JP2008547195A - 亜鉛酸化物をベースとした半導体材料を含む薄膜トランジスタ - Google Patents
亜鉛酸化物をベースとした半導体材料を含む薄膜トランジスタ Download PDFInfo
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- JP2008547195A JP2008547195A JP2008516907A JP2008516907A JP2008547195A JP 2008547195 A JP2008547195 A JP 2008547195A JP 2008516907 A JP2008516907 A JP 2008516907A JP 2008516907 A JP2008516907 A JP 2008516907A JP 2008547195 A JP2008547195 A JP 2008547195A
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- Prior art keywords
- zinc oxide
- semiconductor
- coating
- semiconductor film
- substrate
- Prior art date
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 188
- 239000004065 semiconductor Substances 0.000 title claims abstract description 153
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 94
- 239000000463 material Substances 0.000 title claims abstract description 72
- 239000010409 thin film Substances 0.000 title claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims description 87
- 239000010408 film Substances 0.000 claims description 82
- 238000000576 coating method Methods 0.000 claims description 53
- 239000011248 coating agent Substances 0.000 claims description 51
- 239000002105 nanoparticle Substances 0.000 claims description 48
- 238000000151 deposition Methods 0.000 claims description 39
- 239000002243 precursor Substances 0.000 claims description 33
- 238000000137 annealing Methods 0.000 claims description 27
- 238000004528 spin coating Methods 0.000 claims description 21
- 230000005669 field effect Effects 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 150000001875 compounds Chemical class 0.000 claims description 14
- 239000011159 matrix material Substances 0.000 claims description 14
- 239000002131 composite material Substances 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- 239000002019 doping agent Substances 0.000 claims description 10
- 239000004973 liquid crystal related substance Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 6
- 238000007641 inkjet printing Methods 0.000 claims description 6
- 230000005693 optoelectronics Effects 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 claims description 5
- 239000011164 primary particle Substances 0.000 claims description 5
- 229920001940 conductive polymer Polymers 0.000 claims description 4
- 238000011068 loading method Methods 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000003618 dip coating Methods 0.000 claims description 3
- 239000012777 electrically insulating material Substances 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 238000005224 laser annealing Methods 0.000 claims description 3
- 230000004044 response Effects 0.000 claims description 3
- 239000000084 colloidal system Substances 0.000 claims description 2
- 238000007765 extrusion coating Methods 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical group [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000001659 ion-beam spectroscopy Methods 0.000 claims 1
- 239000012780 transparent material Substances 0.000 claims 1
- 235000014692 zinc oxide Nutrition 0.000 description 81
- 239000000243 solution Substances 0.000 description 52
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 36
- 230000037230 mobility Effects 0.000 description 20
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 17
- 239000004246 zinc acetate Substances 0.000 description 17
- 229910052782 aluminium Inorganic materials 0.000 description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- 230000008021 deposition Effects 0.000 description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 239000004020 conductor Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 238000000059 patterning Methods 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 239000004793 Polystyrene Substances 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 229920002223 polystyrene Polymers 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
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- 238000007740 vapor deposition Methods 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- -1 polyethylene terephthalate Polymers 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
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- 238000001755 magnetron sputter deposition Methods 0.000 description 4
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229920000144 PEDOT:PSS Polymers 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000007865 diluting Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- 229920002530 polyetherether ketone Polymers 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229940072919 cartia Drugs 0.000 description 2
- 238000005119 centrifugation Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000011151 fibre-reinforced plastic Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 2
- 150000004677 hydrates Chemical class 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 238000000813 microcontact printing Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000013557 residual solvent Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- MTLMVEWEYZFYTH-UHFFFAOYSA-N 1,3,5-trichloro-2-phenylbenzene Chemical compound ClC1=CC(Cl)=CC(Cl)=C1C1=CC=CC=C1 MTLMVEWEYZFYTH-UHFFFAOYSA-N 0.000 description 1
- OHVLMTFVQDZYHP-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CN1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O OHVLMTFVQDZYHP-UHFFFAOYSA-N 0.000 description 1
- IGGDKDTUCAWDAN-UHFFFAOYSA-N 1-vinylnaphthalene Chemical compound C1=CC=C2C(C=C)=CC=CC2=C1 IGGDKDTUCAWDAN-UHFFFAOYSA-N 0.000 description 1
- ZYZYQCACSQDPSB-UHFFFAOYSA-N 12,15-dioxatricyclo[8.6.0.02,7]hexadeca-1(10),2,4,6,8-pentaene-11,16-dione Chemical compound O=C1OCCOC(=O)C2=C1C=CC1=CC=CC=C21 ZYZYQCACSQDPSB-UHFFFAOYSA-N 0.000 description 1
- IHCCLXNEEPMSIO-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 IHCCLXNEEPMSIO-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- LLLVZDVNHNWSDS-UHFFFAOYSA-N 4-methylidene-3,5-dioxabicyclo[5.2.2]undeca-1(9),7,10-triene-2,6-dione Chemical compound C1(C2=CC=C(C(=O)OC(=C)O1)C=C2)=O LLLVZDVNHNWSDS-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- GBUDUCWUAWUSEV-UHFFFAOYSA-K [B+3].CC([O-])=O.CC([O-])=O.CC([O-])=O Chemical compound [B+3].CC([O-])=O.CC([O-])=O.CC([O-])=O GBUDUCWUAWUSEV-UHFFFAOYSA-K 0.000 description 1
- COXUNHIKBNZLLM-UHFFFAOYSA-H [B+3].[B+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O Chemical compound [B+3].[B+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O COXUNHIKBNZLLM-UHFFFAOYSA-H 0.000 description 1
- XWROSHJVVFETLV-UHFFFAOYSA-N [B+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O Chemical compound [B+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XWROSHJVVFETLV-UHFFFAOYSA-N 0.000 description 1
- HGBJDVIOLUMVIS-UHFFFAOYSA-N [Co]=O.[Na] Chemical compound [Co]=O.[Na] HGBJDVIOLUMVIS-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- HDYRYUINDGQKMC-UHFFFAOYSA-M acetyloxyaluminum;dihydrate Chemical compound O.O.CC(=O)O[Al] HDYRYUINDGQKMC-UHFFFAOYSA-M 0.000 description 1
- MJWPFSQVORELDX-UHFFFAOYSA-K aluminium formate Chemical compound [Al+3].[O-]C=O.[O-]C=O.[O-]C=O MJWPFSQVORELDX-UHFFFAOYSA-K 0.000 description 1
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 description 1
- 229940009827 aluminum acetate Drugs 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910021523 barium zirconate Inorganic materials 0.000 description 1
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
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- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical compound [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 description 1
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- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02469—Group 12/16 materials
- H01L21/02472—Oxides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
Abstract
Description
(a)亜鉛酸化物をベースとしていて一次粒子の平均サイズが5〜200nmであるナノ粒子のコロイド溶液を含む種コーティングを基板に付着させるステップと;
(b)その種コーティングを乾燥させて亜鉛酸化物をベースとしたナノ粒子からなる多孔層を形成するステップと;
(c)場合によっては、亜鉛酸化物をベースとしたナノ粒子からなるその多孔層をステップ(a)または(b)よりも高温にてアニーリングするステップと;
(d)アニーリングによって亜鉛酸化物に変換される可溶性亜鉛酸化物前駆体化合物を含む被覆溶液をナノ粒子からなる多孔層の上に付着させて中間複合体膜を形成するステップと;
(e)その中間複合体膜を乾燥させるステップと;
(f)乾燥したその中間複合体膜を少なくとも50℃の温度にてアニールして、亜鉛酸化物をベースとしたナノ粒子を含むとともに、複合体膜のアニーリング中に亜鉛酸化物前駆体化合物が変換されることによって形成される追加の亜鉛酸化物材料が含まれた半導体膜を生成させるステップを含んでいる。
(a)亜鉛酸化物をベースとしていて一次粒子の平均サイズが5〜200nmであるナノ粒子のコロイド溶液を含む種コーティングを基板に付着させるステップと;
(b)その種コーティングを乾燥させて亜鉛酸化物をベースとしたナノ粒子からなる多孔層を形成するステップと;
(c)場合によっては、亜鉛酸化物をベースとしたナノ粒子からなるその多孔層をステップ(a)または(b)よりも高温の50〜500℃、好ましくは100〜250℃の温度にてアニーリングするステップと;
(d)アニーリングによって亜鉛酸化物に変換される可溶性亜鉛酸化物前駆体化合物を含む被覆溶液をナノ粒子からなる上記多孔層の上に付着させて中間複合体膜を形成するステップと;
(e)その中間複合体膜を乾燥させるステップと;
(f)乾燥したその中間複合体膜を少なくとも50℃の温度、好ましくは500℃までの温度にてアニールして、亜鉛酸化物をベースとしたナノ粒子を含むとともに、上記複合体膜のアニーリング中に上記亜鉛酸化物前駆体化合物が変換されることによって形成される追加の亜鉛酸化物材料が含まれた半導体膜を生成させるステップを含む方法が含まれる。
Id = (W/2L)×μC (Vg - Vth)2
ただしIdは飽和ソース-ドレイン電流であり、Cは絶縁層に付随する幾何学的なゲート・キャパシタンスであり、WとLはデバイスの物理的サイズであり、μは、亜鉛酸化物をベースとした半導体の中でのキャリア(正孔または電子)の易動度であり、Vgは印加されたゲート電圧であり、Vthは閾値電圧である。理想的には、適切な極性のゲート電圧が印加されたときだけTFTは電流を流すことができる。しかしゲート電圧がゼロのとき、ソースとドレインの間の“オフ”電流は、亜鉛酸化物をベースとした半導体の固有導電率σ:
σ = nqμ
に依存することになろう。ただしnは電荷キャリア密度であり、qは電荷であり、
Vg = 0においてIsd = σ(Wt/L) Vsd
となっている。ただしtは亜鉛酸化物をベースとした半導体層の厚さであり、Vsdはソースとドレインの間に印加される電圧である。したがってTHTが例えばディスプレイにおいてオン/オフ電流比の大きな優れた電子式スイッチとして動作するには、半導体が大きなキャリア易動度を持つが固有導電率は非常に小さいこと、あるいはそれと同じことだが、電荷キャリア密度が小さいことが必要とされる。実際のデバイスではオン/オフ比が104を超えることが望ましい。
Id = (W/2L)×μCox (Vg - Vth)2
ただしWとLはそれぞれチャネル幅とチャネル長であり、Coxは酸化物層のキャパシタンスである。このキャパシタンスは、酸化物の厚さと誘電定数の関数である。この式があるため、飽和電界効果易動度は、Id 1/2をVgに対してプロットした曲線の直線部分に直線をフィットすることによって求めた。閾値電圧Vthは、この直線フィットのx切片である。
上記の種組成物SLF-1をエタノールの中で1.3%に希釈することによってコーティング溶液を調製した。この溶液を2000rpmの速度でスピン・コーティングすることによって基板に付着させた。スピン・コーティングの後、サンプルを乾燥した空気の中で200℃の温度にて10分間にわたってアニールした。アニーリングの後、以下の表に示す濃度(サンプル1-1と1-2)でメタノールに溶かした酢酸亜鉛からなる前駆体層を2000rpmにて基板にスピン・コーティングした。このメタノール溶液には痕跡レベルの水が含まれていてもよい。次にこの層を乾燥した大気中で200℃にて10分間にわたってアニールした。このプロセスの後、アルミニウム接点を蒸着によって付着させた。
上記の種組成物SLF-1をエタノールの中で1.3%に希釈することによって別のコーティング溶液を調製した。この溶液を2000rpmの速度でスピン・コーティングすることによって基板に付着させた。スピン・コーティングの後、サンプルを乾燥した空気の中で200℃の温度にて10分間にわたってアニールした。
この実施例では、種用のZnOナノ粒子と前駆体を順番にインクジェット印刷することによって亜鉛酸化物膜を付着させられることを示す。X-Y並進ステージに支持されているサンプル・テーブルと、Z並進ステージに支持されている圧電デマンド-モードのプリントヘッドと、これらの部品を制御するソフトウエアとからなるシステムを用いてインクジェット印刷の実験を行なった。このインクジェット・システムのプリントヘッドは、20〜60ピコリットルの範囲の液滴を供給するのに適している。印刷する約2ccの流体をサンプル・カートリッジの中に入れた後、印刷用固定構造にねじ込む。加圧した窒素を用いてプリントヘッドにインクを注入した。Tencor粗面計を用い、一連の較正サンプルについて印刷された膜の厚さを測定した。放出される液滴の数、インクの濃度、印刷された膜の厚さに関する単純なモデルで最適フィット直線回帰を利用し、液滴の体積を38ピコリットルと計算した。
この実施例では、コーティングの順番を逆にすることの効果を示す。本発明のサンプルでは、上記の種組成物SLF-1をエタノールの中で1.1%に希釈することによってコーティング溶液を調製した。この溶液を2000rpmの速度でスピン・コーティングすることによって基板に付着させた。スピン・コーティングの後、サンプルを乾燥した空気の中で200℃の温度にて10分間にわたってアニールした。
28 基板
30 ドレイン電極
44 ゲート電極
56 ゲート誘電体
70 半導体
100 トランジスタ
102 LCD画素
104 トランジスタ/画素セル
106 列またはデータ線
108 行または制御線
Claims (48)
- トランジスタで利用するため亜鉛酸化物をベースとした薄膜半導体を製造する方法であって、
(a)亜鉛酸化物をベースとしていて一次粒子の平均サイズが5〜200nmであるナノ粒子のコロイド溶液を含む種コーティングを基板に付着させるステップと;
(b)その種コーティングを乾燥させて亜鉛酸化物をベースとしたナノ粒子からなる多孔層を形成するステップと;
(c)場合によっては、亜鉛酸化物をベースとしたナノ粒子からなるその多孔層をステップ(a)または(b)よりも高温にてアニーリングするステップと;
(d)アニーリングによって亜鉛酸化物に変換される可溶性亜鉛酸化物前駆体化合物を含む被覆溶液をナノ粒子からなる上記多孔層の上に付着させて中間複合体膜を形成するステップと;
(e)その中間複合体膜を乾燥させるステップと;
(f)乾燥したその中間複合体膜を少なくとも50℃の温度にてアニールして、亜鉛酸化物をベースとしたナノ粒子を含むとともに、上記複合体膜のアニーリング中に上記亜鉛酸化物前駆体化合物が変換されることによって形成される追加の亜鉛酸化物材料が含まれた半導体膜を生成させるステップを含む方法。 - ステップ(f)におけるアニーリングの温度が130〜300℃である、請求項1に記載の方法。
- ステップ(f)において上記半導体膜を10秒間〜10分間にわたってアニーリングする、請求項1に記載の方法。
- ステップ(c)においてナノ粒子からなる上記多孔層をアニールした後に上記被覆溶液を付着させる、請求項1に記載の方法。
- 上記半導体膜をステップ(c)において場合によってはアニールし、および/またはステップ(f)においてレーザー・アニーリングによってアニールする、請求項1に記載の方法。
- 亜鉛酸化物をベースとしたナノ粒子の上記コロイド溶液を第1の温度で基板に付着させ、次いでステップ(c)においてそれよりも高い50〜500℃の温度でアニールした後、上記被覆溶液を付着させる、請求項1に記載の方法。
- ステップ(a)の間を通じて上記基板の温度が300℃以下である、請求項1に記載の方法。
- ステップ(c)において場合によっては行なわれるアニーリングと、ステップ(f)におけるアニーリングを、周囲条件下で空気が存在している状態で行なう、請求項1に記載の方法。
- 上記被覆溶液なしでアニールした場合、上記半導体膜の易動度が、上記種コーティング単独の易動度よりも実質的に大きい、請求項1に記載の方法。
- 上記半導体膜の電子易動度を0.01cm2/V秒よりも大きくできる、請求項1に記載の方法。
- 上記半導体膜のバンド・ギャップが5eV未満である、請求項1に記載の方法。
- 亜鉛酸化物をベースとした上記ナノ粒子が、加熱によって実質的に透明な層を含む層を形成する、請求項1に記載の方法。
- 上記ナノ粒子がドープされていない亜鉛酸化物からなる、請求項1に記載の方法。
- 上記ナノ粒子または上記前駆体溶液が、アクセプタとなるドーパントを含む、請求項1に記載の方法。
- 上記ナノ粒子が有機溶媒の中にコロイドとして分散されている、請求項1に記載の方法。
- 上記種コーティングを、乾燥質量でナノ粒子が0.02〜1g/m2となるレベルで基板に付着させる、請求項1に記載の方法。
- 上記被覆溶液を、前駆体化合物が2×10-4〜0.01モル/m2となるレベルで付着させる、請求項1に記載の方法。
- 上記被覆溶液中の理論的に変換される亜鉛酸化物前駆体化合物に対する上記種コーティング中のナノ粒子のモル比が0.02〜60の範囲である、請求項1に記載の方法。
- 上記種コーティングおよび/または上記被覆溶液をインクジェット・プリンタで付着させる、請求項1に記載の方法。
- 上記インクジェット・プリンタが、連続的なインクジェット・プリンタ、または要求に応じて液滴を落とすインクジェット・プリンタである、請求項19に記載の方法。
- 上記種コーティングおよび/または上記被覆溶液を、スピン・コーティング、押し出しコーティング、ホッパー・コーティング、浸漬コーティング、スプレー・コーティングのいずれかで付着させる、請求項1に記載の方法。
- ウェブ基板の表面をパターニングされた半導体薄膜で覆う、請求項1に記載の方法。
- 上記半導体膜が、誘電体層と、ゲート電極と、ソース電極と、ドレイン電極とを備える電界効果トランジスタの中の活性層であり、上記ゲート電極と上記半導体膜の両方が上記誘電体層と接触し、上記ソース電極と上記ドレイン電極の両方が上記半導体膜に接触しているのであれば、上記誘電体層と、上記ゲート電極と、上記半導体膜と、上記ソース電極と、上記ドレイン電極の順番が任意である、請求項1に記載の方法。
- 上記ゲート電極が、そのゲート電極に印加される電圧により、上記半導体膜を通って上記ソース電極と上記ドレイン電極の間を流れる電流を制御することができる、請求項23に記載の方法。
- 上記トランジスタのソース/ドレイン電流のオン/オフ比が少なくとも104である、請求項23に記載の方法。
- 上記トランジスタがエンハンスメント・モード動作の構成である、請求項23に記載の方法。
- 上記基板が、無機または有機の電気的絶縁材料からなる誘電体層を備える、請求項1に記載の方法。
- 上記種コーティングを上記誘電体層の表面の少なくとも一部に堆積させる操作を含む、請求項27に記載の方法。
- 上記誘電体層が実質的に透明な材料を含む、請求項28に記載の方法。
- 上記誘電体層がAl2O3/TiO2またはAl2O3を含む、請求項29に記載の方法。
- 上記種コーティングを堆積させる前に、上記誘電体層の上に少なくとも1種類の材料を堆積させてソースとドレインを形成する操作をさらに含む、請求項28に記載の方法。
- ソースとドレインを形成するための材料をイオン・ビーム・スパッタリングによって上記誘電体層の上に堆積させた後、アニーリングを利用して上記半導体膜にソースとドレインを形成するためのその材料を拡散ドーピングする、請求項31に記載の方法。
- 上記ソース電極と、上記ドレイン電極と、上記ゲート電極が、それぞれ独立に、ドープされたシリコン、金属、導電性ポリマーの中から選択した材料を含む、請求項23に記載の方法。
- 上記ソース電極と、上記ドレイン電極と、上記ゲート電極が、それぞれインジウム-スズ酸化物を含んでおり、上記基板がガラスを含む、請求項23に記載の方法。
- 上記トランジスタが非参加型支持体を備えていて、その支持体が場合によっては可撓性である、請求項1に記載の方法。
- 薄膜半導体デバイスを製造するため、ステップ(f)の後に、
(g)上記半導体膜によって互いに離されていると同時に、その半導体膜に電気的に接続されたソース電極とドレイン電極を形成するステップと;
(h)上記半導体膜から離れたゲート電極を形成するステップを含む、請求項1に記載の方法。 - 必ずしも以下の順番でなくてもよいが、
(a)基板を用意するステップと;
(b)その基板の上にゲート電極材料を供給するステップと;
(c)そのゲート電極材料の上に誘電体層を設けるステップと;
(d)そのゲート誘電体層の上に上記半導体膜を形成するステップと;
(e)その半導体膜と連続にソース電極とドレイン電極を設けるステップを含む、請求項1に記載の方法。 - ステップ(f)として、上記半導体膜の上面に金属接点を付着させるステップをさらに含む、請求項37に記載の方法。
- 上記ステップを記載した順番で実施する、請求項38に記載の方法。
- 上記基板が可撓性である、請求項1に記載の方法。
- ステップ(a)〜(f)の全体を150℃よりも低いピーク温度で実施する、請求項1に記載の方法。
- 基板要素の表面に半導体膜をインクジェット印刷する方法であって、
a)ディジタル・データ信号に応答するインクジェット・プリンタを用意するステップと;
b)請求項1に記載の種溶液を第1のプリンタヘッドに装填するステップと;
c)ディジタル・データ信号に応答し、その種溶液を用いて上記基板の表面に印刷するステップと;
d)請求項1に記載の被覆溶液を第2のプリンタヘッドに装填するステップと;
e)ディジタル・データ信号に応答し、その被覆溶液を用いて第1のコーティングの上に印刷するステップと;
f)印刷された上記基板をアニーリングするステップを含む方法。 - 請求項1に記載の方法に従って製造した薄膜トランジスタを複数個備えるエレクトロニクス・デバイス。
- 上記複数個の薄膜トランジスタがが非参加型支持体の上に載っていて、その支持体が場合によっては可撓性である、請求項43に記載のエレクトロニクス・デバイス。
- 集積回路、アクティブ-マトリックス・ディスプレイ、太陽電池、フラット・パネル・ディスプレイ、アクティブ-マトリックス・イメージャ、センサー、rf価格ラベル、rf識別ラベル、rf目録ラベルからなるグループの中から選択される、請求項43に記載のエレクトロニクス・デバイス。
- 請求項1に記載の方法に従って製造したエンハンスメント・モードの電界効果トランジスタを含むスイッチに接続された少なくとも1つの表示素子を備えるオプトエレクトロニクス・ディスプレイ装置。
- アクティブ-マトリックス液晶ディスプレイを備える、請求項46に記載のオプトエレクトロニクス・ディスプレイ装置。
- 上記エレクトロニクス・デバイスが、(a)エンハンスメント・モードの電界効果トランジスタにカップルした実質的に透明なキャパシタを備える実質的に透明なダイナミック・ランダム-アクセス・メモリ・セルと;(b)エンハンスメント・モードの電界効果トランジスタにカップルした負荷デバイスを備える実質的に透明な論理インバータと;(c)エンハンスメント・モードの電界効果トランジスタを備える増幅器からなるグループの中から選択され、上記エンハンスメント・モードの電界効果トランジスタが請求項1に記載の方法で製造されている、請求項43に記載のエレクトロニクス・デバイス。
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JP5249021B2 (ja) | 2013-07-31 |
US7691666B2 (en) | 2010-04-06 |
EP1891666A1 (en) | 2008-02-27 |
US20100120197A1 (en) | 2010-05-13 |
WO2006138071A1 (en) | 2006-12-28 |
US20060284171A1 (en) | 2006-12-21 |
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