JP4861330B2 - 有機発光ダイオードを含むディスプレイおよびその作製方法 - Google Patents

有機発光ダイオードを含むディスプレイおよびその作製方法 Download PDF

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Publication number
JP4861330B2
JP4861330B2 JP2007538979A JP2007538979A JP4861330B2 JP 4861330 B2 JP4861330 B2 JP 4861330B2 JP 2007538979 A JP2007538979 A JP 2007538979A JP 2007538979 A JP2007538979 A JP 2007538979A JP 4861330 B2 JP4861330 B2 JP 4861330B2
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zno
thin film
pixel
row
substrate
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Japanese (ja)
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JP2008519292A (ja
JP2008519292A5 (enExample
Inventor
エフ． バウデ，ポール
ディー． タイス，スティーブン
エー． ハーセ，マイケル
ダブリュ． ヘメッシュ，エリック
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Thin Film Transistor (AREA)
JP2007538979A 2004-11-02 2005-10-17 有機発光ダイオードを含むディスプレイおよびその作製方法 Expired - Fee Related JP4861330B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/979,067 2004-11-02
US10/979,067 US7298084B2 (en) 2004-11-02 2004-11-02 Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
PCT/US2005/037349 WO2006049859A2 (en) 2004-11-02 2005-10-17 Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes

Publications (3)

Publication Number Publication Date
JP2008519292A JP2008519292A (ja) 2008-06-05
JP2008519292A5 JP2008519292A5 (enExample) 2008-12-04
JP4861330B2 true JP4861330B2 (ja) 2012-01-25

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JP2007538979A Expired - Fee Related JP4861330B2 (ja) 2004-11-02 2005-10-17 有機発光ダイオードを含むディスプレイおよびその作製方法

Country Status (8)

Country Link
US (1) US7298084B2 (enExample)
EP (1) EP1810336A2 (enExample)
JP (1) JP4861330B2 (enExample)
KR (1) KR20070074594A (enExample)
CN (1) CN101048871A (enExample)
CA (1) CA2584353A1 (enExample)
TW (1) TW200629615A (enExample)
WO (1) WO2006049859A2 (enExample)

Families Citing this family (1825)

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Publication number Priority date Publication date Assignee Title
TWI445178B (zh) 2005-01-28 2014-07-11 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI505473B (zh) * 2005-01-28 2015-10-21 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
JP4899327B2 (ja) * 2005-03-15 2012-03-21 カシオ計算機株式会社 シフトレジスタ回路及びその駆動制御方法並びに駆動制御装置
US7928938B2 (en) * 2005-04-19 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory circuit, display device and electronic apparatus
US20060289879A1 (en) * 2005-06-27 2006-12-28 Intel Corporation Dual-face display apparatus, systems, and methods
TWI429327B (zh) 2005-06-30 2014-03-01 半導體能源研究所股份有限公司 半導體裝置、顯示裝置、及電子設備
US8629819B2 (en) 2005-07-14 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
TWI485681B (zh) * 2005-08-12 2015-05-21 半導體能源研究所股份有限公司 顯示裝置
EP1758072A3 (en) * 2005-08-24 2007-05-02 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
EP1938458B1 (en) 2005-09-21 2015-06-03 Semiconductor Energy Laboratory Co., Ltd. Cyclic redundancy check circuit and devices having the cyclic redundancy check circuit
EP3614442A3 (en) * 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
EP1935027B1 (en) 2005-10-14 2017-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5037808B2 (ja) * 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
CN101577293B (zh) * 2005-11-15 2012-09-19 株式会社半导体能源研究所 半导体器件及其制造方法
EP2924498A1 (en) 2006-04-06 2015-09-30 Semiconductor Energy Laboratory Co, Ltd. Liquid crystal desplay device, semiconductor device, and electronic appliance
KR100785038B1 (ko) * 2006-04-17 2007-12-12 삼성전자주식회사 비정질 ＺｎＯ계 ＴＦＴ
WO2007135795A1 (ja) * 2006-05-24 2007-11-29 Sharp Kabushiki Kaisha 表示装置の駆動回路およびデータ信号線駆動回路ならびに表示装置
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
EP1895545B1 (en) 2006-08-31 2014-04-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP5116277B2 (ja) 2006-09-29 2013-01-09 株式会社半導体エネルギー研究所 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器
TWI442368B (zh) * 2006-10-26 2014-06-21 半導體能源研究所股份有限公司 電子裝置，顯示裝置，和半導體裝置，以及其驅動方法
US7646015B2 (en) * 2006-10-31 2010-01-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
KR101509663B1 (ko) 2007-02-16 2015-04-06 삼성전자주식회사 산화물 반도체층 형성 방법 및 이를 이용한 반도체 소자제조방법
US20080205010A1 (en) * 2007-02-26 2008-08-28 3M Innovative Properties Company Active matrix backplanes allowing relaxed alignment tolerance
US7629206B2 (en) * 2007-02-26 2009-12-08 3M Innovative Properties Company Patterning self-aligned transistors using back surface illumination
KR101334181B1 (ko) * 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
JP5408842B2 (ja) * 2007-04-27 2014-02-05 キヤノン株式会社 発光装置およびその製造方法
JP5542297B2 (ja) 2007-05-17 2014-07-09 株式会社半導体エネルギー研究所 液晶表示装置、表示モジュール及び電子機器
JP4989309B2 (ja) 2007-05-18 2012-08-01 株式会社半導体エネルギー研究所 液晶表示装置
WO2008156312A2 (en) 2007-06-19 2008-12-24 Samsung Electronics Co., Ltd. Oxide semiconductors and thin film transistors comprising the same
US7935964B2 (en) * 2007-06-19 2011-05-03 Samsung Electronics Co., Ltd. Oxide semiconductors and thin film transistors comprising the same
JP2010532096A (ja) * 2007-06-28 2010-09-30 スリーエム イノベイティブ プロパティズ カンパニー ゲート構造体を形成する方法
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
WO2009014155A1 (en) 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
NO332409B1 (no) * 2008-01-24 2012-09-17 Well Technology As Anordning og fremgangsmate for a isolere en seksjon av et bronnhull
KR101496148B1 (ko) * 2008-05-15 2015-02-27 삼성전자주식회사 반도체소자 및 그 제조방법
US9041202B2 (en) 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
KR101468591B1 (ko) * 2008-05-29 2014-12-04 삼성전자주식회사 산화물 반도체 및 이를 포함하는 박막 트랜지스터
US8314765B2 (en) 2008-06-17 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device, and electronic device
KR101553691B1 (ko) 2008-07-10 2015-09-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치
US8822995B2 (en) * 2008-07-24 2014-09-02 Samsung Display Co., Ltd. Display substrate and method of manufacturing the same
US8945981B2 (en) 2008-07-31 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI469354B (zh) 2008-07-31 2015-01-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9666719B2 (en) 2008-07-31 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI491048B (zh) 2008-07-31 2015-07-01 半導體能源研究所股份有限公司 半導體裝置
TWI622175B (zh) 2008-07-31 2018-04-21 半導體能源研究所股份有限公司 半導體裝置
JP5525778B2 (ja) * 2008-08-08 2014-06-18 株式会社半導体エネルギー研究所 半導体装置
TWI500160B (zh) 2008-08-08 2015-09-11 Semiconductor Energy Lab 半導體裝置及其製造方法
TWI508282B (zh) 2008-08-08 2015-11-11 Semiconductor Energy Lab 半導體裝置及其製造方法
TWI424506B (zh) 2008-08-08 2014-01-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
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US9082857B2 (en) * 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
KR101767864B1 (ko) * 2008-09-12 2017-08-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 생산 방법
KR101623224B1 (ko) 2008-09-12 2016-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
CN102150191B (zh) * 2008-09-12 2013-07-24 株式会社半导体能源研究所 显示装置
WO2010029865A1 (en) 2008-09-12 2010-03-18 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101911386B1 (ko) * 2008-09-19 2018-12-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
KR101636755B1 (ko) 2008-09-19 2016-07-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2010032640A1 (en) 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101670695B1 (ko) * 2008-09-19 2016-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR101273913B1 (ko) 2008-09-19 2013-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101611643B1 (ko) * 2008-10-01 2016-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101803720B1 (ko) * 2008-10-03 2017-12-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
CN103928476A (zh) 2008-10-03 2014-07-16 株式会社半导体能源研究所 显示装置及其制造方法
KR101579050B1 (ko) * 2008-10-03 2015-12-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
EP2172977A1 (en) 2008-10-03 2010-04-07 Semiconductor Energy Laboratory Co., Ltd. Display device
EP2172804B1 (en) 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
CN101719493B (zh) 2008-10-08 2014-05-14 株式会社半导体能源研究所 显示装置
JP5484853B2 (ja) 2008-10-10 2014-05-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101799601B1 (ko) * 2008-10-16 2017-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 표시 장치
CN102197706B (zh) * 2008-10-21 2014-05-07 皇家飞利浦电子股份有限公司 发光二极管驱动装置
JP5361651B2 (ja) 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8741702B2 (en) 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2010047288A1 (en) 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
JP5442234B2 (ja) 2008-10-24 2014-03-12 株式会社半導体エネルギー研究所 半導体装置及び表示装置
EP2180518B1 (en) 2008-10-24 2018-04-25 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
US8106400B2 (en) 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101259727B1 (ko) 2008-10-24 2013-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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KR101667909B1 (ko) 2008-10-24 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
KR101603303B1 (ko) 2008-10-31 2016-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 도전성 산질화물 및 도전성 산질화물막의 제작 방법
KR101634411B1 (ko) * 2008-10-31 2016-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 표시 장치 및 전자 장치
TWI659474B (zh) 2008-10-31 2019-05-11 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置及其製造方法
KR101631454B1 (ko) * 2008-10-31 2016-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리회로
TWI655780B (zh) 2008-11-07 2019-04-01 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI467663B (zh) 2008-11-07 2015-01-01 半導體能源研究所股份有限公司 半導體裝置和該半導體裝置的製造方法
EP2184783B1 (en) * 2008-11-07 2012-10-03 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and method for manufacturing the same
CN101740631B (zh) * 2008-11-07 2014-07-16 株式会社半导体能源研究所 半导体装置及该半导体装置的制造方法
TWI535037B (zh) 2008-11-07 2016-05-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
CN102210025A (zh) 2008-11-07 2011-10-05 株式会社半导体能源研究所 半导体器件
TWI536577B (zh) 2008-11-13 2016-06-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR101432764B1 (ko) 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
US8232947B2 (en) 2008-11-14 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2010153802A (ja) 2008-11-20 2010-07-08 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
KR102359831B1 (ko) 2008-11-21 2022-02-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
TWI508304B (zh) 2008-11-28 2015-11-11 半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI595297B (zh) * 2008-11-28 2017-08-11 半導體能源研究所股份有限公司 液晶顯示裝置
TWI585955B (zh) * 2008-11-28 2017-06-01 半導體能源研究所股份有限公司 光感測器及顯示裝置
WO2010064590A1 (en) * 2008-12-01 2010-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI633371B (zh) 2008-12-03 2018-08-21 半導體能源研究所股份有限公司 液晶顯示裝置
JP5491833B2 (ja) 2008-12-05 2014-05-14 株式会社半導体エネルギー研究所 半導体装置
WO2010071034A1 (en) 2008-12-19 2010-06-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor
JP5615540B2 (ja) * 2008-12-19 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2202802B1 (en) * 2008-12-24 2012-09-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
US8441007B2 (en) 2008-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
TWI476915B (zh) 2008-12-25 2015-03-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR101719350B1 (ko) * 2008-12-25 2017-03-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8114720B2 (en) 2008-12-25 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5590877B2 (ja) * 2008-12-26 2014-09-17 株式会社半導体エネルギー研究所 半導体装置
TWI501319B (zh) 2008-12-26 2015-09-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR101648927B1 (ko) * 2009-01-16 2016-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8492756B2 (en) 2009-01-23 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8436350B2 (en) * 2009-01-30 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using an oxide semiconductor with a plurality of metal clusters
US8367486B2 (en) 2009-02-05 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
US8174021B2 (en) 2009-02-06 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
US8749930B2 (en) * 2009-02-09 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Protection circuit, semiconductor device, photoelectric conversion device, and electronic device
CN101840936B (zh) 2009-02-13 2014-10-08 株式会社半导体能源研究所 包括晶体管的半导体装置及其制造方法
US8278657B2 (en) 2009-02-13 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
US8247812B2 (en) * 2009-02-13 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
KR101097454B1 (ko) * 2009-02-16 2011-12-23 네오뷰코오롱 주식회사 Ｏｌｅｄ 패널의 화소 회로, 이를 이용한 표시 장치 및 ｏｌｅｄ 패널의 구동 방법
US8247276B2 (en) 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US8841661B2 (en) * 2009-02-25 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
US8704216B2 (en) 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8461582B2 (en) 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100224878A1 (en) 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20100224880A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101671210B1 (ko) 2009-03-06 2016-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR102391280B1 (ko) 2009-03-12 2022-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI485781B (zh) * 2009-03-13 2015-05-21 半導體能源研究所股份有限公司 半導體裝置及該半導體裝置的製造方法
US8450144B2 (en) * 2009-03-26 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI617029B (zh) 2009-03-27 2018-03-01 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置
KR101752640B1 (ko) 2009-03-27 2017-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR101681884B1 (ko) 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치, 표시장치 및 전자기기
TWI485851B (zh) * 2009-03-30 2015-05-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI489628B (zh) * 2009-04-02 2015-06-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
US8338226B2 (en) * 2009-04-02 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5615018B2 (ja) 2009-04-10 2014-10-29 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
TWI476917B (zh) 2009-04-16 2015-03-11 半導體能源研究所股份有限公司 半導體裝置和其製造方法
CN102422426B (zh) * 2009-05-01 2016-06-01 株式会社半导体能源研究所 半导体装置的制造方法
JP5751762B2 (ja) 2009-05-21 2015-07-22 株式会社半導体エネルギー研究所 半導体装置
EP2256814B1 (en) 2009-05-29 2019-01-16 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
EP2256795B1 (en) * 2009-05-29 2014-11-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for oxide semiconductor device
KR101703524B1 (ko) * 2009-05-29 2017-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 전자기기 및 조명 장치
JP5564331B2 (ja) 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101810699B1 (ko) * 2009-06-30 2018-01-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
EP2449595B1 (en) 2009-06-30 2017-07-26 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
KR102458127B1 (ko) 2009-06-30 2022-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
KR101944656B1 (ko) 2009-06-30 2019-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
US20110000175A1 (en) * 2009-07-01 2011-01-06 Husqvarna Consumer Outdoor Products N.A. Inc. Variable speed controller
KR101476817B1 (ko) 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터를 갖는 표시 장치 및 그 제작 방법
JP5663214B2 (ja) 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102503687B1 (ko) 2009-07-03 2023-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR101460868B1 (ko) 2009-07-10 2014-11-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
SG10201403913PA (en) 2009-07-10 2014-10-30 Semiconductor Energy Lab Method for manufacturing semiconductor device
KR102416978B1 (ko) 2009-07-10 2022-07-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011007677A1 (en) 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011007682A1 (en) * 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
WO2011007675A1 (en) * 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101782176B1 (ko) * 2009-07-18 2017-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
KR101907366B1 (ko) 2009-07-18 2018-10-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
CN102473733B (zh) 2009-07-18 2015-09-30 株式会社半导体能源研究所 半导体装置以及制造半导体装置的方法
WO2011010545A1 (en) 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011010542A1 (en) 2009-07-23 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101785992B1 (ko) 2009-07-24 2017-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011013523A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN105070761B (zh) 2009-07-31 2019-08-20 株式会社半导体能源研究所 显示装置
KR101291434B1 (ko) 2009-07-31 2013-08-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스 및 그 형성 방법
KR101967480B1 (ko) * 2009-07-31 2019-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011013502A1 (en) * 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI907190B (zh) 2009-08-07 2025-12-01 日商半導體能源研究所股份有限公司 半導體裝置
TWI582951B (zh) 2009-08-07 2017-05-11 半導體能源研究所股份有限公司 半導體裝置及包括該半導體裝置之電話、錶、和顯示裝置
JP5663231B2 (ja) 2009-08-07 2015-02-04 株式会社半導体エネルギー研究所 発光装置
TWI596741B (zh) 2009-08-07 2017-08-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI634642B (zh) 2009-08-07 2018-09-01 半導體能源研究所股份有限公司 半導體裝置和其製造方法
JP5642447B2 (ja) 2009-08-07 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
EP2284891B1 (en) 2009-08-07 2019-07-24 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
US9985237B2 (en) 2009-08-12 2018-05-29 X-Fab Semiconductor Foundries Ag Method of manufacturing an organic light emitting diode by lift-off
US8115883B2 (en) 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
WO2011027649A1 (en) * 2009-09-02 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a transistor, and manufacturing method of semiconductor device
WO2011027656A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
CN102484140B (zh) 2009-09-04 2015-04-22 株式会社半导体能源研究所 半导体器件的制造方法
CN102598283B (zh) * 2009-09-04 2016-05-18 株式会社半导体能源研究所 半导体器件及其制造方法
WO2011027664A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
WO2011027676A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101746198B1 (ko) 2009-09-04 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 전자기기
JP5700626B2 (ja) * 2009-09-04 2015-04-15 株式会社半導体エネルギー研究所 Ｅｌ表示装置
WO2011027701A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
KR101851926B1 (ko) 2009-09-04 2018-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
WO2011027702A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
KR102236140B1 (ko) * 2009-09-16 2021-04-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
KR101700470B1 (ko) * 2009-09-16 2017-01-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 구동 회로를 포함하는 표시 장치 및 표시 장치를 포함하는 전자 기기
US9715845B2 (en) 2009-09-16 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
EP2478554B1 (en) * 2009-09-16 2016-06-08 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
WO2011033914A1 (en) 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Driving method of display device and display device
KR101924321B1 (ko) 2009-09-16 2018-12-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
KR102293198B1 (ko) * 2009-09-16 2021-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011034012A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, light emitting device, semiconductor device, and electronic device
KR101914026B1 (ko) 2009-09-24 2018-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
KR101342343B1 (ko) 2009-09-24 2013-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자의 제작 방법
WO2011036981A1 (en) * 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20120071393A (ko) 2009-09-24 2012-07-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
TWI512997B (zh) * 2009-09-24 2015-12-11 半導體能源研究所股份有限公司 半導體裝置，電源電路，和半導體裝置的製造方法
KR102219095B1 (ko) 2009-09-24 2021-02-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
CN102474256B (zh) 2009-09-24 2016-03-02 株式会社半导体能源研究所 驱动器电路、包括驱动器电路的显示设备以及包括显示设备的电子电器
WO2011037008A1 (en) * 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
KR101740943B1 (ko) * 2009-09-24 2017-06-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101883330B1 (ko) * 2009-09-30 2018-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레독스 커패시터 및 그 제작 방법
WO2011040213A1 (en) * 2009-10-01 2011-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011043163A1 (en) * 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011043182A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for removing electricity and method for manufacturing semiconductor device
KR20230154098A (ko) 2009-10-08 2023-11-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101376461B1 (ko) * 2009-10-08 2014-03-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체층 및 반도체 장치
CN102687204A (zh) 2009-10-09 2012-09-19 株式会社半导体能源研究所 移位寄存器和显示装置以及其驱动方法
KR102000410B1 (ko) 2009-10-09 2019-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101424950B1 (ko) * 2009-10-09 2014-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
KR101820973B1 (ko) * 2009-10-09 2018-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
WO2011043194A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101754701B1 (ko) 2009-10-09 2017-07-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 제조하기 위한 방법
WO2011043206A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101396096B1 (ko) 2009-10-09 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
CN102598278B (zh) * 2009-10-09 2015-04-08 株式会社半导体能源研究所 半导体器件
KR101944239B1 (ko) 2009-10-09 2019-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 표시 장치 및 이를 포함한 전자 기기
WO2011043164A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR101832698B1 (ko) 2009-10-14 2018-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101717460B1 (ko) 2009-10-16 2017-03-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 액정 표시 장치를 포함한 전자 기기
KR101801538B1 (ko) 2009-10-16 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치
CN113903796B (zh) 2009-10-16 2026-04-07 株式会社半导体能源研究所 逻辑电路和半导体器件
KR101844080B1 (ko) 2009-10-16 2018-03-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 이를 구비한 전자 장치
KR101772639B1 (ko) * 2009-10-16 2017-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101291488B1 (ko) 2009-10-21 2013-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101789309B1 (ko) 2009-10-21 2017-10-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 아날로그 회로 및 반도체 장치
KR20130130879A (ko) 2009-10-21 2013-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작방법
KR101293261B1 (ko) * 2009-10-21 2013-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 표시 장치를 갖는 전자 기기
CN104485336B (zh) 2009-10-21 2018-01-02 株式会社半导体能源研究所 半导体器件
WO2011048923A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. E-book reader
CN102598280B (zh) 2009-10-21 2016-05-18 株式会社半导体能源研究所 液晶显示器件及包括该液晶显示器件的电子设备
KR101751908B1 (ko) 2009-10-21 2017-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전압 조정 회로
EP2494594B1 (en) * 2009-10-29 2020-02-19 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
KR20190006091A (ko) 2009-10-29 2019-01-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011052344A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, driving method of the same, and electronic appliance including the same
KR101796909B1 (ko) 2009-10-30 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 비선형 소자, 표시 장치, 및 전자 기기
WO2011052366A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
WO2011052382A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011052437A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
KR101712340B1 (ko) * 2009-10-30 2017-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 구동 회로를 포함하는 표시 장치, 및 표시 장치를 포함하는 전자 기기
KR20120099657A (ko) 2009-10-30 2012-09-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
WO2011052410A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Power diode, rectifier, and semiconductor device including the same
EP2494692B1 (en) * 2009-10-30 2016-11-23 Semiconductor Energy Laboratory Co. Ltd. Logic circuit and semiconductor device
KR20120091243A (ko) 2009-10-30 2012-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP2494597A4 (en) * 2009-10-30 2015-03-18 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT
WO2011052488A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101928402B1 (ko) * 2009-10-30 2018-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
WO2011052411A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
KR20120093952A (ko) * 2009-11-06 2012-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자 및 반도체 장치 제조 방법과, 성막 장치
CN102612749B (zh) 2009-11-06 2015-04-01 株式会社半导体能源研究所 半导体器件
KR101727469B1 (ko) * 2009-11-06 2017-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP5539846B2 (ja) 2009-11-06 2014-07-02 株式会社半導体エネルギー研究所 評価方法、半導体装置の作製方法
KR101876470B1 (ko) * 2009-11-06 2018-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011055644A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR102009305B1 (ko) 2009-11-06 2019-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN102598279B (zh) * 2009-11-06 2015-10-07 株式会社半导体能源研究所 半导体装置
WO2011055626A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101605984B1 (ko) * 2009-11-06 2016-03-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102286284B1 (ko) 2009-11-06 2021-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101824854B1 (ko) 2009-11-06 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102612714B (zh) 2009-11-13 2016-06-29 株式会社半导体能源研究所 半导体器件及其驱动方法
KR101975741B1 (ko) * 2009-11-13 2019-05-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 타깃 재료의 포장 방법 및 타깃의 장착 방법
KR20120106950A (ko) * 2009-11-13 2012-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟 및 그 제작 방법 및 트랜지스터
KR101738996B1 (ko) * 2009-11-13 2017-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 메모리 소자를 포함하는 장치
KR102433801B1 (ko) 2009-11-13 2022-08-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이 표시 장치를 구비한 전자 기기
WO2011058852A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101751560B1 (ko) * 2009-11-13 2017-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20120094013A (ko) * 2009-11-13 2012-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟 및 그 제조방법, 및 트랜지스터
WO2011058913A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102393447B1 (ko) * 2009-11-13 2022-05-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011062029A1 (en) 2009-11-18 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
JP5762723B2 (ja) 2009-11-20 2015-08-12 株式会社半導体エネルギー研究所 変調回路及びそれを備えた半導体装置
KR101928723B1 (ko) 2009-11-20 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101800854B1 (ko) * 2009-11-20 2017-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
CN102668077B (zh) 2009-11-20 2015-05-13 株式会社半导体能源研究所 非易失性锁存电路和逻辑电路,以及使用其的半导体器件
KR101790365B1 (ko) * 2009-11-20 2017-10-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011062057A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103151266B (zh) * 2009-11-20 2016-08-03 株式会社半导体能源研究所 用于制造半导体器件的方法
KR20120107079A (ko) 2009-11-20 2012-09-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터
CN102598266B (zh) * 2009-11-20 2015-04-22 株式会社半导体能源研究所 半导体装置
WO2011062042A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011065183A1 (en) * 2009-11-24 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory cell
WO2011065258A1 (en) * 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011065209A1 (en) * 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
CN102640292B (zh) 2009-11-27 2015-11-25 株式会社半导体能源研究所 半导体装置和及其制造方法
CN102640293B (zh) * 2009-11-27 2015-07-22 株式会社半导体能源研究所 半导体器件
KR101895080B1 (ko) * 2009-11-28 2018-10-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101824124B1 (ko) 2009-11-28 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011065210A1 (en) * 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
EP2504855A4 (en) 2009-11-28 2016-07-20 Semiconductor Energy Lab STACKED OXIDE MATERIAL, SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
KR20180030255A (ko) * 2009-11-30 2018-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치, 액정 표시 장치의 구동 방법, 및 이 액정 표시 장치를 구비하는 전자기기
JP5584103B2 (ja) 2009-12-04 2014-09-03 株式会社半導体エネルギー研究所 半導体装置
WO2011068106A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
WO2011068028A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and method for manufacturing the same
KR20170100065A (ko) 2009-12-04 2017-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011068025A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Dc converter circuit and power supply circuit
WO2011068022A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102117506B1 (ko) 2009-12-04 2020-06-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
EP2507823B1 (en) 2009-12-04 2018-09-26 Semiconductor Energy Laboratory Co. Ltd. Manufacturing method for semiconductor device
WO2011068021A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Display device
KR20120103676A (ko) 2009-12-04 2012-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101523358B1 (ko) 2009-12-04 2015-05-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP2011139052A (ja) 2009-12-04 2011-07-14 Semiconductor Energy Lab Co Ltd 半導体記憶装置
KR102153034B1 (ko) 2009-12-04 2020-09-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101945171B1 (ko) 2009-12-08 2019-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011070892A1 (en) * 2009-12-08 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102763154B (zh) 2009-12-10 2015-05-20 株式会社半导体能源研究所 显示装置及其驱动方法
KR101481398B1 (ko) 2009-12-11 2015-01-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 래치 회로 및 cpu
KR20170116239A (ko) * 2009-12-11 2017-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터
WO2011070929A1 (en) * 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP5727204B2 (ja) 2009-12-11 2015-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN102656683B (zh) 2009-12-11 2015-02-11 株式会社半导体能源研究所 半导体装置
WO2011070901A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011074590A1 (en) 2009-12-17 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, measurement apparatus, and measurement method of relative permittivity
US9057758B2 (en) * 2009-12-18 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for measuring current, method for inspecting semiconductor device, semiconductor device, and test element group
WO2011074407A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101768433B1 (ko) 2009-12-18 2017-08-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
KR101822353B1 (ko) 2009-12-18 2018-01-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법 및 표시 장치
KR101729933B1 (ko) 2009-12-18 2017-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치
EP2513893A4 (en) * 2009-12-18 2016-09-07 Semiconductor Energy Lab Liquid crystal display device and electronic device
EP2513966B1 (en) * 2009-12-18 2020-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011074394A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Display device including optical sensor and driving method thereof
KR101763660B1 (ko) 2009-12-18 2017-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 그 구동 방법
WO2011077908A1 (en) 2009-12-23 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011077926A1 (en) 2009-12-24 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
WO2011077916A1 (en) 2009-12-24 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2011077978A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
KR101866734B1 (ko) 2009-12-25 2018-06-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102804360B (zh) 2009-12-25 2014-12-17 株式会社半导体能源研究所 半导体装置
KR20200013808A (ko) 2009-12-25 2020-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 메모리 장치, 반도체 장치, 및 전자 장치
KR101301463B1 (ko) * 2009-12-25 2013-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 제작하기 위한 방법
KR101541474B1 (ko) 2009-12-25 2015-08-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 구동 방법
US8441009B2 (en) * 2009-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN105353551A (zh) 2009-12-28 2016-02-24 株式会社半导体能源研究所 液晶显示装置及电子设备
KR20120106873A (ko) 2009-12-28 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR102878874B1 (ko) 2009-12-28 2025-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치와 반도체 장치
WO2011080998A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011081041A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
WO2011080999A1 (en) * 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101182441B1 (ko) * 2010-01-13 2012-09-12 삼성디스플레이 주식회사 유기 박막 패턴 형성 방법 및 유기 발광 디스플레이 장치의 제조 방법
KR101791279B1 (ko) * 2010-01-15 2017-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101798367B1 (ko) 2010-01-15 2017-11-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011086812A1 (en) * 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102471810B1 (ko) 2010-01-15 2022-11-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 구동하는 방법
CN102696064B (zh) 2010-01-15 2015-11-25 株式会社半导体能源研究所 半导体装置和电子装置
US8780629B2 (en) 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR101848516B1 (ko) * 2010-01-15 2018-04-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP2526619B1 (en) 2010-01-20 2016-03-23 Semiconductor Energy Laboratory Co. Ltd. Signal processing circuit and method for driving the same
WO2011089842A1 (en) * 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
KR102129540B1 (ko) 2010-01-20 2020-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US9984617B2 (en) 2010-01-20 2018-05-29 Semiconductor Energy Laboratory Co., Ltd. Display device including light emitting element
KR102031848B1 (ko) * 2010-01-20 2019-10-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전자 기기 및 전자 시스템
KR101842860B1 (ko) 2010-01-20 2018-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법
WO2011089832A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device and liquid crystal display device
KR102248998B1 (ko) 2010-01-20 2021-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전자 기기
SG182272A1 (en) 2010-01-20 2012-08-30 Semiconductor Energy Lab Semiconductor device
WO2011090087A1 (en) * 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Display method of display device
US8415731B2 (en) * 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
KR101637789B1 (ko) * 2010-01-22 2016-07-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011089841A1 (en) 2010-01-22 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20180043383A (ko) 2010-01-22 2018-04-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
KR20190093706A (ko) 2010-01-24 2019-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치와 이의 제조 방법
US8879010B2 (en) 2010-01-24 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Display device
CN102714026B (zh) 2010-01-24 2016-09-14 株式会社半导体能源研究所 显示装置
KR101948707B1 (ko) * 2010-01-29 2019-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
KR20120112803A (ko) 2010-01-29 2012-10-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 이용한 전자 기기
WO2011093150A1 (en) 2010-01-29 2011-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102628681B1 (ko) 2010-02-05 2024-01-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
US9391209B2 (en) 2010-02-05 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8436403B2 (en) 2010-02-05 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor provided with sidewall and electronic appliance
WO2011096277A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
WO2011096153A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Display device
CN102725842B (zh) 2010-02-05 2014-12-03 株式会社半导体能源研究所 半导体器件
KR101926336B1 (ko) 2010-02-05 2019-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102026603B1 (ko) * 2010-02-05 2019-10-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011096286A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and semiconductor device
KR101921618B1 (ko) 2010-02-05 2018-11-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
KR20260030834A (ko) 2010-02-05 2026-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제조 방법
WO2011099342A1 (en) 2010-02-10 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
US8947337B2 (en) 2010-02-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2011099368A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
WO2011099389A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
US8617920B2 (en) 2010-02-12 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011099360A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
CN102741915B (zh) * 2010-02-12 2015-12-16 株式会社半导体能源研究所 显示装置及驱动方法
CN105336744B (zh) 2010-02-12 2018-12-21 株式会社半导体能源研究所 半导体装置及其驱动方法
KR101838130B1 (ko) 2010-02-12 2018-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작방법
CN102763156B (zh) * 2010-02-12 2015-11-25 株式会社半导体能源研究所 液晶显示装置和电子装置
KR101830196B1 (ko) 2010-02-12 2018-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
KR102586642B1 (ko) 2010-02-18 2023-10-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5740169B2 (ja) * 2010-02-19 2015-06-24 株式会社半導体エネルギー研究所 トランジスタの作製方法
WO2011102183A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102754162B (zh) 2010-02-19 2015-12-09 株式会社半导体能源研究所 半导体器件及半导体器件的驱动方法
KR101848684B1 (ko) * 2010-02-19 2018-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 장치
CN102763202B (zh) * 2010-02-19 2016-08-03 株式会社半导体能源研究所 半导体装置及其制造方法
KR101939713B1 (ko) 2010-02-19 2019-01-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN105786268B (zh) 2010-02-19 2019-03-12 株式会社半导体能源研究所 显示设备及其驱动方法
KR101906151B1 (ko) 2010-02-19 2018-10-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터 및 이를 이용한 표시 장치
WO2011102206A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device, driving method thereof, and method for manufacturing semiconductor device
WO2011102190A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Demodulation circuit and rfid tag including the demodulation circuit
WO2011102233A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102647090B1 (ko) 2010-02-23 2024-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR102358272B1 (ko) 2010-02-26 2022-02-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
US9000438B2 (en) 2010-02-26 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011105198A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20230003378A (ko) 2010-02-26 2023-01-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102770903B (zh) * 2010-02-26 2015-10-07 株式会社半导体能源研究所 显示装置及具备该显示装置的电子书阅读器
CN102782859B (zh) * 2010-02-26 2015-07-29 株式会社半导体能源研究所 半导体装置的制造方法
KR20130009978A (ko) * 2010-02-26 2013-01-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자의 제조 방법 및 성막 장치
CN102770902B (zh) * 2010-02-26 2016-11-23 株式会社半导体能源研究所 显示设备及其驱动方法
WO2011105310A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101838628B1 (ko) 2010-03-02 2018-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 펄스 신호 출력 회로 및 시프트 레지스터
WO2011108367A1 (en) 2010-03-02 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Boosting circuit and rfid tag including boosting circuit
KR101807734B1 (ko) 2010-03-02 2017-12-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 펄스 신호 출력 회로 및 시프트 레지스터
CN102783025B (zh) 2010-03-02 2015-10-07 株式会社半导体能源研究所 脉冲信号输出电路和移位寄存器
KR101932909B1 (ko) * 2010-03-04 2018-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치 및 반도체 장치
KR102268217B1 (ko) 2010-03-05 2021-06-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101878206B1 (ko) * 2010-03-05 2018-07-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막의 제작 방법 및 트랜지스터의 제작 방법
WO2011108374A1 (en) * 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR20180020327A (ko) * 2010-03-08 2018-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치를 제작하는 방법
WO2011111504A1 (en) 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Electronic device and electronic system
KR101812467B1 (ko) * 2010-03-08 2017-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011111490A1 (en) 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
EP2365417A3 (en) * 2010-03-08 2015-04-29 Semiconductor Energy Laboratory Co, Ltd. Electronic device and electronic system
CN110718557B (zh) 2010-03-08 2023-12-26 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
DE112011100842T5 (de) * 2010-03-08 2013-01-17 Semiconductor Energy Laboratory Co., Ltd. Halbleiterbauelement und Verfahren zu dessen Herstellung
CN102804380B (zh) 2010-03-12 2015-11-25 株式会社半导体能源研究所 半导体装置
US8900362B2 (en) 2010-03-12 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of gallium oxide single crystal
CN102822978B (zh) * 2010-03-12 2015-07-22 株式会社半导体能源研究所 半导体装置及其制造方法
WO2011111508A1 (en) * 2010-03-12 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Method for driving input circuit and method for driving input-output device
KR101840185B1 (ko) 2010-03-12 2018-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 회로를 구동하는 방법 및 표시 장치를 구동하는 방법
CN102782622B (zh) * 2010-03-12 2016-11-02 株式会社半导体能源研究所 显示装置的驱动方法
WO2011114866A1 (en) * 2010-03-17 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
WO2011114919A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101840797B1 (ko) * 2010-03-19 2018-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치
KR101891065B1 (ko) * 2010-03-19 2018-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 구동 방법
WO2011114868A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110227082A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011118351A1 (en) * 2010-03-25 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102834921B (zh) * 2010-03-26 2016-04-27 株式会社半导体能源研究所 半导体装置的制造方法
KR101862539B1 (ko) * 2010-03-26 2018-05-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5731244B2 (ja) * 2010-03-26 2015-06-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN105304502B (zh) 2010-03-26 2018-07-03 株式会社半导体能源研究所 半导体装置的制造方法
WO2011118741A1 (en) 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011122299A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
KR101761966B1 (ko) 2010-03-31 2017-07-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전력 공급 장치와 그 구동 방법
KR20130069583A (ko) 2010-03-31 2013-06-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 필드 시퀀셜 구동형 표시 장치
CN102844873B (zh) 2010-03-31 2015-06-17 株式会社半导体能源研究所 半导体显示装置
CN102884477B (zh) 2010-03-31 2015-11-25 株式会社半导体能源研究所 液晶显示设备及其驱动方法
CN110620156A (zh) 2010-04-02 2019-12-27 株式会社半导体能源研究所 半导体装置
US9196739B2 (en) 2010-04-02 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor film and metal oxide film
CN102844872B (zh) 2010-04-02 2016-08-24 株式会社半导体能源研究所 半导体装置
US9190522B2 (en) 2010-04-02 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor
US9147768B2 (en) 2010-04-02 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor and a metal oxide film
US8884282B2 (en) 2010-04-02 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011125453A1 (en) 2010-04-07 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Transistor
WO2011125432A1 (en) 2010-04-07 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2011125455A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
US8207025B2 (en) 2010-04-09 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2011125806A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR101850926B1 (ko) 2010-04-09 2018-04-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8653514B2 (en) 2010-04-09 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101748901B1 (ko) 2010-04-09 2017-06-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 그 구동 방법
WO2011125456A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5744366B2 (ja) 2010-04-12 2015-07-08 株式会社半導体エネルギー研究所 液晶表示装置
US8854583B2 (en) 2010-04-12 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device
WO2011129233A1 (en) 2010-04-16 2011-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130061678A (ko) 2010-04-16 2013-06-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전원 회로
KR101881729B1 (ko) 2010-04-16 2018-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 성막 방법 및 반도체 장치를 제작하기 위한 방법
US8552712B2 (en) 2010-04-16 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Current measurement method, inspection method of semiconductor device, semiconductor device, and test element group
US8692243B2 (en) 2010-04-20 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011132529A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN106057907B (zh) 2010-04-23 2019-10-22 株式会社半导体能源研究所 半导体装置的制造方法
US9537043B2 (en) 2010-04-23 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
KR101636008B1 (ko) 2010-04-23 2016-07-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
DE112011101396T5 (de) 2010-04-23 2013-03-21 Semiconductor Energy Laboratory Co., Ltd. Anzeigevorrichtung und Treiberverfahren für dieselbe
CN102870219B (zh) 2010-04-23 2016-04-27 株式会社半导体能源研究所 半导体装置的制造方法
WO2011132591A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101877377B1 (ko) 2010-04-23 2018-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
WO2011135999A1 (en) 2010-04-27 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8941395B2 (en) 2010-04-27 2015-01-27 3M Innovative Properties Company Integrated passive circuit elements for sensing devices
US9697788B2 (en) 2010-04-28 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2011136018A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic appliance
WO2011135987A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20190110632A (ko) 2010-04-28 2019-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US8890555B2 (en) 2010-04-28 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for measuring transistor
US9349325B2 (en) 2010-04-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US9478185B2 (en) 2010-05-12 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
US9064473B2 (en) 2010-05-12 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
JP5797449B2 (ja) 2010-05-13 2015-10-21 株式会社半導体エネルギー研究所 半導体装置の評価方法
WO2011142467A1 (en) 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8664658B2 (en) 2010-05-14 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011142371A1 (en) 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI511236B (zh) 2010-05-14 2015-12-01 半導體能源研究所股份有限公司 半導體裝置
US9490368B2 (en) 2010-05-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US8588000B2 (en) 2010-05-20 2013-11-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device having a reading transistor with a back-gate electrode
JP5923248B2 (ja) 2010-05-20 2016-05-24 株式会社半導体エネルギー研究所 半導体装置
US9496405B2 (en) 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
US8624239B2 (en) 2010-05-20 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8906756B2 (en) 2010-05-21 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011145707A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
KR20130082091A (ko) 2010-05-21 2013-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011145468A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
WO2011145634A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011145706A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
KR20130077839A (ko) 2010-05-21 2013-07-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP5714973B2 (ja) 2010-05-21 2015-05-07 株式会社半導体エネルギー研究所 半導体装置
KR101872927B1 (ko) 2010-05-21 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011145537A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP5852793B2 (ja) 2010-05-21 2016-02-03 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
WO2011145633A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8629438B2 (en) 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011145484A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5766012B2 (ja) 2010-05-21 2015-08-19 株式会社半導体エネルギー研究所 液晶表示装置
JP5749975B2 (ja) 2010-05-28 2015-07-15 株式会社半導体エネルギー研究所 光検出装置、及び、タッチパネル
US8895375B2 (en) 2010-06-01 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and method for manufacturing the same
WO2011152286A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101894897B1 (ko) 2010-06-04 2018-09-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011152254A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8779433B2 (en) 2010-06-04 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011155295A1 (en) 2010-06-10 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Dc/dc converter, power supply circuit, and semiconductor device
KR102110724B1 (ko) 2010-06-11 2020-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
US8610180B2 (en) 2010-06-11 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Gas sensor and method for manufacturing the gas sensor
WO2011155302A1 (en) 2010-06-11 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5823740B2 (ja) 2010-06-16 2015-11-25 株式会社半導体エネルギー研究所 入出力装置
JP5797471B2 (ja) 2010-06-16 2015-10-21 株式会社半導体エネルギー研究所 入出力装置
US9209314B2 (en) 2010-06-16 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
US8637802B2 (en) 2010-06-18 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
US8552425B2 (en) 2010-06-18 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101862808B1 (ko) 2010-06-18 2018-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011158704A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011162147A1 (en) 2010-06-23 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8912016B2 (en) 2010-06-25 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method and test method of semiconductor device
KR20120000499A (ko) 2010-06-25 2012-01-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터 및 반도체 장치
WO2011162104A1 (en) 2010-06-25 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9437454B2 (en) 2010-06-29 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Wiring board, semiconductor device, and manufacturing methods thereof
KR101822526B1 (ko) 2010-06-30 2018-01-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
WO2012002040A1 (en) 2010-07-01 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
JP5771079B2 (ja) 2010-07-01 2015-08-26 株式会社半導体エネルギー研究所 撮像装置
US8441010B2 (en) 2010-07-01 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9336739B2 (en) 2010-07-02 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5792524B2 (ja) 2010-07-02 2015-10-14 株式会社半導体エネルギー研究所 装置
US8642380B2 (en) 2010-07-02 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR101995851B1 (ko) 2010-07-02 2019-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2012002197A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
TWI541782B (zh) 2010-07-02 2016-07-11 半導體能源研究所股份有限公司 液晶顯示裝置
KR20180135118A (ko) 2010-07-02 2018-12-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8605059B2 (en) 2010-07-02 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Input/output device and driving method thereof
CN103003934B (zh) 2010-07-16 2015-07-01 株式会社半导体能源研究所 半导体器件
WO2012008286A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012008390A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8785241B2 (en) 2010-07-16 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5917035B2 (ja) 2010-07-26 2016-05-11 株式会社半導体エネルギー研究所 半導体装置
KR101853516B1 (ko) 2010-07-27 2018-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20180088759A (ko) 2010-07-27 2018-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
TWI565001B (zh) 2010-07-28 2017-01-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
JP5846789B2 (ja) 2010-07-29 2016-01-20 株式会社半導体エネルギー研究所 半導体装置
WO2012014786A1 (en) 2010-07-30 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semicondcutor device and manufacturing method thereof
US8537600B2 (en) 2010-08-04 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Low off-state leakage current semiconductor memory device
US8928466B2 (en) 2010-08-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101842181B1 (ko) 2010-08-04 2018-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5739257B2 (ja) 2010-08-05 2015-06-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8582348B2 (en) 2010-08-06 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
TWI555128B (zh) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
US8803164B2 (en) 2010-08-06 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Solid-state image sensing device and semiconductor display device
JP5671418B2 (ja) 2010-08-06 2015-02-18 株式会社半導体エネルギー研究所 半導体装置の駆動方法
KR102006586B1 (ko) 2010-08-06 2019-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI688047B (zh) 2010-08-06 2020-03-11 半導體能源研究所股份有限公司 半導體裝置
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
DE112011102644B4 (de) 2010-08-06 2019-12-05 Semiconductor Energy Laboratory Co., Ltd. Integrierte Halbleiterschaltung
US8467232B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8792284B2 (en) 2010-08-06 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
US8467231B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP5832181B2 (ja) 2010-08-06 2015-12-16 株式会社半導体エネルギー研究所 液晶表示装置
JP5743790B2 (ja) 2010-08-06 2015-07-01 株式会社半導体エネルギー研究所 半導体装置
TWI621184B (zh) 2010-08-16 2018-04-11 半導體能源研究所股份有限公司 半導體裝置之製造方法
US9129703B2 (en) 2010-08-16 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor memory device
JP5848912B2 (ja) 2010-08-16 2016-01-27 株式会社半導体エネルギー研究所 液晶表示装置の制御回路、液晶表示装置、及び当該液晶表示装置を具備する電子機器
US9343480B2 (en) 2010-08-16 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI508294B (zh) 2010-08-19 2015-11-11 半導體能源研究所股份有限公司 半導體裝置
US8759820B2 (en) 2010-08-20 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8883555B2 (en) 2010-08-25 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Electronic device, manufacturing method of electronic device, and sputtering target
US8508276B2 (en) 2010-08-25 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including latch circuit
US8685787B2 (en) 2010-08-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9058047B2 (en) 2010-08-26 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013009285A (ja) 2010-08-26 2013-01-10 Semiconductor Energy Lab Co Ltd 信号処理回路及びその駆動方法
JP5727892B2 (ja) 2010-08-26 2015-06-03 株式会社半導体エネルギー研究所 半導体装置
US8592261B2 (en) 2010-08-27 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for designing semiconductor device
US8450123B2 (en) 2010-08-27 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Oxygen diffusion evaluation method of oxide film stacked body
JP5674594B2 (ja) 2010-08-27 2015-02-25 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の駆動方法
JP5806043B2 (ja) 2010-08-27 2015-11-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5763474B2 (ja) 2010-08-27 2015-08-12 株式会社半導体エネルギー研究所 光センサ
KR101979758B1 (ko) 2010-08-27 2019-05-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 반도체 장치
US8603841B2 (en) 2010-08-27 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of semiconductor device and light-emitting display device
US8593858B2 (en) 2010-08-31 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8634228B2 (en) 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8575610B2 (en) 2010-09-02 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
WO2012029674A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and method for manufacturing semiconductor device
WO2012029612A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing semiconductor device
WO2012029638A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012029596A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2012256819A (ja) 2010-09-08 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置
US8520426B2 (en) 2010-09-08 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US8487844B2 (en) 2010-09-08 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device including the same
US8797487B2 (en) 2010-09-10 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Transistor, liquid crystal display device, and manufacturing method thereof
KR101824125B1 (ko) 2010-09-10 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US8766253B2 (en) 2010-09-10 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20120026970A (ko) 2010-09-10 2012-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 발광 장치
US9142568B2 (en) 2010-09-10 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting display device
JP2012256821A (ja) 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
US8546161B2 (en) 2010-09-13 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and liquid crystal display device
KR101952235B1 (ko) 2010-09-13 2019-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US8647919B2 (en) 2010-09-13 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and method for manufacturing the same
US9546416B2 (en) 2010-09-13 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Method of forming crystalline oxide semiconductor film
US8592879B2 (en) 2010-09-13 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI543166B (zh) 2010-09-13 2016-07-21 半導體能源研究所股份有限公司 半導體裝置
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101872926B1 (ko) 2010-09-13 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5815337B2 (ja) 2010-09-13 2015-11-17 株式会社半導体エネルギー研究所 半導体装置
US8664097B2 (en) 2010-09-13 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR101932576B1 (ko) 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8558960B2 (en) 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
US9496743B2 (en) 2010-09-13 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Power receiving device and wireless power feed system
JP5827520B2 (ja) 2010-09-13 2015-12-02 株式会社半導体エネルギー研究所 半導体記憶装置
US8835917B2 (en) 2010-09-13 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power diode, and rectifier
TWI539453B (zh) 2010-09-14 2016-06-21 半導體能源研究所股份有限公司 記憶體裝置和半導體裝置
US9230994B2 (en) 2010-09-15 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2012035975A1 (en) 2010-09-15 2012-03-22 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
KR101426515B1 (ko) 2010-09-15 2014-08-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 표시 장치
JP2012256012A (ja) 2010-09-15 2012-12-27 Semiconductor Energy Lab Co Ltd 表示装置
US8767443B2 (en) 2010-09-22 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for inspecting the same
KR101856722B1 (ko) 2010-09-22 2018-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 파워 절연 게이트형 전계 효과 트랜지스터
US8792260B2 (en) 2010-09-27 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Rectifier circuit and semiconductor device using the same
TWI574259B (zh) 2010-09-29 2017-03-11 半導體能源研究所股份有限公司 半導體記憶體裝置和其驅動方法
TWI620176B (zh) 2010-10-05 2018-04-01 半導體能源研究所股份有限公司 半導體記憶體裝置及其驅動方法
TWI556317B (zh) 2010-10-07 2016-11-01 半導體能源研究所股份有限公司 薄膜元件、半導體裝置以及它們的製造方法
US8716646B2 (en) 2010-10-08 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for operating the same
US8679986B2 (en) 2010-10-14 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
TWI565079B (zh) 2010-10-20 2017-01-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US8803143B2 (en) 2010-10-20 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including buffer layers with high resistivity
TWI543158B (zh) 2010-10-25 2016-07-21 半導體能源研究所股份有限公司 半導體儲存裝置及其驅動方法
JP5771505B2 (ja) 2010-10-29 2015-09-02 株式会社半導体エネルギー研究所 受信回路
KR101924231B1 (ko) 2010-10-29 2018-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
KR101952456B1 (ko) 2010-10-29 2019-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치
CN105732401A (zh) 2010-11-02 2016-07-06 宇部兴产株式会社 (酰胺氨基烷烃)金属化合物及使用所述金属化合物制备含金属的薄膜的方法
US8916866B2 (en) 2010-11-03 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101952733B1 (ko) 2010-11-05 2019-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8569754B2 (en) 2010-11-05 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI555205B (zh) 2010-11-05 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
KR102130257B1 (ko) 2010-11-05 2020-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6010291B2 (ja) 2010-11-05 2016-10-19 株式会社半導体エネルギー研究所 表示装置の駆動方法
US9087744B2 (en) 2010-11-05 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving transistor
US8957468B2 (en) 2010-11-05 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Variable capacitor and liquid crystal display device
US8902637B2 (en) 2010-11-08 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device comprising inverting amplifier circuit and driving method thereof
TWI654764B (zh) 2010-11-11 2019-03-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置及其製造方法
JP5770068B2 (ja) 2010-11-12 2015-08-26 株式会社半導体エネルギー研究所 半導体装置
US8854865B2 (en) 2010-11-24 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8936965B2 (en) 2010-11-26 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8809852B2 (en) 2010-11-30 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
US9103724B2 (en) 2010-11-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device
TWI562379B (en) 2010-11-30 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing semiconductor device
US8629496B2 (en) 2010-11-30 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8816425B2 (en) 2010-11-30 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8823092B2 (en) 2010-11-30 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8461630B2 (en) 2010-12-01 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
DE112011106207B4 (de) 2010-12-03 2026-08-13 Semiconductor Energy Laboratory Co., Ltd. Halbleiterbauelement
TWI590249B (zh) 2010-12-03 2017-07-01 半導體能源研究所股份有限公司 積體電路，其驅動方法，及半導體裝置
JP5908263B2 (ja) 2010-12-03 2016-04-26 株式会社半導体エネルギー研究所 Ｄｃ−ｄｃコンバータ
JP5856827B2 (ja) 2010-12-09 2016-02-10 株式会社半導体エネルギー研究所 半導体装置
TWI534905B (zh) 2010-12-10 2016-05-21 半導體能源研究所股份有限公司 顯示裝置及顯示裝置之製造方法
JP5707914B2 (ja) * 2010-12-13 2015-04-30 ソニー株式会社 酸化物半導体を用いる装置、表示装置、及び、電子機器
JP2012256020A (ja) 2010-12-15 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置及びその駆動方法
JP2012142562A (ja) 2010-12-17 2012-07-26 Semiconductor Energy Lab Co Ltd 半導体記憶装置
US9202822B2 (en) 2010-12-17 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8730416B2 (en) 2010-12-17 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8894825B2 (en) 2010-12-17 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing the same, manufacturing semiconductor device
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
JP5864054B2 (ja) 2010-12-28 2016-02-17 株式会社半導体エネルギー研究所 半導体装置
WO2012090799A1 (en) 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2012090973A1 (en) 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5993141B2 (ja) 2010-12-28 2016-09-14 株式会社半導体エネルギー研究所 記憶装置
US8941112B2 (en) 2010-12-28 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101981808B1 (ko) 2010-12-28 2019-08-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
US9443984B2 (en) 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2012151453A (ja) 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法
JP5852874B2 (ja) 2010-12-28 2016-02-03 株式会社半導体エネルギー研究所 半導体装置
JP6030298B2 (ja) 2010-12-28 2016-11-24 株式会社半導体エネルギー研究所 緩衝記憶装置及び信号処理回路
US8735892B2 (en) 2010-12-28 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using oxide semiconductor
JP5975635B2 (ja) 2010-12-28 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
US9048142B2 (en) 2010-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI562142B (en) 2011-01-05 2016-12-11 Semiconductor Energy Lab Co Ltd Storage element, storage device, and signal processing circuit
US8536571B2 (en) 2011-01-12 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
TWI570809B (zh) 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI535032B (zh) 2011-01-12 2016-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8912080B2 (en) 2011-01-12 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of the semiconductor device
JP5977523B2 (ja) 2011-01-12 2016-08-24 株式会社半導体エネルギー研究所 トランジスタの作製方法
US8421071B2 (en) 2011-01-13 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Memory device
US8575678B2 (en) 2011-01-13 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device with floating gate
JP5859839B2 (ja) 2011-01-14 2016-02-16 株式会社半導体エネルギー研究所 記憶素子の駆動方法、及び、記憶素子
TWI492368B (zh) 2011-01-14 2015-07-11 半導體能源研究所股份有限公司 半導體記憶裝置
KR102026718B1 (ko) 2011-01-14 2019-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억장치, 반도체 장치, 검출 방법
US8916867B2 (en) 2011-01-20 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor element and semiconductor device
JP5798933B2 (ja) 2011-01-26 2015-10-21 株式会社半導体エネルギー研究所 信号処理回路
TWI866652B (zh) 2011-01-26 2024-12-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
WO2012102182A1 (en) 2011-01-26 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI570920B (zh) 2011-01-26 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI564890B (zh) 2011-01-26 2017-01-01 半導體能源研究所股份有限公司 記憶體裝置及半導體裝置
WO2012102183A1 (en) 2011-01-26 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI602303B (zh) 2011-01-26 2017-10-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI525619B (zh) 2011-01-27 2016-03-11 半導體能源研究所股份有限公司 記憶體電路
KR20130140824A (ko) 2011-01-27 2013-12-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8634230B2 (en) 2011-01-28 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9494829B2 (en) 2011-01-28 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device containing the same
DE112012000601T5 (de) 2011-01-28 2014-01-30 Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Herstellen einer Halbleitervorrichtung sowie Halbleitervorrichtung
WO2012102281A1 (en) 2011-01-28 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9799773B2 (en) 2011-02-02 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US8513773B2 (en) 2011-02-02 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Capacitor and semiconductor device including dielectric and N-type semiconductor
TWI520273B (zh) 2011-02-02 2016-02-01 半導體能源研究所股份有限公司 半導體儲存裝置
US8780614B2 (en) 2011-02-02 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US9431400B2 (en) 2011-02-08 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for manufacturing the same
US8787083B2 (en) 2011-02-10 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Memory circuit
US9167234B2 (en) 2011-02-14 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Display device
US8975680B2 (en) 2011-02-17 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method manufacturing semiconductor memory device
KR101899880B1 (ko) 2011-02-17 2018-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 ｌｓｉ
US8643007B2 (en) 2011-02-23 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8709920B2 (en) 2011-02-24 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9443455B2 (en) 2011-02-25 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Display device having a plurality of pixels
US9691772B2 (en) 2011-03-03 2017-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including memory cell which includes transistor and capacitor
US8785933B2 (en) 2011-03-04 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5898527B2 (ja) 2011-03-04 2016-04-06 株式会社半導体エネルギー研究所 半導体装置
US9646829B2 (en) 2011-03-04 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9023684B2 (en) 2011-03-04 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8841664B2 (en) 2011-03-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8659015B2 (en) 2011-03-04 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8659957B2 (en) 2011-03-07 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
JP5827145B2 (ja) 2011-03-08 2015-12-02 株式会社半導体エネルギー研究所 信号処理回路
US9099437B2 (en) 2011-03-08 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8625085B2 (en) 2011-03-08 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Defect evaluation method for semiconductor
US8772849B2 (en) 2011-03-10 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8541781B2 (en) 2011-03-10 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2012121265A1 (en) 2011-03-10 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for manufacturing the same
US8760903B2 (en) 2011-03-11 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Storage circuit
JP2012209543A (ja) 2011-03-11 2012-10-25 Semiconductor Energy Lab Co Ltd 半導体装置
TWI521612B (zh) 2011-03-11 2016-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
TWI624878B (zh) 2011-03-11 2018-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP5933300B2 (ja) 2011-03-16 2016-06-08 株式会社半導体エネルギー研究所 半導体装置
JP5933897B2 (ja) 2011-03-18 2016-06-15 株式会社半導体エネルギー研究所 半導体装置
KR101900525B1 (ko) 2011-03-18 2018-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막, 반도체 장치, 및 반도체 장치의 제작 방법
US8859330B2 (en) 2011-03-23 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5839474B2 (ja) 2011-03-24 2016-01-06 株式会社半導体エネルギー研究所 信号処理回路
US9012904B2 (en) 2011-03-25 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8956944B2 (en) 2011-03-25 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8987728B2 (en) 2011-03-25 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
TWI582999B (zh) 2011-03-25 2017-05-11 半導體能源研究所股份有限公司 場效電晶體及包含該場效電晶體之記憶體與半導體電路
TWI545652B (zh) 2011-03-25 2016-08-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9219159B2 (en) 2011-03-25 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
US8686416B2 (en) 2011-03-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP6053098B2 (ja) 2011-03-28 2016-12-27 株式会社半導体エネルギー研究所 半導体装置
JP5879165B2 (ja) 2011-03-30 2016-03-08 株式会社半導体エネルギー研究所 半導体装置
US8927329B2 (en) 2011-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device with improved electronic properties
US9082860B2 (en) 2011-03-31 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8686486B2 (en) 2011-03-31 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Memory device
TWI567735B (zh) 2011-03-31 2017-01-21 半導體能源研究所股份有限公司 記憶體電路，記憶體單元，及訊號處理電路
JP5982147B2 (ja) 2011-04-01 2016-08-31 株式会社半導体エネルギー研究所 発光装置
US8541266B2 (en) 2011-04-01 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9960278B2 (en) 2011-04-06 2018-05-01 Yuhei Sato Manufacturing method of semiconductor device
US9142320B2 (en) 2011-04-08 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
US8743590B2 (en) 2011-04-08 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device using the same
US9093538B2 (en) 2011-04-08 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9012905B2 (en) 2011-04-08 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
US9478668B2 (en) 2011-04-13 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US8854867B2 (en) 2011-04-13 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method of the memory device
JP5883699B2 (ja) 2011-04-13 2016-03-15 株式会社半導体エネルギー研究所 プログラマブルｌｓｉ
US9070776B2 (en) 2011-04-15 2015-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8878174B2 (en) 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit
US8779488B2 (en) 2011-04-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8878270B2 (en) 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP6001900B2 (ja) 2011-04-21 2016-10-05 株式会社半導体エネルギー研究所 信号処理回路
US9006803B2 (en) 2011-04-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US8809854B2 (en) 2011-04-22 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI548057B (zh) 2011-04-22 2016-09-01 半導體能源研究所股份有限公司 半導體裝置
US8878288B2 (en) 2011-04-22 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916868B2 (en) 2011-04-22 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9331206B2 (en) 2011-04-22 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Oxide material and semiconductor device
US8932913B2 (en) 2011-04-22 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US10079053B2 (en) 2011-04-22 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Memory element and memory device
JP5946683B2 (ja) 2011-04-22 2016-07-06 株式会社半導体エネルギー研究所 半導体装置
CN105931967B (zh) 2011-04-27 2019-05-03 株式会社半导体能源研究所 半导体装置的制造方法
US8681533B2 (en) 2011-04-28 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Memory circuit, signal processing circuit, and electronic device
KR101919056B1 (ko) 2011-04-28 2018-11-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 회로
US8729545B2 (en) 2011-04-28 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US9935622B2 (en) 2011-04-28 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Comparator and semiconductor device including comparator
KR101963457B1 (ko) 2011-04-29 2019-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치 및 그 구동 방법
US8785923B2 (en) 2011-04-29 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8476927B2 (en) 2011-04-29 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9614094B2 (en) 2011-04-29 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer and method for driving the same
US9111795B2 (en) 2011-04-29 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor connected to memory element through oxide semiconductor film
US8446171B2 (en) 2011-04-29 2013-05-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing unit
US8848464B2 (en) 2011-04-29 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
TWI525615B (zh) 2011-04-29 2016-03-11 半導體能源研究所股份有限公司 半導體儲存裝置
TWI654762B (zh) 2011-05-05 2019-03-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
WO2012153473A1 (en) 2011-05-06 2012-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9117701B2 (en) 2011-05-06 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8809928B2 (en) 2011-05-06 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and method for manufacturing the semiconductor device
WO2012153697A1 (en) 2011-05-06 2012-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
TWI568181B (zh) 2011-05-06 2017-01-21 半導體能源研究所股份有限公司 邏輯電路及半導體裝置
US8709922B2 (en) 2011-05-06 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9443844B2 (en) 2011-05-10 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Gain cell semiconductor memory device and driving method thereof
US8946066B2 (en) 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI541978B (zh) 2011-05-11 2016-07-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置之驅動方法
TWI557711B (zh) 2011-05-12 2016-11-11 半導體能源研究所股份有限公司 顯示裝置的驅動方法
US8847233B2 (en) 2011-05-12 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film
TWI536502B (zh) 2011-05-13 2016-06-01 半導體能源研究所股份有限公司 記憶體電路及電子裝置
JP5886128B2 (ja) 2011-05-13 2016-03-16 株式会社半導体エネルギー研究所 半導体装置
WO2012157472A1 (en) 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5959296B2 (ja) 2011-05-13 2016-08-02 株式会社半導体エネルギー研究所 半導体装置およびその製造方法
WO2012157463A1 (en) 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9954110B2 (en) 2011-05-13 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device
CN103548263B (zh) 2011-05-13 2016-12-07 株式会社半导体能源研究所 半导体装置
US9093539B2 (en) 2011-05-13 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6013773B2 (ja) 2011-05-13 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
KR101952570B1 (ko) 2011-05-13 2019-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US9397222B2 (en) 2011-05-13 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9048788B2 (en) 2011-05-13 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photoelectric conversion portion
KR101946360B1 (ko) 2011-05-16 2019-02-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 로직 디바이스
TWI570891B (zh) 2011-05-17 2017-02-11 半導體能源研究所股份有限公司 半導體裝置
TWI552150B (zh) 2011-05-18 2016-10-01 半導體能源研究所股份有限公司 半導體儲存裝置
US9673823B2 (en) 2011-05-18 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US8709889B2 (en) 2011-05-19 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and manufacturing method thereof
US8581625B2 (en) 2011-05-19 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9117920B2 (en) 2011-05-19 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device using oxide semiconductor
KR102093909B1 (ko) 2011-05-19 2020-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 회로 및 회로의 구동 방법
US8779799B2 (en) 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
KR102081792B1 (ko) 2011-05-19 2020-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 연산회로 및 연산회로의 구동방법
KR101991735B1 (ko) 2011-05-19 2019-06-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
US8837203B2 (en) 2011-05-19 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012160963A1 (en) 2011-05-20 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6091083B2 (ja) 2011-05-20 2017-03-08 株式会社半導体エネルギー研究所 記憶装置
TWI557739B (zh) 2011-05-20 2016-11-11 半導體能源研究所股份有限公司 半導體積體電路
JP5820336B2 (ja) 2011-05-20 2015-11-24 株式会社半導体エネルギー研究所 半導体装置
JP6030334B2 (ja) 2011-05-20 2016-11-24 株式会社半導体エネルギー研究所 記憶装置
TWI573136B (zh) 2011-05-20 2017-03-01 半導體能源研究所股份有限公司 儲存裝置及信號處理電路
JP6013682B2 (ja) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
TWI616873B (zh) 2011-05-20 2018-03-01 半導體能源研究所股份有限公司 儲存裝置及信號處理電路
JP5892852B2 (ja) 2011-05-20 2016-03-23 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
WO2012161059A1 (en) 2011-05-20 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
JP5951351B2 (ja) 2011-05-20 2016-07-13 株式会社半導体エネルギー研究所 加算器及び全加算器
TWI614995B (zh) 2011-05-20 2018-02-11 半導體能源研究所股份有限公司 鎖相迴路及使用此鎖相迴路之半導體裝置
JP5820335B2 (ja) 2011-05-20 2015-11-24 株式会社半導体エネルギー研究所 半導体装置
TWI570730B (zh) 2011-05-20 2017-02-11 半導體能源研究所股份有限公司 半導體裝置
JP6013680B2 (ja) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
TWI559683B (zh) 2011-05-20 2016-11-21 半導體能源研究所股份有限公司 半導體積體電路
US8508256B2 (en) 2011-05-20 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
JP5936908B2 (ja) 2011-05-20 2016-06-22 株式会社半導体エネルギー研究所 パリティビット出力回路およびパリティチェック回路
CN102789808B (zh) 2011-05-20 2018-03-06 株式会社半导体能源研究所 存储器装置和用于驱动存储器装置的方法
JP5886496B2 (ja) 2011-05-20 2016-03-16 株式会社半導体エネルギー研究所 半導体装置
JP5947099B2 (ja) 2011-05-20 2016-07-06 株式会社半導体エネルギー研究所 半導体装置
US20120298998A1 (en) 2011-05-25 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
KR101912971B1 (ko) 2011-05-26 2018-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 분주 회로 및 분주 회로를 이용한 반도체 장치
US9171840B2 (en) 2011-05-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8610482B2 (en) 2011-05-27 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Trimming circuit and method for driving trimming circuit
US8669781B2 (en) 2011-05-31 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5912844B2 (ja) 2011-05-31 2016-04-27 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
US9467047B2 (en) 2011-05-31 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, power source circuit, and semiconductor device
JP5890251B2 (ja) 2011-06-08 2016-03-22 株式会社半導体エネルギー研究所 通信方法
CN107419225B (zh) 2011-06-08 2020-08-04 株式会社半导体能源研究所 溅射靶材、溅射靶材的制造方法及薄膜形成方法
JP2013016243A (ja) 2011-06-09 2013-01-24 Semiconductor Energy Lab Co Ltd 記憶装置
JP6009226B2 (ja) 2011-06-10 2016-10-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8958263B2 (en) 2011-06-10 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6104522B2 (ja) 2011-06-10 2017-03-29 株式会社半導体エネルギー研究所 半導体装置
US8891285B2 (en) 2011-06-10 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP6005401B2 (ja) 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9299852B2 (en) 2011-06-16 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI557910B (zh) 2011-06-16 2016-11-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8804405B2 (en) 2011-06-16 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
SG11201504734VA (en) 2011-06-17 2015-07-30 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
US9166055B2 (en) 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8901554B2 (en) 2011-06-17 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including channel formation region including oxide semiconductor
US9099885B2 (en) 2011-06-17 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Wireless power feeding system
KR20130007426A (ko) 2011-06-17 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8673426B2 (en) 2011-06-29 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
US8878589B2 (en) 2011-06-30 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
WO2013005380A1 (en) 2011-07-01 2013-01-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8748886B2 (en) 2011-07-08 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9490241B2 (en) 2011-07-08 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a first inverter and a second inverter
US9385238B2 (en) 2011-07-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Transistor using oxide semiconductor
KR102014876B1 (ko) 2011-07-08 2019-08-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US9214474B2 (en) 2011-07-08 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9496138B2 (en) 2011-07-08 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device
US9318506B2 (en) 2011-07-08 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN103608925B (zh) * 2011-07-13 2017-06-13 应用材料公司 制造薄膜晶体管器件的方法
US9200952B2 (en) 2011-07-15 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photodetector and an analog arithmetic circuit
US8836626B2 (en) 2011-07-15 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8847220B2 (en) 2011-07-15 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013042117A (ja) 2011-07-15 2013-02-28 Semiconductor Energy Lab Co Ltd 半導体装置
US8946812B2 (en) 2011-07-21 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8643008B2 (en) 2011-07-22 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6013685B2 (ja) 2011-07-22 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
KR102168439B1 (ko) 2011-07-22 2020-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
US8716073B2 (en) 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device
US9012993B2 (en) 2011-07-22 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8718224B2 (en) 2011-08-05 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US8994019B2 (en) 2011-08-05 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6006572B2 (ja) 2011-08-18 2016-10-12 株式会社半導体エネルギー研究所 半導体装置
JP6128775B2 (ja) 2011-08-19 2017-05-17 株式会社半導体エネルギー研究所 半導体装置
TWI575494B (zh) 2011-08-19 2017-03-21 半導體能源研究所股份有限公司 半導體裝置的驅動方法
JP6116149B2 (ja) 2011-08-24 2017-04-19 株式会社半導体エネルギー研究所 半導体装置
TWI621243B (zh) 2011-08-29 2018-04-11 半導體能源研究所股份有限公司 半導體裝置
US9660092B2 (en) 2011-08-31 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor including oxygen release layer
US9252279B2 (en) 2011-08-31 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6016532B2 (ja) 2011-09-07 2016-10-26 株式会社半導体エネルギー研究所 半導体装置
JP6050054B2 (ja) 2011-09-09 2016-12-21 株式会社半導体エネルギー研究所 半導体装置
US8802493B2 (en) 2011-09-13 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor device
JP5825744B2 (ja) 2011-09-15 2015-12-02 株式会社半導体エネルギー研究所 パワー絶縁ゲート型電界効果トランジスタ
US9082663B2 (en) 2011-09-16 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8952379B2 (en) 2011-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5832399B2 (ja) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 発光装置
WO2013039126A1 (en) 2011-09-16 2013-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103022012B (zh) 2011-09-21 2017-03-01 株式会社半导体能源研究所 半导体存储装置
WO2013042562A1 (en) 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013042643A1 (en) 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Photodetector and method for driving photodetector
US9431545B2 (en) 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8841675B2 (en) 2011-09-23 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Minute transistor
KR102108572B1 (ko) 2011-09-26 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP2013084333A (ja) 2011-09-28 2013-05-09 Semiconductor Energy Lab Co Ltd シフトレジスタ回路
TWI605590B (zh) 2011-09-29 2017-11-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102304125B1 (ko) 2011-09-29 2021-09-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN105514174B (zh) 2011-09-29 2019-03-08 株式会社半导体能源研究所 半导体器件
KR101506303B1 (ko) 2011-09-29 2015-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제작 방법
JP5806905B2 (ja) 2011-09-30 2015-11-10 株式会社半導体エネルギー研究所 半導体装置
US8982607B2 (en) 2011-09-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
US20130087784A1 (en) 2011-10-05 2013-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6022880B2 (ja) 2011-10-07 2016-11-09 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP2013093561A (ja) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd 酸化物半導体膜及び半導体装置
US10014068B2 (en) 2011-10-07 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9117916B2 (en) 2011-10-13 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
US9287405B2 (en) 2011-10-13 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
JP5912394B2 (ja) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 半導体装置
JP6026839B2 (ja) 2011-10-13 2016-11-16 株式会社半導体エネルギー研究所 半導体装置
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US9018629B2 (en) 2011-10-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR20130040706A (ko) 2011-10-14 2013-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
SG11201504615UA (en) 2011-10-14 2015-07-30 Semiconductor Energy Lab Semiconductor device
KR20130043063A (ko) 2011-10-19 2013-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
TWI567985B (zh) 2011-10-21 2017-01-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP6226518B2 (ja) 2011-10-24 2017-11-08 株式会社半導体エネルギー研究所 半導体装置
KR101976212B1 (ko) 2011-10-24 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR102067051B1 (ko) 2011-10-24 2020-01-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR20130046357A (ko) 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6082562B2 (ja) 2011-10-27 2017-02-15 株式会社半導体エネルギー研究所 半導体装置
KR20140086954A (ko) 2011-10-28 2014-07-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR102012981B1 (ko) 2011-11-09 2019-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5933895B2 (ja) 2011-11-10 2016-06-15 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
JP6122275B2 (ja) 2011-11-11 2017-04-26 株式会社半導体エネルギー研究所 表示装置
US8796682B2 (en) 2011-11-11 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US8878177B2 (en) 2011-11-11 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9082861B2 (en) 2011-11-11 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Transistor with oxide semiconductor channel having protective layer
JP6076038B2 (ja) 2011-11-11 2017-02-08 株式会社半導体エネルギー研究所 表示装置の作製方法
CN103918025B (zh) 2011-11-11 2016-12-21 株式会社半导体能源研究所 信号线驱动电路以及液晶显示装置
US8969130B2 (en) 2011-11-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof
KR20130055521A (ko) 2011-11-18 2013-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자, 및 반도체 소자의 제작 방법, 및 반도체 소자를 포함하는 반도체 장치
US8951899B2 (en) 2011-11-25 2015-02-10 Semiconductor Energy Laboratory Method for manufacturing semiconductor device
US8962386B2 (en) 2011-11-25 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8829528B2 (en) 2011-11-25 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including groove portion extending beyond pixel electrode
JP6099368B2 (ja) 2011-11-25 2017-03-22 株式会社半導体エネルギー研究所 記憶装置
JP6125211B2 (ja) 2011-11-25 2017-05-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9057126B2 (en) 2011-11-29 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target and method for manufacturing semiconductor device
US20130137232A1 (en) 2011-11-30 2013-05-30 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
KR102072244B1 (ko) 2011-11-30 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US9076871B2 (en) 2011-11-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN103137701B (zh) 2011-11-30 2018-01-19 株式会社半导体能源研究所 晶体管及半导体装置
US8956929B2 (en) 2011-11-30 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI591611B (zh) 2011-11-30 2017-07-11 半導體能源研究所股份有限公司 半導體顯示裝置
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI621183B (zh) 2011-12-01 2018-04-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
JP2013137853A (ja) 2011-12-02 2013-07-11 Semiconductor Energy Lab Co Ltd 記憶装置および記憶装置の駆動方法
JP6050662B2 (ja) 2011-12-02 2016-12-21 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
EP2786404A4 (en) 2011-12-02 2015-07-15 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
JP5929136B2 (ja) * 2011-12-05 2016-06-01 セイコーエプソン株式会社 電気光学装置および電子機器
US9257422B2 (en) 2011-12-06 2016-02-09 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving signal processing circuit
JP6081171B2 (ja) 2011-12-09 2017-02-15 株式会社半導体エネルギー研究所 記憶装置
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
WO2013089115A1 (en) 2011-12-15 2013-06-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6105266B2 (ja) 2011-12-15 2017-03-29 株式会社半導体エネルギー研究所 記憶装置
JP2013149953A (ja) 2011-12-20 2013-08-01 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
US8785258B2 (en) 2011-12-20 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8748240B2 (en) 2011-12-22 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2013130802A (ja) 2011-12-22 2013-07-04 Semiconductor Energy Lab Co Ltd 半導体装置、画像表示装置、記憶装置、及び電子機器
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
JP6012450B2 (ja) 2011-12-23 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP6033071B2 (ja) 2011-12-23 2016-11-30 株式会社半導体エネルギー研究所 半導体装置
US8704221B2 (en) 2011-12-23 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6053490B2 (ja) 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8796683B2 (en) 2011-12-23 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013094547A1 (en) 2011-12-23 2013-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI569446B (zh) 2011-12-23 2017-02-01 半導體能源研究所股份有限公司 半導體元件、半導體元件的製造方法、及包含半導體元件的半導體裝置
TWI580189B (zh) 2011-12-23 2017-04-21 半導體能源研究所股份有限公司 位準位移電路及半導體積體電路
WO2013099537A1 (en) 2011-12-26 2013-07-04 Semiconductor Energy Laboratory Co., Ltd. Motion recognition device
KR102100425B1 (ko) 2011-12-27 2020-04-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
TWI584383B (zh) 2011-12-27 2017-05-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102103913B1 (ko) 2012-01-10 2020-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8836555B2 (en) 2012-01-18 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Circuit, sensor circuit, and semiconductor device using the sensor circuit
US8969867B2 (en) 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9099560B2 (en) 2012-01-20 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9040981B2 (en) 2012-01-20 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20130187150A1 (en) 2012-01-20 2013-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102433736B1 (ko) 2012-01-23 2022-08-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9653614B2 (en) 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102034911B1 (ko) 2012-01-25 2019-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US9419146B2 (en) 2012-01-26 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8956912B2 (en) 2012-01-26 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI642193B (zh) 2012-01-26 2018-11-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
JP6091905B2 (ja) 2012-01-26 2017-03-08 株式会社半導体エネルギー研究所 半導体装置
US9006733B2 (en) 2012-01-26 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
TWI561951B (en) 2012-01-30 2016-12-11 Semiconductor Energy Lab Co Ltd Power supply circuit
TWI562361B (en) 2012-02-02 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device
US9196741B2 (en) 2012-02-03 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102101167B1 (ko) 2012-02-03 2020-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9362417B2 (en) 2012-02-03 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916424B2 (en) 2012-02-07 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9859114B2 (en) 2012-02-08 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device with an oxygen-controlling insulating layer
US20130207111A1 (en) 2012-02-09 2013-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device
JP6125850B2 (ja) 2012-02-09 2017-05-10 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US9112037B2 (en) 2012-02-09 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5981157B2 (ja) 2012-02-09 2016-08-31 株式会社半導体エネルギー研究所 半導体装置
US8817516B2 (en) 2012-02-17 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Memory circuit and semiconductor device
JP2014063557A (ja) 2012-02-24 2014-04-10 Semiconductor Energy Lab Co Ltd 記憶装置及び半導体装置
US20130221345A1 (en) 2012-02-28 2013-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8988152B2 (en) 2012-02-29 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6151530B2 (ja) 2012-02-29 2017-06-21 株式会社半導体エネルギー研究所 イメージセンサ、カメラ、及び監視システム
US9553200B2 (en) 2012-02-29 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9312257B2 (en) 2012-02-29 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6046514B2 (ja) 2012-03-01 2016-12-14 株式会社半導体エネルギー研究所 半導体装置
JP2013183001A (ja) 2012-03-01 2013-09-12 Semiconductor Energy Lab Co Ltd 半導体装置
US8975917B2 (en) 2012-03-01 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9735280B2 (en) 2012-03-02 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film
US9287370B2 (en) 2012-03-02 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Memory device comprising a transistor including an oxide semiconductor and semiconductor device including the same
US9176571B2 (en) 2012-03-02 2015-11-03 Semiconductor Energy Laboratories Co., Ltd. Microprocessor and method for driving microprocessor
JP6100559B2 (ja) 2012-03-05 2017-03-22 株式会社半導体エネルギー研究所 半導体記憶装置
JP6041707B2 (ja) 2012-03-05 2016-12-14 株式会社半導体エネルギー研究所 ラッチ回路および半導体装置
US8995218B2 (en) 2012-03-07 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8981370B2 (en) 2012-03-08 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN104160295B (zh) 2012-03-09 2017-09-15 株式会社半导体能源研究所 半导体装置的驱动方法
KR20140136975A (ko) 2012-03-13 2014-12-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 그 구동 방법
US9058892B2 (en) 2012-03-14 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and shift register
KR102108248B1 (ko) 2012-03-14 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막, 트랜지스터, 및 반도체 장치
JP6168795B2 (ja) 2012-03-14 2017-07-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9117409B2 (en) 2012-03-14 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device with transistor and capacitor discharging gate of driving electrode and oxide semiconductor layer
US9541386B2 (en) 2012-03-21 2017-01-10 Semiconductor Energy Laboratory Co., Ltd. Distance measurement device and distance measurement system
US9349849B2 (en) 2012-03-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the semiconductor device
US9324449B2 (en) 2012-03-28 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device
JP6169376B2 (ja) 2012-03-28 2017-07-26 株式会社半導体エネルギー研究所 電池管理ユニット、保護回路、蓄電装置
JP2013229013A (ja) 2012-03-29 2013-11-07 Semiconductor Energy Lab Co Ltd アレイコントローラ及びストレージシステム
US9786793B2 (en) 2012-03-29 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer including regions with different concentrations of resistance-reducing elements
JP6139187B2 (ja) 2012-03-29 2017-05-31 株式会社半導体エネルギー研究所 半導体装置
WO2013146154A1 (en) 2012-03-29 2013-10-03 Semiconductor Energy Laboratory Co., Ltd. Power supply control device
US8941113B2 (en) 2012-03-30 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
US8999773B2 (en) 2012-04-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Processing method of stacked-layer film and manufacturing method of semiconductor device
US8901556B2 (en) 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
US9711110B2 (en) 2012-04-06 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Display device comprising grayscale conversion portion and display portion
US9793444B2 (en) 2012-04-06 2017-10-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US8947155B2 (en) 2012-04-06 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Solid-state relay
JP5975907B2 (ja) 2012-04-11 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
US9276121B2 (en) 2012-04-12 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9208849B2 (en) 2012-04-12 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device, and electronic device
JP6059566B2 (ja) 2012-04-13 2017-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6128906B2 (ja) 2012-04-13 2017-05-17 株式会社半導体エネルギー研究所 半導体装置
US9030232B2 (en) 2012-04-13 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Isolator circuit and semiconductor device
KR102932705B1 (ko) 2012-04-13 2026-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6143423B2 (ja) 2012-04-16 2017-06-07 株式会社半導体エネルギー研究所 半導体装置の製造方法
JP6076612B2 (ja) 2012-04-17 2017-02-08 株式会社半導体エネルギー研究所 半導体装置
JP6001308B2 (ja) 2012-04-17 2016-10-05 株式会社半導体エネルギー研究所 半導体装置
US9219164B2 (en) 2012-04-20 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor channel
US9029863B2 (en) 2012-04-20 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9236408B2 (en) 2012-04-25 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including photodiode
US9230683B2 (en) 2012-04-25 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9006024B2 (en) 2012-04-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8860022B2 (en) 2012-04-27 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP6199583B2 (ja) 2012-04-27 2017-09-20 株式会社半導体エネルギー研究所 半導体装置
US9331689B2 (en) 2012-04-27 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Power supply circuit and semiconductor device including the same
US9285848B2 (en) 2012-04-27 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Power reception control device, power reception device, power transmission and reception system, and electronic device
JP6228381B2 (ja) 2012-04-30 2017-11-08 株式会社半導体エネルギー研究所 半導体装置
JP6100071B2 (ja) 2012-04-30 2017-03-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9048323B2 (en) 2012-04-30 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9703704B2 (en) 2012-05-01 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9007090B2 (en) 2012-05-01 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of driving semiconductor device
JP6035195B2 (ja) 2012-05-01 2016-11-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6227890B2 (ja) 2012-05-02 2017-11-08 株式会社半導体エネルギー研究所 信号処理回路および制御回路
US9104395B2 (en) 2012-05-02 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Processor and driving method thereof
US8866510B2 (en) 2012-05-02 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013250965A (ja) 2012-05-02 2013-12-12 Semiconductor Energy Lab Co Ltd 半導体装置およびその駆動方法
JP6243136B2 (ja) 2012-05-02 2017-12-06 株式会社半導体エネルギー研究所 スイッチングコンバータ
CN106298772A (zh) 2012-05-02 2017-01-04 株式会社半导体能源研究所 可编程逻辑器件
KR102025722B1 (ko) 2012-05-02 2019-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 온도 센서 회로, 및 온도 센서 회로를 사용한 반도체 장치
KR20130125717A (ko) 2012-05-09 2013-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
KR102748642B1 (ko) 2012-05-10 2025-01-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN104285302B (zh) 2012-05-10 2017-08-22 株式会社半导体能源研究所 半导体装置
KR102069158B1 (ko) 2012-05-10 2020-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 배선의 형성 방법, 반도체 장치, 및 반도체 장치의 제작 방법
KR102087443B1 (ko) 2012-05-11 2020-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
DE102013207324A1 (de) 2012-05-11 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und elektronisches Gerät
TWI670553B (zh) 2012-05-16 2019-09-01 日商半導體能源研究所股份有限公司 半導體裝置及觸控面板
US8929128B2 (en) 2012-05-17 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Storage device and writing method of the same
US9817032B2 (en) 2012-05-23 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Measurement device
JP2014003594A (ja) 2012-05-25 2014-01-09 Semiconductor Energy Lab Co Ltd 半導体装置及びその駆動方法
KR102164990B1 (ko) 2012-05-25 2020-10-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 소자의 구동 방법
KR102059218B1 (ko) 2012-05-25 2019-12-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 로직 디바이스 및 반도체 장치
JP6050721B2 (ja) 2012-05-25 2016-12-21 株式会社半導体エネルギー研究所 半導体装置
JP6250955B2 (ja) 2012-05-25 2017-12-20 株式会社半導体エネルギー研究所 半導体装置の駆動方法
US9147706B2 (en) 2012-05-29 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having sensor circuit having amplifier circuit
JP6377317B2 (ja) 2012-05-30 2018-08-22 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
US9048265B2 (en) 2012-05-31 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising oxide semiconductor layer
WO2013180040A1 (en) 2012-05-31 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8995607B2 (en) 2012-05-31 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
JP6158588B2 (ja) 2012-05-31 2017-07-05 株式会社半導体エネルギー研究所 発光装置
WO2013179922A1 (en) 2012-05-31 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8785928B2 (en) 2012-05-31 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9343120B2 (en) 2012-06-01 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. High speed processing unit with non-volatile register
US9135182B2 (en) 2012-06-01 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Central processing unit and driving method thereof
WO2013180016A1 (en) 2012-06-01 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and alarm device
US8872174B2 (en) 2012-06-01 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9916793B2 (en) 2012-06-01 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving the same
US9153699B2 (en) 2012-06-15 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multiple oxide semiconductor layers
US8901557B2 (en) 2012-06-15 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9059219B2 (en) 2012-06-27 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8873308B2 (en) 2012-06-29 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
US9742378B2 (en) 2012-06-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit and semiconductor device
WO2014002920A1 (en) 2012-06-29 2014-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102082794B1 (ko) 2012-06-29 2020-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법, 및 표시 장치
CN102751307A (zh) * 2012-06-29 2012-10-24 昆山工研院新型平板显示技术中心有限公司 一种可进行透明不透明转换的显示器
KR102161077B1 (ko) 2012-06-29 2020-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI596778B (zh) 2012-06-29 2017-08-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US9083327B2 (en) 2012-07-06 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US9054678B2 (en) 2012-07-06 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9190525B2 (en) 2012-07-06 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer
KR102099262B1 (ko) 2012-07-11 2020-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치, 및 액정 표시 장치의 구동 방법
JP2014032399A (ja) 2012-07-13 2014-02-20 Semiconductor Energy Lab Co Ltd 液晶表示装置
JP6006558B2 (ja) 2012-07-17 2016-10-12 株式会社半導体エネルギー研究所 半導体装置及びその製造方法
WO2014013958A1 (en) 2012-07-20 2014-01-23 Semiconductor Energy Laboratory Co., Ltd. Display device
JP6185311B2 (ja) 2012-07-20 2017-08-23 株式会社半導体エネルギー研究所 電源制御回路、及び信号処理回路
KR20250154556A (ko) 2012-07-20 2025-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 및 표시 장치를 포함하는 전자 장치
KR102141977B1 (ko) 2012-07-20 2020-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
KR20140013931A (ko) 2012-07-26 2014-02-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
JP2014042004A (ja) 2012-07-26 2014-03-06 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP6224931B2 (ja) 2012-07-27 2017-11-01 株式会社半導体エネルギー研究所 半導体装置
JP6134598B2 (ja) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 半導体装置
JP2014045175A (ja) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd 半導体装置
CN104508549B (zh) 2012-08-03 2018-02-06 株式会社半导体能源研究所 半导体装置
SG11201505225TA (en) 2012-08-03 2015-08-28 Semiconductor Energy Lab Oxide semiconductor stacked film and semiconductor device
US10557192B2 (en) 2012-08-07 2020-02-11 Semiconductor Energy Laboratory Co., Ltd. Method for using sputtering target and method for forming oxide film
US9885108B2 (en) 2012-08-07 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming sputtering target
US9245958B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102171650B1 (ko) 2012-08-10 2020-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8937307B2 (en) 2012-08-10 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6211843B2 (ja) 2012-08-10 2017-10-11 株式会社半導体エネルギー研究所 半導体装置
TWI581404B (zh) 2012-08-10 2017-05-01 半導體能源研究所股份有限公司 半導體裝置以及該半導體裝置的驅動方法
JP6220597B2 (ja) 2012-08-10 2017-10-25 株式会社半導体エネルギー研究所 半導体装置
JP2014057298A (ja) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
US9929276B2 (en) 2012-08-10 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014057296A (ja) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
JP2014199899A (ja) 2012-08-10 2014-10-23 株式会社半導体エネルギー研究所 半導体装置
WO2014025002A1 (en) 2012-08-10 2014-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US8872120B2 (en) 2012-08-23 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and method for driving the same
KR102069683B1 (ko) 2012-08-24 2020-01-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 방사선 검출 패널, 방사선 촬상 장치, 및 화상 진단 장치
KR102161078B1 (ko) 2012-08-28 2020-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제작 방법
US9625764B2 (en) 2012-08-28 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
KR20140029202A (ko) 2012-08-28 2014-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
DE102013216824B4 (de) 2012-08-28 2024-10-17 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
TWI657539B (zh) 2012-08-31 2019-04-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置
WO2014034820A1 (en) 2012-09-03 2014-03-06 Semiconductor Energy Laboratory Co., Ltd. Microcontroller
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
DE102013217278B4 (de) 2012-09-12 2017-03-30 Semiconductor Energy Laboratory Co., Ltd. Photodetektorschaltung, Bildgebungsvorrichtung und Verfahren zum Ansteuern einer Photodetektorschaltung
KR102679509B1 (ko) 2012-09-13 2024-07-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9018624B2 (en) 2012-09-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
US8981372B2 (en) 2012-09-13 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
TW202605926A (zh) 2012-09-14 2026-02-01 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8927985B2 (en) 2012-09-20 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014046222A1 (en) 2012-09-24 2014-03-27 Semiconductor Energy Laboratory Co., Ltd. Display device
TW202431646A (zh) 2012-09-24 2024-08-01 日商半導體能源研究所股份有限公司 半導體裝置
JP6290576B2 (ja) 2012-10-12 2018-03-07 株式会社半導体エネルギー研究所 液晶表示装置及びその駆動方法
KR102226090B1 (ko) 2012-10-12 2021-03-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법 및 반도체 장치의 제조 장치
JP6351947B2 (ja) 2012-10-12 2018-07-04 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
TWI681233B (zh) 2012-10-12 2020-01-01 日商半導體能源研究所股份有限公司 液晶顯示裝置、觸控面板及液晶顯示裝置的製造方法
WO2014061762A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6283191B2 (ja) 2012-10-17 2018-02-21 株式会社半導体エネルギー研究所 半導体装置
JP6059501B2 (ja) 2012-10-17 2017-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9166021B2 (en) 2012-10-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2014061567A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
TWI591966B (zh) 2012-10-17 2017-07-11 半導體能源研究所股份有限公司 可編程邏輯裝置及可編程邏輯裝置的驅動方法
JP6021586B2 (ja) 2012-10-17 2016-11-09 株式会社半導体エネルギー研究所 半導体装置
JP5951442B2 (ja) 2012-10-17 2016-07-13 株式会社半導体エネルギー研究所 半導体装置
DE112013005029T5 (de) 2012-10-17 2015-07-30 Semiconductor Energy Laboratory Co., Ltd. Mikrocontroller und Herstellungsverfahren dafür
WO2014061535A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014082388A (ja) 2012-10-17 2014-05-08 Semiconductor Energy Lab Co Ltd 半導体装置
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
JP6204145B2 (ja) 2012-10-23 2017-09-27 株式会社半導体エネルギー研究所 半導体装置
KR102279459B1 (ko) 2012-10-24 2021-07-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2014065301A1 (en) 2012-10-24 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI637517B (zh) 2012-10-24 2018-10-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP6300489B2 (ja) 2012-10-24 2018-03-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2014065343A1 (en) 2012-10-24 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014065389A1 (en) 2012-10-25 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Central control system
JP6219562B2 (ja) 2012-10-30 2017-10-25 株式会社半導体エネルギー研究所 表示装置及び電子機器
KR102178068B1 (ko) 2012-11-06 2020-11-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
KR20230152795A (ko) 2012-11-08 2023-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 디스플레이 장치
TWI608616B (zh) 2012-11-15 2017-12-11 半導體能源研究所股份有限公司 半導體裝置
TWI605593B (zh) 2012-11-15 2017-11-11 半導體能源研究所股份有限公司 半導體裝置
JP6220641B2 (ja) 2012-11-15 2017-10-25 株式会社半導体エネルギー研究所 半導体装置
TWI620323B (zh) 2012-11-16 2018-04-01 半導體能源研究所股份有限公司 半導體裝置
TWI613813B (zh) 2012-11-16 2018-02-01 半導體能源研究所股份有限公司 半導體裝置
JP6285150B2 (ja) 2012-11-16 2018-02-28 株式会社半導体エネルギー研究所 半導体装置
JP6317059B2 (ja) 2012-11-16 2018-04-25 株式会社半導体エネルギー研究所 半導体装置及び表示装置
TWI627483B (zh) 2012-11-28 2018-06-21 半導體能源研究所股份有限公司 顯示裝置及電視接收機
US9263531B2 (en) 2012-11-28 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, film formation method thereof, and semiconductor device
KR102148549B1 (ko) 2012-11-28 2020-08-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
TWI703723B (zh) 2012-11-28 2020-09-01 日商半導體能源研究所股份有限公司 顯示裝置
US9412764B2 (en) 2012-11-28 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
US9594281B2 (en) 2012-11-30 2017-03-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2014130336A (ja) 2012-11-30 2014-07-10 Semiconductor Energy Lab Co Ltd 表示装置
TWI624949B (zh) 2012-11-30 2018-05-21 半導體能源研究所股份有限公司 半導體裝置
US9246011B2 (en) 2012-11-30 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN104823283B (zh) 2012-11-30 2018-04-27 株式会社半导体能源研究所 半导体装置
US9153649B2 (en) 2012-11-30 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for evaluating semiconductor device
JP2014135478A (ja) 2012-12-03 2014-07-24 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US9349593B2 (en) 2012-12-03 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR102207028B1 (ko) 2012-12-03 2021-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6254834B2 (ja) 2012-12-06 2017-12-27 株式会社半導体エネルギー研究所 半導体装置
US9577446B2 (en) 2012-12-13 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Power storage system and power storage device storing data for the identifying power storage device
TWI611419B (zh) 2012-12-24 2018-01-11 半導體能源研究所股份有限公司 可程式邏輯裝置及半導體裝置
KR102241249B1 (ko) 2012-12-25 2021-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 저항 소자, 표시 장치, 및 전자기기
WO2014103901A1 (en) 2012-12-25 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9905585B2 (en) 2012-12-25 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising capacitor
CN104885230B (zh) 2012-12-25 2018-02-23 株式会社半导体能源研究所 半导体装置
US9437273B2 (en) 2012-12-26 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014143410A (ja) 2012-12-28 2014-08-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR102495290B1 (ko) 2012-12-28 2023-02-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102151696B1 (ko) 2012-12-28 2020-09-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제작 방법
US9316695B2 (en) 2012-12-28 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6329762B2 (ja) 2012-12-28 2018-05-23 株式会社半導体エネルギー研究所 半導体装置
TWI607510B (zh) 2012-12-28 2017-12-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US9391096B2 (en) 2013-01-18 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI614813B (zh) 2013-01-21 2018-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
US9466725B2 (en) 2013-01-24 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9190172B2 (en) 2013-01-24 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6223198B2 (ja) 2013-01-24 2017-11-01 株式会社半導体エネルギー研究所 半導体装置
JP5807076B2 (ja) 2013-01-24 2015-11-10 株式会社半導体エネルギー研究所 半導体装置
TWI619010B (zh) 2013-01-24 2018-03-21 半導體能源研究所股份有限公司 半導體裝置
US8981374B2 (en) 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9105658B2 (en) 2013-01-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor layer
US9076825B2 (en) 2013-01-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR102112367B1 (ko) 2013-02-12 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI618252B (zh) 2013-02-12 2018-03-11 半導體能源研究所股份有限公司 半導體裝置
WO2014125979A1 (en) 2013-02-13 2014-08-21 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US8952723B2 (en) 2013-02-13 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9231111B2 (en) 2013-02-13 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9190527B2 (en) 2013-02-13 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
US9318484B2 (en) 2013-02-20 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI611566B (zh) 2013-02-25 2018-01-11 Semiconductor Energy Laboratory Co., Ltd. 顯示裝置和電子裝置
US9293544B2 (en) 2013-02-26 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having buried channel structure
TWI612321B (zh) 2013-02-27 2018-01-21 半導體能源研究所股份有限公司 成像裝置
US9373711B2 (en) 2013-02-27 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI611567B (zh) 2013-02-27 2018-01-11 半導體能源研究所股份有限公司 半導體裝置、驅動電路及顯示裝置
JP2014195243A (ja) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd 半導体装置
KR102238682B1 (ko) 2013-02-28 2021-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
JP6141777B2 (ja) 2013-02-28 2017-06-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2014195241A (ja) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd 半導体装置
US9647152B2 (en) 2013-03-01 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Sensor circuit and semiconductor device including sensor circuit
JP6250883B2 (ja) 2013-03-01 2017-12-20 株式会社半導体エネルギー研究所 半導体装置
KR102153110B1 (ko) 2013-03-06 2020-09-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체막 및 반도체 장치
US9269315B2 (en) 2013-03-08 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8947121B2 (en) 2013-03-12 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
TWI644433B (zh) 2013-03-13 2018-12-11 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置
JP2014199709A (ja) 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 記憶装置、半導体装置
US9294075B2 (en) 2013-03-14 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20150128820A (ko) 2013-03-14 2015-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 구동 방법 및 반도체 장치
JP6298662B2 (ja) 2013-03-14 2018-03-20 株式会社半導体エネルギー研究所 半導体装置
JP6283237B2 (ja) 2013-03-14 2018-02-21 株式会社半導体エネルギー研究所 半導体装置
KR20150128823A (ko) 2013-03-14 2015-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 구동 방법 및 반도체 장치
KR102290247B1 (ko) 2013-03-14 2021-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
TWI677193B (zh) 2013-03-15 2019-11-11 日商半導體能源研究所股份有限公司 半導體裝置
US9786350B2 (en) 2013-03-18 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9153650B2 (en) 2013-03-19 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor
US9577107B2 (en) 2013-03-19 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and method for forming oxide semiconductor film
JP6355374B2 (ja) 2013-03-22 2018-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6093726B2 (ja) 2013-03-22 2017-03-08 株式会社半導体エネルギー研究所 半導体装置
US9007092B2 (en) 2013-03-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6272713B2 (ja) 2013-03-25 2018-01-31 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス及び半導体装置
WO2014157019A1 (en) 2013-03-25 2014-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10347769B2 (en) 2013-03-25 2019-07-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multi-layer source/drain electrodes
JP6376788B2 (ja) 2013-03-26 2018-08-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP6316630B2 (ja) 2013-03-26 2018-04-25 株式会社半導体エネルギー研究所 半導体装置
JP6395409B2 (ja) 2013-03-27 2018-09-26 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2014209209A (ja) 2013-03-28 2014-11-06 株式会社半導体エネルギー研究所 表示装置
US9368636B2 (en) 2013-04-01 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device comprising a plurality of oxide semiconductor layers
JP6300589B2 (ja) 2013-04-04 2018-03-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9112460B2 (en) 2013-04-05 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Signal processing device
JP6198434B2 (ja) 2013-04-11 2017-09-20 株式会社半導体エネルギー研究所 表示装置及び電子機器
JP6224338B2 (ja) 2013-04-11 2017-11-01 株式会社半導体エネルギー研究所 半導体装置、表示装置及び半導体装置の作製方法
US10304859B2 (en) 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
JP6280794B2 (ja) 2013-04-12 2018-02-14 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法
TWI620324B (zh) 2013-04-12 2018-04-01 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置
JP6456598B2 (ja) 2013-04-19 2019-01-23 株式会社半導体エネルギー研究所 表示装置
US9915848B2 (en) 2013-04-19 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP6333028B2 (ja) 2013-04-19 2018-05-30 株式会社半導体エネルギー研究所 記憶装置及び半導体装置
TWI647559B (zh) 2013-04-24 2019-01-11 Semiconductor Energy Laboratory Co., Ltd. 顯示裝置
US9893192B2 (en) 2013-04-24 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6401483B2 (ja) 2013-04-26 2018-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6396671B2 (ja) 2013-04-26 2018-09-26 株式会社半導体エネルギー研究所 半導体装置
TWI644434B (zh) 2013-04-29 2018-12-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI631711B (zh) 2013-05-01 2018-08-01 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置
KR102222344B1 (ko) 2013-05-02 2021-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9231002B2 (en) 2013-05-03 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9882058B2 (en) 2013-05-03 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014181785A1 (en) 2013-05-09 2014-11-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9246476B2 (en) 2013-05-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit
US9704894B2 (en) 2013-05-10 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Display device including pixel electrode including oxide
TWI621337B (zh) 2013-05-14 2018-04-11 半導體能源研究所股份有限公司 信號處理裝置
TWI639235B (zh) 2013-05-16 2018-10-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置
US9312392B2 (en) 2013-05-16 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI618058B (zh) 2013-05-16 2018-03-11 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置
TWI690085B (zh) 2013-05-16 2020-04-01 日商半導體能源研究所股份有限公司 半導體裝置
US9454923B2 (en) 2013-05-17 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI638519B (zh) 2013-05-17 2018-10-11 半導體能源研究所股份有限公司 可程式邏輯裝置及半導體裝置
US9209795B2 (en) 2013-05-17 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Signal processing device and measuring method
US10032872B2 (en) 2013-05-17 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and apparatus for manufacturing semiconductor device
US9754971B2 (en) 2013-05-18 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9647125B2 (en) 2013-05-20 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102442752B1 (ko) 2013-05-20 2022-09-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN109860278A (zh) 2013-05-20 2019-06-07 株式会社半导体能源研究所 半导体装置
DE102014019794B4 (de) 2013-05-20 2024-10-24 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
US9293599B2 (en) 2013-05-20 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI664731B (zh) 2013-05-20 2019-07-01 半導體能源研究所股份有限公司 半導體裝置
US9343579B2 (en) 2013-05-20 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10416504B2 (en) 2013-05-21 2019-09-17 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR20160009626A (ko) 2013-05-21 2016-01-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 그 형성 방법
CN103325792A (zh) * 2013-05-23 2013-09-25 合肥京东方光电科技有限公司 一种阵列基板及制备方法、显示装置
TWI649606B (zh) 2013-06-05 2019-02-01 日商半導體能源研究所股份有限公司 顯示裝置及電子裝置
JP6400336B2 (ja) 2013-06-05 2018-10-03 株式会社半導体エネルギー研究所 半導体装置
JP2015195327A (ja) 2013-06-05 2015-11-05 株式会社半導体エネルギー研究所 半導体装置
JP6475424B2 (ja) 2013-06-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
TWI624936B (zh) 2013-06-05 2018-05-21 半導體能源研究所股份有限公司 顯示裝置
US9806198B2 (en) 2013-06-05 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9773915B2 (en) 2013-06-11 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI641112B (zh) 2013-06-13 2018-11-11 半導體能源研究所股份有限公司 半導體裝置
JP6368155B2 (ja) 2013-06-18 2018-08-01 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
TWI652822B (zh) 2013-06-19 2019-03-01 日商半導體能源研究所股份有限公司 氧化物半導體膜及其形成方法
US9035301B2 (en) 2013-06-19 2015-05-19 Semiconductor Energy Laboratory Co., Ltd. Imaging device
KR102257058B1 (ko) 2013-06-21 2021-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9515094B2 (en) 2013-06-26 2016-12-06 Semiconductor Energy Laboratory Co., Ltd. Storage device and semiconductor device
KR102269460B1 (ko) 2013-06-27 2021-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6352070B2 (ja) 2013-07-05 2018-07-04 株式会社半導体エネルギー研究所 半導体装置
US9666697B2 (en) 2013-07-08 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device including an electron trap layer
US9312349B2 (en) 2013-07-08 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US20150008428A1 (en) 2013-07-08 2015-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
TWI622053B (zh) 2013-07-10 2018-04-21 半導體能源研究所股份有限公司 半導體裝置
US9293480B2 (en) 2013-07-10 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
US9006736B2 (en) 2013-07-12 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6400961B2 (ja) 2013-07-12 2018-10-03 株式会社半導体エネルギー研究所 表示装置
JP6322503B2 (ja) 2013-07-16 2018-05-09 株式会社半導体エネルギー研究所 半導体装置
JP6516978B2 (ja) 2013-07-17 2019-05-22 株式会社半導体エネルギー研究所 半導体装置
TWI621130B (zh) 2013-07-18 2018-04-11 半導體能源研究所股份有限公司 半導體裝置及用於製造半導體裝置之方法
TWI608523B (zh) 2013-07-19 2017-12-11 半導體能源研究所股份有限公司 Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device
US9379138B2 (en) 2013-07-19 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device with drive voltage dependent on external light intensity
US9395070B2 (en) 2013-07-19 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Support of flexible component and light-emitting device
TWI632688B (zh) 2013-07-25 2018-08-11 半導體能源研究所股份有限公司 半導體裝置以及半導體裝置的製造方法
US10529740B2 (en) 2013-07-25 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including semiconductor layer and conductive layer
TWI636309B (zh) 2013-07-25 2018-09-21 日商半導體能源研究所股份有限公司 液晶顯示裝置及電子裝置
TWI641208B (zh) 2013-07-26 2018-11-11 Semiconductor Energy Laboratory Co., Ltd. 直流對直流轉換器
JP6410496B2 (ja) 2013-07-31 2018-10-24 株式会社半導体エネルギー研究所 マルチゲート構造のトランジスタ
JP6460592B2 (ja) 2013-07-31 2019-01-30 株式会社半導体エネルギー研究所 Ｄｃｄｃコンバータ、及び半導体装置
US9343288B2 (en) 2013-07-31 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9496330B2 (en) 2013-08-02 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
TWI635750B (zh) 2013-08-02 2018-09-11 半導體能源研究所股份有限公司 攝像裝置以及其工作方法
JP2015053477A (ja) 2013-08-05 2015-03-19 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
JP6345023B2 (ja) 2013-08-07 2018-06-20 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US9601591B2 (en) 2013-08-09 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9299855B2 (en) 2013-08-09 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having dual gate insulating layers
JP6329843B2 (ja) 2013-08-19 2018-05-23 株式会社半導体エネルギー研究所 半導体装置
US9374048B2 (en) 2013-08-20 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing device, and driving method and program thereof
TWI663820B (zh) 2013-08-21 2019-06-21 日商半導體能源研究所股份有限公司 電荷泵電路以及具備電荷泵電路的半導體裝置
KR102232133B1 (ko) 2013-08-22 2021-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102244553B1 (ko) 2013-08-23 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 용량 소자 및 반도체 장치
US9443987B2 (en) 2013-08-23 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI749810B (zh) 2013-08-28 2021-12-11 日商半導體能源研究所股份有限公司 顯示裝置
JP6426402B2 (ja) 2013-08-30 2018-11-21 株式会社半導体エネルギー研究所 表示装置
US9360564B2 (en) 2013-08-30 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Imaging device
WO2015030150A1 (en) 2013-08-30 2015-03-05 Semiconductor Energy Laboratory Co., Ltd. Storage circuit and semiconductor device
US9552767B2 (en) 2013-08-30 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9590109B2 (en) 2013-08-30 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9449853B2 (en) 2013-09-04 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising electron trap layer
JP6406926B2 (ja) 2013-09-04 2018-10-17 株式会社半導体エネルギー研究所 半導体装置
US9607991B2 (en) 2013-09-05 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10008513B2 (en) 2013-09-05 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6345544B2 (ja) 2013-09-05 2018-06-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6401977B2 (ja) 2013-09-06 2018-10-10 株式会社半導体エネルギー研究所 半導体装置
KR102294507B1 (ko) 2013-09-06 2021-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9590110B2 (en) 2013-09-10 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Ultraviolet light sensor circuit
TWI640014B (zh) 2013-09-11 2018-11-01 半導體能源研究所股份有限公司 記憶體裝置、半導體裝置及電子裝置
US9893194B2 (en) 2013-09-12 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9269822B2 (en) 2013-09-12 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9716003B2 (en) 2013-09-13 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
CN105531621B (zh) 2013-09-13 2019-11-12 株式会社半导体能源研究所 显示装置
US9805952B2 (en) 2013-09-13 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9461126B2 (en) 2013-09-13 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Transistor, clocked inverter circuit, sequential circuit, and semiconductor device including sequential circuit
TWI646690B (zh) 2013-09-13 2019-01-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9887297B2 (en) 2013-09-17 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer in which thickness of the oxide semiconductor layer is greater than or equal to width of the oxide semiconductor layer
US9269915B2 (en) 2013-09-18 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Display device
JP6347704B2 (ja) 2013-09-18 2018-06-27 株式会社半導体エネルギー研究所 半導体装置
TWI677989B (zh) 2013-09-19 2019-11-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP2015084418A (ja) 2013-09-23 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9397153B2 (en) 2013-09-23 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6570817B2 (ja) 2013-09-23 2019-09-04 株式会社半導体エネルギー研究所 半導体装置
JP6383616B2 (ja) 2013-09-25 2018-08-29 株式会社半導体エネルギー研究所 半導体装置
US9799774B2 (en) 2013-09-26 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Switch circuit, semiconductor device, and system
JP6392603B2 (ja) 2013-09-27 2018-09-19 株式会社半導体エネルギー研究所 半導体装置
JP6581765B2 (ja) 2013-10-02 2019-09-25 株式会社半導体エネルギー研究所 ブートストラップ回路、およびブートストラップ回路を有する半導体装置
JP6386323B2 (ja) 2013-10-04 2018-09-05 株式会社半導体エネルギー研究所 半導体装置
TWI688102B (zh) 2013-10-10 2020-03-11 日商半導體能源研究所股份有限公司 半導體裝置
KR102183763B1 (ko) 2013-10-11 2020-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP6591739B2 (ja) 2013-10-16 2019-10-16 株式会社半導体エネルギー研究所 演算処理装置の駆動方法
TWI642170B (zh) 2013-10-18 2018-11-21 Semiconductor Energy Laboratory Co., Ltd. 顯示裝置及電子裝置
TWI621127B (zh) 2013-10-18 2018-04-11 半導體能源研究所股份有限公司 運算處理裝置及其驅動方法
WO2015060318A1 (en) 2013-10-22 2015-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
KR20160074514A (ko) 2013-10-22 2016-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR102244460B1 (ko) 2013-10-22 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9276128B2 (en) 2013-10-22 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and etchant used for the same
JP2015179247A (ja) 2013-10-22 2015-10-08 株式会社半導体エネルギー研究所 表示装置
DE102014220672A1 (de) 2013-10-22 2015-05-07 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
US9455349B2 (en) 2013-10-22 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor with reduced impurity diffusion
JP6625796B2 (ja) 2013-10-25 2019-12-25 株式会社半導体エネルギー研究所 表示装置
JP6457239B2 (ja) 2013-10-31 2019-01-23 株式会社半導体エネルギー研究所 半導体装置
US9590111B2 (en) 2013-11-06 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP6478562B2 (ja) 2013-11-07 2019-03-06 株式会社半導体エネルギー研究所 半導体装置
JP6440457B2 (ja) 2013-11-07 2018-12-19 株式会社半導体エネルギー研究所 半導体装置
US9385054B2 (en) 2013-11-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing device and manufacturing method thereof
JP2015118724A (ja) 2013-11-13 2015-06-25 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の駆動方法
JP6426437B2 (ja) 2013-11-22 2018-11-21 株式会社半導体エネルギー研究所 半導体装置
JP6393590B2 (ja) 2013-11-22 2018-09-19 株式会社半導体エネルギー研究所 半導体装置
JP6486660B2 (ja) 2013-11-27 2019-03-20 株式会社半導体エネルギー研究所 表示装置
US20150155313A1 (en) 2013-11-29 2015-06-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2016001712A (ja) 2013-11-29 2016-01-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9882014B2 (en) 2013-11-29 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102516162B1 (ko) 2013-12-02 2023-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제조방법
KR102264987B1 (ko) 2013-12-02 2021-06-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP6496132B2 (ja) 2013-12-02 2019-04-03 株式会社半導体エネルギー研究所 半導体装置
US9991392B2 (en) 2013-12-03 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2016027597A (ja) 2013-12-06 2016-02-18 株式会社半導体エネルギー研究所 半導体装置
US9349751B2 (en) 2013-12-12 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9627413B2 (en) 2013-12-12 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
TWI642186B (zh) 2013-12-18 2018-11-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置
TWI721409B (zh) 2013-12-19 2021-03-11 日商半導體能源研究所股份有限公司 半導體裝置
JP6444714B2 (ja) 2013-12-20 2018-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9379192B2 (en) 2013-12-20 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015097586A1 (en) 2013-12-25 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015097596A1 (en) 2013-12-26 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9960280B2 (en) 2013-12-26 2018-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI637484B (zh) 2013-12-26 2018-10-01 日商半導體能源研究所股份有限公司 半導體裝置
SG11201604650SA (en) 2013-12-26 2016-07-28 Semiconductor Energy Lab Semiconductor device
JP6402017B2 (ja) 2013-12-26 2018-10-10 株式会社半導体エネルギー研究所 半導体装置
KR102791575B1 (ko) 2013-12-27 2025-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6506545B2 (ja) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 半導体装置
CN105849796B (zh) 2013-12-27 2020-02-07 株式会社半导体能源研究所 发光装置
US9397149B2 (en) 2013-12-27 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9577110B2 (en) 2013-12-27 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor and the display device including the semiconductor device
US9318618B2 (en) 2013-12-27 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9349418B2 (en) 2013-12-27 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
JP6506961B2 (ja) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 液晶表示装置
US9472678B2 (en) 2013-12-27 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6444723B2 (ja) 2014-01-09 2018-12-26 株式会社半導体エネルギー研究所 装置
US9300292B2 (en) 2014-01-10 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Circuit including transistor
US9401432B2 (en) 2014-01-16 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9379713B2 (en) 2014-01-17 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Data processing device and driving method thereof
KR102306200B1 (ko) 2014-01-24 2021-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2015114476A1 (en) 2014-01-28 2015-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9929044B2 (en) 2014-01-30 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI665778B (zh) 2014-02-05 2019-07-11 日商半導體能源研究所股份有限公司 半導體裝置、模組及電子裝置
US9443876B2 (en) 2014-02-05 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
US9929279B2 (en) 2014-02-05 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6523695B2 (ja) 2014-02-05 2019-06-05 株式会社半導体エネルギー研究所 半導体装置
JP6473626B2 (ja) 2014-02-06 2019-02-20 株式会社半導体エネルギー研究所 半導体装置
WO2015118436A1 (en) 2014-02-07 2015-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, device, and electronic device
JP6420165B2 (ja) 2014-02-07 2018-11-07 株式会社半導体エネルギー研究所 半導体装置
JP2015165226A (ja) 2014-02-07 2015-09-17 株式会社半導体エネルギー研究所 装置
TWI685116B (zh) 2014-02-07 2020-02-11 日商半導體能源研究所股份有限公司 半導體裝置
JP6534530B2 (ja) 2014-02-07 2019-06-26 株式会社半導体エネルギー研究所 半導体装置
JP6545970B2 (ja) 2014-02-07 2019-07-17 株式会社半導体エネルギー研究所 装置
DE112015000739T5 (de) 2014-02-11 2016-12-29 Semiconductor Energy Laboratory Co., Ltd. Anzeigevorrichtung und elektronisches Gerät
WO2015125042A1 (en) 2014-02-19 2015-08-27 Semiconductor Energy Laboratory Co., Ltd. Oxide, semiconductor device, module, and electronic device
JP6629509B2 (ja) 2014-02-21 2020-01-15 株式会社半導体エネルギー研究所 酸化物半導体膜
JP2015172991A (ja) 2014-02-21 2015-10-01 株式会社半導体エネルギー研究所 半導体装置、電子部品、及び電子機器
JP6506566B2 (ja) 2014-02-21 2019-04-24 株式会社半導体エネルギー研究所 電流測定方法
DE112015001024T5 (de) 2014-02-28 2016-12-22 Semiconductor Energy Laboratory Co., Ltd. Eine Halbleitervorrichtung, eine Anzeigevorrichtung, die die Halbleitervorrichtung umfasst, ein Anzeigemodul, das die Anzeigevorrichtung umfasst und ein elektronisches Gerät, das die Halbleitervorrichtung, die Anzeigevorrichtung oder das Anzeigemodul umfasst
US9564535B2 (en) 2014-02-28 2017-02-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module
US10074576B2 (en) 2014-02-28 2018-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US9294096B2 (en) 2014-02-28 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6542542B2 (ja) 2014-02-28 2019-07-10 株式会社半導体エネルギー研究所 半導体装置
KR20150104518A (ko) 2014-03-05 2015-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레벨 시프터 회로
JP6474280B2 (ja) 2014-03-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
JP6625328B2 (ja) 2014-03-06 2019-12-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
US9397637B2 (en) 2014-03-06 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Voltage controlled oscillator, semiconductor device, and electronic device
US10096489B2 (en) 2014-03-06 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9537478B2 (en) 2014-03-06 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6585354B2 (ja) 2014-03-07 2019-10-02 株式会社半導体エネルギー研究所 半導体装置
US9711536B2 (en) 2014-03-07 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
JP6545976B2 (ja) 2014-03-07 2019-07-17 株式会社半導体エネルギー研究所 半導体装置
WO2015132697A1 (en) 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102267237B1 (ko) 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
JP6442321B2 (ja) 2014-03-07 2018-12-19 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法、並びに電子機器
US9419622B2 (en) 2014-03-07 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015132694A1 (en) 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Touch sensor, touch panel, and manufacturing method of touch panel
JP6607681B2 (ja) 2014-03-07 2019-11-20 株式会社半導体エネルギー研究所 半導体装置
KR20160132405A (ko) 2014-03-12 2016-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6541376B2 (ja) 2014-03-13 2019-07-10 株式会社半導体エネルギー研究所 プログラマブルロジックデバイスの動作方法
TWI660490B (zh) 2014-03-13 2019-05-21 Semiconductor Energy Laboratory Co., Ltd. 攝像裝置
US9640669B2 (en) 2014-03-13 2017-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module
JP6525421B2 (ja) 2014-03-13 2019-06-05 株式会社半導体エネルギー研究所 半導体装置
JP6560508B2 (ja) 2014-03-13 2019-08-14 株式会社半導体エネルギー研究所 半導体装置
US9324747B2 (en) 2014-03-13 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Imaging device
JP6677449B2 (ja) 2014-03-13 2020-04-08 株式会社半導体エネルギー研究所 半導体装置の駆動方法
US9887212B2 (en) 2014-03-14 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9299848B2 (en) 2014-03-14 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, RF tag, and electronic device
JP2015188071A (ja) 2014-03-14 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
KR102414469B1 (ko) 2014-03-14 2022-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 회로 시스템
JP6559444B2 (ja) 2014-03-14 2019-08-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6509596B2 (ja) 2014-03-18 2019-05-08 株式会社半導体エネルギー研究所 半導体装置
WO2015140656A1 (en) 2014-03-18 2015-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9842842B2 (en) 2014-03-19 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device and electronic device having the same
US9887291B2 (en) 2014-03-19 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, or the display module
KR102398965B1 (ko) 2014-03-20 2022-05-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
TWI657488B (zh) 2014-03-20 2019-04-21 日商半導體能源研究所股份有限公司 半導體裝置、具有該半導體裝置的顯示裝置、具有該顯示裝置的顯示模組以及具有該半導體裝置、該顯示裝置和該顯示模組的電子裝置
CN106165106B (zh) 2014-03-28 2020-09-15 株式会社半导体能源研究所 晶体管以及半导体装置
JP6487738B2 (ja) 2014-03-31 2019-03-20 株式会社半導体エネルギー研究所 半導体装置、電子部品
TWI695375B (zh) 2014-04-10 2020-06-01 日商半導體能源研究所股份有限公司 記憶體裝置及半導體裝置
JP6635670B2 (ja) 2014-04-11 2020-01-29 株式会社半導体エネルギー研究所 半導体装置
US9674470B2 (en) 2014-04-11 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and method for driving electronic device
JP6541398B2 (ja) 2014-04-11 2019-07-10 株式会社半導体エネルギー研究所 半導体装置
TWI646782B (zh) 2014-04-11 2019-01-01 Semiconductor Energy Laboratory Co., Ltd. 保持電路、保持電路的驅動方法以及包括保持電路的半導體裝置
WO2015159183A2 (en) 2014-04-18 2015-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device having the same
KR102511325B1 (ko) 2014-04-18 2023-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 동작 방법
WO2015159179A1 (en) 2014-04-18 2015-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP6613044B2 (ja) 2014-04-22 2019-11-27 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
KR102380829B1 (ko) 2014-04-23 2022-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
KR102330412B1 (ko) 2014-04-25 2021-11-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
TWI643457B (zh) 2014-04-25 2018-12-01 日商半導體能源研究所股份有限公司 半導體裝置
US9780226B2 (en) 2014-04-25 2017-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6468686B2 (ja) 2014-04-25 2019-02-13 株式会社半導体エネルギー研究所 入出力装置
US10043913B2 (en) 2014-04-30 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor device, display device, module, and electronic device
US10656799B2 (en) 2014-05-02 2020-05-19 Semiconductor Energy Laboratory Co., Ltd. Display device and operation method thereof
TWI679624B (zh) 2014-05-02 2019-12-11 日商半導體能源研究所股份有限公司 半導體裝置
JP6537341B2 (ja) 2014-05-07 2019-07-03 株式会社半導体エネルギー研究所 半導体装置
JP6722980B2 (ja) 2014-05-09 2020-07-15 株式会社半導体エネルギー研究所 表示装置および発光装置、並びに電子機器
JP6653997B2 (ja) 2014-05-09 2020-02-26 株式会社半導体エネルギー研究所 表示補正回路及び表示装置
KR102333604B1 (ko) 2014-05-15 2021-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이 반도체 장치를 포함하는 표시 장치
JP6612056B2 (ja) 2014-05-16 2019-11-27 株式会社半導体エネルギー研究所 撮像装置、及び監視装置
JP2015233130A (ja) 2014-05-16 2015-12-24 株式会社半導体エネルギー研究所 半導体基板および半導体装置の作製方法
JP6580863B2 (ja) 2014-05-22 2019-09-25 株式会社半導体エネルギー研究所 半導体装置、健康管理システム
TWI672804B (zh) 2014-05-23 2019-09-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置的製造方法
JP6616102B2 (ja) 2014-05-23 2019-12-04 株式会社半導体エネルギー研究所 記憶装置及び電子機器
US10020403B2 (en) 2014-05-27 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015181679A1 (en) * 2014-05-27 2015-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9874775B2 (en) 2014-05-28 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
KR20150138026A (ko) 2014-05-29 2015-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6653129B2 (ja) 2014-05-29 2020-02-26 株式会社半導体エネルギー研究所 記憶装置
KR102418666B1 (ko) 2014-05-29 2022-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 소자, 전자 기기, 촬상 소자의 구동 방법, 및 전자 기기의 구동 방법
JP6525722B2 (ja) 2014-05-29 2019-06-05 株式会社半導体エネルギー研究所 記憶装置、電子部品、及び電子機器
JP6615490B2 (ja) 2014-05-29 2019-12-04 株式会社半導体エネルギー研究所 半導体装置及び電子機器
JP6538426B2 (ja) 2014-05-30 2019-07-03 株式会社半導体エネルギー研究所 半導体装置及び電子機器
TWI663726B (zh) 2014-05-30 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置、模組及電子裝置
KR102259172B1 (ko) 2014-05-30 2021-06-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이의 제조 방법, 및 전자 장치
US9831238B2 (en) 2014-05-30 2017-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including insulating film having opening portion and conductive film in the opening portion
JP6537892B2 (ja) 2014-05-30 2019-07-03 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
TWI646658B (zh) 2014-05-30 2019-01-01 日商半導體能源研究所股份有限公司 半導體裝置
WO2015181997A1 (en) 2014-05-30 2015-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102344782B1 (ko) 2014-06-13 2021-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 입력 장치 및 입출력 장치
JP2016015475A (ja) 2014-06-13 2016-01-28 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
WO2015189731A1 (en) 2014-06-13 2015-12-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the semiconductor device
TWI663733B (zh) 2014-06-18 2019-06-21 日商半導體能源研究所股份有限公司 電晶體及半導體裝置
KR20150146409A (ko) 2014-06-20 2015-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치, 입출력 장치, 및 전자 기기
TWI666776B (zh) 2014-06-20 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置以及包括該半導體裝置的顯示裝置
US9722090B2 (en) 2014-06-23 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including first gate oxide semiconductor film, and second gate
JP6545541B2 (ja) 2014-06-25 2019-07-17 株式会社半導体エネルギー研究所 撮像装置、監視装置、及び電子機器
US10002971B2 (en) 2014-07-03 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
US9647129B2 (en) 2014-07-04 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9461179B2 (en) 2014-07-11 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor device (TFT) comprising stacked oxide semiconductor layers and having a surrounded channel structure
WO2016009310A1 (en) 2014-07-15 2016-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device including the semiconductor device
KR102422059B1 (ko) 2014-07-18 2022-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 촬상 장치, 및 전자 기기
JP6581825B2 (ja) 2014-07-18 2019-09-25 株式会社半導体エネルギー研究所 表示システム
KR102352633B1 (ko) 2014-07-25 2022-01-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발진 회로 및 그것을 포함하는 반도체 장치
US9312280B2 (en) 2014-07-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6527416B2 (ja) 2014-07-29 2019-06-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6555956B2 (ja) 2014-07-31 2019-08-07 株式会社半導体エネルギー研究所 撮像装置、監視装置、及び電子機器
CN106537486B (zh) 2014-07-31 2020-09-15 株式会社半导体能源研究所 显示装置及电子装置
US9705004B2 (en) 2014-08-01 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9595955B2 (en) 2014-08-08 2017-03-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including power storage elements and switches
JP6553444B2 (ja) 2014-08-08 2019-07-31 株式会社半導体エネルギー研究所 半導体装置
JP6652342B2 (ja) 2014-08-08 2020-02-19 株式会社半導体エネルギー研究所 半導体装置
US10147747B2 (en) 2014-08-21 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
US10032888B2 (en) 2014-08-22 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and electronic appliance having semiconductor device
US10559667B2 (en) 2014-08-25 2020-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for measuring current of semiconductor device
WO2016030801A1 (en) 2014-08-29 2016-03-03 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
KR102441803B1 (ko) 2014-09-02 2022-09-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 전자 기기
KR102329498B1 (ko) 2014-09-04 2021-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2016066065A (ja) 2014-09-05 2016-04-28 株式会社半導体エネルギー研究所 表示装置、および電子機器
US9766517B2 (en) 2014-09-05 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Display device and display module
JP6676316B2 (ja) 2014-09-12 2020-04-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9722091B2 (en) 2014-09-12 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2016066788A (ja) 2014-09-19 2016-04-28 株式会社半導体エネルギー研究所 半導体膜の評価方法および半導体装置の作製方法
KR102513878B1 (ko) 2014-09-19 2023-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR20160034200A (ko) 2014-09-19 2016-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9401364B2 (en) 2014-09-19 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US10071904B2 (en) 2014-09-25 2018-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
JP6633330B2 (ja) 2014-09-26 2020-01-22 株式会社半導体エネルギー研究所 半導体装置
WO2016046685A1 (en) 2014-09-26 2016-03-31 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US10170055B2 (en) 2014-09-26 2019-01-01 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
JP2016111677A (ja) 2014-09-26 2016-06-20 株式会社半導体エネルギー研究所 半導体装置、無線センサ、及び電子機器
US9450581B2 (en) 2014-09-30 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, semiconductor device, electronic component, and electronic device
KR20170068511A (ko) 2014-10-06 2017-06-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US9698170B2 (en) 2014-10-07 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
KR20170069207A (ko) 2014-10-10 2017-06-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 회로 기판, 및 전자 기기
KR102341741B1 (ko) 2014-10-10 2021-12-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로, 처리 유닛, 전자 부품, 및 전자 기기
US9991393B2 (en) 2014-10-16 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, module, and electronic device
JP6645793B2 (ja) 2014-10-17 2020-02-14 株式会社半導体エネルギー研究所 半導体装置
WO2016063159A1 (en) 2014-10-20 2016-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof, module, and electronic device
US10068927B2 (en) 2014-10-23 2018-09-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
JP6615565B2 (ja) 2014-10-24 2019-12-04 株式会社半導体エネルギー研究所 半導体装置
TWI652362B (zh) 2014-10-28 2019-03-01 日商半導體能源研究所股份有限公司 氧化物及其製造方法
WO2016067144A1 (en) 2014-10-28 2016-05-06 Semiconductor Energy Laboratory Co., Ltd. Display device, manufacturing method of display device, and electronic device
US9704704B2 (en) 2014-10-28 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
US9793905B2 (en) 2014-10-31 2017-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10680017B2 (en) 2014-11-07 2020-06-09 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element including EL layer, electrode which has high reflectance and a high work function, display device, electronic device, and lighting device
US9584707B2 (en) 2014-11-10 2017-02-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US9548327B2 (en) 2014-11-10 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Imaging device having a selenium containing photoelectric conversion layer
TWI691088B (zh) 2014-11-21 2020-04-11 日商半導體能源研究所股份有限公司 半導體裝置
JP6563313B2 (ja) 2014-11-21 2019-08-21 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US9438234B2 (en) 2014-11-21 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device including logic circuit
TWI711165B (zh) 2014-11-21 2020-11-21 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
KR20210039507A (ko) 2014-11-28 2021-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 모듈, 및 전자 기기
JP6647841B2 (ja) 2014-12-01 2020-02-14 株式会社半導体エネルギー研究所 酸化物の作製方法
US20160155849A1 (en) 2014-12-02 2016-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, module, and electronic device
JP6667267B2 (ja) 2014-12-08 2020-03-18 株式会社半導体エネルギー研究所 半導体装置
US9768317B2 (en) 2014-12-08 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method of semiconductor device, and electronic device
US9773832B2 (en) 2014-12-10 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP6833315B2 (ja) 2014-12-10 2021-02-24 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
JP6689062B2 (ja) 2014-12-10 2020-04-28 株式会社半導体エネルギー研究所 半導体装置
WO2016092427A1 (en) 2014-12-10 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2016092416A1 (en) 2014-12-11 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and electronic device
JP2016116220A (ja) 2014-12-16 2016-06-23 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
JP6676354B2 (ja) 2014-12-16 2020-04-08 株式会社半導体エネルギー研究所 半導体装置
TWI791952B (zh) 2014-12-18 2023-02-11 日商半導體能源研究所股份有限公司 半導體裝置、感測裝置和電子裝置
US10396210B2 (en) 2014-12-26 2019-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with stacked metal oxide and oxide semiconductor layers and display device including the semiconductor device
KR20170101233A (ko) 2014-12-26 2017-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링용 타깃의 제작 방법
TWI686874B (zh) 2014-12-26 2020-03-01 日商半導體能源研究所股份有限公司 半導體裝置、顯示裝置、顯示模組、電子裝置、氧化物及氧化物的製造方法
WO2016108122A1 (en) 2014-12-29 2016-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device having semiconductor device
US10522693B2 (en) 2015-01-16 2019-12-31 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
US9812587B2 (en) 2015-01-26 2017-11-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9443564B2 (en) 2015-01-26 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US9954112B2 (en) 2015-01-26 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9647132B2 (en) 2015-01-30 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
TWI792065B (zh) 2015-01-30 2023-02-11 日商半導體能源研究所股份有限公司 成像裝置及電子裝置
KR20170109231A (ko) 2015-02-02 2017-09-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 및 그 제작 방법
WO2016125051A1 (en) 2015-02-04 2016-08-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI683365B (zh) 2015-02-06 2020-01-21 日商半導體能源研究所股份有限公司 裝置及其製造方法以及電子裝置
US9660100B2 (en) 2015-02-06 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9954113B2 (en) 2015-02-09 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Transistor including oxide semiconductor, semiconductor device including the transistor, and electronic device including the transistor
JP6717604B2 (ja) 2015-02-09 2020-07-01 株式会社半導体エネルギー研究所 半導体装置、中央処理装置及び電子機器
TWI685113B (zh) 2015-02-11 2020-02-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9818880B2 (en) 2015-02-12 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP2016154225A (ja) 2015-02-12 2016-08-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
KR102585396B1 (ko) 2015-02-12 2023-10-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
US10249644B2 (en) 2015-02-13 2019-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US9489988B2 (en) 2015-02-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Memory device
US10403646B2 (en) 2015-02-20 2019-09-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9991394B2 (en) 2015-02-20 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US9722092B2 (en) 2015-02-25 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a stacked metal oxide
JP6739185B2 (ja) 2015-02-26 2020-08-12 株式会社半導体エネルギー研究所 ストレージシステム、およびストレージ制御回路
US9653613B2 (en) 2015-02-27 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6744108B2 (ja) 2015-03-02 2020-08-19 株式会社半導体エネルギー研究所 トランジスタ、トランジスタの作製方法、半導体装置および電子機器
CN107406966B (zh) 2015-03-03 2020-11-20 株式会社半导体能源研究所 氧化物半导体膜、包括该氧化物半导体膜的半导体装置以及包括该半导体装置的显示装置
CN113223967B (zh) 2015-03-03 2026-04-07 株式会社半导体能源研究所 半导体装置、该半导体装置的制造方法或包括该半导体装置的显示装置
TWI718125B (zh) 2015-03-03 2021-02-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP6681117B2 (ja) 2015-03-13 2020-04-15 株式会社半導体エネルギー研究所 半導体装置
US10008609B2 (en) 2015-03-17 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, or display device including the same
CN114546158A (zh) 2015-03-17 2022-05-27 株式会社半导体能源研究所 触摸屏
US9882061B2 (en) 2015-03-17 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9964799B2 (en) 2015-03-17 2018-05-08 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, and electronic device
JP2016177280A (ja) 2015-03-18 2016-10-06 株式会社半導体エネルギー研究所 表示装置および電子機器、並びに表示装置の駆動方法
JP6662665B2 (ja) 2015-03-19 2020-03-11 株式会社半導体エネルギー研究所 液晶表示装置及び該液晶表示装置を用いた電子機器
US10147823B2 (en) 2015-03-19 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102582523B1 (ko) 2015-03-19 2023-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
JP6688116B2 (ja) 2015-03-24 2020-04-28 株式会社半導体エネルギー研究所 撮像装置および電子機器
KR20160114511A (ko) 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9842938B2 (en) 2015-03-24 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including semiconductor device
US10429704B2 (en) 2015-03-26 2019-10-01 Semiconductor Energy Laboratory Co., Ltd. Display device, display module including the display device, and electronic device including the display device or the display module
US10096715B2 (en) 2015-03-26 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and electronic device
JP6736321B2 (ja) 2015-03-27 2020-08-05 株式会社半導体エネルギー研究所 半導体装置の製造方法
TWI695513B (zh) 2015-03-27 2020-06-01 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
US9806200B2 (en) 2015-03-27 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI777164B (zh) 2015-03-30 2022-09-11 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
US9716852B2 (en) 2015-04-03 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Broadcast system
US10389961B2 (en) 2015-04-09 2019-08-20 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
KR102663128B1 (ko) 2015-04-13 2024-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10372274B2 (en) 2015-04-13 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and touch panel
US10460984B2 (en) 2015-04-15 2019-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating electrode and semiconductor device
US10056497B2 (en) 2015-04-15 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2016206659A (ja) 2015-04-16 2016-12-08 株式会社半導体エネルギー研究所 表示装置および電子機器、並びに表示装置の駆動方法
US10192995B2 (en) 2015-04-28 2019-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10002970B2 (en) 2015-04-30 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method of the same, or display device including the same
US10671204B2 (en) 2015-05-04 2020-06-02 Semiconductor Energy Laboratory Co., Ltd. Touch panel and data processor
KR102549926B1 (ko) 2015-05-04 2023-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 반도체 장치의 제작 방법, 및 전자기기
JP6681780B2 (ja) 2015-05-07 2020-04-15 株式会社半導体エネルギー研究所 表示システムおよび電子機器
TWI693719B (zh) 2015-05-11 2020-05-11 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
DE102016207737A1 (de) 2015-05-11 2016-11-17 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung, Verfahren zum Herstellen der Halbleitervorrichtung, Reifen und beweglicher Gegenstand
JP6935171B2 (ja) 2015-05-14 2021-09-15 株式会社半導体エネルギー研究所 半導体装置
US11728356B2 (en) 2015-05-14 2023-08-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion element and imaging device
US9627034B2 (en) 2015-05-15 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Electronic device
KR102865103B1 (ko) 2015-05-22 2025-09-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치
US9837547B2 (en) 2015-05-22 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide conductor and display device including the semiconductor device
JP6773453B2 (ja) 2015-05-26 2020-10-21 株式会社半導体エネルギー研究所 記憶装置及び電子機器
JP2016225614A (ja) 2015-05-26 2016-12-28 株式会社半導体エネルギー研究所 半導体装置
US10139663B2 (en) 2015-05-29 2018-11-27 Semiconductor Energy Laboratory Co., Ltd. Input/output device and electronic device
KR102553553B1 (ko) 2015-06-12 2023-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치, 및 그 동작 방법 및 전자 기기
KR102593883B1 (ko) 2015-06-19 2023-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 그 제작 방법, 및 전자 기기
US9860465B2 (en) 2015-06-23 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US9935633B2 (en) 2015-06-30 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, semiconductor device, electronic component, and electronic device
US10290573B2 (en) 2015-07-02 2019-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9917209B2 (en) 2015-07-03 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including step of forming trench over semiconductor
US10181531B2 (en) 2015-07-08 2019-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor having low parasitic capacitance
JP2017022377A (ja) 2015-07-14 2017-01-26 株式会社半導体エネルギー研究所 半導体装置
US10501003B2 (en) 2015-07-17 2019-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, lighting device, and vehicle
US10985278B2 (en) 2015-07-21 2021-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US11189736B2 (en) 2015-07-24 2021-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US11024725B2 (en) 2015-07-24 2021-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including metal oxide film
US10978489B2 (en) 2015-07-24 2021-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display panel, method for manufacturing semiconductor device, method for manufacturing display panel, and information processing device
US10424671B2 (en) 2015-07-29 2019-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
US10585506B2 (en) 2015-07-30 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Display device with high visibility regardless of illuminance of external light
CN106409919A (zh) 2015-07-30 2017-02-15 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
JP6802656B2 (ja) 2015-07-30 2020-12-16 株式会社半導体エネルギー研究所 メモリセルの作製方法及び半導体装置の作製方法
US9825177B2 (en) 2015-07-30 2017-11-21 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a semiconductor device using multiple etching mask
US9876946B2 (en) 2015-08-03 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
JP6725357B2 (ja) 2015-08-03 2020-07-15 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法
JP6791661B2 (ja) 2015-08-07 2020-11-25 株式会社半導体エネルギー研究所 表示パネル
US9893202B2 (en) 2015-08-19 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP2017041877A (ja) 2015-08-21 2017-02-23 株式会社半導体エネルギー研究所 半導体装置、電子部品、および電子機器
US9666606B2 (en) 2015-08-21 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9773919B2 (en) 2015-08-26 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2017037564A1 (en) 2015-08-28 2017-03-09 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor, transistor, and semiconductor device
US9911756B2 (en) 2015-08-31 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor and electronic device surrounded by layer having assigned band gap to prevent electrostatic discharge damage
JP2017050537A (ja) 2015-08-31 2017-03-09 株式会社半導体エネルギー研究所 半導体装置
JP6807683B2 (ja) 2015-09-11 2021-01-06 株式会社半導体エネルギー研究所 入出力パネル
SG10201607278TA (en) 2015-09-18 2017-04-27 Semiconductor Energy Lab Co Ltd Semiconductor device and electronic device
JP2017063420A (ja) 2015-09-25 2017-03-30 株式会社半導体エネルギー研究所 半導体装置
US9935143B2 (en) 2015-09-30 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2017064590A1 (en) 2015-10-12 2017-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2017064587A1 (en) 2015-10-12 2017-04-20 Semiconductor Energy Laboratory Co., Ltd. Display panel, input/output device, data processor, and method for manufacturing display panel
US9852926B2 (en) 2015-10-20 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device
CN107077639A (zh) 2015-10-23 2017-08-18 株式会社半导体能源研究所 半导体装置及电子设备
JP2017102904A (ja) 2015-10-23 2017-06-08 株式会社半導体エネルギー研究所 半導体装置および電子機器
US10007161B2 (en) 2015-10-26 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Display device
SG10201608814YA (en) 2015-10-29 2017-05-30 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the semiconductor device
US9773787B2 (en) 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
US9741400B2 (en) 2015-11-05 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, and method for operating the semiconductor device
JP6796461B2 (ja) 2015-11-18 2020-12-09 株式会社半導体エネルギー研究所 半導体装置、コンピュータ及び電子機器
JP2018032839A (ja) 2015-12-11 2018-03-01 株式会社半導体エネルギー研究所 トランジスタ、回路、半導体装置、表示装置および電子機器
JP6887243B2 (ja) 2015-12-11 2021-06-16 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、電子機器及び半導ウエハ
US10050152B2 (en) 2015-12-16 2018-08-14 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
WO2017103731A1 (en) 2015-12-18 2017-06-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
US10177142B2 (en) 2015-12-25 2019-01-08 Semiconductor Energy Laboratory Co., Ltd. Circuit, logic circuit, processor, electronic component, and electronic device
KR102799414B1 (ko) 2015-12-28 2025-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치를 포함하는 표시 장치
JP2017135698A (ja) 2015-12-29 2017-08-03 株式会社半導体エネルギー研究所 半導体装置、コンピュータ及び電子機器
JP6851814B2 (ja) 2015-12-29 2021-03-31 株式会社半導体エネルギー研究所 トランジスタ
CN113105213A (zh) 2015-12-29 2021-07-13 株式会社半导体能源研究所 金属氧化物膜以及半导体装置
US10580798B2 (en) 2016-01-15 2020-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN113224171A (zh) 2016-01-18 2021-08-06 株式会社半导体能源研究所 金属氧化物膜、半导体装置以及显示装置
JP6839986B2 (ja) 2016-01-20 2021-03-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6822853B2 (ja) 2016-01-21 2021-01-27 株式会社半導体エネルギー研究所 記憶装置及び記憶装置の駆動方法
US10411013B2 (en) 2016-01-22 2019-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
US10700212B2 (en) 2016-01-28 2020-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof
US10115741B2 (en) 2016-02-05 2018-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10250247B2 (en) 2016-02-10 2019-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
CN114284364B (zh) 2016-02-12 2026-03-31 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
JP6970511B2 (ja) 2016-02-12 2021-11-24 株式会社半導体エネルギー研究所 トランジスタ
US9954003B2 (en) 2016-02-17 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2017149413A1 (en) 2016-03-04 2017-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2017149428A1 (en) 2016-03-04 2017-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device including the semiconductor device
US10263114B2 (en) 2016-03-04 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, or display device including the same
JP6904730B2 (ja) 2016-03-08 2021-07-21 株式会社半導体エネルギー研究所 撮像装置
US9882064B2 (en) 2016-03-10 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Transistor and electronic device
US10096720B2 (en) 2016-03-25 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
WO2017168283A1 (ja) 2016-04-01 2017-10-05 株式会社半導体エネルギー研究所 複合酸化物半導体、当該複合酸化物半導体を用いた半導体装置、当該半導体装置を有する表示装置
KR102295315B1 (ko) 2016-04-15 2021-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
US10236875B2 (en) 2016-04-15 2019-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for operating the semiconductor device
WO2017199130A1 (en) 2016-05-19 2017-11-23 Semiconductor Energy Laboratory Co., Ltd. Composite oxide semiconductor and transistor
WO2017208119A1 (en) 2016-06-03 2017-12-07 Semiconductor Energy Laboratory Co., Ltd. Metal oxide and field-effect transistor
KR102330605B1 (ko) 2016-06-22 2021-11-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10411003B2 (en) 2016-10-14 2019-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN114115609B (zh) 2016-11-25 2024-09-03 株式会社半导体能源研究所 显示装置及其工作方法
US11545581B2 (en) * 2019-08-02 2023-01-03 South China University Of Technology Metal oxide (MO) semiconductor and thin-film transistor and application thereof
US12520538B2 (en) * 2017-04-10 2026-01-06 South China University Of Technology Rare-earth doped semiconductor material, thin-film transistor, and application
WO2019025893A1 (ja) 2017-07-31 2019-02-07 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP6782211B2 (ja) * 2017-09-08 2020-11-11 株式会社東芝 透明電極、それを用いた素子、および素子の製造方法
US10808314B2 (en) * 2017-09-28 2020-10-20 Sharp Kabushiki Kaisha Vapor deposition mask and method for manufacturing vapor deposition mask
CN112041776B (zh) 2018-01-24 2022-06-07 株式会社半导体能源研究所 半导体装置、电子构件及电子设备
JP7293190B2 (ja) 2018-03-16 2023-06-19 株式会社半導体エネルギー研究所 半導体装置
JPWO2020012276A1 (ja) 2018-07-09 2021-08-12 株式会社半導体エネルギー研究所 半導体装置
US11990778B2 (en) 2018-07-10 2024-05-21 Semiconductor Energy Laboratory Co., Ltd. Secondary battery protection circuit and secondary battery anomaly detection system
CN108766269B (zh) * 2018-07-27 2024-07-30 广州市建研零碳新材料科技有限公司 透明显示基板、透明显示屏及其制作方法
CN208848908U (zh) * 2018-09-13 2019-05-10 惠科股份有限公司 一种阵列基板及显示面板
US12237389B2 (en) 2018-11-02 2025-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102905476B1 (ko) 2018-11-22 2025-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전지 팩
JP7526671B2 (ja) 2018-12-20 2024-08-01 株式会社半導体エネルギー研究所 半導体装置および電池パック
EP3877804A1 (en) * 2019-02-05 2021-09-15 Facebook Technologies, LLC. Process flow for hybrid tft-based micro display projector
WO2020217130A1 (ja) 2019-04-26 2020-10-29 株式会社半導体エネルギー研究所 半導体装置および電子機器
WO2020229911A1 (ja) 2019-05-10 2020-11-19 株式会社半導体エネルギー研究所 表示装置および電子機器
GB2587793B (en) 2019-08-21 2023-03-22 Pragmatic Printing Ltd Electronic circuit comprising transistor and resistor
GB2610886B (en) 2019-08-21 2023-09-13 Pragmatic Printing Ltd Resistor geometry
WO2024040442A1 (zh) 2022-08-23 2024-02-29 京东方科技集团股份有限公司 移位寄存器及其驱动方法、显示基板、显示装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL282170A (enExample) 1961-08-17
US5625199A (en) 1996-01-16 1997-04-29 Lucent Technologies Inc. Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
US6316278B1 (en) * 1999-03-16 2001-11-13 Alien Technology Corporation Methods for fabricating a multiple modular assembly
JP2003050405A (ja) * 2000-11-15 2003-02-21 Matsushita Electric Ind Co Ltd 薄膜トランジスタアレイ、その製造方法およびそれを用いた表示パネル
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP2003037268A (ja) * 2001-07-24 2003-02-07 Minolta Co Ltd 半導体素子及びその製造方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
US6844673B1 (en) * 2001-12-06 2005-01-18 Alien Technology Corporation Split-fabrication for light emitting display structures
US6897164B2 (en) 2002-02-14 2005-05-24 3M Innovative Properties Company Aperture masks for circuit fabrication
US6821348B2 (en) 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
US7189992B2 (en) 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
KR100432651B1 (ko) 2002-06-18 2004-05-22 삼성에스디아이 주식회사 화상 표시 장치
US20030234392A1 (en) * 2002-06-25 2003-12-25 Nein-Hui Kung Active matrix organic light emitting diode display pixel structure
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
US20040110326A1 (en) * 2002-11-20 2004-06-10 Charles Forbes Active matrix thin film transistor array backplane
US7250930B2 (en) * 2003-02-07 2007-07-31 Hewlett-Packard Development Company, L.P. Transparent active-matrix display

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