SG10201408329SA - Memory device, semiconductor device, and electronic device - Google Patents

Memory device, semiconductor device, and electronic device

Info

Publication number
SG10201408329SA
SG10201408329SA SG10201408329SA SG10201408329SA SG10201408329SA SG 10201408329S A SG10201408329S A SG 10201408329SA SG 10201408329S A SG10201408329S A SG 10201408329SA SG 10201408329S A SG10201408329S A SG 10201408329SA SG 10201408329S A SG10201408329S A SG 10201408329SA
Authority
SG
Singapore
Prior art keywords
device
memory
semiconductor
electronic
electronic device
Prior art date
Application number
SG10201408329SA
Inventor
Jun Koyama
Shunpei Yamazaki
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2009293982 priority Critical
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG10201408329SA publication Critical patent/SG10201408329SA/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 – G06F13/00 and G06F21/00
    • G06F1/16Constructional details or arrangements
    • G06F1/20Cooling means
    • G06F1/206Cooling means comprising thermal management
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/112Read-only memory structures [ROM] and multistep manufacturing processes therefor
    • H01L27/115Electrically programmable read-only memories; Multistep manufacturing processes therefor
    • H01L27/11517Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/0948Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02Sample-and-hold arrangements
    • G11C27/024Sample-and-hold arrangements using a capacitive memory element
SG10201408329SA 2009-12-25 2010-12-17 Memory device, semiconductor device, and electronic device SG10201408329SA (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009293982 2009-12-25

Publications (1)

Publication Number Publication Date
SG10201408329SA true SG10201408329SA (en) 2015-02-27

Family

ID=44186321

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201408329SA SG10201408329SA (en) 2009-12-25 2010-12-17 Memory device, semiconductor device, and electronic device

Country Status (9)

Country Link
US (4) US8362538B2 (en)
EP (1) EP2517355B1 (en)
JP (5) JP5727780B2 (en)
KR (3) KR101874779B1 (en)
CN (2) CN105590646B (en)
MY (1) MY158782A (en)
SG (1) SG10201408329SA (en)
TW (3) TWI620181B (en)
WO (1) WO2011078373A1 (en)

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180133548A (en) 2009-11-20 2018-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011070905A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
WO2011074408A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Non-volatile latch circuit and logic circuit, and semiconductor device using the same
WO2011081011A1 (en) * 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
CN102804603B (en) 2010-01-20 2015-07-15 株式会社半导体能源研究所 Signal processing circuit and method for driving the same
KR101805378B1 (en) 2010-01-24 2017-12-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and manufacturing method thereof
DE112011100841T5 (en) 2010-03-08 2013-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the semiconductor device
US8207025B2 (en) 2010-04-09 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5739257B2 (en) 2010-08-05 2015-06-24 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP5827520B2 (en) * 2010-09-13 2015-12-02 株式会社半導体エネルギー研究所 Semiconductor memory device
US8829512B2 (en) 2010-12-28 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6030298B2 (en) * 2010-12-28 2016-11-24 株式会社半導体エネルギー研究所 Buffer storage device and signal processing circuit
WO2012090799A1 (en) * 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI525614B (en) 2011-01-05 2016-03-11 Semiconductor Energy Lab A storage element, the storage means, and a signal processing circuit
JP5859839B2 (en) 2011-01-14 2016-02-16 株式会社半導体エネルギー研究所 Storage element driving method and storage element
TWI525619B (en) 2011-01-27 2016-03-11 Semiconductor Energy Lab Memory circuit
JP5827145B2 (en) 2011-03-08 2015-12-02 株式会社半導体エネルギー研究所 Signal processing circuit
JP5839474B2 (en) 2011-03-24 2016-01-06 株式会社半導体エネルギー研究所 Signal processing circuit
TWI567735B (en) * 2011-03-31 2017-01-21 半導體能源研究所股份有限公司 Memory circuit, the memory unit, and a signal processing circuit
TWI525615B (en) 2011-04-29 2016-03-11 Semiconductor Energy Lab The semiconductor storage means
EP2705404A1 (en) * 2011-05-02 2014-03-12 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Surface plasmon device
JP5886128B2 (en) 2011-05-13 2016-03-16 株式会社半導体エネルギー研究所 Semiconductor device
US8837203B2 (en) 2011-05-19 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6002433B2 (en) 2011-05-19 2016-10-05 株式会社半導体エネルギー研究所 Arithmetic circuit and driving method of arithmetic circuit
US9467047B2 (en) * 2011-05-31 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, power source circuit, and semiconductor device
US8804405B2 (en) 2011-06-16 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
JP6013685B2 (en) 2011-07-22 2016-10-25 株式会社半導体エネルギー研究所 Semiconductor device
US8736315B2 (en) 2011-09-30 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101976212B1 (en) * 2011-10-24 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
TWI591611B (en) * 2011-11-30 2017-07-11 Semiconductor Energy Lab The semiconductor display device
TWI621185B (en) * 2011-12-01 2018-04-11 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
JP6099372B2 (en) 2011-12-05 2017-03-22 株式会社半導体エネルギー研究所 Semiconductor device and electronic equipment
KR20150028760A (en) * 2011-12-15 2015-03-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
JP6125850B2 (en) * 2012-02-09 2017-05-10 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
US8817516B2 (en) * 2012-02-17 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Memory circuit and semiconductor device
JP2014063557A (en) 2012-02-24 2014-04-10 Semiconductor Energy Lab Co Ltd Storage element and semiconductor element
US9176571B2 (en) 2012-03-02 2015-11-03 Semiconductor Energy Laboratories Co., Ltd. Microprocessor and method for driving microprocessor
JP6041707B2 (en) * 2012-03-05 2016-12-14 株式会社半導体エネルギー研究所 Latch circuit and semiconductor device
US9058892B2 (en) * 2012-03-14 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and shift register
JP6227890B2 (en) * 2012-05-02 2017-11-08 株式会社半導体エネルギー研究所 Signal processing circuit and control circuit
US9001549B2 (en) * 2012-05-11 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5917285B2 (en) * 2012-05-11 2016-05-11 株式会社半導体エネルギー研究所 Driving method of semiconductor device
KR20130126494A (en) * 2012-05-11 2013-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method of semiconductor device
US8929128B2 (en) * 2012-05-17 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Storage device and writing method of the same
US9571103B2 (en) * 2012-05-25 2017-02-14 Semiconductor Energy Laboratory Co., Ltd. Lookup table and programmable logic device including lookup table
KR20150023547A (en) * 2012-06-01 2015-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and alarm device
US9343120B2 (en) 2012-06-01 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. High speed processing unit with non-volatile register
US8873308B2 (en) 2012-06-29 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
US9083327B2 (en) * 2012-07-06 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
SG11201504939RA (en) * 2012-09-03 2015-07-30 Semiconductor Energy Lab Microcontroller
KR20150070167A (en) 2012-10-17 2015-06-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Microcontroller and method for manufacturing the same
WO2014073374A1 (en) 2012-11-06 2014-05-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US20140184484A1 (en) * 2012-12-28 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Display device
JP5807076B2 (en) 2013-01-24 2015-11-10 株式会社半導体エネルギー研究所 semiconductor device
KR20140101688A (en) 2013-02-12 2014-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP2014195243A (en) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2014195241A (en) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd Semiconductor device
JP6298662B2 (en) * 2013-03-14 2018-03-20 株式会社半導体エネルギー研究所 Semiconductor device
US9294075B2 (en) 2013-03-14 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014157019A1 (en) 2013-03-25 2014-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6316630B2 (en) 2013-03-26 2018-04-25 株式会社半導体エネルギー研究所 Semiconductor device
JP6329843B2 (en) 2013-08-19 2018-05-23 株式会社半導体エネルギー研究所 Semiconductor device
US9461126B2 (en) 2013-09-13 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Transistor, clocked inverter circuit, sequential circuit, and semiconductor device including sequential circuit
JP2015118724A (en) * 2013-11-13 2015-06-25 株式会社半導体エネルギー研究所 Semiconductor device and method for driving the semiconductor device
US9627413B2 (en) * 2013-12-12 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
CN103745955B (en) * 2014-01-03 2017-01-25 京东方科技集团股份有限公司 It means array substrate and manufacturing method thereof
US9300292B2 (en) 2014-01-10 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Circuit including transistor
US9721968B2 (en) * 2014-02-06 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic appliance
US9214508B2 (en) * 2014-02-24 2015-12-15 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
EP2911199A1 (en) 2014-02-24 2015-08-26 LG Display Co., Ltd. Thin film transistor substrate and display using the same
EP2911195A1 (en) 2014-02-24 2015-08-26 LG Display Co., Ltd. Thin film transistor substrate and display using the same
US10186528B2 (en) 2014-02-24 2019-01-22 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
US9881986B2 (en) 2014-02-24 2018-01-30 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
US10325937B2 (en) 2014-02-24 2019-06-18 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
KR20150102696A (en) 2014-02-28 2015-09-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, method for driving the same, and electronic appliance
JP6442321B2 (en) 2014-03-07 2018-12-19 株式会社半導体エネルギー研究所 Semiconductor device, driving method thereof, and electronic apparatus
TWI663733B (en) * 2014-06-18 2019-06-21 日商半導體能源研究所股份有限公司 Transistor and semiconductor device
KR20170067731A (en) 2014-10-10 2017-06-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Logic circuit, processing unit, electronic component, and electronic device
US10014325B2 (en) * 2016-03-10 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP6231603B2 (en) * 2016-04-04 2017-11-15 株式会社半導体エネルギー研究所 Semiconductor device
KR20170115640A (en) * 2016-04-07 2017-10-18 삼성디스플레이 주식회사 Transistor array panel, manufacturing method thereof, and disalay device including the same
CN106298956A (en) * 2016-09-08 2017-01-04 武汉华星光电技术有限公司 Preparation method for oxide thin film transistor
TW201812754A (en) 2016-09-09 2018-04-01 日商半導體能源硏究所股份有限公司 Storage device, method for operating storage device, semiconductor device, electronic component, and electronic device
KR20180055701A (en) 2016-11-17 2018-05-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method of manufacturing the same
TWI651848B (en) * 2016-12-13 2019-02-21 友達光電股份有限公司 The method of crystallization of the metal oxide semiconductor layer, the semiconductor structure, active array substrate, and indium gallium zinc oxide crystals

Family Cites Families (136)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (en) 1984-03-23 1985-10-08 Fujitsu Ltd Thin film transistor
JPS62274773A (en) * 1986-05-23 1987-11-28 Hitachi Ltd Semiconductor memory
JP2689416B2 (en) * 1986-08-18 1997-12-10 日本電気株式会社 Flip-flops
JPH0244256B2 (en) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244259B2 (en) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho
JPH0244258B2 (en) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (en) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (en) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (en) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH05110392A (en) * 1991-10-16 1993-04-30 Hitachi Ltd Integrated circuit provided with state latch circuit
JPH05251705A (en) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd Thin-film transistor
US5473571A (en) * 1993-09-30 1995-12-05 Nippon Telegraph And Telephone Corporation Data hold circuit
JP3479375B2 (en) 1995-03-27 2003-12-15 科学技術振興事業団 Nitrous metal oxide to form a thin film transistor and a pn junction by the metal oxide semiconductor of copper oxide such as a semiconductor device and a method for their preparation
JP4198201B2 (en) * 1995-06-02 2008-12-17 株式会社ルネサステクノロジ Semiconductor device
JPH098612A (en) 1995-06-16 1997-01-10 Nec Corp Latch circuit
DE69635107D1 (en) 1995-08-03 2005-09-29 Koninkl Philips Electronics Nv A semiconductor device with a transparent switching element
JP3625598B2 (en) * 1995-12-30 2005-03-02 三星電子株式会社 A method of manufacturing a liquid crystal display device
JP4170454B2 (en) 1998-07-24 2008-10-22 Hoya株式会社 Article and manufacturing method thereof having a transparent conductive oxide thin film
JP2000150861A (en) * 1998-11-16 2000-05-30 Hiroshi Kawazoe Oxide thin film
JP3276930B2 (en) * 1998-11-17 2002-04-22 科学技術振興事業団 Transistor and semiconductor device
TW460731B (en) * 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP4089858B2 (en) 2000-09-01 2008-05-28 国立大学法人東北大学 Semiconductor device
KR20020038482A (en) * 2000-11-15 2002-05-23 모리시타 요이찌 Thin film transistor array, method for producing the same, and display panel using the same
JP3997731B2 (en) * 2001-03-19 2007-10-24 富士ゼロックス株式会社 A method of forming a crystalline semiconductor thin film on a substrate
JP2002289859A (en) 2001-03-23 2002-10-04 Minolta Co Ltd Thin-film transistor
JP3925839B2 (en) 2001-09-10 2007-06-06 シャープ株式会社 The semiconductor memory device and its testing method
JP4090716B2 (en) * 2001-09-10 2008-05-28 シャープ株式会社 Thin film transistor and a matrix display device
EP1443130B1 (en) * 2001-11-05 2011-09-28 Japan Science and Technology Agency Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP3868293B2 (en) * 2001-12-28 2007-01-17 松下電器産業株式会社 The semiconductor integrated circuit
JP4083486B2 (en) * 2002-02-21 2008-04-30 裕道 太田 LnCuO (S, Se, Te) The method of producing single crystal thin film
CN1445821A (en) * 2002-03-15 2003-10-01 三洋电机株式会社 Forming method of ZnO film and ZnO semiconductor layer, semiconductor element and manufacturing method thereof
JP3933591B2 (en) * 2002-03-26 2007-06-20 三菱重工業株式会社 The organic electroluminescent element
JP4294256B2 (en) * 2002-03-28 2009-07-08 株式会社ルネサステクノロジ A semiconductor memory device
JP4278338B2 (en) 2002-04-01 2009-06-10 株式会社ルネサステクノロジ A semiconductor memory device
US7339187B2 (en) * 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (en) * 2002-06-13 2004-01-22 Murata Mfg Co Ltd Manufacturing method of semiconductor device and its manufacturing method
US7105868B2 (en) * 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
JP3986393B2 (en) * 2002-08-27 2007-10-03 富士通株式会社 Integrated circuit device having a nonvolatile data storage circuit
JP4736313B2 (en) * 2002-09-10 2011-07-27 日本電気株式会社 Thin film semiconductor device
JP4164562B2 (en) 2002-09-11 2008-10-15 Hoya株式会社 Transparent thin film field effect transistor using homologous film as an active layer
US7067843B2 (en) * 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
WO2004049346A1 (en) 2002-11-25 2004-06-10 Matsushita Electric Industrial Co., Ltd. Non-volatile memory cell and control method thereof
JP4166105B2 (en) 2003-03-06 2008-10-15 シャープ株式会社 Semiconductor device and manufacturing method thereof
JP2004273732A (en) 2003-03-07 2004-09-30 Masashi Kawasaki Active matrix substrate and its producing process
JP4108633B2 (en) 2003-06-20 2008-06-25 シャープ株式会社 Thin film transistor and its manufacturing method, and electronic device
US7262463B2 (en) * 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
JP2005079360A (en) * 2003-09-01 2005-03-24 Renesas Technology Corp The semiconductor integrated circuit
US7282782B2 (en) * 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7145174B2 (en) * 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7297977B2 (en) * 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
CN102354658B (en) 2004-03-12 2015-04-01 独立行政法人科学技术振兴机构 Method of manufacturing thin film transistor
US7211825B2 (en) * 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006050208A (en) * 2004-08-04 2006-02-16 Denso Corp Logic circuit corresponding to power source instantaneous interruption
JP2006100760A (en) * 2004-09-02 2006-04-13 Casio Comput Co Ltd Thin-film transistor and its manufacturing method
JP4553185B2 (en) 2004-09-15 2010-09-29 ルネサスエレクトロニクス株式会社 The semiconductor integrated circuit device
US7285501B2 (en) * 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) * 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7791072B2 (en) * 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7601984B2 (en) * 2004-11-10 2009-10-13 Canon Kabushiki Kaisha Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator
CN101057333B (en) * 2004-11-10 2011-11-16 佳能株式会社 Light emitting device
US7829444B2 (en) * 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7453065B2 (en) * 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
BRPI0517560B8 (en) * 2004-11-10 2018-12-11 Canon Kk field effect transistor
US7863611B2 (en) * 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7579224B2 (en) * 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI472037B (en) * 2005-01-28 2015-02-01 Semiconductor Energy Lab Semiconductor device, electronic device, and method of manufacturing semiconductor device
TWI390735B (en) * 2005-01-28 2013-03-21 Semiconductor Energy Lab Semiconductor device, electronic device, and method of manufacturing semiconductor device
US7858451B2 (en) * 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) * 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) * 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) * 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) * 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) * 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) * 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (en) * 2005-06-10 2006-12-21 Casio Comput Co Ltd Thin film transistor
US7691666B2 (en) * 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) * 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) * 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100702310B1 (en) * 2005-07-21 2007-03-30 주식회사 하이닉스반도체 Non-volatile latch circuit and system on chip with the same
KR100711890B1 (en) * 2005-07-28 2007-04-25 삼성에스디아이 주식회사 Organic Light Emitting Display and Fabrication Method for the same
JP2007059128A (en) * 2005-08-23 2007-03-08 Canon Inc Organic electroluminescent display device and manufacturing method thereof
JP2007073705A (en) * 2005-09-06 2007-03-22 Canon Inc Oxide-semiconductor channel film transistor and its method of manufacturing same
JP4560502B2 (en) 2005-09-06 2010-10-13 キヤノン株式会社 Field-effect transistor
JP5116225B2 (en) * 2005-09-06 2013-01-09 キヤノン株式会社 Manufacturing method of oxide semiconductor device
JP4850457B2 (en) * 2005-09-06 2012-01-11 キヤノン株式会社 Thin film transistor and thin film diode
JP4280736B2 (en) * 2005-09-06 2009-06-17 キヤノン株式会社 Semiconductor element
JP5064747B2 (en) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 Semiconductor device, electrophoretic display device, display module, electronic device, and method for manufacturing semiconductor device
EP1995787A3 (en) * 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method therof
JP5078246B2 (en) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
JP5037808B2 (en) * 2005-10-20 2012-10-03 キヤノン株式会社 Field effect transistor using amorphous oxide, and display device using the transistor
CN101707212B (en) * 2005-11-15 2012-07-11 株式会社半导体能源研究所 Semiconductor device and method of manufacturing the
TWI292281B (en) * 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) * 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (en) * 2006-01-21 2012-07-18 三星電子株式会社Samsung Electronics Co.,Ltd. ZnO film and method of manufacturing TFT using the same
US7576394B2 (en) * 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) * 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (en) * 2006-04-11 2007-10-17 삼성전자주식회사 Zno thin film transistor
US20070252928A1 (en) * 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (en) * 2006-06-13 2012-09-19 キヤノン株式会社 Oxide semiconductor film dry etching method
JP4609797B2 (en) * 2006-08-09 2011-01-12 Nec液晶テクノロジー株式会社 Thin film device and manufacturing method thereof
JP4999400B2 (en) * 2006-08-09 2012-08-15 キヤノン株式会社 Oxide semiconductor film dry etching method
JP4332545B2 (en) * 2006-09-15 2009-09-16 キヤノン株式会社 Field effect transistor and manufacturing method thereof
JP4274219B2 (en) * 2006-09-27 2009-06-03 セイコーエプソン株式会社 Electronic devices, organic electroluminescent devices, organic thin-film semiconductor device
JP5164357B2 (en) * 2006-09-27 2013-03-21 キヤノン株式会社 Semiconductor device and manufacturing method of semiconductor device
US7622371B2 (en) * 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7881693B2 (en) * 2006-10-17 2011-02-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI324856B (en) 2006-10-30 2010-05-11 Ind Tech Res Inst Dynamic floating input d flip-flop
US7772021B2 (en) * 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (en) * 2006-12-04 2008-06-19 Toppan Printing Co Ltd Color el display, and its manufacturing method
KR101303578B1 (en) * 2007-01-05 2013-09-09 삼성전자주식회사 Etching method of thin film
JP5508662B2 (en) * 2007-01-12 2014-06-04 株式会社半導体エネルギー研究所 Display device
US8207063B2 (en) * 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (en) * 2007-03-14 2008-08-07 삼성에스디아이 주식회사 Thin film transistor and organic light-emitting dislplay device having the thin film transistor
JP2008227344A (en) 2007-03-15 2008-09-25 Nec Electronics Corp Semiconductor device and its manufacturing method
US7795613B2 (en) * 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (en) * 2007-04-18 2013-11-05 삼성디스플레이 주식회사 Thin film transistor substrate and manufacturing method thereof
KR20080094300A (en) * 2007-04-19 2008-10-23 삼성전자주식회사 Thin film transistor and method of manufacturing the same and flat panel display comprising the same
KR101334181B1 (en) * 2007-04-20 2013-11-28 삼성전자주식회사 Thin Film Transistor having selectively crystallized channel layer and method of manufacturing the same
WO2008133345A1 (en) * 2007-04-25 2008-11-06 Canon Kabushiki Kaisha Oxynitride semiconductor
KR101345376B1 (en) * 2007-05-29 2013-12-24 삼성전자주식회사 Fabrication method of ZnO family Thin film transistor
CN101252018B (en) * 2007-09-03 2010-06-02 清华大学 Ferro-electricity programming information memory cell time sequence operation method using new type sequential operation
JP2009077060A (en) * 2007-09-19 2009-04-09 Sanyo Electric Co Ltd Clock control circuit and semiconductor integrated device mounted therewith
WO2009063542A1 (en) * 2007-11-12 2009-05-22 Fujitsu Microelectronics Limited Semiconductor device
JP5430846B2 (en) * 2007-12-03 2014-03-05 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US8202365B2 (en) * 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
WO2009081885A1 (en) 2007-12-25 2009-07-02 Idemitsu Kosan Co., Ltd. Oxide semiconductor field effect transistor and method for manufacturing the same
US7965540B2 (en) 2008-03-26 2011-06-21 International Business Machines Corporation Structure and method for improving storage latch susceptibility to single event upsets
US8551809B2 (en) 2008-05-01 2013-10-08 Intermolecular, Inc. Reduction of forming voltage in semiconductor devices
US8053364B2 (en) 2008-05-01 2011-11-08 Intermolecular, Inc. Closed-loop sputtering controlled to enhance electrical characteristics in deposited layer
US8129704B2 (en) 2008-05-01 2012-03-06 Intermolecular, Inc. Non-volatile resistive-switching memories
US8062918B2 (en) 2008-05-01 2011-11-22 Intermolecular, Inc. Surface treatment to improve resistive-switching characteristics
JP5305731B2 (en) * 2008-05-12 2013-10-02 キヤノン株式会社 Method for controlling threshold voltage of semiconductor device
JP4623179B2 (en) * 2008-09-18 2011-02-02 ソニー株式会社 Thin film transistor and a manufacturing method thereof
EP2172804B1 (en) * 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
JP5451280B2 (en) * 2008-10-09 2014-03-26 キヤノン株式会社 Wurtzite crystal growth substrate, manufacturing method thereof, and semiconductor device
WO2011070905A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same

Also Published As

Publication number Publication date
TWI620181B (en) 2018-04-01
CN105590646B (en) 2019-01-08
CN102656801A (en) 2012-09-05
KR20180077314A (en) 2018-07-06
TWI524346B (en) 2016-03-01
JP2015164088A (en) 2015-09-10
KR101874779B1 (en) 2018-07-06
US9941304B2 (en) 2018-04-10
JP5727780B2 (en) 2015-06-03
JP2011151796A (en) 2011-08-04
JP6021985B2 (en) 2016-11-09
KR20120127587A (en) 2012-11-22
EP2517355A4 (en) 2013-10-30
CN102656801B (en) 2016-04-27
JP2019134175A (en) 2019-08-08
US20130127497A1 (en) 2013-05-23
US9407269B2 (en) 2016-08-02
US20170033128A1 (en) 2017-02-02
US8618586B2 (en) 2013-12-31
TW201730886A (en) 2017-09-01
KR20190034696A (en) 2019-04-02
TW201611004A (en) 2016-03-16
WO2011078373A1 (en) 2011-06-30
US20140167037A1 (en) 2014-06-19
KR101971851B1 (en) 2019-04-25
JP2018078302A (en) 2018-05-17
MY158782A (en) 2016-11-15
EP2517355B1 (en) 2019-05-08
JP6258431B2 (en) 2018-01-10
US8362538B2 (en) 2013-01-29
TWI602180B (en) 2017-10-11
JP6506820B2 (en) 2019-04-24
JP2017016729A (en) 2017-01-19
US20110156024A1 (en) 2011-06-30
TW201135733A (en) 2011-10-16
EP2517355A1 (en) 2012-10-31
CN105590646A (en) 2016-05-18

Similar Documents

Publication Publication Date Title
TWI562112B (en) Semiconductor device
TWI369746B (en) Semiconductor device
GB2524419B (en) Electronic document reading devices
TWI420662B (en) Semiconductor device and method of manufacturing the same, and electronic apparatus
TWI396083B (en) Semiconductor storage device
TWI420633B (en) Integrated circuit devices and flip-chip assemblies
TWI380435B (en) Semiconductor memory device and method for manufacturing same
TWI562245B (en) Semiconductor device and method for manufacturing the same
TWI360242B (en) Memory device and memory
TWI343653B (en) Semiconductor device
TWI358986B (en) Electronic device
GB2464584B (en) Electronic device
TWI396283B (en) Semiconductor device
TWI395371B (en) Electronic device and antenna thereof
TWI389040B (en) Semiconductor memory card
TWI393248B (en) Nonvolatile semiconductor memory device
TWI363419B (en) Semiconductor memory device
TWI394516B (en) Portable electronic device
TWI400801B (en) Semiconductor device
TWI562381B (en) Semiconductor device
TWI419306B (en) Semiconductor device and cmos device and integrated circuit
TWI562242B (en) Semiconductor device and manufacturing method thereof
HK1128099A1 (en) Semiconductor device
TWI383501B (en) Semiconductor device and semiconductor device manufacturing method
TWI355883B (en) Portable electronic device