JP5249021B2 - 亜鉛酸化物をベースとした半導体材料を含む薄膜トランジスタ - Google Patents
亜鉛酸化物をベースとした半導体材料を含む薄膜トランジスタ Download PDFInfo
- Publication number
- JP5249021B2 JP5249021B2 JP2008516907A JP2008516907A JP5249021B2 JP 5249021 B2 JP5249021 B2 JP 5249021B2 JP 2008516907 A JP2008516907 A JP 2008516907A JP 2008516907 A JP2008516907 A JP 2008516907A JP 5249021 B2 JP5249021 B2 JP 5249021B2
- Authority
- JP
- Japan
- Prior art keywords
- zinc oxide
- semiconductor
- transistor
- thin film
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims description 182
- 239000004065 semiconductor Substances 0.000 title claims description 134
- 239000011787 zinc oxide Substances 0.000 title claims description 91
- 239000000463 material Substances 0.000 title claims description 66
- 239000010409 thin film Substances 0.000 title claims description 63
- 239000010408 film Substances 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 45
- 239000002105 nanoparticle Substances 0.000 claims description 41
- 238000000576 coating method Methods 0.000 claims description 36
- 239000011248 coating agent Substances 0.000 claims description 34
- 238000000151 deposition Methods 0.000 claims description 34
- 239000002243 precursor Substances 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 26
- 238000000137 annealing Methods 0.000 claims description 21
- 239000002131 composite material Substances 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 6
- 239000011164 primary particle Substances 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 4
- 239000007772 electrode material Substances 0.000 claims description 3
- 235000014692 zinc oxide Nutrition 0.000 description 81
- 239000000243 solution Substances 0.000 description 52
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 36
- 230000037230 mobility Effects 0.000 description 20
- 238000004528 spin coating Methods 0.000 description 20
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 17
- 239000004246 zinc acetate Substances 0.000 description 17
- 229910052782 aluminium Inorganic materials 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- 230000008021 deposition Effects 0.000 description 11
- 230000005669 field effect Effects 0.000 description 11
- 239000011159 matrix material Substances 0.000 description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 238000000059 patterning Methods 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 239000004793 Polystyrene Substances 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 229920002223 polystyrene Polymers 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- 238000007641 inkjet printing Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- -1 polyethylene terephthalate Polymers 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229920005570 flexible polymer Polymers 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229920000144 PEDOT:PSS Polymers 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000007865 diluting Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- 229920002530 polyetherether ketone Polymers 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229940072919 cartia Drugs 0.000 description 2
- 238000005119 centrifugation Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 239000011151 fibre-reinforced plastic Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 2
- 150000004677 hydrates Chemical class 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 238000000813 microcontact printing Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000013557 residual solvent Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- MTLMVEWEYZFYTH-UHFFFAOYSA-N 1,3,5-trichloro-2-phenylbenzene Chemical compound ClC1=CC(Cl)=CC(Cl)=C1C1=CC=CC=C1 MTLMVEWEYZFYTH-UHFFFAOYSA-N 0.000 description 1
- OHVLMTFVQDZYHP-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CN1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O OHVLMTFVQDZYHP-UHFFFAOYSA-N 0.000 description 1
- IGGDKDTUCAWDAN-UHFFFAOYSA-N 1-vinylnaphthalene Chemical compound C1=CC=C2C(C=C)=CC=CC2=C1 IGGDKDTUCAWDAN-UHFFFAOYSA-N 0.000 description 1
- ZYZYQCACSQDPSB-UHFFFAOYSA-N 12,15-dioxatricyclo[8.6.0.02,7]hexadeca-1(10),2,4,6,8-pentaene-11,16-dione Chemical compound O=C1OCCOC(=O)C2=C1C=CC1=CC=CC=C21 ZYZYQCACSQDPSB-UHFFFAOYSA-N 0.000 description 1
- IHCCLXNEEPMSIO-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 IHCCLXNEEPMSIO-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- LLLVZDVNHNWSDS-UHFFFAOYSA-N 4-methylidene-3,5-dioxabicyclo[5.2.2]undeca-1(9),7,10-triene-2,6-dione Chemical compound C1(C2=CC=C(C(=O)OC(=C)O1)C=C2)=O LLLVZDVNHNWSDS-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- GBUDUCWUAWUSEV-UHFFFAOYSA-K [B+3].CC([O-])=O.CC([O-])=O.CC([O-])=O Chemical compound [B+3].CC([O-])=O.CC([O-])=O.CC([O-])=O GBUDUCWUAWUSEV-UHFFFAOYSA-K 0.000 description 1
- COXUNHIKBNZLLM-UHFFFAOYSA-H [B+3].[B+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O Chemical compound [B+3].[B+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O COXUNHIKBNZLLM-UHFFFAOYSA-H 0.000 description 1
- XWROSHJVVFETLV-UHFFFAOYSA-N [B+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O Chemical compound [B+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XWROSHJVVFETLV-UHFFFAOYSA-N 0.000 description 1
- HGBJDVIOLUMVIS-UHFFFAOYSA-N [Co]=O.[Na] Chemical compound [Co]=O.[Na] HGBJDVIOLUMVIS-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- HDYRYUINDGQKMC-UHFFFAOYSA-M acetyloxyaluminum;dihydrate Chemical compound O.O.CC(=O)O[Al] HDYRYUINDGQKMC-UHFFFAOYSA-M 0.000 description 1
- MJWPFSQVORELDX-UHFFFAOYSA-K aluminium formate Chemical compound [Al+3].[O-]C=O.[O-]C=O.[O-]C=O MJWPFSQVORELDX-UHFFFAOYSA-K 0.000 description 1
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 description 1
- 229940009827 aluminum acetate Drugs 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910021523 barium zirconate Inorganic materials 0.000 description 1
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- FYWVTSQYJIPZLW-UHFFFAOYSA-K diacetyloxygallanyl acetate Chemical compound [Ga+3].CC([O-])=O.CC([O-])=O.CC([O-])=O FYWVTSQYJIPZLW-UHFFFAOYSA-K 0.000 description 1
- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical compound [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- YYWZDUOROCFDRR-UHFFFAOYSA-N diformyloxyboranyl formate Chemical compound O=COB(OC=O)OC=O YYWZDUOROCFDRR-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007765 extrusion coating Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229940044658 gallium nitrate Drugs 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 229910000337 indium(III) sulfate Inorganic materials 0.000 description 1
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- XGCKLPDYTQRDTR-UHFFFAOYSA-H indium(iii) sulfate Chemical compound [In+3].[In+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O XGCKLPDYTQRDTR-UHFFFAOYSA-H 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910001410 inorganic ion Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001540 jet deposition Methods 0.000 description 1
- 238000012417 linear regression Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000382 optic material Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000636 poly(norbornene) polymer Polymers 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001470 polyketone Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- SRWMQSFFRFWREA-UHFFFAOYSA-M zinc formate Chemical compound [Zn+2].[O-]C=O SRWMQSFFRFWREA-UHFFFAOYSA-M 0.000 description 1
- UGZADUVQMDAIAO-UHFFFAOYSA-L zinc hydroxide Chemical compound [OH-].[OH-].[Zn+2] UGZADUVQMDAIAO-UHFFFAOYSA-L 0.000 description 1
- 229940007718 zinc hydroxide Drugs 0.000 description 1
- 229910021511 zinc hydroxide Inorganic materials 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
- NHXVNEDMKGDNPR-UHFFFAOYSA-N zinc;pentane-2,4-dione Chemical compound [Zn+2].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O NHXVNEDMKGDNPR-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02469—Group 12/16 materials
- H01L21/02472—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
(a)亜鉛酸化物をベースとしていて一次粒子の平均サイズが5〜200nmであるナノ粒子のコロイド溶液を含む種コーティングを基板に付着させるステップと;
(b)その種コーティングを乾燥させて亜鉛酸化物をベースとしたナノ粒子からなる多孔層を形成するステップと;
(c)場合によっては、亜鉛酸化物をベースとしたナノ粒子からなるその多孔層をステップ(a)または(b)よりも高温にてアニーリングするステップと;
(d)アニーリングによって亜鉛酸化物に変換される可溶性亜鉛酸化物前駆体化合物を含む被覆溶液をナノ粒子からなる多孔層の上に付着させて中間複合体膜を形成するステップと;
(e)その中間複合体膜を乾燥させるステップと;
(f)乾燥したその中間複合体膜を少なくとも50℃の温度にてアニールして、亜鉛酸化物をベースとしたナノ粒子を含むとともに、複合体膜のアニーリング中に亜鉛酸化物前駆体化合物が変換されることによって形成される追加の亜鉛酸化物材料が含まれた半導体膜を生成させるステップを含んでいる。
(a)亜鉛酸化物をベースとしていて一次粒子の平均サイズが5〜200nmであるナノ粒子のコロイド溶液を含む種コーティングを基板に付着させるステップと;
(b)その種コーティングを乾燥させて亜鉛酸化物をベースとしたナノ粒子からなる多孔層を形成するステップと;
(c)場合によっては、亜鉛酸化物をベースとしたナノ粒子からなるその多孔層をステップ(a)または(b)よりも高温の50〜500℃、好ましくは100〜250℃の温度にてアニーリングするステップと;
(d)アニーリングによって亜鉛酸化物に変換される可溶性亜鉛酸化物前駆体化合物を含む被覆溶液をナノ粒子からなる上記多孔層の上に付着させて中間複合体膜を形成するステップと;
(e)その中間複合体膜を乾燥させるステップと;
(f)乾燥したその中間複合体膜を少なくとも50℃の温度、好ましくは500℃までの温度にてアニールして、亜鉛酸化物をベースとしたナノ粒子を含むとともに、上記複合体膜のアニーリング中に上記亜鉛酸化物前駆体化合物が変換されることによって形成される追加の亜鉛酸化物材料が含まれた半導体膜を生成させるステップを含む方法が含まれる。
Id = (W/2L)×μC (Vg - Vth)2
ただしIdは飽和ソース-ドレイン電流であり、Cは絶縁層に付随する幾何学的なゲート・キャパシタンスであり、WとLはデバイスの物理的サイズであり、μは、亜鉛酸化物をベースとした半導体の中でのキャリア(正孔または電子)の易動度であり、Vgは印加されたゲート電圧であり、Vthは閾値電圧である。理想的には、適切な極性のゲート電圧が印加されたときだけTFTは電流を流すことができる。しかしゲート電圧がゼロのとき、ソースとドレインの間の“オフ”電流は、亜鉛酸化物をベースとした半導体の固有導電率σ:
σ = nqμ
に依存することになろう。ただしnは電荷キャリア密度であり、qは電荷であり、
Vg = 0においてIsd = σ(Wt/L) Vsd
となっている。ただしtは亜鉛酸化物をベースとした半導体層の厚さであり、Vsdはソースとドレインの間に印加される電圧である。したがってTHTが例えばディスプレイにおいてオン/オフ電流比の大きな優れた電子式スイッチとして動作するには、半導体が大きなキャリア易動度を持つが固有導電率は非常に小さいこと、あるいはそれと同じことだが、電荷キャリア密度が小さいことが必要とされる。実際のデバイスではオン/オフ比が104を超えることが望ましい。
Id = (W/2L)×μCox (Vg - Vth)2
ただしWとLはそれぞれチャネル幅とチャネル長であり、Coxは酸化物層のキャパシタンスである。このキャパシタンスは、酸化物の厚さと誘電定数の関数である。この式があるため、飽和電界効果易動度は、Id 1/2をVgに対してプロットした曲線の直線部分に直線をフィットすることによって求めた。閾値電圧Vthは、この直線フィットのx切片である。
上記の種組成物SLF-1をエタノールの中で1.3%に希釈することによってコーティング溶液を調製した。この溶液を2000rpmの速度でスピン・コーティングすることによって基板に付着させた。スピン・コーティングの後、サンプルを乾燥した空気の中で200℃の温度にて10分間にわたってアニールした。アニーリングの後、以下の表に示す濃度(サンプル1-1と1-2)でメタノールに溶かした酢酸亜鉛からなる前駆体層を2000rpmにて基板にスピン・コーティングした。このメタノール溶液には痕跡レベルの水が含まれていてもよい。次にこの層を乾燥した大気中で200℃にて10分間にわたってアニールした。このプロセスの後、アルミニウム接点を蒸着によって付着させた。
上記の種組成物SLF-1をエタノールの中で1.3%に希釈することによって別のコーティング溶液を調製した。この溶液を2000rpmの速度でスピン・コーティングすることによって基板に付着させた。スピン・コーティングの後、サンプルを乾燥した空気の中で200℃の温度にて10分間にわたってアニールした。
この実施例では、種用のZnOナノ粒子と前駆体を順番にインクジェット印刷することによって亜鉛酸化物膜を付着させられることを示す。X-Y並進ステージに支持されているサンプル・テーブルと、Z並進ステージに支持されている圧電デマンド-モードのプリントヘッドと、これらの部品を制御するソフトウエアとからなるシステムを用いてインクジェット印刷の実験を行なった。このインクジェット・システムのプリントヘッドは、20〜60ピコリットルの範囲の液滴を供給するのに適している。印刷する約2ccの流体をサンプル・カートリッジの中に入れた後、印刷用固定構造にねじ込む。加圧した窒素を用いてプリントヘッドにインクを注入した。Tencor粗面計を用い、一連の較正サンプルについて印刷された膜の厚さを測定した。放出される液滴の数、インクの濃度、印刷された膜の厚さに関する単純なモデルで最適フィット直線回帰を利用し、液滴の体積を38ピコリットルと計算した。
この実施例では、コーティングの順番を逆にすることの効果を示す。本発明のサンプルでは、上記の種組成物SLF-1をエタノールの中で1.1%に希釈することによってコーティング溶液を調製した。この溶液を2000rpmの速度でスピン・コーティングすることによって基板に付着させた。スピン・コーティングの後、サンプルを乾燥した空気の中で200℃の温度にて10分間にわたってアニールした。
28 基板
30 ドレイン電極
44 ゲート電極
56 ゲート誘電体
70 半導体
100 トランジスタ
102 LCD画素
104 トランジスタ/画素セル
106 列またはデータ線
108 行または制御線
Claims (4)
- トランジスタで利用するため亜鉛酸化物をベースとした薄膜半導体を製造する方法であって、
(a)亜鉛酸化物をベースとしていて一次粒子の平均サイズが5〜200nmであるナノ粒子のコロイド溶液を含む種コーティングを基板に付着させるステップと;
(b)その種コーティングを乾燥させて亜鉛酸化物をベースとしたナノ粒子からなる多孔層を形成するステップと;
(d)アニーリングによって亜鉛酸化物に変換される可溶性亜鉛酸化物前駆体化合物を含む被覆溶液をナノ粒子からなる上記多孔層の上に付着させて中間複合体膜を形成するステップと;
(e)その中間複合体膜を乾燥させるステップと;
(f)乾燥したその中間複合体膜を少なくとも50℃の温度にてアニールして、亜鉛酸化物をベースとしたナノ粒子を含むとともに、上記複合体膜のアニーリング中に上記亜鉛酸化物前駆体化合物が変換されることによって形成される追加の亜鉛酸化物材料が含まれた半導体膜を生成させるステップを含む方法。 - 上記ステップ(b)の後に、
(c)亜鉛酸化物をベースとしたナノ粒子からなる上記多孔層を、ステップ(a)または(b)よりも高温にてアニーリングするステップ
を含む、請求項1に記載の方法。 - 亜鉛酸化物をベースとしたナノ粒子の上記コロイド溶液を第1の温度で基板に付着させ、次いでステップ(c)においてそれよりも高い50〜500℃の温度でアニールした後、上記被覆溶液を付着させる、請求項2に記載の方法。
- 必ずしも以下の順番でなくてもよいが、
(a)基板を用意するステップと;
(b)その基板の上にゲート電極材料を供給するステップと;
(c)そのゲート電極材料の上に誘電体層を設けるステップと;
(d)そのゲート誘電体層の上に上記半導体膜を形成するステップと;
(e)その半導体膜と接触するソース電極とドレイン電極を設けるステップを含む、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/155,436 US7691666B2 (en) | 2005-06-16 | 2005-06-16 | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US11/155,436 | 2005-06-16 | ||
PCT/US2006/021334 WO2006138071A1 (en) | 2005-06-16 | 2006-06-01 | Thin film transistors comprising zinc-oxide-based semiconductor materials |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008547195A JP2008547195A (ja) | 2008-12-25 |
JP2008547195A5 JP2008547195A5 (ja) | 2009-07-23 |
JP5249021B2 true JP5249021B2 (ja) | 2013-07-31 |
Family
ID=37054730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008516907A Expired - Fee Related JP5249021B2 (ja) | 2005-06-16 | 2006-06-01 | 亜鉛酸化物をベースとした半導体材料を含む薄膜トランジスタ |
Country Status (4)
Country | Link |
---|---|
US (2) | US7691666B2 (ja) |
EP (1) | EP1891666A1 (ja) |
JP (1) | JP5249021B2 (ja) |
WO (1) | WO2006138071A1 (ja) |
Families Citing this family (1867)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7608531B2 (en) | 2005-01-28 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
TWI505473B (zh) | 2005-01-28 | 2015-10-21 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7858451B2 (en) * | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US7928938B2 (en) * | 2005-04-19 | 2011-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including memory circuit, display device and electronic apparatus |
US8629819B2 (en) | 2005-07-14 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
EP1998373A3 (en) | 2005-09-29 | 2012-10-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
DE102005048774B4 (de) * | 2005-10-07 | 2009-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Substrat, das zumindest bereichsweise an einer Oberfläche mit einer Beschichtung eines Metalls versehen ist, sowie dessen Verwendung |
CN101278403B (zh) | 2005-10-14 | 2010-12-01 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
CN101577281B (zh) | 2005-11-15 | 2012-01-11 | 株式会社半导体能源研究所 | 有源矩阵显示器及包含该显示器的电视机 |
US8097877B2 (en) | 2005-12-20 | 2012-01-17 | Northwestern University | Inorganic-organic hybrid thin-film transistors using inorganic semiconducting films |
TWI304620B (en) * | 2006-01-20 | 2008-12-21 | Ind Tech Res Inst | Dielectric layer, composition and method for forming the same |
US8138075B1 (en) | 2006-02-06 | 2012-03-20 | Eberlein Dietmar C | Systems and methods for the manufacture of flat panel devices |
EP2924498A1 (en) | 2006-04-06 | 2015-09-30 | Semiconductor Energy Laboratory Co, Ltd. | Liquid crystal desplay device, semiconductor device, and electronic appliance |
WO2007118204A2 (en) * | 2006-04-06 | 2007-10-18 | Applied Materials, Inc. | Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates |
US8029852B2 (en) * | 2006-07-31 | 2011-10-04 | Hewlett-Packard Development Company, L.P. | Contact printing oxide-based electrically active micro-features |
TWI312580B (en) * | 2006-09-04 | 2009-07-21 | Taiwan Tft Lcd Associatio | A thin film transistor, manufacturing method of a active layer thereof and liquid crystal display |
JP5116277B2 (ja) | 2006-09-29 | 2013-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器 |
US7646015B2 (en) | 2006-10-31 | 2010-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device and semiconductor device |
DE102007018431A1 (de) * | 2007-04-19 | 2008-10-30 | Evonik Degussa Gmbh | Pyrogenes Zinkoxid enthaltender Verbund von Schichten und diesen Verbund aufweisender Feldeffekttransistor |
US7927713B2 (en) | 2007-04-27 | 2011-04-19 | Applied Materials, Inc. | Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases |
JP5542297B2 (ja) | 2007-05-17 | 2014-07-09 | 株式会社半導体エネルギー研究所 | 液晶表示装置、表示モジュール及び電子機器 |
JP4989309B2 (ja) | 2007-05-18 | 2012-08-01 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
CN101681928B (zh) * | 2007-05-31 | 2012-08-29 | 佳能株式会社 | 使用氧化物半导体的薄膜晶体管的制造方法 |
US20080299771A1 (en) * | 2007-06-04 | 2008-12-04 | Irving Lyn M | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US20080303037A1 (en) * | 2007-06-04 | 2008-12-11 | Irving Lyn M | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US8354674B2 (en) | 2007-06-29 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer |
DE102007043920A1 (de) | 2007-07-17 | 2009-01-22 | Merck Patent Gmbh | Funktionelles Material für gedruckte elektronische Bauteile |
WO2009014155A1 (en) | 2007-07-25 | 2009-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and electronic device having the same |
KR101352246B1 (ko) * | 2007-07-31 | 2014-01-17 | 삼성전자주식회사 | 산화아연 박막의 제조방법 |
EP2183780A4 (en) * | 2007-08-02 | 2010-07-28 | Applied Materials Inc | THIN FILM TRANSISTORS USING THIN FILM SEMICONDUCTOR MATERIALS |
JP2009040640A (ja) * | 2007-08-09 | 2009-02-26 | Andes Denki Kk | 酸化亜鉛薄膜の製造方法 |
DE102007043360A1 (de) * | 2007-09-12 | 2009-03-19 | Forschungszentrum Karlsruhe Gmbh | Elektronisches Bauelement, Verfahren zu seiner Herstellung und seine Verwendung |
US7972898B2 (en) * | 2007-09-26 | 2011-07-05 | Eastman Kodak Company | Process for making doped zinc oxide |
KR101407298B1 (ko) | 2007-11-08 | 2014-06-13 | 연세대학교 산학협력단 | 반도체액 조성물 및 그의 제조 방법 |
NO332409B1 (no) * | 2008-01-24 | 2012-09-17 | Well Technology As | Anordning og fremgangsmate for a isolere en seksjon av et bronnhull |
US11227315B2 (en) | 2008-01-30 | 2022-01-18 | Aibuy, Inc. | Interactive product placement system and method therefor |
US8312486B1 (en) | 2008-01-30 | 2012-11-13 | Cinsay, Inc. | Interactive product placement system and method therefor |
US20110191809A1 (en) | 2008-01-30 | 2011-08-04 | Cinsay, Llc | Viral Syndicated Interactive Product System and Method Therefor |
US8017458B2 (en) * | 2008-01-31 | 2011-09-13 | Northwestern University | Solution-processed high mobility inorganic thin-film transistors |
KR101424816B1 (ko) * | 2008-02-18 | 2014-07-31 | 삼성전자주식회사 | 나노와이어를 포함하는 박막 트랜지스터 및 그의 제조방법 |
GB0803702D0 (en) | 2008-02-28 | 2008-04-09 | Isis Innovation | Transparent conducting oxides |
US8980066B2 (en) * | 2008-03-14 | 2015-03-17 | Applied Materials, Inc. | Thin film metal oxynitride semiconductors |
WO2009117438A2 (en) * | 2008-03-20 | 2009-09-24 | Applied Materials, Inc. | Process to make metal oxide thin film transistor array with etch stopping layer |
US7923368B2 (en) * | 2008-04-25 | 2011-04-12 | Innovalight, Inc. | Junction formation on wafer substrates using group IV nanoparticles |
US9113214B2 (en) | 2008-05-03 | 2015-08-18 | Cinsay, Inc. | Method and system for generation and playback of supplemented videos |
US9041202B2 (en) | 2008-05-16 | 2015-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
US8314765B2 (en) | 2008-06-17 | 2012-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit, display device, and electronic device |
JP2010010175A (ja) * | 2008-06-24 | 2010-01-14 | Konica Minolta Holdings Inc | 薄膜トランジスタおよび薄膜トランジスタの製造方法 |
JP2010010549A (ja) * | 2008-06-30 | 2010-01-14 | Konica Minolta Holdings Inc | 薄膜トランジスタの製造方法及び薄膜トランジスタ |
JP2010016037A (ja) * | 2008-07-01 | 2010-01-21 | Konica Minolta Holdings Inc | 薄膜トランジスタの製造方法 |
US8258511B2 (en) * | 2008-07-02 | 2012-09-04 | Applied Materials, Inc. | Thin film transistors using multiple active channel layers |
KR102267235B1 (ko) | 2008-07-10 | 2021-06-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 및 전자기기 |
CN102099297B (zh) | 2008-07-18 | 2015-02-25 | 巴斯夫欧洲公司 | 改性氧化锌颗粒 |
TWI500159B (zh) | 2008-07-31 | 2015-09-11 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
US9666719B2 (en) | 2008-07-31 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
TWI495108B (zh) | 2008-07-31 | 2015-08-01 | Semiconductor Energy Lab | 半導體裝置的製造方法 |
JP2010056541A (ja) | 2008-07-31 | 2010-03-11 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
TWI834207B (zh) | 2008-07-31 | 2024-03-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
TWI642113B (zh) | 2008-08-08 | 2018-11-21 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
JP5608347B2 (ja) | 2008-08-08 | 2014-10-15 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
JP5480554B2 (ja) | 2008-08-08 | 2014-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI508282B (zh) | 2008-08-08 | 2015-11-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
JP5525778B2 (ja) | 2008-08-08 | 2014-06-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9082857B2 (en) | 2008-09-01 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an oxide semiconductor layer |
TWI606592B (zh) | 2008-09-01 | 2017-11-21 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
JP5627071B2 (ja) | 2008-09-01 | 2014-11-19 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
WO2010026102A1 (de) * | 2008-09-04 | 2010-03-11 | Basf Se | Modifizierte partikel und diese enthaltende dispersionen |
WO2010029865A1 (en) | 2008-09-12 | 2010-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR101665734B1 (ko) | 2008-09-12 | 2016-10-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 생산 방법 |
KR101623224B1 (ko) * | 2008-09-12 | 2016-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제조 방법 |
KR20110056542A (ko) | 2008-09-12 | 2011-05-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR101803264B1 (ko) | 2008-09-19 | 2017-12-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR102275487B1 (ko) | 2008-09-19 | 2021-07-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
WO2010032640A1 (en) * | 2008-09-19 | 2010-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR101622978B1 (ko) | 2008-09-19 | 2016-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
KR101507324B1 (ko) | 2008-09-19 | 2015-03-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
WO2010039842A1 (en) * | 2008-09-30 | 2010-04-08 | Ixys Corporation | Insulated gate bipolar transistor |
WO2010038599A1 (en) | 2008-10-01 | 2010-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR101623958B1 (ko) * | 2008-10-01 | 2016-05-25 | 삼성전자주식회사 | 인버터 및 그의 동작방법과 인버터를 포함하는 논리회로 |
EP2172804B1 (en) | 2008-10-03 | 2016-05-11 | Semiconductor Energy Laboratory Co, Ltd. | Display device |
WO2010038820A1 (en) | 2008-10-03 | 2010-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR101761108B1 (ko) | 2008-10-03 | 2017-07-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
EP2172977A1 (en) | 2008-10-03 | 2010-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
CN103928476A (zh) * | 2008-10-03 | 2014-07-16 | 株式会社半导体能源研究所 | 显示装置及其制造方法 |
CN101719493B (zh) | 2008-10-08 | 2014-05-14 | 株式会社半导体能源研究所 | 显示装置 |
JP5484853B2 (ja) | 2008-10-10 | 2014-05-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR101799601B1 (ko) | 2008-10-16 | 2017-11-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 표시 장치 |
JP5361651B2 (ja) * | 2008-10-22 | 2013-12-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR102251817B1 (ko) | 2008-10-24 | 2021-05-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
EP2180518B1 (en) | 2008-10-24 | 2018-04-25 | Semiconductor Energy Laboratory Co, Ltd. | Method for manufacturing semiconductor device |
JP5616012B2 (ja) | 2008-10-24 | 2014-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8741702B2 (en) | 2008-10-24 | 2014-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
KR101667909B1 (ko) | 2008-10-24 | 2016-10-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치의 제조방법 |
JP5442234B2 (ja) | 2008-10-24 | 2014-03-12 | 株式会社半導体エネルギー研究所 | 半導体装置及び表示装置 |
US8106400B2 (en) | 2008-10-24 | 2012-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2010047288A1 (en) | 2008-10-24 | 2010-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductordevice |
TWI633605B (zh) | 2008-10-31 | 2018-08-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
KR101603303B1 (ko) | 2008-10-31 | 2016-03-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 도전성 산질화물 및 도전성 산질화물막의 제작 방법 |
KR101631454B1 (ko) | 2008-10-31 | 2016-06-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 논리회로 |
KR101634411B1 (ko) | 2008-10-31 | 2016-06-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 구동 회로, 표시 장치 및 전자 장치 |
TWI487104B (zh) | 2008-11-07 | 2015-06-01 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
CN101740631B (zh) | 2008-11-07 | 2014-07-16 | 株式会社半导体能源研究所 | 半导体装置及该半导体装置的制造方法 |
TWI467663B (zh) * | 2008-11-07 | 2015-01-01 | Semiconductor Energy Lab | 半導體裝置和該半導體裝置的製造方法 |
TWI831050B (zh) | 2008-11-07 | 2024-02-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
EP2184783B1 (en) | 2008-11-07 | 2012-10-03 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and method for manufacturing the same |
KR20130138352A (ko) * | 2008-11-07 | 2013-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101432764B1 (ko) | 2008-11-13 | 2014-08-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치의 제조방법 |
TWI656645B (zh) | 2008-11-13 | 2019-04-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
US8232947B2 (en) | 2008-11-14 | 2012-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
JP2010153802A (ja) | 2008-11-20 | 2010-07-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
KR101291384B1 (ko) | 2008-11-21 | 2013-07-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
TWI654754B (zh) | 2008-11-28 | 2019-03-21 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置 |
TWI585955B (zh) | 2008-11-28 | 2017-06-01 | 半導體能源研究所股份有限公司 | 光感測器及顯示裝置 |
TWI606593B (zh) | 2008-11-28 | 2017-11-21 | 半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
KR101643204B1 (ko) | 2008-12-01 | 2016-07-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
TWI633371B (zh) | 2008-12-03 | 2018-08-21 | 半導體能源研究所股份有限公司 | 液晶顯示裝置 |
US20100144088A1 (en) * | 2008-12-05 | 2010-06-10 | Electronics And Telecommunications Research Institute | Method for forming metal oxide and method for forming transistor structure with the same |
JP5491833B2 (ja) | 2008-12-05 | 2014-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2010071183A1 (en) | 2008-12-19 | 2010-06-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
KR101642384B1 (ko) | 2008-12-19 | 2016-07-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터의 제작 방법 |
KR20100075026A (ko) * | 2008-12-24 | 2010-07-02 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
EP2202802B1 (en) | 2008-12-24 | 2012-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit and semiconductor device |
US8383470B2 (en) | 2008-12-25 | 2013-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor (TFT) having a protective layer and manufacturing method thereof |
US8114720B2 (en) | 2008-12-25 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8441007B2 (en) | 2008-12-25 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
TWI501319B (zh) * | 2008-12-26 | 2015-09-21 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
US8330156B2 (en) * | 2008-12-26 | 2012-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with a plurality of oxide clusters over the gate insulating layer |
US20100163861A1 (en) * | 2008-12-29 | 2010-07-01 | Motorola, Inc. | Method and apparatus for optically transparent transistor |
KR101648927B1 (ko) | 2009-01-16 | 2016-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
US8492756B2 (en) | 2009-01-23 | 2013-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8436350B2 (en) * | 2009-01-30 | 2013-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device using an oxide semiconductor with a plurality of metal clusters |
US8367486B2 (en) | 2009-02-05 | 2013-02-05 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and method for manufacturing the transistor |
US8174021B2 (en) | 2009-02-06 | 2012-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the semiconductor device |
US8749930B2 (en) | 2009-02-09 | 2014-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Protection circuit, semiconductor device, photoelectric conversion device, and electronic device |
US8278657B2 (en) | 2009-02-13 | 2012-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device |
CN101840936B (zh) | 2009-02-13 | 2014-10-08 | 株式会社半导体能源研究所 | 包括晶体管的半导体装置及其制造方法 |
US8247812B2 (en) | 2009-02-13 | 2012-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device |
US8247276B2 (en) | 2009-02-20 | 2012-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, method for manufacturing the same, and semiconductor device |
US8841661B2 (en) | 2009-02-25 | 2014-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof |
US8704216B2 (en) | 2009-02-27 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20100224878A1 (en) | 2009-03-05 | 2010-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8461582B2 (en) | 2009-03-05 | 2013-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR101671210B1 (ko) | 2009-03-06 | 2016-11-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR102391280B1 (ko) | 2009-03-12 | 2022-04-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
TWI485781B (zh) | 2009-03-13 | 2015-05-21 | Semiconductor Energy Lab | 半導體裝置及該半導體裝置的製造方法 |
US8450144B2 (en) * | 2009-03-26 | 2013-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR101681884B1 (ko) | 2009-03-27 | 2016-12-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치, 표시장치 및 전자기기 |
TWI511288B (zh) | 2009-03-27 | 2015-12-01 | Semiconductor Energy Lab | 半導體裝置 |
KR101752640B1 (ko) | 2009-03-27 | 2017-06-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
TWI485851B (zh) | 2009-03-30 | 2015-05-21 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
US8581247B2 (en) | 2009-03-31 | 2013-11-12 | Panasonic Corporation | Flexible semiconductor device having gate electrode disposed within an opening of a resin film |
US8338226B2 (en) | 2009-04-02 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
TWI489628B (zh) | 2009-04-02 | 2015-06-21 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
US8441047B2 (en) | 2009-04-10 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
TWI476917B (zh) | 2009-04-16 | 2015-03-11 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
US9401431B2 (en) * | 2009-04-21 | 2016-07-26 | Cbrite Inc. | Double self-aligned metal oxide TFT |
JP5640323B2 (ja) * | 2009-04-22 | 2014-12-17 | コニカミノルタ株式会社 | 金属酸化物半導体の製造方法、金属酸化物半導体および薄膜トランジスタ |
WO2010125011A2 (de) * | 2009-04-28 | 2010-11-04 | Basf Se | Verfahren zur herstellung von halbleitenden schichten |
WO2010125986A1 (en) * | 2009-05-01 | 2010-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8143778B2 (en) * | 2009-05-11 | 2012-03-27 | National Taiwan University | Organic-inorganic lighting device and a method for fabricating the same |
JP5751762B2 (ja) | 2009-05-21 | 2015-07-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP5564331B2 (ja) | 2009-05-29 | 2014-07-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
EP2256814B1 (en) | 2009-05-29 | 2019-01-16 | Semiconductor Energy Laboratory Co, Ltd. | Oxide semiconductor device and method for manufacturing the same |
EP2256795B1 (en) | 2009-05-29 | 2014-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for oxide semiconductor device |
EP2443650A1 (de) * | 2009-06-16 | 2012-04-25 | Basf Se | Thermolabile vorläufer-verbindungen zur verbesserung der interpartikulären kontaktstellen und zum auffüllen der zwischenräume in halbleitenden metalloxidpartikelschichten |
KR101810699B1 (ko) | 2009-06-30 | 2018-01-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작 방법 |
KR20120031026A (ko) | 2009-06-30 | 2012-03-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제조 방법 |
KR101915421B1 (ko) | 2009-06-30 | 2018-11-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제조 방법 |
EP2449595B1 (en) | 2009-06-30 | 2017-07-26 | Semiconductor Energy Laboratory Co, Ltd. | Method for manufacturing semiconductor device |
KR101610606B1 (ko) | 2009-07-03 | 2016-04-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
JP5663214B2 (ja) * | 2009-07-03 | 2015-02-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR101476817B1 (ko) | 2009-07-03 | 2014-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터를 갖는 표시 장치 및 그 제작 방법 |
KR101460868B1 (ko) | 2009-07-10 | 2014-11-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101643835B1 (ko) | 2009-07-10 | 2016-07-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
CN104835850B (zh) | 2009-07-10 | 2018-10-26 | 株式会社半导体能源研究所 | 半导体器件 |
WO2011007675A1 (en) | 2009-07-17 | 2011-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
TWI491308B (zh) * | 2009-07-17 | 2015-07-01 | Univ Nat Taiwan | 有機/無機白光發光元件及其製作方法 |
WO2011007682A1 (en) | 2009-07-17 | 2011-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
WO2011007677A1 (en) | 2009-07-17 | 2011-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR101870460B1 (ko) | 2009-07-18 | 2018-06-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제조 방법 |
CN102576732B (zh) | 2009-07-18 | 2015-02-25 | 株式会社半导体能源研究所 | 半导体装置与用于制造半导体装置的方法 |
WO2011010545A1 (en) | 2009-07-18 | 2011-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2011010541A1 (en) | 2009-07-18 | 2011-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2011010542A1 (en) | 2009-07-23 | 2011-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2011010546A1 (en) | 2009-07-24 | 2011-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2011013523A1 (en) | 2009-07-31 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2011013502A1 (en) * | 2009-07-31 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR102251729B1 (ko) | 2009-07-31 | 2021-05-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 디바이스 및 그 형성 방법 |
KR102215941B1 (ko) | 2009-07-31 | 2021-02-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
CN105097946B (zh) * | 2009-07-31 | 2018-05-08 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
JP5642447B2 (ja) | 2009-08-07 | 2014-12-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
EP2284891B1 (en) | 2009-08-07 | 2019-07-24 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and manufacturing method thereof |
TWI559501B (zh) | 2009-08-07 | 2016-11-21 | 半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
JP5663231B2 (ja) | 2009-08-07 | 2015-02-04 | 株式会社半導体エネルギー研究所 | 発光装置 |
TW202420563A (zh) | 2009-08-07 | 2024-05-16 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
TWI528527B (zh) | 2009-08-07 | 2016-04-01 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置之製造方法 |
TWI596741B (zh) | 2009-08-07 | 2017-08-21 | 半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
US8115883B2 (en) | 2009-08-27 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
WO2011027649A1 (en) * | 2009-09-02 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a transistor, and manufacturing method of semiconductor device |
GB0915376D0 (en) | 2009-09-03 | 2009-10-07 | Isis Innovation | Transparent conducting oxides |
CN105810753A (zh) | 2009-09-04 | 2016-07-27 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
WO2011027701A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
WO2011027676A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2011027702A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
WO2011027664A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
KR101988341B1 (ko) | 2009-09-04 | 2019-06-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 발광 장치를 제작하기 위한 방법 |
KR101746198B1 (ko) | 2009-09-04 | 2017-06-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 전자기기 |
KR101791812B1 (ko) | 2009-09-04 | 2017-10-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
WO2011027656A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and display device |
US9805641B2 (en) * | 2009-09-04 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the same |
CN105679766A (zh) | 2009-09-16 | 2016-06-15 | 株式会社半导体能源研究所 | 晶体管及显示设备 |
WO2011034012A1 (en) | 2009-09-16 | 2011-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit, light emitting device, semiconductor device, and electronic device |
KR101700470B1 (ko) * | 2009-09-16 | 2017-01-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 구동 회로, 구동 회로를 포함하는 표시 장치 및 표시 장치를 포함하는 전자 기기 |
KR101470811B1 (ko) | 2009-09-16 | 2014-12-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR102618171B1 (ko) | 2009-09-16 | 2023-12-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 이의 제조 방법 |
WO2011033914A1 (en) | 2009-09-16 | 2011-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of display device and display device |
US9715845B2 (en) | 2009-09-16 | 2017-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
KR101707260B1 (ko) | 2009-09-24 | 2017-02-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR102180761B1 (ko) | 2009-09-24 | 2020-11-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막 및 반도체 장치 |
CN102576677B (zh) | 2009-09-24 | 2015-07-22 | 株式会社半导体能源研究所 | 半导体元件及其制造方法 |
KR101713356B1 (ko) | 2009-09-24 | 2017-03-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 구동 회로, 상기 구동 회로를 포함하는 표시 장치, 및 상기 표시 장치를 포함하는 전자 기기 |
WO2011037008A1 (en) * | 2009-09-24 | 2011-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device |
TWI512997B (zh) | 2009-09-24 | 2015-12-11 | Semiconductor Energy Lab | 半導體裝置,電源電路,和半導體裝置的製造方法 |
WO2011037050A1 (en) | 2009-09-24 | 2011-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101470785B1 (ko) | 2009-09-24 | 2014-12-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제조 방법 |
CN102640294B (zh) | 2009-09-24 | 2014-12-17 | 应用材料公司 | 将湿式处理用于源极-漏极金属蚀刻从而制造金属氧化物或金属氮氧化物tft的方法 |
KR101740943B1 (ko) | 2009-09-24 | 2017-06-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
US8840763B2 (en) * | 2009-09-28 | 2014-09-23 | Applied Materials, Inc. | Methods for stable process in a reactive sputtering process using zinc or doped zinc target |
KR101883330B1 (ko) * | 2009-09-30 | 2018-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 레독스 커패시터 및 그 제작 방법 |
WO2011040213A1 (en) * | 2009-10-01 | 2011-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2011043163A1 (en) | 2009-10-05 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2011043182A1 (en) | 2009-10-05 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for removing electricity and method for manufacturing semiconductor device |
EP2486594B1 (en) | 2009-10-08 | 2017-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor device |
CN105185837B (zh) | 2009-10-08 | 2018-08-03 | 株式会社半导体能源研究所 | 半导体器件、显示装置和电子电器 |
EP2486569B1 (en) | 2009-10-09 | 2019-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Shift register and display device |
KR20120083341A (ko) | 2009-10-09 | 2012-07-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 액정 표시 장치를 포함하는 전자 기기 |
WO2011043195A1 (en) * | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102329380B1 (ko) * | 2009-10-09 | 2021-11-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2011043194A1 (en) | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN112242173B (zh) | 2009-10-09 | 2024-08-20 | 株式会社半导体能源研究所 | 半导体器件 |
KR101759504B1 (ko) | 2009-10-09 | 2017-07-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 표시 장치 및 이를 포함한 전자 기기 |
WO2011043164A1 (en) * | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
WO2011043162A1 (en) * | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
WO2011043206A1 (en) | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2011043170A1 (en) | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101680047B1 (ko) | 2009-10-14 | 2016-11-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
KR101915251B1 (ko) | 2009-10-16 | 2018-11-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2011046010A1 (en) | 2009-10-16 | 2011-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device including the liquid crystal display device |
KR102065330B1 (ko) | 2009-10-16 | 2020-01-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치의 제작 방법 |
KR101844080B1 (ko) | 2009-10-16 | 2018-03-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 이를 구비한 전자 장치 |
KR101745747B1 (ko) | 2009-10-16 | 2017-06-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 논리 회로 및 반도체 장치 |
KR101893128B1 (ko) | 2009-10-21 | 2018-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 아날로그 회로 및 반도체 장치 |
KR20170143023A (ko) | 2009-10-21 | 2017-12-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작방법 |
KR101751908B1 (ko) | 2009-10-21 | 2017-06-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전압 조정 회로 |
KR101490726B1 (ko) | 2009-10-21 | 2015-02-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2011048959A1 (en) * | 2009-10-21 | 2011-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2011048923A1 (en) | 2009-10-21 | 2011-04-28 | Semiconductor Energy Laboratory Co., Ltd. | E-book reader |
KR101582636B1 (ko) | 2009-10-21 | 2016-01-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 표시 장치를 갖는 전자 기기 |
WO2011048945A1 (en) | 2009-10-21 | 2011-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device including the same |
TWI467770B (zh) * | 2009-10-26 | 2015-01-01 | Prime View Int Co Ltd | 顯示器及其薄膜電晶體陣列基板與薄膜電晶體 |
WO2011052351A1 (en) | 2009-10-29 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
SG10201910510UA (en) | 2009-10-29 | 2020-01-30 | Semiconductor Energy Lab | Semiconductor device |
KR20120091243A (ko) * | 2009-10-30 | 2012-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2011052411A1 (en) * | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Transistor |
KR101740684B1 (ko) | 2009-10-30 | 2017-05-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 파워 다이오드, 정류기 및 그것을 가지는 반도체 장치 |
MY163862A (en) | 2009-10-30 | 2017-10-31 | Semiconductor Energy Lab | Logic circuit and semiconductor device |
WO2011052413A1 (en) | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Non-linear element, display device, and electronic device |
CN102484471B (zh) | 2009-10-30 | 2015-04-01 | 株式会社半导体能源研究所 | 驱动器电路、包括该驱动器电路的显示设备和包括该显示设备的电子设备 |
EP2494597A4 (en) | 2009-10-30 | 2015-03-18 | Semiconductor Energy Lab | SEMICONDUCTOR COMPONENT |
WO2011052366A1 (en) * | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Voltage regulator circuit |
WO2011052437A1 (en) | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Non-linear element, display device including non-linear element, and electronic device including display device |
CN102668096B (zh) | 2009-10-30 | 2015-04-29 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
WO2011052382A1 (en) * | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR20120099657A (ko) * | 2009-10-30 | 2012-09-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 |
EP2494599B1 (en) | 2009-10-30 | 2020-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2011052344A1 (en) | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, driving method of the same, and electronic appliance including the same |
US8614435B2 (en) * | 2009-11-03 | 2013-12-24 | International Business Machines Corporation | Utilization of organic buffer layer to fabricate high performance carbon nanoelectronic devices |
TWI426566B (zh) * | 2009-11-05 | 2014-02-11 | Univ Nat Taiwan | 薄膜電晶體與其製法 |
JP5539846B2 (ja) | 2009-11-06 | 2014-07-02 | 株式会社半導体エネルギー研究所 | 評価方法、半導体装置の作製方法 |
KR20190066086A (ko) | 2009-11-06 | 2019-06-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
CN102612749B (zh) | 2009-11-06 | 2015-04-01 | 株式会社半导体能源研究所 | 半导体器件 |
KR101750982B1 (ko) | 2009-11-06 | 2017-06-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
CN102612741B (zh) | 2009-11-06 | 2014-11-12 | 株式会社半导体能源研究所 | 半导体装置 |
KR101930230B1 (ko) | 2009-11-06 | 2018-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치를 제작하기 위한 방법 |
WO2011055668A1 (en) | 2009-11-06 | 2011-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102066532B1 (ko) | 2009-11-06 | 2020-01-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101645680B1 (ko) | 2009-11-06 | 2016-08-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101727469B1 (ko) | 2009-11-06 | 2017-04-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
WO2011055769A1 (en) * | 2009-11-06 | 2011-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor element and semiconductor device, and deposition apparatus |
KR101810254B1 (ko) | 2009-11-06 | 2017-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 동작 방법 |
CN102668097B (zh) | 2009-11-13 | 2015-08-12 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
CN102612714B (zh) | 2009-11-13 | 2016-06-29 | 株式会社半导体能源研究所 | 半导体器件及其驱动方法 |
KR101975741B1 (ko) * | 2009-11-13 | 2019-05-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 타깃 재료의 포장 방법 및 타깃의 장착 방법 |
WO2011058913A1 (en) * | 2009-11-13 | 2011-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101895561B1 (ko) | 2009-11-13 | 2018-09-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
KR20120094013A (ko) | 2009-11-13 | 2012-08-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 스퍼터링 타겟 및 그 제조방법, 및 트랜지스터 |
WO2011058852A1 (en) * | 2009-11-13 | 2011-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20180014255A (ko) | 2009-11-13 | 2018-02-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이 표시 장치를 구비한 전자 기기 |
WO2011058864A1 (en) * | 2009-11-13 | 2011-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Device including nonvolatile memory element |
WO2011062029A1 (en) | 2009-11-18 | 2011-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
CN102598266B (zh) * | 2009-11-20 | 2015-04-22 | 株式会社半导体能源研究所 | 半导体装置 |
KR102451852B1 (ko) | 2009-11-20 | 2022-10-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
CN102668063B (zh) * | 2009-11-20 | 2015-02-18 | 株式会社半导体能源研究所 | 半导体装置 |
CN103151266B (zh) | 2009-11-20 | 2016-08-03 | 株式会社半导体能源研究所 | 用于制造半导体器件的方法 |
KR101829176B1 (ko) | 2009-11-20 | 2018-02-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
MY166309A (en) | 2009-11-20 | 2018-06-25 | Semiconductor Energy Lab | Nonvolatile latch circuit and logic circuit, and semiconductor device using the same |
JP5762723B2 (ja) | 2009-11-20 | 2015-08-12 | 株式会社半導体エネルギー研究所 | 変調回路及びそれを備えた半導体装置 |
WO2011062048A1 (en) * | 2009-11-20 | 2011-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
KR20110056127A (ko) | 2009-11-20 | 2011-05-26 | 삼성전자주식회사 | 트랜지스터용 반도체 제조 방법 및 트랜지스터의 제조 방법 |
KR101800854B1 (ko) * | 2009-11-20 | 2017-11-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 |
KR101800852B1 (ko) | 2009-11-20 | 2017-12-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101662359B1 (ko) | 2009-11-24 | 2016-10-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 메모리 셀을 포함하는 반도체 장치 |
WO2011065258A1 (en) * | 2009-11-27 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20180059577A (ko) | 2009-11-27 | 2018-06-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2011065209A1 (en) * | 2009-11-27 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Non-linear element, display device including non-linear element, and electronic device including display device |
KR101802406B1 (ko) | 2009-11-27 | 2017-11-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작방법 |
KR101825345B1 (ko) | 2009-11-28 | 2018-02-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 적층 산화물 재료, 반도체 장치 및 반도체 장치의 제작 방법 |
WO2011065210A1 (en) | 2009-11-28 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device |
KR102304078B1 (ko) | 2009-11-28 | 2021-09-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
KR101520024B1 (ko) | 2009-11-28 | 2015-05-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
CN105739209B (zh) | 2009-11-30 | 2022-05-27 | 株式会社半导体能源研究所 | 液晶显示设备、用于驱动该液晶显示设备的方法 |
WO2011068025A1 (en) | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Dc converter circuit and power supply circuit |
KR101857693B1 (ko) * | 2009-12-04 | 2018-05-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
JP5584103B2 (ja) | 2009-12-04 | 2014-09-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR101840623B1 (ko) | 2009-12-04 | 2018-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이를 포함하는 전자 기기 |
JP2011139052A (ja) | 2009-12-04 | 2011-07-14 | Semiconductor Energy Lab Co Ltd | 半導体記憶装置 |
CN102648526B (zh) | 2009-12-04 | 2015-08-05 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
WO2011068028A1 (en) * | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element, semiconductor device, and method for manufacturing the same |
WO2011068016A1 (en) * | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR101800038B1 (ko) * | 2009-12-04 | 2017-11-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
CN104795323B (zh) | 2009-12-04 | 2017-12-29 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
WO2011068033A1 (en) | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2011068022A1 (en) | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102153034B1 (ko) | 2009-12-04 | 2020-09-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101615636B1 (ko) * | 2009-12-08 | 2016-04-27 | 삼성전자주식회사 | 트랜지스터 및 상기 트랜지스터를 포함한 전자 장치 |
KR20120106786A (ko) | 2009-12-08 | 2012-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
KR101945171B1 (ko) | 2009-12-08 | 2019-02-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101742777B1 (ko) | 2009-12-10 | 2017-06-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치의 구동 방법 및 표시 장치 |
WO2011070901A1 (en) | 2009-12-11 | 2011-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
CN104600105B (zh) | 2009-12-11 | 2018-05-08 | 株式会社半导体能源研究所 | 半导体装置 |
WO2011070929A1 (en) | 2009-12-11 | 2011-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
JP5727204B2 (ja) | 2009-12-11 | 2015-06-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR20170116239A (ko) | 2009-12-11 | 2017-10-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전계 효과 트랜지스터 |
CN104658598B (zh) | 2009-12-11 | 2017-08-11 | 株式会社半导体能源研究所 | 半导体器件、逻辑电路和cpu |
JP5185357B2 (ja) * | 2009-12-17 | 2013-04-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CN102725784B (zh) | 2009-12-18 | 2016-03-23 | 株式会社半导体能源研究所 | 具有光学传感器的显示设备及其驱动方法 |
WO2011073044A1 (de) * | 2009-12-18 | 2011-06-23 | Basf Se | Metalloxid-feldeffekttransistoren auf mechanisch flexiblem polymersubstrat mit aus lösung prozessierbarem dielektrikum bei niedrigen temperaturen |
CN104700890B (zh) | 2009-12-18 | 2017-10-17 | 株式会社半导体能源研究所 | 非易失性锁存电路和逻辑电路以及使用它们的半导体器件 |
US9057758B2 (en) * | 2009-12-18 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for measuring current, method for inspecting semiconductor device, semiconductor device, and test element group |
WO2011074407A1 (en) | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR101768433B1 (ko) | 2009-12-18 | 2017-08-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작 방법 |
WO2011074379A1 (en) | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and driving method thereof |
KR101282383B1 (ko) | 2009-12-18 | 2013-07-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 전자 기기 |
KR20240118180A (ko) | 2009-12-18 | 2024-08-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 |
KR101481399B1 (ko) | 2009-12-18 | 2015-01-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20120115318A (ko) | 2009-12-23 | 2012-10-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2011077926A1 (en) | 2009-12-24 | 2011-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
WO2011077916A1 (en) | 2009-12-24 | 2011-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
WO2011077978A1 (en) | 2009-12-25 | 2011-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
KR20210138135A (ko) | 2009-12-25 | 2021-11-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20170142998A (ko) | 2009-12-25 | 2017-12-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작 방법 |
US8441009B2 (en) * | 2009-12-25 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101473684B1 (ko) | 2009-12-25 | 2014-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101874779B1 (ko) * | 2009-12-25 | 2018-07-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 메모리 장치, 반도체 장치, 및 전자 장치 |
KR101613701B1 (ko) | 2009-12-25 | 2016-04-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치의 구동 방법 |
KR101762316B1 (ko) | 2009-12-28 | 2017-07-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101436120B1 (ko) | 2009-12-28 | 2014-09-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
KR101760537B1 (ko) | 2009-12-28 | 2017-07-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101872678B1 (ko) | 2009-12-28 | 2018-07-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 전자 기기 |
WO2011081041A1 (en) * | 2009-12-28 | 2011-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
KR102063214B1 (ko) | 2009-12-28 | 2020-01-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억 장치와 반도체 장치 |
US8288767B2 (en) * | 2010-01-04 | 2012-10-16 | National Taiwan University | Thin-film transistor and forming method thereof |
CN102725841B (zh) * | 2010-01-15 | 2016-10-05 | 株式会社半导体能源研究所 | 半导体器件 |
KR102114011B1 (ko) | 2010-01-15 | 2020-05-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 이를 구동하는 방법 |
WO2011086847A1 (en) | 2010-01-15 | 2011-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8780629B2 (en) | 2010-01-15 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
KR101943807B1 (ko) | 2010-01-15 | 2019-01-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2011086871A1 (en) * | 2010-01-15 | 2011-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
CN102696064B (zh) | 2010-01-15 | 2015-11-25 | 株式会社半导体能源研究所 | 半导体装置和电子装置 |
KR102217907B1 (ko) | 2010-01-20 | 2021-02-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR101889382B1 (ko) | 2010-01-20 | 2018-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전자 기기 및 전자 시스템 |
US8415731B2 (en) * | 2010-01-20 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor storage device with integrated capacitor and having transistor overlapping sections |
KR101791829B1 (ko) | 2010-01-20 | 2017-10-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 휴대 전자 기기 |
WO2011089842A1 (en) | 2010-01-20 | 2011-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of liquid crystal display device |
US9984617B2 (en) | 2010-01-20 | 2018-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Display device including light emitting element |
WO2011089843A1 (en) | 2010-01-20 | 2011-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving display device |
WO2011089847A1 (en) | 2010-01-20 | 2011-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing circuit and method for driving the same |
KR101851517B1 (ko) | 2010-01-20 | 2018-04-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101750126B1 (ko) | 2010-01-20 | 2017-06-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치의 구동 방법 및 액정 표시 장치 |
CN102714029B (zh) * | 2010-01-20 | 2016-03-23 | 株式会社半导体能源研究所 | 显示装置的显示方法 |
KR20180043383A (ko) | 2010-01-22 | 2018-04-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작 방법 |
KR101773641B1 (ko) | 2010-01-22 | 2017-09-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR102088281B1 (ko) | 2010-01-22 | 2020-03-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101873730B1 (ko) | 2010-01-24 | 2018-07-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR20190093706A (ko) | 2010-01-24 | 2019-08-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치와 이의 제조 방법 |
TWI525377B (zh) | 2010-01-24 | 2016-03-11 | 半導體能源研究所股份有限公司 | 顯示裝置 |
KR101800850B1 (ko) | 2010-01-29 | 2017-11-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기억 장치 |
WO2011093150A1 (en) | 2010-01-29 | 2011-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2011093151A1 (en) | 2010-01-29 | 2011-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device including the same |
TWI424392B (zh) * | 2010-01-29 | 2014-01-21 | Prime View Int Co Ltd | 主動元件陣列基板及使用其之平面顯示器 |
KR101791713B1 (ko) | 2010-02-05 | 2017-10-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전계 효과 트랜지스터 및 반도체 장치 |
US8436403B2 (en) | 2010-02-05 | 2013-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor provided with sidewall and electronic appliance |
US9391209B2 (en) | 2010-02-05 | 2016-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR101399610B1 (ko) * | 2010-02-05 | 2014-05-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제조 방법 |
CN105590964B (zh) | 2010-02-05 | 2019-01-04 | 株式会社半导体能源研究所 | 半导体装置 |
CN106847816A (zh) | 2010-02-05 | 2017-06-13 | 株式会社半导体能源研究所 | 半导体装置 |
WO2011096153A1 (en) | 2010-02-05 | 2011-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
WO2011096271A1 (en) | 2010-02-05 | 2011-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
WO2011096264A1 (en) | 2010-02-05 | 2011-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving semiconductor device |
WO2011096270A1 (en) | 2010-02-05 | 2011-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR101862823B1 (ko) * | 2010-02-05 | 2018-05-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 구동 방법 |
KR101810261B1 (ko) | 2010-02-10 | 2017-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전계 효과 트랜지스터 |
US8947337B2 (en) | 2010-02-11 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR102197415B1 (ko) * | 2010-02-12 | 2020-12-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 구동 방법 |
WO2011099336A1 (en) | 2010-02-12 | 2011-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
WO2011099360A1 (en) | 2010-02-12 | 2011-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
WO2011099368A1 (en) * | 2010-02-12 | 2011-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
US8617920B2 (en) * | 2010-02-12 | 2013-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101830196B1 (ko) | 2010-02-12 | 2018-02-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 구동 방법 |
WO2011099376A1 (en) | 2010-02-12 | 2011-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
CN102742002B (zh) * | 2010-02-12 | 2015-01-28 | 株式会社半导体能源研究所 | 半导体器件及其驱动方法 |
WO2011099335A1 (en) | 2010-02-12 | 2011-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR20230145240A (ko) | 2010-02-18 | 2023-10-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR102015762B1 (ko) * | 2010-02-19 | 2019-08-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 메모리 장치, 그 구동 방법, 및 반도체 장치 제작 방법 |
WO2011102248A1 (en) * | 2010-02-19 | 2011-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
KR101780748B1 (ko) | 2010-02-19 | 2017-09-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복조회로 및 복조회로를 이용한 rfid 태그 |
CN102754163B (zh) | 2010-02-19 | 2015-11-25 | 株式会社半导体能源研究所 | 半导体器件 |
CN102812421B (zh) | 2010-02-19 | 2016-05-18 | 株式会社半导体能源研究所 | 显示设备及其驱动方法 |
WO2011102228A1 (en) | 2010-02-19 | 2011-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method of semiconductor device |
KR101686089B1 (ko) * | 2010-02-19 | 2016-12-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2011102183A1 (en) | 2010-02-19 | 2011-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR101906151B1 (ko) | 2010-02-19 | 2018-10-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 및 이를 이용한 표시 장치 |
WO2011102217A1 (en) * | 2010-02-19 | 2011-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP5740169B2 (ja) * | 2010-02-19 | 2015-06-24 | 株式会社半導体エネルギー研究所 | トランジスタの作製方法 |
KR102151495B1 (ko) * | 2010-02-23 | 2020-09-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
CN113540253A (zh) | 2010-02-26 | 2021-10-22 | 株式会社半导体能源研究所 | 制造半导体装置的方法 |
CN102770902B (zh) * | 2010-02-26 | 2016-11-23 | 株式会社半导体能源研究所 | 显示设备及其驱动方法 |
WO2011105218A1 (en) | 2010-02-26 | 2011-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device and e-book reader provided therewith |
US9000438B2 (en) * | 2010-02-26 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR20130009978A (ko) | 2010-02-26 | 2013-01-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 소자의 제조 방법 및 성막 장치 |
KR102500983B1 (ko) | 2010-02-26 | 2023-02-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 |
KR20190000365A (ko) | 2010-02-26 | 2019-01-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치를 제작하기 위한 방법 |
WO2011105310A1 (en) | 2010-02-26 | 2011-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2011105198A1 (en) | 2010-02-26 | 2011-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR101838628B1 (ko) | 2010-03-02 | 2018-03-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 펄스 신호 출력 회로 및 시프트 레지스터 |
WO2011108367A1 (en) | 2010-03-02 | 2011-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Boosting circuit and rfid tag including boosting circuit |
CN102783025B (zh) | 2010-03-02 | 2015-10-07 | 株式会社半导体能源研究所 | 脉冲信号输出电路和移位寄存器 |
KR101807734B1 (ko) | 2010-03-02 | 2017-12-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 펄스 신호 출력 회로 및 시프트 레지스터 |
KR101932909B1 (ko) | 2010-03-04 | 2018-12-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 메모리 장치 및 반도체 장치 |
KR101878206B1 (ko) | 2010-03-05 | 2018-07-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막의 제작 방법 및 트랜지스터의 제작 방법 |
WO2011108382A1 (en) * | 2010-03-05 | 2011-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
WO2011108381A1 (en) * | 2010-03-05 | 2011-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2011108374A1 (en) | 2010-03-05 | 2011-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
EP2365417A3 (en) * | 2010-03-08 | 2015-04-29 | Semiconductor Energy Laboratory Co, Ltd. | Electronic device and electronic system |
WO2011111549A1 (en) | 2010-03-08 | 2011-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101812467B1 (ko) * | 2010-03-08 | 2017-12-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20130007597A (ko) | 2010-03-08 | 2013-01-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치를 제작하는 방법 |
CN102782822B (zh) | 2010-03-08 | 2016-06-01 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
WO2011111504A1 (en) | 2010-03-08 | 2011-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and electronic system |
WO2011111490A1 (en) | 2010-03-08 | 2011-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
KR101769970B1 (ko) | 2010-03-12 | 2017-08-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US8900362B2 (en) * | 2010-03-12 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of gallium oxide single crystal |
KR101770550B1 (ko) * | 2010-03-12 | 2017-08-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치의 구동 방법 |
WO2011111506A1 (en) | 2010-03-12 | 2011-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving circuit and method for driving display device |
CN102822978B (zh) | 2010-03-12 | 2015-07-22 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
WO2011114866A1 (en) * | 2010-03-17 | 2011-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
WO2011114905A1 (en) * | 2010-03-19 | 2011-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
WO2011114868A1 (en) | 2010-03-19 | 2011-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20110227082A1 (en) * | 2010-03-19 | 2011-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2011114867A1 (en) | 2010-03-19 | 2011-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method of semiconductor device |
WO2011114919A1 (en) | 2010-03-19 | 2011-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2011118351A1 (en) | 2010-03-25 | 2011-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR101799757B1 (ko) * | 2010-03-26 | 2017-11-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치를 제작하는 방법 |
JP5731244B2 (ja) * | 2010-03-26 | 2015-06-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
WO2011118364A1 (en) | 2010-03-26 | 2011-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2011118741A1 (en) * | 2010-03-26 | 2011-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
CN102834921B (zh) | 2010-03-26 | 2016-04-27 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
WO2011122280A1 (en) | 2010-03-31 | 2011-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
CN102884477B (zh) | 2010-03-31 | 2015-11-25 | 株式会社半导体能源研究所 | 液晶显示设备及其驱动方法 |
WO2011122514A1 (en) | 2010-03-31 | 2011-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Power supply device and driving method thereof |
KR20130069583A (ko) | 2010-03-31 | 2013-06-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 필드 시퀀셜 구동형 표시 장치 |
WO2011122299A1 (en) | 2010-03-31 | 2011-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of liquid crystal display device |
CN105810752B (zh) | 2010-04-02 | 2019-11-19 | 株式会社半导体能源研究所 | 半导体装置 |
US9196739B2 (en) | 2010-04-02 | 2015-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor film and metal oxide film |
US9147768B2 (en) | 2010-04-02 | 2015-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide semiconductor and a metal oxide film |
US9190522B2 (en) | 2010-04-02 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide semiconductor |
KR102292523B1 (ko) | 2010-04-02 | 2021-08-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US8884282B2 (en) | 2010-04-02 | 2014-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2011125432A1 (en) | 2010-04-07 | 2011-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
KR101810592B1 (ko) | 2010-04-07 | 2017-12-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 |
KR101803730B1 (ko) | 2010-04-09 | 2017-12-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101321833B1 (ko) | 2010-04-09 | 2013-10-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체 메모리 장치 |
US8207025B2 (en) | 2010-04-09 | 2012-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
CN102834861B (zh) | 2010-04-09 | 2016-02-10 | 株式会社半导体能源研究所 | 液晶显示设备和驱动该液晶显示设备的方法 |
WO2011125806A1 (en) | 2010-04-09 | 2011-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
WO2011125456A1 (en) | 2010-04-09 | 2011-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8653514B2 (en) | 2010-04-09 | 2014-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8854583B2 (en) | 2010-04-12 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and liquid crystal display device |
JP5744366B2 (ja) | 2010-04-12 | 2015-07-08 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
KR101881729B1 (ko) | 2010-04-16 | 2018-07-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 성막 방법 및 반도체 장치를 제작하기 위한 방법 |
KR20130061678A (ko) | 2010-04-16 | 2013-06-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전원 회로 |
US8552712B2 (en) | 2010-04-16 | 2013-10-08 | Semiconductor Energy Laboratory Co., Ltd. | Current measurement method, inspection method of semiconductor device, semiconductor device, and test element group |
KR101904445B1 (ko) | 2010-04-16 | 2018-10-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US8692243B2 (en) | 2010-04-20 | 2014-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2011132548A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101887336B1 (ko) | 2010-04-23 | 2018-08-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 구동 방법 |
KR101826831B1 (ko) | 2010-04-23 | 2018-02-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
KR101877377B1 (ko) | 2010-04-23 | 2018-07-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
US9537043B2 (en) | 2010-04-23 | 2017-01-03 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
WO2011132591A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
CN103500709B (zh) | 2010-04-23 | 2015-09-23 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
KR101540039B1 (ko) | 2010-04-23 | 2015-07-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
WO2011135999A1 (en) | 2010-04-27 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
US9349325B2 (en) | 2010-04-28 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
US9697788B2 (en) | 2010-04-28 | 2017-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
CN105824397B (zh) | 2010-04-28 | 2018-12-18 | 株式会社半导体能源研究所 | 半导体显示装置及其驱动方法 |
WO2011136018A1 (en) | 2010-04-28 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic appliance |
US8890555B2 (en) | 2010-04-28 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for measuring transistor |
WO2011135987A1 (en) | 2010-04-28 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9478185B2 (en) | 2010-05-12 | 2016-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical display device and display method thereof |
US9064473B2 (en) | 2010-05-12 | 2015-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical display device and display method thereof |
JP5797449B2 (ja) | 2010-05-13 | 2015-10-21 | 株式会社半導体エネルギー研究所 | 半導体装置の評価方法 |
TWI511236B (zh) | 2010-05-14 | 2015-12-01 | Semiconductor Energy Lab | 半導體裝置 |
WO2011142371A1 (en) | 2010-05-14 | 2011-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8664658B2 (en) | 2010-05-14 | 2014-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2011142467A1 (en) | 2010-05-14 | 2011-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8624239B2 (en) | 2010-05-20 | 2014-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9496405B2 (en) | 2010-05-20 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer |
US8416622B2 (en) | 2010-05-20 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of a semiconductor device with an inverted period having a negative potential applied to a gate of an oxide semiconductor transistor |
US9490368B2 (en) | 2010-05-20 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
US8588000B2 (en) | 2010-05-20 | 2013-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device having a reading transistor with a back-gate electrode |
WO2011145468A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
KR101808198B1 (ko) | 2010-05-21 | 2017-12-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
WO2011145707A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
WO2011145467A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5766012B2 (ja) | 2010-05-21 | 2015-08-19 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
WO2011145484A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2011145633A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5714973B2 (ja) | 2010-05-21 | 2015-05-07 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CN105957802A (zh) | 2010-05-21 | 2016-09-21 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
JP5852793B2 (ja) | 2010-05-21 | 2016-02-03 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
WO2011145632A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
US8629438B2 (en) | 2010-05-21 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2011145634A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2011145537A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
KR101872188B1 (ko) | 2010-05-21 | 2018-06-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 표시 장치 |
JP5749975B2 (ja) | 2010-05-28 | 2015-07-15 | 株式会社半導体エネルギー研究所 | 光検出装置、及び、タッチパネル |
US8895375B2 (en) | 2010-06-01 | 2014-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Field effect transistor and method for manufacturing the same |
KR101894897B1 (ko) | 2010-06-04 | 2018-09-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2011152286A1 (en) | 2010-06-04 | 2011-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2011152254A1 (en) | 2010-06-04 | 2011-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8779433B2 (en) | 2010-06-04 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
FR2961016B1 (fr) * | 2010-06-07 | 2013-06-07 | Commissariat Energie Atomique | Circuit integre a dispositif de type fet sans jonction et a depletion |
WO2011155295A1 (en) | 2010-06-10 | 2011-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Dc/dc converter, power supply circuit, and semiconductor device |
CN102939659B (zh) | 2010-06-11 | 2016-08-17 | 株式会社半导体能源研究所 | 半导体器件及半导体器件的制造方法 |
WO2011155302A1 (en) | 2010-06-11 | 2011-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8610180B2 (en) | 2010-06-11 | 2013-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Gas sensor and method for manufacturing the gas sensor |
US9209314B2 (en) | 2010-06-16 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Field effect transistor |
JP5797471B2 (ja) | 2010-06-16 | 2015-10-21 | 株式会社半導体エネルギー研究所 | 入出力装置 |
JP5823740B2 (ja) | 2010-06-16 | 2015-11-25 | 株式会社半導体エネルギー研究所 | 入出力装置 |
WO2011158703A1 (en) | 2010-06-18 | 2011-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8552425B2 (en) | 2010-06-18 | 2013-10-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2011158704A1 (en) | 2010-06-18 | 2011-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8637802B2 (en) | 2010-06-18 | 2014-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Photosensor, semiconductor device including photosensor, and light measurement method using photosensor |
WO2011162147A1 (en) | 2010-06-23 | 2011-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20120000499A (ko) | 2010-06-25 | 2012-01-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 및 반도체 장치 |
WO2011162104A1 (en) | 2010-06-25 | 2011-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
US8912016B2 (en) | 2010-06-25 | 2014-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method and test method of semiconductor device |
WO2012002236A1 (en) | 2010-06-29 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Wiring board, semiconductor device, and manufacturing methods thereof |
WO2012002104A1 (en) | 2010-06-30 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2012002040A1 (en) | 2010-07-01 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of liquid crystal display device |
US8441010B2 (en) | 2010-07-01 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9473714B2 (en) | 2010-07-01 | 2016-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Solid-state imaging device and semiconductor display device |
KR20130090405A (ko) | 2010-07-02 | 2013-08-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 |
KR102354354B1 (ko) | 2010-07-02 | 2022-01-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
WO2012002186A1 (en) | 2010-07-02 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8642380B2 (en) | 2010-07-02 | 2014-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
JP5792524B2 (ja) | 2010-07-02 | 2015-10-14 | 株式会社半導体エネルギー研究所 | 装置 |
CN102959713B (zh) | 2010-07-02 | 2017-05-10 | 株式会社半导体能源研究所 | 半导体装置 |
TWI541782B (zh) | 2010-07-02 | 2016-07-11 | 半導體能源研究所股份有限公司 | 液晶顯示裝置 |
US9336739B2 (en) | 2010-07-02 | 2016-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US8605059B2 (en) | 2010-07-02 | 2013-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Input/output device and driving method thereof |
US8785241B2 (en) | 2010-07-16 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2012008390A1 (en) | 2010-07-16 | 2012-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR101859361B1 (ko) | 2010-07-16 | 2018-05-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2012008304A1 (en) | 2010-07-16 | 2012-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8519387B2 (en) | 2010-07-26 | 2013-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing |
KR101853516B1 (ko) | 2010-07-27 | 2018-04-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2012014952A1 (en) | 2010-07-27 | 2012-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
TWI565001B (zh) | 2010-07-28 | 2017-01-01 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的驅動方法 |
US8043889B1 (en) | 2010-07-28 | 2011-10-25 | Sharp Laboratories Of America, Inc. | Patterned chemical bath deposition of a textured thin film from a printed seed layer |
JP5846789B2 (ja) | 2010-07-29 | 2016-01-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2012014786A1 (en) | 2010-07-30 | 2012-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Semicondcutor device and manufacturing method thereof |
US8928466B2 (en) | 2010-08-04 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8537600B2 (en) | 2010-08-04 | 2013-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Low off-state leakage current semiconductor memory device |
KR101842181B1 (ko) | 2010-08-04 | 2018-03-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP5739257B2 (ja) | 2010-08-05 | 2015-06-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8467232B2 (en) | 2010-08-06 | 2013-06-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8803164B2 (en) | 2010-08-06 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Solid-state image sensing device and semiconductor display device |
TWI524347B (zh) | 2010-08-06 | 2016-03-01 | 半導體能源研究所股份有限公司 | 半導體裝置及其驅動方法 |
JP5832181B2 (ja) | 2010-08-06 | 2015-12-16 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
US8467231B2 (en) | 2010-08-06 | 2013-06-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
US8792284B2 (en) | 2010-08-06 | 2014-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor memory device |
JP5671418B2 (ja) | 2010-08-06 | 2015-02-18 | 株式会社半導体エネルギー研究所 | 半導体装置の駆動方法 |
TWI545587B (zh) | 2010-08-06 | 2016-08-11 | 半導體能源研究所股份有限公司 | 半導體裝置及驅動半導體裝置的方法 |
WO2012017844A1 (en) | 2010-08-06 | 2012-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
TWI688047B (zh) | 2010-08-06 | 2020-03-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
US8422272B2 (en) | 2010-08-06 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
TWI555128B (zh) | 2010-08-06 | 2016-10-21 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的驅動方法 |
CN103069717B (zh) | 2010-08-06 | 2018-01-30 | 株式会社半导体能源研究所 | 半导体集成电路 |
US8748224B2 (en) | 2010-08-16 | 2014-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US9129703B2 (en) | 2010-08-16 | 2015-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving semiconductor memory device |
JP5848912B2 (ja) | 2010-08-16 | 2016-01-27 | 株式会社半導体エネルギー研究所 | 液晶表示装置の制御回路、液晶表示装置、及び当該液晶表示装置を具備する電子機器 |
US9343480B2 (en) | 2010-08-16 | 2016-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
TWI508294B (zh) | 2010-08-19 | 2015-11-11 | Semiconductor Energy Lab | 半導體裝置 |
US8759820B2 (en) | 2010-08-20 | 2014-06-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8883555B2 (en) | 2010-08-25 | 2014-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, manufacturing method of electronic device, and sputtering target |
US8685787B2 (en) | 2010-08-25 | 2014-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US8508276B2 (en) | 2010-08-25 | 2013-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including latch circuit |
JP5727892B2 (ja) | 2010-08-26 | 2015-06-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9058047B2 (en) | 2010-08-26 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2013009285A (ja) | 2010-08-26 | 2013-01-10 | Semiconductor Energy Lab Co Ltd | 信号処理回路及びその駆動方法 |
KR20120020073A (ko) | 2010-08-27 | 2012-03-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 설계 방법 |
US8603841B2 (en) | 2010-08-27 | 2013-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing methods of semiconductor device and light-emitting display device |
KR101979758B1 (ko) | 2010-08-27 | 2019-05-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억 장치, 반도체 장치 |
JP5763474B2 (ja) | 2010-08-27 | 2015-08-12 | 株式会社半導体エネルギー研究所 | 光センサ |
JP5674594B2 (ja) | 2010-08-27 | 2015-02-25 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の駆動方法 |
JP5806043B2 (ja) | 2010-08-27 | 2015-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8450123B2 (en) | 2010-08-27 | 2013-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Oxygen diffusion evaluation method of oxide film stacked body |
JP5702689B2 (ja) | 2010-08-31 | 2015-04-15 | 株式会社半導体エネルギー研究所 | 半導体装置の駆動方法、及び半導体装置 |
US8575610B2 (en) | 2010-09-02 | 2013-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
US8634228B2 (en) | 2010-09-02 | 2014-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of semiconductor device |
US8728860B2 (en) | 2010-09-03 | 2014-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
WO2012029612A1 (en) | 2010-09-03 | 2012-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target and method for manufacturing semiconductor device |
WO2012029638A1 (en) | 2010-09-03 | 2012-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20130102581A (ko) | 2010-09-03 | 2013-09-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전계 효과 트랜지스터 및 반도체 장치의 제조 방법 |
US8487844B2 (en) | 2010-09-08 | 2013-07-16 | Semiconductor Energy Laboratory Co., Ltd. | EL display device and electronic device including the same |
US8520426B2 (en) | 2010-09-08 | 2013-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving semiconductor device |
JP2012256819A (ja) | 2010-09-08 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
KR101824125B1 (ko) | 2010-09-10 | 2018-02-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR20120026970A (ko) | 2010-09-10 | 2012-03-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 발광 장치 |
US8797487B2 (en) | 2010-09-10 | 2014-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, liquid crystal display device, and manufacturing method thereof |
US8766253B2 (en) | 2010-09-10 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9142568B2 (en) | 2010-09-10 | 2015-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light-emitting display device |
KR101872926B1 (ko) | 2010-09-13 | 2018-06-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US8664097B2 (en) | 2010-09-13 | 2014-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US8647919B2 (en) | 2010-09-13 | 2014-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting display device and method for manufacturing the same |
JP2012256821A (ja) | 2010-09-13 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 記憶装置 |
US9546416B2 (en) | 2010-09-13 | 2017-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming crystalline oxide semiconductor film |
KR101932576B1 (ko) | 2010-09-13 | 2018-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
US9496743B2 (en) | 2010-09-13 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Power receiving device and wireless power feed system |
KR101952235B1 (ko) | 2010-09-13 | 2019-02-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
US8558960B2 (en) | 2010-09-13 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
US8835917B2 (en) | 2010-09-13 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, power diode, and rectifier |
TWI543166B (zh) | 2010-09-13 | 2016-07-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
JP5815337B2 (ja) | 2010-09-13 | 2015-11-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP5827520B2 (ja) | 2010-09-13 | 2015-12-02 | 株式会社半導体エネルギー研究所 | 半導体記憶装置 |
US8546161B2 (en) | 2010-09-13 | 2013-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor and liquid crystal display device |
US8592879B2 (en) | 2010-09-13 | 2013-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8871565B2 (en) | 2010-09-13 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
TWI539453B (zh) | 2010-09-14 | 2016-06-21 | 半導體能源研究所股份有限公司 | 記憶體裝置和半導體裝置 |
KR20140054465A (ko) | 2010-09-15 | 2014-05-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 표시 장치 |
JP2012256012A (ja) | 2010-09-15 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 表示装置 |
KR20130106398A (ko) | 2010-09-15 | 2013-09-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 그 제작 방법 |
US9230994B2 (en) | 2010-09-15 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
KR101856722B1 (ko) | 2010-09-22 | 2018-05-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 파워 절연 게이트형 전계 효과 트랜지스터 |
US8767443B2 (en) | 2010-09-22 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device and method for inspecting the same |
US8792260B2 (en) | 2010-09-27 | 2014-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Rectifier circuit and semiconductor device using the same |
TWI574259B (zh) | 2010-09-29 | 2017-03-11 | 半導體能源研究所股份有限公司 | 半導體記憶體裝置和其驅動方法 |
TWI539456B (zh) | 2010-10-05 | 2016-06-21 | 半導體能源研究所股份有限公司 | 半導體記憶體裝置及其驅動方法 |
US9437743B2 (en) | 2010-10-07 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film element, semiconductor device, and method for manufacturing the same |
US8716646B2 (en) | 2010-10-08 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for operating the same |
KR101778224B1 (ko) * | 2010-10-12 | 2017-09-15 | 삼성전자주식회사 | 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자 |
US8679986B2 (en) | 2010-10-14 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
JP5597510B2 (ja) * | 2010-10-14 | 2014-10-01 | 出光興産株式会社 | コアシェル半導体微粒子 |
KR101989392B1 (ko) * | 2010-10-20 | 2019-06-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 구동 방법 |
US8803143B2 (en) | 2010-10-20 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor including buffer layers with high resistivity |
US8546892B2 (en) | 2010-10-20 | 2013-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
TWI543158B (zh) | 2010-10-25 | 2016-07-21 | 半導體能源研究所股份有限公司 | 半導體儲存裝置及其驅動方法 |
KR101924231B1 (ko) | 2010-10-29 | 2018-11-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기억 장치 |
JP5771505B2 (ja) | 2010-10-29 | 2015-09-02 | 株式会社半導体エネルギー研究所 | 受信回路 |
WO2012057296A1 (en) | 2010-10-29 | 2012-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Storage device |
WO2012060428A1 (ja) | 2010-11-02 | 2012-05-10 | 宇部興産株式会社 | (アミドアミノアルカン)金属化合物、及び当該金属化合物を用いた金属含有薄膜の製造方法 |
US8916866B2 (en) | 2010-11-03 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
TWI555205B (zh) | 2010-11-05 | 2016-10-21 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
WO2012060253A1 (en) | 2010-11-05 | 2012-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9087744B2 (en) | 2010-11-05 | 2015-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving transistor |
US8957468B2 (en) | 2010-11-05 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Variable capacitor and liquid crystal display device |
KR101305119B1 (ko) | 2010-11-05 | 2013-09-12 | 현대자동차주식회사 | 잉크젯 인쇄용 반도체 산화물 잉크 조성물과 이의 제조방법 및 이를 이용한 광전변환 소자의 제조방법 |
JP6010291B2 (ja) | 2010-11-05 | 2016-10-19 | 株式会社半導体エネルギー研究所 | 表示装置の駆動方法 |
US8569754B2 (en) | 2010-11-05 | 2013-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101952733B1 (ko) | 2010-11-05 | 2019-02-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US8902637B2 (en) | 2010-11-08 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device comprising inverting amplifier circuit and driving method thereof |
TWI654764B (zh) | 2010-11-11 | 2019-03-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
TWI541981B (zh) | 2010-11-12 | 2016-07-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
US8854865B2 (en) | 2010-11-24 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
US8936965B2 (en) | 2010-11-26 | 2015-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8816425B2 (en) | 2010-11-30 | 2014-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8823092B2 (en) | 2010-11-30 | 2014-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
TWI562379B (en) | 2010-11-30 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing semiconductor device |
US9103724B2 (en) | 2010-11-30 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device |
US8629496B2 (en) | 2010-11-30 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8809852B2 (en) | 2010-11-30 | 2014-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same |
US8461630B2 (en) | 2010-12-01 | 2013-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR20240025046A (ko) | 2010-12-03 | 2024-02-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막 및 반도체 장치 |
JP5908263B2 (ja) | 2010-12-03 | 2016-04-26 | 株式会社半導体エネルギー研究所 | Dc−dcコンバータ |
TWI632551B (zh) | 2010-12-03 | 2018-08-11 | 半導體能源研究所股份有限公司 | 積體電路,其驅動方法,及半導體裝置 |
JP5856827B2 (ja) | 2010-12-09 | 2016-02-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI534905B (zh) | 2010-12-10 | 2016-05-21 | 半導體能源研究所股份有限公司 | 顯示裝置及顯示裝置之製造方法 |
JP2012256020A (ja) | 2010-12-15 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその駆動方法 |
JP2012142562A (ja) | 2010-12-17 | 2012-07-26 | Semiconductor Energy Lab Co Ltd | 半導体記憶装置 |
US8730416B2 (en) | 2010-12-17 | 2014-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US9202822B2 (en) | 2010-12-17 | 2015-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8894825B2 (en) | 2010-12-17 | 2014-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target, method for manufacturing the same, manufacturing semiconductor device |
US9024317B2 (en) | 2010-12-24 | 2015-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device |
US9911858B2 (en) | 2010-12-28 | 2018-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP5864054B2 (ja) | 2010-12-28 | 2016-02-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2012090973A1 (en) | 2010-12-28 | 2012-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP5993141B2 (ja) | 2010-12-28 | 2016-09-14 | 株式会社半導体エネルギー研究所 | 記憶装置 |
JP5852874B2 (ja) | 2010-12-28 | 2016-02-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9048142B2 (en) | 2010-12-28 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5973165B2 (ja) | 2010-12-28 | 2016-08-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8941112B2 (en) | 2010-12-28 | 2015-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP6030298B2 (ja) | 2010-12-28 | 2016-11-24 | 株式会社半導体エネルギー研究所 | 緩衝記憶装置及び信号処理回路 |
JP2012151453A (ja) | 2010-12-28 | 2012-08-09 | Semiconductor Energy Lab Co Ltd | 半導体装置および半導体装置の駆動方法 |
JP5975635B2 (ja) | 2010-12-28 | 2016-08-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9443984B2 (en) | 2010-12-28 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2012090799A1 (en) | 2010-12-28 | 2012-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
TWI562142B (en) | 2011-01-05 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Storage element, storage device, and signal processing circuit |
US8536571B2 (en) | 2011-01-12 | 2013-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US8912080B2 (en) | 2011-01-12 | 2014-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of the semiconductor device |
TWI570809B (zh) | 2011-01-12 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
US8921948B2 (en) | 2011-01-12 | 2014-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
TWI535032B (zh) | 2011-01-12 | 2016-05-21 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
US8421071B2 (en) | 2011-01-13 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
US8575678B2 (en) | 2011-01-13 | 2013-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device with floating gate |
JP5859839B2 (ja) | 2011-01-14 | 2016-02-16 | 株式会社半導体エネルギー研究所 | 記憶素子の駆動方法、及び、記憶素子 |
TWI657565B (zh) | 2011-01-14 | 2019-04-21 | 日商半導體能源研究所股份有限公司 | 半導體記憶裝置 |
KR102026718B1 (ko) | 2011-01-14 | 2019-09-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억장치, 반도체 장치, 검출 방법 |
KR101942701B1 (ko) | 2011-01-20 | 2019-01-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체 소자 및 반도체 장치 |
CN103348464B (zh) | 2011-01-26 | 2016-01-13 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
TWI570920B (zh) | 2011-01-26 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
WO2012102182A1 (en) | 2011-01-26 | 2012-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5798933B2 (ja) | 2011-01-26 | 2015-10-21 | 株式会社半導体エネルギー研究所 | 信号処理回路 |
TWI614747B (zh) | 2011-01-26 | 2018-02-11 | 半導體能源研究所股份有限公司 | 記憶體裝置及半導體裝置 |
TWI552345B (zh) | 2011-01-26 | 2016-10-01 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
TWI657580B (zh) | 2011-01-26 | 2019-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
TWI525619B (zh) | 2011-01-27 | 2016-03-11 | 半導體能源研究所股份有限公司 | 記憶體電路 |
KR20190007525A (ko) | 2011-01-27 | 2019-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9494829B2 (en) | 2011-01-28 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and liquid crystal display device containing the same |
KR101984218B1 (ko) | 2011-01-28 | 2019-05-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 및 반도체 장치 |
WO2012102281A1 (en) | 2011-01-28 | 2012-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8634230B2 (en) | 2011-01-28 | 2014-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
US9799773B2 (en) | 2011-02-02 | 2017-10-24 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and semiconductor device |
US8513773B2 (en) | 2011-02-02 | 2013-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Capacitor and semiconductor device including dielectric and N-type semiconductor |
JP6000560B2 (ja) | 2011-02-02 | 2016-09-28 | 株式会社半導体エネルギー研究所 | 半導体メモリ装置 |
TWI520273B (zh) | 2011-02-02 | 2016-02-01 | 半導體能源研究所股份有限公司 | 半導體儲存裝置 |
US9431400B2 (en) | 2011-02-08 | 2016-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device and method for manufacturing the same |
US8787083B2 (en) | 2011-02-10 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Memory circuit |
US9167234B2 (en) | 2011-02-14 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US8975680B2 (en) | 2011-02-17 | 2015-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device and method manufacturing semiconductor memory device |
KR101899880B1 (ko) | 2011-02-17 | 2018-09-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 프로그래머블 lsi |
US8643007B2 (en) | 2011-02-23 | 2014-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8709920B2 (en) | 2011-02-24 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9443455B2 (en) | 2011-02-25 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device having a plurality of pixels |
US9691772B2 (en) | 2011-03-03 | 2017-06-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device including memory cell which includes transistor and capacitor |
US8841664B2 (en) * | 2011-03-04 | 2014-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8659015B2 (en) | 2011-03-04 | 2014-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9023684B2 (en) | 2011-03-04 | 2015-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9646829B2 (en) | 2011-03-04 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US8785933B2 (en) | 2011-03-04 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5898527B2 (ja) | 2011-03-04 | 2016-04-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8659957B2 (en) | 2011-03-07 | 2014-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving semiconductor device |
JP5827145B2 (ja) | 2011-03-08 | 2015-12-02 | 株式会社半導体エネルギー研究所 | 信号処理回路 |
US9099437B2 (en) | 2011-03-08 | 2015-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8625085B2 (en) | 2011-03-08 | 2014-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Defect evaluation method for semiconductor |
US8778447B2 (en) * | 2011-03-09 | 2014-07-15 | Electronics And Telecommunications Research Institute | Hybrid compositions containing organic material and inorganic material, and hybrid dielectric layers including the same |
US8541781B2 (en) | 2011-03-10 | 2013-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8772849B2 (en) | 2011-03-10 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
WO2012121265A1 (en) | 2011-03-10 | 2012-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and method for manufacturing the same |
US8760903B2 (en) | 2011-03-11 | 2014-06-24 | Semiconductor Energy Laboratory Co., Ltd. | Storage circuit |
JP2012209543A (ja) | 2011-03-11 | 2012-10-25 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
TWI658516B (zh) | 2011-03-11 | 2019-05-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
TWI521612B (zh) | 2011-03-11 | 2016-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
JP5933300B2 (ja) | 2011-03-16 | 2016-06-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR101995682B1 (ko) | 2011-03-18 | 2019-07-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막, 반도체 장치, 및 반도체 장치의 제작 방법 |
JP5933897B2 (ja) | 2011-03-18 | 2016-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR101850510B1 (ko) * | 2011-03-22 | 2018-04-20 | 삼성디스플레이 주식회사 | 산화물 반도체의 전구체 조성물 및 이를 이용한 박막 트랜지스터 표시판의 제조 방법 |
US8859330B2 (en) | 2011-03-23 | 2014-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP5839474B2 (ja) | 2011-03-24 | 2016-01-06 | 株式会社半導体エネルギー研究所 | 信号処理回路 |
TWI582999B (zh) | 2011-03-25 | 2017-05-11 | 半導體能源研究所股份有限公司 | 場效電晶體及包含該場效電晶體之記憶體與半導體電路 |
US9219159B2 (en) | 2011-03-25 | 2015-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming oxide semiconductor film and method for manufacturing semiconductor device |
US8987728B2 (en) | 2011-03-25 | 2015-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
TWI545652B (zh) | 2011-03-25 | 2016-08-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
US9012904B2 (en) | 2011-03-25 | 2015-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8686416B2 (en) | 2011-03-25 | 2014-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
US8956944B2 (en) | 2011-03-25 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP6053098B2 (ja) | 2011-03-28 | 2016-12-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP5879165B2 (ja) | 2011-03-30 | 2016-03-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8927329B2 (en) | 2011-03-30 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing oxide semiconductor device with improved electronic properties |
US8686486B2 (en) | 2011-03-31 | 2014-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
US9082860B2 (en) | 2011-03-31 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
TWI567735B (zh) | 2011-03-31 | 2017-01-21 | 半導體能源研究所股份有限公司 | 記憶體電路,記憶體單元,及訊號處理電路 |
JP5982147B2 (ja) | 2011-04-01 | 2016-08-31 | 株式会社半導体エネルギー研究所 | 発光装置 |
US8541266B2 (en) | 2011-04-01 | 2013-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
WO2012138409A2 (en) * | 2011-04-02 | 2012-10-11 | Qd Vision, Inc. | Devices including quantum dots and method |
US9960278B2 (en) | 2011-04-06 | 2018-05-01 | Yuhei Sato | Manufacturing method of semiconductor device |
US9012905B2 (en) | 2011-04-08 | 2015-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same |
US9093538B2 (en) | 2011-04-08 | 2015-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
TWI567736B (zh) | 2011-04-08 | 2017-01-21 | 半導體能源研究所股份有限公司 | 記憶體元件及信號處理電路 |
JP2012256406A (ja) | 2011-04-08 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 記憶装置、及び当該記憶装置を用いた半導体装置 |
JP5883699B2 (ja) | 2011-04-13 | 2016-03-15 | 株式会社半導体エネルギー研究所 | プログラマブルlsi |
US9478668B2 (en) | 2011-04-13 | 2016-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
US8854867B2 (en) | 2011-04-13 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and driving method of the memory device |
JP5890234B2 (ja) | 2011-04-15 | 2016-03-22 | 株式会社半導体エネルギー研究所 | 半導体装置及びその駆動方法 |
US8779488B2 (en) | 2011-04-15 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
US8878174B2 (en) | 2011-04-15 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit |
JP6045176B2 (ja) | 2011-04-15 | 2016-12-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6001900B2 (ja) | 2011-04-21 | 2016-10-05 | 株式会社半導体エネルギー研究所 | 信号処理回路 |
US8878288B2 (en) | 2011-04-22 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8809854B2 (en) | 2011-04-22 | 2014-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8916868B2 (en) | 2011-04-22 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
JP5946683B2 (ja) | 2011-04-22 | 2016-07-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8941958B2 (en) | 2011-04-22 | 2015-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10079053B2 (en) | 2011-04-22 | 2018-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Memory element and memory device |
US9331206B2 (en) | 2011-04-22 | 2016-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Oxide material and semiconductor device |
US8932913B2 (en) | 2011-04-22 | 2015-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US9006803B2 (en) | 2011-04-22 | 2015-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing thereof |
CN102760697B (zh) | 2011-04-27 | 2016-08-03 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
US8681533B2 (en) | 2011-04-28 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Memory circuit, signal processing circuit, and electronic device |
US8729545B2 (en) | 2011-04-28 | 2014-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
KR101919056B1 (ko) | 2011-04-28 | 2018-11-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 회로 |
US9935622B2 (en) | 2011-04-28 | 2018-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Comparator and semiconductor device including comparator |
US8785923B2 (en) | 2011-04-29 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9614094B2 (en) | 2011-04-29 | 2017-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor layer and method for driving the same |
TWI525615B (zh) | 2011-04-29 | 2016-03-11 | 半導體能源研究所股份有限公司 | 半導體儲存裝置 |
US9111795B2 (en) | 2011-04-29 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with capacitor connected to memory element through oxide semiconductor film |
KR101963457B1 (ko) | 2011-04-29 | 2019-03-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기억 장치 및 그 구동 방법 |
US8476927B2 (en) | 2011-04-29 | 2013-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
US8446171B2 (en) | 2011-04-29 | 2013-05-21 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing unit |
US8848464B2 (en) | 2011-04-29 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving semiconductor device |
TWI671911B (zh) | 2011-05-05 | 2019-09-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
US8709922B2 (en) | 2011-05-06 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
TWI568181B (zh) | 2011-05-06 | 2017-01-21 | 半導體能源研究所股份有限公司 | 邏輯電路及半導體裝置 |
WO2012153473A1 (en) | 2011-05-06 | 2012-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8809928B2 (en) | 2011-05-06 | 2014-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, and method for manufacturing the semiconductor device |
KR101874144B1 (ko) | 2011-05-06 | 2018-07-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기억 장치 |
US9117701B2 (en) | 2011-05-06 | 2015-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9443844B2 (en) | 2011-05-10 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Gain cell semiconductor memory device and driving method thereof |
TWI541978B (zh) | 2011-05-11 | 2016-07-11 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置之驅動方法 |
US8946066B2 (en) | 2011-05-11 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
TWI557711B (zh) | 2011-05-12 | 2016-11-11 | 半導體能源研究所股份有限公司 | 顯示裝置的驅動方法 |
US8847233B2 (en) | 2011-05-12 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film |
US8897049B2 (en) | 2011-05-13 | 2014-11-25 | Semiconductor Energy Laboratories Co., Ltd. | Semiconductor device and memory device including semiconductor device |
US9048788B2 (en) | 2011-05-13 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a photoelectric conversion portion |
US9466618B2 (en) | 2011-05-13 | 2016-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including two thin film transistors and method of manufacturing the same |
JP5886128B2 (ja) | 2011-05-13 | 2016-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP5959296B2 (ja) | 2011-05-13 | 2016-08-02 | 株式会社半導体エネルギー研究所 | 半導体装置およびその製造方法 |
US9093539B2 (en) | 2011-05-13 | 2015-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9954110B2 (en) | 2011-05-13 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | EL display device and electronic device |
WO2012157472A1 (en) | 2011-05-13 | 2012-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR101957315B1 (ko) | 2011-05-13 | 2019-03-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9397222B2 (en) | 2011-05-13 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
TWI536502B (zh) | 2011-05-13 | 2016-06-01 | 半導體能源研究所股份有限公司 | 記憶體電路及電子裝置 |
KR101921772B1 (ko) | 2011-05-13 | 2018-11-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
DE112012002113T5 (de) | 2011-05-16 | 2014-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Programmierbarer Logikbaustein |
TWI570891B (zh) | 2011-05-17 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
TWI571058B (zh) | 2011-05-18 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置與驅動半導體裝置之方法 |
TWI552150B (zh) | 2011-05-18 | 2016-10-01 | 半導體能源研究所股份有限公司 | 半導體儲存裝置 |
KR102081792B1 (ko) | 2011-05-19 | 2020-02-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 연산회로 및 연산회로의 구동방법 |
US8837203B2 (en) | 2011-05-19 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR101991735B1 (ko) | 2011-05-19 | 2019-06-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 집적 회로 |
KR102093909B1 (ko) | 2011-05-19 | 2020-03-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 회로 및 회로의 구동 방법 |
US8779799B2 (en) | 2011-05-19 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit |
US9117920B2 (en) | 2011-05-19 | 2015-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device using oxide semiconductor |
US8581625B2 (en) | 2011-05-19 | 2013-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
JP6014362B2 (ja) | 2011-05-19 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
WO2012161059A1 (en) | 2011-05-20 | 2012-11-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
JP5892852B2 (ja) | 2011-05-20 | 2016-03-23 | 株式会社半導体エネルギー研究所 | プログラマブルロジックデバイス |
JP6030334B2 (ja) | 2011-05-20 | 2016-11-24 | 株式会社半導体エネルギー研究所 | 記憶装置 |
TWI614995B (zh) | 2011-05-20 | 2018-02-11 | 半導體能源研究所股份有限公司 | 鎖相迴路及使用此鎖相迴路之半導體裝置 |
JP5951351B2 (ja) | 2011-05-20 | 2016-07-13 | 株式会社半導体エネルギー研究所 | 加算器及び全加算器 |
JP6013680B2 (ja) | 2011-05-20 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP5947099B2 (ja) | 2011-05-20 | 2016-07-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI559683B (zh) | 2011-05-20 | 2016-11-21 | 半導體能源研究所股份有限公司 | 半導體積體電路 |
JP5886496B2 (ja) | 2011-05-20 | 2016-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6013682B2 (ja) | 2011-05-20 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置の駆動方法 |
JP5820336B2 (ja) | 2011-05-20 | 2015-11-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI570719B (zh) | 2011-05-20 | 2017-02-11 | 半導體能源研究所股份有限公司 | 儲存裝置及信號處理電路 |
US8508256B2 (en) | 2011-05-20 | 2013-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit |
JP5936908B2 (ja) | 2011-05-20 | 2016-06-22 | 株式会社半導体エネルギー研究所 | パリティビット出力回路およびパリティチェック回路 |
CN102789808B (zh) | 2011-05-20 | 2018-03-06 | 株式会社半导体能源研究所 | 存储器装置和用于驱动存储器装置的方法 |
TWI570730B (zh) | 2011-05-20 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
TWI557739B (zh) | 2011-05-20 | 2016-11-11 | 半導體能源研究所股份有限公司 | 半導體積體電路 |
JP5820335B2 (ja) | 2011-05-20 | 2015-11-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6091083B2 (ja) | 2011-05-20 | 2017-03-08 | 株式会社半導体エネルギー研究所 | 記憶装置 |
KR101922397B1 (ko) | 2011-05-20 | 2018-11-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP6082189B2 (ja) | 2011-05-20 | 2017-02-15 | 株式会社半導体エネルギー研究所 | 記憶装置及び信号処理回路 |
US20120298998A1 (en) | 2011-05-25 | 2012-11-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device |
KR101912971B1 (ko) | 2011-05-26 | 2018-10-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 분주 회로 및 분주 회로를 이용한 반도체 장치 |
US9171840B2 (en) | 2011-05-26 | 2015-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8610482B2 (en) | 2011-05-27 | 2013-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Trimming circuit and method for driving trimming circuit |
JP5912844B2 (ja) | 2011-05-31 | 2016-04-27 | 株式会社半導体エネルギー研究所 | プログラマブルロジックデバイス |
US9467047B2 (en) | 2011-05-31 | 2016-10-11 | Semiconductor Energy Laboratory Co., Ltd. | DC-DC converter, power source circuit, and semiconductor device |
US8669781B2 (en) | 2011-05-31 | 2014-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20140079954A1 (en) * | 2011-06-06 | 2014-03-20 | Xerox Corporation | Palladium precursor composition |
JP5890251B2 (ja) | 2011-06-08 | 2016-03-22 | 株式会社半導体エネルギー研究所 | 通信方法 |
WO2012169449A1 (en) | 2011-06-08 | 2012-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target, method for manufacturing sputtering target, and method for forming thin film |
JP2013016243A (ja) | 2011-06-09 | 2013-01-24 | Semiconductor Energy Lab Co Ltd | 記憶装置 |
JP6104522B2 (ja) | 2011-06-10 | 2017-03-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8958263B2 (en) | 2011-06-10 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8891285B2 (en) | 2011-06-10 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
US9112036B2 (en) | 2011-06-10 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
JP6005401B2 (ja) | 2011-06-10 | 2016-10-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TWI557910B (zh) | 2011-06-16 | 2016-11-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
US8804405B2 (en) | 2011-06-16 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
US9299852B2 (en) | 2011-06-16 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR102546888B1 (ko) | 2011-06-17 | 2023-06-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 디스플레이 장치 |
US8901554B2 (en) | 2011-06-17 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including channel formation region including oxide semiconductor |
KR20130007426A (ko) | 2011-06-17 | 2013-01-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
US9166055B2 (en) | 2011-06-17 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9099885B2 (en) | 2011-06-17 | 2015-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Wireless power feeding system |
US8673426B2 (en) | 2011-06-29 | 2014-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit |
US8878589B2 (en) | 2011-06-30 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
WO2013005380A1 (en) | 2011-07-01 | 2013-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP5811640B2 (ja) * | 2011-07-04 | 2015-11-11 | ソニー株式会社 | 電子デバイス及び半導体装置の製造方法 |
KR102014876B1 (ko) | 2011-07-08 | 2019-08-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US9496138B2 (en) | 2011-07-08 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device |
US9490241B2 (en) | 2011-07-08 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a first inverter and a second inverter |
US9318506B2 (en) | 2011-07-08 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9385238B2 (en) | 2011-07-08 | 2016-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Transistor using oxide semiconductor |
US8748886B2 (en) | 2011-07-08 | 2014-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US8952377B2 (en) | 2011-07-08 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9214474B2 (en) | 2011-07-08 | 2015-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9200952B2 (en) | 2011-07-15 | 2015-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a photodetector and an analog arithmetic circuit |
JP2013042117A (ja) | 2011-07-15 | 2013-02-28 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US8836626B2 (en) | 2011-07-15 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
US8847220B2 (en) | 2011-07-15 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8946812B2 (en) | 2011-07-21 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2013015091A1 (en) | 2011-07-22 | 2013-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
US9012993B2 (en) | 2011-07-22 | 2015-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8716073B2 (en) | 2011-07-22 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing oxide semiconductor film and method for manufacturing semiconductor device |
US8643008B2 (en) | 2011-07-22 | 2014-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6013685B2 (ja) | 2011-07-22 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8994019B2 (en) | 2011-08-05 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8718224B2 (en) | 2011-08-05 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Pulse signal output circuit and shift register |
JP6006572B2 (ja) | 2011-08-18 | 2016-10-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI575494B (zh) | 2011-08-19 | 2017-03-21 | 半導體能源研究所股份有限公司 | 半導體裝置的驅動方法 |
JP6128775B2 (ja) | 2011-08-19 | 2017-05-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6116149B2 (ja) | 2011-08-24 | 2017-04-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
EP3499446A1 (en) | 2011-08-29 | 2019-06-19 | AiBuy, Inc. | Containerized software for virally copying from one endpoint to another |
TW202412006A (zh) | 2011-08-29 | 2024-03-16 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
US9252279B2 (en) | 2011-08-31 | 2016-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9660092B2 (en) | 2011-08-31 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor thin film transistor including oxygen release layer |
US8845189B2 (en) * | 2011-08-31 | 2014-09-30 | Semiconductor Components Industries, Llc | Device identification and temperature sensor circuit |
US8821012B2 (en) | 2011-08-31 | 2014-09-02 | Semiconductor Components Industries, Llc | Combined device identification and temperature measurement |
JP6016532B2 (ja) | 2011-09-07 | 2016-10-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6050054B2 (ja) | 2011-09-09 | 2016-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8802493B2 (en) | 2011-09-13 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of oxide semiconductor device |
JP5825744B2 (ja) | 2011-09-15 | 2015-12-02 | 株式会社半導体エネルギー研究所 | パワー絶縁ゲート型電界効果トランジスタ |
US8952379B2 (en) | 2011-09-16 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9082663B2 (en) | 2011-09-16 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2013039126A1 (en) | 2011-09-16 | 2013-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5832399B2 (ja) | 2011-09-16 | 2015-12-16 | 株式会社半導体エネルギー研究所 | 発光装置 |
CN103022012B (zh) | 2011-09-21 | 2017-03-01 | 株式会社半导体能源研究所 | 半导体存储装置 |
KR101976228B1 (ko) | 2011-09-22 | 2019-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 광 검출 장치 및 광 검출 장치의 구동 방법 |
WO2013042562A1 (en) | 2011-09-22 | 2013-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8841675B2 (en) | 2011-09-23 | 2014-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Minute transistor |
US9431545B2 (en) | 2011-09-23 | 2016-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR102108572B1 (ko) | 2011-09-26 | 2020-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
EP2760782A4 (en) | 2011-09-28 | 2015-08-19 | Univ Connecticut | METAL OXIDE NANOTIDE NETWORKS ON MONOLITHIC SUBSTRATES |
JP2013084333A (ja) | 2011-09-28 | 2013-05-09 | Semiconductor Energy Lab Co Ltd | シフトレジスタ回路 |
KR101506303B1 (ko) | 2011-09-29 | 2015-03-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제작 방법 |
CN103843146B (zh) | 2011-09-29 | 2016-03-16 | 株式会社半导体能源研究所 | 半导体器件 |
US8716708B2 (en) | 2011-09-29 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN106847929B (zh) | 2011-09-29 | 2020-06-23 | 株式会社半导体能源研究所 | 半导体装置 |
US8982607B2 (en) | 2011-09-30 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Memory element and signal processing circuit |
JP5806905B2 (ja) | 2011-09-30 | 2015-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US20130087784A1 (en) | 2011-10-05 | 2013-04-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2013093561A (ja) | 2011-10-07 | 2013-05-16 | Semiconductor Energy Lab Co Ltd | 酸化物半導体膜及び半導体装置 |
JP2013093565A (ja) | 2011-10-07 | 2013-05-16 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP6022880B2 (ja) | 2011-10-07 | 2016-11-09 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
JP5912394B2 (ja) | 2011-10-13 | 2016-04-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9018629B2 (en) | 2011-10-13 | 2015-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9117916B2 (en) | 2011-10-13 | 2015-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor film |
US8637864B2 (en) | 2011-10-13 | 2014-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP6026839B2 (ja) | 2011-10-13 | 2016-11-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9287405B2 (en) | 2011-10-13 | 2016-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor |
SG10201601757UA (en) | 2011-10-14 | 2016-04-28 | Semiconductor Energy Lab | Semiconductor device |
KR20130040706A (ko) | 2011-10-14 | 2013-04-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR20130043063A (ko) | 2011-10-19 | 2013-04-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
TWI567985B (zh) | 2011-10-21 | 2017-01-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
JP6226518B2 (ja) | 2011-10-24 | 2017-11-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR101976212B1 (ko) | 2011-10-24 | 2019-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
JP6045285B2 (ja) | 2011-10-24 | 2016-12-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP6082562B2 (ja) | 2011-10-27 | 2017-02-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR20130046357A (ko) | 2011-10-27 | 2013-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2013061895A1 (en) | 2011-10-28 | 2013-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8604472B2 (en) | 2011-11-09 | 2013-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5933895B2 (ja) | 2011-11-10 | 2016-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置および半導体装置の作製方法 |
US8878177B2 (en) | 2011-11-11 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US8796682B2 (en) | 2011-11-11 | 2014-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
JP6076038B2 (ja) | 2011-11-11 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
KR101984739B1 (ko) | 2011-11-11 | 2019-05-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 신호선 구동 회로 및 액정 표시 장치 |
US9082861B2 (en) | 2011-11-11 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Transistor with oxide semiconductor channel having protective layer |
JP6122275B2 (ja) | 2011-11-11 | 2017-04-26 | 株式会社半導体エネルギー研究所 | 表示装置 |
US8969130B2 (en) | 2011-11-18 | 2015-03-03 | Semiconductor Energy Laboratory Co., Ltd. | Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof |
KR20130055521A (ko) | 2011-11-18 | 2013-05-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 소자, 및 반도체 소자의 제작 방법, 및 반도체 소자를 포함하는 반도체 장치 |
JP6059968B2 (ja) | 2011-11-25 | 2017-01-11 | 株式会社半導体エネルギー研究所 | 半導体装置、及び液晶表示装置 |
JP6099368B2 (ja) | 2011-11-25 | 2017-03-22 | 株式会社半導体エネルギー研究所 | 記憶装置 |
US8962386B2 (en) | 2011-11-25 | 2015-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP6125211B2 (ja) | 2011-11-25 | 2017-05-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8951899B2 (en) | 2011-11-25 | 2015-02-10 | Semiconductor Energy Laboratory | Method for manufacturing semiconductor device |
US9057126B2 (en) | 2011-11-29 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing sputtering target and method for manufacturing semiconductor device |
US9076871B2 (en) | 2011-11-30 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
TWI556319B (zh) | 2011-11-30 | 2016-11-01 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
CN103137701B (zh) | 2011-11-30 | 2018-01-19 | 株式会社半导体能源研究所 | 晶体管及半导体装置 |
KR102072244B1 (ko) | 2011-11-30 | 2020-01-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
TWI639150B (zh) | 2011-11-30 | 2018-10-21 | 日商半導體能源研究所股份有限公司 | 半導體顯示裝置 |
US20130137232A1 (en) | 2011-11-30 | 2013-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming oxide semiconductor film and method for manufacturing semiconductor device |
TWI621185B (zh) | 2011-12-01 | 2018-04-11 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
US8981367B2 (en) | 2011-12-01 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6050662B2 (ja) | 2011-12-02 | 2016-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
JP2013137853A (ja) | 2011-12-02 | 2013-07-11 | Semiconductor Energy Lab Co Ltd | 記憶装置および記憶装置の駆動方法 |
WO2013080900A1 (en) | 2011-12-02 | 2013-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9257422B2 (en) | 2011-12-06 | 2016-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing circuit and method for driving signal processing circuit |
US9076505B2 (en) | 2011-12-09 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
US8829514B2 (en) | 2011-12-14 | 2014-09-09 | E Ink Holdings Inc. | Thin film transistor and method for manufacturing the same |
US10002968B2 (en) | 2011-12-14 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
WO2013089115A1 (en) | 2011-12-15 | 2013-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP6105266B2 (ja) | 2011-12-15 | 2017-03-29 | 株式会社半導体エネルギー研究所 | 記憶装置 |
JP2013149953A (ja) | 2011-12-20 | 2013-08-01 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
US8785258B2 (en) | 2011-12-20 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8748240B2 (en) | 2011-12-22 | 2014-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8907392B2 (en) | 2011-12-22 | 2014-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device including stacked sub memory cells |
JP2013130802A (ja) | 2011-12-22 | 2013-07-04 | Semiconductor Energy Lab Co Ltd | 半導体装置、画像表示装置、記憶装置、及び電子機器 |
WO2013094547A1 (en) | 2011-12-23 | 2013-06-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
TWI580189B (zh) | 2011-12-23 | 2017-04-21 | 半導體能源研究所股份有限公司 | 位準位移電路及半導體積體電路 |
TWI569446B (zh) | 2011-12-23 | 2017-02-01 | 半導體能源研究所股份有限公司 | 半導體元件、半導體元件的製造方法、及包含半導體元件的半導體裝置 |
TWI613824B (zh) | 2011-12-23 | 2018-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
JP6053490B2 (ja) | 2011-12-23 | 2016-12-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP6012450B2 (ja) | 2011-12-23 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置の駆動方法 |
US8704221B2 (en) | 2011-12-23 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6033071B2 (ja) | 2011-12-23 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2013099537A1 (en) | 2011-12-26 | 2013-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Motion recognition device |
KR102100425B1 (ko) | 2011-12-27 | 2020-04-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
TWI584383B (zh) | 2011-12-27 | 2017-05-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
KR102103913B1 (ko) | 2012-01-10 | 2020-04-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
JP2013168926A (ja) | 2012-01-18 | 2013-08-29 | Semiconductor Energy Lab Co Ltd | 回路、センサ回路及びセンサ回路を用いた半導体装置 |
US8969867B2 (en) | 2012-01-18 | 2015-03-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9040981B2 (en) | 2012-01-20 | 2015-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9099560B2 (en) | 2012-01-20 | 2015-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9653614B2 (en) | 2012-01-23 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR102433736B1 (ko) | 2012-01-23 | 2022-08-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR102295888B1 (ko) | 2012-01-25 | 2021-08-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US9006733B2 (en) | 2012-01-26 | 2015-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing thereof |
JP6091905B2 (ja) | 2012-01-26 | 2017-03-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI605597B (zh) | 2012-01-26 | 2017-11-11 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
US9419146B2 (en) | 2012-01-26 | 2016-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8956912B2 (en) | 2012-01-26 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
TWI561951B (en) | 2012-01-30 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Power supply circuit |
TWI604609B (zh) | 2012-02-02 | 2017-11-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
KR102101167B1 (ko) | 2012-02-03 | 2020-04-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9362417B2 (en) | 2012-02-03 | 2016-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9196741B2 (en) | 2012-02-03 | 2015-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8916424B2 (en) | 2012-02-07 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9859114B2 (en) | 2012-02-08 | 2018-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor device with an oxygen-controlling insulating layer |
US9112037B2 (en) | 2012-02-09 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6125850B2 (ja) | 2012-02-09 | 2017-05-10 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
JP5981157B2 (ja) | 2012-02-09 | 2016-08-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US20130207111A1 (en) | 2012-02-09 | 2013-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device |
US8817516B2 (en) | 2012-02-17 | 2014-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Memory circuit and semiconductor device |
JP2014063557A (ja) | 2012-02-24 | 2014-04-10 | Semiconductor Energy Lab Co Ltd | 記憶装置及び半導体装置 |
US20130221345A1 (en) | 2012-02-28 | 2013-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP6151530B2 (ja) | 2012-02-29 | 2017-06-21 | 株式会社半導体エネルギー研究所 | イメージセンサ、カメラ、及び監視システム |
JP6220526B2 (ja) | 2012-02-29 | 2017-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8988152B2 (en) | 2012-02-29 | 2015-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9312257B2 (en) | 2012-02-29 | 2016-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2013183001A (ja) | 2012-03-01 | 2013-09-12 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US8975917B2 (en) | 2012-03-01 | 2015-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
JP6046514B2 (ja) | 2012-03-01 | 2016-12-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9176571B2 (en) | 2012-03-02 | 2015-11-03 | Semiconductor Energy Laboratories Co., Ltd. | Microprocessor and method for driving microprocessor |
US9735280B2 (en) | 2012-03-02 | 2017-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film |
US9287370B2 (en) | 2012-03-02 | 2016-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Memory device comprising a transistor including an oxide semiconductor and semiconductor device including the same |
JP6100559B2 (ja) | 2012-03-05 | 2017-03-22 | 株式会社半導体エネルギー研究所 | 半導体記憶装置 |
JP6041707B2 (ja) | 2012-03-05 | 2016-12-14 | 株式会社半導体エネルギー研究所 | ラッチ回路および半導体装置 |
US8995218B2 (en) | 2012-03-07 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8981370B2 (en) | 2012-03-08 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2013133143A1 (en) | 2012-03-09 | 2013-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving semiconductor device |
CN104170001B (zh) | 2012-03-13 | 2017-03-01 | 株式会社半导体能源研究所 | 发光装置及其驱动方法 |
JP6168795B2 (ja) | 2012-03-14 | 2017-07-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US9058892B2 (en) | 2012-03-14 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and shift register |
KR102108248B1 (ko) | 2012-03-14 | 2020-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막, 트랜지스터, 및 반도체 장치 |
US9117409B2 (en) | 2012-03-14 | 2015-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting display device with transistor and capacitor discharging gate of driving electrode and oxide semiconductor layer |
US9541386B2 (en) | 2012-03-21 | 2017-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Distance measurement device and distance measurement system |
US9349849B2 (en) | 2012-03-28 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device including the semiconductor device |
US9324449B2 (en) | 2012-03-28 | 2016-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device |
JP6169376B2 (ja) | 2012-03-28 | 2017-07-26 | 株式会社半導体エネルギー研究所 | 電池管理ユニット、保護回路、蓄電装置 |
JP2013229013A (ja) | 2012-03-29 | 2013-11-07 | Semiconductor Energy Lab Co Ltd | アレイコントローラ及びストレージシステム |
KR102044725B1 (ko) | 2012-03-29 | 2019-11-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전원 제어 장치 |
US9786793B2 (en) | 2012-03-29 | 2017-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor layer including regions with different concentrations of resistance-reducing elements |
JP6139187B2 (ja) | 2012-03-29 | 2017-05-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8941113B2 (en) | 2012-03-30 | 2015-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element, semiconductor device, and manufacturing method of semiconductor element |
US8999773B2 (en) | 2012-04-05 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Processing method of stacked-layer film and manufacturing method of semiconductor device |
US9711110B2 (en) | 2012-04-06 | 2017-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device comprising grayscale conversion portion and display portion |
JP2013232885A (ja) | 2012-04-06 | 2013-11-14 | Semiconductor Energy Lab Co Ltd | 半導体リレー |
US8901556B2 (en) | 2012-04-06 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Insulating film, method for manufacturing semiconductor device, and semiconductor device |
KR101268696B1 (ko) * | 2012-04-06 | 2013-05-29 | 고려대학교 산학협력단 | 투명 기판 또는 플렉시블 기판을 이용한 투명 또는 플렉서블한 비휘발성 메모리 소자 제조 방법 |
US9793444B2 (en) | 2012-04-06 | 2017-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
JP5975907B2 (ja) | 2012-04-11 | 2016-08-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9208849B2 (en) | 2012-04-12 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving semiconductor device, and electronic device |
US9276121B2 (en) | 2012-04-12 | 2016-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP6059566B2 (ja) | 2012-04-13 | 2017-01-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
SG10201610711UA (en) | 2012-04-13 | 2017-02-27 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
US9030232B2 (en) | 2012-04-13 | 2015-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Isolator circuit and semiconductor device |
JP6128906B2 (ja) | 2012-04-13 | 2017-05-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6143423B2 (ja) | 2012-04-16 | 2017-06-07 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
JP6076612B2 (ja) | 2012-04-17 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6001308B2 (ja) | 2012-04-17 | 2016-10-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9219164B2 (en) | 2012-04-20 | 2015-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with oxide semiconductor channel |
US9029863B2 (en) | 2012-04-20 | 2015-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9006024B2 (en) | 2012-04-25 | 2015-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9230683B2 (en) | 2012-04-25 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
US9236408B2 (en) | 2012-04-25 | 2016-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor device including photodiode |
US9285848B2 (en) | 2012-04-27 | 2016-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Power reception control device, power reception device, power transmission and reception system, and electronic device |
JP6199583B2 (ja) | 2012-04-27 | 2017-09-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8860022B2 (en) | 2012-04-27 | 2014-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
US9331689B2 (en) | 2012-04-27 | 2016-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Power supply circuit and semiconductor device including the same |
JP6228381B2 (ja) | 2012-04-30 | 2017-11-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9048323B2 (en) | 2012-04-30 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6100071B2 (ja) | 2012-04-30 | 2017-03-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US9703704B2 (en) | 2012-05-01 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9007090B2 (en) | 2012-05-01 | 2015-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of driving semiconductor device |
JP6035195B2 (ja) | 2012-05-01 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US9261943B2 (en) | 2012-05-02 | 2016-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
US8866510B2 (en) | 2012-05-02 | 2014-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6227890B2 (ja) | 2012-05-02 | 2017-11-08 | 株式会社半導体エネルギー研究所 | 信号処理回路および制御回路 |
JP6100076B2 (ja) | 2012-05-02 | 2017-03-22 | 株式会社半導体エネルギー研究所 | プロセッサ |
KR102025722B1 (ko) | 2012-05-02 | 2019-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 온도 센서 회로, 및 온도 센서 회로를 사용한 반도체 장치 |
JP6243136B2 (ja) | 2012-05-02 | 2017-12-06 | 株式会社半導体エネルギー研究所 | スイッチングコンバータ |
KR101978932B1 (ko) | 2012-05-02 | 2019-05-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 프로그램 가능한 로직 디바이스 |
KR20130125717A (ko) | 2012-05-09 | 2013-11-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 구동 방법 |
KR102069158B1 (ko) | 2012-05-10 | 2020-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 배선의 형성 방법, 반도체 장치, 및 반도체 장치의 제작 방법 |
KR20210109658A (ko) | 2012-05-10 | 2021-09-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 디바이스 |
KR102380379B1 (ko) | 2012-05-10 | 2022-04-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR102087443B1 (ko) | 2012-05-11 | 2020-03-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 구동 방법 |
DE102013022449B3 (de) | 2012-05-11 | 2019-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung und elektronisches Gerät |
US8994891B2 (en) | 2012-05-16 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and touch panel |
US8929128B2 (en) | 2012-05-17 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Storage device and writing method of the same |
US9817032B2 (en) | 2012-05-23 | 2017-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Measurement device |
KR102164990B1 (ko) | 2012-05-25 | 2020-10-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억 소자의 구동 방법 |
JP6250955B2 (ja) | 2012-05-25 | 2017-12-20 | 株式会社半導体エネルギー研究所 | 半導体装置の駆動方法 |
JP6050721B2 (ja) | 2012-05-25 | 2016-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CN104321967B (zh) | 2012-05-25 | 2018-01-09 | 株式会社半导体能源研究所 | 可编程逻辑装置及半导体装置 |
JP2014003594A (ja) | 2012-05-25 | 2014-01-09 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその駆動方法 |
US9147706B2 (en) | 2012-05-29 | 2015-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having sensor circuit having amplifier circuit |
JP6377317B2 (ja) | 2012-05-30 | 2018-08-22 | 株式会社半導体エネルギー研究所 | プログラマブルロジックデバイス |
US8995607B2 (en) | 2012-05-31 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Pulse signal output circuit and shift register |
JP6158588B2 (ja) | 2012-05-31 | 2017-07-05 | 株式会社半導体エネルギー研究所 | 発光装置 |
CN107591316B (zh) | 2012-05-31 | 2021-06-08 | 株式会社半导体能源研究所 | 半导体装置 |
KR102119914B1 (ko) | 2012-05-31 | 2020-06-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
US9048265B2 (en) | 2012-05-31 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising oxide semiconductor layer |
US8785928B2 (en) | 2012-05-31 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20150023547A (ko) | 2012-06-01 | 2015-03-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 디바이스 및 경보 장치 |
US8872174B2 (en) | 2012-06-01 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
US9135182B2 (en) | 2012-06-01 | 2015-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Central processing unit and driving method thereof |
US9916793B2 (en) | 2012-06-01 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving the same |
US9343120B2 (en) | 2012-06-01 | 2016-05-17 | Semiconductor Energy Laboratory Co., Ltd. | High speed processing unit with non-volatile register |
US8901557B2 (en) | 2012-06-15 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2014027263A (ja) | 2012-06-15 | 2014-02-06 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
US9607330B2 (en) | 2012-06-21 | 2017-03-28 | Cinsay, Inc. | Peer-assisted shopping |
US10789631B2 (en) | 2012-06-21 | 2020-09-29 | Aibuy, Inc. | Apparatus and method for peer-assisted e-commerce shopping |
US9059219B2 (en) | 2012-06-27 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
KR102099445B1 (ko) | 2012-06-29 | 2020-04-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR102315695B1 (ko) | 2012-06-29 | 2021-10-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR102082794B1 (ko) | 2012-06-29 | 2020-02-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치의 구동 방법, 및 표시 장치 |
US8873308B2 (en) | 2012-06-29 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing circuit |
KR102161077B1 (ko) | 2012-06-29 | 2020-09-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9742378B2 (en) | 2012-06-29 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Pulse output circuit and semiconductor device |
JP6060972B2 (ja) * | 2012-07-05 | 2017-01-18 | 株式会社ニコン | 酸化亜鉛薄膜の製造方法、薄膜トランジスタの製造方法および透明酸化物配線の製造方法 |
US9083327B2 (en) | 2012-07-06 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving semiconductor device |
US9190525B2 (en) | 2012-07-06 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor layer |
US9054678B2 (en) | 2012-07-06 | 2015-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
KR102099262B1 (ko) | 2012-07-11 | 2020-04-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치, 및 액정 표시 장치의 구동 방법 |
JP2014032399A (ja) | 2012-07-13 | 2014-02-20 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
JP6006558B2 (ja) | 2012-07-17 | 2016-10-12 | 株式会社半導体エネルギー研究所 | 半導体装置及びその製造方法 |
JP6185311B2 (ja) | 2012-07-20 | 2017-08-23 | 株式会社半導体エネルギー研究所 | 電源制御回路、及び信号処理回路 |
KR102081468B1 (ko) | 2012-07-20 | 2020-02-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치, 및 표시 장치를 포함하는 전자 장치 |
DE112013007837B3 (de) | 2012-07-20 | 2023-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Anzeigevorrichtung |
KR102262323B1 (ko) | 2012-07-20 | 2021-06-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제조 방법 |
KR20140013931A (ko) | 2012-07-26 | 2014-02-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 |
JP2014042004A (ja) | 2012-07-26 | 2014-03-06 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
JP6224931B2 (ja) | 2012-07-27 | 2017-11-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6134598B2 (ja) | 2012-08-02 | 2017-05-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2014045175A (ja) | 2012-08-02 | 2014-03-13 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
EP2880690B1 (en) | 2012-08-03 | 2019-02-27 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device with oxide semiconductor stacked film |
CN108054175A (zh) | 2012-08-03 | 2018-05-18 | 株式会社半导体能源研究所 | 半导体装置 |
US9885108B2 (en) | 2012-08-07 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming sputtering target |
US10557192B2 (en) | 2012-08-07 | 2020-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for using sputtering target and method for forming oxide film |
CN104584229B (zh) | 2012-08-10 | 2018-05-15 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
JP2014057296A (ja) | 2012-08-10 | 2014-03-27 | Semiconductor Energy Lab Co Ltd | 半導体装置の駆動方法 |
US9245958B2 (en) | 2012-08-10 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR102099261B1 (ko) | 2012-08-10 | 2020-04-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
JP2014057298A (ja) | 2012-08-10 | 2014-03-27 | Semiconductor Energy Lab Co Ltd | 半導体装置の駆動方法 |
TWI581404B (zh) | 2012-08-10 | 2017-05-01 | 半導體能源研究所股份有限公司 | 半導體裝置以及該半導體裝置的驅動方法 |
JP6220597B2 (ja) | 2012-08-10 | 2017-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR102171650B1 (ko) | 2012-08-10 | 2020-10-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
US9929276B2 (en) | 2012-08-10 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8937307B2 (en) | 2012-08-10 | 2015-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2014199899A (ja) | 2012-08-10 | 2014-10-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8872120B2 (en) | 2012-08-23 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and method for driving the same |
KR102069683B1 (ko) | 2012-08-24 | 2020-01-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 방사선 검출 패널, 방사선 촬상 장치, 및 화상 진단 장치 |
KR102161078B1 (ko) | 2012-08-28 | 2020-09-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 제작 방법 |
DE102013216824A1 (de) | 2012-08-28 | 2014-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
KR20140029202A (ko) | 2012-08-28 | 2014-03-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
US9625764B2 (en) | 2012-08-28 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
TWI575663B (zh) | 2012-08-31 | 2017-03-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
SG11201504939RA (en) | 2012-09-03 | 2015-07-30 | Semiconductor Energy Lab | Microcontroller |
US8947158B2 (en) | 2012-09-03 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
DE102013217278B4 (de) | 2012-09-12 | 2017-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Photodetektorschaltung, Bildgebungsvorrichtung und Verfahren zum Ansteuern einer Photodetektorschaltung |
US8981372B2 (en) | 2012-09-13 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic appliance |
KR102484987B1 (ko) | 2012-09-13 | 2023-01-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
US9018624B2 (en) | 2012-09-13 | 2015-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic appliance |
TWI831522B (zh) | 2012-09-14 | 2024-02-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
US8927985B2 (en) | 2012-09-20 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2014046222A1 (en) | 2012-09-24 | 2014-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
TWI671910B (zh) | 2012-09-24 | 2019-09-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
JP6044332B2 (ja) * | 2012-09-27 | 2016-12-14 | 株式会社ニコン | 針状酸化亜鉛結晶を備えた物品の製造方法、電界効果トランジスタの製造方法、電子デバイスの製造方法 |
JP6351947B2 (ja) | 2012-10-12 | 2018-07-04 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
TWI681233B (zh) | 2012-10-12 | 2020-01-01 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置、觸控面板及液晶顯示裝置的製造方法 |
JP6290576B2 (ja) | 2012-10-12 | 2018-03-07 | 株式会社半導体エネルギー研究所 | 液晶表示装置及びその駆動方法 |
KR102226090B1 (ko) | 2012-10-12 | 2021-03-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 및 반도체 장치의 제조 장치 |
US9166021B2 (en) | 2012-10-17 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2014061762A1 (en) | 2012-10-17 | 2014-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
TWI591966B (zh) | 2012-10-17 | 2017-07-11 | 半導體能源研究所股份有限公司 | 可編程邏輯裝置及可編程邏輯裝置的驅動方法 |
JP2014082388A (ja) | 2012-10-17 | 2014-05-08 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP5951442B2 (ja) | 2012-10-17 | 2016-07-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6283191B2 (ja) | 2012-10-17 | 2018-02-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2014061535A1 (en) | 2012-10-17 | 2014-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6021586B2 (ja) | 2012-10-17 | 2016-11-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2014061567A1 (en) | 2012-10-17 | 2014-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
WO2014061761A1 (en) | 2012-10-17 | 2014-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Microcontroller and method for manufacturing the same |
JP6059501B2 (ja) | 2012-10-17 | 2017-01-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR102220279B1 (ko) | 2012-10-19 | 2021-02-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법 |
JP6204145B2 (ja) | 2012-10-23 | 2017-09-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6300489B2 (ja) | 2012-10-24 | 2018-03-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
WO2014065343A1 (en) | 2012-10-24 | 2014-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102130184B1 (ko) | 2012-10-24 | 2020-07-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
TWI637517B (zh) | 2012-10-24 | 2018-10-01 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
KR102279459B1 (ko) | 2012-10-24 | 2021-07-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
WO2014065389A1 (en) | 2012-10-25 | 2014-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Central control system |
JP6219562B2 (ja) | 2012-10-30 | 2017-10-25 | 株式会社半導体エネルギー研究所 | 表示装置及び電子機器 |
WO2014073374A1 (en) | 2012-11-06 | 2014-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
CN109065553A (zh) | 2012-11-08 | 2018-12-21 | 株式会社半导体能源研究所 | 金属氧化物膜及金属氧化物膜的形成方法 |
TWI605593B (zh) | 2012-11-15 | 2017-11-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
TWI608616B (zh) | 2012-11-15 | 2017-12-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
JP6220641B2 (ja) | 2012-11-15 | 2017-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI620323B (zh) | 2012-11-16 | 2018-04-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
JP6317059B2 (ja) | 2012-11-16 | 2018-04-25 | 株式会社半導体エネルギー研究所 | 半導体装置及び表示装置 |
TWI613813B (zh) | 2012-11-16 | 2018-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
JP6285150B2 (ja) | 2012-11-16 | 2018-02-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9412764B2 (en) | 2012-11-28 | 2016-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device, and electronic device |
US9263531B2 (en) | 2012-11-28 | 2016-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film, film formation method thereof, and semiconductor device |
TWI627483B (zh) | 2012-11-28 | 2018-06-21 | 半導體能源研究所股份有限公司 | 顯示裝置及電視接收機 |
WO2014084153A1 (en) | 2012-11-28 | 2014-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
TWI757837B (zh) | 2012-11-28 | 2022-03-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置 |
CN116207143A (zh) | 2012-11-30 | 2023-06-02 | 株式会社半导体能源研究所 | 半导体装置 |
US9594281B2 (en) | 2012-11-30 | 2017-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US9246011B2 (en) | 2012-11-30 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2014130336A (ja) | 2012-11-30 | 2014-07-10 | Semiconductor Energy Lab Co Ltd | 表示装置 |
TWI582993B (zh) | 2012-11-30 | 2017-05-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
US9153649B2 (en) | 2012-11-30 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for evaluating semiconductor device |
JP6320009B2 (ja) | 2012-12-03 | 2018-05-09 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
KR102207028B1 (ko) | 2012-12-03 | 2021-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9406810B2 (en) | 2012-12-03 | 2016-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP6254834B2 (ja) | 2012-12-06 | 2017-12-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9577446B2 (en) | 2012-12-13 | 2017-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Power storage system and power storage device storing data for the identifying power storage device |
TWI611419B (zh) | 2012-12-24 | 2018-01-11 | 半導體能源研究所股份有限公司 | 可程式邏輯裝置及半導體裝置 |
KR102241249B1 (ko) | 2012-12-25 | 2021-04-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 저항 소자, 표시 장치, 및 전자기기 |
US9905585B2 (en) | 2012-12-25 | 2018-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising capacitor |
DE112013006219T5 (de) | 2012-12-25 | 2015-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung und deren Herstellungsverfahren |
KR102209871B1 (ko) | 2012-12-25 | 2021-02-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2014142986A (ja) | 2012-12-26 | 2014-08-07 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2014143410A (ja) | 2012-12-28 | 2014-08-07 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
TWI607510B (zh) | 2012-12-28 | 2017-12-01 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
US9316695B2 (en) | 2012-12-28 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2014104267A1 (en) | 2012-12-28 | 2014-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6329762B2 (ja) | 2012-12-28 | 2018-05-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CN110137181A (zh) | 2012-12-28 | 2019-08-16 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
US9391096B2 (en) | 2013-01-18 | 2016-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
TWI614813B (zh) | 2013-01-21 | 2018-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
US9190172B2 (en) | 2013-01-24 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
TWI619010B (zh) | 2013-01-24 | 2018-03-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
JP5807076B2 (ja) | 2013-01-24 | 2015-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9466725B2 (en) | 2013-01-24 | 2016-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP6223198B2 (ja) | 2013-01-24 | 2017-11-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9076825B2 (en) | 2013-01-30 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
TWI593025B (zh) | 2013-01-30 | 2017-07-21 | 半導體能源研究所股份有限公司 | 氧化物半導體層的處理方法 |
US8981374B2 (en) | 2013-01-30 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
TWI618252B (zh) | 2013-02-12 | 2018-03-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
KR102112367B1 (ko) | 2013-02-12 | 2020-05-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR102125593B1 (ko) | 2013-02-13 | 2020-06-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 프로그래머블 로직 디바이스 및 반도체 장치 |
US9231111B2 (en) | 2013-02-13 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9190527B2 (en) | 2013-02-13 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
US8952723B2 (en) | 2013-02-13 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device and semiconductor device |
US9318484B2 (en) | 2013-02-20 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
TWI611566B (zh) | 2013-02-25 | 2018-01-11 | 半導體能源研究所股份有限公司 | 顯示裝置和電子裝置 |
US9293544B2 (en) | 2013-02-26 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having buried channel structure |
TWI611567B (zh) | 2013-02-27 | 2018-01-11 | 半導體能源研究所股份有限公司 | 半導體裝置、驅動電路及顯示裝置 |
TWI612321B (zh) | 2013-02-27 | 2018-01-21 | 半導體能源研究所股份有限公司 | 成像裝置 |
US9373711B2 (en) | 2013-02-27 | 2016-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102238682B1 (ko) | 2013-02-28 | 2021-04-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치와 그 제작 방법 |
JP2014195241A (ja) | 2013-02-28 | 2014-10-09 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2014195243A (ja) | 2013-02-28 | 2014-10-09 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP6141777B2 (ja) | 2013-02-28 | 2017-06-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US9276125B2 (en) | 2013-03-01 | 2016-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP2014195060A (ja) | 2013-03-01 | 2014-10-09 | Semiconductor Energy Lab Co Ltd | センサ回路及びセンサ回路を用いた半導体装置 |
KR102153110B1 (ko) | 2013-03-06 | 2020-09-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체막 및 반도체 장치 |
US9269315B2 (en) | 2013-03-08 | 2016-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of semiconductor device |
US8947121B2 (en) | 2013-03-12 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
TWI644433B (zh) | 2013-03-13 | 2018-12-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
JP2014199709A (ja) | 2013-03-14 | 2014-10-23 | 株式会社半導体エネルギー研究所 | 記憶装置、半導体装置 |
JP6283237B2 (ja) | 2013-03-14 | 2018-02-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR20150128823A (ko) | 2013-03-14 | 2015-11-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 구동 방법 및 반도체 장치 |
JP6298662B2 (ja) | 2013-03-14 | 2018-03-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR20150128820A (ko) | 2013-03-14 | 2015-11-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 구동 방법 및 반도체 장치 |
KR102290247B1 (ko) | 2013-03-14 | 2021-08-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치와 그 제작 방법 |
US9294075B2 (en) | 2013-03-14 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9245650B2 (en) | 2013-03-15 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9786350B2 (en) | 2013-03-18 | 2017-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
US9153650B2 (en) | 2013-03-19 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor |
US9577107B2 (en) | 2013-03-19 | 2017-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and method for forming oxide semiconductor film |
US9007092B2 (en) | 2013-03-22 | 2015-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6355374B2 (ja) | 2013-03-22 | 2018-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP6093726B2 (ja) | 2013-03-22 | 2017-03-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6272713B2 (ja) | 2013-03-25 | 2018-01-31 | 株式会社半導体エネルギー研究所 | プログラマブルロジックデバイス及び半導体装置 |
US10347769B2 (en) | 2013-03-25 | 2019-07-09 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with multi-layer source/drain electrodes |
WO2014157019A1 (en) | 2013-03-25 | 2014-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6316630B2 (ja) | 2013-03-26 | 2018-04-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6376788B2 (ja) | 2013-03-26 | 2018-08-22 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
JP6395409B2 (ja) | 2013-03-27 | 2018-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
JP2014209209A (ja) | 2013-03-28 | 2014-11-06 | 株式会社半導体エネルギー研究所 | 表示装置 |
US9368636B2 (en) | 2013-04-01 | 2016-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device comprising a plurality of oxide semiconductor layers |
JP6300589B2 (ja) | 2013-04-04 | 2018-03-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US9112460B2 (en) | 2013-04-05 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing device |
JP6224338B2 (ja) | 2013-04-11 | 2017-11-01 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置及び半導体装置の作製方法 |
JP6198434B2 (ja) | 2013-04-11 | 2017-09-20 | 株式会社半導体エネルギー研究所 | 表示装置及び電子機器 |
TWI620324B (zh) | 2013-04-12 | 2018-04-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
JP6280794B2 (ja) | 2013-04-12 | 2018-02-14 | 株式会社半導体エネルギー研究所 | 半導体装置及びその駆動方法 |
US10304859B2 (en) | 2013-04-12 | 2019-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide film on an oxide semiconductor film |
JP6333028B2 (ja) | 2013-04-19 | 2018-05-30 | 株式会社半導体エネルギー研究所 | 記憶装置及び半導体装置 |
JP6456598B2 (ja) | 2013-04-19 | 2019-01-23 | 株式会社半導体エネルギー研究所 | 表示装置 |
US9915848B2 (en) | 2013-04-19 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
WO2014175296A1 (en) | 2013-04-24 | 2014-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US9893192B2 (en) | 2013-04-24 | 2018-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6401483B2 (ja) | 2013-04-26 | 2018-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP6396671B2 (ja) | 2013-04-26 | 2018-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI644434B (zh) | 2013-04-29 | 2018-12-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
TWI631711B (zh) | 2013-05-01 | 2018-08-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
KR102222344B1 (ko) | 2013-05-02 | 2021-03-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9231002B2 (en) | 2013-05-03 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
US9882058B2 (en) | 2013-05-03 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2014181785A1 (en) | 2013-05-09 | 2014-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9704894B2 (en) | 2013-05-10 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device including pixel electrode including oxide |
US9246476B2 (en) | 2013-05-10 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit |
TWI621337B (zh) | 2013-05-14 | 2018-04-11 | 半導體能源研究所股份有限公司 | 信號處理裝置 |
TWI690085B (zh) | 2013-05-16 | 2020-04-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
US9312392B2 (en) | 2013-05-16 | 2016-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
TWI618058B (zh) | 2013-05-16 | 2018-03-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
TWI809474B (zh) | 2013-05-16 | 2023-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
JP6298353B2 (ja) | 2013-05-17 | 2018-03-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9209795B2 (en) | 2013-05-17 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing device and measuring method |
US10032872B2 (en) | 2013-05-17 | 2018-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, and apparatus for manufacturing semiconductor device |
TWI638519B (zh) | 2013-05-17 | 2018-10-11 | 半導體能源研究所股份有限公司 | 可程式邏輯裝置及半導體裝置 |
US9754971B2 (en) | 2013-05-18 | 2017-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9293599B2 (en) | 2013-05-20 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR102537022B1 (ko) | 2013-05-20 | 2023-05-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9343579B2 (en) | 2013-05-20 | 2016-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
SG10201707381WA (en) | 2013-05-20 | 2017-10-30 | Semiconductor Energy Lab | Semiconductor device |
US9647125B2 (en) | 2013-05-20 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
TWI664731B (zh) | 2013-05-20 | 2019-07-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
DE102014208859B4 (de) | 2013-05-20 | 2021-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
WO2014188983A1 (en) | 2013-05-21 | 2014-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and formation method thereof |
US10416504B2 (en) | 2013-05-21 | 2019-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
TWI687748B (zh) | 2013-06-05 | 2020-03-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置及電子裝置 |
US9806198B2 (en) | 2013-06-05 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP2015195327A (ja) | 2013-06-05 | 2015-11-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6475424B2 (ja) | 2013-06-05 | 2019-02-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI624936B (zh) | 2013-06-05 | 2018-05-21 | 半導體能源研究所股份有限公司 | 顯示裝置 |
JP6400336B2 (ja) | 2013-06-05 | 2018-10-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR102108121B1 (ko) | 2013-06-10 | 2020-05-08 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 |
US9773915B2 (en) | 2013-06-11 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
TWI641112B (zh) | 2013-06-13 | 2018-11-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
JP6368155B2 (ja) | 2013-06-18 | 2018-08-01 | 株式会社半導体エネルギー研究所 | プログラマブルロジックデバイス |
TWI652822B (zh) | 2013-06-19 | 2019-03-01 | 日商半導體能源研究所股份有限公司 | 氧化物半導體膜及其形成方法 |
US9035301B2 (en) | 2013-06-19 | 2015-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device |
TWI633650B (zh) | 2013-06-21 | 2018-08-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
US9515094B2 (en) | 2013-06-26 | 2016-12-06 | Semiconductor Energy Laboratory Co., Ltd. | Storage device and semiconductor device |
KR20210079411A (ko) | 2013-06-27 | 2021-06-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP6352070B2 (ja) | 2013-07-05 | 2018-07-04 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9666697B2 (en) | 2013-07-08 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device including an electron trap layer |
US20150008428A1 (en) | 2013-07-08 | 2015-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
JP6435124B2 (ja) | 2013-07-08 | 2018-12-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US9424950B2 (en) | 2013-07-10 | 2016-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9293480B2 (en) | 2013-07-10 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
US9818763B2 (en) | 2013-07-12 | 2017-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing display device |
JP6018607B2 (ja) | 2013-07-12 | 2016-11-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6322503B2 (ja) | 2013-07-16 | 2018-05-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6516978B2 (ja) | 2013-07-17 | 2019-05-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI621130B (zh) | 2013-07-18 | 2018-04-11 | 半導體能源研究所股份有限公司 | 半導體裝置及用於製造半導體裝置之方法 |
US9379138B2 (en) | 2013-07-19 | 2016-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device with drive voltage dependent on external light intensity |
TWI608523B (zh) | 2013-07-19 | 2017-12-11 | 半導體能源研究所股份有限公司 | Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device |
US9395070B2 (en) | 2013-07-19 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Support of flexible component and light-emitting device |
TWI636309B (zh) | 2013-07-25 | 2018-09-21 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置及電子裝置 |
TWI632688B (zh) | 2013-07-25 | 2018-08-11 | 半導體能源研究所股份有限公司 | 半導體裝置以及半導體裝置的製造方法 |
US10529740B2 (en) | 2013-07-25 | 2020-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including semiconductor layer and conductive layer |
TWI641208B (zh) | 2013-07-26 | 2018-11-11 | 日商半導體能源研究所股份有限公司 | 直流對直流轉換器 |
JP6410496B2 (ja) | 2013-07-31 | 2018-10-24 | 株式会社半導体エネルギー研究所 | マルチゲート構造のトランジスタ |
US9343288B2 (en) | 2013-07-31 | 2016-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6460592B2 (ja) | 2013-07-31 | 2019-01-30 | 株式会社半導体エネルギー研究所 | Dcdcコンバータ、及び半導体装置 |
TWI635750B (zh) | 2013-08-02 | 2018-09-11 | 半導體能源研究所股份有限公司 | 攝像裝置以及其工作方法 |
US9496330B2 (en) | 2013-08-02 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
JP2015053477A (ja) | 2013-08-05 | 2015-03-19 | 株式会社半導体エネルギー研究所 | 半導体装置および半導体装置の作製方法 |
JP6345023B2 (ja) | 2013-08-07 | 2018-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
US9601591B2 (en) | 2013-08-09 | 2017-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9299855B2 (en) | 2013-08-09 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having dual gate insulating layers |
JP6329843B2 (ja) | 2013-08-19 | 2018-05-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9374048B2 (en) | 2013-08-20 | 2016-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing device, and driving method and program thereof |
TWI643435B (zh) | 2013-08-21 | 2018-12-01 | 日商半導體能源研究所股份有限公司 | 電荷泵電路以及具備電荷泵電路的半導體裝置 |
KR102232133B1 (ko) | 2013-08-22 | 2021-03-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9443987B2 (en) | 2013-08-23 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102244553B1 (ko) | 2013-08-23 | 2021-04-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 용량 소자 및 반도체 장치 |
TWI803081B (zh) | 2013-08-28 | 2023-05-21 | 日商半導體能源研究所股份有限公司 | 顯示裝置 |
US9590109B2 (en) | 2013-08-30 | 2017-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9552767B2 (en) | 2013-08-30 | 2017-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
JP6426402B2 (ja) | 2013-08-30 | 2018-11-21 | 株式会社半導体エネルギー研究所 | 表示装置 |
WO2015030150A1 (en) | 2013-08-30 | 2015-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Storage circuit and semiconductor device |
US9360564B2 (en) | 2013-08-30 | 2016-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device |
US9449853B2 (en) | 2013-09-04 | 2016-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising electron trap layer |
JP6406926B2 (ja) | 2013-09-04 | 2018-10-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US10008513B2 (en) | 2013-09-05 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6345544B2 (ja) | 2013-09-05 | 2018-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US9607991B2 (en) | 2013-09-05 | 2017-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102294507B1 (ko) | 2013-09-06 | 2021-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP6401977B2 (ja) | 2013-09-06 | 2018-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9590110B2 (en) | 2013-09-10 | 2017-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Ultraviolet light sensor circuit |
CA2921995A1 (en) | 2013-09-11 | 2015-03-19 | Cinsay, Inc. | Dynamic binding of content transactional items |
TWI640014B (zh) | 2013-09-11 | 2018-11-01 | 半導體能源研究所股份有限公司 | 記憶體裝置、半導體裝置及電子裝置 |
US9269822B2 (en) | 2013-09-12 | 2016-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9893194B2 (en) | 2013-09-12 | 2018-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
TWI646690B (zh) | 2013-09-13 | 2019-01-01 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
JP2015079946A (ja) | 2013-09-13 | 2015-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US9461126B2 (en) | 2013-09-13 | 2016-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, clocked inverter circuit, sequential circuit, and semiconductor device including sequential circuit |
KR102307142B1 (ko) | 2013-09-13 | 2021-09-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
US9805952B2 (en) | 2013-09-13 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9887297B2 (en) | 2013-09-17 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor layer in which thickness of the oxide semiconductor layer is greater than or equal to width of the oxide semiconductor layer |
JP6347704B2 (ja) | 2013-09-18 | 2018-06-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9269915B2 (en) | 2013-09-18 | 2016-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
TWI677989B (zh) | 2013-09-19 | 2019-11-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
US9425217B2 (en) | 2013-09-23 | 2016-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2015084418A (ja) | 2013-09-23 | 2015-04-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6570817B2 (ja) | 2013-09-23 | 2019-09-04 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI678740B (zh) | 2013-09-23 | 2019-12-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
JP6383616B2 (ja) | 2013-09-25 | 2018-08-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR102213515B1 (ko) | 2013-09-26 | 2021-02-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 스위치 회로, 반도체 장치, 및 시스템 |
JP6392603B2 (ja) | 2013-09-27 | 2018-09-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CN105580042B (zh) | 2013-09-27 | 2022-03-11 | 艾拜公司 | 用于支持与内容供应相关联的关系的装置和方法 |
EP3049954A4 (en) | 2013-09-27 | 2017-04-05 | Cinsay, Inc. | N-level replication of supplemental content |
JP6581765B2 (ja) | 2013-10-02 | 2019-09-25 | 株式会社半導体エネルギー研究所 | ブートストラップ回路、およびブートストラップ回路を有する半導体装置 |
JP6386323B2 (ja) | 2013-10-04 | 2018-09-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TW202339281A (zh) | 2013-10-10 | 2023-10-01 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置 |
KR102183763B1 (ko) | 2013-10-11 | 2020-11-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
JP6591739B2 (ja) | 2013-10-16 | 2019-10-16 | 株式会社半導体エネルギー研究所 | 演算処理装置の駆動方法 |
TWI621127B (zh) | 2013-10-18 | 2018-04-11 | 半導體能源研究所股份有限公司 | 運算處理裝置及其驅動方法 |
TWI642170B (zh) | 2013-10-18 | 2018-11-21 | 半導體能源研究所股份有限公司 | 顯示裝置及電子裝置 |
DE102014220672A1 (de) | 2013-10-22 | 2015-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
CN110571278A (zh) | 2013-10-22 | 2019-12-13 | 株式会社半导体能源研究所 | 半导体装置 |
WO2015060133A1 (en) | 2013-10-22 | 2015-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9455349B2 (en) | 2013-10-22 | 2016-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor thin film transistor with reduced impurity diffusion |
CN105659370A (zh) | 2013-10-22 | 2016-06-08 | 株式会社半导体能源研究所 | 显示装置 |
JP2015179247A (ja) | 2013-10-22 | 2015-10-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2015109424A (ja) | 2013-10-22 | 2015-06-11 | 株式会社半導体エネルギー研究所 | 半導体装置、該半導体装置の作製方法、及び該半導体装置に用いるエッチング溶液 |
US9583516B2 (en) | 2013-10-25 | 2017-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
JP6457239B2 (ja) | 2013-10-31 | 2019-01-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
GB201319263D0 (en) * | 2013-10-31 | 2013-12-18 | Montanuniversit T Leoben | Method of manufacturing an electrically conductive or semiconductive structure and electronic device comprising the same |
US9590111B2 (en) | 2013-11-06 | 2017-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
JP6440457B2 (ja) | 2013-11-07 | 2018-12-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6478562B2 (ja) | 2013-11-07 | 2019-03-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9385054B2 (en) | 2013-11-08 | 2016-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Data processing device and manufacturing method thereof |
JP2015118724A (ja) | 2013-11-13 | 2015-06-25 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の駆動方法 |
JP6393590B2 (ja) | 2013-11-22 | 2018-09-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6426437B2 (ja) | 2013-11-22 | 2018-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6486660B2 (ja) | 2013-11-27 | 2019-03-20 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2016001712A (ja) | 2013-11-29 | 2016-01-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US9882014B2 (en) | 2013-11-29 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US20150155313A1 (en) | 2013-11-29 | 2015-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102264987B1 (ko) | 2013-12-02 | 2021-06-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR20240068746A (ko) | 2013-12-02 | 2024-05-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 제조방법 |
US9601634B2 (en) | 2013-12-02 | 2017-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9991392B2 (en) | 2013-12-03 | 2018-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2016027597A (ja) | 2013-12-06 | 2016-02-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9627413B2 (en) | 2013-12-12 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
US9349751B2 (en) | 2013-12-12 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
TWI642186B (zh) | 2013-12-18 | 2018-11-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
TWI666770B (zh) | 2013-12-19 | 2019-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
JP6444714B2 (ja) | 2013-12-20 | 2018-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US9379192B2 (en) | 2013-12-20 | 2016-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102283814B1 (ko) | 2013-12-25 | 2021-07-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP6402017B2 (ja) | 2013-12-26 | 2018-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9960280B2 (en) | 2013-12-26 | 2018-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20240042562A (ko) | 2013-12-26 | 2024-04-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
TWI637484B (zh) | 2013-12-26 | 2018-10-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
WO2015097596A1 (en) | 2013-12-26 | 2015-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9397149B2 (en) | 2013-12-27 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102320576B1 (ko) | 2013-12-27 | 2021-11-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9577110B2 (en) | 2013-12-27 | 2017-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including an oxide semiconductor and the display device including the semiconductor device |
US9349418B2 (en) | 2013-12-27 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
WO2015097595A1 (en) | 2013-12-27 | 2015-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
JP6506545B2 (ja) | 2013-12-27 | 2019-04-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6488124B2 (ja) | 2013-12-27 | 2019-03-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6446258B2 (ja) | 2013-12-27 | 2018-12-26 | 株式会社半導体エネルギー研究所 | トランジスタ |
JP6506961B2 (ja) | 2013-12-27 | 2019-04-24 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP6444723B2 (ja) | 2014-01-09 | 2018-12-26 | 株式会社半導体エネルギー研究所 | 装置 |
US9300292B2 (en) | 2014-01-10 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Circuit including transistor |
US9401432B2 (en) | 2014-01-16 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US9379713B2 (en) | 2014-01-17 | 2016-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Data processing device and driving method thereof |
KR102306200B1 (ko) | 2014-01-24 | 2021-09-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2015114476A1 (en) | 2014-01-28 | 2015-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9929044B2 (en) | 2014-01-30 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US9443876B2 (en) | 2014-02-05 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module |
JP6523695B2 (ja) | 2014-02-05 | 2019-06-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI665778B (zh) | 2014-02-05 | 2019-07-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置、模組及電子裝置 |
US9929279B2 (en) | 2014-02-05 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP6473626B2 (ja) | 2014-02-06 | 2019-02-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2015165226A (ja) | 2014-02-07 | 2015-09-17 | 株式会社半導体エネルギー研究所 | 装置 |
JP6420165B2 (ja) | 2014-02-07 | 2018-11-07 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6545970B2 (ja) | 2014-02-07 | 2019-07-17 | 株式会社半導体エネルギー研究所 | 装置 |
JP6534530B2 (ja) | 2014-02-07 | 2019-06-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CN105960633B (zh) | 2014-02-07 | 2020-06-19 | 株式会社半导体能源研究所 | 半导体装置、装置及电子设备 |
TWI658597B (zh) | 2014-02-07 | 2019-05-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
TWI803431B (zh) | 2014-02-11 | 2023-05-21 | 日商半導體能源研究所股份有限公司 | 顯示裝置及電子裝置 |
KR102317297B1 (ko) | 2014-02-19 | 2021-10-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물, 반도체 장치, 모듈, 및 전자 장치 |
JP6506566B2 (ja) | 2014-02-21 | 2019-04-24 | 株式会社半導体エネルギー研究所 | 電流測定方法 |
JP2015172991A (ja) | 2014-02-21 | 2015-10-01 | 株式会社半導体エネルギー研究所 | 半導体装置、電子部品、及び電子機器 |
JP6629509B2 (ja) | 2014-02-21 | 2020-01-15 | 株式会社半導体エネルギー研究所 | 酸化物半導体膜 |
WO2015128774A1 (en) | 2014-02-28 | 2015-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
US9564535B2 (en) | 2014-02-28 | 2017-02-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module |
US10074576B2 (en) | 2014-02-28 | 2018-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
US9294096B2 (en) | 2014-02-28 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6542542B2 (ja) | 2014-02-28 | 2019-07-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6474280B2 (ja) | 2014-03-05 | 2019-02-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR20150104518A (ko) | 2014-03-05 | 2015-09-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 레벨 시프터 회로 |
JP6625328B2 (ja) | 2014-03-06 | 2019-12-25 | 株式会社半導体エネルギー研究所 | 半導体装置の駆動方法 |
US9537478B2 (en) | 2014-03-06 | 2017-01-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9397637B2 (en) | 2014-03-06 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Voltage controlled oscillator, semiconductor device, and electronic device |
US10096489B2 (en) | 2014-03-06 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9419622B2 (en) | 2014-03-07 | 2016-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9711536B2 (en) | 2014-03-07 | 2017-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic component, and electronic device |
WO2015132694A1 (en) | 2014-03-07 | 2015-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Touch sensor, touch panel, and manufacturing method of touch panel |
JP6585354B2 (ja) | 2014-03-07 | 2019-10-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9653611B2 (en) | 2014-03-07 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9443872B2 (en) | 2014-03-07 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6442321B2 (ja) | 2014-03-07 | 2018-12-19 | 株式会社半導体エネルギー研究所 | 半導体装置及びその駆動方法、並びに電子機器 |
KR102267237B1 (ko) | 2014-03-07 | 2021-06-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
WO2015132697A1 (en) | 2014-03-07 | 2015-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2015136413A1 (en) | 2014-03-12 | 2015-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6677449B2 (ja) | 2014-03-13 | 2020-04-08 | 株式会社半導体エネルギー研究所 | 半導体装置の駆動方法 |
JP6560508B2 (ja) | 2014-03-13 | 2019-08-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6541376B2 (ja) | 2014-03-13 | 2019-07-10 | 株式会社半導体エネルギー研究所 | プログラマブルロジックデバイスの動作方法 |
US9640669B2 (en) | 2014-03-13 | 2017-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module |
US9324747B2 (en) | 2014-03-13 | 2016-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device |
JP6525421B2 (ja) | 2014-03-13 | 2019-06-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2015136418A1 (en) | 2014-03-13 | 2015-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device |
KR102252213B1 (ko) | 2014-03-14 | 2021-05-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 회로 시스템 |
US10361290B2 (en) | 2014-03-14 | 2019-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising adding oxygen to buffer film and insulating film |
JP2015188071A (ja) | 2014-03-14 | 2015-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9299848B2 (en) | 2014-03-14 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, RF tag, and electronic device |
US9887212B2 (en) | 2014-03-14 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
JP6509596B2 (ja) | 2014-03-18 | 2019-05-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR20160132982A (ko) | 2014-03-18 | 2016-11-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치와 그 제작 방법 |
US9887291B2 (en) | 2014-03-19 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, or the display module |
US9842842B2 (en) | 2014-03-19 | 2017-12-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device and semiconductor device and electronic device having the same |
TWI657488B (zh) | 2014-03-20 | 2019-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置、具有該半導體裝置的顯示裝置、具有該顯示裝置的顯示模組以及具有該半導體裝置、該顯示裝置和該顯示模組的電子裝置 |
JP6495698B2 (ja) | 2014-03-20 | 2019-04-03 | 株式会社半導体エネルギー研究所 | 半導体装置、電子部品、及び電子機器 |
KR102400212B1 (ko) | 2014-03-28 | 2022-05-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 및 반도체 장치 |
JP6487738B2 (ja) | 2014-03-31 | 2019-03-20 | 株式会社半導体エネルギー研究所 | 半導体装置、電子部品 |
TWI695375B (zh) | 2014-04-10 | 2020-06-01 | 日商半導體能源研究所股份有限公司 | 記憶體裝置及半導體裝置 |
US9082794B1 (en) * | 2014-04-10 | 2015-07-14 | The United States Of America As Represented By The Secretary Of The Air Force | Metal oxide thin film transistor fabrication method |
JP6541398B2 (ja) | 2014-04-11 | 2019-07-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6635670B2 (ja) | 2014-04-11 | 2020-01-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI646782B (zh) | 2014-04-11 | 2019-01-01 | 日商半導體能源研究所股份有限公司 | 保持電路、保持電路的驅動方法以及包括保持電路的半導體裝置 |
US9674470B2 (en) | 2014-04-11 | 2017-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for driving semiconductor device, and method for driving electronic device |
KR20160144492A (ko) | 2014-04-18 | 2016-12-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 장치 |
KR102511325B1 (ko) | 2014-04-18 | 2023-03-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 동작 방법 |
US9768315B2 (en) | 2014-04-18 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device having the same |
JP6613044B2 (ja) | 2014-04-22 | 2019-11-27 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、及び電子機器 |
KR102380829B1 (ko) | 2014-04-23 | 2022-03-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 |
TWI643457B (zh) | 2014-04-25 | 2018-12-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
KR102330412B1 (ko) | 2014-04-25 | 2021-11-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전자 부품, 및 전자 기기 |
US9780226B2 (en) | 2014-04-25 | 2017-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP6468686B2 (ja) | 2014-04-25 | 2019-02-13 | 株式会社半導体エネルギー研究所 | 入出力装置 |
US10043913B2 (en) | 2014-04-30 | 2018-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film, semiconductor device, display device, module, and electronic device |
TWI679624B (zh) | 2014-05-02 | 2019-12-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
US10656799B2 (en) | 2014-05-02 | 2020-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and operation method thereof |
JP6537341B2 (ja) | 2014-05-07 | 2019-07-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6653997B2 (ja) | 2014-05-09 | 2020-02-26 | 株式会社半導体エネルギー研究所 | 表示補正回路及び表示装置 |
KR102333604B1 (ko) | 2014-05-15 | 2021-11-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 이 반도체 장치를 포함하는 표시 장치 |
JP2015233130A (ja) | 2014-05-16 | 2015-12-24 | 株式会社半導体エネルギー研究所 | 半導体基板および半導体装置の作製方法 |
JP6612056B2 (ja) | 2014-05-16 | 2019-11-27 | 株式会社半導体エネルギー研究所 | 撮像装置、及び監視装置 |
JP6580863B2 (ja) | 2014-05-22 | 2019-09-25 | 株式会社半導体エネルギー研究所 | 半導体装置、健康管理システム |
JP6616102B2 (ja) | 2014-05-23 | 2019-12-04 | 株式会社半導体エネルギー研究所 | 記憶装置及び電子機器 |
TWI672804B (zh) | 2014-05-23 | 2019-09-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
KR20170003674A (ko) * | 2014-05-27 | 2017-01-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
US10020403B2 (en) | 2014-05-27 | 2018-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9874775B2 (en) | 2014-05-28 | 2018-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
KR20150138026A (ko) | 2014-05-29 | 2015-12-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP6615490B2 (ja) | 2014-05-29 | 2019-12-04 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
JP6525722B2 (ja) | 2014-05-29 | 2019-06-05 | 株式会社半導体エネルギー研究所 | 記憶装置、電子部品、及び電子機器 |
KR102418666B1 (ko) | 2014-05-29 | 2022-07-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 소자, 전자 기기, 촬상 소자의 구동 방법, 및 전자 기기의 구동 방법 |
JP6653129B2 (ja) | 2014-05-29 | 2020-02-26 | 株式会社半導体エネルギー研究所 | 記憶装置 |
JP6537892B2 (ja) | 2014-05-30 | 2019-07-03 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
JP6538426B2 (ja) | 2014-05-30 | 2019-07-03 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
US9831238B2 (en) | 2014-05-30 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including insulating film having opening portion and conductive film in the opening portion |
KR102398950B1 (ko) | 2014-05-30 | 2022-05-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 이의 제조 방법, 및 전자 장치 |
TWI646658B (zh) | 2014-05-30 | 2019-01-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
TWI663726B (zh) | 2014-05-30 | 2019-06-21 | Semiconductor Energy Laboratory Co., Ltd. | 半導體裝置、模組及電子裝置 |
KR102373263B1 (ko) | 2014-05-30 | 2022-03-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 이를 제조하기 위한 방법 |
JP2016015475A (ja) | 2014-06-13 | 2016-01-28 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
KR102344782B1 (ko) | 2014-06-13 | 2021-12-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 입력 장치 및 입출력 장치 |
WO2015189731A1 (en) | 2014-06-13 | 2015-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device including the semiconductor device |
TWI663733B (zh) | 2014-06-18 | 2019-06-21 | 日商半導體能源研究所股份有限公司 | 電晶體及半導體裝置 |
KR20150146409A (ko) | 2014-06-20 | 2015-12-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 장치, 입출력 장치, 및 전자 기기 |
TWI666776B (zh) | 2014-06-20 | 2019-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置以及包括該半導體裝置的顯示裝置 |
US9722090B2 (en) | 2014-06-23 | 2017-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including first gate oxide semiconductor film, and second gate |
JP6545541B2 (ja) | 2014-06-25 | 2019-07-17 | 株式会社半導体エネルギー研究所 | 撮像装置、監視装置、及び電子機器 |
US10002971B2 (en) | 2014-07-03 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
US9647129B2 (en) | 2014-07-04 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9461179B2 (en) | 2014-07-11 | 2016-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor device (TFT) comprising stacked oxide semiconductor layers and having a surrounded channel structure |
CN106537604B (zh) | 2014-07-15 | 2020-09-11 | 株式会社半导体能源研究所 | 半导体装置及其制造方法以及包括该半导体装置的显示装置 |
JP6581825B2 (ja) | 2014-07-18 | 2019-09-25 | 株式会社半導体エネルギー研究所 | 表示システム |
KR102422059B1 (ko) | 2014-07-18 | 2022-07-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 촬상 장치, 및 전자 기기 |
US9312280B2 (en) | 2014-07-25 | 2016-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102352633B1 (ko) | 2014-07-25 | 2022-01-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발진 회로 및 그것을 포함하는 반도체 장치 |
US10115830B2 (en) | 2014-07-29 | 2018-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and electronic device |
JP6555956B2 (ja) | 2014-07-31 | 2019-08-07 | 株式会社半導体エネルギー研究所 | 撮像装置、監視装置、及び電子機器 |
WO2016016765A1 (en) | 2014-07-31 | 2016-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
US9705004B2 (en) | 2014-08-01 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9595955B2 (en) | 2014-08-08 | 2017-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including power storage elements and switches |
JP6553444B2 (ja) | 2014-08-08 | 2019-07-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6652342B2 (ja) | 2014-08-08 | 2020-02-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US10147747B2 (en) | 2014-08-21 | 2018-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and electronic device |
US10032888B2 (en) | 2014-08-22 | 2018-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing semiconductor device, and electronic appliance having semiconductor device |
US10559667B2 (en) | 2014-08-25 | 2020-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for measuring current of semiconductor device |
KR102388997B1 (ko) | 2014-08-29 | 2022-04-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 및 전자 기기 |
KR102393272B1 (ko) | 2014-09-02 | 2022-05-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 및 전자 기기 |
KR102329498B1 (ko) | 2014-09-04 | 2021-11-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9766517B2 (en) | 2014-09-05 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and display module |
JP2016066065A (ja) | 2014-09-05 | 2016-04-28 | 株式会社半導体エネルギー研究所 | 表示装置、および電子機器 |
JP6676316B2 (ja) | 2014-09-12 | 2020-04-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US9722091B2 (en) | 2014-09-12 | 2017-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
KR102513878B1 (ko) | 2014-09-19 | 2023-03-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
JP2016066788A (ja) | 2014-09-19 | 2016-04-28 | 株式会社半導体エネルギー研究所 | 半導体膜の評価方法および半導体装置の作製方法 |
US9401364B2 (en) | 2014-09-19 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic component, and electronic device |
KR20160034200A (ko) | 2014-09-19 | 2016-03-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
US10071904B2 (en) | 2014-09-25 | 2018-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display module, and electronic device |
JP2016111677A (ja) | 2014-09-26 | 2016-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置、無線センサ、及び電子機器 |
US10170055B2 (en) | 2014-09-26 | 2019-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method thereof |
WO2016046685A1 (en) | 2014-09-26 | 2016-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device |
US10141342B2 (en) | 2014-09-26 | 2018-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
US9450581B2 (en) | 2014-09-30 | 2016-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit, semiconductor device, electronic component, and electronic device |
KR20170068511A (ko) | 2014-10-06 | 2017-06-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
US9698170B2 (en) | 2014-10-07 | 2017-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display module, and electronic device |
CN112671388B (zh) | 2014-10-10 | 2024-07-05 | 株式会社半导体能源研究所 | 逻辑电路、处理单元、电子构件以及电子设备 |
WO2016055903A1 (en) | 2014-10-10 | 2016-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, circuit board, and electronic device |
US9991393B2 (en) | 2014-10-16 | 2018-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, module, and electronic device |
JP6645793B2 (ja) | 2014-10-17 | 2020-02-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
GB201418610D0 (en) * | 2014-10-20 | 2014-12-03 | Cambridge Entpr Ltd | Transistor devices |
WO2016063159A1 (en) | 2014-10-20 | 2016-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof, module, and electronic device |
US10068927B2 (en) | 2014-10-23 | 2018-09-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display module, and electronic device |
JP6615565B2 (ja) | 2014-10-24 | 2019-12-04 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9704704B2 (en) | 2014-10-28 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
TWI652362B (zh) | 2014-10-28 | 2019-03-01 | 日商半導體能源研究所股份有限公司 | 氧化物及其製造方法 |
WO2016067144A1 (en) | 2014-10-28 | 2016-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device, manufacturing method of display device, and electronic device |
US9793905B2 (en) | 2014-10-31 | 2017-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10680017B2 (en) | 2014-11-07 | 2020-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element including EL layer, electrode which has high reflectance and a high work function, display device, electronic device, and lighting device |
US9548327B2 (en) | 2014-11-10 | 2017-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device having a selenium containing photoelectric conversion layer |
US9584707B2 (en) | 2014-11-10 | 2017-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
US9438234B2 (en) | 2014-11-21 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit and semiconductor device including logic circuit |
JP6563313B2 (ja) | 2014-11-21 | 2019-08-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
TWI699897B (zh) | 2014-11-21 | 2020-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
TWI711165B (zh) | 2014-11-21 | 2020-11-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及電子裝置 |
TWI669819B (zh) | 2014-11-28 | 2019-08-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置、模組以及電子裝置 |
JP6647841B2 (ja) | 2014-12-01 | 2020-02-14 | 株式会社半導体エネルギー研究所 | 酸化物の作製方法 |
JP6613116B2 (ja) | 2014-12-02 | 2019-11-27 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
JP6667267B2 (ja) | 2014-12-08 | 2020-03-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6647846B2 (ja) | 2014-12-08 | 2020-02-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6833315B2 (ja) | 2014-12-10 | 2021-02-24 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
WO2016092427A1 (en) | 2014-12-10 | 2016-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9773832B2 (en) | 2014-12-10 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
JP6689062B2 (ja) | 2014-12-10 | 2020-04-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2016092416A1 (en) | 2014-12-11 | 2016-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, and electronic device |
JP2016116220A (ja) | 2014-12-16 | 2016-06-23 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
JP6676354B2 (ja) | 2014-12-16 | 2020-04-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI791952B (zh) | 2014-12-18 | 2023-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置、感測裝置和電子裝置 |
US10396210B2 (en) | 2014-12-26 | 2019-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with stacked metal oxide and oxide semiconductor layers and display device including the semiconductor device |
KR20170101233A (ko) | 2014-12-26 | 2017-09-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 스퍼터링용 타깃의 제작 방법 |
TWI686874B (zh) | 2014-12-26 | 2020-03-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置、顯示裝置、顯示模組、電子裝置、氧化物及氧化物的製造方法 |
KR20170098839A (ko) | 2014-12-29 | 2017-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치를 가지는 표시 장치 |
US10522693B2 (en) | 2015-01-16 | 2019-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and electronic device |
JP6857447B2 (ja) | 2015-01-26 | 2021-04-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9954112B2 (en) | 2015-01-26 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9443564B2 (en) | 2015-01-26 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic component, and electronic device |
WO2016120742A1 (ja) * | 2015-01-27 | 2016-08-04 | 株式会社半導体エネルギー研究所 | 乗員保護装置 |
US9647132B2 (en) | 2015-01-30 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and memory device |
TWI710124B (zh) | 2015-01-30 | 2020-11-11 | 日商半導體能源研究所股份有限公司 | 成像裝置及電子裝置 |
CN107207252B (zh) | 2015-02-02 | 2021-04-30 | 株式会社半导体能源研究所 | 氧化物及其制造方法 |
KR102669385B1 (ko) | 2015-02-04 | 2024-05-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 반도체 장치의 제조 방법, 또는 반도체 장치를 포함하는 표시 장치 |
TWI683365B (zh) | 2015-02-06 | 2020-01-21 | 日商半導體能源研究所股份有限公司 | 裝置及其製造方法以及電子裝置 |
US9660100B2 (en) | 2015-02-06 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP6717604B2 (ja) | 2015-02-09 | 2020-07-01 | 株式会社半導体エネルギー研究所 | 半導体装置、中央処理装置及び電子機器 |
US9954113B2 (en) | 2015-02-09 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Transistor including oxide semiconductor, semiconductor device including the transistor, and electronic device including the transistor |
TWI685113B (zh) | 2015-02-11 | 2020-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
JP2016154225A (ja) | 2015-02-12 | 2016-08-25 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
US10439068B2 (en) | 2015-02-12 | 2019-10-08 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
US9818880B2 (en) | 2015-02-12 | 2017-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
JP6758844B2 (ja) | 2015-02-13 | 2020-09-23 | 株式会社半導体エネルギー研究所 | 表示装置 |
US9991394B2 (en) | 2015-02-20 | 2018-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US9489988B2 (en) | 2015-02-20 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
US10403646B2 (en) | 2015-02-20 | 2019-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP6711642B2 (ja) | 2015-02-25 | 2020-06-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6739185B2 (ja) | 2015-02-26 | 2020-08-12 | 株式会社半導体エネルギー研究所 | ストレージシステム、およびストレージ制御回路 |
US9653613B2 (en) | 2015-02-27 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP6744108B2 (ja) | 2015-03-02 | 2020-08-19 | 株式会社半導体エネルギー研究所 | トランジスタ、トランジスタの作製方法、半導体装置および電子機器 |
TWI718125B (zh) | 2015-03-03 | 2021-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
KR102509582B1 (ko) | 2015-03-03 | 2023-03-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 그 제작 방법, 또는 그를 포함하는 표시 장치 |
WO2016139560A1 (en) | 2015-03-03 | 2016-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film, semiconductor device including the oxide semiconductor film, and display device including the semiconductor device |
JP6681117B2 (ja) | 2015-03-13 | 2020-04-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9964799B2 (en) | 2015-03-17 | 2018-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module, and electronic device |
CN114546158A (zh) | 2015-03-17 | 2022-05-27 | 株式会社半导体能源研究所 | 触摸屏 |
US10008609B2 (en) | 2015-03-17 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, or display device including the same |
US9882061B2 (en) | 2015-03-17 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2016177280A (ja) | 2015-03-18 | 2016-10-06 | 株式会社半導体エネルギー研究所 | 表示装置および電子機器、並びに表示装置の駆動方法 |
JP6662665B2 (ja) | 2015-03-19 | 2020-03-11 | 株式会社半導体エネルギー研究所 | 液晶表示装置及び該液晶表示装置を用いた電子機器 |
KR102582523B1 (ko) | 2015-03-19 | 2023-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
US10147823B2 (en) | 2015-03-19 | 2018-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9634048B2 (en) | 2015-03-24 | 2017-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
US9842938B2 (en) | 2015-03-24 | 2017-12-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including semiconductor device |
KR20160114511A (ko) | 2015-03-24 | 2016-10-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
US10096715B2 (en) | 2015-03-26 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, and electronic device |
US10429704B2 (en) | 2015-03-26 | 2019-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module including the display device, and electronic device including the display device or the display module |
TWI695513B (zh) | 2015-03-27 | 2020-06-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及電子裝置 |
JP6736321B2 (ja) | 2015-03-27 | 2020-08-05 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
US9806200B2 (en) | 2015-03-27 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
TW202316486A (zh) | 2015-03-30 | 2023-04-16 | 日商半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
US9716852B2 (en) | 2015-04-03 | 2017-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Broadcast system |
US10389961B2 (en) | 2015-04-09 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
KR102440302B1 (ko) | 2015-04-13 | 2022-09-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
US10372274B2 (en) | 2015-04-13 | 2019-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and touch panel |
US10460984B2 (en) | 2015-04-15 | 2019-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating electrode and semiconductor device |
US10056497B2 (en) | 2015-04-15 | 2018-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2016206659A (ja) | 2015-04-16 | 2016-12-08 | 株式会社半導体エネルギー研究所 | 表示装置および電子機器、並びに表示装置の駆動方法 |
US10192995B2 (en) | 2015-04-28 | 2019-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10002970B2 (en) | 2015-04-30 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method of the same, or display device including the same |
US10671204B2 (en) | 2015-05-04 | 2020-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Touch panel and data processor |
KR102549926B1 (ko) | 2015-05-04 | 2023-06-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 반도체 장치의 제작 방법, 및 전자기기 |
JP6681780B2 (ja) | 2015-05-07 | 2020-04-15 | 株式会社半導体エネルギー研究所 | 表示システムおよび電子機器 |
TWI693719B (zh) | 2015-05-11 | 2020-05-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
DE102016207737A1 (de) | 2015-05-11 | 2016-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung, Verfahren zum Herstellen der Halbleitervorrichtung, Reifen und beweglicher Gegenstand |
JP6935171B2 (ja) | 2015-05-14 | 2021-09-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US11728356B2 (en) | 2015-05-14 | 2023-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion element and imaging device |
US9627034B2 (en) | 2015-05-15 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
CN113990756A (zh) | 2015-05-22 | 2022-01-28 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
US9837547B2 (en) | 2015-05-22 | 2017-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide conductor and display device including the semiconductor device |
JP6773453B2 (ja) | 2015-05-26 | 2020-10-21 | 株式会社半導体エネルギー研究所 | 記憶装置及び電子機器 |
JP2016225614A (ja) | 2015-05-26 | 2016-12-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US10139663B2 (en) | 2015-05-29 | 2018-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Input/output device and electronic device |
KR102553553B1 (ko) | 2015-06-12 | 2023-07-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치, 및 그 동작 방법 및 전자 기기 |
DE112016002769T5 (de) | 2015-06-19 | 2018-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung, Herstellungsverfahren dafür und elektronisches Gerät |
US9860465B2 (en) | 2015-06-23 | 2018-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
US9935633B2 (en) | 2015-06-30 | 2018-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit, semiconductor device, electronic component, and electronic device |
US10290573B2 (en) | 2015-07-02 | 2019-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US9917209B2 (en) | 2015-07-03 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device including step of forming trench over semiconductor |
KR102548001B1 (ko) | 2015-07-08 | 2023-06-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
JP2017022377A (ja) | 2015-07-14 | 2017-01-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US10501003B2 (en) | 2015-07-17 | 2019-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, lighting device, and vehicle |
US10985278B2 (en) | 2015-07-21 | 2021-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US11189736B2 (en) | 2015-07-24 | 2021-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US11024725B2 (en) | 2015-07-24 | 2021-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including metal oxide film |
US10978489B2 (en) | 2015-07-24 | 2021-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display panel, method for manufacturing semiconductor device, method for manufacturing display panel, and information processing device |
US10424671B2 (en) | 2015-07-29 | 2019-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, circuit board, and electronic device |
CN106409919A (zh) | 2015-07-30 | 2017-02-15 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
US10585506B2 (en) | 2015-07-30 | 2020-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device with high visibility regardless of illuminance of external light |
US9825177B2 (en) | 2015-07-30 | 2017-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of a semiconductor device using multiple etching mask |
JP6802656B2 (ja) | 2015-07-30 | 2020-12-16 | 株式会社半導体エネルギー研究所 | メモリセルの作製方法及び半導体装置の作製方法 |
US9876946B2 (en) | 2015-08-03 | 2018-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
US9911861B2 (en) | 2015-08-03 | 2018-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method of the same, and electronic device |
JP6791661B2 (ja) | 2015-08-07 | 2020-11-25 | 株式会社半導体エネルギー研究所 | 表示パネル |
WO2017029576A1 (en) | 2015-08-19 | 2017-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US9666606B2 (en) | 2015-08-21 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
JP2017041877A (ja) | 2015-08-21 | 2017-02-23 | 株式会社半導体エネルギー研究所 | 半導体装置、電子部品、および電子機器 |
US9773919B2 (en) | 2015-08-26 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2017037564A1 (en) | 2015-08-28 | 2017-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor, transistor, and semiconductor device |
US9911756B2 (en) | 2015-08-31 | 2018-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor and electronic device surrounded by layer having assigned band gap to prevent electrostatic discharge damage |
JP2017050537A (ja) | 2015-08-31 | 2017-03-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6807683B2 (ja) | 2015-09-11 | 2021-01-06 | 株式会社半導体エネルギー研究所 | 入出力パネル |
SG10201607278TA (en) | 2015-09-18 | 2017-04-27 | Semiconductor Energy Lab Co Ltd | Semiconductor device and electronic device |
JP2017063420A (ja) | 2015-09-25 | 2017-03-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9935143B2 (en) | 2015-09-30 | 2018-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
WO2017064590A1 (en) | 2015-10-12 | 2017-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
WO2017064587A1 (en) | 2015-10-12 | 2017-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Display panel, input/output device, data processor, and method for manufacturing display panel |
US9852926B2 (en) | 2015-10-20 | 2017-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for semiconductor device |
CN107273973B (zh) | 2015-10-23 | 2022-07-05 | 株式会社半导体能源研究所 | 半导体装置及电子设备 |
JP2017102904A (ja) | 2015-10-23 | 2017-06-08 | 株式会社半導体エネルギー研究所 | 半導体装置および電子機器 |
US10007161B2 (en) | 2015-10-26 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
SG10201608814YA (en) | 2015-10-29 | 2017-05-30 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing the semiconductor device |
US9773787B2 (en) | 2015-11-03 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, electronic device, or method for driving the semiconductor device |
US9741400B2 (en) | 2015-11-05 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, electronic device, and method for operating the semiconductor device |
JP6796461B2 (ja) | 2015-11-18 | 2020-12-09 | 株式会社半導体エネルギー研究所 | 半導体装置、コンピュータ及び電子機器 |
JP2018032839A (ja) | 2015-12-11 | 2018-03-01 | 株式会社半導体エネルギー研究所 | トランジスタ、回路、半導体装置、表示装置および電子機器 |
US10868045B2 (en) | 2015-12-11 | 2020-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
JP2017112374A (ja) | 2015-12-16 | 2017-06-22 | 株式会社半導体エネルギー研究所 | トランジスタ、半導体装置、および電子機器 |
KR20180095836A (ko) | 2015-12-18 | 2018-08-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 상기 반도체 장치를 포함한 표시 장치 |
US10177142B2 (en) | 2015-12-25 | 2019-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Circuit, logic circuit, processor, electronic component, and electronic device |
CN114361180A (zh) | 2015-12-28 | 2022-04-15 | 株式会社半导体能源研究所 | 半导体装置、包括该半导体装置的显示装置 |
JP2017135698A (ja) | 2015-12-29 | 2017-08-03 | 株式会社半導体エネルギー研究所 | 半導体装置、コンピュータ及び電子機器 |
CN108473334B (zh) | 2015-12-29 | 2021-03-12 | 株式会社半导体能源研究所 | 金属氧化物膜以及半导体装置 |
JP6851814B2 (ja) | 2015-12-29 | 2021-03-31 | 株式会社半導体エネルギー研究所 | トランジスタ |
JP6827328B2 (ja) | 2016-01-15 | 2021-02-10 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
CN108474106B (zh) | 2016-01-18 | 2021-02-26 | 株式会社半导体能源研究所 | 金属氧化物膜、半导体装置以及显示装置 |
US9905657B2 (en) | 2016-01-20 | 2018-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9887010B2 (en) | 2016-01-21 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, and driving method thereof |
US10411013B2 (en) | 2016-01-22 | 2019-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and memory device |
US10700212B2 (en) | 2016-01-28 | 2020-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof |
US10115741B2 (en) | 2016-02-05 | 2018-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US10250247B2 (en) | 2016-02-10 | 2019-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic component, and electronic device |
WO2017137869A1 (en) | 2016-02-12 | 2017-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
JP6970511B2 (ja) | 2016-02-12 | 2021-11-24 | 株式会社半導体エネルギー研究所 | トランジスタ |
US9954003B2 (en) | 2016-02-17 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US10263114B2 (en) | 2016-03-04 | 2019-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, or display device including the same |
WO2017149428A1 (en) | 2016-03-04 | 2017-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and display device including the semiconductor device |
WO2017149413A1 (en) | 2016-03-04 | 2017-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP6904730B2 (ja) | 2016-03-08 | 2021-07-21 | 株式会社半導体エネルギー研究所 | 撮像装置 |
US9882064B2 (en) | 2016-03-10 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and electronic device |
US10096720B2 (en) | 2016-03-25 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
US10942408B2 (en) | 2016-04-01 | 2021-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Composite oxide semiconductor, semiconductor device using the composite oxide semiconductor, and display device including the semiconductor device |
WO2017178923A1 (en) | 2016-04-15 | 2017-10-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic component, and electronic device |
US10236875B2 (en) | 2016-04-15 | 2019-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for operating the semiconductor device |
KR102492209B1 (ko) | 2016-05-19 | 2023-01-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복합 산화물 반도체 및 트랜지스터 |
CN109196656B (zh) | 2016-06-03 | 2022-04-19 | 株式会社半导体能源研究所 | 金属氧化物及场效应晶体管 |
KR102330605B1 (ko) | 2016-06-22 | 2021-11-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US10411003B2 (en) | 2016-10-14 | 2019-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN114115609B (zh) | 2016-11-25 | 2024-09-03 | 株式会社半导体能源研究所 | 显示装置及其工作方法 |
WO2018223054A1 (en) | 2017-06-01 | 2018-12-06 | University Of Connecticut | Manganese-cobalt spinel oxide nanowire arrays |
WO2018223099A1 (en) | 2017-06-02 | 2018-12-06 | University Of Connecticut | Low-temperature diesel oxidation catalysts using tio2 nanowire arrays integrated on a monolithic substrate |
WO2018226543A1 (en) | 2017-06-06 | 2018-12-13 | University Of Connecticut | Microwave assisted and low-temperature fabrication of nanowire arrays on scalable 2d and 3d substrates |
JP7258754B2 (ja) | 2017-07-31 | 2023-04-17 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
JP6782211B2 (ja) * | 2017-09-08 | 2020-11-11 | 株式会社東芝 | 透明電極、それを用いた素子、および素子の製造方法 |
WO2019145803A1 (ja) | 2018-01-24 | 2019-08-01 | 株式会社半導体エネルギー研究所 | 半導体装置、電子部品、及び電子機器 |
WO2019175704A1 (ja) | 2018-03-16 | 2019-09-19 | 株式会社半導体エネルギー研究所 | 電気モジュール、表示パネル、表示装置、入出力装置、情報処理装置、電気モジュールの作製方法 |
US11610998B2 (en) | 2018-07-09 | 2023-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP7399857B2 (ja) | 2018-07-10 | 2023-12-18 | 株式会社半導体エネルギー研究所 | 二次電池の保護回路 |
WO2020128743A1 (ja) | 2018-12-20 | 2020-06-25 | 株式会社半導体エネルギー研究所 | 半導体装置および電池パック |
US12040007B2 (en) | 2019-04-26 | 2024-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
KR20220006541A (ko) | 2019-05-10 | 2022-01-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
US11948945B2 (en) | 2019-05-31 | 2024-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and wireless communication device with the semiconductor device |
CN112530978B (zh) * | 2020-12-01 | 2024-02-13 | 京东方科技集团股份有限公司 | 开关器件结构及其制备方法、薄膜晶体管膜层、显示面板 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5371026A (en) * | 1992-11-30 | 1994-12-06 | Motorola Inc. | Method for fabricating paired MOS transistors having a current-gain differential |
JP2002080205A (ja) * | 2000-09-08 | 2002-03-19 | Fuji Xerox Co Ltd | 金属酸化物微粒子凝集体製造用ゾル液、その製造方法、金属酸化物微粒子凝集体、及び該金属酸化物微粒子凝集体を用いた光電変換装置 |
US6444495B1 (en) * | 2001-01-11 | 2002-09-03 | Honeywell International, Inc. | Dielectric films for narrow gap-fill applications |
JP2003179242A (ja) | 2001-12-12 | 2003-06-27 | National Institute Of Advanced Industrial & Technology | 金属酸化物半導体薄膜及びその製法 |
JP2003253254A (ja) * | 2002-02-28 | 2003-09-10 | Fuji Photo Film Co Ltd | 酸化物半導体超微粒子からなる発光層構造物 |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP2004149367A (ja) * | 2002-10-31 | 2004-05-27 | Japan Science & Technology Agency | 酸化亜鉛粒子又は膜製造用水溶液及び酸化亜鉛粒子又は膜の製造方法 |
DE60332062D1 (de) * | 2002-12-11 | 2010-05-20 | Konica Minolta Holdings Inc | Tintenstrahldrucker und Bildaufzeichnungsverfahren |
JP2004349583A (ja) | 2003-05-23 | 2004-12-09 | Sharp Corp | トランジスタの製造方法 |
JP2005029408A (ja) * | 2003-07-09 | 2005-02-03 | Nippon Shokubai Co Ltd | 金属酸化物膜の形成方法 |
TWI221341B (en) * | 2003-09-18 | 2004-09-21 | Ind Tech Res Inst | Method and material for forming active layer of thin film transistor |
US20060220023A1 (en) * | 2005-03-03 | 2006-10-05 | Randy Hoffman | Thin-film device |
US7410893B2 (en) * | 2005-04-08 | 2008-08-12 | Hewlett-Packard Development Company, L.P. | System and method for depositing a seed layer |
-
2005
- 2005-06-16 US US11/155,436 patent/US7691666B2/en active Active
-
2006
- 2006-06-01 JP JP2008516907A patent/JP5249021B2/ja not_active Expired - Fee Related
- 2006-06-01 EP EP06760632A patent/EP1891666A1/en not_active Withdrawn
- 2006-06-01 WO PCT/US2006/021334 patent/WO2006138071A1/en active Application Filing
-
2010
- 2010-01-20 US US12/690,129 patent/US20100120197A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US7691666B2 (en) | 2010-04-06 |
WO2006138071A1 (en) | 2006-12-28 |
JP2008547195A (ja) | 2008-12-25 |
US20100120197A1 (en) | 2010-05-13 |
EP1891666A1 (en) | 2008-02-27 |
US20060284171A1 (en) | 2006-12-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5249021B2 (ja) | 亜鉛酸化物をベースとした半導体材料を含む薄膜トランジスタ | |
US7402506B2 (en) | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby | |
US20080296567A1 (en) | Method of making thin film transistors comprising zinc-oxide-based semiconductor materials | |
Lee et al. | High-Performance Oxide-Based p–n Heterojunctions Integrating p-SnO x and n-InGaZnO | |
US10714627B2 (en) | Bottom gate type thin film transistor, method of manufacturing the same, and display apparatus | |
Leppaniemi et al. | Far-UV annealed inkjet-printed In2O3 semiconductor layers for thin-film transistors on a flexible polyethylene naphthalate substrate | |
Kagan et al. | Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors | |
JP4572543B2 (ja) | 電界効果型トランジスタ並びにそれを用いた液晶表示装置 | |
Semple et al. | Analysis of Schottky contact formation in coplanar Au/ZnO/Al nanogap radio frequency diodes processed from solution at low temperature | |
US20080303037A1 (en) | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby | |
EP1976019B1 (en) | Thin film transistor including titanium oxides as active layer and method of manufacturing the same | |
Sharma et al. | High-performance all-printed amorphous oxide FETS and logics with electronically compatible electrode/channel interface | |
US9472673B2 (en) | Thin film transistor, method of manufacturing same, and image display apparatus | |
Tang et al. | Strategy for selective printing of gate insulators customized for practical application in organic integrated devices | |
US20080299771A1 (en) | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby | |
Kim et al. | Modulation of the Al/Cu2O Schottky barrier height for p-type oxide TFTs using a polyethylenimine interlayer | |
US7868322B2 (en) | Method for fabricating an organic thin film transistor by oxidation and selective reduction of organic semiconductor material | |
US7872258B2 (en) | Organic thin-film transistors | |
JP4767856B2 (ja) | 電界効果トランジスタの製造方法 | |
JP5760360B2 (ja) | 薄膜トランジスタ及び薄膜トランジスタの製造方法 | |
EP4239688A1 (en) | Thin film transistor and preparation method thereof | |
Acharya et al. | Electronic materials for solution-processed TFTs | |
Tong et al. | Printed flexible thin-film transistors | |
Miyakawa et al. | Direct Patterned Printing Method of Top-Contact ITO Electrodes for Solution-Processed Metal Oxide Thin-film Transistors | |
Arias et al. | All printed thin film transistors for flexible electronics |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090601 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090601 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120806 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120814 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121113 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130312 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130411 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5249021 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160419 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |