JP2012501941A - 変性された粒子、及びこれらを含む分散液 - Google Patents
変性された粒子、及びこれらを含む分散液 Download PDFInfo
- Publication number
- JP2012501941A JP2012501941A JP2011525509A JP2011525509A JP2012501941A JP 2012501941 A JP2012501941 A JP 2012501941A JP 2011525509 A JP2011525509 A JP 2011525509A JP 2011525509 A JP2011525509 A JP 2011525509A JP 2012501941 A JP2012501941 A JP 2012501941A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- particles
- dispersion
- particle
- alkyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002245 particle Substances 0.000 title claims abstract description 74
- 239000006185 dispersion Substances 0.000 title claims description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 56
- 239000002184 metal Substances 0.000 claims abstract description 56
- 239000000203 mixture Substances 0.000 claims abstract description 19
- 239000003607 modifier Substances 0.000 claims abstract description 19
- 239000002612 dispersion medium Substances 0.000 claims abstract description 14
- 150000004767 nitrides Chemical class 0.000 claims abstract description 12
- 150000004770 chalcogenides Chemical class 0.000 claims abstract description 11
- 229910001463 metal phosphate Inorganic materials 0.000 claims abstract description 11
- 229910001507 metal halide Inorganic materials 0.000 claims abstract description 8
- 150000005309 metal halides Chemical class 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 100
- 239000000758 substrate Substances 0.000 claims description 23
- 229910044991 metal oxide Inorganic materials 0.000 claims description 19
- 150000004706 metal oxides Chemical class 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 229910052717 sulfur Inorganic materials 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 16
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 229910052711 selenium Inorganic materials 0.000 claims description 9
- 238000000354 decomposition reaction Methods 0.000 claims description 7
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229920000307 polymer substrate Polymers 0.000 claims description 6
- 238000009835 boiling Methods 0.000 claims description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 4
- 125000006832 (C1-C10) alkylene group Chemical group 0.000 claims description 3
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 3
- 230000001376 precipitating effect Effects 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910007717 ZnSnO Inorganic materials 0.000 claims description 2
- 239000000010 aprotic solvent Substances 0.000 claims description 2
- 230000005670 electromagnetic radiation Effects 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims 3
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims 2
- 229910052787 antimony Inorganic materials 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 description 49
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 30
- 239000004065 semiconductor Substances 0.000 description 15
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 14
- 238000002411 thermogravimetry Methods 0.000 description 12
- 239000011701 zinc Substances 0.000 description 11
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 239000000725 suspension Substances 0.000 description 8
- BJWSZGWRZSOZQT-UHFFFAOYSA-N 5-ethoxy-3,5-dioxopentanoic acid Chemical compound CCOC(=O)CC(=O)CC(O)=O BJWSZGWRZSOZQT-UHFFFAOYSA-N 0.000 description 7
- 238000001556 precipitation Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000004698 Polyethylene Substances 0.000 description 5
- 238000007306 functionalization reaction Methods 0.000 description 5
- 229920000573 polyethylene Polymers 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- YZGQDNOIGFBYKF-UHFFFAOYSA-N Ethoxyacetic acid Chemical compound CCOCC(O)=O YZGQDNOIGFBYKF-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical class O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000000197 pyrolysis Methods 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- -1 chalcogenide compounds Chemical class 0.000 description 3
- 238000003618 dip coating Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- LIKMAJRDDDTEIG-UHFFFAOYSA-N 1-hexene Chemical compound CCCCC=C LIKMAJRDDDTEIG-UHFFFAOYSA-N 0.000 description 2
- YHBWXWLDOKIVCJ-UHFFFAOYSA-N 2-[2-(2-methoxyethoxy)ethoxy]acetic acid Chemical compound COCCOCCOCC(O)=O YHBWXWLDOKIVCJ-UHFFFAOYSA-N 0.000 description 2
- OXTNCQMOKLOUAM-UHFFFAOYSA-N 3-Oxoglutaric acid Chemical compound OC(=O)CC(=O)CC(O)=O OXTNCQMOKLOUAM-UHFFFAOYSA-N 0.000 description 2
- SBBDHANTMHIRGW-UHFFFAOYSA-N 4-[(2,4-dihydroxy-3,3-dimethylbutanoyl)amino]butanoic acid Chemical compound OCC(C)(C)C(O)C(=O)NCCCC(O)=O SBBDHANTMHIRGW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910005793 GeO 2 Inorganic materials 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910020923 Sn-O Inorganic materials 0.000 description 2
- 229910007541 Zn O Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000009295 crossflow filtration Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910001510 metal chloride Inorganic materials 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 150000004772 tellurides Chemical class 0.000 description 2
- 150000003568 thioethers Chemical class 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- 238000004009 13C{1H}-NMR spectroscopy Methods 0.000 description 1
- GVNVAWHJIKLAGL-UHFFFAOYSA-N 2-(cyclohexen-1-yl)cyclohexan-1-one Chemical compound O=C1CCCCC1C1=CCCCC1 GVNVAWHJIKLAGL-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- HGINADPHJQTSKN-UHFFFAOYSA-M 3-ethoxy-3-oxopropanoate Chemical compound CCOC(=O)CC([O-])=O HGINADPHJQTSKN-UHFFFAOYSA-M 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 101150065749 Churc1 gene Proteins 0.000 description 1
- 229910020599 Co 3 O 4 Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 238000005684 Liebig rearrangement reaction Methods 0.000 description 1
- 229910006715 Li—O Inorganic materials 0.000 description 1
- 229910017911 MgIn Inorganic materials 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 102100038239 Protein Churchill Human genes 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 229910007611 Zn—In—O Inorganic materials 0.000 description 1
- 229910007604 Zn—Sn—O Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 229920002988 biodegradable polymer Polymers 0.000 description 1
- 239000004621 biodegradable polymer Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000001246 colloidal dispersion Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 150000004673 fluoride salts Chemical class 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229920001477 hydrophilic polymer Polymers 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001509 metal bromide Inorganic materials 0.000 description 1
- 239000011817 metal compound particle Substances 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910001511 metal iodide Inorganic materials 0.000 description 1
- 238000001471 micro-filtration Methods 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 238000001728 nano-filtration Methods 0.000 description 1
- 125000005487 naphthalate group Chemical group 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- UNBPFPUTIKOOOI-UHFFFAOYSA-N oxane-2,4,6-trione Chemical compound O=C1CC(=O)OC(=O)C1 UNBPFPUTIKOOOI-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002721 polycyanoacrylate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000000108 ultra-filtration Methods 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
- C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
- C09C1/04—Compounds of zinc
- C09C1/043—Zinc oxide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02601—Nanoparticles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
- Y10T428/2991—Coated
- Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]
- Y10T428/2995—Silane, siloxane or silicone coating
Abstract
Description
X1が、O、S、及びSeから選ばれ、
X2が、OH、OCH3、OC2H5、COOH、OSi(R1)3-x-y(R2)y(R3)xから選ばれ、
x、yが、それぞれ、互いに独立して、0、1、2、又は3であり、及びxとyの合計が3以下であり、
R1、R2、R3、R4が、独立して、H、C1−C10−アルキルから選ばれ、
X3が、O、S、Se及びCH2から選ばれ、
n、m、pが、それぞれ、互いに独立して、0、1、2、又は3、好ましくは0、1、2、及び特に好ましくは1であり、
X4が、O、S、Se、C=O、−R4C=CH−、OCH2から選ばれ、
X5が、H、OH、OCH3、OC2H5、OSi(R1)(3-x-y)(R2)x(R3)y、COOR5、OCOOR5から選ばれ、
R5が、C1−C4−アルキルから選ばれ、
X6が、SH、NH2、OSi(R1 3-x-y)(R2)y(R3)xから選ばれ、
X7が、C1−C10−アルキレン、O、S、Se、Teから選ばれ、
rが、1〜1000の整数であり、
R6が、H、C1−C10−アルキル及びハロゲンから選ばれる)
から選ばれる調節剤で変性されていることを特徴とする粒子によって達成される。
のものである。
−nが0、又はnが1、及びX3が、O、S、Se、C=O、−HC=CH−、CH2から選ばれ、
−mが0、又はm=1、及びX4が、O、S、C=O、及びOCH2から選ばれ、
−pが0、又は1であり、及び
−X5が、OCH3、OC2H5、CO2R5、及びOCO2R5から選ばれる、
ものである。
(a)一次の平均粒子径が1〜500nmの金属、金属カルコゲニド、金属ハロゲン化物、金属ニトリド、金属ホスフィド、金属ボライド、金属フォスフェイト粒子、
(b)上記式の一つを有する化合物の中から選ばれる1種以上の調節剤、
(c)分散媒体、
を含む分散物を提供する。
a)未処理の、金属、金属カルコゲニド、金属ハロゲン化物、金属ニトリド、金属ホスフィド、金属ボライド、金属フォスフェイト粒子を非プロトン性の溶媒に懸濁させる工程、
b)次に、これらを、式(I)の、1種以上の調整剤と混合し、変性した粒子を形成する工程、
によって製造することができる。
1118mlの2−プロパノール及び36.81gのZn(OAc)2 *2H2Oを、最初に2lの閉塞した装置に配置し、そして75℃に加熱した。これと平行して、584ml中の2−プロパノール中の16.38gのカリウムヒドロキシドを75℃に加熱した。次に、カリウムヒドロキシド/2−プロパノール溶液を、Zn(OAc)2懸濁液に加えた。この混合物を。425rpmで攪拌しながら75℃で1時間加熱した。室温に冷却した後、形成された酸化亜鉛を一晩、落ち着かせた。浮遊物2−プロパノールを、吸引ろ過、除去し、そして次に酸化亜鉛を、それぞれ500mlのTHFで2回洗浄した。浮遊物THFを吸引して、ろ過除去した。
実施例1からの湿った酸化亜鉛を1lのクロロホルムと混合した。ZnO含有量が1.6g(19.66mmol)の、クロロホルム中200gのZnO懸濁液を、3.93mmolのエチルトリメチルシリルマロナート(Flukaより)と、室温で混合した。添加した後、数秒間後に、溶液は透明になった。この混合物を室温で更に15分間攪拌し、そして次に分散物を、ZnO含有量が4質量%になるまで濃縮した。
(R.Willstatter,A.Pfannenstiel“Uber Succinyldiessigsaureester”,Justus Liebigs Annalen der Chemie,1921,422,1−15の変性法)
14.45g(0.099mol)の3−オキソグルタル酸(1,3−アセトンジカルボン酸)を100ml中の一首フラスコ10.2g(0.10mol)の無水酢酸に加えた。得られたスラリを、固体が均一化して黄色のオイルになるまで強く振った。更に振り、混合物が暖かくなり、そして白色の固体(3−オキソグルタル酸無水物)が、自然に沈澱した。混合物を更に5分間振り、そしてフラスコをRT(室温)で12時間保持した。次に混合物をろ過し、そして固体をそれぞれ5mlのトルエンで3回洗浄し、及び7mlのn−ヘキセンで1回洗浄した。次に残留物を、真空の乾燥オーブン内で、5時間保存した。
実施例1からの湿った酸化亜鉛を、1lのメチレンクロリドと混合した。ZnOの含有量が1.6g(19.66mmol)の、メチオレンクロリド中の200gのZnO懸濁液を、実施例3からの、1.14gのモノエチル3−オキソグルタラート(6.55mmol)と、室温で混合した;分散物は、直ちに透明になった。次にメチレンクロリドをロータリーエバポレーター上で、40℃で蒸留し、そして残留物を減圧下に4時間、乾燥させた。
100gの、メチレンクロリド中の酸化亜鉛(0.80gのZnO(9.83mmol))の分散物を、実施例3からの0.34g(1.97mmol)のモノエチル3−オクソグルタラートを攪拌により混合した。分散物は直ちに透明になり、そして次に蒸発させて(ある程度)乾燥させた。次に形成された軽い黄色の粉を、減圧下に4時間乾燥させた。
実施例1からの湿った酸化亜鉛を1lのメチレンクロリドと混合した。ZnO含有量が1.6g(19.66mmol)の、メチレンクロリド中200gのZnO懸濁液を、0.12gのモノエチル3−オキソグルタラート(0.67mmol)と、室温で混合した;分散物は、直ちに透明になった。次に、ロータリーエバポレーター上で、40℃で、メチレンクロリドを蒸留し、そして残留物を減圧下に4時間、乾燥させた。
実施例1からの湿った酸化亜鉛を、1lのTHFと混合した。3.5gの2−[2−(2−メトキシエトキシ)エトキシ]酢酸(Fluka)を、この懸濁液に加えた。形成された混合物を、攪拌しながら加熱して沸騰させ、そしてこの温度で、30分間維持した。懸濁液は透明になった。次にTHFをロータリーエバポレーター上で、60℃で蒸留し、そして残留物を減圧下に4時間、乾燥させた。
実施例1からの湿った酸化亜鉛を、1lのTHFと混合した。5gのエトキシ酢酸(Fluka)を、この懸濁液に加えた。形成された混合物を、攪拌しながら加熱して沸騰させ、そしてこの温度で、30分間維持した。懸濁液は透明になった。次にTHFをロータリーエバポレーター上で、60℃で蒸留除去し、そして残留物を減圧下に4時間、乾燥させた。
実施例6に従う、ZnOの含有量が4質量%の、メチレンクロリド中の分散物の3滴を、ブチルグリコールの5体積%と混合し、そしてスピンコーティング(4000rpm、30s)によって、(SiO2誘電性層(200nm)を有する)洗浄したSi(ドープした)基材に施した。次にサンプルを200℃に加熱し、そして200℃で1時間維持した。
Claims (20)
- 金属、金属ハロゲン化物、金属カルコゲニド、金属ニトリド、金属ホスフィド、金属フォスフェイト、金属ボライド、又はこれらの混合物を含む粒子であって、平均粒径が1〜500nmであり、そしてその表面が以下の式(I)(II)及び(III)
X1が、O、S、及びSeから選ばれ、
X2が、OH、OCH3、OC2H5、COOH、OSi(R1)3-x-y(R2)y(R3)xから選ばれ、
x、yが、それぞれ、互いに独立して、0、1、2、又は3であり、及びxとyの合計が3以下であり、
R1、R2、R3、R4が、独立して、H、C1−C10−アルキルから選ばれ、
X3が、O、S、Se及びCH2から選ばれ、
n、m、pが、それぞれ、互いに独立して、0、1、2、又は3、好ましくは0、1、2、及び特に好ましくは1であり、
X4が、O、S、Se、C=O、−R4C=CH−、OCH2から選ばれ、
X5が、H、OH、OCH3、OC2H5、OSi(R1)(3-x-y)(R2)x(R3)y、COOR5、OCOOR5から選ばれ、
R5が、C1−C4−アルキルから選ばれ、
X6が、SH、NH2、OSi(R1 3-x-y)(R2)y(R3)xから選ばれ、
X7が、C1−C10−アルキレン、O、S、Se、Teから選ばれ、
rが、1〜1000の整数であり、
R6が、H、C1−C10−アルキル及びハロゲンから選ばれる)
から選ばれる調節剤で変性されていることを特徴とする粒子。 - 粒子が金属酸化物であることを特徴とする請求項1に記載の粒子。
- 金属酸化物が、Ti、Zr、Zn、Ga、In、Ge、Sn、Ce、Sb、Biから成る群から選ばれる、少なくとも1種の金属を含むことを特徴とする請求項2に記載の粒子。
- 金属酸化物が、ZnO、In2O3、SnO2、Ga2O3、Zn2SnO4、ZnSnO3、Zn2In2O5、Zn3In2O6、In4Sn3O12、GaInO3、アモルファスIn−Ga−Znオキシドから成る群から選ばれることを特徴とする請求項3に記載の粒子。
- Sn−、Al−、Sb−、Ga−、Bi−、In−、Mg−、Li−、H−、OH−、N−ドープしたZnO、Al−ドープしたMgO、及びSn−ドープしたIn2O3から選ばれることを特徴とする請求項1〜4の何れか1項に記載の粒子。
- 平均径が、5〜100nm、特に10〜50nmであることを特徴とする請求項1〜5の何れか1項に記載の粒子。
- 調節剤の粒子に対するモル割合が、2:1〜1:60、特に1:1〜1:30、特に好ましくは1:25〜1:5であることを特徴とする請求項1〜8の何れか1項に記載の粒子。
- 調節剤の分解温度が250℃未満、特に200℃未満であることを特徴とする請求項1〜9の何れか1項に記載の粒子。
- a)未処理の粒子を非プロトン性の溶媒に懸濁させる工程、
b)次に、これらを、請求項1に定義した式(I)の、1種以上の調整剤と混合し、変性した粒子を形成する工程、
を含むことを特徴とする請求項1〜10の何れか1項に記載の変性した粒子を製造するための方法。 - (a)平均粒径が1〜500nmの、金属、金属カルコゲニド、金属ハロゲン化物、金属ニトリド、金属ホスフィド、金属ボライド、金属フォスフェイト粒子、又はこれらの混合物、
(b)以下の式(I)(II)及び(III)
X1が、O、S、及びSeから選ばれ、
X2が、OH、OCH3、OC2H5、COOH、OSi(R1)3-x-y(R2)y(R3)xから選ばれ、
x、yが、それぞれ、互いに独立して、0、1、2、又は3であり、及びxとyの合計が3以下であり、
R1、R2、R3、R4が、独立して、H、C1−C10−アルキルから選ばれ、
X3が、O、S、Se及びCH2から選ばれ、
n、m、pが、それぞれ、互いに独立して、0、1、2、又は3、好ましくは0、1、2、及び特に好ましくは1であり、
X4が、O、S、Se、C=O、−R4C=CH−、OCH2から選ばれ
X5が、H、OH、OCH3、OC2H5、OSi(R1)(3-x-y)(R2)x(R3)y、COOR5、OCOOR5から選ばれ、
R5が、C1−C4−アルキルから選ばれ、
X6が、SH、NH2、OSi(R1 3-x-y)(R2)y(R3)xから選ばれ、
X7が、C1−C10−アルキレン、O、S、Se、Teから選ばれ、
rが、1〜1000の整数であり、
R6が、H、C1−C10−アルキル及びハロゲンから選ばれる)
から選ばれる1種以上の調節剤、
(c)分散媒体、
を含む分散物。 - 分散媒体が、沸点が100℃未満の有機液体から選ばれることを特徴とする請求項12に記載の分散物。
- 分散媒体が、3〜10・10-30C・mの双極子モーメントを有する有機液体から選ばれることを特徴とする請求項12又は13の何れかに記載の分散物。
- 分散した粒子の含有量が、0.1〜10質量%、特に1〜5質量%であることを特徴とする請求項12〜14の何れか1項に記載の分散物。
- a)請求項1〜11の何れか1項に記載の表面−変性された粒子及び分散媒体を含む分散物を製造する工程、
b)分散物を基材に施す工程、
c)分散媒体を除去する工程、
d)100℃〜500℃の温度処理によって、又は電磁気の放射で、調節剤を揮発性物質に変換する工程、
を含むことを特徴とする基材に層を沈澱させる方法。 - 基材が、ポリマー基材であることを特徴とする請求項16に記載の方法。
- 請求項16又は17の何れかに記載の方法によって得ることができる基材と層を含む複合体。
- 層が伝導性であり、及び透過性であることを特徴とする請求項18に記載の複合体。
- 請求項16又は17の何れかに記載の方法によって得ることができる層、又は請求項18又は19に記載の複合体を含む、電子部品、特にFET。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08163703.5 | 2008-09-04 | ||
EP08163703 | 2008-09-04 | ||
PCT/EP2009/061103 WO2010026102A1 (de) | 2008-09-04 | 2009-08-28 | Modifizierte partikel und diese enthaltende dispersionen |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012501941A true JP2012501941A (ja) | 2012-01-26 |
JP2012501941A5 JP2012501941A5 (ja) | 2012-10-11 |
JP5599797B2 JP5599797B2 (ja) | 2014-10-01 |
Family
ID=41277503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011525509A Expired - Fee Related JP5599797B2 (ja) | 2008-09-04 | 2009-08-28 | 変性された粒子、及びこれらを含む分散液 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8734899B2 (ja) |
EP (1) | EP2321373A1 (ja) |
JP (1) | JP5599797B2 (ja) |
KR (1) | KR20110066162A (ja) |
CN (1) | CN102144004B (ja) |
TW (1) | TWI488815B (ja) |
WO (1) | WO2010026102A1 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2009324379A1 (en) | 2008-12-11 | 2011-07-28 | Basf Se | Enrichment of valuable ores from mine waste (tailings) |
US8940814B2 (en) * | 2008-12-12 | 2015-01-27 | Basf Se | Dispersions comprising functionalized oxidic nanoparticles |
EA022857B1 (ru) | 2009-03-04 | 2016-03-31 | Басф Се | Магнитное разделение руд цветных металлов путем многостадийного кондиционирования |
CN102612406A (zh) * | 2009-11-20 | 2012-07-25 | 巴斯夫欧洲公司 | 用于制备羧酸和/或羧酸酐的在至少一个催化剂层中具有锑酸钒的多层催化剂及具有低热点温度的制备邻苯二甲酸酐的方法 |
CN102668086B (zh) | 2009-12-18 | 2016-01-06 | 巴斯夫欧洲公司 | 位于具有可由溶液低温加工的电介质的机械柔性聚合物衬底上的金属氧化物场效应晶体管 |
US20110230668A1 (en) * | 2010-03-19 | 2011-09-22 | Basf Se | Catalyst for gas phase oxidations based on low-sulfur and low-calcium titanium dioxide |
TW201206896A (en) | 2010-04-13 | 2012-02-16 | Basf Se | Process for controlling a gas phase oxidation reactor for preparation of phthalic anhydride |
CN102947218B (zh) | 2010-04-23 | 2016-05-11 | 皮瑟莱根特科技有限责任公司 | 纳米晶体的合成、盖帽和分散 |
JP2013525250A (ja) | 2010-04-28 | 2013-06-20 | ビーエーエスエフ ソシエタス・ヨーロピア | 溶液中で亜鉛錯体を調製する方法 |
US8865000B2 (en) | 2010-06-11 | 2014-10-21 | Basf Se | Utilization of the naturally occurring magnetic constituents of ores |
US8859459B2 (en) | 2010-06-30 | 2014-10-14 | Basf Se | Multilayer catalyst for preparing phthalic anhydride and process for preparing phthalic anhydride |
US9212157B2 (en) | 2010-07-30 | 2015-12-15 | Basf Se | Catalyst for the oxidation of o-xylene and/or naphthalene to phthalic anhydride |
US9376457B2 (en) | 2010-09-03 | 2016-06-28 | Basf Se | Hydrophobic, functionalized particles |
JP2014503446A (ja) | 2010-10-27 | 2014-02-13 | ピクセリジェント・テクノロジーズ,エルエルシー | ナノ結晶の合成、キャップ形成および分散 |
US9359689B2 (en) | 2011-10-26 | 2016-06-07 | Pixelligent Technologies, Llc | Synthesis, capping and dispersion of nanocrystals |
KR101978835B1 (ko) * | 2012-03-16 | 2019-05-15 | 한국전자통신연구원 | 박막 트랜지스터 |
WO2014119592A1 (ja) * | 2013-02-04 | 2014-08-07 | 独立行政法人産業技術総合研究所 | 抵抗体、誘電体等の電子部品用無機材料ペースト及び該無機材料ペーストの製造方法 |
FI130559B (en) * | 2021-06-23 | 2023-11-21 | Turun Yliopisto | Semiconductor structure, semiconductor device and method |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002537219A (ja) * | 1999-02-23 | 2002-11-05 | バイエル アクチェンゲゼルシャフト | ナノ粒子状で再分散可能な酸化亜鉛ゲル |
JP2003073122A (ja) * | 2001-09-04 | 2003-03-12 | Mitsui Chemicals Inc | 無機微粒子分散液及びそれを用いて製造される複合材料組成物 |
JP2004182483A (ja) * | 2002-11-29 | 2004-07-02 | Mitsubishi Chemicals Corp | 酸化亜鉛超微粒子の製造方法 |
WO2006038420A1 (ja) * | 2004-09-30 | 2006-04-13 | Kaneka Corporation | ポリマー修飾金属カルコゲン化物ナノ粒子の製造方法 |
JP2007042690A (ja) * | 2005-07-29 | 2007-02-15 | Fujifilm Holdings Corp | ナノ粒子分散液、それを用いた半導体デバイスの製造方法及び半導体デバイス |
JP2008111187A (ja) * | 2006-10-30 | 2008-05-15 | Samsung Electronics Co Ltd | ナノ粒子の分散方法及びこれを用いたナノ粒子薄膜の製造方法 |
JP2008544522A (ja) * | 2005-06-16 | 2008-12-04 | イーストマン コダック カンパニー | 亜鉛酸化物をベースとした半導体材料を含む薄膜トランジスタ |
JP2008547195A (ja) * | 2005-06-16 | 2008-12-25 | イーストマン コダック カンパニー | 亜鉛酸化物をベースとした半導体材料を含む薄膜トランジスタ |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2303330A (en) | 1942-02-02 | 1942-12-01 | New Jersey Zinc Co | Zinc oxide |
DE10063092A1 (de) | 2000-12-18 | 2002-06-20 | Henkel Kgaa | Nanoskalige Materialien in Hygiene-Produkten |
US7553512B2 (en) | 2001-11-02 | 2009-06-30 | Cabot Corporation | Method for fabricating an inorganic resistor |
JP2004010807A (ja) * | 2002-06-10 | 2004-01-15 | Toyo Ink Mfg Co Ltd | 水性分散体の製造方法 |
US20050182153A1 (en) * | 2002-06-12 | 2005-08-18 | Koji Yokoi | Porous metal oxide material in flake form, method for producing the same and cosmetic, coating material resin composition ink composition and paper comprising the same |
DE10257388A1 (de) | 2002-12-06 | 2004-06-24 | Sustech Gmbh & Co. Kg | Nanopartikuläres redispergierbares Zinkoxidpulver |
DE10304849A1 (de) | 2003-02-06 | 2004-08-19 | Institut für Neue Materialien gemeinnützige Gesellschaft mit beschränkter Haftung | Chemomechanische Herstellung von Funktionskolloiden |
WO2004087577A1 (ja) | 2003-03-31 | 2004-10-14 | Toto Ltd. | 表面改質二酸化チタン微粒子とその分散液、およびその製造方法 |
DE102004048230A1 (de) | 2004-10-04 | 2006-04-06 | Institut für Neue Materialien Gemeinnützige GmbH | Verfahren zur Herstellung von Nanopartikeln mit maßgeschneiderter Oberflächenchemie und entsprechenden Kolloiden |
DE102005007374A1 (de) | 2005-02-17 | 2006-08-24 | Universität Ulm | Nanopartikel und deren Verwendung |
JP4918994B2 (ja) * | 2005-05-30 | 2012-04-18 | 住友電気工業株式会社 | 金属被膜の形成方法および金属配線 |
DE102005047807A1 (de) | 2005-06-04 | 2006-12-07 | Solvay Infra Bad Hönningen GmbH | Modifizierte Nanopartikel |
KR20080108767A (ko) * | 2007-06-11 | 2008-12-16 | 삼성에스디아이 주식회사 | 전극 단자부 코팅재 및 이를 구비한 플라즈마 디스플레이패널 |
-
2009
- 2009-08-28 EP EP09782305A patent/EP2321373A1/de not_active Withdrawn
- 2009-08-28 KR KR1020117007826A patent/KR20110066162A/ko active IP Right Grant
- 2009-08-28 US US13/062,229 patent/US8734899B2/en not_active Expired - Fee Related
- 2009-08-28 WO PCT/EP2009/061103 patent/WO2010026102A1/de active Application Filing
- 2009-08-28 JP JP2011525509A patent/JP5599797B2/ja not_active Expired - Fee Related
- 2009-08-28 CN CN200980134455.XA patent/CN102144004B/zh not_active Expired - Fee Related
- 2009-09-03 TW TW098129750A patent/TWI488815B/zh not_active IP Right Cessation
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002537219A (ja) * | 1999-02-23 | 2002-11-05 | バイエル アクチェンゲゼルシャフト | ナノ粒子状で再分散可能な酸化亜鉛ゲル |
JP2003073122A (ja) * | 2001-09-04 | 2003-03-12 | Mitsui Chemicals Inc | 無機微粒子分散液及びそれを用いて製造される複合材料組成物 |
JP2004182483A (ja) * | 2002-11-29 | 2004-07-02 | Mitsubishi Chemicals Corp | 酸化亜鉛超微粒子の製造方法 |
WO2006038420A1 (ja) * | 2004-09-30 | 2006-04-13 | Kaneka Corporation | ポリマー修飾金属カルコゲン化物ナノ粒子の製造方法 |
JP2008544522A (ja) * | 2005-06-16 | 2008-12-04 | イーストマン コダック カンパニー | 亜鉛酸化物をベースとした半導体材料を含む薄膜トランジスタ |
JP2008547195A (ja) * | 2005-06-16 | 2008-12-25 | イーストマン コダック カンパニー | 亜鉛酸化物をベースとした半導体材料を含む薄膜トランジスタ |
JP2007042690A (ja) * | 2005-07-29 | 2007-02-15 | Fujifilm Holdings Corp | ナノ粒子分散液、それを用いた半導体デバイスの製造方法及び半導体デバイス |
JP2008111187A (ja) * | 2006-10-30 | 2008-05-15 | Samsung Electronics Co Ltd | ナノ粒子の分散方法及びこれを用いたナノ粒子薄膜の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2321373A1 (de) | 2011-05-18 |
CN102144004B (zh) | 2014-11-26 |
JP5599797B2 (ja) | 2014-10-01 |
TWI488815B (zh) | 2015-06-21 |
US20110163278A1 (en) | 2011-07-07 |
TW201016614A (en) | 2010-05-01 |
US8734899B2 (en) | 2014-05-27 |
KR20110066162A (ko) | 2011-06-16 |
WO2010026102A1 (de) | 2010-03-11 |
CN102144004A (zh) | 2011-08-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5599797B2 (ja) | 変性された粒子、及びこれらを含む分散液 | |
TWI425689B (zh) | 導電體物件之製造方法 | |
Pasquarelli et al. | Solution processing of transparent conductors: from flask to film | |
RU2556102C2 (ru) | Оксид р-типа, получение оксидной композиции р-типа, способ получения оксида р-типа, полупроводниковый прибор, индикаторное устройство, аппаратура воспроизведения изображения и система | |
US7507618B2 (en) | Method for making electronic devices using metal oxide nanoparticles | |
JP5215158B2 (ja) | 無機結晶性配向膜及びその製造方法、半導体デバイス | |
JP5916761B2 (ja) | 金属酸化物薄膜およびナノ材料から誘導される金属複合薄膜の低温製造 | |
US9637828B2 (en) | Electrochemical method for synthesizing metal-containing particles and other objects | |
US8501595B2 (en) | Thin film containing nanocrystal particles and method for preparing the same | |
KR101719853B1 (ko) | 산화인듐 함유 층의 제조 방법, 상기 방법에 의해 제조된 산화인듐 함유 층 및 그의 용도 | |
US20070090346A1 (en) | Porous chalcogenide thin film, method for preparing the same and electronic device using the same | |
Huang et al. | Highly stable precursor solution containing ZnO nanoparticles for the preparation of ZnO thin film transistors | |
Ghafouri et al. | Photoluminescence investigation of crystalline undoped ZnO nanostructures constructed by RF sputtering | |
KR101333316B1 (ko) | 금속산화물 박막 및 그 제조 방법, 금속산화물 박막용 용액 | |
US8691168B2 (en) | Process for preparing a zinc complex in solution | |
US9978591B2 (en) | Formulations comprising ammoniacal hydroxozinc compounds | |
Han et al. | Effect of annealing temperature on the conduction mechanism for a sol–gel driven ZnO Schottky diode | |
Young et al. | Mg doping effect on the microstructural and optical properties of ZnO nanocrystalline films | |
JP4973050B2 (ja) | 複合酸化物の結晶微粒子膜の製造方法 | |
Sarjidan et al. | Tunable optoelectronic properties of sol–gel derived ZnO nanostructure thin film by annealing treatment | |
TWI657586B (zh) | 半導體膜,及使用該半導體膜之半導體元件,以及分散液 | |
JP6291311B2 (ja) | 酸化物粒子及びその製造方法、薄膜の製造方法 | |
JP2011077324A (ja) | 半導体膜の製造方法及びその方法により得られた半導体膜を有する半導体基板 | |
Sarjidan et al. | Materials Express | |
Ramadas et al. | STRUCTURAL AND OPTICAL CHARACTERIZ BY SOL-GEL DI |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120823 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120823 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130606 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130611 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130819 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130826 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131206 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140204 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140428 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140805 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140813 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5599797 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |