JP4861330B2 - 有機発光ダイオードを含むディスプレイおよびその作製方法 - Google Patents

有機発光ダイオードを含むディスプレイおよびその作製方法 Download PDF

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Publication number
JP4861330B2
JP4861330B2 JP2007538979A JP2007538979A JP4861330B2 JP 4861330 B2 JP4861330 B2 JP 4861330B2 JP 2007538979 A JP2007538979 A JP 2007538979A JP 2007538979 A JP2007538979 A JP 2007538979A JP 4861330 B2 JP4861330 B2 JP 4861330B2
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zno
thin film
pixel
row
substrate
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Japanese (ja)
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JP2008519292A (ja
JP2008519292A5 (enExample
Inventor
エフ． バウデ，ポール
ディー． タイス，スティーブン
エー． ハーセ，マイケル
ダブリュ． ヘメッシュ，エリック
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
JP2007538979A 2004-11-02 2005-10-17 有機発光ダイオードを含むディスプレイおよびその作製方法 Expired - Fee Related JP4861330B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/979,067 2004-11-02
US10/979,067 US7298084B2 (en) 2004-11-02 2004-11-02 Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
PCT/US2005/037349 WO2006049859A2 (en) 2004-11-02 2005-10-17 Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes

Publications (3)

Publication Number Publication Date
JP2008519292A JP2008519292A (ja) 2008-06-05
JP2008519292A5 JP2008519292A5 (enExample) 2008-12-04
JP4861330B2 true JP4861330B2 (ja) 2012-01-25

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JP2007538979A Expired - Fee Related JP4861330B2 (ja) 2004-11-02 2005-10-17 有機発光ダイオードを含むディスプレイおよびその作製方法

Country Status (8)

Country Link
US (1) US7298084B2 (enExample)
EP (1) EP1810336A2 (enExample)
JP (1) JP4861330B2 (enExample)
KR (1) KR20070074594A (enExample)
CN (1) CN101048871A (enExample)
CA (1) CA2584353A1 (enExample)
TW (1) TW200629615A (enExample)
WO (1) WO2006049859A2 (enExample)

Families Citing this family (1824)

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Publication number Priority date Publication date Assignee Title
TWI481024B (zh) 2005-01-28 2015-04-11 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI412138B (zh) * 2005-01-28 2013-10-11 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
JP4899327B2 (ja) * 2005-03-15 2012-03-21 カシオ計算機株式会社 シフトレジスタ回路及びその駆動制御方法並びに駆動制御装置
US7928938B2 (en) * 2005-04-19 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory circuit, display device and electronic apparatus
US20060289879A1 (en) * 2005-06-27 2006-12-28 Intel Corporation Dual-face display apparatus, systems, and methods
TWI429327B (zh) 2005-06-30 2014-03-01 Semiconductor Energy Lab 半導體裝置、顯示裝置、及電子設備
US8629819B2 (en) 2005-07-14 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
TWI424408B (zh) * 2005-08-12 2014-01-21 半導體能源研究所股份有限公司 半導體裝置，和安裝有該半導體裝置的顯示裝置和電子裝置
EP1758072A3 (en) * 2005-08-24 2007-05-02 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
WO2007034935A1 (en) 2005-09-21 2007-03-29 Semiconductor Energy Laboratory Co., Ltd. Cyclic redundancy check circuit and semiconductor device having the cyclic redundancy check circuit
EP3614442A3 (en) * 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
CN101278403B (zh) 2005-10-14 2010-12-01 株式会社半导体能源研究所 半导体器件及其制造方法
JP5037808B2 (ja) * 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
CN101667544B (zh) 2005-11-15 2012-09-05 株式会社半导体能源研究所 半导体器件及其制造方法
EP2924498A1 (en) 2006-04-06 2015-09-30 Semiconductor Energy Laboratory Co, Ltd. Liquid crystal desplay device, semiconductor device, and electronic appliance
KR100785038B1 (ko) * 2006-04-17 2007-12-12 삼성전자주식회사 비정질 ＺｎＯ계 ＴＦＴ
WO2007135795A1 (ja) * 2006-05-24 2007-11-29 Sharp Kabushiki Kaisha 表示装置の駆動回路およびデータ信号線駆動回路ならびに表示装置
JP4609797B2 (ja) * 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
EP1895545B1 (en) 2006-08-31 2014-04-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP5116277B2 (ja) * 2006-09-29 2013-01-09 株式会社半導体エネルギー研究所 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器
TWI442368B (zh) * 2006-10-26 2014-06-21 Semiconductor Energy Lab 電子裝置，顯示裝置，和半導體裝置，以及其驅動方法
US7646015B2 (en) * 2006-10-31 2010-01-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
KR101509663B1 (ko) 2007-02-16 2015-04-06 삼성전자주식회사 산화물 반도체층 형성 방법 및 이를 이용한 반도체 소자제조방법
US20080205010A1 (en) * 2007-02-26 2008-08-28 3M Innovative Properties Company Active matrix backplanes allowing relaxed alignment tolerance
US7629206B2 (en) * 2007-02-26 2009-12-08 3M Innovative Properties Company Patterning self-aligned transistors using back surface illumination
KR101334181B1 (ko) * 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
JP5408842B2 (ja) * 2007-04-27 2014-02-05 キヤノン株式会社 発光装置およびその製造方法
JP5542297B2 (ja) 2007-05-17 2014-07-09 株式会社半導体エネルギー研究所 液晶表示装置、表示モジュール及び電子機器
JP4989309B2 (ja) 2007-05-18 2012-08-01 株式会社半導体エネルギー研究所 液晶表示装置
US7935964B2 (en) * 2007-06-19 2011-05-03 Samsung Electronics Co., Ltd. Oxide semiconductors and thin film transistors comprising the same
WO2008156312A2 (en) 2007-06-19 2008-12-24 Samsung Electronics Co., Ltd. Oxide semiconductors and thin film transistors comprising the same
EP2183781B1 (en) * 2007-06-28 2012-10-24 3M Innovative Properties Company Method for forming gate structures
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
WO2009014155A1 (en) 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
NO332409B1 (no) * 2008-01-24 2012-09-17 Well Technology As Anordning og fremgangsmate for a isolere en seksjon av et bronnhull
KR101496148B1 (ko) * 2008-05-15 2015-02-27 삼성전자주식회사 반도체소자 및 그 제조방법
US9041202B2 (en) * 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
KR101468591B1 (ko) * 2008-05-29 2014-12-04 삼성전자주식회사 산화물 반도체 및 이를 포함하는 박막 트랜지스터
US8314765B2 (en) 2008-06-17 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device, and electronic device
KR102112799B1 (ko) 2008-07-10 2020-05-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 및 전자기기
US8822995B2 (en) * 2008-07-24 2014-09-02 Samsung Display Co., Ltd. Display substrate and method of manufacturing the same
JP2010056541A (ja) 2008-07-31 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TWI622175B (zh) 2008-07-31 2018-04-21 半導體能源研究所股份有限公司 半導體裝置
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TWI469354B (zh) 2008-07-31 2015-01-11 Semiconductor Energy Lab 半導體裝置及其製造方法
JP5525778B2 (ja) 2008-08-08 2014-06-18 株式会社半導体エネルギー研究所 半導体装置
TWI637444B (zh) 2008-08-08 2018-10-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
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TWI508282B (zh) 2008-08-08 2015-11-11 Semiconductor Energy Lab 半導體裝置及其製造方法
JP5627071B2 (ja) 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
TWI511299B (zh) 2008-09-01 2015-12-01 Semiconductor Energy Lab 半導體裝置的製造方法
KR101644406B1 (ko) 2008-09-12 2016-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101623224B1 (ko) * 2008-09-12 2016-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
WO2010029885A1 (en) * 2008-09-12 2010-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2010029866A1 (en) 2008-09-12 2010-03-18 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101889287B1 (ko) 2008-09-19 2018-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR101670695B1 (ko) 2008-09-19 2016-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
WO2010032638A1 (en) 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101622978B1 (ko) * 2008-09-19 2016-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
CN102881696A (zh) 2008-09-19 2013-01-16 株式会社半导体能源研究所 显示装置
WO2010038599A1 (en) * 2008-10-01 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101273972B1 (ko) 2008-10-03 2013-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR102133478B1 (ko) 2008-10-03 2020-07-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
EP2172977A1 (en) 2008-10-03 2010-04-07 Semiconductor Energy Laboratory Co., Ltd. Display device
CN101714546B (zh) 2008-10-03 2014-05-14 株式会社半导体能源研究所 显示装置及其制造方法
EP2172804B1 (en) 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
CN101719493B (zh) 2008-10-08 2014-05-14 株式会社半导体能源研究所 显示装置
JP5484853B2 (ja) * 2008-10-10 2014-05-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101799601B1 (ko) * 2008-10-16 2017-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 표시 장치
US8536796B2 (en) * 2008-10-21 2013-09-17 Koninklijke Philips N.V. Light emitting diode driving apparatus
JP5361651B2 (ja) 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5616012B2 (ja) 2008-10-24 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2010047288A1 (en) * 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
US8741702B2 (en) 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101259727B1 (ko) 2008-10-24 2013-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101667909B1 (ko) 2008-10-24 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
JP5442234B2 (ja) 2008-10-24 2014-03-12 株式会社半導体エネルギー研究所 半導体装置及び表示装置
US8106400B2 (en) 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
EP2180518B1 (en) 2008-10-24 2018-04-25 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
TWI567829B (zh) 2008-10-31 2017-01-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
WO2010050419A1 (en) * 2008-10-31 2010-05-06 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and display device
KR101631454B1 (ko) * 2008-10-31 2016-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리회로
KR101603303B1 (ko) 2008-10-31 2016-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 도전성 산질화물 및 도전성 산질화물막의 제작 방법
CN101740631B (zh) * 2008-11-07 2014-07-16 株式会社半导体能源研究所 半导体装置及该半导体装置的制造方法
TWI467663B (zh) 2008-11-07 2015-01-01 Semiconductor Energy Lab 半導體裝置和該半導體裝置的製造方法
WO2010053060A1 (en) * 2008-11-07 2010-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2184783B1 (en) * 2008-11-07 2012-10-03 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and method for manufacturing the same
TWI535037B (zh) 2008-11-07 2016-05-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI574423B (zh) 2008-11-07 2017-03-11 半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI656645B (zh) 2008-11-13 2019-04-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR101432764B1 (ko) * 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
US8232947B2 (en) 2008-11-14 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2010153802A (ja) 2008-11-20 2010-07-08 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
KR102556313B1 (ko) 2008-11-21 2023-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US8344387B2 (en) 2008-11-28 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI483038B (zh) 2008-11-28 2015-05-01 Semiconductor Energy Lab 液晶顯示裝置
TWI585955B (zh) * 2008-11-28 2017-06-01 半導體能源研究所股份有限公司 光感測器及顯示裝置
KR101643204B1 (ko) * 2008-12-01 2016-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
TWI613489B (zh) 2008-12-03 2018-02-01 半導體能源研究所股份有限公司 液晶顯示裝置
JP5491833B2 (ja) 2008-12-05 2014-05-14 株式会社半導体エネルギー研究所 半導体装置
JP5615540B2 (ja) * 2008-12-19 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN102257621B (zh) 2008-12-19 2013-08-21 株式会社半导体能源研究所 晶体管的制造方法
EP2515337B1 (en) 2008-12-24 2016-02-24 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
US8114720B2 (en) 2008-12-25 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8383470B2 (en) * 2008-12-25 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor (TFT) having a protective layer and manufacturing method thereof
KR101719350B1 (ko) * 2008-12-25 2017-03-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8441007B2 (en) 2008-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US8330156B2 (en) * 2008-12-26 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with a plurality of oxide clusters over the gate insulating layer
TWI501319B (zh) 2008-12-26 2015-09-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR101648927B1 (ko) 2009-01-16 2016-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8492756B2 (en) 2009-01-23 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8436350B2 (en) * 2009-01-30 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using an oxide semiconductor with a plurality of metal clusters
US8367486B2 (en) 2009-02-05 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
US8174021B2 (en) 2009-02-06 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
US8749930B2 (en) * 2009-02-09 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Protection circuit, semiconductor device, photoelectric conversion device, and electronic device
US8247812B2 (en) * 2009-02-13 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
CN101840936B (zh) 2009-02-13 2014-10-08 株式会社半导体能源研究所 包括晶体管的半导体装置及其制造方法
US8278657B2 (en) 2009-02-13 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
KR101097454B1 (ko) * 2009-02-16 2011-12-23 네오뷰코오롱 주식회사 Ｏｌｅｄ 패널의 화소 회로, 이를 이용한 표시 장치 및 ｏｌｅｄ 패널의 구동 방법
US8247276B2 (en) * 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US8841661B2 (en) * 2009-02-25 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
US8704216B2 (en) 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20100224878A1 (en) 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20100224880A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8461582B2 (en) 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5504008B2 (ja) 2009-03-06 2014-05-28 株式会社半導体エネルギー研究所 半導体装置
KR102195170B1 (ko) * 2009-03-12 2020-12-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI556323B (zh) * 2009-03-13 2016-11-01 半導體能源研究所股份有限公司 半導體裝置及該半導體裝置的製造方法
US8450144B2 (en) * 2009-03-26 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101752640B1 (ko) 2009-03-27 2017-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR101681884B1 (ko) 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치, 표시장치 및 전자기기
TWI617029B (zh) 2009-03-27 2018-03-01 半導體能源研究所股份有限公司 半導體裝置
US8927981B2 (en) * 2009-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI489628B (zh) * 2009-04-02 2015-06-21 Semiconductor Energy Lab 半導體裝置和其製造方法
US8338226B2 (en) * 2009-04-02 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5615018B2 (ja) 2009-04-10 2014-10-29 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
TWI535023B (zh) 2009-04-16 2016-05-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
CN102422426B (zh) * 2009-05-01 2016-06-01 株式会社半导体能源研究所 半导体装置的制造方法
JP5751762B2 (ja) 2009-05-21 2015-07-22 株式会社半導体エネルギー研究所 半導体装置
JP5564331B2 (ja) * 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2256795B1 (en) 2009-05-29 2014-11-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for oxide semiconductor device
EP2436233B1 (en) * 2009-05-29 2016-08-10 Semiconductor Energy Laboratory Co, Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
EP2256814B1 (en) * 2009-05-29 2019-01-16 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
KR101291395B1 (ko) 2009-06-30 2013-07-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
KR101457837B1 (ko) 2009-06-30 2014-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
KR102256492B1 (ko) 2009-06-30 2021-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
KR101645146B1 (ko) * 2009-06-30 2016-08-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
US20110000175A1 (en) * 2009-07-01 2011-01-06 Husqvarna Consumer Outdoor Products N.A. Inc. Variable speed controller
KR101610606B1 (ko) 2009-07-03 2016-04-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR101476817B1 (ko) 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터를 갖는 표시 장치 및 그 제작 방법
JP5663214B2 (ja) 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR20220100086A (ko) 2009-07-10 2022-07-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
CN104835850B (zh) * 2009-07-10 2018-10-26 株式会社半导体能源研究所 半导体器件
KR101460868B1 (ko) 2009-07-10 2014-11-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011007677A1 (en) 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011007682A1 (en) 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
WO2011007675A1 (en) * 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011010545A1 (en) 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102576732B (zh) 2009-07-18 2015-02-25 株式会社半导体能源研究所 半导体装置与用于制造半导体装置的方法
KR101768786B1 (ko) 2009-07-18 2017-08-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
WO2011010541A1 (en) * 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011010542A1 (en) 2009-07-23 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101904811B1 (ko) 2009-07-24 2018-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102097932B1 (ko) 2009-07-31 2020-04-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스 및 그 형성 방법
CN105097946B (zh) 2009-07-31 2018-05-08 株式会社半导体能源研究所 半导体装置及其制造方法
WO2011013502A1 (en) * 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN104992984B (zh) 2009-07-31 2019-08-16 株式会社半导体能源研究所 半导体装置、显示模块及电子装置
WO2011013523A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5642447B2 (ja) 2009-08-07 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
TWI528527B (zh) 2009-08-07 2016-04-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置之製造方法
TWI596741B (zh) 2009-08-07 2017-08-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI559501B (zh) 2009-08-07 2016-11-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI529914B (zh) 2009-08-07 2016-04-11 半導體能源研究所股份有限公司 半導體裝置和其製造方法
EP2284891B1 (en) 2009-08-07 2019-07-24 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
JP5663231B2 (ja) 2009-08-07 2015-02-04 株式会社半導体エネルギー研究所 発光装置
WO2011018110A1 (en) * 2009-08-12 2011-02-17 X-Fab Semiconductor Foundries Ag Method of manufacturing an organic light emitting diode by lift-off
US8115883B2 (en) 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
WO2011027649A1 (en) * 2009-09-02 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a transistor, and manufacturing method of semiconductor device
KR101672072B1 (ko) 2009-09-04 2016-11-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
CN102498570B (zh) 2009-09-04 2016-02-10 株式会社半导体能源研究所 发光装置及其制造方法
JP5700626B2 (ja) * 2009-09-04 2015-04-15 株式会社半導体エネルギー研究所 Ｅｌ表示装置
WO2011027702A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
WO2011027656A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
KR101269812B1 (ko) 2009-09-04 2013-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 패널, 표시 모듈, 전자 기기 및 표시 장치
WO2011027664A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
WO2011027701A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
KR101746198B1 (ko) 2009-09-04 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 전자기기
WO2011027676A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9715845B2 (en) 2009-09-16 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
WO2011033993A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN105428424A (zh) 2009-09-16 2016-03-23 株式会社半导体能源研究所 晶体管及显示设备
KR102009813B1 (ko) 2009-09-16 2019-08-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
WO2011034012A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, light emitting device, semiconductor device, and electronic device
KR20230165355A (ko) 2009-09-16 2023-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101709749B1 (ko) 2009-09-16 2017-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법 및 표시 장치
KR101700470B1 (ko) * 2009-09-16 2017-01-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 구동 회로를 포함하는 표시 장치 및 표시 장치를 포함하는 전자 기기
KR101707260B1 (ko) 2009-09-24 2017-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102054650B1 (ko) 2009-09-24 2019-12-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
TWI512997B (zh) 2009-09-24 2015-12-11 Semiconductor Energy Lab 半導體裝置，電源電路，和半導體裝置的製造方法
KR101342179B1 (ko) 2009-09-24 2013-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자 및 그 제조 방법
WO2011037008A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
KR20120071393A (ko) 2009-09-24 2012-07-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011036987A1 (en) * 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101890096B1 (ko) 2009-09-24 2018-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 상기 구동 회로를 포함하는 표시 장치, 및 상기 표시 장치를 포함하는 전자 기기
KR20180031077A (ko) 2009-09-24 2018-03-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
JP5613508B2 (ja) * 2009-09-30 2014-10-22 株式会社半導体エネルギー研究所 レドックスキャパシタ
KR101767035B1 (ko) * 2009-10-01 2017-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR20120084751A (ko) 2009-10-05 2012-07-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011043182A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for removing electricity and method for manufacturing semiconductor device
KR101877149B1 (ko) 2009-10-08 2018-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체층, 반도체 장치 및 그 제조 방법
KR101969253B1 (ko) * 2009-10-08 2019-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011043218A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20120093864A (ko) 2009-10-09 2012-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101759504B1 (ko) 2009-10-09 2017-07-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 표시 장치 및 이를 포함한 전자 기기
WO2011043206A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011043162A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
WO2011043194A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102576174B (zh) * 2009-10-09 2018-02-23 株式会社半导体能源研究所 液晶显示装置及包括该液晶显示装置的电子设备
WO2011043451A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Shift register and display device
EP2486593B1 (en) 2009-10-09 2017-02-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101843558B1 (ko) 2009-10-09 2018-03-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 시프트 레지스터, 표시 장치, 및 그 구동 방법
WO2011043164A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR101779349B1 (ko) 2009-10-14 2017-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101772639B1 (ko) * 2009-10-16 2017-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101698751B1 (ko) 2009-10-16 2017-01-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치 및 전자 장치
CN110824800B (zh) 2009-10-16 2022-07-26 株式会社半导体能源研究所 显示设备
IN2012DN01823A (enExample) 2009-10-16 2015-06-05 Semiconductor Energy Lab
WO2011046010A1 (en) 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device including the liquid crystal display device
WO2011048923A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. E-book reader
KR101490726B1 (ko) 2009-10-21 2015-02-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN107731931B (zh) 2009-10-21 2021-03-23 株式会社半导体能源研究所 显示装置和包括显示装置的电子设备
KR20220038542A (ko) 2009-10-21 2022-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 아날로그 회로 및 반도체 장치
KR101751908B1 (ko) 2009-10-21 2017-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전압 조정 회로
CN105702688B (zh) 2009-10-21 2020-09-08 株式会社半导体能源研究所 液晶显示器件及包括该液晶显示器件的电子设备
KR20170024130A (ko) * 2009-10-21 2017-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101803554B1 (ko) 2009-10-21 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작방법
KR102321812B1 (ko) 2009-10-29 2021-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
MY164205A (en) 2009-10-29 2017-11-30 Semiconductor Energy Lab Semiconductor device
WO2011052437A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
KR101752518B1 (ko) 2009-10-30 2017-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101712340B1 (ko) * 2009-10-30 2017-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 구동 회로를 포함하는 표시 장치, 및 표시 장치를 포함하는 전자 기기
KR20120099657A (ko) 2009-10-30 2012-09-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
WO2011052382A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011052366A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
WO2011052344A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, driving method of the same, and electronic appliance including the same
KR101837102B1 (ko) * 2009-10-30 2018-03-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN104282691B (zh) * 2009-10-30 2018-05-18 株式会社半导体能源研究所 半导体装置
WO2011052411A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
WO2011052410A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Power diode, rectifier, and semiconductor device including the same
KR101796909B1 (ko) 2009-10-30 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 비선형 소자, 표시 장치, 및 전자 기기
CN102687400B (zh) 2009-10-30 2016-08-24 株式会社半导体能源研究所 逻辑电路和半导体装置
CN102668096B (zh) * 2009-10-30 2015-04-29 株式会社半导体能源研究所 半导体装置及其制造方法
CN102598279B (zh) * 2009-11-06 2015-10-07 株式会社半导体能源研究所 半导体装置
KR101727469B1 (ko) 2009-11-06 2017-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101605984B1 (ko) 2009-11-06 2016-03-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102598284B (zh) * 2009-11-06 2015-04-15 株式会社半导体能源研究所 半导体器件
KR102286284B1 (ko) 2009-11-06 2021-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101876473B1 (ko) 2009-11-06 2018-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
WO2011055769A1 (en) * 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor element and semiconductor device, and deposition apparatus
JP5539846B2 (ja) 2009-11-06 2014-07-02 株式会社半導体エネルギー研究所 評価方法、半導体装置の作製方法
KR101930230B1 (ko) 2009-11-06 2018-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하기 위한 방법
CN104600074A (zh) 2009-11-06 2015-05-06 株式会社半导体能源研究所 半导体装置
KR101824123B1 (ko) 2009-11-06 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101861980B1 (ko) * 2009-11-06 2018-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011058882A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and manufacturing method thereof, and transistor
WO2011058852A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011058864A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Device including nonvolatile memory element
KR101931206B1 (ko) 2009-11-13 2018-12-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101751560B1 (ko) * 2009-11-13 2017-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101975741B1 (ko) * 2009-11-13 2019-05-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 타깃 재료의 포장 방법 및 타깃의 장착 방법
KR20120106950A (ko) * 2009-11-13 2012-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟 및 그 제작 방법 및 트랜지스터
KR20220116369A (ko) 2009-11-13 2022-08-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이 표시 장치를 구비한 전자 기기
CN102612714B (zh) 2009-11-13 2016-06-29 株式会社半导体能源研究所 半导体器件及其驱动方法
WO2011058913A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011062029A1 (en) 2009-11-18 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
KR101829176B1 (ko) 2009-11-20 2018-02-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102598266B (zh) * 2009-11-20 2015-04-22 株式会社半导体能源研究所 半导体装置
KR101800852B1 (ko) 2009-11-20 2017-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011062068A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5762723B2 (ja) 2009-11-20 2015-08-12 株式会社半導体エネルギー研究所 変調回路及びそれを備えた半導体装置
KR101945660B1 (ko) * 2009-11-20 2019-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
KR101823861B1 (ko) 2009-11-20 2018-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치
WO2011062041A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Transistor
KR101928723B1 (ko) 2009-11-20 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN103151266B (zh) 2009-11-20 2016-08-03 株式会社半导体能源研究所 用于制造半导体器件的方法
WO2011065183A1 (en) * 2009-11-24 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory cell
KR101911382B1 (ko) * 2009-11-27 2018-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102446585B1 (ko) * 2009-11-27 2022-09-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
WO2011065198A1 (en) 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011065209A1 (en) * 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
KR101825345B1 (ko) 2009-11-28 2018-02-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 적층 산화물 재료, 반도체 장치 및 반도체 장치의 제작 방법
KR101824124B1 (ko) 2009-11-28 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011065210A1 (en) * 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
KR102304078B1 (ko) 2009-11-28 2021-09-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
CN102648490B (zh) * 2009-11-30 2016-08-17 株式会社半导体能源研究所 液晶显示设备、用于驱动该液晶显示设备的方法、以及包括该液晶显示设备的电子设备
KR20120107107A (ko) * 2009-12-04 2012-09-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101840623B1 (ko) * 2009-12-04 2018-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이를 포함하는 전자 기기
KR101501420B1 (ko) * 2009-12-04 2015-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2011068025A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Dc converter circuit and power supply circuit
WO2011068028A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and method for manufacturing the same
JP2011139052A (ja) 2009-12-04 2011-07-14 Semiconductor Energy Lab Co Ltd 半導体記憶装置
CN104992962B (zh) * 2009-12-04 2018-12-25 株式会社半导体能源研究所 半导体器件及其制造方法
WO2011068016A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102640272B (zh) * 2009-12-04 2015-05-20 株式会社半导体能源研究所 半导体装置及其制造方法
CN105609509A (zh) * 2009-12-04 2016-05-25 株式会社半导体能源研究所 显示装置
KR20210043743A (ko) 2009-12-04 2021-04-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
JP5584103B2 (ja) 2009-12-04 2014-09-03 株式会社半導体エネルギー研究所 半導体装置
KR102153034B1 (ko) 2009-12-04 2020-09-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20120106786A (ko) * 2009-12-08 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101945171B1 (ko) 2009-12-08 2019-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011070902A1 (en) 2009-12-10 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
JP5727204B2 (ja) 2009-12-11 2015-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101804589B1 (ko) 2009-12-11 2018-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101894821B1 (ko) 2009-12-11 2018-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011070887A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
WO2011070929A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR101720072B1 (ko) 2009-12-11 2017-03-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치
WO2011074590A1 (en) 2009-12-17 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, measurement apparatus, and measurement method of relative permittivity
CN102656625B (zh) 2009-12-18 2016-08-03 株式会社半导体能源研究所 用于驱动液晶显示设备的方法
WO2011074409A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101887837B1 (ko) 2009-12-18 2018-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광 센서를 포함하는 표시 장치 및 그 구동 방법
KR101913111B1 (ko) 2009-12-18 2018-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011074407A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102640207A (zh) 2009-12-18 2012-08-15 株式会社半导体能源研究所 液晶显示装置及其驱动方法
KR102352590B1 (ko) 2009-12-18 2022-01-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 기기
US9057758B2 (en) * 2009-12-18 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for measuring current, method for inspecting semiconductor device, semiconductor device, and test element group
WO2011074408A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Non-volatile latch circuit and logic circuit, and semiconductor device using the same
CN102652396B (zh) 2009-12-23 2015-12-16 株式会社半导体能源研究所 半导体装置
WO2011077926A1 (en) 2009-12-24 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
WO2011077916A1 (en) 2009-12-24 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101874779B1 (ko) 2009-12-25 2018-07-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 메모리 장치, 반도체 장치, 및 전자 장치
KR101613701B1 (ko) 2009-12-25 2016-04-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 구동 방법
KR20170142998A (ko) 2009-12-25 2017-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
KR101870119B1 (ko) 2009-12-25 2018-06-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8441009B2 (en) * 2009-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102656690B (zh) 2009-12-25 2016-04-20 株式会社半导体能源研究所 半导体装置
WO2011077978A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
KR101842413B1 (ko) 2009-12-28 2018-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN109390215B (zh) 2009-12-28 2023-08-15 株式会社半导体能源研究所 制造半导体装置的方法
WO2011081041A1 (en) * 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
CN105353551A (zh) 2009-12-28 2016-02-24 株式会社半导体能源研究所 液晶显示装置及电子设备
KR101760537B1 (ko) * 2009-12-28 2017-07-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102480794B1 (ko) 2009-12-28 2022-12-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치와 반도체 장치
KR101182441B1 (ko) * 2010-01-13 2012-09-12 삼성디스플레이 주식회사 유기 박막 패턴 형성 방법 및 유기 발광 디스플레이 장치의 제조 방법
US8780629B2 (en) * 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR101848516B1 (ko) * 2010-01-15 2018-04-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102696064B (zh) 2010-01-15 2015-11-25 株式会社半导体能源研究所 半导体装置和电子装置
KR101798367B1 (ko) 2010-01-15 2017-11-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20120099483A (ko) 2010-01-15 2012-09-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 구동하는 방법
WO2011086871A1 (en) * 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011086812A1 (en) * 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8415731B2 (en) * 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
WO2011089832A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device and liquid crystal display device
CN102714029B (zh) * 2010-01-20 2016-03-23 株式会社半导体能源研究所 显示装置的显示方法
KR102011801B1 (ko) 2010-01-20 2019-08-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 구동 방법
KR102257147B1 (ko) * 2010-01-20 2021-05-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 휴대 전화기
EP2526622B1 (en) 2010-01-20 2015-09-23 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
WO2011089847A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving the same
CN102713999B (zh) 2010-01-20 2016-01-20 株式会社半导体能源研究所 电子设备和电子系统
US9984617B2 (en) 2010-01-20 2018-05-29 Semiconductor Energy Laboratory Co., Ltd. Display device including light emitting element
KR102248998B1 (ko) 2010-01-20 2021-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전자 기기
KR101842860B1 (ko) 2010-01-20 2018-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법
KR102174859B1 (ko) * 2010-01-22 2020-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102714209B (zh) 2010-01-22 2015-09-16 株式会社半导体能源研究所 半导体存储器件及其驱动方法
KR101829309B1 (ko) 2010-01-22 2018-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI525377B (zh) 2010-01-24 2016-03-11 半導體能源研究所股份有限公司 顯示裝置
KR101805378B1 (ko) 2010-01-24 2017-12-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치와 이의 제조 방법
KR102135326B1 (ko) 2010-01-24 2020-07-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR20120120330A (ko) 2010-01-29 2012-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101948707B1 (ko) * 2010-01-29 2019-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
WO2011093151A1 (en) 2010-01-29 2011-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the same
US9391209B2 (en) 2010-02-05 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102725842B (zh) 2010-02-05 2014-12-03 株式会社半导体能源研究所 半导体器件
KR102026603B1 (ko) * 2010-02-05 2019-10-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102742001B (zh) * 2010-02-05 2017-03-22 株式会社半导体能源研究所 半导体装置
WO2011096264A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US8436403B2 (en) 2010-02-05 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor provided with sidewall and electronic appliance
WO2011096277A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
CN105405747B (zh) 2010-02-05 2020-03-13 株式会社半导体能源研究所 半导体装置和制造半导体装置的方法
KR20150010776A (ko) * 2010-02-05 2015-01-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제조 방법
KR101791713B1 (ko) 2010-02-05 2017-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터 및 반도체 장치
WO2011096153A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101810261B1 (ko) 2010-02-10 2017-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터
US8947337B2 (en) 2010-02-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Display device
KR102129413B1 (ko) 2010-02-12 2020-07-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 구동 방법
US8617920B2 (en) 2010-02-12 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011099376A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
EP2534679B1 (en) 2010-02-12 2021-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
WO2011099343A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR101775180B1 (ko) 2010-02-12 2017-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
KR101838130B1 (ko) 2010-02-12 2018-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작방법
KR101817054B1 (ko) * 2010-02-12 2018-01-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 포함한 표시 장치
WO2011099336A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
WO2011102227A1 (en) 2010-02-18 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
CN102754163B (zh) * 2010-02-19 2015-11-25 株式会社半导体能源研究所 半导体器件
KR101820776B1 (ko) 2010-02-19 2018-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101889285B1 (ko) * 2010-02-19 2018-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치, 그 구동 방법, 및 반도체 장치 제작 방법
CN102754162B (zh) 2010-02-19 2015-12-09 株式会社半导体能源研究所 半导体器件及半导体器件的驱动方法
CN105826363B (zh) * 2010-02-19 2020-01-14 株式会社半导体能源研究所 半导体装置及其制造方法
CN105786268B (zh) * 2010-02-19 2019-03-12 株式会社半导体能源研究所 显示设备及其驱动方法
JP5740169B2 (ja) * 2010-02-19 2015-06-24 株式会社半導体エネルギー研究所 トランジスタの作製方法
KR20180110212A (ko) 2010-02-19 2018-10-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터 및 이를 이용한 표시 장치
KR101848684B1 (ko) * 2010-02-19 2018-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 장치
KR101780748B1 (ko) 2010-02-19 2017-09-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 복조회로 및 복조회로를 이용한 ｒｆｉｄ 태그
KR101832119B1 (ko) 2010-02-19 2018-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102386149B1 (ko) 2010-02-23 2022-04-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
CN102770903B (zh) * 2010-02-26 2015-10-07 株式会社半导体能源研究所 显示装置及具备该显示装置的电子书阅读器
WO2011105198A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9000438B2 (en) 2010-02-26 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20180001562A (ko) * 2010-02-26 2018-01-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하기 위한 방법
KR20130009978A (ko) * 2010-02-26 2013-01-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자의 제조 방법 및 성막 장치
WO2011105310A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101950364B1 (ko) 2010-02-26 2019-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
CN102763203B (zh) 2010-02-26 2016-10-26 株式会社半导体能源研究所 制造半导体装置的方法
WO2011105200A1 (en) * 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
DE112011100756B4 (de) 2010-03-02 2016-09-15 Semiconductor Energy Laboratory Co., Ltd. Impulssignal-Ausgangsschaltung und Schieberegister
WO2011108367A1 (en) 2010-03-02 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Boosting circuit and rfid tag including boosting circuit
KR101838628B1 (ko) * 2010-03-02 2018-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 펄스 신호 출력 회로 및 시프트 레지스터
DE112011100749B4 (de) 2010-03-02 2015-06-11 Semiconductor Energy Laboratory Co., Ltd. Impulssignal-Ausgangsschaltung und Schieberegister
KR101932909B1 (ko) * 2010-03-04 2018-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치 및 반도체 장치
WO2011108374A1 (en) * 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR102341927B1 (ko) * 2010-03-05 2021-12-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2011108346A1 (en) * 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor film and manufacturing method of transistor
WO2011111504A1 (en) 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Electronic device and electronic system
KR101812467B1 (ko) * 2010-03-08 2017-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
DE112011100841B4 (de) * 2010-03-08 2021-11-25 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und verfahren zur herstellung der halbleitervorrichtung
WO2011111490A1 (en) * 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
TWI594173B (zh) * 2010-03-08 2017-08-01 半導體能源研究所股份有限公司 電子裝置及電子系統
KR20130007597A (ko) 2010-03-08 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치를 제작하는 방법
WO2011111549A1 (en) 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011111508A1 (en) * 2010-03-12 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Method for driving input circuit and method for driving input-output device
KR101840185B1 (ko) 2010-03-12 2018-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 회로를 구동하는 방법 및 표시 장치를 구동하는 방법
KR101769970B1 (ko) 2010-03-12 2017-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101823853B1 (ko) * 2010-03-12 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8900362B2 (en) 2010-03-12 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of gallium oxide single crystal
KR101770550B1 (ko) * 2010-03-12 2017-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법
WO2011114866A1 (en) * 2010-03-17 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
KR101840797B1 (ko) * 2010-03-19 2018-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치
WO2011114868A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011114867A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
US20110227082A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011114919A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011118351A1 (en) * 2010-03-25 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101862539B1 (ko) * 2010-03-26 2018-05-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5731244B2 (ja) * 2010-03-26 2015-06-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2011118741A1 (en) * 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011118510A1 (en) * 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101799757B1 (ko) 2010-03-26 2017-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하는 방법
KR20130069583A (ko) 2010-03-31 2013-06-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 필드 시퀀셜 구동형 표시 장치
WO2011122299A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
KR101761966B1 (ko) 2010-03-31 2017-07-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전력 공급 장치와 그 구동 방법
WO2011122280A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
WO2011122312A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for driving the same
US9190522B2 (en) 2010-04-02 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor
US9196739B2 (en) 2010-04-02 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor film and metal oxide film
US8884282B2 (en) 2010-04-02 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102292523B1 (ko) 2010-04-02 2021-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9147768B2 (en) 2010-04-02 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor and a metal oxide film
KR20130032304A (ko) 2010-04-02 2013-04-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011125453A1 (en) 2010-04-07 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Transistor
KR101884031B1 (ko) 2010-04-07 2018-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
US8207025B2 (en) 2010-04-09 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2011125455A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
WO2011125454A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011125806A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
DE112011101260T5 (de) 2010-04-09 2013-05-02 Semiconductor Energy Laboratory Co., Ltd. Flüssigkristall-Anzeigevorrichtung und Verfahren zum Ansteuern derselben
US8653514B2 (en) 2010-04-09 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011125456A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5744366B2 (ja) 2010-04-12 2015-07-08 株式会社半導体エネルギー研究所 液晶表示装置
US8854583B2 (en) 2010-04-12 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device
KR20130061678A (ko) 2010-04-16 2013-06-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전원 회로
CN102844847B (zh) 2010-04-16 2015-09-23 株式会社半导体能源研究所 沉积方法及半导体装置的制造方法
US8552712B2 (en) 2010-04-16 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Current measurement method, inspection method of semiconductor device, semiconductor device, and test element group
KR101904445B1 (ko) 2010-04-16 2018-10-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8692243B2 (en) 2010-04-20 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011132548A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN104851810B (zh) 2010-04-23 2018-08-28 株式会社半导体能源研究所 半导体装置的制造方法
KR101877377B1 (ko) 2010-04-23 2018-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
WO2011132591A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9537043B2 (en) 2010-04-23 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
KR102390961B1 (ko) 2010-04-23 2022-04-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
DE112011101410B4 (de) 2010-04-23 2018-03-01 Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Herstellen einer Halbleitervorrichtung
WO2011132555A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
US8941395B2 (en) 2010-04-27 2015-01-27 3M Innovative Properties Company Integrated passive circuit elements for sensing devices
WO2011135999A1 (en) 2010-04-27 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2011135987A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011136018A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic appliance
US8890555B2 (en) 2010-04-28 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for measuring transistor
CN103109314B (zh) 2010-04-28 2016-05-04 株式会社半导体能源研究所 半导体显示装置及其驱动方法
US9697788B2 (en) 2010-04-28 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9349325B2 (en) 2010-04-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US9478185B2 (en) 2010-05-12 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
US9064473B2 (en) 2010-05-12 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
JP5797449B2 (ja) 2010-05-13 2015-10-21 株式会社半導体エネルギー研究所 半導体装置の評価方法
US8664658B2 (en) 2010-05-14 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011142467A1 (en) 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI511236B (zh) 2010-05-14 2015-12-01 Semiconductor Energy Lab 半導體裝置
WO2011142371A1 (en) 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9490368B2 (en) 2010-05-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US8416622B2 (en) 2010-05-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Driving method of a semiconductor device with an inverted period having a negative potential applied to a gate of an oxide semiconductor transistor
US9496405B2 (en) 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
US8588000B2 (en) 2010-05-20 2013-11-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device having a reading transistor with a back-gate electrode
US8624239B2 (en) 2010-05-20 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011145632A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US8629438B2 (en) 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011145707A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
JP5766012B2 (ja) 2010-05-21 2015-08-19 株式会社半導体エネルギー研究所 液晶表示装置
JP5714973B2 (ja) 2010-05-21 2015-05-07 株式会社半導体エネルギー研究所 半導体装置
KR101872188B1 (ko) 2010-05-21 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 표시 장치
WO2011145484A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011145467A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011145468A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US8906756B2 (en) 2010-05-21 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011145634A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130082091A (ko) 2010-05-21 2013-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011145633A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5852793B2 (ja) 2010-05-21 2016-02-03 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
WO2011145537A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP5749975B2 (ja) 2010-05-28 2015-07-15 株式会社半導体エネルギー研究所 光検出装置、及び、タッチパネル
US8895375B2 (en) 2010-06-01 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and method for manufacturing the same
WO2011152286A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011152233A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011152254A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8779433B2 (en) 2010-06-04 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011155295A1 (en) 2010-06-10 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Dc/dc converter, power supply circuit, and semiconductor device
WO2011155302A1 (en) 2010-06-11 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8610180B2 (en) 2010-06-11 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Gas sensor and method for manufacturing the gas sensor
KR101938726B1 (ko) 2010-06-11 2019-01-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
JP5797471B2 (ja) 2010-06-16 2015-10-21 株式会社半導体エネルギー研究所 入出力装置
JP5823740B2 (ja) 2010-06-16 2015-11-25 株式会社半導体エネルギー研究所 入出力装置
US9209314B2 (en) 2010-06-16 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
WO2011158704A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8637802B2 (en) 2010-06-18 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
US8552425B2 (en) 2010-06-18 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101862808B1 (ko) 2010-06-18 2018-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011162147A1 (en) 2010-06-23 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20120000499A (ko) 2010-06-25 2012-01-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터 및 반도체 장치
KR101746197B1 (ko) 2010-06-25 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법 및 반도체 장치의 검사 방법
WO2011162104A1 (en) 2010-06-25 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
WO2012002236A1 (en) 2010-06-29 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Wiring board, semiconductor device, and manufacturing methods thereof
WO2012002104A1 (en) 2010-06-30 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5771079B2 (ja) 2010-07-01 2015-08-26 株式会社半導体エネルギー研究所 撮像装置
WO2012002040A1 (en) 2010-07-01 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
US8441010B2 (en) 2010-07-01 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI541782B (zh) 2010-07-02 2016-07-11 半導體能源研究所股份有限公司 液晶顯示裝置
US8605059B2 (en) 2010-07-02 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Input/output device and driving method thereof
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8642380B2 (en) 2010-07-02 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9336739B2 (en) 2010-07-02 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP5792524B2 (ja) 2010-07-02 2015-10-14 株式会社半導体エネルギー研究所 装置
KR20130090405A (ko) 2010-07-02 2013-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
KR20180135118A (ko) 2010-07-02 2018-12-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN107195686B (zh) 2010-07-02 2021-02-09 株式会社半导体能源研究所 半导体装置
US8785241B2 (en) 2010-07-16 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN103003934B (zh) 2010-07-16 2015-07-01 株式会社半导体能源研究所 半导体器件
WO2012008286A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012008390A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8519387B2 (en) 2010-07-26 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing
KR101885691B1 (ko) 2010-07-27 2018-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101853516B1 (ko) 2010-07-27 2018-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI565001B (zh) 2010-07-28 2017-01-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
JP5846789B2 (ja) 2010-07-29 2016-01-20 株式会社半導体エネルギー研究所 半導体装置
WO2012014786A1 (en) 2010-07-30 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semicondcutor device and manufacturing method thereof
US8928466B2 (en) 2010-08-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101842181B1 (ko) 2010-08-04 2018-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8537600B2 (en) 2010-08-04 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Low off-state leakage current semiconductor memory device
JP5739257B2 (ja) 2010-08-05 2015-06-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5743790B2 (ja) 2010-08-06 2015-07-01 株式会社半導体エネルギー研究所 半導体装置
US8467232B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI524347B (zh) 2010-08-06 2016-03-01 半導體能源研究所股份有限公司 半導體裝置及其驅動方法
JP5671418B2 (ja) 2010-08-06 2015-02-18 株式会社半導体エネルギー研究所 半導体装置の駆動方法
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
TWI555128B (zh) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
US8803164B2 (en) 2010-08-06 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Solid-state image sensing device and semiconductor display device
KR101925159B1 (ko) 2010-08-06 2018-12-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5832181B2 (ja) 2010-08-06 2015-12-16 株式会社半導体エネルギー研究所 液晶表示装置
US8467231B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8792284B2 (en) 2010-08-06 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
TWI605549B (zh) 2010-08-06 2017-11-11 半導體能源研究所股份有限公司 半導體裝置
CN107947763B (zh) 2010-08-06 2021-12-28 株式会社半导体能源研究所 半导体集成电路
US9129703B2 (en) 2010-08-16 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor memory device
TWI621184B (zh) 2010-08-16 2018-04-11 半導體能源研究所股份有限公司 半導體裝置之製造方法
JP5848912B2 (ja) 2010-08-16 2016-01-27 株式会社半導体エネルギー研究所 液晶表示装置の制御回路、液晶表示装置、及び当該液晶表示装置を具備する電子機器
US9343480B2 (en) 2010-08-16 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI508294B (zh) 2010-08-19 2015-11-11 Semiconductor Energy Lab 半導體裝置
US8759820B2 (en) 2010-08-20 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8508276B2 (en) 2010-08-25 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including latch circuit
US8685787B2 (en) 2010-08-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8883555B2 (en) 2010-08-25 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Electronic device, manufacturing method of electronic device, and sputtering target
JP5727892B2 (ja) 2010-08-26 2015-06-03 株式会社半導体エネルギー研究所 半導体装置
US9058047B2 (en) 2010-08-26 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013009285A (ja) 2010-08-26 2013-01-10 Semiconductor Energy Lab Co Ltd 信号処理回路及びその駆動方法
JP5763474B2 (ja) 2010-08-27 2015-08-12 株式会社半導体エネルギー研究所 光センサ
JP5806043B2 (ja) 2010-08-27 2015-11-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR20120020073A (ko) 2010-08-27 2012-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 설계 방법
JP5674594B2 (ja) 2010-08-27 2015-02-25 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の駆動方法
US8603841B2 (en) 2010-08-27 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of semiconductor device and light-emitting display device
CN106298794B (zh) 2010-08-27 2019-07-30 株式会社半导体能源研究所 存储器件及半导体器件
US8450123B2 (en) 2010-08-27 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Oxygen diffusion evaluation method of oxide film stacked body
JP5702689B2 (ja) 2010-08-31 2015-04-15 株式会社半導体エネルギー研究所 半導体装置の駆動方法、及び半導体装置
US8634228B2 (en) 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8575610B2 (en) 2010-09-02 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
KR20130099074A (ko) 2010-09-03 2013-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟 및 반도체 장치의 제작 방법
WO2012029596A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2012029638A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20180015760A (ko) 2010-09-03 2018-02-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터 및 반도체 장치의 제조 방법
US8520426B2 (en) 2010-09-08 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US8487844B2 (en) 2010-09-08 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device including the same
JP2012256819A (ja) 2010-09-08 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置
KR20120026970A (ko) 2010-09-10 2012-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 발광 장치
US8766253B2 (en) 2010-09-10 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101824125B1 (ko) 2010-09-10 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US8797487B2 (en) 2010-09-10 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Transistor, liquid crystal display device, and manufacturing method thereof
US9142568B2 (en) 2010-09-10 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting display device
JP5815337B2 (ja) 2010-09-13 2015-11-17 株式会社半導体エネルギー研究所 半導体装置
KR101932576B1 (ko) 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8647919B2 (en) 2010-09-13 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and method for manufacturing the same
US8546161B2 (en) 2010-09-13 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and liquid crystal display device
KR101952235B1 (ko) 2010-09-13 2019-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US8835917B2 (en) 2010-09-13 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power diode, and rectifier
KR101872926B1 (ko) 2010-09-13 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5827520B2 (ja) 2010-09-13 2015-12-02 株式会社半導体エネルギー研究所 半導体記憶装置
US9496743B2 (en) 2010-09-13 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Power receiving device and wireless power feed system
US8558960B2 (en) 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
US8664097B2 (en) 2010-09-13 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8592879B2 (en) 2010-09-13 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI608486B (zh) 2010-09-13 2017-12-11 半導體能源研究所股份有限公司 半導體裝置
JP2012256821A (ja) 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
US9546416B2 (en) 2010-09-13 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Method of forming crystalline oxide semiconductor film
TWI539453B (zh) 2010-09-14 2016-06-21 半導體能源研究所股份有限公司 記憶體裝置和半導體裝置
WO2012035984A1 (en) 2010-09-15 2012-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US9230994B2 (en) 2010-09-15 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR20130106398A (ko) 2010-09-15 2013-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 그 제작 방법
JP2012256012A (ja) 2010-09-15 2012-12-27 Semiconductor Energy Lab Co Ltd 表示装置
US8767443B2 (en) 2010-09-22 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for inspecting the same
KR101856722B1 (ko) 2010-09-22 2018-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 파워 절연 게이트형 전계 효과 트랜지스터
US8792260B2 (en) 2010-09-27 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Rectifier circuit and semiconductor device using the same
TWI574259B (zh) 2010-09-29 2017-03-11 半導體能源研究所股份有限公司 半導體記憶體裝置和其驅動方法
TWI691960B (zh) 2010-10-05 2020-04-21 日商半導體能源研究所股份有限公司 半導體記憶體裝置及其驅動方法
US9437743B2 (en) 2010-10-07 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Thin film element, semiconductor device, and method for manufacturing the same
US8716646B2 (en) 2010-10-08 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for operating the same
US8679986B2 (en) 2010-10-14 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
TWI565079B (zh) 2010-10-20 2017-01-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US8803143B2 (en) 2010-10-20 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including buffer layers with high resistivity
TWI543158B (zh) 2010-10-25 2016-07-21 半導體能源研究所股份有限公司 半導體儲存裝置及其驅動方法
WO2012057296A1 (en) 2010-10-29 2012-05-03 Semiconductor Energy Laboratory Co., Ltd. Storage device
JP5771505B2 (ja) 2010-10-29 2015-09-02 株式会社半導体エネルギー研究所 受信回路
KR101924231B1 (ko) 2010-10-29 2018-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
CN105732401A (zh) 2010-11-02 2016-07-06 宇部兴产株式会社 (酰胺氨基烷烃)金属化合物及使用所述金属化合物制备含金属的薄膜的方法
US8916866B2 (en) 2010-11-03 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012060253A1 (en) 2010-11-05 2012-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8569754B2 (en) 2010-11-05 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI555205B (zh) 2010-11-05 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
JP6010291B2 (ja) 2010-11-05 2016-10-19 株式会社半導体エネルギー研究所 表示装置の駆動方法
KR101952733B1 (ko) 2010-11-05 2019-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9087744B2 (en) 2010-11-05 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving transistor
US8957468B2 (en) 2010-11-05 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Variable capacitor and liquid crystal display device
US8902637B2 (en) 2010-11-08 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device comprising inverting amplifier circuit and driving method thereof
TWI654764B (zh) 2010-11-11 2019-03-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP5770068B2 (ja) 2010-11-12 2015-08-26 株式会社半導体エネルギー研究所 半導体装置
US8854865B2 (en) 2010-11-24 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8936965B2 (en) 2010-11-26 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8816425B2 (en) 2010-11-30 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8629496B2 (en) 2010-11-30 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8823092B2 (en) 2010-11-30 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI525818B (zh) 2010-11-30 2016-03-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置之製造方法
US8809852B2 (en) 2010-11-30 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
US9103724B2 (en) 2010-11-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device
US8461630B2 (en) 2010-12-01 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5908263B2 (ja) 2010-12-03 2016-04-26 株式会社半導体エネルギー研究所 Ｄｃ−ｄｃコンバータ
KR20200052993A (ko) 2010-12-03 2020-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
TWI590249B (zh) 2010-12-03 2017-07-01 半導體能源研究所股份有限公司 積體電路，其驅動方法，及半導體裝置
JP5856827B2 (ja) 2010-12-09 2016-02-10 株式会社半導体エネルギー研究所 半導体装置
TWI534905B (zh) 2010-12-10 2016-05-21 半導體能源研究所股份有限公司 顯示裝置及顯示裝置之製造方法
JP5707914B2 (ja) * 2010-12-13 2015-04-30 ソニー株式会社 酸化物半導体を用いる装置、表示装置、及び、電子機器
JP2012256020A (ja) 2010-12-15 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置及びその駆動方法
US8730416B2 (en) 2010-12-17 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9202822B2 (en) 2010-12-17 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2012142562A (ja) 2010-12-17 2012-07-26 Semiconductor Energy Lab Co Ltd 半導体記憶装置
US8894825B2 (en) 2010-12-17 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing the same, manufacturing semiconductor device
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
JP5852874B2 (ja) 2010-12-28 2016-02-03 株式会社半導体エネルギー研究所 半導体装置
US9048142B2 (en) 2010-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5864054B2 (ja) 2010-12-28 2016-02-17 株式会社半導体エネルギー研究所 半導体装置
US8883556B2 (en) 2010-12-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9443984B2 (en) 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5993141B2 (ja) 2010-12-28 2016-09-14 株式会社半導体エネルギー研究所 記憶装置
US8735892B2 (en) 2010-12-28 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using oxide semiconductor
US9911858B2 (en) 2010-12-28 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5975635B2 (ja) 2010-12-28 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
JP5784479B2 (ja) 2010-12-28 2015-09-24 株式会社半導体エネルギー研究所 半導体装置
JP2012151453A (ja) 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法
JP6030298B2 (ja) 2010-12-28 2016-11-24 株式会社半導体エネルギー研究所 緩衝記憶装置及び信号処理回路
WO2012090799A1 (en) 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI562142B (en) 2011-01-05 2016-12-11 Semiconductor Energy Lab Co Ltd Storage element, storage device, and signal processing circuit
US8536571B2 (en) 2011-01-12 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
TWI570809B (zh) 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8921948B2 (en) 2011-01-12 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8912080B2 (en) 2011-01-12 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of the semiconductor device
TWI535032B (zh) 2011-01-12 2016-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8421071B2 (en) 2011-01-13 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Memory device
US8575678B2 (en) 2011-01-13 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device with floating gate
TWI619230B (zh) 2011-01-14 2018-03-21 半導體能源研究所股份有限公司 半導體記憶裝置
KR102026718B1 (ko) 2011-01-14 2019-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억장치, 반도체 장치, 검출 방법
JP5859839B2 (ja) 2011-01-14 2016-02-16 株式会社半導体エネルギー研究所 記憶素子の駆動方法、及び、記憶素子
KR101942701B1 (ko) 2011-01-20 2019-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체 소자 및 반도체 장치
TWI602303B (zh) 2011-01-26 2017-10-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI657580B (zh) 2011-01-26 2019-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI564890B (zh) 2011-01-26 2017-01-01 半導體能源研究所股份有限公司 記憶體裝置及半導體裝置
TWI570920B (zh) 2011-01-26 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
WO2012102182A1 (en) 2011-01-26 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012102183A1 (en) 2011-01-26 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5798933B2 (ja) 2011-01-26 2015-10-21 株式会社半導体エネルギー研究所 信号処理回路
TWI525619B (zh) 2011-01-27 2016-03-11 半導體能源研究所股份有限公司 記憶體電路
WO2012102181A1 (en) 2011-01-27 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101899375B1 (ko) 2011-01-28 2018-09-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9494829B2 (en) 2011-01-28 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device containing the same
US8634230B2 (en) 2011-01-28 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
KR101984218B1 (ko) 2011-01-28 2019-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법 및 반도체 장치
TWI520273B (zh) 2011-02-02 2016-02-01 半導體能源研究所股份有限公司 半導體儲存裝置
JP6000560B2 (ja) 2011-02-02 2016-09-28 株式会社半導体エネルギー研究所 半導体メモリ装置
US9799773B2 (en) 2011-02-02 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US8513773B2 (en) 2011-02-02 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Capacitor and semiconductor device including dielectric and N-type semiconductor
US9431400B2 (en) 2011-02-08 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for manufacturing the same
US8787083B2 (en) 2011-02-10 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Memory circuit
TWI569041B (zh) 2011-02-14 2017-02-01 半導體能源研究所股份有限公司 顯示裝置
KR101899880B1 (ko) 2011-02-17 2018-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 ｌｓｉ
US8975680B2 (en) 2011-02-17 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method manufacturing semiconductor memory device
US8643007B2 (en) 2011-02-23 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8709920B2 (en) 2011-02-24 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9443455B2 (en) 2011-02-25 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Display device having a plurality of pixels
US9691772B2 (en) 2011-03-03 2017-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including memory cell which includes transistor and capacitor
US9023684B2 (en) 2011-03-04 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5898527B2 (ja) 2011-03-04 2016-04-06 株式会社半導体エネルギー研究所 半導体装置
US8785933B2 (en) 2011-03-04 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9646829B2 (en) 2011-03-04 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8841664B2 (en) 2011-03-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8659015B2 (en) 2011-03-04 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8659957B2 (en) 2011-03-07 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US8625085B2 (en) 2011-03-08 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Defect evaluation method for semiconductor
US9099437B2 (en) 2011-03-08 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5827145B2 (ja) 2011-03-08 2015-12-02 株式会社半導体エネルギー研究所 信号処理回路
US8541781B2 (en) 2011-03-10 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8772849B2 (en) 2011-03-10 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2012121265A1 (en) 2011-03-10 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for manufacturing the same
TWI521612B (zh) 2011-03-11 2016-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP2012209543A (ja) 2011-03-11 2012-10-25 Semiconductor Energy Lab Co Ltd 半導体装置
TWI541904B (zh) 2011-03-11 2016-07-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8760903B2 (en) 2011-03-11 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Storage circuit
JP5933300B2 (ja) 2011-03-16 2016-06-08 株式会社半導体エネルギー研究所 半導体装置
KR101900525B1 (ko) 2011-03-18 2018-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막, 반도체 장치, 및 반도체 장치의 제작 방법
JP5933897B2 (ja) 2011-03-18 2016-06-15 株式会社半導体エネルギー研究所 半導体装置
US8859330B2 (en) 2011-03-23 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5839474B2 (ja) 2011-03-24 2016-01-06 株式会社半導体エネルギー研究所 信号処理回路
US8956944B2 (en) 2011-03-25 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9012904B2 (en) 2011-03-25 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8987728B2 (en) 2011-03-25 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US9219159B2 (en) 2011-03-25 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
TWI545652B (zh) 2011-03-25 2016-08-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI582999B (zh) 2011-03-25 2017-05-11 半導體能源研究所股份有限公司 場效電晶體及包含該場效電晶體之記憶體與半導體電路
US8686416B2 (en) 2011-03-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP6053098B2 (ja) 2011-03-28 2016-12-27 株式会社半導体エネルギー研究所 半導体装置
US8927329B2 (en) 2011-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device with improved electronic properties
JP5879165B2 (ja) 2011-03-30 2016-03-08 株式会社半導体エネルギー研究所 半導体装置
TWI567735B (zh) 2011-03-31 2017-01-21 半導體能源研究所股份有限公司 記憶體電路，記憶體單元，及訊號處理電路
US8686486B2 (en) 2011-03-31 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9082860B2 (en) 2011-03-31 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8541266B2 (en) 2011-04-01 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5982147B2 (ja) 2011-04-01 2016-08-31 株式会社半導体エネルギー研究所 発光装置
US9960278B2 (en) 2011-04-06 2018-05-01 Yuhei Sato Manufacturing method of semiconductor device
US9142320B2 (en) 2011-04-08 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
JP2012256406A (ja) 2011-04-08 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置、及び当該記憶装置を用いた半導体装置
US9093538B2 (en) 2011-04-08 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9012905B2 (en) 2011-04-08 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
JP5883699B2 (ja) 2011-04-13 2016-03-15 株式会社半導体エネルギー研究所 プログラマブルｌｓｉ
US9478668B2 (en) 2011-04-13 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US8854867B2 (en) 2011-04-13 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method of the memory device
US9070776B2 (en) 2011-04-15 2015-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP6045176B2 (ja) 2011-04-15 2016-12-14 株式会社半導体エネルギー研究所 半導体装置
US8878174B2 (en) 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit
US8779488B2 (en) 2011-04-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP6001900B2 (ja) 2011-04-21 2016-10-05 株式会社半導体エネルギー研究所 信号処理回路
US8809854B2 (en) 2011-04-22 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8932913B2 (en) 2011-04-22 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US10079053B2 (en) 2011-04-22 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Memory element and memory device
JP5946683B2 (ja) 2011-04-22 2016-07-06 株式会社半導体エネルギー研究所 半導体装置
US9006803B2 (en) 2011-04-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US9331206B2 (en) 2011-04-22 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Oxide material and semiconductor device
US8878288B2 (en) 2011-04-22 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8941958B2 (en) 2011-04-22 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916868B2 (en) 2011-04-22 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN102760697B (zh) 2011-04-27 2016-08-03 株式会社半导体能源研究所 半导体装置的制造方法
US8729545B2 (en) 2011-04-28 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
KR101919056B1 (ko) 2011-04-28 2018-11-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 회로
US8681533B2 (en) 2011-04-28 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Memory circuit, signal processing circuit, and electronic device
US9935622B2 (en) 2011-04-28 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Comparator and semiconductor device including comparator
TWI525615B (zh) 2011-04-29 2016-03-11 半導體能源研究所股份有限公司 半導體儲存裝置
US8785923B2 (en) 2011-04-29 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8476927B2 (en) 2011-04-29 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9111795B2 (en) 2011-04-29 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor connected to memory element through oxide semiconductor film
KR101963457B1 (ko) 2011-04-29 2019-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치 및 그 구동 방법
US8848464B2 (en) 2011-04-29 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US9614094B2 (en) 2011-04-29 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer and method for driving the same
US8446171B2 (en) 2011-04-29 2013-05-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing unit
TWI792087B (zh) 2011-05-05 2023-02-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8709922B2 (en) 2011-05-06 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI568181B (zh) 2011-05-06 2017-01-21 半導體能源研究所股份有限公司 邏輯電路及半導體裝置
US9117701B2 (en) 2011-05-06 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101874144B1 (ko) 2011-05-06 2018-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
US8809928B2 (en) 2011-05-06 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and method for manufacturing the semiconductor device
WO2012153473A1 (en) 2011-05-06 2012-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9443844B2 (en) 2011-05-10 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Gain cell semiconductor memory device and driving method thereof
US8946066B2 (en) 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI541978B (zh) 2011-05-11 2016-07-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置之驅動方法
TWI557711B (zh) 2011-05-12 2016-11-11 半導體能源研究所股份有限公司 顯示裝置的驅動方法
US8847233B2 (en) 2011-05-12 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film
JP6110075B2 (ja) 2011-05-13 2017-04-05 株式会社半導体エネルギー研究所 表示装置
US9048788B2 (en) 2011-05-13 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photoelectric conversion portion
US9954110B2 (en) 2011-05-13 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device
US9093539B2 (en) 2011-05-13 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2012157472A1 (en) 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9466618B2 (en) 2011-05-13 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including two thin film transistors and method of manufacturing the same
TWI536502B (zh) 2011-05-13 2016-06-01 半導體能源研究所股份有限公司 記憶體電路及電子裝置
JP6013773B2 (ja) 2011-05-13 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
US9105749B2 (en) 2011-05-13 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2012157463A1 (en) 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5886128B2 (ja) 2011-05-13 2016-03-16 株式会社半導体エネルギー研究所 半導体装置
SG11201503709SA (en) 2011-05-13 2015-07-30 Semiconductor Energy Lab Semiconductor device
KR101889383B1 (ko) 2011-05-16 2018-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 로직 디바이스
TWI570891B (zh) 2011-05-17 2017-02-11 半導體能源研究所股份有限公司 半導體裝置
TWI571058B (zh) 2011-05-18 2017-02-11 半導體能源研究所股份有限公司 半導體裝置與驅動半導體裝置之方法
TWI552150B (zh) 2011-05-18 2016-10-01 半導體能源研究所股份有限公司 半導體儲存裝置
US8779799B2 (en) 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
KR102093909B1 (ko) 2011-05-19 2020-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 회로 및 회로의 구동 방법
US8709889B2 (en) 2011-05-19 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and manufacturing method thereof
KR101991735B1 (ko) 2011-05-19 2019-06-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
JP6006975B2 (ja) 2011-05-19 2016-10-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102081792B1 (ko) 2011-05-19 2020-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 연산회로 및 연산회로의 구동방법
US8581625B2 (en) 2011-05-19 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8837203B2 (en) 2011-05-19 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6013680B2 (ja) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
JP5820336B2 (ja) 2011-05-20 2015-11-24 株式会社半導体エネルギー研究所 半導体装置
TWI573136B (zh) 2011-05-20 2017-03-01 半導體能源研究所股份有限公司 儲存裝置及信號處理電路
WO2012160963A1 (en) 2011-05-20 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5951351B2 (ja) 2011-05-20 2016-07-13 株式会社半導体エネルギー研究所 加算器及び全加算器
WO2012161059A1 (en) 2011-05-20 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
TWI570730B (zh) 2011-05-20 2017-02-11 半導體能源研究所股份有限公司 半導體裝置
JP5936908B2 (ja) 2011-05-20 2016-06-22 株式会社半導体エネルギー研究所 パリティビット出力回路およびパリティチェック回路
JP5947099B2 (ja) 2011-05-20 2016-07-06 株式会社半導体エネルギー研究所 半導体装置
TWI614995B (zh) 2011-05-20 2018-02-11 半導體能源研究所股份有限公司 鎖相迴路及使用此鎖相迴路之半導體裝置
TWI557739B (zh) 2011-05-20 2016-11-11 半導體能源研究所股份有限公司 半導體積體電路
JP5820335B2 (ja) 2011-05-20 2015-11-24 株式会社半導体エネルギー研究所 半導体装置
TWI501226B (zh) 2011-05-20 2015-09-21 Semiconductor Energy Lab 記憶體裝置及驅動記憶體裝置的方法
US8508256B2 (en) 2011-05-20 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
TWI559683B (zh) 2011-05-20 2016-11-21 半導體能源研究所股份有限公司 半導體積體電路
JP6013682B2 (ja) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP6030334B2 (ja) 2011-05-20 2016-11-24 株式会社半導体エネルギー研究所 記憶装置
JP5892852B2 (ja) 2011-05-20 2016-03-23 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
JP6091083B2 (ja) 2011-05-20 2017-03-08 株式会社半導体エネルギー研究所 記憶装置
TWI616873B (zh) 2011-05-20 2018-03-01 半導體能源研究所股份有限公司 儲存裝置及信號處理電路
JP5886496B2 (ja) 2011-05-20 2016-03-16 株式会社半導体エネルギー研究所 半導体装置
US20120298998A1 (en) 2011-05-25 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
US9171840B2 (en) 2011-05-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101912971B1 (ko) 2011-05-26 2018-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 분주 회로 및 분주 회로를 이용한 반도체 장치
TWI534956B (zh) 2011-05-27 2016-05-21 半導體能源研究所股份有限公司 調整電路及驅動調整電路之方法
JP5912844B2 (ja) 2011-05-31 2016-04-27 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
US9467047B2 (en) 2011-05-31 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, power source circuit, and semiconductor device
US8669781B2 (en) 2011-05-31 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN107419225B (zh) 2011-06-08 2020-08-04 株式会社半导体能源研究所 溅射靶材、溅射靶材的制造方法及薄膜形成方法
JP5890251B2 (ja) 2011-06-08 2016-03-22 株式会社半導体エネルギー研究所 通信方法
JP2013016243A (ja) 2011-06-09 2013-01-24 Semiconductor Energy Lab Co Ltd 記憶装置
JP6104522B2 (ja) 2011-06-10 2017-03-29 株式会社半導体エネルギー研究所 半導体装置
US8958263B2 (en) 2011-06-10 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8891285B2 (en) 2011-06-10 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP6009226B2 (ja) 2011-06-10 2016-10-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6005401B2 (ja) 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8804405B2 (en) 2011-06-16 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US9299852B2 (en) 2011-06-16 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI575751B (zh) 2011-06-16 2017-03-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9099885B2 (en) 2011-06-17 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Wireless power feeding system
US9166055B2 (en) 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8901554B2 (en) 2011-06-17 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including channel formation region including oxide semiconductor
KR102546888B1 (ko) 2011-06-17 2023-06-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 디스플레이 장치
KR20130007426A (ko) 2011-06-17 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8673426B2 (en) 2011-06-29 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
US8878589B2 (en) 2011-06-30 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9130044B2 (en) 2011-07-01 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9496138B2 (en) 2011-07-08 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device
US9490241B2 (en) 2011-07-08 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a first inverter and a second inverter
KR102014876B1 (ko) 2011-07-08 2019-08-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
TWI565067B (zh) 2011-07-08 2017-01-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9214474B2 (en) 2011-07-08 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9385238B2 (en) 2011-07-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Transistor using oxide semiconductor
US8748886B2 (en) 2011-07-08 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR101459502B1 (ko) * 2011-07-13 2014-11-07 어플라이드 머티어리얼스, 인코포레이티드 박막 트랜지스터 디바이스들을 제조하는 방법들
US8836626B2 (en) 2011-07-15 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9200952B2 (en) 2011-07-15 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photodetector and an analog arithmetic circuit
US8847220B2 (en) 2011-07-15 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013042117A (ja) 2011-07-15 2013-02-28 Semiconductor Energy Lab Co Ltd 半導体装置
US8946812B2 (en) 2011-07-21 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8716073B2 (en) 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device
US8643008B2 (en) 2011-07-22 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9012993B2 (en) 2011-07-22 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102297329B1 (ko) 2011-07-22 2021-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
JP6013685B2 (ja) 2011-07-22 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
US8994019B2 (en) 2011-08-05 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8718224B2 (en) 2011-08-05 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
JP6006572B2 (ja) 2011-08-18 2016-10-12 株式会社半導体エネルギー研究所 半導体装置
TWI575494B (zh) 2011-08-19 2017-03-21 半導體能源研究所股份有限公司 半導體裝置的驅動方法
JP6128775B2 (ja) 2011-08-19 2017-05-17 株式会社半導体エネルギー研究所 半導体装置
JP6116149B2 (ja) 2011-08-24 2017-04-19 株式会社半導体エネルギー研究所 半導体装置
TWI761910B (zh) 2011-08-29 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置
US9252279B2 (en) 2011-08-31 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9660092B2 (en) 2011-08-31 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor including oxygen release layer
JP6016532B2 (ja) 2011-09-07 2016-10-26 株式会社半導体エネルギー研究所 半導体装置
JP6050054B2 (ja) 2011-09-09 2016-12-21 株式会社半導体エネルギー研究所 半導体装置
US8802493B2 (en) 2011-09-13 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor device
JP5825744B2 (ja) 2011-09-15 2015-12-02 株式会社半導体エネルギー研究所 パワー絶縁ゲート型電界効果トランジスタ
US9082663B2 (en) 2011-09-16 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2013039126A1 (en) 2011-09-16 2013-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8952379B2 (en) 2011-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5832399B2 (ja) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 発光装置
CN103022012B (zh) 2011-09-21 2017-03-01 株式会社半导体能源研究所 半导体存储装置
KR101976228B1 (ko) 2011-09-22 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광 검출 장치 및 광 검출 장치의 구동 방법
WO2013042562A1 (en) 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9431545B2 (en) 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8841675B2 (en) 2011-09-23 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Minute transistor
KR102108572B1 (ko) 2011-09-26 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP2013084333A (ja) 2011-09-28 2013-05-09 Semiconductor Energy Lab Co Ltd シフトレジスタ回路
DE112012004076T5 (de) 2011-09-29 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
KR102504604B1 (ko) 2011-09-29 2023-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI613822B (zh) 2011-09-29 2018-02-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR101506303B1 (ko) 2011-09-29 2015-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제작 방법
JP5806905B2 (ja) 2011-09-30 2015-11-10 株式会社半導体エネルギー研究所 半導体装置
US8982607B2 (en) 2011-09-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
US20130087784A1 (en) 2011-10-05 2013-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10014068B2 (en) 2011-10-07 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013093561A (ja) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd 酸化物半導体膜及び半導体装置
JP6022880B2 (ja) 2011-10-07 2016-11-09 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP5912394B2 (ja) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 半導体装置
JP6026839B2 (ja) 2011-10-13 2016-11-16 株式会社半導体エネルギー研究所 半導体装置
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US9117916B2 (en) 2011-10-13 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
US9287405B2 (en) 2011-10-13 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
US9018629B2 (en) 2011-10-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR20130040706A (ko) 2011-10-14 2013-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN104025301B (zh) 2011-10-14 2017-01-18 株式会社半导体能源研究所 半导体装置
KR20130043063A (ko) 2011-10-19 2013-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
TWI567985B (zh) 2011-10-21 2017-01-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP6045285B2 (ja) 2011-10-24 2016-12-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101976212B1 (ko) 2011-10-24 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP6226518B2 (ja) 2011-10-24 2017-11-08 株式会社半導体エネルギー研究所 半導体装置
KR20130046357A (ko) 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6082562B2 (ja) 2011-10-27 2017-02-15 株式会社半導体エネルギー研究所 半導体装置
KR20140086954A (ko) 2011-10-28 2014-07-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR102012981B1 (ko) 2011-11-09 2019-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5933895B2 (ja) 2011-11-10 2016-06-15 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
US9082861B2 (en) 2011-11-11 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Transistor with oxide semiconductor channel having protective layer
KR101984739B1 (ko) 2011-11-11 2019-05-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 신호선 구동 회로 및 액정 표시 장치
US8796682B2 (en) 2011-11-11 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JP6076038B2 (ja) 2011-11-11 2017-02-08 株式会社半導体エネルギー研究所 表示装置の作製方法
JP6122275B2 (ja) 2011-11-11 2017-04-26 株式会社半導体エネルギー研究所 表示装置
US8878177B2 (en) 2011-11-11 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR20130055521A (ko) 2011-11-18 2013-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자, 및 반도체 소자의 제작 방법, 및 반도체 소자를 포함하는 반도체 장치
US8969130B2 (en) 2011-11-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof
US8962386B2 (en) 2011-11-25 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8772094B2 (en) 2011-11-25 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6099368B2 (ja) 2011-11-25 2017-03-22 株式会社半導体エネルギー研究所 記憶装置
JP6059968B2 (ja) 2011-11-25 2017-01-11 株式会社半導体エネルギー研究所 半導体装置、及び液晶表示装置
US8951899B2 (en) 2011-11-25 2015-02-10 Semiconductor Energy Laboratory Method for manufacturing semiconductor device
US9057126B2 (en) 2011-11-29 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target and method for manufacturing semiconductor device
TWI669760B (zh) 2011-11-30 2019-08-21 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
US9076871B2 (en) 2011-11-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6147992B2 (ja) 2011-11-30 2017-06-14 株式会社半導体エネルギー研究所 半導体装置
KR102072244B1 (ko) 2011-11-30 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
TWI639150B (zh) 2011-11-30 2018-10-21 日商半導體能源研究所股份有限公司 半導體顯示裝置
US20130137232A1 (en) 2011-11-30 2013-05-30 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
TWI621185B (zh) 2011-12-01 2018-04-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20140101817A (ko) 2011-12-02 2014-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2013137853A (ja) 2011-12-02 2013-07-11 Semiconductor Energy Lab Co Ltd 記憶装置および記憶装置の駆動方法
JP6050662B2 (ja) 2011-12-02 2016-12-21 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP5929136B2 (ja) * 2011-12-05 2016-06-01 セイコーエプソン株式会社 電気光学装置および電子機器
US9257422B2 (en) 2011-12-06 2016-02-09 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving signal processing circuit
JP6081171B2 (ja) 2011-12-09 2017-02-15 株式会社半導体エネルギー研究所 記憶装置
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
JP6105266B2 (ja) 2011-12-15 2017-03-29 株式会社半導体エネルギー研究所 記憶装置
KR102084274B1 (ko) 2011-12-15 2020-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8785258B2 (en) 2011-12-20 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2013149953A (ja) 2011-12-20 2013-08-01 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
US8748240B2 (en) 2011-12-22 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2013130802A (ja) 2011-12-22 2013-07-04 Semiconductor Energy Lab Co Ltd 半導体装置、画像表示装置、記憶装置、及び電子機器
JP6012450B2 (ja) 2011-12-23 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
TWI580189B (zh) 2011-12-23 2017-04-21 半導體能源研究所股份有限公司 位準位移電路及半導體積體電路
US8704221B2 (en) 2011-12-23 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6033071B2 (ja) 2011-12-23 2016-11-30 株式会社半導体エネルギー研究所 半導体装置
TWI580047B (zh) 2011-12-23 2017-04-21 半導體能源研究所股份有限公司 半導體裝置
WO2013094547A1 (en) 2011-12-23 2013-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6053490B2 (ja) 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI569446B (zh) 2011-12-23 2017-02-01 半導體能源研究所股份有限公司 半導體元件、半導體元件的製造方法、及包含半導體元件的半導體裝置
WO2013099537A1 (en) 2011-12-26 2013-07-04 Semiconductor Energy Laboratory Co., Ltd. Motion recognition device
KR102100425B1 (ko) 2011-12-27 2020-04-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
TWI584383B (zh) 2011-12-27 2017-05-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102103913B1 (ko) 2012-01-10 2020-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP2013168926A (ja) 2012-01-18 2013-08-29 Semiconductor Energy Lab Co Ltd 回路、センサ回路及びセンサ回路を用いた半導体装置
US8969867B2 (en) 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9040981B2 (en) 2012-01-20 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102097171B1 (ko) 2012-01-20 2020-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9099560B2 (en) 2012-01-20 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102296696B1 (ko) 2012-01-23 2021-09-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9653614B2 (en) 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20220088814A (ko) 2012-01-25 2022-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8956912B2 (en) 2012-01-26 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9006733B2 (en) 2012-01-26 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
TWI642193B (zh) 2012-01-26 2018-11-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US9419146B2 (en) 2012-01-26 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6091905B2 (ja) 2012-01-26 2017-03-08 株式会社半導体エネルギー研究所 半導体装置
TWI561951B (en) 2012-01-30 2016-12-11 Semiconductor Energy Lab Co Ltd Power supply circuit
TWI562361B (en) 2012-02-02 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device
US9196741B2 (en) 2012-02-03 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102101167B1 (ko) 2012-02-03 2020-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9362417B2 (en) 2012-02-03 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916424B2 (en) 2012-02-07 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9859114B2 (en) 2012-02-08 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device with an oxygen-controlling insulating layer
JP5981157B2 (ja) 2012-02-09 2016-08-31 株式会社半導体エネルギー研究所 半導体装置
JP6125850B2 (ja) 2012-02-09 2017-05-10 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US20130207111A1 (en) 2012-02-09 2013-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device
US9112037B2 (en) 2012-02-09 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8817516B2 (en) 2012-02-17 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Memory circuit and semiconductor device
JP2014063557A (ja) 2012-02-24 2014-04-10 Semiconductor Energy Lab Co Ltd 記憶装置及び半導体装置
US20130221345A1 (en) 2012-02-28 2013-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8988152B2 (en) 2012-02-29 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9553200B2 (en) 2012-02-29 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9312257B2 (en) 2012-02-29 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6151530B2 (ja) 2012-02-29 2017-06-21 株式会社半導体エネルギー研究所 イメージセンサ、カメラ、及び監視システム
JP6046514B2 (ja) 2012-03-01 2016-12-14 株式会社半導体エネルギー研究所 半導体装置
JP2013183001A (ja) 2012-03-01 2013-09-12 Semiconductor Energy Lab Co Ltd 半導体装置
US8975917B2 (en) 2012-03-01 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9176571B2 (en) 2012-03-02 2015-11-03 Semiconductor Energy Laboratories Co., Ltd. Microprocessor and method for driving microprocessor
US9287370B2 (en) 2012-03-02 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Memory device comprising a transistor including an oxide semiconductor and semiconductor device including the same
US9735280B2 (en) 2012-03-02 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film
JP6100559B2 (ja) 2012-03-05 2017-03-22 株式会社半導体エネルギー研究所 半導体記憶装置
JP6041707B2 (ja) 2012-03-05 2016-12-14 株式会社半導体エネルギー研究所 ラッチ回路および半導体装置
US8995218B2 (en) 2012-03-07 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8981370B2 (en) 2012-03-08 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN107340509B (zh) 2012-03-09 2020-04-14 株式会社半导体能源研究所 半导体装置的驱动方法
CN104170001B (zh) 2012-03-13 2017-03-01 株式会社半导体能源研究所 发光装置及其驱动方法
KR102108248B1 (ko) 2012-03-14 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막, 트랜지스터, 및 반도체 장치
US9058892B2 (en) 2012-03-14 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and shift register
JP6168795B2 (ja) 2012-03-14 2017-07-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9117409B2 (en) 2012-03-14 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device with transistor and capacitor discharging gate of driving electrode and oxide semiconductor layer
US9541386B2 (en) 2012-03-21 2017-01-10 Semiconductor Energy Laboratory Co., Ltd. Distance measurement device and distance measurement system
US9324449B2 (en) 2012-03-28 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device
US9349849B2 (en) 2012-03-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the semiconductor device
JP6169376B2 (ja) 2012-03-28 2017-07-26 株式会社半導体エネルギー研究所 電池管理ユニット、保護回路、蓄電装置
JP6139187B2 (ja) 2012-03-29 2017-05-31 株式会社半導体エネルギー研究所 半導体装置
JP2013229013A (ja) 2012-03-29 2013-11-07 Semiconductor Energy Lab Co Ltd アレイコントローラ及びストレージシステム
KR102044725B1 (ko) 2012-03-29 2019-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전원 제어 장치
US9786793B2 (en) 2012-03-29 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer including regions with different concentrations of resistance-reducing elements
US8941113B2 (en) 2012-03-30 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
US8999773B2 (en) 2012-04-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Processing method of stacked-layer film and manufacturing method of semiconductor device
US9711110B2 (en) 2012-04-06 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Display device comprising grayscale conversion portion and display portion
US9793444B2 (en) 2012-04-06 2017-10-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US8901556B2 (en) 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
JP2013232885A (ja) 2012-04-06 2013-11-14 Semiconductor Energy Lab Co Ltd 半導体リレー
JP5975907B2 (ja) 2012-04-11 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
US9208849B2 (en) 2012-04-12 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device, and electronic device
US9276121B2 (en) 2012-04-12 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6059566B2 (ja) 2012-04-13 2017-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6128906B2 (ja) 2012-04-13 2017-05-17 株式会社半導体エネルギー研究所 半導体装置
US9030232B2 (en) 2012-04-13 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Isolator circuit and semiconductor device
KR102479944B1 (ko) 2012-04-13 2022-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6143423B2 (ja) 2012-04-16 2017-06-07 株式会社半導体エネルギー研究所 半導体装置の製造方法
JP6001308B2 (ja) 2012-04-17 2016-10-05 株式会社半導体エネルギー研究所 半導体装置
JP6076612B2 (ja) 2012-04-17 2017-02-08 株式会社半導体エネルギー研究所 半導体装置
US9029863B2 (en) 2012-04-20 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9219164B2 (en) 2012-04-20 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor channel
US9006024B2 (en) 2012-04-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9236408B2 (en) 2012-04-25 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including photodiode
US9230683B2 (en) 2012-04-25 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9331689B2 (en) 2012-04-27 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Power supply circuit and semiconductor device including the same
JP6199583B2 (ja) 2012-04-27 2017-09-20 株式会社半導体エネルギー研究所 半導体装置
US9285848B2 (en) 2012-04-27 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Power reception control device, power reception device, power transmission and reception system, and electronic device
US8860022B2 (en) 2012-04-27 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP6100071B2 (ja) 2012-04-30 2017-03-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6228381B2 (ja) 2012-04-30 2017-11-08 株式会社半導体エネルギー研究所 半導体装置
US9048323B2 (en) 2012-04-30 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9007090B2 (en) 2012-05-01 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of driving semiconductor device
US9703704B2 (en) 2012-05-01 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6035195B2 (ja) 2012-05-01 2016-11-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6100076B2 (ja) 2012-05-02 2017-03-22 株式会社半導体エネルギー研究所 プロセッサ
SG11201505224PA (en) 2012-05-02 2015-08-28 Semiconductor Energy Lab Programmable logic device
US8866510B2 (en) 2012-05-02 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013250965A (ja) 2012-05-02 2013-12-12 Semiconductor Energy Lab Co Ltd 半導体装置およびその駆動方法
KR102025722B1 (ko) 2012-05-02 2019-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 온도 센서 회로, 및 온도 센서 회로를 사용한 반도체 장치
JP6227890B2 (ja) 2012-05-02 2017-11-08 株式会社半導体エネルギー研究所 信号処理回路および制御回路
JP6243136B2 (ja) 2012-05-02 2017-12-06 株式会社半導体エネルギー研究所 スイッチングコンバータ
KR20130125717A (ko) 2012-05-09 2013-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
KR102173074B1 (ko) 2012-05-10 2020-11-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2013168687A1 (en) 2012-05-10 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102069158B1 (ko) 2012-05-10 2020-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 배선의 형성 방법, 반도체 장치, 및 반도체 장치의 제작 방법
KR102087443B1 (ko) 2012-05-11 2020-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
DE102013207324A1 (de) 2012-05-11 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und elektronisches Gerät
US8994891B2 (en) 2012-05-16 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and touch panel
US8929128B2 (en) 2012-05-17 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Storage device and writing method of the same
US9817032B2 (en) 2012-05-23 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Measurement device
JP2014003594A (ja) 2012-05-25 2014-01-09 Semiconductor Energy Lab Co Ltd 半導体装置及びその駆動方法
CN104321967B (zh) 2012-05-25 2018-01-09 株式会社半导体能源研究所 可编程逻辑装置及半导体装置
JP6050721B2 (ja) 2012-05-25 2016-12-21 株式会社半導体エネルギー研究所 半導体装置
JP6250955B2 (ja) 2012-05-25 2017-12-20 株式会社半導体エネルギー研究所 半導体装置の駆動方法
KR102164990B1 (ko) 2012-05-25 2020-10-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 소자의 구동 방법
US9147706B2 (en) 2012-05-29 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having sensor circuit having amplifier circuit
JP6377317B2 (ja) 2012-05-30 2018-08-22 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
US9048265B2 (en) 2012-05-31 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising oxide semiconductor layer
US8995607B2 (en) 2012-05-31 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
JP6208469B2 (ja) 2012-05-31 2017-10-04 株式会社半導体エネルギー研究所 半導体装置
JP6158588B2 (ja) 2012-05-31 2017-07-05 株式会社半導体エネルギー研究所 発光装置
KR102388690B1 (ko) 2012-05-31 2022-04-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102119914B1 (ko) 2012-05-31 2020-06-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US9343120B2 (en) 2012-06-01 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. High speed processing unit with non-volatile register
US9135182B2 (en) 2012-06-01 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Central processing unit and driving method thereof
US8872174B2 (en) 2012-06-01 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
KR20150023547A (ko) 2012-06-01 2015-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스 및 경보 장치
US9916793B2 (en) 2012-06-01 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving the same
JP2014027263A (ja) 2012-06-15 2014-02-06 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US8901557B2 (en) 2012-06-15 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9059219B2 (en) 2012-06-27 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9742378B2 (en) 2012-06-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit and semiconductor device
KR102161077B1 (ko) 2012-06-29 2020-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
DE112013003041T5 (de) 2012-06-29 2015-03-12 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
KR102082794B1 (ko) 2012-06-29 2020-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법, 및 표시 장치
US8873308B2 (en) 2012-06-29 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
KR102099445B1 (ko) 2012-06-29 2020-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN102751307A (zh) * 2012-06-29 2012-10-24 昆山工研院新型平板显示技术中心有限公司 一种可进行透明不透明转换的显示器
US9083327B2 (en) 2012-07-06 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
JP6310194B2 (ja) 2012-07-06 2018-04-11 株式会社半導体エネルギー研究所 半導体装置
US9054678B2 (en) 2012-07-06 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR102099262B1 (ko) 2012-07-11 2020-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치, 및 액정 표시 장치의 구동 방법
JP2014032399A (ja) 2012-07-13 2014-02-20 Semiconductor Energy Lab Co Ltd 液晶表示装置
JP6006558B2 (ja) 2012-07-17 2016-10-12 株式会社半導体エネルギー研究所 半導体装置及びその製造方法
JP6185311B2 (ja) 2012-07-20 2017-08-23 株式会社半導体エネルギー研究所 電源制御回路、及び信号処理回路
WO2014013958A1 (en) 2012-07-20 2014-01-23 Semiconductor Energy Laboratory Co., Ltd. Display device
KR102262323B1 (ko) 2012-07-20 2021-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
CN104488016B (zh) 2012-07-20 2018-08-10 株式会社半导体能源研究所 显示装置及具有该显示装置的电子设备
JP2014042004A (ja) 2012-07-26 2014-03-06 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
KR20140013931A (ko) 2012-07-26 2014-02-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
JP6224931B2 (ja) 2012-07-27 2017-11-01 株式会社半導体エネルギー研究所 半導体装置
JP2014045175A (ja) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd 半導体装置
JP6134598B2 (ja) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 半導体装置
SG10201700805WA (en) 2012-08-03 2017-02-27 Semiconductor Energy Lab Co Ltd Oxide semiconductor stacked film and semiconductor device
WO2014021356A1 (en) 2012-08-03 2014-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10557192B2 (en) 2012-08-07 2020-02-11 Semiconductor Energy Laboratory Co., Ltd. Method for using sputtering target and method for forming oxide film
US9885108B2 (en) 2012-08-07 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming sputtering target
US9929276B2 (en) 2012-08-10 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014057298A (ja) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
JP2014057296A (ja) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
US9245958B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102171650B1 (ko) 2012-08-10 2020-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP6220597B2 (ja) 2012-08-10 2017-10-25 株式会社半導体エネルギー研究所 半導体装置
WO2014025002A1 (en) 2012-08-10 2014-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
JP2014199899A (ja) 2012-08-10 2014-10-23 株式会社半導体エネルギー研究所 半導体装置
JP6211843B2 (ja) 2012-08-10 2017-10-11 株式会社半導体エネルギー研究所 半導体装置
TWI581404B (zh) 2012-08-10 2017-05-01 半導體能源研究所股份有限公司 半導體裝置以及該半導體裝置的驅動方法
US8937307B2 (en) 2012-08-10 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8872120B2 (en) 2012-08-23 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and method for driving the same
KR102069683B1 (ko) 2012-08-24 2020-01-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 방사선 검출 패널, 방사선 촬상 장치, 및 화상 진단 장치
US9625764B2 (en) 2012-08-28 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
DE102013216824B4 (de) 2012-08-28 2024-10-17 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
KR20140029202A (ko) 2012-08-28 2014-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR102161078B1 (ko) 2012-08-28 2020-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제작 방법
TWI575663B (zh) 2012-08-31 2017-03-21 半導體能源研究所股份有限公司 半導體裝置
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2014034820A1 (en) 2012-09-03 2014-03-06 Semiconductor Energy Laboratory Co., Ltd. Microcontroller
DE102013217278B4 (de) 2012-09-12 2017-03-30 Semiconductor Energy Laboratory Co., Ltd. Photodetektorschaltung, Bildgebungsvorrichtung und Verfahren zum Ansteuern einer Photodetektorschaltung
KR102691397B1 (ko) 2012-09-13 2024-08-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US8981372B2 (en) 2012-09-13 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
US9018624B2 (en) 2012-09-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
TWI761605B (zh) 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8927985B2 (en) 2012-09-20 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014046222A1 (en) 2012-09-24 2014-03-27 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI709244B (zh) 2012-09-24 2020-11-01 日商半導體能源研究所股份有限公司 半導體裝置
JP6290576B2 (ja) 2012-10-12 2018-03-07 株式会社半導体エネルギー研究所 液晶表示装置及びその駆動方法
TWI681233B (zh) 2012-10-12 2020-01-01 日商半導體能源研究所股份有限公司 液晶顯示裝置、觸控面板及液晶顯示裝置的製造方法
KR102226090B1 (ko) 2012-10-12 2021-03-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법 및 반도체 장치의 제조 장치
JP6351947B2 (ja) 2012-10-12 2018-07-04 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
WO2014061762A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6021586B2 (ja) 2012-10-17 2016-11-09 株式会社半導体エネルギー研究所 半導体装置
DE112013005029T5 (de) 2012-10-17 2015-07-30 Semiconductor Energy Laboratory Co., Ltd. Mikrocontroller und Herstellungsverfahren dafür
US9166021B2 (en) 2012-10-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102102589B1 (ko) 2012-10-17 2020-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그램 가능한 논리 장치
TWI591966B (zh) 2012-10-17 2017-07-11 半導體能源研究所股份有限公司 可編程邏輯裝置及可編程邏輯裝置的驅動方法
JP2014082388A (ja) 2012-10-17 2014-05-08 Semiconductor Energy Lab Co Ltd 半導体装置
JP6283191B2 (ja) 2012-10-17 2018-02-21 株式会社半導体エネルギー研究所 半導体装置
JP6059501B2 (ja) 2012-10-17 2017-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102227591B1 (ko) 2012-10-17 2021-03-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5951442B2 (ja) 2012-10-17 2016-07-13 株式会社半導体エネルギー研究所 半導体装置
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
JP6204145B2 (ja) 2012-10-23 2017-09-27 株式会社半導体エネルギー研究所 半導体装置
KR102279459B1 (ko) 2012-10-24 2021-07-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2014065343A1 (en) 2012-10-24 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9865743B2 (en) 2012-10-24 2018-01-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide layer surrounding oxide semiconductor layer
TWI637517B (zh) 2012-10-24 2018-10-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9287411B2 (en) 2012-10-24 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2014065389A1 (en) 2012-10-25 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Central control system
JP6219562B2 (ja) 2012-10-30 2017-10-25 株式会社半導体エネルギー研究所 表示装置及び電子機器
KR102178068B1 (ko) 2012-11-06 2020-11-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
KR102072340B1 (ko) 2012-11-08 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 금속 산화물 막 및 금속 산화물 막의 형성 방법
TWI605593B (zh) 2012-11-15 2017-11-11 半導體能源研究所股份有限公司 半導體裝置
JP6220641B2 (ja) 2012-11-15 2017-10-25 株式会社半導体エネルギー研究所 半導体装置
TWI608616B (zh) 2012-11-15 2017-12-11 半導體能源研究所股份有限公司 半導體裝置
JP6285150B2 (ja) 2012-11-16 2018-02-28 株式会社半導体エネルギー研究所 半導体装置
TWI620323B (zh) 2012-11-16 2018-04-01 半導體能源研究所股份有限公司 半導體裝置
TWI661553B (zh) 2012-11-16 2019-06-01 日商半導體能源研究所股份有限公司 半導體裝置
JP6317059B2 (ja) 2012-11-16 2018-04-25 株式会社半導体エネルギー研究所 半導体装置及び表示装置
TWI882464B (zh) 2012-11-28 2025-05-01 日商半導體能源研究所股份有限公司 顯示裝置
KR102148549B1 (ko) 2012-11-28 2020-08-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US9412764B2 (en) 2012-11-28 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
US9263531B2 (en) 2012-11-28 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, film formation method thereof, and semiconductor device
TWI627483B (zh) 2012-11-28 2018-06-21 半導體能源研究所股份有限公司 顯示裝置及電視接收機
US9594281B2 (en) 2012-11-30 2017-03-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2014130336A (ja) 2012-11-30 2014-07-10 Semiconductor Energy Lab Co Ltd 表示装置
TWI582993B (zh) 2012-11-30 2017-05-11 半導體能源研究所股份有限公司 半導體裝置
KR102526635B1 (ko) 2012-11-30 2023-04-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9153649B2 (en) 2012-11-30 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for evaluating semiconductor device
US9246011B2 (en) 2012-11-30 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9349593B2 (en) 2012-12-03 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9406810B2 (en) 2012-12-03 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102207028B1 (ko) 2012-12-03 2021-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102112364B1 (ko) 2012-12-06 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9577446B2 (en) 2012-12-13 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Power storage system and power storage device storing data for the identifying power storage device
TWI611419B (zh) 2012-12-24 2018-01-11 半導體能源研究所股份有限公司 可程式邏輯裝置及半導體裝置
KR102241249B1 (ko) 2012-12-25 2021-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 저항 소자, 표시 장치, 및 전자기기
WO2014103900A1 (en) 2012-12-25 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9905585B2 (en) 2012-12-25 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising capacitor
WO2014103901A1 (en) * 2012-12-25 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014142986A (ja) 2012-12-26 2014-08-07 Semiconductor Energy Lab Co Ltd 半導体装置
CN104904018B (zh) 2012-12-28 2019-04-09 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
TWI607510B (zh) 2012-12-28 2017-12-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US9316695B2 (en) 2012-12-28 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014143410A (ja) 2012-12-28 2014-08-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP6329762B2 (ja) 2012-12-28 2018-05-23 株式会社半導体エネルギー研究所 半導体装置
WO2014104267A1 (en) 2012-12-28 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9391096B2 (en) 2013-01-18 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI614813B (zh) 2013-01-21 2018-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
US9466725B2 (en) 2013-01-24 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9190172B2 (en) 2013-01-24 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6223198B2 (ja) 2013-01-24 2017-11-01 株式会社半導体エネルギー研究所 半導体装置
TWI619010B (zh) 2013-01-24 2018-03-21 半導體能源研究所股份有限公司 半導體裝置
JP5807076B2 (ja) 2013-01-24 2015-11-10 株式会社半導体エネルギー研究所 半導体装置
US9076825B2 (en) 2013-01-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US8981374B2 (en) 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI593025B (zh) 2013-01-30 2017-07-21 半導體能源研究所股份有限公司 氧化物半導體層的處理方法
TWI618252B (zh) 2013-02-12 2018-03-11 半導體能源研究所股份有限公司 半導體裝置
KR102112367B1 (ko) 2013-02-12 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8952723B2 (en) 2013-02-13 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9190527B2 (en) 2013-02-13 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
US9231111B2 (en) 2013-02-13 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102125593B1 (ko) 2013-02-13 2020-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 로직 디바이스 및 반도체 장치
US9318484B2 (en) 2013-02-20 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI611566B (zh) 2013-02-25 2018-01-11 半導體能源研究所股份有限公司 顯示裝置和電子裝置
US9293544B2 (en) 2013-02-26 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having buried channel structure
TWI612321B (zh) 2013-02-27 2018-01-21 半導體能源研究所股份有限公司 成像裝置
US9373711B2 (en) 2013-02-27 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI611567B (zh) 2013-02-27 2018-01-11 半導體能源研究所股份有限公司 半導體裝置、驅動電路及顯示裝置
JP2014195243A (ja) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd 半導体装置
JP6141777B2 (ja) 2013-02-28 2017-06-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2014195241A (ja) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd 半導体装置
KR102238682B1 (ko) 2013-02-28 2021-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
JP2014195060A (ja) 2013-03-01 2014-10-09 Semiconductor Energy Lab Co Ltd センサ回路及びセンサ回路を用いた半導体装置
JP6250883B2 (ja) 2013-03-01 2017-12-20 株式会社半導体エネルギー研究所 半導体装置
KR102153110B1 (ko) 2013-03-06 2020-09-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체막 및 반도체 장치
US9269315B2 (en) 2013-03-08 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8947121B2 (en) 2013-03-12 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
TWI644433B (zh) 2013-03-13 2018-12-11 半導體能源研究所股份有限公司 半導體裝置
JP2014199709A (ja) 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 記憶装置、半導体装置
US9294075B2 (en) 2013-03-14 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20150128820A (ko) 2013-03-14 2015-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 구동 방법 및 반도체 장치
KR102290247B1 (ko) 2013-03-14 2021-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
JP6283237B2 (ja) 2013-03-14 2018-02-21 株式会社半導体エネルギー研究所 半導体装置
JP2014199708A (ja) 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP6298662B2 (ja) 2013-03-14 2018-03-20 株式会社半導体エネルギー研究所 半導体装置
US9245650B2 (en) 2013-03-15 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9786350B2 (en) 2013-03-18 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9153650B2 (en) 2013-03-19 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor
US9577107B2 (en) 2013-03-19 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and method for forming oxide semiconductor film
US9007092B2 (en) 2013-03-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6355374B2 (ja) 2013-03-22 2018-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6093726B2 (ja) 2013-03-22 2017-03-08 株式会社半導体エネルギー研究所 半導体装置
WO2014157019A1 (en) 2013-03-25 2014-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6272713B2 (ja) 2013-03-25 2018-01-31 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス及び半導体装置
US10347769B2 (en) 2013-03-25 2019-07-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multi-layer source/drain electrodes
JP6376788B2 (ja) 2013-03-26 2018-08-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP6316630B2 (ja) 2013-03-26 2018-04-25 株式会社半導体エネルギー研究所 半導体装置
US9608122B2 (en) 2013-03-27 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014209209A (ja) 2013-03-28 2014-11-06 株式会社半導体エネルギー研究所 表示装置
US9368636B2 (en) 2013-04-01 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device comprising a plurality of oxide semiconductor layers
JP6300589B2 (ja) 2013-04-04 2018-03-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9112460B2 (en) 2013-04-05 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Signal processing device
JP6224338B2 (ja) 2013-04-11 2017-11-01 株式会社半導体エネルギー研究所 半導体装置、表示装置及び半導体装置の作製方法
JP6198434B2 (ja) 2013-04-11 2017-09-20 株式会社半導体エネルギー研究所 表示装置及び電子機器
JP6280794B2 (ja) 2013-04-12 2018-02-14 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法
TWI620324B (zh) 2013-04-12 2018-04-01 半導體能源研究所股份有限公司 半導體裝置
US10304859B2 (en) 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
JP6333028B2 (ja) 2013-04-19 2018-05-30 株式会社半導体エネルギー研究所 記憶装置及び半導体装置
JP6456598B2 (ja) 2013-04-19 2019-01-23 株式会社半導体エネルギー研究所 表示装置
US9915848B2 (en) 2013-04-19 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9893192B2 (en) 2013-04-24 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI647559B (zh) 2013-04-24 2019-01-11 Semiconductor Energy Laboratory Co., Ltd. 顯示裝置
JP6401483B2 (ja) 2013-04-26 2018-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6396671B2 (ja) 2013-04-26 2018-09-26 株式会社半導体エネルギー研究所 半導体装置
TWI644434B (zh) 2013-04-29 2018-12-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI631711B (zh) 2013-05-01 2018-08-01 半導體能源研究所股份有限公司 半導體裝置
KR102222344B1 (ko) 2013-05-02 2021-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9882058B2 (en) 2013-05-03 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9231002B2 (en) 2013-05-03 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
CN105190902B (zh) 2013-05-09 2019-01-29 株式会社半导体能源研究所 半导体装置及其制造方法
US9704894B2 (en) 2013-05-10 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Display device including pixel electrode including oxide
US9246476B2 (en) 2013-05-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit
TWI621337B (zh) 2013-05-14 2018-04-11 半導體能源研究所股份有限公司 信號處理裝置
TWI618058B (zh) 2013-05-16 2018-03-11 半導體能源研究所股份有限公司 半導體裝置
US9312392B2 (en) 2013-05-16 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI627751B (zh) 2013-05-16 2018-06-21 半導體能源研究所股份有限公司 半導體裝置
TWI639235B (zh) 2013-05-16 2018-10-21 半導體能源研究所股份有限公司 半導體裝置
US9454923B2 (en) 2013-05-17 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9172369B2 (en) 2013-05-17 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US10032872B2 (en) 2013-05-17 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and apparatus for manufacturing semiconductor device
US9209795B2 (en) 2013-05-17 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Signal processing device and measuring method
US9754971B2 (en) 2013-05-18 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9293599B2 (en) 2013-05-20 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
DE102014208859B4 (de) 2013-05-20 2021-03-11 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
WO2014188893A1 (en) 2013-05-20 2014-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI664731B (zh) 2013-05-20 2019-07-01 半導體能源研究所股份有限公司 半導體裝置
US9343579B2 (en) 2013-05-20 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9647125B2 (en) 2013-05-20 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102442752B1 (ko) 2013-05-20 2022-09-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10416504B2 (en) 2013-05-21 2019-09-17 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2014188983A1 (en) 2013-05-21 2014-11-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and formation method thereof
CN103325792A (zh) * 2013-05-23 2013-09-25 合肥京东方光电科技有限公司 一种阵列基板及制备方法、显示装置
JP6475424B2 (ja) 2013-06-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
TWI624936B (zh) 2013-06-05 2018-05-21 半導體能源研究所股份有限公司 顯示裝置
JP6400336B2 (ja) 2013-06-05 2018-10-03 株式会社半導体エネルギー研究所 半導体装置
US9806198B2 (en) 2013-06-05 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI687748B (zh) 2013-06-05 2020-03-11 日商半導體能源研究所股份有限公司 顯示裝置及電子裝置
JP2015195327A (ja) 2013-06-05 2015-11-05 株式会社半導体エネルギー研究所 半導体装置
US9773915B2 (en) 2013-06-11 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI641112B (zh) 2013-06-13 2018-11-11 半導體能源研究所股份有限公司 半導體裝置
JP6368155B2 (ja) 2013-06-18 2018-08-01 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
US9035301B2 (en) 2013-06-19 2015-05-19 Semiconductor Energy Laboratory Co., Ltd. Imaging device
TWI652822B (zh) 2013-06-19 2019-03-01 日商半導體能源研究所股份有限公司 氧化物半導體膜及其形成方法
TWI633650B (zh) 2013-06-21 2018-08-21 半導體能源研究所股份有限公司 半導體裝置
US9515094B2 (en) 2013-06-26 2016-12-06 Semiconductor Energy Laboratory Co., Ltd. Storage device and semiconductor device
KR20210079411A (ko) 2013-06-27 2021-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TW201513128A (zh) 2013-07-05 2015-04-01 Semiconductor Energy Lab 半導體裝置
US20150008428A1 (en) 2013-07-08 2015-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9666697B2 (en) 2013-07-08 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device including an electron trap layer
JP6435124B2 (ja) 2013-07-08 2018-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9293480B2 (en) 2013-07-10 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
TWI622053B (zh) 2013-07-10 2018-04-21 半導體能源研究所股份有限公司 半導體裝置
US9006736B2 (en) 2013-07-12 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9818763B2 (en) 2013-07-12 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing display device
JP6322503B2 (ja) 2013-07-16 2018-05-09 株式会社半導体エネルギー研究所 半導体装置
JP6516978B2 (ja) 2013-07-17 2019-05-22 株式会社半導体エネルギー研究所 半導体装置
US9443592B2 (en) 2013-07-18 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9395070B2 (en) 2013-07-19 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Support of flexible component and light-emitting device
TWI608523B (zh) 2013-07-19 2017-12-11 半導體能源研究所股份有限公司 Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device
US9379138B2 (en) 2013-07-19 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device with drive voltage dependent on external light intensity
TWI632688B (zh) 2013-07-25 2018-08-11 半導體能源研究所股份有限公司 半導體裝置以及半導體裝置的製造方法
US10529740B2 (en) 2013-07-25 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including semiconductor layer and conductive layer
TWI636309B (zh) 2013-07-25 2018-09-21 日商半導體能源研究所股份有限公司 液晶顯示裝置及電子裝置
TWI641208B (zh) 2013-07-26 2018-11-11 日商半導體能源研究所股份有限公司 直流對直流轉換器
JP6410496B2 (ja) 2013-07-31 2018-10-24 株式会社半導体エネルギー研究所 マルチゲート構造のトランジスタ
US9343288B2 (en) 2013-07-31 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6460592B2 (ja) 2013-07-31 2019-01-30 株式会社半導体エネルギー研究所 Ｄｃｄｃコンバータ、及び半導体装置
TWI635750B (zh) 2013-08-02 2018-09-11 半導體能源研究所股份有限公司 攝像裝置以及其工作方法
US9496330B2 (en) 2013-08-02 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP2015053477A (ja) 2013-08-05 2015-03-19 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
JP6345023B2 (ja) 2013-08-07 2018-06-20 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US9299855B2 (en) 2013-08-09 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having dual gate insulating layers
US9601591B2 (en) 2013-08-09 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6329843B2 (ja) 2013-08-19 2018-05-23 株式会社半導体エネルギー研究所 半導体装置
US9374048B2 (en) 2013-08-20 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing device, and driving method and program thereof
US9385592B2 (en) 2013-08-21 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Charge pump circuit and semiconductor device including the same
KR102232133B1 (ko) 2013-08-22 2021-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102244553B1 (ko) 2013-08-23 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 용량 소자 및 반도체 장치
US9443987B2 (en) 2013-08-23 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI667520B (zh) 2013-08-28 2019-08-01 日商半導體能源研究所股份有限公司 顯示裝置
JP6426402B2 (ja) 2013-08-30 2018-11-21 株式会社半導体エネルギー研究所 表示装置
US9552767B2 (en) 2013-08-30 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9360564B2 (en) 2013-08-30 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Imaging device
WO2015030150A1 (en) 2013-08-30 2015-03-05 Semiconductor Energy Laboratory Co., Ltd. Storage circuit and semiconductor device
US9590109B2 (en) 2013-08-30 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6406926B2 (ja) 2013-09-04 2018-10-17 株式会社半導体エネルギー研究所 半導体装置
US9449853B2 (en) 2013-09-04 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising electron trap layer
US9607991B2 (en) 2013-09-05 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6345544B2 (ja) 2013-09-05 2018-06-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10008513B2 (en) 2013-09-05 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6401977B2 (ja) 2013-09-06 2018-10-10 株式会社半導体エネルギー研究所 半導体装置
KR102294507B1 (ko) 2013-09-06 2021-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9590110B2 (en) 2013-09-10 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Ultraviolet light sensor circuit
TWI640014B (zh) 2013-09-11 2018-11-01 半導體能源研究所股份有限公司 記憶體裝置、半導體裝置及電子裝置
US9269822B2 (en) 2013-09-12 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9893194B2 (en) 2013-09-12 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9461126B2 (en) 2013-09-13 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Transistor, clocked inverter circuit, sequential circuit, and semiconductor device including sequential circuit
JP2015079946A (ja) 2013-09-13 2015-04-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI646690B (zh) 2013-09-13 2019-01-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102448479B1 (ko) 2013-09-13 2022-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP6429540B2 (ja) 2013-09-13 2018-11-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6467171B2 (ja) 2013-09-17 2019-02-06 株式会社半導体エネルギー研究所 半導体装置
JP6347704B2 (ja) 2013-09-18 2018-06-27 株式会社半導体エネルギー研究所 半導体装置
US9269915B2 (en) 2013-09-18 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI677989B (zh) 2013-09-19 2019-11-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP2015084418A (ja) 2013-09-23 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
TWI678740B (zh) 2013-09-23 2019-12-01 日商半導體能源研究所股份有限公司 半導體裝置
JP6570817B2 (ja) 2013-09-23 2019-09-04 株式会社半導体エネルギー研究所 半導体装置
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6383616B2 (ja) 2013-09-25 2018-08-29 株式会社半導体エネルギー研究所 半導体装置
US9799774B2 (en) 2013-09-26 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Switch circuit, semiconductor device, and system
JP6392603B2 (ja) 2013-09-27 2018-09-19 株式会社半導体エネルギー研究所 半導体装置
JP6581765B2 (ja) 2013-10-02 2019-09-25 株式会社半導体エネルギー研究所 ブートストラップ回路、およびブートストラップ回路を有する半導体装置
JP6386323B2 (ja) 2013-10-04 2018-09-05 株式会社半導体エネルギー研究所 半導体装置
TW202203465A (zh) 2013-10-10 2022-01-16 日商半導體能源研究所股份有限公司 液晶顯示裝置
JP6438727B2 (ja) 2013-10-11 2018-12-19 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
JP6591739B2 (ja) 2013-10-16 2019-10-16 株式会社半導体エネルギー研究所 演算処理装置の駆動方法
TWI621127B (zh) 2013-10-18 2018-04-11 半導體能源研究所股份有限公司 運算處理裝置及其驅動方法
TWI642170B (zh) 2013-10-18 2018-11-21 半導體能源研究所股份有限公司 顯示裝置及電子裝置
WO2015060203A1 (en) 2013-10-22 2015-04-30 Semiconductor Energy Laboratory Co., Ltd. Display device
CN110571278A (zh) 2013-10-22 2019-12-13 株式会社半导体能源研究所 半导体装置
US9455349B2 (en) 2013-10-22 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor with reduced impurity diffusion
WO2015060133A1 (en) 2013-10-22 2015-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015179247A (ja) 2013-10-22 2015-10-08 株式会社半導体エネルギー研究所 表示装置
DE102014220672A1 (de) 2013-10-22 2015-05-07 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
US9276128B2 (en) 2013-10-22 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and etchant used for the same
JP6625796B2 (ja) 2013-10-25 2019-12-25 株式会社半導体エネルギー研究所 表示装置
JP6457239B2 (ja) 2013-10-31 2019-01-23 株式会社半導体エネルギー研究所 半導体装置
US9590111B2 (en) 2013-11-06 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP6478562B2 (ja) 2013-11-07 2019-03-06 株式会社半導体エネルギー研究所 半導体装置
JP6440457B2 (ja) 2013-11-07 2018-12-19 株式会社半導体エネルギー研究所 半導体装置
US9385054B2 (en) 2013-11-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing device and manufacturing method thereof
JP2015118724A (ja) 2013-11-13 2015-06-25 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の駆動方法
JP6426437B2 (ja) 2013-11-22 2018-11-21 株式会社半導体エネルギー研究所 半導体装置
JP6393590B2 (ja) 2013-11-22 2018-09-19 株式会社半導体エネルギー研究所 半導体装置
JP6486660B2 (ja) 2013-11-27 2019-03-20 株式会社半導体エネルギー研究所 表示装置
JP2016001712A (ja) 2013-11-29 2016-01-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20150155313A1 (en) 2013-11-29 2015-06-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9882014B2 (en) 2013-11-29 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102705567B1 (ko) 2013-12-02 2024-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US9601634B2 (en) 2013-12-02 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102462742B1 (ko) 2013-12-02 2022-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제조방법
US9991392B2 (en) 2013-12-03 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2016027597A (ja) 2013-12-06 2016-02-18 株式会社半導体エネルギー研究所 半導体装置
US9627413B2 (en) 2013-12-12 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US9349751B2 (en) 2013-12-12 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI642186B (zh) 2013-12-18 2018-11-21 日商半導體能源研究所股份有限公司 半導體裝置
TWI666770B (zh) 2013-12-19 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置
US9379192B2 (en) 2013-12-20 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6444714B2 (ja) 2013-12-20 2018-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102283814B1 (ko) 2013-12-25 2021-07-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20220163502A (ko) 2013-12-26 2022-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI637484B (zh) 2013-12-26 2018-10-01 日商半導體能源研究所股份有限公司 半導體裝置
JP6402017B2 (ja) 2013-12-26 2018-10-10 株式会社半導体エネルギー研究所 半導体装置
US9960280B2 (en) 2013-12-26 2018-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015097596A1 (en) 2013-12-26 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9577110B2 (en) 2013-12-27 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor and the display device including the semiconductor device
US9397149B2 (en) 2013-12-27 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6506545B2 (ja) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 半導体装置
US9472678B2 (en) 2013-12-27 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9349418B2 (en) 2013-12-27 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
JP6506961B2 (ja) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 液晶表示装置
US9318618B2 (en) 2013-12-27 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015097593A1 (en) 2013-12-27 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE112014006046T5 (de) 2013-12-27 2016-09-15 Semiconductor Energy Laboratory Co., Ltd. Licht emittierende Vorrichtung
JP6444723B2 (ja) 2014-01-09 2018-12-26 株式会社半導体エネルギー研究所 装置
US9300292B2 (en) 2014-01-10 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Circuit including transistor
US9401432B2 (en) 2014-01-16 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9379713B2 (en) 2014-01-17 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Data processing device and driving method thereof
KR102306200B1 (ko) 2014-01-24 2021-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2015114476A1 (en) 2014-01-28 2015-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9929044B2 (en) 2014-01-30 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP6523695B2 (ja) 2014-02-05 2019-06-05 株式会社半導体エネルギー研究所 半導体装置
TWI665778B (zh) 2014-02-05 2019-07-11 日商半導體能源研究所股份有限公司 半導體裝置、模組及電子裝置
US9929279B2 (en) 2014-02-05 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9443876B2 (en) 2014-02-05 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
JP6473626B2 (ja) 2014-02-06 2019-02-20 株式会社半導体エネルギー研究所 半導体装置
US10055232B2 (en) 2014-02-07 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising memory circuit
CN105960633B (zh) 2014-02-07 2020-06-19 株式会社半导体能源研究所 半导体装置、装置及电子设备
TWI685116B (zh) 2014-02-07 2020-02-11 日商半導體能源研究所股份有限公司 半導體裝置
US9479175B2 (en) 2014-02-07 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP2015165226A (ja) 2014-02-07 2015-09-17 株式会社半導体エネルギー研究所 装置
US9869716B2 (en) 2014-02-07 2018-01-16 Semiconductor Energy Laboratory Co., Ltd. Device comprising programmable logic element
TWI834556B (zh) 2014-02-11 2024-03-01 日商半導體能源研究所股份有限公司 顯示裝置及電子裝置
KR102317297B1 (ko) 2014-02-19 2021-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물, 반도체 장치, 모듈, 및 전자 장치
JP6629509B2 (ja) 2014-02-21 2020-01-15 株式会社半導体エネルギー研究所 酸化物半導体膜
JP2015172991A (ja) 2014-02-21 2015-10-01 株式会社半導体エネルギー研究所 半導体装置、電子部品、及び電子機器
US9817040B2 (en) 2014-02-21 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Measuring method of low off-state current of transistor
US10074576B2 (en) 2014-02-28 2018-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US9294096B2 (en) 2014-02-28 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9564535B2 (en) 2014-02-28 2017-02-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module
KR102329066B1 (ko) 2014-02-28 2021-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법, 및 전자 기기
CN112233982A (zh) 2014-02-28 2021-01-15 株式会社半导体能源研究所 半导体装置的制造方法
JP6474280B2 (ja) 2014-03-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
KR20150104518A (ko) 2014-03-05 2015-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레벨 시프터 회로
US9537478B2 (en) 2014-03-06 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9397637B2 (en) 2014-03-06 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Voltage controlled oscillator, semiconductor device, and electronic device
US10096489B2 (en) 2014-03-06 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6625328B2 (ja) 2014-03-06 2019-12-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
KR102267237B1 (ko) 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US9419622B2 (en) 2014-03-07 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015132694A1 (en) 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Touch sensor, touch panel, and manufacturing method of touch panel
JP6442321B2 (ja) 2014-03-07 2018-12-19 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法、並びに電子機器
US9711536B2 (en) 2014-03-07 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
JP6585354B2 (ja) 2014-03-07 2019-10-02 株式会社半導体エネルギー研究所 半導体装置
WO2015132697A1 (en) 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9443872B2 (en) 2014-03-07 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9653611B2 (en) 2014-03-07 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20160132405A (ko) 2014-03-12 2016-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9324747B2 (en) 2014-03-13 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Imaging device
JP6541376B2 (ja) 2014-03-13 2019-07-10 株式会社半導体エネルギー研究所 プログラマブルロジックデバイスの動作方法
TWI660490B (zh) 2014-03-13 2019-05-21 日商半導體能源研究所股份有限公司 攝像裝置
US9640669B2 (en) 2014-03-13 2017-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module
JP6525421B2 (ja) 2014-03-13 2019-06-05 株式会社半導体エネルギー研究所 半導体装置
JP6560508B2 (ja) 2014-03-13 2019-08-14 株式会社半導体エネルギー研究所 半導体装置
JP6677449B2 (ja) 2014-03-13 2020-04-08 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP2015188071A (ja) 2014-03-14 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
KR102252213B1 (ko) 2014-03-14 2021-05-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 회로 시스템
US10361290B2 (en) 2014-03-14 2019-07-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising adding oxygen to buffer film and insulating film
US9299848B2 (en) 2014-03-14 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, RF tag, and electronic device
US9887212B2 (en) 2014-03-14 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2015140656A1 (en) 2014-03-18 2015-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6509596B2 (ja) 2014-03-18 2019-05-08 株式会社半導体エネルギー研究所 半導体装置
US9842842B2 (en) 2014-03-19 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device and electronic device having the same
US9887291B2 (en) 2014-03-19 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, or the display module
JP6495698B2 (ja) 2014-03-20 2019-04-03 株式会社半導体エネルギー研究所 半導体装置、電子部品、及び電子機器
TWI657488B (zh) 2014-03-20 2019-04-21 日商半導體能源研究所股份有限公司 半導體裝置、具有該半導體裝置的顯示裝置、具有該顯示裝置的顯示模組以及具有該半導體裝置、該顯示裝置和該顯示模組的電子裝置
KR102400212B1 (ko) 2014-03-28 2022-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터 및 반도체 장치
JP6487738B2 (ja) 2014-03-31 2019-03-20 株式会社半導体エネルギー研究所 半導体装置、電子部品
TWI767772B (zh) 2014-04-10 2022-06-11 日商半導體能源研究所股份有限公司 記憶體裝置及半導體裝置
JP6541398B2 (ja) 2014-04-11 2019-07-10 株式会社半導体エネルギー研究所 半導体装置
JP6635670B2 (ja) 2014-04-11 2020-01-29 株式会社半導体エネルギー研究所 半導体装置
TWI646782B (zh) 2014-04-11 2019-01-01 日商半導體能源研究所股份有限公司 保持電路、保持電路的驅動方法以及包括保持電路的半導體裝置
US9674470B2 (en) 2014-04-11 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and method for driving electronic device
KR102511325B1 (ko) 2014-04-18 2023-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 동작 방법
KR20160144492A (ko) 2014-04-18 2016-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 장치
WO2015159183A2 (en) 2014-04-18 2015-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device having the same
JP6613044B2 (ja) 2014-04-22 2019-11-27 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
KR102380829B1 (ko) 2014-04-23 2022-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
KR102330412B1 (ko) 2014-04-25 2021-11-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
TWI643457B (zh) 2014-04-25 2018-12-01 日商半導體能源研究所股份有限公司 半導體裝置
US9780226B2 (en) 2014-04-25 2017-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6468686B2 (ja) 2014-04-25 2019-02-13 株式会社半導体エネルギー研究所 入出力装置
US10043913B2 (en) 2014-04-30 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor device, display device, module, and electronic device
TWI679624B (zh) 2014-05-02 2019-12-11 日商半導體能源研究所股份有限公司 半導體裝置
US10656799B2 (en) 2014-05-02 2020-05-19 Semiconductor Energy Laboratory Co., Ltd. Display device and operation method thereof
JP6537341B2 (ja) 2014-05-07 2019-07-03 株式会社半導体エネルギー研究所 半導体装置
JP6722980B2 (ja) 2014-05-09 2020-07-15 株式会社半導体エネルギー研究所 表示装置および発光装置、並びに電子機器
JP6653997B2 (ja) 2014-05-09 2020-02-26 株式会社半導体エネルギー研究所 表示補正回路及び表示装置
KR102333604B1 (ko) 2014-05-15 2021-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이 반도체 장치를 포함하는 표시 장치
JP2015233130A (ja) 2014-05-16 2015-12-24 株式会社半導体エネルギー研究所 半導体基板および半導体装置の作製方法
JP6612056B2 (ja) 2014-05-16 2019-11-27 株式会社半導体エネルギー研究所 撮像装置、及び監視装置
JP6580863B2 (ja) 2014-05-22 2019-09-25 株式会社半導体エネルギー研究所 半導体装置、健康管理システム
TWI672804B (zh) 2014-05-23 2019-09-21 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
JP6616102B2 (ja) 2014-05-23 2019-12-04 株式会社半導体エネルギー研究所 記憶装置及び電子機器
DE112015002491T5 (de) * 2014-05-27 2017-03-02 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und Herstellungsverfahren dafür
US10020403B2 (en) 2014-05-27 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9874775B2 (en) 2014-05-28 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
KR102418666B1 (ko) 2014-05-29 2022-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 소자, 전자 기기, 촬상 소자의 구동 방법, 및 전자 기기의 구동 방법
JP6615490B2 (ja) 2014-05-29 2019-12-04 株式会社半導体エネルギー研究所 半導体装置及び電子機器
JP6653129B2 (ja) 2014-05-29 2020-02-26 株式会社半導体エネルギー研究所 記憶装置
JP6525722B2 (ja) 2014-05-29 2019-06-05 株式会社半導体エネルギー研究所 記憶装置、電子部品、及び電子機器
KR20150138026A (ko) 2014-05-29 2015-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9831238B2 (en) 2014-05-30 2017-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including insulating film having opening portion and conductive film in the opening portion
DE112014006711B4 (de) 2014-05-30 2021-01-21 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung, Herstellungsverfahren dafür und elektronische Vorrichtung
KR102373263B1 (ko) 2014-05-30 2022-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 제조하기 위한 방법
TWI646658B (zh) 2014-05-30 2019-01-01 日商半導體能源研究所股份有限公司 半導體裝置
TWI663726B (zh) 2014-05-30 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置、模組及電子裝置
JP6538426B2 (ja) 2014-05-30 2019-07-03 株式会社半導体エネルギー研究所 半導体装置及び電子機器
JP6537892B2 (ja) 2014-05-30 2019-07-03 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
KR102344782B1 (ko) 2014-06-13 2021-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 입력 장치 및 입출력 장치
JP2016015475A (ja) 2014-06-13 2016-01-28 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
WO2015189731A1 (en) 2014-06-13 2015-12-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the semiconductor device
TWI663733B (zh) 2014-06-18 2019-06-21 日商半導體能源研究所股份有限公司 電晶體及半導體裝置
TWI666776B (zh) 2014-06-20 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置以及包括該半導體裝置的顯示裝置
KR20150146409A (ko) 2014-06-20 2015-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치, 입출력 장치, 및 전자 기기
US9722090B2 (en) 2014-06-23 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including first gate oxide semiconductor film, and second gate
JP6545541B2 (ja) 2014-06-25 2019-07-17 株式会社半導体エネルギー研究所 撮像装置、監視装置、及び電子機器
US10002971B2 (en) 2014-07-03 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
US9647129B2 (en) 2014-07-04 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9461179B2 (en) 2014-07-11 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor device (TFT) comprising stacked oxide semiconductor layers and having a surrounded channel structure
CN106537604B (zh) 2014-07-15 2020-09-11 株式会社半导体能源研究所 半导体装置及其制造方法以及包括该半导体装置的显示装置
JP2016029795A (ja) 2014-07-18 2016-03-03 株式会社半導体エネルギー研究所 半導体装置、撮像装置及び電子機器
JP6581825B2 (ja) 2014-07-18 2019-09-25 株式会社半導体エネルギー研究所 表示システム
US9312280B2 (en) 2014-07-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102352633B1 (ko) 2014-07-25 2022-01-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발진 회로 및 그것을 포함하는 반도체 장치
US10115830B2 (en) 2014-07-29 2018-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
JP6555956B2 (ja) 2014-07-31 2019-08-07 株式会社半導体エネルギー研究所 撮像装置、監視装置、及び電子機器
KR102533396B1 (ko) 2014-07-31 2023-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 장치
US9705004B2 (en) 2014-08-01 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6652342B2 (ja) 2014-08-08 2020-02-19 株式会社半導体エネルギー研究所 半導体装置
JP6553444B2 (ja) 2014-08-08 2019-07-31 株式会社半導体エネルギー研究所 半導体装置
JP6739150B2 (ja) 2014-08-08 2020-08-12 株式会社半導体エネルギー研究所 半導体装置、発振回路、位相同期回路及び電子機器
US10147747B2 (en) 2014-08-21 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
US10032888B2 (en) 2014-08-22 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and electronic appliance having semiconductor device
US10559667B2 (en) 2014-08-25 2020-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for measuring current of semiconductor device
KR102388997B1 (ko) 2014-08-29 2022-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 전자 기기
WO2016034983A1 (en) 2014-09-02 2016-03-10 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
KR102329498B1 (ko) 2014-09-04 2021-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TW201614626A (en) 2014-09-05 2016-04-16 Semiconductor Energy Lab Display device and electronic device
US9766517B2 (en) 2014-09-05 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Display device and display module
JP6676316B2 (ja) 2014-09-12 2020-04-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9722091B2 (en) 2014-09-12 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2016066788A (ja) 2014-09-19 2016-04-28 株式会社半導体エネルギー研究所 半導体膜の評価方法および半導体装置の作製方法
KR20160034200A (ko) 2014-09-19 2016-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
DE112015004272T5 (de) 2014-09-19 2017-06-01 Semiconductor Energy Laboratory Co., Ltd. Herstellungsverfahren der Halbleitervorrichtung
US9401364B2 (en) 2014-09-19 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US10071904B2 (en) 2014-09-25 2018-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
US10141342B2 (en) 2014-09-26 2018-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
WO2016046685A1 (en) 2014-09-26 2016-03-31 Semiconductor Energy Laboratory Co., Ltd. Imaging device
JP2016111677A (ja) 2014-09-26 2016-06-20 株式会社半導体エネルギー研究所 半導体装置、無線センサ、及び電子機器
US10170055B2 (en) 2014-09-26 2019-01-01 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
US9450581B2 (en) 2014-09-30 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, semiconductor device, electronic component, and electronic device
WO2016055894A1 (en) 2014-10-06 2016-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9698170B2 (en) 2014-10-07 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
KR102727602B1 (ko) 2014-10-10 2024-11-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로, 처리 유닛, 전자 부품, 전자 기기, 및 반도체 장치
WO2016055903A1 (en) 2014-10-10 2016-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
US9991393B2 (en) 2014-10-16 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, module, and electronic device
JP6645793B2 (ja) 2014-10-17 2020-02-14 株式会社半導体エネルギー研究所 半導体装置
WO2016063159A1 (en) 2014-10-20 2016-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof, module, and electronic device
US10068927B2 (en) 2014-10-23 2018-09-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
JP6615565B2 (ja) 2014-10-24 2019-12-04 株式会社半導体エネルギー研究所 半導体装置
US9704704B2 (en) 2014-10-28 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
TWI652362B (zh) 2014-10-28 2019-03-01 日商半導體能源研究所股份有限公司 氧化物及其製造方法
CN107111970B (zh) 2014-10-28 2021-08-13 株式会社半导体能源研究所 显示装置、显示装置的制造方法及电子设备
US9793905B2 (en) 2014-10-31 2017-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10680017B2 (en) 2014-11-07 2020-06-09 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element including EL layer, electrode which has high reflectance and a high work function, display device, electronic device, and lighting device
US9584707B2 (en) 2014-11-10 2017-02-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US9548327B2 (en) 2014-11-10 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Imaging device having a selenium containing photoelectric conversion layer
TWI711165B (zh) 2014-11-21 2020-11-21 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
JP6563313B2 (ja) 2014-11-21 2019-08-21 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
TWI766298B (zh) 2014-11-21 2022-06-01 日商半導體能源研究所股份有限公司 半導體裝置
US9438234B2 (en) 2014-11-21 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device including logic circuit
KR102799986B1 (ko) 2014-11-28 2025-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 모듈, 및 전자 기기
JP6647841B2 (ja) 2014-12-01 2020-02-14 株式会社半導体エネルギー研究所 酸化物の作製方法
US20160155849A1 (en) 2014-12-02 2016-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, module, and electronic device
JP6667267B2 (ja) 2014-12-08 2020-03-18 株式会社半導体エネルギー研究所 半導体装置
US9768317B2 (en) 2014-12-08 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method of semiconductor device, and electronic device
JP6689062B2 (ja) 2014-12-10 2020-04-28 株式会社半導体エネルギー研究所 半導体装置
CN107004722A (zh) 2014-12-10 2017-08-01 株式会社半导体能源研究所 半导体装置及其制造方法
JP6833315B2 (ja) 2014-12-10 2021-02-24 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US9773832B2 (en) 2014-12-10 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2016092416A1 (en) 2014-12-11 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and electronic device
JP6676354B2 (ja) 2014-12-16 2020-04-08 株式会社半導体エネルギー研究所 半導体装置
JP2016116220A (ja) 2014-12-16 2016-06-23 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
TWI791952B (zh) 2014-12-18 2023-02-11 日商半導體能源研究所股份有限公司 半導體裝置、感測裝置和電子裝置
KR20170101233A (ko) 2014-12-26 2017-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링용 타깃의 제작 방법
TWI686874B (zh) 2014-12-26 2020-03-01 日商半導體能源研究所股份有限公司 半導體裝置、顯示裝置、顯示模組、電子裝置、氧化物及氧化物的製造方法
US10396210B2 (en) 2014-12-26 2019-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with stacked metal oxide and oxide semiconductor layers and display device including the semiconductor device
CN107111985B (zh) 2014-12-29 2020-09-18 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
US10522693B2 (en) 2015-01-16 2019-12-31 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
US9954112B2 (en) 2015-01-26 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9812587B2 (en) 2015-01-26 2017-11-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9443564B2 (en) 2015-01-26 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US9647132B2 (en) 2015-01-30 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
TWI710124B (zh) 2015-01-30 2020-11-11 日商半導體能源研究所股份有限公司 成像裝置及電子裝置
CN107207252B (zh) 2015-02-02 2021-04-30 株式会社半导体能源研究所 氧化物及其制造方法
WO2016125051A1 (en) 2015-02-04 2016-08-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9660100B2 (en) 2015-02-06 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI732383B (zh) 2015-02-06 2021-07-01 日商半導體能源研究所股份有限公司 裝置及其製造方法以及電子裝置
JP6674269B2 (ja) 2015-02-09 2020-04-01 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP6717604B2 (ja) 2015-02-09 2020-07-01 株式会社半導体エネルギー研究所 半導体装置、中央処理装置及び電子機器
TWI685113B (zh) 2015-02-11 2020-02-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US10439068B2 (en) 2015-02-12 2019-10-08 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9818880B2 (en) 2015-02-12 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP2016154225A (ja) 2015-02-12 2016-08-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP6758844B2 (ja) 2015-02-13 2020-09-23 株式会社半導体エネルギー研究所 表示装置
US9489988B2 (en) 2015-02-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Memory device
US10403646B2 (en) 2015-02-20 2019-09-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9991394B2 (en) 2015-02-20 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
JP6711642B2 (ja) 2015-02-25 2020-06-17 株式会社半導体エネルギー研究所 半導体装置
JP6739185B2 (ja) 2015-02-26 2020-08-12 株式会社半導体エネルギー研究所 ストレージシステム、およびストレージ制御回路
US9653613B2 (en) 2015-02-27 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9685560B2 (en) 2015-03-02 2017-06-20 Semiconductor Energy Laboratory Co., Ltd. Transistor, method for manufacturing transistor, semiconductor device, and electronic device
CN107408579B (zh) 2015-03-03 2021-04-02 株式会社半导体能源研究所 半导体装置、该半导体装置的制造方法或包括该半导体装置的显示装置
KR102526654B1 (ko) 2015-03-03 2023-04-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막, 상기 산화물 반도체막을 포함하는 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치
TWI718125B (zh) 2015-03-03 2021-02-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP6681117B2 (ja) 2015-03-13 2020-04-15 株式会社半導体エネルギー研究所 半導体装置
US9882061B2 (en) 2015-03-17 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102560862B1 (ko) 2015-03-17 2023-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 터치 패널
US10008609B2 (en) 2015-03-17 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, or display device including the same
US9964799B2 (en) 2015-03-17 2018-05-08 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, and electronic device
JP2016177280A (ja) 2015-03-18 2016-10-06 株式会社半導体エネルギー研究所 表示装置および電子機器、並びに表示装置の駆動方法
KR102582523B1 (ko) 2015-03-19 2023-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US10147823B2 (en) 2015-03-19 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6662665B2 (ja) 2015-03-19 2020-03-11 株式会社半導体エネルギー研究所 液晶表示装置及び該液晶表示装置を用いた電子機器
KR20160114511A (ko) 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP6688116B2 (ja) 2015-03-24 2020-04-28 株式会社半導体エネルギー研究所 撮像装置および電子機器
US9842938B2 (en) 2015-03-24 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including semiconductor device
US10096715B2 (en) 2015-03-26 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and electronic device
US10429704B2 (en) 2015-03-26 2019-10-01 Semiconductor Energy Laboratory Co., Ltd. Display device, display module including the display device, and electronic device including the display device or the display module
US9806200B2 (en) 2015-03-27 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6736321B2 (ja) 2015-03-27 2020-08-05 株式会社半導体エネルギー研究所 半導体装置の製造方法
TWI695513B (zh) 2015-03-27 2020-06-01 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
TWI777164B (zh) 2015-03-30 2022-09-11 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
US9716852B2 (en) 2015-04-03 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Broadcast system
US10389961B2 (en) 2015-04-09 2019-08-20 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
KR102788207B1 (ko) 2015-04-13 2025-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10372274B2 (en) 2015-04-13 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and touch panel
US10056497B2 (en) 2015-04-15 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10460984B2 (en) 2015-04-15 2019-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating electrode and semiconductor device
US9916791B2 (en) 2015-04-16 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Display device, electronic device, and method for driving display device
US10192995B2 (en) 2015-04-28 2019-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10002970B2 (en) 2015-04-30 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method of the same, or display device including the same
KR102549926B1 (ko) 2015-05-04 2023-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 반도체 장치의 제작 방법, 및 전자기기
US10671204B2 (en) 2015-05-04 2020-06-02 Semiconductor Energy Laboratory Co., Ltd. Touch panel and data processor
JP6681780B2 (ja) 2015-05-07 2020-04-15 株式会社半導体エネルギー研究所 表示システムおよび電子機器
TWI693719B (zh) 2015-05-11 2020-05-11 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
DE102016207737A1 (de) 2015-05-11 2016-11-17 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung, Verfahren zum Herstellen der Halbleitervorrichtung, Reifen und beweglicher Gegenstand
JP6935171B2 (ja) 2015-05-14 2021-09-15 株式会社半導体エネルギー研究所 半導体装置
US11728356B2 (en) 2015-05-14 2023-08-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion element and imaging device
US9627034B2 (en) 2015-05-15 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Electronic device
US9837547B2 (en) 2015-05-22 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide conductor and display device including the semiconductor device
KR20180010205A (ko) 2015-05-22 2018-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치
JP2016225614A (ja) 2015-05-26 2016-12-28 株式会社半導体エネルギー研究所 半導体装置
JP6773453B2 (ja) 2015-05-26 2020-10-21 株式会社半導体エネルギー研究所 記憶装置及び電子機器
US10139663B2 (en) 2015-05-29 2018-11-27 Semiconductor Energy Laboratory Co., Ltd. Input/output device and electronic device
KR102553553B1 (ko) 2015-06-12 2023-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치, 및 그 동작 방법 및 전자 기기
KR102593883B1 (ko) 2015-06-19 2023-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 그 제작 방법, 및 전자 기기
US9860465B2 (en) 2015-06-23 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US9935633B2 (en) 2015-06-30 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, semiconductor device, electronic component, and electronic device
US10290573B2 (en) 2015-07-02 2019-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9917209B2 (en) 2015-07-03 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including step of forming trench over semiconductor
KR102548001B1 (ko) 2015-07-08 2023-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2017022377A (ja) 2015-07-14 2017-01-26 株式会社半導体エネルギー研究所 半導体装置
US10501003B2 (en) 2015-07-17 2019-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, lighting device, and vehicle
US10985278B2 (en) 2015-07-21 2021-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10978489B2 (en) 2015-07-24 2021-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display panel, method for manufacturing semiconductor device, method for manufacturing display panel, and information processing device
US11024725B2 (en) 2015-07-24 2021-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including metal oxide film
US11189736B2 (en) 2015-07-24 2021-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10424671B2 (en) 2015-07-29 2019-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
US9825177B2 (en) 2015-07-30 2017-11-21 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a semiconductor device using multiple etching mask
US10585506B2 (en) 2015-07-30 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Display device with high visibility regardless of illuminance of external light
CN106409919A (zh) 2015-07-30 2017-02-15 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
US10019025B2 (en) 2015-07-30 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9876946B2 (en) 2015-08-03 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US9911861B2 (en) 2015-08-03 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method of the same, and electronic device
JP6791661B2 (ja) 2015-08-07 2020-11-25 株式会社半導体エネルギー研究所 表示パネル
US9893202B2 (en) 2015-08-19 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP2017041877A (ja) 2015-08-21 2017-02-23 株式会社半導体エネルギー研究所 半導体装置、電子部品、および電子機器
US9666606B2 (en) 2015-08-21 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9773919B2 (en) 2015-08-26 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2017037564A1 (en) 2015-08-28 2017-03-09 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor, transistor, and semiconductor device
US9911756B2 (en) 2015-08-31 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor and electronic device surrounded by layer having assigned band gap to prevent electrostatic discharge damage
JP2017050537A (ja) 2015-08-31 2017-03-09 株式会社半導体エネルギー研究所 半導体装置
JP6807683B2 (ja) 2015-09-11 2021-01-06 株式会社半導体エネルギー研究所 入出力パネル
SG10201607278TA (en) 2015-09-18 2017-04-27 Semiconductor Energy Lab Co Ltd Semiconductor device and electronic device
JP2017063420A (ja) 2015-09-25 2017-03-30 株式会社半導体エネルギー研究所 半導体装置
US9935143B2 (en) 2015-09-30 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2017064587A1 (en) 2015-10-12 2017-04-20 Semiconductor Energy Laboratory Co., Ltd. Display panel, input/output device, data processor, and method for manufacturing display panel
WO2017064590A1 (en) 2015-10-12 2017-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9852926B2 (en) 2015-10-20 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device
US20170118479A1 (en) 2015-10-23 2017-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR102477518B1 (ko) 2015-10-23 2022-12-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US10007161B2 (en) 2015-10-26 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Display device
SG10201608814YA (en) 2015-10-29 2017-05-30 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the semiconductor device
US9773787B2 (en) 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
US9741400B2 (en) 2015-11-05 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, and method for operating the semiconductor device
JP6796461B2 (ja) 2015-11-18 2020-12-09 株式会社半導体エネルギー研究所 半導体装置、コンピュータ及び電子機器
JP2018032839A (ja) 2015-12-11 2018-03-01 株式会社半導体エネルギー研究所 トランジスタ、回路、半導体装置、表示装置および電子機器
JP6887243B2 (ja) 2015-12-11 2021-06-16 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、電子機器及び半導ウエハ
JP2017112374A (ja) 2015-12-16 2017-06-22 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、および電子機器
KR20180095836A (ko) 2015-12-18 2018-08-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 상기 반도체 장치를 포함한 표시 장치
US10177142B2 (en) 2015-12-25 2019-01-08 Semiconductor Energy Laboratory Co., Ltd. Circuit, logic circuit, processor, electronic component, and electronic device
WO2017115214A1 (en) 2015-12-28 2017-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP2017135698A (ja) 2015-12-29 2017-08-03 株式会社半導体エネルギー研究所 半導体装置、コンピュータ及び電子機器
CN113105213A (zh) 2015-12-29 2021-07-13 株式会社半导体能源研究所 金属氧化物膜以及半导体装置
JP6851814B2 (ja) 2015-12-29 2021-03-31 株式会社半導体エネルギー研究所 トランジスタ
US10580798B2 (en) 2016-01-15 2020-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN108474106B (zh) 2016-01-18 2021-02-26 株式会社半导体能源研究所 金属氧化物膜、半导体装置以及显示装置
US9905657B2 (en) 2016-01-20 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9887010B2 (en) 2016-01-21 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and driving method thereof
US10411013B2 (en) 2016-01-22 2019-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
US10700212B2 (en) 2016-01-28 2020-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof
US10115741B2 (en) 2016-02-05 2018-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10250247B2 (en) 2016-02-10 2019-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
WO2017137869A1 (en) 2016-02-12 2017-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP6970511B2 (ja) 2016-02-12 2021-11-24 株式会社半導体エネルギー研究所 トランジスタ
US9954003B2 (en) 2016-02-17 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2017149428A1 (en) 2016-03-04 2017-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device including the semiconductor device
WO2017149413A1 (en) 2016-03-04 2017-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10263114B2 (en) 2016-03-04 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, or display device including the same
JP6904730B2 (ja) 2016-03-08 2021-07-21 株式会社半導体エネルギー研究所 撮像装置
US9882064B2 (en) 2016-03-10 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Transistor and electronic device
US10096720B2 (en) 2016-03-25 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
JP6668455B2 (ja) 2016-04-01 2020-03-18 株式会社半導体エネルギー研究所 酸化物半導体膜の作製方法
CN109074296B (zh) 2016-04-15 2023-09-12 株式会社半导体能源研究所 半导体装置、电子构件及电子设备
US10236875B2 (en) 2016-04-15 2019-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for operating the semiconductor device
KR102492209B1 (ko) 2016-05-19 2023-01-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 복합 산화물 반도체 및 트랜지스터
WO2017208119A1 (en) 2016-06-03 2017-12-07 Semiconductor Energy Laboratory Co., Ltd. Metal oxide and field-effect transistor
KR102330605B1 (ko) 2016-06-22 2021-11-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10411003B2 (en) 2016-10-14 2019-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN108109592B (zh) 2016-11-25 2022-01-25 株式会社半导体能源研究所 显示装置及其工作方法
US11545581B2 (en) * 2019-08-02 2023-01-03 South China University Of Technology Metal oxide (MO) semiconductor and thin-film transistor and application thereof
KR20200033868A (ko) 2017-07-31 2020-03-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP6782211B2 (ja) * 2017-09-08 2020-11-11 株式会社東芝 透明電極、それを用いた素子、および素子の製造方法
US10808314B2 (en) * 2017-09-28 2020-10-20 Sharp Kabushiki Kaisha Vapor deposition mask and method for manufacturing vapor deposition mask
KR102605008B1 (ko) 2018-01-24 2023-11-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
US11209877B2 (en) 2018-03-16 2021-12-28 Semiconductor Energy Laboratory Co., Ltd. Electrical module, display panel, display device, input/output device, data processing device, and method of manufacturing electrical module
JPWO2020012276A1 (ja) 2018-07-09 2021-08-12 株式会社半導体エネルギー研究所 半導体装置
US11990778B2 (en) 2018-07-10 2024-05-21 Semiconductor Energy Laboratory Co., Ltd. Secondary battery protection circuit and secondary battery anomaly detection system
CN108766269B (zh) * 2018-07-27 2024-07-30 广州市建研零碳新材料科技有限公司 透明显示基板、透明显示屏及其制作方法
CN208848908U (zh) * 2018-09-13 2019-05-10 惠科股份有限公司 一种阵列基板及显示面板
CN113016090A (zh) 2018-11-02 2021-06-22 株式会社半导体能源研究所 半导体装置
JP7345497B2 (ja) 2018-11-22 2023-09-15 株式会社半導体エネルギー研究所 電池パック
KR20210119963A (ko) 2018-12-20 2021-10-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전지 팩
JP2022518352A (ja) * 2019-02-05 2022-03-15 フェイスブック・テクノロジーズ・リミテッド・ライアビリティ・カンパニー ハイブリッドｔｆｔベースのマイクロディスプレイプロジェクタに関するプロセスフロー
JP7528063B2 (ja) 2019-04-26 2024-08-05 株式会社半導体エネルギー研究所 半導体装置および電子機器
KR20220006541A (ko) 2019-05-10 2022-01-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
GB2587793B (en) 2019-08-21 2023-03-22 Pragmatic Printing Ltd Electronic circuit comprising transistor and resistor
GB2610886B (en) 2019-08-21 2023-09-13 Pragmatic Printing Ltd Resistor geometry
US12456533B2 (en) 2022-08-23 2025-10-28 Beijing Boe Technology Development Co., Ltd. Shift register and driving method therefor, and display substrate and display apparatus

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL282170A (enExample) 1961-08-17
US5625199A (en) 1996-01-16 1997-04-29 Lucent Technologies Inc. Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
US6316278B1 (en) * 1999-03-16 2001-11-13 Alien Technology Corporation Methods for fabricating a multiple modular assembly
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP2003050405A (ja) * 2000-11-15 2003-02-21 Matsushita Electric Ind Co Ltd 薄膜トランジスタアレイ、その製造方法およびそれを用いた表示パネル
JP2003037268A (ja) * 2001-07-24 2003-02-07 Minolta Co Ltd 半導体素子及びその製造方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
US6844673B1 (en) * 2001-12-06 2005-01-18 Alien Technology Corporation Split-fabrication for light emitting display structures
US6821348B2 (en) 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
US6897164B2 (en) 2002-02-14 2005-05-24 3M Innovative Properties Company Aperture masks for circuit fabrication
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
US7189992B2 (en) 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
KR100432651B1 (ko) 2002-06-18 2004-05-22 삼성에스디아이 주식회사 화상 표시 장치
US20030234392A1 (en) * 2002-06-25 2003-12-25 Nein-Hui Kung Active matrix organic light emitting diode display pixel structure
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
US20040110326A1 (en) * 2002-11-20 2004-06-10 Charles Forbes Active matrix thin film transistor array backplane
US7250930B2 (en) * 2003-02-07 2007-07-31 Hewlett-Packard Development Company, L.P. Transparent active-matrix display

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