出了具有驱动远离显示器基板发光的顶发射型OLED的氧化锌薄膜像素晶体管的基板的一个实例的截面图。
图3示出了具有驱动穿过显示器基板发光的底发射型OLED的氧化锌薄膜像素晶体管基板的另一实例的截面图。
图4A至4D是各种OLED结构的示例性实例。
图5是在制备OLED时利用的施主薄片的示例性实例。
图6是形成显示器单一像素的OLED电路和氧化锌像素晶体管的一个单元的示例性实例。
图7是形成显示器像素阵列的OLED电路和氧化锌像素晶体管的单元阵列的示例性实例。
图8是形成显示器单一像素的OLED电路和氧化锌像素晶体管的一个单元的另一示例性实例。
图9是基于氧化锌薄膜晶体管的数字逻辑(NOR)门的示例性实例,其用于生成与单元阵列接口连接的行和列驱动器电路。例如,该单元阵列可以如图7所示,基于图6或图8的电路。
图10是用于生成部分行和列驱动器电路的利用基于氧化锌薄膜晶体管的数字逻辑门形成的数字逻辑触发器的示例性实例。例如,该数字逻辑门可以如图9所示。
图11是用以提供部分行或列驱动器电路的利用利于氧化锌薄膜晶体管的数字逻辑触发器形成的数字逻辑移位寄存器的示例性实例。例如,该数字逻辑触发器可以如图10所示。
虽然本发明适于各种修改和可选形式,但在附图中以实例的方式示出了其细节且将详细描述其细节。然而,应当理解,这并不是意图将本发明限制于所描述的特定实施例。相反,意图是覆盖落入本发明精神和范围内的所有修改、等效和替换物。
具体实施方式
本发明提供了形成显示器的方法,该显示器具有集成到与氧化锌像素晶体管和OLED相同的显示器基板(例如,背板基板)上的氧化锌行和列驱动器的组合。这些所得到的显示器提供了OLED的优良观看特性与以及集成的行和列驱动器的紧凑性和减少了的外部互连。氧化锌半导体可以具有直至至少5cm2/V-sec、直至至少10cm2/V-sec、直至至少15cm2/V-sec或直至至少20cm2/V-sec的场效应迁移率。这些相对较高的迁移率能够允许,例如,高的晶体管开关速度、行和列驱动器的高的数据速率,或它们的组合。
形成显示器的方法包括:在显示器基板上图案化一组氧化锌沟道薄膜晶体管行和列驱动器。该方法进一步包括:在显示器基板上图案化一组氧化锌沟道像素薄膜晶体管,以使得像素薄膜晶体管与薄膜行和列驱动器电连接。该方法还包括在显示器基板上图案化一组有机发光二极管。每个有机发光二极管包括第一电极、第二电极、和位于第一电极和第二电极之间的发光材料。通过提供与至少一个像素薄膜晶体管电连接的第一电极、制备包括第一施主基板和包括第一发光材料的第一热转移层(thermal transfer layer)的第一施主薄片、从第一施主基板转移第一转移层以使得第一热转移层邻近第一电极、以及淀积第二电极以使得第一热转移层设置在第一电极和第二电极之间转移,来形成至少一个有机发光二极管。
能够改变图案化或形成有机发光二极管、像素薄膜晶体管、和行和列驱动器薄膜晶体管的次序。此外,可以在部分地形成或完整地形成有机发光二极管之前或之后,部分地或完整地形成任意晶体管。
能够利用本领域中已知的多种技术在显示器基板上图案化晶体管。在一些实施例中,可利用光刻来图案化用作行和列驱动器的薄膜晶体管以及像素薄膜晶体管。在其它实施例中,可利用孔径掩模来图案化用作行和列驱动器的薄膜晶体管以及像素薄膜晶体管。在其它实施例中,可以利用光刻形成行和列驱动器薄膜晶体管,而利用遮光掩模(shadow mask)形成像素薄膜晶体管,或者可以利用遮光掩模形成行和列驱动器薄膜晶体管,而利用光刻形成像素薄膜晶体管。
在US专利申请公开No.2003/0152691和US2003/0150384中提出了利用制备晶体管的孔径掩模的示例性工序,通过参考将其结合在此。为了进一步示例孔径掩模工艺,图1是淀积台的简图,该淀积台可以使用用于图案化薄膜晶体管行和列驱动器、像素薄膜晶体管、或二者的孔径掩模。尤其是,可以构造淀积台10以执行气相淀积工艺,其中使材料汽化并通过孔径掩模20淀积在显示器基板12上。淀积材料可以是适合于薄膜晶体管层的任何材料,包括用于形成不同元件的半导体材料、介质材料、或导电材料。例如,可以淀积有机或无机材料。在一些情况下,可以淀积有机和无机材料两者。
具有开口图案的孔径掩模20,设置在淀积台10内的显示器基板12附近。根据要生成的期望的显示器电路,显示器基板12可包括任意的多种材料。例如,显示器基板12可以包括柔性材料、刚性材料、或其组合。也可以使用任意显示器基板,例如玻璃基板、硅基板、刚性塑料基板、涂有绝缘层的金属箔等。
典型的,淀积台10为真空室。在将孔径掩模20中的图案固定邻近于显示器基板12之后,可使用淀积单元14来淀积材料16。例如,淀积单元14可包括被溅射以淀积材料16的靶。淀积材料通过孔径掩模20的开口在显示器基板12上形成图案。可使用淀积材料以在显示器基板12上提供至少一部分电路层。通过孔径掩模20中的开口的图案来限定显示器基板12上的淀积图案。孔径掩模20可包括足够小的开口和间隙,以便于使用如上所述的淀积工艺生成小电路元件。另外,孔径掩模20中的图案可以具有任何合适的尺寸。除溅射之外,也可使用多种其它淀积技术,例如e-束蒸发、电阻加热、脉冲激光淀积等。
此外,可以使用通过孔径掩模20的淀积来图案化同样存在于该显示器基板上且与像素薄膜晶体管电连接的OLED的一层或多层。在一些实施例中,可以使用孔径掩模制备OLED的一层或多层,而使用热转移工艺制备一层或多个其它层。例如,可以使用孔径掩模淀积电荷传输层、电荷注入层、电荷阻挡层、缓冲层或它们的组合,而使用热转移技术形成至少一个发光层。实例12进一步示例了通过利用孔径掩模图案化薄膜晶体管和OLED的至少一层的一种方法。
使用由聚合材料例如聚酰亚胺构造的孔径掩模,而不是由金属构造的孔径掩模,可能有利。在一些实施例中,聚合孔径掩模是可复位的(repositionable)。使用聚合孔径掩模而不是金属孔径掩膜来用于图案化的一个优点包括潜在地减少了通过孔径掩模对用于构造薄膜晶体管或OLED的各种材料的损伤。使用聚合孔径掩模的另一优点包括伸展孔径掩模以减轻由于各种原因例如热膨胀而引起的掩模中尺寸变化的能力。
作为对孔径掩模工序的替换方案,可以通过光刻来图案化基于氧化锌的薄膜晶体管电路。可以使用公知的光刻工艺来限定氧化锌像素电路。在Badih E1-Kareh所著的Fundamentals of Semiconductor Processing Technologies(半导体工艺技术基础),Kluwer AcademicPublishers(Boston)出版、第4章第590-592页(1995)中,公开了这种光刻工艺的实例。因此,为了示例的目的提供了图1的孔径掩模工艺,且并非限制用于于图案化显示器的薄膜晶体管的方法。光刻技术可以允许在室温或在温度不高于50℃、不高于80℃,或不高于100℃时氧化锌像素电路淀积。这些相对低的淀积温度能允许使用不可与需要较高淀积温度的某些其它半导体例如多晶硅一起使用的显示器基板材料。
图2的实例示例了在共用显示器基板42顶部上的像素薄膜晶体管和OLED的淀积。在该实例中,OLED 56是顶部发射型(也就是说,背离而不是穿过显示器基板发射)。如参考图1以上所述的,显示器基板42可以由刚性、柔性、或其结合的各种材料构成。适当的基板包括玻璃,金属箔,聚合材料例如聚烯烃、聚醚砜、聚碳酸酯、聚酯(例如,聚对苯二甲酸乙二醇酯或聚萘二甲酸乙二醇酯)、多芳基化合物和聚酰亚胺、聚合多层薄膜等。
将由导电材料例如钛和金构造的栅电极44直接图案化到显示器基板42上,然后可以将栅电介质46例如氧化硅(SiO2)或氧化铝(Al2O3)图案化在栅电极44的顶部上,以使栅电极44与半导体沟道48完全隔离。半导体沟道48是图案化在栅电介质46顶部上的一层氧化锌。也就是说,栅介质46位于栅电极44和半导体沟道48之间。
将由导电材料例如铝构造的漏电极52图案化在半导体沟道48的一侧上,同时将分离的源电极50图案化在半导体沟道48的另一侧上。用于漏电极52和源电极50的导电材料可以是相同的或可以是不同的。源电极50延伸到显示器基板42上并且位于显示器基板42和OLED 56的其它部分之间。源电极50的延伸部分可以用作OLED 56的第一电极。可以将由材料例如可光成像的环氧树脂或其它材料例如氧化硅构造的密封层54,图案化在包括源/漏电极50、52和沟道48的薄膜晶体管层的上方,同时在形成OLED 56的源电极50的区域上方留下空隙。应该注意,术语源电极50和漏电极52的使用在某种意义上是随意的,因为将意识到OLED 56的第一电极根据选定的电路设计可以与源极或与漏极电连接。
典型地,将源电极和漏电极特征图案化,以便使1微米到50微米(例如,1到40微米、5到40微米、1到30微米、5到30微米、1到20微米或5到20微米)的半导体沟道长度分开它们。对于光刻图案化的薄膜晶体管,栅长度可以小至1微米或更小,典型的为5微米。对于孔径掩模图案化的薄膜晶体管,栅长度更可能是5到60微米,典型栅长度为20到30微米。
在图案化包括图2的像素薄膜晶体管的薄膜晶体管层的一些示例性工艺中,可以通过利用孔径掩模图案化薄膜晶体管。在图案化包括图2的像素薄膜晶体管的薄膜晶体管层的其它示例性工艺中,可以利用光刻图案化该薄膜晶体管。在实例1中描述了利用光刻的图案化的示例性方法。在任一情况下,可以在基本相同的时间和通过基本相同的工艺图案化薄膜晶体管,以使得薄膜晶体管行和列驱动器和像素薄膜晶体管单片集成到显示器基板42上。
OLED 56包括位于第一电极和第二电极之间的一层或多层有机材料、有机金属材料、无机材料或它们的组合。这些层中的至少一层包括发光材料,其为在被电激活时发光的电致发光材料。可以包括在这些层中的其它适当的材料包括:电荷传输材料、电荷阻挡材料、电荷注入材料、缓冲材料等。如以下描述的,在图4A到4D中阐明了各种示例性实例的OLED 56内的这些材料和它们特定顺序。
为了完成电流通过OLED 56的路径,图案化第二电极55以使发光材料位于第一电极50和第二电极55之间。典型地,对准第一电极50和第二电极55。第二电极55通常由透明材料例如铟锡氧化物(ITO)或薄金属层构造,以使得可以穿过第二电极55发射光。在接收到电流时,OLED 56的电致发光材料可以发光。
在图2结构的操作中,施加电压到漏电极52。然而,由于半导体沟道48保持在低导电率状态,非常小的电流可以流到源电极50,除非也施加电压到栅电极44。在施加电压到栅电极44时,该半导体沟道48变得更导电并且电流流过半导体沟道到源电极50和流过OLED 56,从而使OLED 56发射光58背离显示器基板42。因此,以这种方式处理的TFT和OLED的阵列导致显示图像。
图3的实例示出了在由例如玻璃或透明聚合物的材料构造的共用透明显示器基板62的顶部上淀积像素薄膜晶体管和OLED,其中OLED是底部发射型(也就是,穿过基板发射光)。将栅电极64直接图案化到显示器基板62上,然后将栅电介质66图案化在栅电极64的顶部上,以使栅电极64与半导体沟道68完全隔离。半导体沟道68也是图案化在栅电介质66顶部上的氧化锌层。将漏电极72图案化在半导体沟道68的一侧上,同时将分开的源电极70图案化在半导体沟道68的另一侧上。源电极70与透明的OLED第一电极77例如ITO电极连接,以使得OLED能够穿过第一电极77和显示器基板62发射光。可以将也由例如可光成像的环氧树脂或者其它材料例如氧化硅的材料构造的密封层74,图案化在包括源/漏电极70、72和半导体沟道68的薄膜晶体的层上方,同时在图案化透明第一电极77和OLED 76的其余区域的上方留下空隙。第二电极75淀积在OLED 76的顶部上,以使发光材料包含在第一电极77和第二电极75之间的层中。
在操作中,施加电压到漏电极72。然而,由于半导体沟道68保持低导电率状态,非常小的电流穿向源电极70,除非也施加电压到栅电极64。在施加电压到栅电极64时,半导体沟道68就变得更导电并且电流流过半导体沟道到源电极70和流过OLED 76,从而使OLED发射光78穿过第一电极77和显示器基板62。以这种方式处理的TFT和OLED阵列导致显示图像。
OLED包括至少一种发光材料。这种发光材料是在被电激活时发光的电致发光材料。每个OLED具有至少一个发光层。当激活OLED时,电子从阴极(例如,第二电极)注入到发光层而空穴从阳极(例如,第一电极)注入到发光层。由于注入的电荷向相反的带电电极移动,它们能够在发光层内复合以形成一般称为激子的电子-空穴对。一般形成激子的器件的区域可称为复合区。这些激子或激发态核素衰退回到基态时,能够以光的形式发射能量。
除发光层之外,在第一电极和第二电极之间的OLED层中也可以存在其它任选层。这些其它层包括空穴传输层、电子传输层、空穴注入层、电子注入层、空穴阻挡层、电子阻挡层、缓冲层等。另外,电致发光材料可以存在于OLED的发光层或其它层中,例如把电致发光材料发射的光的颜色转变为其它颜色。这些和其它这种层和材料可以用于改变或调谐OLED的电特性和性态,例如,以实现期望的电流/电压响应、期望的器件效能、期望的颜色、期望的亮度等。
图4A到图4D示例了各种示范性的OLED结构。每个结构包括显示器基板250、阳极252(例如第一电极)、阴极254(例如,第二电极)和发光层256。图4C和4D的结构还包括空穴传输层258,图4B和4D的结构包括电子传输层260。这些层分别从阳极传导空穴或从阴极传导电子。
典型地,利用导电材料形成阳极252和阴极254,例如金属、合金、金属性化合物、导电金属氧化物、导电分散体(conductive dispersion)和导电聚合物,包括例如金、银、镍、铬、钡、铂、钯、铝、钙、钛、铟锡氧化物(ITO)、氟锡氧化物(FTO)、锑锡氧化物(ATO)、铟锌氧化物(IZO)、聚(3,4-乙撑二氧基噻吩)/聚(苯乙烯磺酸酯)、聚苯胺、其它导电聚合物、它们的合金或它们的组合物。阳极252和阴极254可以是单层导电材料或可以包括多层导电材料。例如,阳极和阴极可包括铝层和金层、钙层和铝层、铝层和氟化锂层、或金属层和导电的有机层。
涂覆基板的阳极252材料可以是导电的并且可以是透光的、半透明的或不透明的。有机电致发光器件的典型阳极是铟锡氧化物(ITO)。除了ITO之外,适当的阳极材料包括氧化铟、氟锡氧化物(FTO)、氧化锌、铟锌氧化物(IZO)、氧化钒、锌锡氧化物、金、铂、钯、银、其它的高功函数金属、和它们的组合。许多适当的阳极具有包含一种或多种金属氧化物的表面。
在一些实施例中,可以由与用于形成像素薄膜晶体管中的源电极或漏电极的相同的导电材料来制造阳极。如果希望的话,可以与像素薄膜晶体管中的相应电极同间或不同时地形成这种阳极。在其它实施例中,由与用于形成像素薄膜晶体管中的源电极或漏电极的导电材料不同的导电材料来制造阳极。
典型的阴极254包括低功函数金属,例如铝、钡、钙、钐、镁、银、镁/银合金、锂、镱和钙/镁合金。阴极可以是单层或多层这些材料。例如,阴极可以包括一层氟化锂、一层铝和一层银。阴极254可以是透明的、半透明的或不透明的。
在一些实施例中,可以由与用于形成像素薄膜晶体管中的源电极或漏电极的相同导电材料来制造阴极。如果希望的话,可以与像素薄膜晶体管中的相应电极同时或不同时地形成这种阴极。在其它实施例中,由与用于形成像素薄膜晶体管中的源电极或漏电极的导电材料不同的导电材料来制造阴极。
OLED的每个结构包括发光层256,该发光层256包括一种或多种发光聚合物(LEP)或其它发光材料例如小分子(SM)发光化合物。可以使用包括LEP和SM发光化合物的多种发光材料。
在一些实施例中,发光层包含发光聚合物。LEP材料典型为优选对于溶解工艺具有足够的膜形成特性的结合聚合物或寡聚分子。如这里使用的,“结合聚合物或寡聚分子”指的是具有沿聚合物主链(backbone)移位的π-电子系统的聚合物或低聚体。这种聚合物或低聚体有半导体特性的并且可以支持沿聚合物或低聚体链的正和负电荷载流子。
示范性的LEP材料包括聚(苯撑乙烯撑)(poly(phenylenevinylenes))、聚(对亚苯基)、聚芴、目前已知的或后来开发的其它LEP材料、和共聚物或它的混合物。合适的LEP也可以掺杂有小分子发光化合物、分散有荧光或磷光染料或光致发光材料、混合有活性或非活性材料、分散有活性或非活性材料等。在Kraft等人的Angew.Chem. Int.Ed.37、402-428(1998);U.S.专利No.5,621,131;5,708,130;5,728,801;5,840,217;5,869,350;5,900,327;5,929,194;6,132,641和6,169,163;和PCT专利申请公开No.99/40655中进一步描述了合适的LEP材料的实例。
SM材料通常是非聚合的、有机的或有机金属分子材料,该材料可以用于OLED显示器和器件中作为发射极材料、电荷传输材料、发射极层中的掺杂剂(例如,为控制发光颜色)或电荷传输层等。示范性的SM材料包括N,N’-双(3-甲基苯基)-N,N’-二苯基联苯胺(TPD))和金属螯合物,例如三(8-羟基喹啉)铝(Alq3)和联苯合双(8羧基喹啉)铝(BAlq)。例如,在C.H.Chen等人,Macromol.Symp.125,1(1997);日本特开专利申请2000-195673;U.S.专利No.6,030,715;6,150,043;和6,242,115;和PCT专利申请公开No.WO 00/18851(二价镧系金属络合物)、WO 00/70655(环金属化的(cyclometallated)铱化合物等)和WO 98/55561中公开了其它SM材料。这些小分子中的一些可以是荧光的和/或磷光的。
发光层可以包含与掺杂剂结合的主材料(host material)。主材料的激发态典型地在比掺杂剂的激发态高的能级,以便能量可以从主材料转移到掺杂剂。受激发的主材料典型发出比受激发的掺杂剂波长短的光。例如,发射蓝光的主材料可以转移能量到发射绿或红光的掺杂剂,并且发射绿光的主材料可以转移能量到发射红光的掺杂剂而不能到发射蓝光的掺杂剂。示范性的主材料和掺杂剂化合物包括、但并不限制于,掺杂有香豆素染料的三(8-羟基喹啉)铝和掺杂有红荧烯的三(8-羟基喹啉)铝。
空穴传输层258促进了空穴从阳极到器件中的注入以及它们朝向复合区的移动。空穴传输层258可以进一步用作对电子到阳极252的通路的阻挡层。空穴传输层258可以包括例如双胺衍生物,例如N,N′-二(3-甲基苯基)-N,N′-二(苯基)联苯胺(TPD)、N,N′-二(2-萘基)-N,N′-二(苯基)联苯胺(beta-NPB)、N,N′-二(1-萘基)-N,N′-二(苯基)联苯胺(NPB)等;或三芳基胺衍生物,例如4,4′,4″-三(N,N-二苯氨基)三苯胺(TDATA)、4,4′,4″-三(N-3-甲基苯基-N-苯氨基)三苯胺(MTDATA)、4,4′,4″-三(N-苯并嗪)三苯胺(TPOTA)、1,3,5-三(4-二苯氨基苯基)苯(TDAPB)等。
电子传输层260促进了电子的注入以及它们向发光层256内的复合区的移动。如果希望的话,电子传输层260可以进一步用作空穴到阴极254的通路的阻挡层。作为实例,电子传输层260可以利用有机金属化合物例如(8-羟基喹啉合)铝(Alq3)和联苯合双(8-羟基喹啉合)铝(BAlq)形成。在电子传输层260中,可用的电子传输材料的其它实例包括1,3-双[5-(4-(1,1-二甲基乙基)苯基)-1,3,4-二唑-2-基]苯;2-(联苯-4-基)-5-(4-(1,1-二甲基乙基)苯基)-1,3,4-二唑;9,10-二(2-萘基)蒽(ADN);2-(4-联苯基)5-(4-叔丁基苯基)-1,3,4-二唑;或3-(4-联苯基)-4-苯基-5-(4-叔丁基苯基)-1,2,4-三唑(TAZ)。
其它层例如包含例如像铜酞菁(CuPc)或锌酞菁的卟啉化合物的空穴注入层;包括例如碱金属氧化物或碱金属盐的电子注入层;包括例如分子二唑或三唑衍生物例如(2-(4-联苯基)-5-(4-叔丁基苯基)-1,3,4-二唑(PBD)、 2,9-二甲基-4,7-二苯基-1,10-phenanthraline(BCP)、联苯合双(8-羟基喹啉合)铝(BAlq)或3-(4-联苯基)-4-苯基-5(4-叔丁基苯基)-1,2,4-三唑(TAZ);包含例如N,N′-双(1-萘基)-N,N′-双(苯基)联苯胺(NPB)、或4,4′,4″-三(N-(3-甲基苯基)-N-苯氨基)三苯胺(MTDATA)等的电子阻挡层也可以存在于有机发射元件中。另外,光致发光材料可以存在于这些层中,例如,把电致发光材料发射的光颜色转变为另一颜色。这些和其它这种层和材料可以用于改变或调谐分层的OLED的电子特性和性态,例如,以实现一种或多种特征,例如期望的电流/电压响应、期望的器件效能、期望的颜色、期望的亮度、期望的器件寿命或这些特征的期望的结合。
OLED可选地具有典型涂布在阳极、阴极或其组合的一个表面上的缓冲层。缓冲层典型地便于从电极的注入并且还辅助电极的平坦化。该平坦化可以有助于减少或消除由于电极的非均匀性而引起的短路。另外,缓冲层有助于在缓冲层上形成其它层,包括通过热转移将其它层形成到缓冲层上。在美国专利申请公布2004/0004433 A1中进一步描述了一些示范性缓冲层,通过参考将其结合在此,这些示范性缓冲层可以包括三芳基胺空穴传输材料和电子受主材料。作为另一实例,阳极表面上的缓冲层可以包括结合聚合物和共混聚合物例如聚(亚乙基二氧基噻吩)/聚(苯乙烯磺酸酯),PEDOT/PSS)、小分子例如铜酞菁(CuPC)等。阴极表面上的缓冲层可以包括例如掺杂金属的小分子,例如共淀积有金属锂或锂盐的三(8-羧基喹啉)铝,Alq)。
虽然以上未具体论述,但将意识到,通过包括围住图2和3的OLED的密封剂,可以保护OLED不暴露到周围环境要素。图2和3的密封剂则进一步密封薄膜晶体管和OLED叠层。
通过提供与至少一个像素薄膜晶体管电连接的第一电极、制备包括第一施主基板和包含第一发光材料的第一热转移层的第一施主薄片、从第一施主基板转移第一转移层以使得第一热转移层邻近第一电极、并且淀积第二电极以使第一热转移层定位在第一电极和第二电极之间,来形成该组OLED中的至少一个OLED。
在形成OLED的工艺中,可以制备包括涂布在施主基板上的至少一个热转移层的施主薄片。然后可以经由从施主薄片到受主的选择性热转移来图案化该热转移层(例如,例如图案化在第一电极上或邻近第一电极)。受主是从施主薄片接收热转移层的表面。在一些实施例中,受主是第一电极。在其它实施例中,受主是在先前淀积在第一电极上的另一层,例如缓冲层、电荷传输层、电荷阻挡层、电荷注入层等。
将热转移层涂布到施主基板上之后经由从施主薄片选择性热转移进行图案化,表示涂布形成步骤与图案化步骤分离。分离涂布和图案化步骤的优点是,如果可能的话,可以利用常规的图案化工艺,将材料图案化在将难以图案化的其它材料的顶部或邻近该其它材料。例如,溶剂涂布层可以图案化在溶剂敏感材料的顶部上,而如果溶剂涂布层直接涂布在溶剂敏感材料上,该溶剂敏感材料将溶解、侵蚀、穿透和/或表现出不能够用于在存在溶剂的情况下所期望目的。
通过涂布具有一个或多个热转移层的施主基板来制备施主薄片。至少一个热转移层包括发光材料。例如,一个热转移层可以包括发光层,以及第二热转移层可以包括选自电荷传输材料、电荷阻挡材料、电荷注入材料、缓冲材料等的材料。
可以例如通过在施主基板上溶剂涂布第一材料、适当地干燥该涂层、以及然后淀积包括易受涂布第一材料所使用的溶剂影响的材料的第二层来制备具有多个热转移层的施主薄片。可以通过在涂布第二层之前蒸发或其它方式移除第一层的大量或大多数溶剂来减小或消除对第二层的损伤。多个层单元的热转移会导致受主上的转移层相对于施主薄片上的顺序相反的顺序。因为这些原因,可以在溶剂涂布层的下面图案化易受溶剂影响的层。另外,第一和第二层不需要从分离的施主薄片转移到受主。可以通过任何合适的方法图案化易受溶剂影响的材料,包括从施主的热转移,之后是利用另一施主转移涂布溶剂的材料的另一热转移步骤。同样适用于邻近(但并不必须接触)与溶剂不相容的受主上的材料或层的溶剂涂布材料的图案化的热转移。
如图5所示,施主薄片200可以包括施主基板210、任选的底层212、任选的光热转换(LTHC)层214、任选的夹层216和第一热转移层218。在邻近第一热层218的施主薄片中可以包括另外的热转移层。
施主基板210可以是聚合物膜或任何其它合适的、优选透明的基板。一个合适类型的聚合物膜是聚酯膜,例如聚对苯二甲酸乙二醇酯(PET)或聚萘二甲酸乙二醇酯(PEN)膜。然而,取决于特定的应用,可以使用具有足够光学特性的其它膜,所述特性包括在特定波长的高透光性、或足够的机械和热稳定性。施主基板在至少一些情形下是平的,以使得均匀的涂布可以形成于其上。典型地施主基板也选自不管加热施主薄片的一个还是多个层都保持稳定的材料。然而,如下所述,可以使用在基板和LTCH层之间的底层的包含物来使施主基板与在成像期间LTHC层中产生的热隔离。尽管可以使用更厚或更薄的施主基板,但施主基板的典型厚度从0.025至0.15mm、0.05至0.15mm、或0.05至0.1mm。
可以选择用于形成施主基板和可选的邻近底层所使用的材料,来提高施主基板和底层之间的粘接性,控制施主基板和底层之间的热传输、控制至LTHC层的成像辐射传输、减少成像缺陷等。可以使用任选的涂底层(priming layer)以在将随后的层涂布到施主基板上期间增加均匀性,增加施主基板和邻近层之间的结合强度、或其组合。
任选的底层212可以涂布或以其它方式设置在施主基板和LTHC层之间。底层可以用于在成像期间控制基板和LTHC层之间的热流,或在储存、操作、施主处理或成像期间对施主元件提供机械稳定性。在美国专利No.6,284,425中公布了合适的底层和提供底层的方法的实例,通过参考将其并入这里。
底层可以包括将所希望的机械或热性质给予施主元件的材料。例如,底层可以包括相对于施主基板显示出更低(具体的,热×密度)或更低导热性的材料。可以使用这种底层来增加到转移层的热量,例如提高施主的成像灵敏度。
底层还可以包括为了它们的机械性质添加的或增加施主基板和LTHC之间的粘接性而添加的材料。如果希望的话,利用提高施主基板和LTHC层之间的粘接性的底层可以导致转移的图像的更少失真。在一些情况下,可以使用底层减少或消除LTHC层的分层或分离,例如,其出现在施主薄片的成像期间。这可以减少由热转移层的转移部分显示出的物理扭曲量。然而在其它情况下,可能希望使用在成像期间促进层之间或当中的至少某些程度的分离的底层,例如,在成像期间产生提供热绝缘作用的层之间的气隙。在成像期间的分离还可以提供由在成像期间加热LTHC层而产生的气体释放的通道。提供这种通道可以导致更少的成像缺陷。
底层在成像波长上可以是基本透明的,或者可以是至少部分吸收或反射成像辐射的。由底层的成像辐射的衰减或反射可以用于控制成像期间的热产生。
图5中的LTHC层214可以包括在施主薄片中,以使辐射能耦合到施主薄片中。LTHC层一般包括吸收入射辐射(例如,激光)的吸收体并将至少一部分入射辐射转换成热,以使转移层从施主薄片转移到受主。
通常,LTHC层中的辐射吸收体吸收电磁频谱的红外光、可见光或紫外光区域的光并将吸收的辐射转换成热。辐射吸收体典型是对选择的成像辐射高吸收性的,提供具有在约0.2至3或更高范围的成像辐射波长的光密度的LTHC层。层的光密度是透过该层的光的强度与入射在该层上的光的强度之比的对数(基数10)的绝对值。
辐射吸收体材料可以均匀地设置在整个LTHC层上,或可以是非均匀分布的。例如,如美国专利No.6,228,555中描述的,非均匀的LTHC层可以用于控制施主薄片中的温度分布。这导致具有提高的转移性质(例如,在期望的转移图案和实际转移图案之间的良好保真度)的施主薄片。
合适的辐射吸收材料可以包括染料(例如,可见光染料、紫外线染料、红外线染料、荧光染料和辐射极化染料)、颜料、金属、金属化合物、金属膜等。示范性的辐射吸收体包括碳黑、金属氧化物、金属硫化物等。合适的LTHC层的一个实例可以包括颜料,例如碳黑,和结合剂,例如有机聚合物。另一合适的LTHC层包括形成为薄膜的金属或金属/金属氧化物,例如,黑铝(即,具有黑色外观的部分氧化的铝)。金属性的和金属化合物膜可以通过例如溅射和蒸发的技术淀积形成。微粒涂层可以利用结合剂和任何合适的干法或湿法涂布技术形成。LTHC层还包括具有相似或不同材料的两层或多层。例如,LTHC层可以通过在包含设置在结合剂中的碳黑的涂层上方气相淀积黑铝薄层而形成。
适合用作LTHC层中的辐射吸收体的染料会呈现特定的形式,溶解在结合剂材料中,或至少部分分散在结合剂材料中。当使用分散的特定辐射吸收体时,至少在一些情况下,颗粒大小可以是约10微米或更小,并且可以是约1微米或更小。合适的染料包括在频谱的IR区中吸收的那些染料。可以基于例如特定的结合剂或涂布溶剂中的溶解性和一致性、以及吸收的波长范围的因素,选择具体的染料。
颜料材料还可以用在LTHC层中作为辐射吸收体。合适颜料的实例包括碳黑和石墨、以及酞菁染料、镍二硫烯(nickel dithiolenes)和美国专利No.5,166,024和5,351,617中描述的其它颜料。另外,基于例如吡唑啉酮黄、联茴香胺红和镍络偶氮黄的铜或铬络合物的黑偶氮颜料是有用的。也可以使用无机颜料,例如,包括金属如铝、铋、锡、铟、锌、钛、铬、钼、钨、钴、铱、镍、钯、铂、铜、银、金、锆、铁、铅和碲的氧化物和硫化物。也可以使用金属硼化物、碳化物、氮化物、氮碳化物、青铜结构的氧化物、和结构上涉及青铜族的氧化物(例如,WO2.9)。
可以使用例如美国专利No.4,252,671中描述的颗粒形式的、或者如美国专利No.5,256,506中公开的薄膜形式的金属辐射吸收体。合适的金属例如包括铝、铋、锡、铟、碲和锌。
用于LTHC层中的合适的结合剂包括膜形成聚合物,例如,酚醛树脂(例如,酚醛清漆和甲阶酚醛树脂)、聚乙烯醇缩丁醛树脂、聚乙酸乙烯酯、聚乙烯醇缩乙醛、聚偏二氯乙烯、聚丙烯酸酯、纤维素醚和酯、硝化纤维和聚碳酸酯。合适的结合剂可以包括单体、低聚物、或已经或能聚合或交联的聚合物。还可以包括添加剂例如光敏引发剂,以促使LTHC结合剂的交联。在一些实施例中,主要利用具有任选聚合物的可交联单体或低聚物的涂层形成该结合剂。
在至少一些情况下,包含的热塑性树脂(例如,聚合物)可以提高LTHC层的性能(例如,转移性质或可涂布能力)。认为热塑性树脂可以提高LTHC层对施主基板的粘接性。在一个实施例中,结合剂包括25-50重量百分比的热塑性树脂(计算重量百分比时不包括溶剂)。例如,结合剂可以包括25-45重量百分比或30至34重量百分比的热塑性树脂。在其它实施例中,结合剂包含1-30重量百分比、1至20重量百分比、或1至15重量百分比的热塑性树脂。典型地,选择热塑性树脂与结合剂的其它材料相容(即,形成一个相的组合物)。在至少一些实施例中,热塑性树脂具有在9至13(cal/cm3)1/2范围内或在9.5至12(cal/cm3)1/2范围内的溶解性参数。合适的热塑性树脂的实例包括聚丙烯酸、苯乙烯-丙烯酸类聚合物和树脂、聚乙烯醇缩丁醛等。
可以添加常规的涂布助剂,例如表面活性剂和分散剂,以促进涂布工艺。可以利用本领域中公知的各种涂布方法将LTHC层涂布到施主基板上。至少在一些情况下,可以将聚合的或有机的LTHC层涂布到0.05至20微米、0.5至15微米、1至10微米、或1至7微米的厚度。在至少一些情况下,可以将无机的LTHC层涂布到0.0005至10微米、0.001至10微米、或0.001至1微米的厚度。
在图5中,可以将任选的夹层216设置在LTHC层214和第一转移层218之间。例如,可以使用夹层来最小化转移层的转移部分的损伤和污染,并且还可以降低转移层的转移部分的扭曲。该夹层还会影响转移层与施主薄片其余部分的粘接性。典型的,夹层具有高的热阻。优选,夹层在成像条件下不会扭曲或化学分解,尤其是不会到表现出转移图像失效的程度。在转移工艺期间典型地该夹层保持与LTHC层接触并且基本不与转移层一起转移。
合适的夹层包括例如聚合物膜、金属层(例如,气相淀积的金属层)、无机层(例如,无机氧化物例如氧化物、氧化钛和其它金属氧化物的溶胶-凝胶淀积层和气相淀积层)、和有机/无机复合层。作为夹层材料的合适的有机材料包括热固和热塑性材料。合适的热固性材料包括通过加热、辐射或化学处理交联的树脂,包括但不限于,交联的或可交联的聚丙烯酸酯、聚甲基丙烯酸酯、聚酯、环氧树脂和聚氨酯。热固性材料可以涂布到LTHC层上作为例如热固性前体,并且随后交联以形成交联夹层。
用于夹层的合适的热塑性材料例如包括聚丙烯酸酯、聚甲基丙烯酸酯、聚苯乙烯、聚氨酯、聚砜、聚酯、聚酰亚胺。可以经由常规的涂布技术(例如,溶剂涂布、喷涂或挤压涂布)应用这些热塑性有机材料。典型的,适合用于夹层的热塑性材料的玻璃转变温度(Tg)为至少25℃或更大、至少30℃、至少40℃或至少50℃。在一些实施例中,夹层包括具有比成像期间在转移层中获得的任意温度大的Tg的热塑性材料。在成像辐射波长,夹层可以是透射性的、吸收性的、反射性的或其某种组合。
适合作为夹层材料的无机材料例如包括金属、金属氧化物、金属硫化物、和无机碳涂层,包括在成像光波长上高透射性或反射性的那些材料。这些材料可以经由常规技术(例如,真空溅射、真空蒸发或等离子体喷射淀积)应用到光热转换层。
如果希望的话,夹层可以提供多种优点。夹层可以是对材料从光热转换层的转移的阻挡层。它还可以调节转移层中获得的温度,以便可以转移热不稳定的材料。例如,夹层可以用作热扩散体,以相对于LTHC层中获得的温度控制夹层和转移层之间的界面的温度。这可以提高转移层的质量(即,表面粗糙度、边缘粗糙度等)。夹层的存在还会导致转移材料中提高的塑性记忆。
夹层可以包含添加剂,包括例如光敏引发剂、表面活性剂、颜料、增塑剂和涂布助剂。夹层的厚度可以取决于例如夹层的材料、LTHC层的材料和性质、转移层的材料和性质、成像辐射的波长、和施主薄片曝露到成像辐射的持续时间的因素。对于聚合物夹层,夹层的厚度典型在0.05至10微米的范围内。对于无机夹层(例如,金属或金属化合物夹层),夹层的厚度典型在0.005至10微米的范围内。
再次参考图5,在施主薄片200中包括热转移层218。转移层218可以包括单独或与其它材料组合设置在一层或多层中的任何合适的材料或多种材料。当施主元件暴露到直接加热或可以通过光热转换材料吸收并且转换成热的成像辐射时,转移层218能够通过任何合适的转移机制作为单元或部分选择性地转移。转移层可以从施主元件选择性地热转移到邻近定位的受主基板(例如,OLED的第一电极)。如果希望的话,则可以存在不只一个转移层以便利用单一施主薄片热转移多层结构。可选地等离子体蚀刻热转移层的露出表面,以促进转移层的转移部分与受主的粘接性。
热转移层中材料的热质量转移到受主的模式取决于以暴露出施主薄片而采用的选择加热的类型、辐射的类型(如果使用的话),可以包括在施主薄片结构中的可选的光热转换(LTHC)层的材料类型和性质、热转移层中的材料类型、施主薄片的整体构造、受主类型等。不希望被任何理论限制,热转移通常经由一个或多个机制出现,在选择性转移期间,取决于成像条件、施主构造等等,强调或不加以强调其一个或多个。
热转移的一个机理包括热熔融-粘贴转移,由此在热转移层和施主薄片的其余部分之间的界面局部加热可以降低热转移层在选择位置与施主薄片的粘接。热转移层的选择的部分可以比施主薄片更坚固地粘附到受主,以使当移除施主薄片时,热转移层的选择的部分保留在受主上。
热转移的另一机理包括烧蚀(ablative)转移,由此可以使用局部加热来部分热转移层烧蚀离施主薄片,由此使烧蚀材料引向受主。热转移的再一机理包括升华,由此分散在热转移层中的材料可以通过在施主薄片中产生的热量而升华。一部分升华材料会聚集在受主上。
可以使用各种辐射发射源来加热施主薄片。对于模拟技术(例如,通过掩摸曝光),可使用高功率光源(例如,氙闪光灯和激光)。对于数字成像技术,红外光、可见光和紫外光激光器尤其有用。合适的激光器包括例如高功率(≥100mW)的单模激光二极管、光纤耦合的激光二极管、和二极管泵固态激光器(例如,Nd:YAG和Nd:YLF)。激光曝光停留时间例如可以从几百分之一微秒到几十微秒以上广泛地变化,且激光影响例如可以在约0.01至约5J/cm2以上的范围内。基于施主薄片构造、热转移层材料、热质量转移的模式和其它这些因素,其它辐射源和条件可以是合适的。
当在大的基板区域上期望高的点布置精度时(例如,当图案化用于高信息量显示器的元件和其它这种应用时),激光器用作辐射源尤其有用。激光源还适合大的刚性基板(例如,1m×1m×1.1mm玻璃)和连续的或薄片的薄膜基板(例如,100微米厚的聚酰亚胺薄片)。
在成像期间,施主薄片可以被至于紧密接触受主,或者施主薄片可以与受主隔开一定距离。至少在一些情况下,可以使用压力或真空来使施主薄片密切接触受主。在一些情况下,掩模可以放置在施主薄片和受主之间。这种掩模可以在转移之后移除或保留在受主上。如果光热转换材料存在于施主中,则可以使用辐射源来以成影像的方式(例如,数字地或通过掩模的模拟曝光)加热LTHC层(或包含辐射吸收体的其它层),以进行成影像的转移或将转移层从施主薄片图案化到受主。
典型的,热转移层的被选择的部分转移到受主,而没有转移施主薄片其它层的大部分,例如可选的夹层、可选的LTHC层或二者。可选夹层的存在可以消除或减少材料从LTHC层到受主的转移或减少热转移层的转移部分的扭曲。优选,在成像的条件下,可选的夹层与LTHC层的粘接性大于夹层与热转移层的粘接性。夹层对于成像辐射可以是透射的、反射的或吸收的。夹层可以用于衰减或以其它方式控制透过施主传送的成像辐射的水平,或者管理施主中的温度,例如在成像期间减少基于热或辐射的对于转移层的损伤。可以存在多个夹层。
可以使用大的施主薄片,包括具有一米或以上的长和宽尺度的施主薄片。在操作中,可以对激光光栅化(rastered)或以其它方式移动过大的施主薄片,激光选择性地操作以根据所希望的图案照亮施主薄片的部分。可选地,激光可以是固定的,而施主薄片或受主基板在激光下移动。
在一些情况下,顺序使用两个或多个不同施主薄片,以在受主上形成单个OLED或多个OLED,这可能是其可以是必须的、希望的或便利的。例如,具有第一和第二电极之间的多层的OLED可以通过从不同的施主薄片转移多个分离的层或多个分立的叠层而形成。
例如,多层施主薄片可以包括第一热层和至少一个第二热层。第一热转移层可以包含发光材料,而第二热层可以包含电荷传输材料、电荷阻挡材料、电荷注入材料、缓冲材料或其组合。
还可以使用多个施主薄片在受主上的同一层中形成分离的部件。例如,可以使用三个不同的施主薄片,每个具有包含能够发出不同颜色(例如,红、绿和蓝)的发光材料的热转移层,来形成用于全色极化发光电子显示器的红、绿、蓝子像素OLED。也就是说,可以使用多个施主薄片来热转移不同的发光材料,例如在不同波长范围发光的发光材料(例如,第一发光材料可以在与第二发光材料不同波长范围内发光)。作为另一实例,可以经由从一个施主薄片的热转移,之后从一个或多个其它层选择热转移发光层,图案化导电或半导电聚合物,以在显示器中形成多个OLED。
可以转移分离的施主薄片的材料邻近受主上的其它材料,以形成相邻的OLED或同一OLED的不同部分。也就是说,在淀积第一热转移层和第二热转移层的区域中没有交叠。在一个实例中,可以使用多个施主薄片来在同一OLED的不同区域或对不同的OLED热转移多个发光层。
可选地,来自分离的施主薄片的材料可以通过热转移或一些其它方法(例如,光刻、通过遮光掩模的淀积等),直接转移在先前图案化到受主上的其它层或材料的顶部上,或部分与其上叠置。例如,在淀积第一热转移层和第二热转移层的区域中,可以至少存在一些交叠。可以使用一个施主薄片来热转移发光材料,可以使用第二施主薄片来热转移电荷传输材料、电荷阻挡材料、电荷注入材料、缓冲材料或其组合。从第一施主薄片转移的材料可以在同一OLED的同一区域中。
图6是使用两个氧化锌像素薄膜晶体管的单一发光单元的电路80的示范性实例。第一电压源82周期性地提供使能脉冲,以选通(gate)氧化锌像素薄膜晶体管86。氧化锌像素薄膜晶体管86,一旦接通了,就基于来自第二电压源84的数据脉冲给电容器88和氧化锌像素薄膜晶体管90的栅极充电。对氧化锌像素薄膜晶体管90的栅极充电使氧化锌像素薄膜晶体管90切换到更导电的状态,由此使电流从电源电压94流过OLED 92以产生形成图像的光。提供使能脉冲的第一电压源82代表图9-11论述的行驱动电路的输出,而提供数据脉冲的第二电压源84代表以下结合图9-11论述的列驱动器电路的输出。
图7是基于图6所示结构的发光单元阵列的示范性电路图。为了说明的目的示出了四个单元,并且在该实例中每个单元有两个氧化锌薄膜晶体管。每个单元的一个氧化锌像素薄膜晶体管由来自基于氧化锌像素薄膜晶体管的行驱动器电路的输出95、98的使能脉冲驱动,而每个单元的每个OLED进一步由来自基于氧化锌薄膜晶体管的列驱动器电路的输出97、99的数据脉冲驱动,以从电压源86将功率提供给每个OLED。因此,作为通过行和列驱动器输出激活各个的OLED而解码的结果,OLED的阵列产生图像。
图8是示出一个可选发光单元设计的示范性电路图,该设计基于氧化锌像素薄膜晶体管并且减轻氧化锌薄膜晶体管参数变化的变化,不然该变化可能折衷OLED性能。图6和8的一般性的电路,除了氧化锌方面的晶体管外,在本领域中是公知的。具体地,示出了像图8一样的电路图并且由Yi He等人的IEEE Electron Device Letters、Vol.21(12),590-592(2000)所描述。
在图8的该电路中,氧化锌晶体管106和108用来自第一电压源102的信号接通。此时电流源104提供数据并迫使氧化锌晶体管114使来自电流源104电流穿过,同时以希望的电流电平将存储电容器110充电到驱动氧化锌晶体管114所需的电压电平。这时,如果电源118处于比氧化锌晶体管114的漏电极低的电压,电流将不会流过氧化锌晶体管112。该工艺调节可以随着时间出现的晶体管阈值电压偏移。流过氧化锌像素晶体管114的电流然后激活OLED 116发光。当来自电源102的选择信号断开时,氧化锌晶体管106和108断开,但只要存储电容器110保持充电,由电压源118供给的电流就继续流过氧化锌晶体管114和OLED 116。图8的单元也可以扩展来产生类似于图7所示的单元阵列。
图9是示出基于氧化锌薄膜晶体管的数字逻辑门的示范性电路图,该数字逻辑门可以用作以上结合图6-8论述的产生使能和数据脉冲的行和列驱动器电路的架构模块。图9的特定逻辑门是“或非”(NOR)门120的实例。然而,将意识到,可以利用由氧化锌薄膜晶体管形成的其它逻辑门来作为行和列驱动器电路的架构模块,例如OR、AND、“与非”(NAND)和“异或”(XOR)逻辑门。在该实例中,第一氧化锌薄膜晶体管124接收来自电压源122的电能。薄膜晶体管124保持在导电状态,并且从薄膜晶体管124的源极引出输出125。然而,输出125还连接至氧化锌薄膜晶体管126和氧化锌薄膜晶体管130的漏极。如果在薄膜晶体管126的栅极128或薄膜晶体管130的栅极132提供逻辑高,则输出125被拉到逻辑低。
在本发明的实施例中,通过在与基于氧化锌的像素薄膜晶体管和OLED一起在示出的电结构的显示器基板上图案化的基于氧化锌的薄膜晶体管124、126、130,形成这些逻辑门120。可以通过前述的基于孔径掩模的图案化或基于光刻的图案化的工艺,将逻辑门的氧化锌薄膜晶体管与显示器的显示器基板上的基于氧化锌的像素薄膜晶体管单片集成。形成行和列驱动器电路的基于氧化锌的逻辑门电连接的图案化,参考以下论述的图10和11将是显而易见的。
图10示出了标准触发器134,但该触发器是通过由如图9所示的基于氧化锌的薄膜晶体管形成的一组互连的NOR门120形成的,该基于氧化锌的薄膜晶体管与显示器的显示器基板上的氧化锌像素薄膜晶体管单片集成。提供了时钟输入136,就像数据输入138一样。触发器134提供了输出140和反相输出142。将意识到,当构造行和列驱动器电路时,可以利用除触发器外的其它逻辑器件。
图11示出了由如图10所示的级联触发器134形成的标准移位寄存器144,它们是由包括在显示器基板上图案化的氧化锌基薄膜晶体管的逻辑门构造的。从产生显示数据的器件的视频数据总线串行地提供时钟136和数据信号138。在该实例中,移位寄存器144串行地接收用于像素阵列的列的数据信号,但必须通过将串行数据转换成并行数据去复用该串行数据。如与顺序相对的,并行数据允许每个像素同时接收它的控制位或多个控制位。时钟信号136使通过级联触发器的数据信号传播同步,直到从输出140提供的数据信号对应于显示器的正确列。
在传播期间,行驱动器电路,其也可以是逻辑器件例如一组移位寄存器,其对于每行线保持逻辑低输出,直到像素数据信号定位在列移位寄存器144的合适的列输出140。由于行驱动器电路的最后的逻辑高输出,该时序基于时钟脉冲的数量。这防止选通晶体管(例如图6的晶体管86)将错误的数据信号传到直接连接OLED的像素晶体管的栅极。一旦数据信号与各列正确对准,行驱动器电路就提供逻辑高输出,以使氧化锌像素薄膜晶体管选通每个输出140变得导电。这样做时,将用于每列的数据信号传送到直接连接OLED的氧化锌薄膜晶体管的栅极,由此根据数据信号的值使OLED发光或不发光。
虽然图9至11提供了行和列电路的一个实例,但将意识到,可以存在由在显示器基板上图案化的氧化锌基薄膜晶体管构造的行和列电路的许多变形。因此,仅提供图9至11来示出这种行和列电路的一个实例。
实例
除非另有说明,所有份都是按重量计算的份,且所有比例和百分比都是以重量计的。为了简明起见,在实例中使用各种缩写词并且具有给定的意义,和/或描述如以下表中提到的可商业获得的材料。
缩写 | 描述/商业来源 |
FTCNQ | 2,3,5,6-四氟-7,7,8,8-四氰基二喹啉并二甲烷,可从Lancaster Chemicals获得,其是Alfa Aesar,Ward Hill,MA的子公司 |
1-TANTA | 4,4,4”-三(N-(2-萘基)-N-苯氨基)-t三苯胺,可从H.W.Sands Corp.,Jupiter,FL或者,产品编号OSA2290 |
BAlq | 双(2-甲基-8-喹啉合)-4-(苯基-苯酚合)-铝-(III),升华的,可从Eastman Kodak Company,Rochester,NY获得 |
Irgacure 369 | 2-苄基-2-(二甲氨基)-1-(4-(吗啉基)苯基)丁酮可从Ciba Specialty Chemicals Corporation,Tarrytown,NY获得,为Irgacure369 |
Irgacure 184 | 1-羟基环己基苯基酮,可从Ciba Specialty Chemicals Corporation,Tarrytown,NY获得,为Irgacure 184 |
M7Q film | 0.1mm厚的表面处理的聚对苯二甲酸乙二醇酯,可从Teijin,Osaka,Japan获得,为M7Q |
Silver | 银点,从Aldrich Chemical,Milwaukee,WI,为20,436-6 |
SR 351HP | 三羟甲基丙烷三丙烯酸酯,可从Sartomer,Exton,PA获得,为SR 351HP |
LTHC | 光热转换 |
Raven 760Ultra | 碳黑颜料,可从Columbian Chemical Co.,Atlanta,GA获得,为760 Ultra |
Butvar B-98 | 聚乙烯醇缩丁醛树脂,可从Solutia Inc.,St.Louis,MO获得,为Butvar B-98 |
Joncryl 67 | 丙烯酸树脂,可从S.C.Johnson&Sons,Racine,WI获得,为Joncryl 67 |
Disperbyk 161 | 一种分散剂,可从Byk-Chemie,USA,Wallingford,CT获得,为Disperbyk 161 |
Aluminum | Puratronic铝点,99.999重量百分比,可从Alfa Aesar,Ward Hill,MA获得 |
Ebecryl 629 | 环氧酚醛丙烯酸酯,可从UCB Radcure Inc.,N.Augusta,SC获得,为Ebecryl 629 |
Ellvacite 2669 | 一种丙烯酸树脂,可从ICI Acrylics Inc.,Memphis,TN获得,为Ellvacite 2669 |
NPB | N,N’-双(萘-1-基)-N,N’-双(苯基)联苯胺,可从H.W.Sands Corp.,Jupiter,FL获得,产品编号为ELD-7534 |
C545T | 10-(2-苯并噻唑基)-1,1,7,7-四甲基-2,3,6,7-四氢-1H,5H,11H-[1]-苯并吡喃并(6,7,8-ij)喹嗪-11-酮,可从H.W.Sands,Corp.,Jupiter,FL获得,为产品OPB5545 |
PtOEP | 2,3,7,8,12,13,17,18-八乙基-21H,23H-卟吩铂(II),可从H.W.Sands,Corp.,Jupiter,FL获得,为产品编号OPA6299 |
Alq3 | 三(8-羟基喹啉合)铝,在升华的,可从H.W.Sands,Corp.,Jupiter,FL获得,为产品编号ORA4487 |
LiF | 氟化锂,99.85重量百分比,可从Alfa Aesar,Ward Hill,MA获得,产品编号36359 |
未在前述表中标识的材料可从Aldrich Chemical Company,Milwaukee,WI获得。
实例1
利用光刻制备ZnO有源矩阵显示器的步骤
利用酒精冲洗清洗2英寸×2英寸的玻璃载片。将载片在120℃预烘焙60秒以提高光致抗蚀剂(PR)粘接性。通过旋涂(5000 RPM旋转60秒,之后在150℃软烘焙60秒)将负性光致抗蚀剂(FUTURREXNR7-1000PY,可从Futurrex Inc.Franklin,NJ获得)应用到载片。将光致抗蚀剂暴露到具有180mJ/cm2的栅极水平光刻掩模,并然后在100℃曝光后烘焙60秒。利用FUTURREX RD6显影剂显影具有曝光的光致抗蚀剂的载片约10秒。然后用水冲洗显影了的载片,用氮干燥并检查。随后,将50的钛、600的金和20的钛蒸发到载片上。利用电子束蒸发钛并热蒸发金。通过在丙酮和甲醇中的金属抬离(lift-off)、水冲洗,完成栅极金属层的图案化。
然后利用射频(rf)溅射淀积栅极介质。溅射500连续的SiO2层(700W/8英寸SiO2靶/0.1mTorr氧和1.9mTorr氩)。接下来,溅射500连续的ZnO层(100W/6英寸SiO2靶/15mTorr氩)。如下光刻地图案化ZnO。通过以5000 RPM旋涂60秒将正性光致抗蚀剂(FUTURREXPR1-1000A)应用到基板,之后在120℃软烘焙120秒。通过半导体水平光刻掩模以120mJ/cm2曝光该抗蚀剂。通过曝光到FUTURREX RD6显影剂显影该抗蚀剂40秒。然后用水冲洗该样品,用氮干燥并检查。然后在0.5重量百分比的盐酸中蚀刻该基板7秒并且移除该光致抗蚀剂。
如下蚀刻SiO2。在120℃预烘焙蚀刻了ZnO的基板60秒。通过以5000RPM旋涂60秒将正性光致抗蚀剂(FUTURREX PR1-1000A)应用到预烘焙的基板,之后在120℃软烘焙120秒。以120mJ/cm2通过栅极介质水平光刻掩模曝光该抗蚀剂,利用FUTURREX RD6显影剂显影,用水冲洗,用氮干燥且然后检查。然后在120℃硬烘焙该基板120秒。用PADETCH 4(可从Ashland Specialty Chemicals,Dublin,OH获得)蚀刻该样品35秒,之后移除该光致抗蚀剂。
如下通过光刻图案化源和漏电极。在120℃预烘焙蚀刻的氧化物基板60秒。通过以5000 RPM旋涂60秒应用一层负性光致抗蚀剂(FUTURREX NR7-1000PY),之后在150℃软烘焙60秒。以180mJ/cm2通过源/漏光刻掩模曝光该光致抗蚀剂,在100℃后烘焙60秒,利用FUTURREX RD6显影10秒,用水冲洗,在氮中干燥,然后检查。最后在基板的顶部上顺序淀积Ca(60)/Au(600)/Ag(500)。源/漏金属层的图案化是通过在丙酮中之后在甲醇中抬离淀积的金属、水冲洗和氮吹干来完成的。该电极用作OLED的第一电极。
如下应用该密封剂。负性的环氧型光致抗蚀剂(SU-8-2000.2,可由MicroChem,Newton,MA获得)通过0.45微米过滤器过滤,且然后通过以5000 RPM旋涂60秒应用到集成的TFT基板,之后在100℃软烘焙2分钟。以54mJ/cm2光照通过光掩模曝光该样品,之后在100℃后曝光烘焙2分钟。在SU-8 DEVELOPER(MicroChem)中显影该样品10秒,之后用异丙醇冲洗并且在氮中干燥。然后检查该样品并且在150℃硬烘焙2分钟。在这一点完成集成的TFT电路并且制备好OLED部件。
制备施主元件
如下制备施主元件。通过混合3.55份的Raven 760 Ultra、0.63份的Butvar B-98、1.90份的Joncryl 67、0.32份的Disperbyk 161、12.09份的Ebecryl 629、8.06份的Elvacite 2669、0.82份Irgacure 369、0.12份Irgacure184、45.31份2-丁酮和27.19份1,2-丙二醇单甲醚醋酸酯来制备LTHC溶液。利用Yasui Seiki Lab Coater,Model CAG-150(可由Yasui Seiki USA,Bloomington,IN获得),其配备有每英寸具有150个螺旋单元的微凹版辊筒(microgravure roll),将该溶液涂布到M7Q膜上。LTHC层在80℃在线干燥并且通过Fusion UV System Inc.600 Watt D bulb以百分之100的能量输出(UVA 320至390nm)提供的UV辐射下以6.1m/min的曝光速度固化。
通过混合14.85份的SR 351 HP、0.93份的Butvar B-98、2.78份的Joncryl 67、1.25份的Irgacure 369、0.19份的Irgacure 184、48份的2-丁酮和32份的1-甲氧基-2-丙醇来制备夹层溶液。利用Yasui Seiki lab coater,Model CAG-150,其配备有每直线英寸具有180个螺旋状单元的微凹版辊筒,通过转轮凹版法将该溶液涂布到固化的LTHC层上。该夹层在60℃在线干燥,并且通过使涂布的层以6.1m/min在以百分之60能量输出(UVA 320至390nm)的Fusion UV systems Inc.600 Watt D bulb下通过而提供的UV辐射下固化。
制备有机电致发光器件
利用激光感应热成像,以成影像的方式使发绿光材料层从施主元件热转移到涂布了缓冲层的基板,以形成绿光子像素。在具有三角抖动(dither)图案和400 KHz的频率的单向扫描中,在成像面以1至8瓦的功率使用一个激光器。要求的线宽是100至120微米,并且剂量为0.5-0.9J/cm2。在移除第一施主元件并将它放置在具有包含发红光材料的第二施主元件的显示器上之后,重复该热转移工艺以形成红光子像素。通过在整个发光区域上真空淀积200的BAlq和100的Alq3来形成蓝光子像素和空穴阻挡/电子传输层。
实例2
利用遮光掩模淀积制备ZnO有源矩阵显示器
通过用酒精冲洗清洗2英寸×2英寸的玻璃载片。如在申请人的美国专利申请公布2003/0152691和2003/0150384中在前所描述的,形成聚合的遮光掩模。利用激光烧蚀在遮光掩模中形成孔径。
如下淀积栅极介质。将用于栅极介质图案的具有孔径的遮光掩模对准并对齐基板上的栅极水平淀积图案。在真空室中通过遮光掩模淀积1600 SiO2。通过在4mTorr下在20sccm氧和120sccm氩中以450W用Si靶溅射淀积SiO2。从真空系统移除基板和遮光掩模并且用氮吹干清洗基板。
如下淀积ZnO半导体。将用于半导体图案的具有孔径的遮光掩模对准并对齐基板上的栅极介质和栅极水平淀积图案。在真空室中淀积500 ZnO(100W,在15mTorr以0.4sccm在Ar流中10个重量百分比的O2)。从真空系统移除基板和遮光掩模并且用氮吹干清洗基板。
在集成的TFT的顶部上淀积密封剂,以使OLED层与TFT和集成电路的层分离。通过密封剂遮光掩模与在前图案化的层对准淀积密封剂。使用电子束蒸发的Al2O3作为密封剂。通过真空淀积将其淀积到3000的厚度。
制备施主元件
如下制备施主元件。通过混合3.55份的Raven 760 Ultra、0.63份的Butvar B-98、1.90份的Joncryl 67、0.32份的Disperbyk 161、12.09份的Ebecryl 629、8.06份的Elvacite 2669、0.82份Irgacure 369、0.12份Irgacure184、45.31份2-丁酮和27.19份1,2-丙二醇单甲醚醋酸酯来制备LTHC溶液。利用Yasui Seiki Lab Coater,Model CAG-150(可由Yasui Seiki USA,Bloomington,IN获得),其配备有每英寸具有150个螺旋单元的微凹版辊筒,将该溶液涂布到M7Q膜上。LTHC层在80℃在线干燥并且以6.1m/min的曝光速度在通过以百分之100的能量输出(UVA 320至390nm)的Fusion UV System Inc.600 Watt D bulb提供的UV辐射下固化。
通过混合14.85份的SR 351HP、0.93份的Butvar B-98、2.78份的Joncryl 67、1.25份的Irgacure 369、0.19份的Irgacure 184、48份的2-丁酮和32份的1-甲氧基-2-丙醇来制备夹层溶液。利用Yasui Seiki lab coater,Model CAG-150,其配备有每直线英寸具有180个螺旋状单元的微凹版辊筒,通过转轮凹版法将该溶液涂布到固化的LTHC层上。该夹层在60℃在线干燥,并且在通过使涂布的层以6.1m/min在以百分之60的能量输出(UVA 320至390 nm)的Fusion UV systems Inc.600 Watt D bulb下穿过而提供的UV辐射下固化。
对于绿光OLED的图案化,将掺杂有1个重量百分比的C545T的具有500的Alq3(1/sec)的层真空淀积到夹层上。
有机电致发光器件的制备
利用激光感应热成像,以成影像的方式使发绿光材料层从施主元件热转移到涂布了缓冲层的基板,以形成绿光子像素。在具有三角抖动图案和400KHz的频率的单向扫描中,在成像面以1至8瓦特的功率使用一个激光。要求的线宽是100至120微米,并且剂量为0.5-0.9J/cm2。在移除第一施主元件并将它放置在具有包含发红光材料的第二施主元件的显示器上之后,重复该热转移工艺以形成红光子像素。通过在整个发光区域上真空淀积200的BAlq和100的Alq3来形成蓝光子像素和空穴阻挡/电子传输层。
Claims (21)
1.一种显示器的制备方法,该方法包括:
在显示器基板上图案化一组氧化锌沟道薄膜晶体管行和列驱动器;
在该显示器基板上图案化一组氧化锌沟道像素薄膜晶体管,该像素薄膜晶体管与薄膜晶体管行和列驱动器电连接,
其中所述行和列驱动器以及像素晶体管被单片集成到所述显示器基板上;和
在该显示器基板上形成一组有机发光二极管,每个有机发光二极管包括第一电极、第二电极和位于第一电极和第二电极之间的发光材料,其中形成至少一个有机发光二极管包括:
提供与至少一个像素薄膜晶体管电连接的第一电极;
制备第一施主薄片,该第一施主薄片包括第一施主基板和包括第一发光材料的第一热转移层;
从第一施主薄片转移第一热转移层,其中第一热转移层被转移邻近于第一电极;和
淀积第二电极,其中第一热转移层位于第一电极和第二电极之间。
2.根据权利要求1的方法,其中施主薄片进一步包括位于施主基板和第一热转移层之间的光热转换层。
3.根据权利要求2的方法,其中转移第一热转移层包括用辐射源加热该施主薄片。
4.根据权利要求2的方法,其中施主薄片进一步包括设置在光热转换层和第一热转移层之间的夹层。
5.根据权利要求1的方法,其中有机发光二极管的第一电极与至少一个像素薄膜晶体管的源或漏电极电连接。
6.根据权利要求1的方法,进一步包括:在与显示器基板相对的第一电极的表面上淀积缓冲层,其中第一电极和缓冲层两者都位于显示器基板和第一热转移层之间。
7.根据权利要求6的方法,进一步包括:在缓冲层上淀积电荷传输层、电荷阻挡层、电荷注入层或其组合。
8.根据权利要求1的方法,其中施主薄片进一步包括第二热转移层,该第二热转移层包括电荷传输材料、电荷注入材料、电荷阻挡材料、缓冲材料或其组合,且其中第二热转移层与第一热转移层一起转移。
9.根据权利要求1的方法,进一步包括:
制备包括第二施主基板和第二热转移层的第二施主薄片;
从第二施主薄片转移第二热转移层,其中第二热转移层位于第一电极和第二电极之间。
10.根据权利要求9的方法,其中第二热转移层包括电荷传输材料、电荷阻挡材料、电荷注入材料、缓冲材料或其组合。
11.根据权利要求9的方法,其中转移第一热转移层包括对第一和第二电极之间的第一区域的第一转移,而转移第二热转移层包括对第一和第二电极之间的第二区域的第二转移,其中第一区域与第二区域不交叠。
12.根据权利要求11的方法,其中第二热转移层包括第二发光材料,其发出不同于第一发光材料的波长范围的光。
13.根据权利要求9的方法,其中转移第一热转移层包括对第一和第二电极之间的第一区域的第一转移,而转移第二热转移层包括对第一和第二电极之间的第二区域的第二转移,其中第一区域与第二区域交叠。
14.根据权利要求13的方法,其中第二热转移层包括电荷传输材料、电荷阻挡材料、电荷注入材料、缓冲材料或其组合。
15.根据权利要求1的方法,其中在显示器基板上图案化该组氧化锌沟道薄膜晶体管行和列驱动器和图案化该组氧化锌沟道像素薄膜晶体管包括通过光刻形成。
16.根据权利要求1的方法,其中在显示器基板上图案化该组氧化锌沟道薄膜晶体管行和列驱动器和图案化该组氧化锌沟道像素薄膜晶体管包括利用聚合的孔径掩模。
17.根据权利要求1的方法,进一步包括:在行和列驱动器和像素薄膜晶体管上图案化密封层。
18.根据权利要求1的方法,进一步包括在第一和第二电极之间淀积第二层,该第二层包括电荷传输材料、电荷阻挡材料、电荷注入材料、缓冲材料或其组合。
19.根据权利要求18的方法,其中第二层利用聚合的孔径掩模而图案化。
20.根据权利要求1的方法,其中第一电极是透明的。
21.根据权利要求1的方法,其中第二电极是透明的。
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- 2006-03-27 CN CN2006800110096A patent/CN101156244B/zh not_active Expired - Fee Related
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CN101156244A (zh) | 2008-04-02 |
US20060228974A1 (en) | 2006-10-12 |
TW200644313A (en) | 2006-12-16 |
JP2008537631A (ja) | 2008-09-18 |
KR101202515B1 (ko) | 2012-11-16 |
KR20070116053A (ko) | 2007-12-06 |
EP1866966A1 (en) | 2007-12-19 |
US7645478B2 (en) | 2010-01-12 |
WO2006105028A1 (en) | 2006-10-05 |
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