JP2013049924A5 - - Google Patents

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JP2013049924A5
JP2013049924A5 JP2012228708A JP2012228708A JP2013049924A5 JP 2013049924 A5 JP2013049924 A5 JP 2013049924A5 JP 2012228708 A JP2012228708 A JP 2012228708A JP 2012228708 A JP2012228708 A JP 2012228708A JP 2013049924 A5 JP2013049924 A5 JP 2013049924A5
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substrate
vapor deposition
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JP2013049924A (ja
JP5604495B2 (ja
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JP2012228708A 2005-02-18 2012-10-16 蒸着装置 Expired - Fee Related JP5604495B2 (ja)

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JP2012228708A JP5604495B2 (ja) 2005-02-18 2012-10-16 蒸着装置

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JP2005043102 2005-02-18
JP2005043102 2005-02-18
JP2012228708A JP5604495B2 (ja) 2005-02-18 2012-10-16 蒸着装置

Related Parent Applications (1)

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JP2011060737A Division JP2011134723A (ja) 2005-02-18 2011-03-18 蒸着装置及びｅｌ素子の作製方法

Related Child Applications (1)

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JP2013260303A Division JP5700872B2 (ja) 2005-02-18 2013-12-17 発光装置

Publications (3)

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JP2013049924A JP2013049924A (ja) 2013-03-14
JP2013049924A5 true JP2013049924A5 (enExample) 2014-02-06
JP5604495B2 JP5604495B2 (ja) 2014-10-08

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JP2011060737A Withdrawn JP2011134723A (ja) 2005-02-18 2011-03-18 蒸着装置及びｅｌ素子の作製方法
JP2012228708A Expired - Fee Related JP5604495B2 (ja) 2005-02-18 2012-10-16 蒸着装置
JP2013155678A Expired - Fee Related JP5844776B2 (ja) 2005-02-18 2013-07-26 装置
JP2013260303A Expired - Fee Related JP5700872B2 (ja) 2005-02-18 2013-12-17 発光装置

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JP2011060737A Withdrawn JP2011134723A (ja) 2005-02-18 2011-03-18 蒸着装置及びｅｌ素子の作製方法

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JP2013155678A Expired - Fee Related JP5844776B2 (ja) 2005-02-18 2013-07-26 装置
JP2013260303A Expired - Fee Related JP5700872B2 (ja) 2005-02-18 2013-12-17 発光装置

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US (3) US7948171B2 (enExample)
JP (4) JP2011134723A (enExample)
KR (6) KR101315197B1 (enExample)
CN (2) CN101499477B (enExample)
TW (5) TWI554147B (enExample)

Families Citing this family (1865)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006164708A (ja) 2004-12-06 2006-06-22 Semiconductor Energy Lab Co Ltd 電子機器および発光装置
TWI472037B (zh) * 2005-01-28 2015-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI569441B (zh) 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7851989B2 (en) * 2005-03-25 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US8030643B2 (en) 2005-03-28 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method the same
US7928938B2 (en) 2005-04-19 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory circuit, display device and electronic apparatus
US8629819B2 (en) 2005-07-14 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
EP1758072A3 (en) * 2005-08-24 2007-05-02 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
EP1998373A3 (en) * 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
WO2007058329A1 (en) * 2005-11-15 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP1843194A1 (en) 2006-04-06 2007-10-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, semiconductor device, and electronic appliance
US20070290604A1 (en) * 2006-06-16 2007-12-20 Matsushita Electric Industrial Co., Ltd. Organic electroluminescent device and method of producing the same
JP5116277B2 (ja) 2006-09-29 2013-01-09 株式会社半導体エネルギー研究所 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器
TWI442368B (zh) 2006-10-26 2014-06-21 Semiconductor Energy Lab 電子裝置，顯示裝置，和半導體裝置，以及其驅動方法
US7646015B2 (en) * 2006-10-31 2010-01-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
DE102007024153A1 (de) * 2007-04-23 2008-10-30 Osram Opto Semiconductors Gmbh Elektrisches organisches Bauelement und Verfahren zu seiner Herstellung
JP5542297B2 (ja) 2007-05-17 2014-07-09 株式会社半導体エネルギー研究所 液晶表示装置、表示モジュール及び電子機器
JP5542296B2 (ja) 2007-05-17 2014-07-09 株式会社半導体エネルギー研究所 液晶表示装置、表示モジュール及び電子機器
JP4989309B2 (ja) 2007-05-18 2012-08-01 株式会社半導体エネルギー研究所 液晶表示装置
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
WO2009014155A1 (en) 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
KR101383490B1 (ko) * 2007-09-21 2014-04-08 엘지디스플레이 주식회사 전계발광소자
JP5169195B2 (ja) * 2007-12-14 2013-03-27 セイコーエプソン株式会社 有機ｅｌ装置、電子機器
JP2009170200A (ja) * 2008-01-15 2009-07-30 Sony Corp 表示装置の製造方法
NO332409B1 (no) * 2008-01-24 2012-09-17 Well Technology As Anordning og fremgangsmate for a isolere en seksjon av et bronnhull
CN101521219B (zh) * 2008-02-28 2013-02-13 统宝光电股份有限公司 有机电激发光显示器及其制造方法
US9041202B2 (en) 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
KR101415794B1 (ko) * 2008-06-12 2014-07-11 삼성디스플레이 주식회사 유기전계 발광 표시장치 및 그 제조방법
US8383202B2 (en) 2008-06-13 2013-02-26 Kateeva, Inc. Method and apparatus for load-locked printing
US12018857B2 (en) 2008-06-13 2024-06-25 Kateeva, Inc. Gas enclosure assembly and system
US12064979B2 (en) 2008-06-13 2024-08-20 Kateeva, Inc. Low-particle gas enclosure systems and methods
US8314765B2 (en) 2008-06-17 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device, and electronic device
KR20100001597A (ko) * 2008-06-27 2010-01-06 삼성전자주식회사 표시 장치와 그 제조 방법
KR102112799B1 (ko) 2008-07-10 2020-05-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 및 전자기기
TWI875442B (zh) 2008-07-31 2025-03-01 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
JP2010056541A (ja) 2008-07-31 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP5616038B2 (ja) * 2008-07-31 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI495108B (zh) 2008-07-31 2015-08-01 Semiconductor Energy Lab 半導體裝置的製造方法
TWI500159B (zh) * 2008-07-31 2015-09-11 Semiconductor Energy Lab 半導體裝置和其製造方法
TWI642113B (zh) 2008-08-08 2018-11-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP5480554B2 (ja) 2008-08-08 2014-04-23 株式会社半導体エネルギー研究所 半導体装置
JP5525778B2 (ja) 2008-08-08 2014-06-18 株式会社半導体エネルギー研究所 半導体装置
TWI508282B (zh) 2008-08-08 2015-11-11 Semiconductor Energy Lab 半導體裝置及其製造方法
JP5608347B2 (ja) 2008-08-08 2014-10-15 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP2010044894A (ja) * 2008-08-11 2010-02-25 Sony Corp 表示装置
US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
TWI606592B (zh) 2008-09-01 2017-11-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP5627071B2 (ja) 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101644406B1 (ko) 2008-09-12 2016-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101623224B1 (ko) 2008-09-12 2016-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
KR20110056542A (ko) * 2008-09-12 2011-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101545460B1 (ko) * 2008-09-12 2015-08-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 생산 방법
KR102413263B1 (ko) 2008-09-19 2022-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR101507324B1 (ko) 2008-09-19 2015-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101722409B1 (ko) * 2008-09-19 2017-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101999970B1 (ko) 2008-09-19 2019-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2010032639A1 (en) * 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
KR101611643B1 (ko) * 2008-10-01 2016-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP2172977A1 (en) 2008-10-03 2010-04-07 Semiconductor Energy Laboratory Co., Ltd. Display device
EP2172804B1 (en) 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
CN103928476A (zh) 2008-10-03 2014-07-16 株式会社半导体能源研究所 显示装置及其制造方法
KR101659925B1 (ko) 2008-10-03 2016-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
KR101273972B1 (ko) * 2008-10-03 2013-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
CN101719493B (zh) 2008-10-08 2014-05-14 株式会社半导体能源研究所 显示装置
JP5484853B2 (ja) 2008-10-10 2014-05-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2010044478A1 (en) * 2008-10-16 2010-04-22 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device
JP5361651B2 (ja) * 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101667909B1 (ko) 2008-10-24 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
US8741702B2 (en) 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2010047288A1 (en) * 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
EP2180518B1 (en) 2008-10-24 2018-04-25 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
CN102509736B (zh) 2008-10-24 2015-08-19 株式会社半导体能源研究所 半导体器件和用于制造该半导体器件的方法
US8106400B2 (en) 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5442234B2 (ja) 2008-10-24 2014-03-12 株式会社半導体エネルギー研究所 半導体装置及び表示装置
JP5616012B2 (ja) 2008-10-24 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI633605B (zh) * 2008-10-31 2018-08-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR101631454B1 (ko) 2008-10-31 2016-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리회로
KR101634411B1 (ko) * 2008-10-31 2016-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 표시 장치 및 전자 장치
KR101603303B1 (ko) 2008-10-31 2016-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 도전성 산질화물 및 도전성 산질화물막의 제작 방법
TWI487104B (zh) * 2008-11-07 2015-06-01 Semiconductor Energy Lab 半導體裝置和其製造方法
TW202025500A (zh) 2008-11-07 2020-07-01 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI467663B (zh) * 2008-11-07 2015-01-01 Semiconductor Energy Lab 半導體裝置和該半導體裝置的製造方法
CN101740631B (zh) * 2008-11-07 2014-07-16 株式会社半导体能源研究所 半导体装置及该半导体装置的制造方法
EP2184783B1 (en) 2008-11-07 2012-10-03 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and method for manufacturing the same
KR20130138352A (ko) * 2008-11-07 2013-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI536577B (zh) 2008-11-13 2016-06-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR101432764B1 (ko) * 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
US8232947B2 (en) 2008-11-14 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2010153365A (ja) * 2008-11-19 2010-07-08 Semiconductor Energy Lab Co Ltd 発光素子、発光装置、電子機器及び照明装置
JP2010153802A (ja) 2008-11-20 2010-07-08 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
KR101671544B1 (ko) 2008-11-21 2016-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치 및 전자 기기
TWI585955B (zh) * 2008-11-28 2017-06-01 半導體能源研究所股份有限公司 光感測器及顯示裝置
TWI616707B (zh) 2008-11-28 2018-03-01 半導體能源研究所股份有限公司 液晶顯示裝置
TWI606593B (zh) 2008-11-28 2017-11-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
KR101472771B1 (ko) * 2008-12-01 2014-12-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101348408B1 (ko) * 2008-12-02 2014-01-07 엘지디스플레이 주식회사 상부발광 방식 유기전계 발광소자 및 이의 제조 방법
TWI633371B (zh) 2008-12-03 2018-08-21 半導體能源研究所股份有限公司 液晶顯示裝置
JP5491833B2 (ja) * 2008-12-05 2014-05-14 株式会社半導体エネルギー研究所 半導体装置
JP5615540B2 (ja) * 2008-12-19 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN103456794B (zh) 2008-12-19 2016-08-10 株式会社半导体能源研究所 晶体管的制造方法
EP2515337B1 (en) * 2008-12-24 2016-02-24 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
US8441007B2 (en) 2008-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
KR101719350B1 (ko) * 2008-12-25 2017-03-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
TWI476915B (zh) 2008-12-25 2015-03-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8114720B2 (en) 2008-12-25 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI549198B (zh) 2008-12-26 2016-09-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP5590877B2 (ja) * 2008-12-26 2014-09-17 株式会社半導体エネルギー研究所 半導体装置
KR101648927B1 (ko) 2009-01-16 2016-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8492756B2 (en) 2009-01-23 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8436350B2 (en) * 2009-01-30 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using an oxide semiconductor with a plurality of metal clusters
JP4863407B2 (ja) * 2009-02-02 2012-01-25 株式会社日本製鋼所 半導体膜のレーザアニール方法
US8367486B2 (en) 2009-02-05 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
US8174021B2 (en) 2009-02-06 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
US8749930B2 (en) * 2009-02-09 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Protection circuit, semiconductor device, photoelectric conversion device, and electronic device
US8247812B2 (en) * 2009-02-13 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
US8278657B2 (en) 2009-02-13 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
CN101840936B (zh) 2009-02-13 2014-10-08 株式会社半导体能源研究所 包括晶体管的半导体装置及其制造方法
US8247276B2 (en) * 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US8841661B2 (en) * 2009-02-25 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
US8704216B2 (en) 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20100224878A1 (en) 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8461582B2 (en) 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100224880A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101671210B1 (ko) * 2009-03-06 2016-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR102195170B1 (ko) * 2009-03-12 2020-12-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI556323B (zh) * 2009-03-13 2016-11-01 半導體能源研究所股份有限公司 半導體裝置及該半導體裝置的製造方法
JP2010226059A (ja) * 2009-03-25 2010-10-07 Toshiba Corp 有機電界発光素子
US8450144B2 (en) * 2009-03-26 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101681884B1 (ko) 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치, 표시장치 및 전자기기
TWI529942B (zh) * 2009-03-27 2016-04-11 半導體能源研究所股份有限公司 半導體裝置
KR101752640B1 (ko) 2009-03-27 2017-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
US8927981B2 (en) * 2009-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8338226B2 (en) * 2009-04-02 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI489628B (zh) * 2009-04-02 2015-06-21 Semiconductor Energy Lab 半導體裝置和其製造方法
US8441047B2 (en) 2009-04-10 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI535023B (zh) 2009-04-16 2016-05-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
WO2010125986A1 (en) * 2009-05-01 2010-11-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20100279021A1 (en) * 2009-05-04 2010-11-04 Samsung Mobile Display Co., Ltd. Apparatus for depositing organic material and depositing method thereof
JP5751762B2 (ja) 2009-05-21 2015-07-22 株式会社半導体エネルギー研究所 半導体装置
EP2256814B1 (en) * 2009-05-29 2019-01-16 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
EP2256795B1 (en) * 2009-05-29 2014-11-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for oxide semiconductor device
JP5564331B2 (ja) 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101645146B1 (ko) 2009-06-30 2016-08-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
KR101944656B1 (ko) 2009-06-30 2019-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
CN104576748B (zh) 2009-06-30 2019-03-15 株式会社半导体能源研究所 半导体装置的制造方法
WO2011002046A1 (en) 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110000175A1 (en) * 2009-07-01 2011-01-06 Husqvarna Consumer Outdoor Products N.A. Inc. Variable speed controller
KR101476817B1 (ko) * 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터를 갖는 표시 장치 및 그 제작 방법
KR102503687B1 (ko) 2009-07-03 2023-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP5663214B2 (ja) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2011004723A1 (en) * 2009-07-10 2011-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method the same
KR20210131462A (ko) 2009-07-10 2021-11-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 제작 방법
WO2011004755A1 (en) 2009-07-10 2011-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011007677A1 (en) 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011007682A1 (en) 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR101739154B1 (ko) * 2009-07-17 2017-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011010545A1 (en) 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102181301B1 (ko) 2009-07-18 2020-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
KR101929726B1 (ko) 2009-07-18 2018-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
KR101782176B1 (ko) 2009-07-18 2017-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
WO2011010542A1 (en) * 2009-07-23 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011010546A1 (en) * 2009-07-24 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI495570B (zh) * 2009-07-27 2015-08-11 Memjet Technology Ltd 具背側電連接之噴墨列印頭組件
CN102473734B (zh) * 2009-07-31 2015-08-12 株式会社半导体能源研究所 半导体装置及其制造方法
WO2011013502A1 (en) * 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011013523A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20120051727A (ko) 2009-07-31 2012-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스 및 그 형성 방법
KR102362616B1 (ko) 2009-07-31 2022-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP5663231B2 (ja) * 2009-08-07 2015-02-04 株式会社半導体エネルギー研究所 発光装置
TWI559501B (zh) 2009-08-07 2016-11-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI582951B (zh) 2009-08-07 2017-05-11 半導體能源研究所股份有限公司 半導體裝置及包括該半導體裝置之電話、錶、和顯示裝置
TWI596741B (zh) * 2009-08-07 2017-08-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
JP5642447B2 (ja) 2009-08-07 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
EP2284891B1 (en) * 2009-08-07 2019-07-24 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
TWI746064B (zh) 2009-08-07 2021-11-11 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
US8115883B2 (en) 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
WO2011027649A1 (en) * 2009-09-02 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a transistor, and manufacturing method of semiconductor device
WO2011027723A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011027676A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9805641B2 (en) * 2009-09-04 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
KR101988341B1 (ko) 2009-09-04 2019-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
KR101746198B1 (ko) 2009-09-04 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 전자기기
WO2011027701A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
WO2011027664A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
WO2011027702A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
WO2011027656A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
KR101791812B1 (ko) 2009-09-04 2017-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9715845B2 (en) 2009-09-16 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
WO2011034012A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, light emitting device, semiconductor device, and electronic device
WO2011033909A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device including the driver circuit, and electronic device including the display device
KR101730347B1 (ko) 2009-09-16 2017-04-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101801956B1 (ko) 2009-09-16 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
WO2011033914A1 (en) 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Driving method of display device and display device
EP3217435A1 (en) * 2009-09-16 2017-09-13 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
KR102057221B1 (ko) * 2009-09-16 2019-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR20120071393A (ko) 2009-09-24 2012-07-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101707260B1 (ko) * 2009-09-24 2017-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011037010A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and method for manufacturing the same
CN105513644B (zh) 2009-09-24 2019-10-15 株式会社半导体能源研究所 驱动器电路、包括驱动器电路的显示设备以及包括显示设备的电子电器
KR20120090972A (ko) 2009-09-24 2012-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101740943B1 (ko) 2009-09-24 2017-06-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
TWI512997B (zh) 2009-09-24 2015-12-11 Semiconductor Energy Lab 半導體裝置，電源電路，和半導體裝置的製造方法
WO2011037008A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
KR102054650B1 (ko) 2009-09-24 2019-12-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
KR20120080575A (ko) * 2009-09-30 2012-07-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레독스 커패시터 및 그 제작 방법
KR101767035B1 (ko) * 2009-10-01 2017-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011043163A1 (en) * 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011043182A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for removing electricity and method for manufacturing semiconductor device
KR101877149B1 (ko) 2009-10-08 2018-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체층, 반도체 장치 및 그 제조 방법
KR101763959B1 (ko) 2009-10-08 2017-08-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치, 및 전자 기기
WO2011043206A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102576737B (zh) 2009-10-09 2015-10-21 株式会社半导体能源研究所 半导体器件及其制造方法
KR101940962B1 (ko) 2009-10-09 2019-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN103984176B (zh) * 2009-10-09 2016-01-20 株式会社半导体能源研究所 液晶显示装置及包括该液晶显示装置的电子设备
WO2011043215A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Shift register and display device and driving method thereof
KR101759504B1 (ko) 2009-10-09 2017-07-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 표시 장치 및 이를 포함한 전자 기기
WO2011043194A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011043162A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR101754701B1 (ko) 2009-10-09 2017-07-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 제조하기 위한 방법
WO2011043164A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR101882350B1 (ko) 2009-10-09 2018-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101832698B1 (ko) * 2009-10-14 2018-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101943293B1 (ko) 2009-10-16 2019-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치 및 전자 장치
KR101772639B1 (ko) 2009-10-16 2017-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
IN2012DN01823A (enExample) 2009-10-16 2015-06-05 Semiconductor Energy Lab
KR101801540B1 (ko) 2009-10-16 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 액정 표시 장치를 포함한 전자 기기
CN116343705B (zh) 2009-10-16 2025-08-26 株式会社半导体能源研究所 显示设备
WO2011048925A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101847656B1 (ko) * 2009-10-21 2018-05-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101293261B1 (ko) 2009-10-21 2013-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 표시 장치를 갖는 전자 기기
KR101892430B1 (ko) 2009-10-21 2018-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN105702688B (zh) * 2009-10-21 2020-09-08 株式会社半导体能源研究所 液晶显示器件及包括该液晶显示器件的电子设备
JP5730529B2 (ja) 2009-10-21 2015-06-10 株式会社半導体エネルギー研究所 半導体装置
WO2011048923A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. E-book reader
KR102162746B1 (ko) 2009-10-21 2020-10-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 아날로그 회로 및 반도체 장치
WO2011052351A1 (en) * 2009-10-29 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20220153647A (ko) 2009-10-29 2022-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011052366A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
KR20120099657A (ko) 2009-10-30 2012-09-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
WO2011052437A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
CN102668096B (zh) 2009-10-30 2015-04-29 株式会社半导体能源研究所 半导体装置及其制造方法
KR101669476B1 (ko) 2009-10-30 2016-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치
KR101796909B1 (ko) 2009-10-30 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 비선형 소자, 표시 장치, 및 전자 기기
WO2011052382A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011052385A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101788521B1 (ko) 2009-10-30 2017-10-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101712340B1 (ko) * 2009-10-30 2017-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 구동 회로를 포함하는 표시 장치, 및 표시 장치를 포함하는 전자 기기
KR101752348B1 (ko) * 2009-10-30 2017-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102576172B (zh) * 2009-10-30 2016-01-27 株式会社半导体能源研究所 液晶显示设备、其驱动方法以及包括该液晶显示设备的电子电器
WO2011052410A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Power diode, rectifier, and semiconductor device including the same
WO2011052411A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
US8404500B2 (en) 2009-11-02 2013-03-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting element, light-emitting element, light-emitting device, lighting device, and electronic appliance
JP5539846B2 (ja) 2009-11-06 2014-07-02 株式会社半導体エネルギー研究所 評価方法、半導体装置の作製方法
CN102598279B (zh) * 2009-11-06 2015-10-07 株式会社半导体能源研究所 半导体装置
KR101810254B1 (ko) * 2009-11-06 2017-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 동작 방법
CN104600074A (zh) 2009-11-06 2015-05-06 株式会社半导体能源研究所 半导体装置
KR20190066086A (ko) 2009-11-06 2019-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101761432B1 (ko) 2009-11-06 2017-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101747158B1 (ko) 2009-11-06 2017-06-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하기 위한 방법
KR102317763B1 (ko) 2009-11-06 2021-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR101707159B1 (ko) 2009-11-06 2017-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101299255B1 (ko) * 2009-11-06 2013-08-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20120093952A (ko) * 2009-11-06 2012-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자 및 반도체 장치 제조 방법과, 성막 장치
KR101727469B1 (ko) 2009-11-06 2017-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR20120106950A (ko) * 2009-11-13 2012-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟 및 그 제작 방법 및 트랜지스터
KR101721850B1 (ko) * 2009-11-13 2017-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011058882A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and manufacturing method thereof, and transistor
WO2011058913A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102329497B1 (ko) 2009-11-13 2021-11-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이 표시 장치를 구비한 전자 기기
KR101975741B1 (ko) 2009-11-13 2019-05-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 타깃 재료의 포장 방법 및 타깃의 장착 방법
KR102771839B1 (ko) 2009-11-13 2025-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011058934A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR101738996B1 (ko) * 2009-11-13 2017-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 메모리 소자를 포함하는 장치
KR101751560B1 (ko) * 2009-11-13 2017-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011062029A1 (en) 2009-11-18 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
JP5762723B2 (ja) 2009-11-20 2015-08-12 株式会社半導体エネルギー研究所 変調回路及びそれを備えた半導体装置
KR101800854B1 (ko) * 2009-11-20 2017-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
CN102668063B (zh) * 2009-11-20 2015-02-18 株式会社半导体能源研究所 半导体装置
WO2011062075A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
WO2011062067A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101928723B1 (ko) 2009-11-20 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011062043A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR102026212B1 (ko) 2009-11-20 2019-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
WO2011062042A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101800852B1 (ko) 2009-11-20 2017-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101662359B1 (ko) * 2009-11-24 2016-10-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 메모리 셀을 포함하는 반도체 장치
KR101191645B1 (ko) * 2009-11-25 2012-10-17 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR20170091760A (ko) 2009-11-27 2017-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102008769B1 (ko) 2009-11-27 2019-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
WO2011065209A1 (en) * 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
KR101803254B1 (ko) * 2009-11-27 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102089200B1 (ko) * 2009-11-28 2020-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101520024B1 (ko) 2009-11-28 2015-05-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011065210A1 (en) * 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
CN105206514B (zh) 2009-11-28 2018-04-10 株式会社半导体能源研究所 层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法
WO2011065230A1 (en) * 2009-11-30 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, method for driving the same, and electronic device including the same
KR101049003B1 (ko) * 2009-12-01 2011-07-12 삼성모바일디스플레이주식회사 평판 표시 장치 및 그의 제조 방법
JP5584103B2 (ja) * 2009-12-04 2014-09-03 株式会社半導体エネルギー研究所 半導体装置
WO2011068022A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011068016A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2507823B1 (en) * 2009-12-04 2018-09-26 Semiconductor Energy Laboratory Co. Ltd. Manufacturing method for semiconductor device
CN102648525B (zh) 2009-12-04 2016-05-04 株式会社半导体能源研究所 显示装置
KR101840623B1 (ko) * 2009-12-04 2018-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이를 포함하는 전자 기기
KR101800038B1 (ko) * 2009-12-04 2017-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR102333270B1 (ko) 2009-12-04 2021-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011068025A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Dc converter circuit and power supply circuit
CN104992962B (zh) 2009-12-04 2018-12-25 株式会社半导体能源研究所 半导体器件及其制造方法
JP2011139052A (ja) * 2009-12-04 2011-07-14 Semiconductor Energy Lab Co Ltd 半導体記憶装置
WO2011068033A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011068028A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and method for manufacturing the same
WO2011070892A1 (en) 2009-12-08 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011070900A1 (en) 2009-12-08 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101742777B1 (ko) 2009-12-10 2017-06-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법 및 표시 장치
KR101770976B1 (ko) 2009-12-11 2017-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
IN2012DN04871A (enExample) 2009-12-11 2015-09-25 Semiconductor Energy Laoboratory Co Ltd
WO2011070901A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011070929A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR20170116239A (ko) 2009-12-11 2017-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터
JP5727204B2 (ja) 2009-12-11 2015-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2011074590A1 (en) 2009-12-17 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, measurement apparatus, and measurement method of relative permittivity
KR102135817B1 (ko) 2009-12-18 2020-07-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 기기
WO2011074407A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101768433B1 (ko) 2009-12-18 2017-08-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
KR101887837B1 (ko) * 2009-12-18 2018-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광 센서를 포함하는 표시 장치 및 그 구동 방법
WO2011074393A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Method for driving liquid crystal display device
KR101813460B1 (ko) 2009-12-18 2017-12-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011074379A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and driving method thereof
US9057758B2 (en) 2009-12-18 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for measuring current, method for inspecting semiconductor device, semiconductor device, and test element group
KR101729933B1 (ko) 2009-12-18 2017-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치
CN105429621B (zh) 2009-12-23 2019-03-19 株式会社半导体能源研究所 半导体装置
KR20120101716A (ko) 2009-12-24 2012-09-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
WO2011077916A1 (en) 2009-12-24 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device
CN102804360B (zh) * 2009-12-25 2014-12-17 株式会社半导体能源研究所 半导体装置
WO2011078373A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Memory device, semiconductor device, and electronic device
WO2011077925A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for driving liquid crystal display device
WO2011077946A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8441009B2 (en) * 2009-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011077978A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
WO2011077966A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN105023942B (zh) 2009-12-28 2018-11-02 株式会社半导体能源研究所 制造半导体装置的方法
IN2012DN05057A (enExample) 2009-12-28 2015-10-09 Semiconductor Energy Lab
KR101762316B1 (ko) * 2009-12-28 2017-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP2519969A4 (en) 2009-12-28 2016-07-06 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT
WO2011081041A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR101872678B1 (ko) 2009-12-28 2018-07-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 기기
KR101698537B1 (ko) 2010-01-15 2017-01-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8780629B2 (en) * 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
SG10201500220TA (en) 2010-01-15 2015-03-30 Semiconductor Energy Lab Semiconductor device and method for driving the same
CN102696064B (zh) 2010-01-15 2015-11-25 株式会社半导体能源研究所 半导体装置和电子装置
KR101848516B1 (ko) * 2010-01-15 2018-04-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011086847A1 (en) 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101791279B1 (ko) * 2010-01-15 2017-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011089849A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Portable electronic device
KR101750126B1 (ko) 2010-01-20 2017-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법 및 액정 표시 장치
US8415731B2 (en) * 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
KR101842860B1 (ko) 2010-01-20 2018-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법
US9984617B2 (en) 2010-01-20 2018-05-29 Semiconductor Energy Laboratory Co., Ltd. Display device including light emitting element
CN102714023B (zh) * 2010-01-20 2016-05-04 株式会社半导体能源研究所 液晶显示设备的驱动方法
CN102713999B (zh) 2010-01-20 2016-01-20 株式会社半导体能源研究所 电子设备和电子系统
CN102804603B (zh) 2010-01-20 2015-07-15 株式会社半导体能源研究所 信号处理电路及其驱动方法
CN102714029B (zh) * 2010-01-20 2016-03-23 株式会社半导体能源研究所 显示装置的显示方法
KR102479269B1 (ko) * 2010-01-20 2022-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 휴대 전화기
IN2012DN05920A (enExample) 2010-01-20 2015-09-18 Semiconductor Energy Lab
KR102088281B1 (ko) * 2010-01-22 2020-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102714209B (zh) * 2010-01-22 2015-09-16 株式会社半导体能源研究所 半导体存储器件及其驱动方法
KR101773641B1 (ko) 2010-01-22 2017-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI525377B (zh) 2010-01-24 2016-03-11 半導體能源研究所股份有限公司 顯示裝置
KR101805378B1 (ko) * 2010-01-24 2017-12-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치와 이의 제조 방법
KR102069496B1 (ko) 2010-01-24 2020-01-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2011093151A1 (en) 2010-01-29 2011-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the same
KR101893904B1 (ko) * 2010-01-29 2018-08-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
WO2011093150A1 (en) 2010-01-29 2011-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011096271A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN102687275B (zh) * 2010-02-05 2016-01-27 株式会社半导体能源研究所 半导体装置
KR101921618B1 (ko) 2010-02-05 2018-11-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
KR101822962B1 (ko) 2010-02-05 2018-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101862823B1 (ko) * 2010-02-05 2018-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
KR101926336B1 (ko) 2010-02-05 2019-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8436403B2 (en) 2010-02-05 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor provided with sidewall and electronic appliance
KR101399610B1 (ko) 2010-02-05 2014-05-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제조 방법
WO2011096153A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Display device
US9391209B2 (en) 2010-02-05 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101791713B1 (ko) 2010-02-05 2017-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터 및 반도체 장치
KR101810261B1 (ko) 2010-02-10 2017-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터
US8947337B2 (en) 2010-02-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2011099360A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
KR101838130B1 (ko) 2010-02-12 2018-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작방법
KR101814222B1 (ko) * 2010-02-12 2018-01-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 장치
KR101811204B1 (ko) * 2010-02-12 2017-12-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
WO2011099368A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
KR101924318B1 (ko) * 2010-02-12 2018-12-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
US8617920B2 (en) * 2010-02-12 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011099343A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR20130023203A (ko) 2010-02-12 2013-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 구동 방법
KR102586642B1 (ko) 2010-02-18 2023-10-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101820776B1 (ko) 2010-02-19 2018-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5740169B2 (ja) * 2010-02-19 2015-06-24 株式会社半導体エネルギー研究所 トランジスタの作製方法
KR101832119B1 (ko) 2010-02-19 2018-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20180031075A (ko) * 2010-02-19 2018-03-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
WO2011102206A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device, driving method thereof, and method for manufacturing semiconductor device
CN105786268B (zh) 2010-02-19 2019-03-12 株式会社半导体能源研究所 显示设备及其驱动方法
KR101848684B1 (ko) * 2010-02-19 2018-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 장치
CN102754162B (zh) 2010-02-19 2015-12-09 株式会社半导体能源研究所 半导体器件及半导体器件的驱动方法
KR20190102090A (ko) 2010-02-19 2019-09-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터 및 이를 이용한 표시 장치
CN102754163B (zh) * 2010-02-19 2015-11-25 株式会社半导体能源研究所 半导体器件
WO2011102190A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Demodulation circuit and rfid tag including the demodulation circuit
KR102151495B1 (ko) 2010-02-23 2020-09-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011105183A1 (en) * 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor element and deposition apparatus
US9000438B2 (en) 2010-02-26 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20120120458A (ko) 2010-02-26 2012-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
KR20250150667A (ko) 2010-02-26 2025-10-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011105310A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN106328085B (zh) * 2010-02-26 2020-07-28 株式会社半导体能源研究所 显示设备及其驱动方法
KR20180001562A (ko) 2010-02-26 2018-01-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하기 위한 방법
KR101803552B1 (ko) * 2010-02-26 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이 표시 장치를 구비하는 전자 서적
KR101780841B1 (ko) 2010-02-26 2017-09-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101767037B1 (ko) 2010-03-02 2017-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 승압 회로 및 승압 회로를 포함하는 ｒｆｉｄ 태그
DE112011106185B3 (de) * 2010-03-02 2023-05-04 Semiconductor Energy Laboratory Co., Ltd. Impulssignal-Ausgangsschaltung und Schieberegister
DE112011100749B4 (de) 2010-03-02 2015-06-11 Semiconductor Energy Laboratory Co., Ltd. Impulssignal-Ausgangsschaltung und Schieberegister
KR101838628B1 (ko) 2010-03-02 2018-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 펄스 신호 출력 회로 및 시프트 레지스터
KR101932909B1 (ko) * 2010-03-04 2018-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치 및 반도체 장치
KR102114012B1 (ko) * 2010-03-05 2020-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2011108346A1 (en) * 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor film and manufacturing method of transistor
KR20130008037A (ko) * 2010-03-05 2013-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하는 방법
WO2011108374A1 (en) * 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN106449649B (zh) 2010-03-08 2019-09-27 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
KR101898297B1 (ko) * 2010-03-08 2018-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
KR20180020327A (ko) 2010-03-08 2018-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치를 제작하는 방법
WO2011111504A1 (en) 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Electronic device and electronic system
KR101812467B1 (ko) * 2010-03-08 2017-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TW201732525A (zh) * 2010-03-08 2017-09-16 半導體能源研究所股份有限公司 電子裝置及電子系統
CN102792677B (zh) 2010-03-08 2015-08-05 株式会社半导体能源研究所 半导体器件及其制造方法
US8900362B2 (en) * 2010-03-12 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of gallium oxide single crystal
CN102822978B (zh) * 2010-03-12 2015-07-22 株式会社半导体能源研究所 半导体装置及其制造方法
KR101773992B1 (ko) 2010-03-12 2017-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101840185B1 (ko) 2010-03-12 2018-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 회로를 구동하는 방법 및 표시 장치를 구동하는 방법
WO2011111508A1 (en) * 2010-03-12 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Method for driving input circuit and method for driving input-output device
DE112011100886T5 (de) * 2010-03-12 2012-12-27 Semiconductor Energy Laboratory Co., Ltd. Ansteuerverfahren für Anzeigeeinrichtung
WO2011114866A1 (en) 2010-03-17 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US20110227082A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101891065B1 (ko) * 2010-03-19 2018-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 구동 방법
WO2011114905A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2011114868A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011114919A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011118351A1 (en) * 2010-03-25 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011118364A1 (en) * 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101921047B1 (ko) 2010-03-26 2018-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하는 방법
CN105789321B (zh) * 2010-03-26 2019-08-20 株式会社半导体能源研究所 半导体装置的制造方法
WO2011118741A1 (en) 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5731244B2 (ja) * 2010-03-26 2015-06-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101761966B1 (ko) 2010-03-31 2017-07-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전력 공급 장치와 그 구동 방법
WO2011122312A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for driving the same
KR20130069583A (ko) 2010-03-31 2013-06-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 필드 시퀀셜 구동형 표시 장치
CN102844873B (zh) 2010-03-31 2015-06-17 株式会社半导体能源研究所 半导体显示装置
WO2011122299A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
CN106098788B (zh) 2010-04-02 2020-10-16 株式会社半导体能源研究所 半导体装置
US9196739B2 (en) 2010-04-02 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor film and metal oxide film
KR102276768B1 (ko) 2010-04-02 2021-07-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8884282B2 (en) 2010-04-02 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9190522B2 (en) 2010-04-02 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor
US9147768B2 (en) 2010-04-02 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor and a metal oxide film
KR101884031B1 (ko) 2010-04-07 2018-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
CN102918650B (zh) 2010-04-07 2017-03-22 株式会社半导体能源研究所 晶体管
WO2011125455A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
WO2011125688A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for driving the same
WO2011125456A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011125454A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8207025B2 (en) 2010-04-09 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8653514B2 (en) 2010-04-09 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011125806A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5744366B2 (ja) 2010-04-12 2015-07-08 株式会社半導体エネルギー研究所 液晶表示装置
US8854583B2 (en) 2010-04-12 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device
WO2011129456A1 (en) 2010-04-16 2011-10-20 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing semiconductor device
WO2011129209A1 (en) 2010-04-16 2011-10-20 Semiconductor Energy Laboratory Co., Ltd. Power source circuit
US8552712B2 (en) 2010-04-16 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Current measurement method, inspection method of semiconductor device, semiconductor device, and test element group
KR101904445B1 (ko) 2010-04-16 2018-10-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8692243B2 (en) 2010-04-20 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101833082B1 (ko) 2010-04-23 2018-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 구동 방법
WO2011132591A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9537043B2 (en) 2010-04-23 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
CN104465408B (zh) 2010-04-23 2017-09-15 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
KR101540039B1 (ko) 2010-04-23 2015-07-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
DE112011101410B4 (de) 2010-04-23 2018-03-01 Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Herstellen einer Halbleitervorrichtung
KR101877377B1 (ko) 2010-04-23 2018-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
DE112011101395B4 (de) 2010-04-23 2014-10-16 Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Herstellen einer Halbleitervorrichtung
WO2011135999A1 (en) 2010-04-27 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2011136018A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic appliance
WO2011135987A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9349325B2 (en) 2010-04-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US9697788B2 (en) 2010-04-28 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR101879570B1 (ko) 2010-04-28 2018-07-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 그 제작 방법
US8890555B2 (en) 2010-04-28 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for measuring transistor
US9064473B2 (en) 2010-05-12 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
US9478185B2 (en) 2010-05-12 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
JP5797449B2 (ja) 2010-05-13 2015-10-21 株式会社半導体エネルギー研究所 半導体装置の評価方法
WO2011142371A1 (en) 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8664658B2 (en) 2010-05-14 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI511236B (zh) 2010-05-14 2015-12-01 Semiconductor Energy Lab 半導體裝置
KR101806271B1 (ko) 2010-05-14 2017-12-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
WO2011145738A1 (en) 2010-05-20 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US9496405B2 (en) 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
US9490368B2 (en) 2010-05-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US8416622B2 (en) 2010-05-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Driving method of a semiconductor device with an inverted period having a negative potential applied to a gate of an oxide semiconductor transistor
US8624239B2 (en) 2010-05-20 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5852793B2 (ja) 2010-05-21 2016-02-03 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
CN102906980B (zh) 2010-05-21 2015-08-19 株式会社半导体能源研究所 半导体装置及显示装置
KR101872927B1 (ko) 2010-05-21 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102906882B (zh) 2010-05-21 2015-11-25 株式会社半导体能源研究所 半导体装置及其制造方法
WO2011145633A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8906756B2 (en) 2010-05-21 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011145468A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US8629438B2 (en) 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5766012B2 (ja) 2010-05-21 2015-08-19 株式会社半導体エネルギー研究所 液晶表示装置
WO2011145707A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
WO2011145484A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5714973B2 (ja) 2010-05-21 2015-05-07 株式会社半導体エネルギー研究所 半導体装置
WO2011145537A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR20130082091A (ko) 2010-05-21 2013-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011145634A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5749975B2 (ja) 2010-05-28 2015-07-15 株式会社半導体エネルギー研究所 光検出装置、及び、タッチパネル
US8895375B2 (en) 2010-06-01 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and method for manufacturing the same
WO2011152254A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011152233A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011152286A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8779433B2 (en) 2010-06-04 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011155295A1 (en) 2010-06-10 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Dc/dc converter, power supply circuit, and semiconductor device
US8610180B2 (en) 2010-06-11 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Gas sensor and method for manufacturing the gas sensor
WO2011155302A1 (en) 2010-06-11 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE112011101969B4 (de) 2010-06-11 2018-05-09 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und Verfahren zum Herstellen derselben
US9209314B2 (en) 2010-06-16 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
JP5823740B2 (ja) 2010-06-16 2015-11-25 株式会社半導体エネルギー研究所 入出力装置
JP5797471B2 (ja) 2010-06-16 2015-10-21 株式会社半導体エネルギー研究所 入出力装置
KR101862808B1 (ko) 2010-06-18 2018-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8637802B2 (en) 2010-06-18 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
US8552425B2 (en) 2010-06-18 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011158704A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011162147A1 (en) 2010-06-23 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20120000499A (ko) 2010-06-25 2012-01-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터 및 반도체 장치
US8912016B2 (en) 2010-06-25 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method and test method of semiconductor device
WO2011162104A1 (en) 2010-06-25 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9437454B2 (en) 2010-06-29 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Wiring board, semiconductor device, and manufacturing methods thereof
WO2012002104A1 (en) 2010-06-30 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9473714B2 (en) 2010-07-01 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Solid-state imaging device and semiconductor display device
KR101801960B1 (ko) 2010-07-01 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 구동 방법
US8441010B2 (en) 2010-07-01 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8642380B2 (en) 2010-07-02 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8605059B2 (en) 2010-07-02 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Input/output device and driving method thereof
US9336739B2 (en) 2010-07-02 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR20130090405A (ko) 2010-07-02 2013-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
CN102959713B (zh) 2010-07-02 2017-05-10 株式会社半导体能源研究所 半导体装置
US8766252B2 (en) 2010-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor
TWI541782B (zh) 2010-07-02 2016-07-11 半導體能源研究所股份有限公司 液晶顯示裝置
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5792524B2 (ja) 2010-07-02 2015-10-14 株式会社半導体エネルギー研究所 装置
US8785241B2 (en) 2010-07-16 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN103003934B (zh) 2010-07-16 2015-07-01 株式会社半导体能源研究所 半导体器件
WO2012008390A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012008286A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5676949B2 (ja) * 2010-07-21 2015-02-25 キヤノン株式会社 有機ｅｌ表示装置
US8519387B2 (en) 2010-07-26 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing
WO2012014790A1 (en) 2010-07-27 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012014952A1 (en) 2010-07-27 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
WO2012014252A1 (ja) * 2010-07-27 2012-02-02 パナソニック株式会社 有機ｅｌ表示パネルとその製造方法
TWI565001B (zh) 2010-07-28 2017-01-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
JP5846789B2 (ja) 2010-07-29 2016-01-20 株式会社半導体エネルギー研究所 半導体装置
WO2012014786A1 (en) 2010-07-30 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semicondcutor device and manufacturing method thereof
US8928466B2 (en) 2010-08-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8537600B2 (en) 2010-08-04 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Low off-state leakage current semiconductor memory device
KR101842181B1 (ko) 2010-08-04 2018-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5739257B2 (ja) 2010-08-05 2015-06-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5832181B2 (ja) 2010-08-06 2015-12-16 株式会社半導体エネルギー研究所 液晶表示装置
KR102006586B1 (ko) 2010-08-06 2019-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI555128B (zh) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
US8792284B2 (en) 2010-08-06 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP5743790B2 (ja) 2010-08-06 2015-07-01 株式会社半導体エネルギー研究所 半導体装置
US8582348B2 (en) 2010-08-06 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US8803164B2 (en) 2010-08-06 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Solid-state image sensing device and semiconductor display device
US8467232B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5671418B2 (ja) 2010-08-06 2015-02-18 株式会社半導体エネルギー研究所 半導体装置の駆動方法
US8467231B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
TWI605549B (zh) 2010-08-06 2017-11-11 半導體能源研究所股份有限公司 半導體裝置
DE112011102644B4 (de) 2010-08-06 2019-12-05 Semiconductor Energy Laboratory Co., Ltd. Integrierte Halbleiterschaltung
US9129703B2 (en) 2010-08-16 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor memory device
TWI621184B (zh) 2010-08-16 2018-04-11 半導體能源研究所股份有限公司 半導體裝置之製造方法
JP5848912B2 (ja) 2010-08-16 2016-01-27 株式会社半導体エネルギー研究所 液晶表示装置の制御回路、液晶表示装置、及び当該液晶表示装置を具備する電子機器
US9343480B2 (en) 2010-08-16 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI508294B (zh) 2010-08-19 2015-11-11 Semiconductor Energy Lab 半導體裝置
US8759820B2 (en) 2010-08-20 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8685787B2 (en) 2010-08-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8508276B2 (en) 2010-08-25 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including latch circuit
US8883555B2 (en) 2010-08-25 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Electronic device, manufacturing method of electronic device, and sputtering target
JP5727892B2 (ja) 2010-08-26 2015-06-03 株式会社半導体エネルギー研究所 半導体装置
US9058047B2 (en) 2010-08-26 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013009285A (ja) 2010-08-26 2013-01-10 Semiconductor Energy Lab Co Ltd 信号処理回路及びその駆動方法
JP5763474B2 (ja) 2010-08-27 2015-08-12 株式会社半導体エネルギー研究所 光センサ
KR101928897B1 (ko) 2010-08-27 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 반도체 장치
JP5806043B2 (ja) 2010-08-27 2015-11-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8603841B2 (en) 2010-08-27 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of semiconductor device and light-emitting display device
US8450123B2 (en) 2010-08-27 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Oxygen diffusion evaluation method of oxide film stacked body
JP5674594B2 (ja) 2010-08-27 2015-02-25 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の駆動方法
KR20120020073A (ko) 2010-08-27 2012-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 설계 방법
US8593858B2 (en) 2010-08-31 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8634228B2 (en) 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8575610B2 (en) 2010-09-02 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
WO2012029596A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2012029638A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130099074A (ko) 2010-09-03 2013-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟 및 반도체 장치의 제작 방법
KR20180105252A (ko) 2010-09-03 2018-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터 및 반도체 장치의 제조 방법
JP2012256819A (ja) 2010-09-08 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置
US8520426B2 (en) 2010-09-08 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US8487844B2 (en) 2010-09-08 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device including the same
US8766253B2 (en) 2010-09-10 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9142568B2 (en) 2010-09-10 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting display device
US8797487B2 (en) 2010-09-10 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Transistor, liquid crystal display device, and manufacturing method thereof
KR20120026970A (ko) 2010-09-10 2012-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 발광 장치
KR101824125B1 (ko) 2010-09-10 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US8647919B2 (en) * 2010-09-13 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and method for manufacturing the same
US9546416B2 (en) 2010-09-13 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Method of forming crystalline oxide semiconductor film
KR101932576B1 (ko) 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101872926B1 (ko) 2010-09-13 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2012256821A (ja) 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
JP5827520B2 (ja) 2010-09-13 2015-12-02 株式会社半導体エネルギー研究所 半導体記憶装置
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101952235B1 (ko) 2010-09-13 2019-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US8835917B2 (en) 2010-09-13 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power diode, and rectifier
JP5815337B2 (ja) 2010-09-13 2015-11-17 株式会社半導体エネルギー研究所 半導体装置
US8546161B2 (en) 2010-09-13 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and liquid crystal display device
US8664097B2 (en) 2010-09-13 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8558960B2 (en) 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
US9496743B2 (en) 2010-09-13 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Power receiving device and wireless power feed system
TWI608486B (zh) 2010-09-13 2017-12-11 半導體能源研究所股份有限公司 半導體裝置
US8592879B2 (en) 2010-09-13 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI539453B (zh) 2010-09-14 2016-06-21 半導體能源研究所股份有限公司 記憶體裝置和半導體裝置
US9230994B2 (en) 2010-09-15 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR20130106398A (ko) 2010-09-15 2013-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 그 제작 방법
JP2012256012A (ja) 2010-09-15 2012-12-27 Semiconductor Energy Lab Co Ltd 表示装置
WO2012035984A1 (en) 2010-09-15 2012-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
KR101856722B1 (ko) 2010-09-22 2018-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 파워 절연 게이트형 전계 효과 트랜지스터
US8767443B2 (en) 2010-09-22 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for inspecting the same
CN103124803B (zh) 2010-09-27 2015-06-17 夏普株式会社 蒸镀方法、蒸镀装置和有机el显示装置
US8792260B2 (en) 2010-09-27 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Rectifier circuit and semiconductor device using the same
TWI574259B (zh) 2010-09-29 2017-03-11 半導體能源研究所股份有限公司 半導體記憶體裝置和其驅動方法
WO2012042565A1 (ja) * 2010-09-29 2012-04-05 パナソニック株式会社 Ｅｌ表示パネル、ｅｌ表示装置及びｅｌ表示パネルの製造方法
TWI620176B (zh) 2010-10-05 2018-04-01 半導體能源研究所股份有限公司 半導體記憶體裝置及其驅動方法
US9437743B2 (en) 2010-10-07 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Thin film element, semiconductor device, and method for manufacturing the same
US8716646B2 (en) 2010-10-08 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for operating the same
US8679986B2 (en) 2010-10-14 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8546892B2 (en) 2010-10-20 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8803143B2 (en) 2010-10-20 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including buffer layers with high resistivity
DE102010042727A1 (de) * 2010-10-21 2012-05-10 Ledon Oled Lighting Gmbh & Co. Kg OLED-Modul
TWI476931B (zh) * 2010-10-21 2015-03-11 Au Optronics Corp 薄膜電晶體與具有此薄膜電晶體的畫素結構
TWI543158B (zh) 2010-10-25 2016-07-21 半導體能源研究所股份有限公司 半導體儲存裝置及其驅動方法
KR101924231B1 (ko) 2010-10-29 2018-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
WO2012057296A1 (en) 2010-10-29 2012-05-03 Semiconductor Energy Laboratory Co., Ltd. Storage device
JP5771505B2 (ja) 2010-10-29 2015-09-02 株式会社半導体エネルギー研究所 受信回路
CN103313993A (zh) 2010-11-02 2013-09-18 宇部兴产株式会社 (酰胺氨基烷烃)金属化合物及使用所述金属化合物制备含金属的薄膜的方法
US8916866B2 (en) 2010-11-03 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8569754B2 (en) 2010-11-05 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2012060253A1 (en) 2010-11-05 2012-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI555205B (zh) 2010-11-05 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
CN103201831B (zh) 2010-11-05 2015-08-05 株式会社半导体能源研究所 半导体装置
US8957468B2 (en) 2010-11-05 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Variable capacitor and liquid crystal display device
US9087744B2 (en) 2010-11-05 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving transistor
JP6010291B2 (ja) 2010-11-05 2016-10-19 株式会社半導体エネルギー研究所 表示装置の駆動方法
US8902637B2 (en) 2010-11-08 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device comprising inverting amplifier circuit and driving method thereof
TWI535014B (zh) 2010-11-11 2016-05-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI541981B (zh) 2010-11-12 2016-07-11 半導體能源研究所股份有限公司 半導體裝置
US8854865B2 (en) 2010-11-24 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8936965B2 (en) 2010-11-26 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8823092B2 (en) 2010-11-30 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8809852B2 (en) 2010-11-30 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
TWI562379B (en) 2010-11-30 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing semiconductor device
US8629496B2 (en) 2010-11-30 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8816425B2 (en) 2010-11-30 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9103724B2 (en) 2010-11-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device
US8461630B2 (en) 2010-12-01 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101457833B1 (ko) 2010-12-03 2014-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5908263B2 (ja) 2010-12-03 2016-04-26 株式会社半導体エネルギー研究所 Ｄｃ−ｄｃコンバータ
TWI632551B (zh) 2010-12-03 2018-08-11 半導體能源研究所股份有限公司 積體電路，其驅動方法，及半導體裝置
US8957462B2 (en) 2010-12-09 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an N-type transistor with an N-type semiconductor containing nitrogen as a gate
TWI534905B (zh) 2010-12-10 2016-05-21 半導體能源研究所股份有限公司 顯示裝置及顯示裝置之製造方法
JP2012256020A (ja) 2010-12-15 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置及びその駆動方法
US8730416B2 (en) 2010-12-17 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2012142562A (ja) 2010-12-17 2012-07-26 Semiconductor Energy Lab Co Ltd 半導体記憶装置
US9202822B2 (en) 2010-12-17 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8894825B2 (en) 2010-12-17 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing the same, manufacturing semiconductor device
KR20130065730A (ko) * 2010-12-20 2013-06-19 샤프 가부시키가이샤 증착 방법 및 증착 장치
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
CN103238374B (zh) * 2010-12-27 2015-06-24 夏普株式会社 蒸镀装置、蒸镀方法和有机el显示装置
JP5731369B2 (ja) 2010-12-28 2015-06-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9443984B2 (en) 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5973165B2 (ja) 2010-12-28 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
WO2012090799A1 (en) 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8941112B2 (en) 2010-12-28 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6030298B2 (ja) 2010-12-28 2016-11-24 株式会社半導体エネルギー研究所 緩衝記憶装置及び信号処理回路
JP5993141B2 (ja) 2010-12-28 2016-09-14 株式会社半導体エネルギー研究所 記憶装置
JP5852874B2 (ja) 2010-12-28 2016-02-03 株式会社半導体エネルギー研究所 半導体装置
JP5975635B2 (ja) 2010-12-28 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
JP5864054B2 (ja) 2010-12-28 2016-02-17 株式会社半導体エネルギー研究所 半導体装置
US8883556B2 (en) 2010-12-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9048142B2 (en) 2010-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2012151453A (ja) 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法
TWI621121B (zh) 2011-01-05 2018-04-11 Semiconductor Energy Laboratory Co., Ltd. 儲存元件、儲存裝置、及信號處理電路
TWI570809B (zh) 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8536571B2 (en) 2011-01-12 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8921948B2 (en) 2011-01-12 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5982125B2 (ja) 2011-01-12 2016-08-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI535032B (zh) 2011-01-12 2016-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8575678B2 (en) 2011-01-13 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device with floating gate
US8421071B2 (en) 2011-01-13 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Memory device
JP5859839B2 (ja) 2011-01-14 2016-02-16 株式会社半導体エネルギー研究所 記憶素子の駆動方法、及び、記憶素子
TWI657565B (zh) 2011-01-14 2019-04-21 日商半導體能源研究所股份有限公司 半導體記憶裝置
KR102026718B1 (ko) 2011-01-14 2019-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억장치, 반도체 장치, 검출 방법
JP5897910B2 (ja) 2011-01-20 2016-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2012102182A1 (en) 2011-01-26 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5798933B2 (ja) 2011-01-26 2015-10-21 株式会社半導体エネルギー研究所 信号処理回路
TWI539597B (zh) 2011-01-26 2016-06-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
CN103348464B (zh) 2011-01-26 2016-01-13 株式会社半导体能源研究所 半导体装置及其制造方法
US9601178B2 (en) 2011-01-26 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
TWI602303B (zh) 2011-01-26 2017-10-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI570920B (zh) 2011-01-26 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR20130140824A (ko) 2011-01-27 2013-12-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI525619B (zh) 2011-01-27 2016-03-11 半導體能源研究所股份有限公司 記憶體電路
WO2012102281A1 (en) * 2011-01-28 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8634230B2 (en) 2011-01-28 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9494829B2 (en) 2011-01-28 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device containing the same
KR102233959B1 (ko) 2011-01-28 2021-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법 및 반도체 장치
US8780614B2 (en) 2011-02-02 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
TWI520273B (zh) 2011-02-02 2016-02-01 半導體能源研究所股份有限公司 半導體儲存裝置
US8513773B2 (en) 2011-02-02 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Capacitor and semiconductor device including dielectric and N-type semiconductor
US9799773B2 (en) 2011-02-02 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US9431400B2 (en) 2011-02-08 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for manufacturing the same
US8787083B2 (en) 2011-02-10 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Memory circuit
JP5969216B2 (ja) 2011-02-11 2016-08-17 株式会社半導体エネルギー研究所 発光素子、表示装置、照明装置、及びこれらの作製方法
US9167234B2 (en) 2011-02-14 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101899880B1 (ko) 2011-02-17 2018-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 ｌｓｉ
US8975680B2 (en) 2011-02-17 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method manufacturing semiconductor memory device
US8643007B2 (en) 2011-02-23 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8709920B2 (en) 2011-02-24 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9443455B2 (en) 2011-02-25 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Display device having a plurality of pixels
US9691772B2 (en) 2011-03-03 2017-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including memory cell which includes transistor and capacitor
US8659015B2 (en) 2011-03-04 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5898527B2 (ja) 2011-03-04 2016-04-06 株式会社半導体エネルギー研究所 半導体装置
US9023684B2 (en) 2011-03-04 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8785933B2 (en) 2011-03-04 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9646829B2 (en) 2011-03-04 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8841664B2 (en) 2011-03-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8659957B2 (en) 2011-03-07 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
JP5827145B2 (ja) 2011-03-08 2015-12-02 株式会社半導体エネルギー研究所 信号処理回路
US9099437B2 (en) 2011-03-08 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8625085B2 (en) 2011-03-08 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Defect evaluation method for semiconductor
US8772849B2 (en) 2011-03-10 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2012121265A1 (en) 2011-03-10 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for manufacturing the same
US8541781B2 (en) 2011-03-10 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI521612B (zh) 2011-03-11 2016-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8760903B2 (en) 2011-03-11 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Storage circuit
TWI658516B (zh) 2011-03-11 2019-05-01 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
JP2012209543A (ja) 2011-03-11 2012-10-25 Semiconductor Energy Lab Co Ltd 半導体装置
JP5902515B2 (ja) 2011-03-14 2016-04-13 株式会社半導体エネルギー研究所 連続成膜装置及び連続成膜方法
JP5933300B2 (ja) 2011-03-16 2016-06-08 株式会社半導体エネルギー研究所 半導体装置
KR101900525B1 (ko) 2011-03-18 2018-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막, 반도체 장치, 및 반도체 장치의 제작 방법
JP5933897B2 (ja) 2011-03-18 2016-06-15 株式会社半導体エネルギー研究所 半導体装置
US8859330B2 (en) 2011-03-23 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5839474B2 (ja) 2011-03-24 2016-01-06 株式会社半導体エネルギー研究所 信号処理回路
TWI597842B (zh) 2011-03-25 2017-09-01 半導體能源研究所股份有限公司 場效電晶體及包含該場效電晶體之記憶體與半導體電路
US9012904B2 (en) 2011-03-25 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8956944B2 (en) 2011-03-25 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9219159B2 (en) 2011-03-25 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
TWI545652B (zh) 2011-03-25 2016-08-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8987728B2 (en) 2011-03-25 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US8686416B2 (en) 2011-03-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP6053098B2 (ja) 2011-03-28 2016-12-27 株式会社半導体エネルギー研究所 半導体装置
US8927329B2 (en) 2011-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device with improved electronic properties
JP5879165B2 (ja) 2011-03-30 2016-03-08 株式会社半導体エネルギー研究所 半導体装置
US8686486B2 (en) 2011-03-31 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Memory device
TWI567735B (zh) 2011-03-31 2017-01-21 半導體能源研究所股份有限公司 記憶體電路，記憶體單元，及訊號處理電路
US9082860B2 (en) 2011-03-31 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8541266B2 (en) 2011-04-01 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5982147B2 (ja) 2011-04-01 2016-08-31 株式会社半導体エネルギー研究所 発光装置
US9960278B2 (en) 2011-04-06 2018-05-01 Yuhei Sato Manufacturing method of semiconductor device
US9012905B2 (en) 2011-04-08 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
US9093538B2 (en) 2011-04-08 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8743590B2 (en) 2011-04-08 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device using the same
US9142320B2 (en) 2011-04-08 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
JP5883699B2 (ja) 2011-04-13 2016-03-15 株式会社半導体エネルギー研究所 プログラマブルｌｓｉ
US8854867B2 (en) 2011-04-13 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method of the memory device
US9478668B2 (en) 2011-04-13 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US8878270B2 (en) 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8779488B2 (en) 2011-04-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8878174B2 (en) 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit
US9070776B2 (en) 2011-04-15 2015-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP6001900B2 (ja) 2011-04-21 2016-10-05 株式会社半導体エネルギー研究所 信号処理回路
JP5946683B2 (ja) 2011-04-22 2016-07-06 株式会社半導体エネルギー研究所 半導体装置
US9006803B2 (en) 2011-04-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US8916868B2 (en) 2011-04-22 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8878288B2 (en) 2011-04-22 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8809854B2 (en) 2011-04-22 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9331206B2 (en) 2011-04-22 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Oxide material and semiconductor device
TWI548057B (zh) 2011-04-22 2016-09-01 半導體能源研究所股份有限公司 半導體裝置
US8932913B2 (en) 2011-04-22 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US10079053B2 (en) 2011-04-22 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Memory element and memory device
CN102760697B (zh) 2011-04-27 2016-08-03 株式会社半导体能源研究所 半导体装置的制造方法
US8729545B2 (en) 2011-04-28 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8681533B2 (en) 2011-04-28 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Memory circuit, signal processing circuit, and electronic device
US9935622B2 (en) 2011-04-28 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Comparator and semiconductor device including comparator
KR101919056B1 (ko) 2011-04-28 2018-11-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 회로
US9111795B2 (en) 2011-04-29 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor connected to memory element through oxide semiconductor film
KR101963457B1 (ko) 2011-04-29 2019-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치 및 그 구동 방법
TWI525615B (zh) 2011-04-29 2016-03-11 半導體能源研究所股份有限公司 半導體儲存裝置
US8446171B2 (en) 2011-04-29 2013-05-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing unit
US8476927B2 (en) 2011-04-29 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8785923B2 (en) 2011-04-29 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8848464B2 (en) 2011-04-29 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US9614094B2 (en) 2011-04-29 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer and method for driving the same
TWI654762B (zh) 2011-05-05 2019-03-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
WO2012153697A1 (en) 2011-05-06 2012-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
TWI568181B (zh) 2011-05-06 2017-01-21 半導體能源研究所股份有限公司 邏輯電路及半導體裝置
US8809928B2 (en) 2011-05-06 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and method for manufacturing the semiconductor device
US8709922B2 (en) 2011-05-06 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012153473A1 (en) 2011-05-06 2012-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9117701B2 (en) 2011-05-06 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9443844B2 (en) 2011-05-10 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Gain cell semiconductor memory device and driving method thereof
US8946066B2 (en) 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI541978B (zh) 2011-05-11 2016-07-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置之驅動方法
TWI557711B (zh) 2011-05-12 2016-11-11 半導體能源研究所股份有限公司 顯示裝置的驅動方法
US8847233B2 (en) 2011-05-12 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film
TWI536502B (zh) 2011-05-13 2016-06-01 半導體能源研究所股份有限公司 記憶體電路及電子裝置
JP5886127B2 (ja) 2011-05-13 2016-03-16 株式会社半導体エネルギー研究所 半導体装置
WO2012157472A1 (en) 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9093539B2 (en) 2011-05-13 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9048788B2 (en) 2011-05-13 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photoelectric conversion portion
US8897049B2 (en) 2011-05-13 2014-11-25 Semiconductor Energy Laboratories Co., Ltd. Semiconductor device and memory device including semiconductor device
US9105749B2 (en) 2011-05-13 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2012157463A1 (en) 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6109489B2 (ja) 2011-05-13 2017-04-05 株式会社半導体エネルギー研究所 Ｅｌ表示装置
JP5886128B2 (ja) 2011-05-13 2016-03-16 株式会社半導体エネルギー研究所 半導体装置
JP6110075B2 (ja) 2011-05-13 2017-04-05 株式会社半導体エネルギー研究所 表示装置
KR101952570B1 (ko) 2011-05-13 2019-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2012157532A1 (en) 2011-05-16 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
TWI570891B (zh) 2011-05-17 2017-02-11 半導體能源研究所股份有限公司 半導體裝置
US9673823B2 (en) 2011-05-18 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
TWI552150B (zh) 2011-05-18 2016-10-01 半導體能源研究所股份有限公司 半導體儲存裝置
KR102081792B1 (ko) 2011-05-19 2020-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 연산회로 및 연산회로의 구동방법
US8837203B2 (en) 2011-05-19 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101991735B1 (ko) 2011-05-19 2019-06-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
US8709889B2 (en) 2011-05-19 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and manufacturing method thereof
US8779799B2 (en) 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
US9117920B2 (en) 2011-05-19 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device using oxide semiconductor
KR102093909B1 (ko) 2011-05-19 2020-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 회로 및 회로의 구동 방법
US8581625B2 (en) 2011-05-19 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
JP5951351B2 (ja) 2011-05-20 2016-07-13 株式会社半導体エネルギー研究所 加算器及び全加算器
TWI614995B (zh) 2011-05-20 2018-02-11 半導體能源研究所股份有限公司 鎖相迴路及使用此鎖相迴路之半導體裝置
TWI570719B (zh) 2011-05-20 2017-02-11 半導體能源研究所股份有限公司 儲存裝置及信號處理電路
JP5886496B2 (ja) 2011-05-20 2016-03-16 株式会社半導体エネルギー研究所 半導体装置
JP5936908B2 (ja) 2011-05-20 2016-06-22 株式会社半導体エネルギー研究所 パリティビット出力回路およびパリティチェック回路
TWI501226B (zh) 2011-05-20 2015-09-21 Semiconductor Energy Lab 記憶體裝置及驅動記憶體裝置的方法
KR101922397B1 (ko) 2011-05-20 2018-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6013680B2 (ja) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
JP6091083B2 (ja) 2011-05-20 2017-03-08 株式会社半導体エネルギー研究所 記憶装置
TWI557739B (zh) 2011-05-20 2016-11-11 半導體能源研究所股份有限公司 半導體積體電路
US9336845B2 (en) 2011-05-20 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Register circuit including a volatile memory and a nonvolatile memory
JP6030334B2 (ja) 2011-05-20 2016-11-24 株式会社半導体エネルギー研究所 記憶装置
JP5820336B2 (ja) 2011-05-20 2015-11-24 株式会社半導体エネルギー研究所 半導体装置
TWI573136B (zh) 2011-05-20 2017-03-01 半導體能源研究所股份有限公司 儲存裝置及信號處理電路
US8508256B2 (en) 2011-05-20 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
JP5820335B2 (ja) 2011-05-20 2015-11-24 株式会社半導体エネルギー研究所 半導体装置
TWI559683B (zh) 2011-05-20 2016-11-21 半導體能源研究所股份有限公司 半導體積體電路
JP5892852B2 (ja) 2011-05-20 2016-03-23 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
JP6013682B2 (ja) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP5947099B2 (ja) 2011-05-20 2016-07-06 株式会社半導体エネルギー研究所 半導体装置
WO2012161059A1 (en) 2011-05-20 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
JP5754239B2 (ja) * 2011-05-24 2015-07-29 ソニー株式会社 半導体装置
US20120298998A1 (en) 2011-05-25 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
WO2012161003A1 (en) 2011-05-26 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Divider circuit and semiconductor device using the same
US9171840B2 (en) 2011-05-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8610482B2 (en) 2011-05-27 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Trimming circuit and method for driving trimming circuit
JP5912844B2 (ja) 2011-05-31 2016-04-27 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
US9467047B2 (en) 2011-05-31 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, power source circuit, and semiconductor device
US8669781B2 (en) 2011-05-31 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20140003315A (ko) 2011-06-08 2014-01-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟, 스퍼터링 타겟의 제조 방법 및 박막의 형성 방법
JP5890251B2 (ja) 2011-06-08 2016-03-22 株式会社半導体エネルギー研究所 通信方法
JP2013016243A (ja) 2011-06-09 2013-01-24 Semiconductor Energy Lab Co Ltd 記憶装置
US9112036B2 (en) 2011-06-10 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP6005401B2 (ja) 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6104522B2 (ja) 2011-06-10 2017-03-29 株式会社半導体エネルギー研究所 半導体装置
US8891285B2 (en) 2011-06-10 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8958263B2 (en) 2011-06-10 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9299852B2 (en) 2011-06-16 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8804405B2 (en) 2011-06-16 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
TWI575751B (zh) 2011-06-16 2017-03-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR20130007426A (ko) 2011-06-17 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8901554B2 (en) 2011-06-17 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including channel formation region including oxide semiconductor
KR20190039345A (ko) 2011-06-17 2019-04-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그의 제조 방법
US9099885B2 (en) 2011-06-17 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Wireless power feeding system
US9166055B2 (en) 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8673426B2 (en) 2011-06-29 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
US8878589B2 (en) 2011-06-30 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9130044B2 (en) 2011-07-01 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9490241B2 (en) 2011-07-08 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a first inverter and a second inverter
KR102014876B1 (ko) 2011-07-08 2019-08-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9214474B2 (en) 2011-07-08 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9496138B2 (en) 2011-07-08 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device
US8748886B2 (en) 2011-07-08 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9385238B2 (en) 2011-07-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Transistor using oxide semiconductor
TWI565067B (zh) 2011-07-08 2017-01-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9200952B2 (en) 2011-07-15 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photodetector and an analog arithmetic circuit
US8847220B2 (en) 2011-07-15 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8836626B2 (en) 2011-07-15 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
JP2013042117A (ja) 2011-07-15 2013-02-28 Semiconductor Energy Lab Co Ltd 半導体装置
US8946812B2 (en) 2011-07-21 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8716073B2 (en) 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device
JP6013685B2 (ja) 2011-07-22 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
US8643008B2 (en) 2011-07-22 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9012993B2 (en) 2011-07-22 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102449610B1 (ko) 2011-07-22 2022-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
US8718224B2 (en) 2011-08-05 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US8994019B2 (en) 2011-08-05 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6006572B2 (ja) 2011-08-18 2016-10-12 株式会社半導体エネルギー研究所 半導体装置
TWI575494B (zh) 2011-08-19 2017-03-21 半導體能源研究所股份有限公司 半導體裝置的驅動方法
JP6128775B2 (ja) 2011-08-19 2017-05-17 株式会社半導体エネルギー研究所 半導体装置
JP6116149B2 (ja) 2011-08-24 2017-04-19 株式会社半導体エネルギー研究所 半導体装置
TWI761910B (zh) 2011-08-29 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置
KR101821167B1 (ko) * 2011-08-30 2018-01-24 삼성디스플레이 주식회사 반사 구조를 갖는 전극을 포함하는 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
US9252279B2 (en) 2011-08-31 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9660092B2 (en) 2011-08-31 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor including oxygen release layer
JP6016532B2 (ja) 2011-09-07 2016-10-26 株式会社半導体エネルギー研究所 半導体装置
JP6050054B2 (ja) 2011-09-09 2016-12-21 株式会社半導体エネルギー研究所 半導体装置
US8802493B2 (en) 2011-09-13 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor device
JP5825744B2 (ja) 2011-09-15 2015-12-02 株式会社半導体エネルギー研究所 パワー絶縁ゲート型電界効果トランジスタ
US9082663B2 (en) 2011-09-16 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2013039126A1 (en) 2011-09-16 2013-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8952379B2 (en) 2011-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5832399B2 (ja) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 発光装置
CN103022012B (zh) 2011-09-21 2017-03-01 株式会社半导体能源研究所 半导体存储装置
WO2013042562A1 (en) 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013042643A1 (en) 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Photodetector and method for driving photodetector
US9431545B2 (en) 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8841675B2 (en) 2011-09-23 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Minute transistor
KR102108572B1 (ko) 2011-09-26 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP2013084333A (ja) 2011-09-28 2013-05-09 Semiconductor Energy Lab Co Ltd シフトレジスタ回路
KR101506303B1 (ko) 2011-09-29 2015-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제작 방법
KR20140056392A (ko) 2011-09-29 2014-05-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2013047629A1 (en) 2011-09-29 2013-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8716708B2 (en) 2011-09-29 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8982607B2 (en) 2011-09-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
JP5806905B2 (ja) 2011-09-30 2015-11-10 株式会社半導体エネルギー研究所 半導体装置
US20130087784A1 (en) 2011-10-05 2013-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2013093565A (ja) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd 半導体装置
JP6022880B2 (ja) 2011-10-07 2016-11-09 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP2013093561A (ja) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd 酸化物半導体膜及び半導体装置
US9018629B2 (en) 2011-10-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9287405B2 (en) 2011-10-13 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
JP5912394B2 (ja) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 半導体装置
JP6026839B2 (ja) 2011-10-13 2016-11-16 株式会社半導体エネルギー研究所 半導体装置
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US9117916B2 (en) 2011-10-13 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
IN2014DN03274A (enExample) 2011-10-14 2015-05-22 Semiconductor Energy Lab
KR20130040706A (ko) 2011-10-14 2013-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR20130043063A (ko) 2011-10-19 2013-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
TWI567985B (zh) 2011-10-21 2017-01-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP6045285B2 (ja) 2011-10-24 2016-12-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6226518B2 (ja) 2011-10-24 2017-11-08 株式会社半導体エネルギー研究所 半導体装置
KR101976212B1 (ko) 2011-10-24 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR20130046357A (ko) 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6082562B2 (ja) 2011-10-27 2017-02-15 株式会社半導体エネルギー研究所 半導体装置
KR20140086954A (ko) 2011-10-28 2014-07-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8604472B2 (en) 2011-11-09 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5933895B2 (ja) 2011-11-10 2016-06-15 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
US9082861B2 (en) 2011-11-11 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Transistor with oxide semiconductor channel having protective layer
US8796682B2 (en) 2011-11-11 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
CN103918025B (zh) 2011-11-11 2016-12-21 株式会社半导体能源研究所 信号线驱动电路以及液晶显示装置
JP6076038B2 (ja) 2011-11-11 2017-02-08 株式会社半導体エネルギー研究所 表示装置の作製方法
US8878177B2 (en) 2011-11-11 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP6122275B2 (ja) 2011-11-11 2017-04-26 株式会社半導体エネルギー研究所 表示装置
US8969130B2 (en) 2011-11-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof
KR20130055521A (ko) 2011-11-18 2013-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자, 및 반도체 소자의 제작 방법, 및 반도체 소자를 포함하는 반도체 장치
CN102394240B (zh) * 2011-11-18 2013-07-03 贵州大学 一种tft-led彩色阵列显示基板及其制造方法
JP6059968B2 (ja) 2011-11-25 2017-01-11 株式会社半導体エネルギー研究所 半導体装置、及び液晶表示装置
US8951899B2 (en) 2011-11-25 2015-02-10 Semiconductor Energy Laboratory Method for manufacturing semiconductor device
JP6099368B2 (ja) 2011-11-25 2017-03-22 株式会社半導体エネルギー研究所 記憶装置
US8962386B2 (en) 2011-11-25 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6125211B2 (ja) 2011-11-25 2017-05-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9057126B2 (en) 2011-11-29 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target and method for manufacturing semiconductor device
US9076871B2 (en) 2011-11-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102072244B1 (ko) 2011-11-30 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
TWI588910B (zh) 2011-11-30 2017-06-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
CN103137701B (zh) 2011-11-30 2018-01-19 株式会社半导体能源研究所 晶体管及半导体装置
TWI639150B (zh) 2011-11-30 2018-10-21 日商半導體能源研究所股份有限公司 半導體顯示裝置
US20130137232A1 (en) 2011-11-30 2013-05-30 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI621183B (zh) 2011-12-01 2018-04-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
WO2013080900A1 (en) 2011-12-02 2013-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2013137853A (ja) 2011-12-02 2013-07-11 Semiconductor Energy Lab Co Ltd 記憶装置および記憶装置の駆動方法
JP6050662B2 (ja) 2011-12-02 2016-12-21 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US9257422B2 (en) 2011-12-06 2016-02-09 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving signal processing circuit
JP6081171B2 (ja) 2011-12-09 2017-02-15 株式会社半導体エネルギー研究所 記憶装置
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
JP6105266B2 (ja) 2011-12-15 2017-03-29 株式会社半導体エネルギー研究所 記憶装置
WO2013089115A1 (en) 2011-12-15 2013-06-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2013149953A (ja) 2011-12-20 2013-08-01 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
US8785258B2 (en) 2011-12-20 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9055654B2 (en) 2011-12-22 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus and film formation method
US8748240B2 (en) 2011-12-22 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
JP2013130802A (ja) 2011-12-22 2013-07-04 Semiconductor Energy Lab Co Ltd 半導体装置、画像表示装置、記憶装置、及び電子機器
TWI580047B (zh) 2011-12-23 2017-04-21 半導體能源研究所股份有限公司 半導體裝置
US8704221B2 (en) 2011-12-23 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6012450B2 (ja) 2011-12-23 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
WO2013094547A1 (en) 2011-12-23 2013-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI569446B (zh) 2011-12-23 2017-02-01 半導體能源研究所股份有限公司 半導體元件、半導體元件的製造方法、及包含半導體元件的半導體裝置
JP6033071B2 (ja) 2011-12-23 2016-11-30 株式会社半導体エネルギー研究所 半導体装置
JP6053490B2 (ja) 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI580189B (zh) 2011-12-23 2017-04-21 半導體能源研究所股份有限公司 位準位移電路及半導體積體電路
WO2013099537A1 (en) 2011-12-26 2013-07-04 Semiconductor Energy Laboratory Co., Ltd. Motion recognition device
KR102100425B1 (ko) 2011-12-27 2020-04-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
TWI584383B (zh) 2011-12-27 2017-05-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102103913B1 (ko) 2012-01-10 2020-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8969867B2 (en) 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013168926A (ja) 2012-01-18 2013-08-29 Semiconductor Energy Lab Co Ltd 回路、センサ回路及びセンサ回路を用いた半導体装置
US9040981B2 (en) 2012-01-20 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9099560B2 (en) 2012-01-20 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20130187150A1 (en) 2012-01-20 2013-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9653614B2 (en) 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
SG10201605470SA (en) 2012-01-23 2016-08-30 Semiconductor Energy Lab Co Ltd Semiconductor device
KR102034911B1 (ko) 2012-01-25 2019-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US9006733B2 (en) 2012-01-26 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US8956912B2 (en) 2012-01-26 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6091905B2 (ja) 2012-01-26 2017-03-08 株式会社半導体エネルギー研究所 半導体装置
US9419146B2 (en) 2012-01-26 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI581431B (zh) 2012-01-26 2017-05-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
TW201332181A (zh) * 2012-01-27 2013-08-01 松下電器產業股份有限公司 有機電致發光元件製造裝置及有機電致發光元件之製造方法
TWI561951B (en) 2012-01-30 2016-12-11 Semiconductor Energy Lab Co Ltd Power supply circuit
TWI562361B (en) 2012-02-02 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device
KR102101167B1 (ko) 2012-02-03 2020-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9196741B2 (en) 2012-02-03 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9362417B2 (en) 2012-02-03 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916424B2 (en) 2012-02-07 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9859114B2 (en) 2012-02-08 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device with an oxygen-controlling insulating layer
US20130207111A1 (en) 2012-02-09 2013-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device
US9112037B2 (en) 2012-02-09 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6125850B2 (ja) 2012-02-09 2017-05-10 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP5981157B2 (ja) 2012-02-09 2016-08-31 株式会社半導体エネルギー研究所 半導体装置
US8817516B2 (en) 2012-02-17 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Memory circuit and semiconductor device
JP2014063557A (ja) 2012-02-24 2014-04-10 Semiconductor Energy Lab Co Ltd 記憶装置及び半導体装置
US20130221345A1 (en) 2012-02-28 2013-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6151530B2 (ja) 2012-02-29 2017-06-21 株式会社半導体エネルギー研究所 イメージセンサ、カメラ、及び監視システム
US8988152B2 (en) 2012-02-29 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9553200B2 (en) 2012-02-29 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9312257B2 (en) 2012-02-29 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8975917B2 (en) 2012-03-01 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
JP6046514B2 (ja) 2012-03-01 2016-12-14 株式会社半導体エネルギー研究所 半導体装置
JP2013183001A (ja) 2012-03-01 2013-09-12 Semiconductor Energy Lab Co Ltd 半導体装置
US9176571B2 (en) 2012-03-02 2015-11-03 Semiconductor Energy Laboratories Co., Ltd. Microprocessor and method for driving microprocessor
US9735280B2 (en) 2012-03-02 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film
US9287370B2 (en) 2012-03-02 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Memory device comprising a transistor including an oxide semiconductor and semiconductor device including the same
US8754693B2 (en) 2012-03-05 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Latch circuit and semiconductor device
JP6100559B2 (ja) 2012-03-05 2017-03-22 株式会社半導体エネルギー研究所 半導体記憶装置
US8995218B2 (en) 2012-03-07 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8981370B2 (en) 2012-03-08 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN104160295B (zh) 2012-03-09 2017-09-15 株式会社半导体能源研究所 半导体装置的驱动方法
WO2013137014A1 (en) 2012-03-13 2013-09-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for driving the same
JP6168795B2 (ja) 2012-03-14 2017-07-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9058892B2 (en) 2012-03-14 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and shift register
US9117409B2 (en) 2012-03-14 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device with transistor and capacitor discharging gate of driving electrode and oxide semiconductor layer
KR102108248B1 (ko) 2012-03-14 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막, 트랜지스터, 및 반도체 장치
US9541386B2 (en) 2012-03-21 2017-01-10 Semiconductor Energy Laboratory Co., Ltd. Distance measurement device and distance measurement system
US9324449B2 (en) 2012-03-28 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device
US9349849B2 (en) 2012-03-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the semiconductor device
JP6169376B2 (ja) 2012-03-28 2017-07-26 株式会社半導体エネルギー研究所 電池管理ユニット、保護回路、蓄電装置
US9786793B2 (en) 2012-03-29 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer including regions with different concentrations of resistance-reducing elements
KR102044725B1 (ko) 2012-03-29 2019-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전원 제어 장치
JP6139187B2 (ja) 2012-03-29 2017-05-31 株式会社半導体エネルギー研究所 半導体装置
JP2013229013A (ja) 2012-03-29 2013-11-07 Semiconductor Energy Lab Co Ltd アレイコントローラ及びストレージシステム
US8941113B2 (en) 2012-03-30 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
US8999773B2 (en) 2012-04-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Processing method of stacked-layer film and manufacturing method of semiconductor device
US8901556B2 (en) 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
US9793444B2 (en) 2012-04-06 2017-10-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP2013232885A (ja) 2012-04-06 2013-11-14 Semiconductor Energy Lab Co Ltd 半導体リレー
US9711110B2 (en) 2012-04-06 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Display device comprising grayscale conversion portion and display portion
JP5975907B2 (ja) 2012-04-11 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
US9276121B2 (en) 2012-04-12 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9208849B2 (en) 2012-04-12 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device, and electronic device
JP6059566B2 (ja) 2012-04-13 2017-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9030232B2 (en) 2012-04-13 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Isolator circuit and semiconductor device
JP6128906B2 (ja) 2012-04-13 2017-05-17 株式会社半導体エネルギー研究所 半導体装置
KR20230004930A (ko) 2012-04-13 2023-01-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6143423B2 (ja) 2012-04-16 2017-06-07 株式会社半導体エネルギー研究所 半導体装置の製造方法
JP6076612B2 (ja) 2012-04-17 2017-02-08 株式会社半導体エネルギー研究所 半導体装置
JP6001308B2 (ja) 2012-04-17 2016-10-05 株式会社半導体エネルギー研究所 半導体装置
US9029863B2 (en) 2012-04-20 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9219164B2 (en) 2012-04-20 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor channel
US9230683B2 (en) 2012-04-25 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9236408B2 (en) 2012-04-25 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including photodiode
US9006024B2 (en) 2012-04-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9331689B2 (en) 2012-04-27 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Power supply circuit and semiconductor device including the same
JP6199583B2 (ja) 2012-04-27 2017-09-20 株式会社半導体エネルギー研究所 半導体装置
US9285848B2 (en) 2012-04-27 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Power reception control device, power reception device, power transmission and reception system, and electronic device
US8860022B2 (en) 2012-04-27 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP6228381B2 (ja) 2012-04-30 2017-11-08 株式会社半導体エネルギー研究所 半導体装置
JP6100071B2 (ja) 2012-04-30 2017-03-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9048323B2 (en) 2012-04-30 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6035195B2 (ja) 2012-05-01 2016-11-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9703704B2 (en) 2012-05-01 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9007090B2 (en) 2012-05-01 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of driving semiconductor device
US8866510B2 (en) 2012-05-02 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102025722B1 (ko) 2012-05-02 2019-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 온도 센서 회로, 및 온도 센서 회로를 사용한 반도체 장치
KR101978932B1 (ko) 2012-05-02 2019-05-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그램 가능한 로직 디바이스
US9104395B2 (en) 2012-05-02 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Processor and driving method thereof
JP6243136B2 (ja) 2012-05-02 2017-12-06 株式会社半導体エネルギー研究所 スイッチングコンバータ
US9261943B2 (en) 2012-05-02 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP6227890B2 (ja) 2012-05-02 2017-11-08 株式会社半導体エネルギー研究所 信号処理回路および制御回路
KR20130125717A (ko) 2012-05-09 2013-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
KR102295737B1 (ko) 2012-05-10 2021-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스
KR102069158B1 (ko) 2012-05-10 2020-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 배선의 형성 방법, 반도체 장치, 및 반도체 장치의 제작 방법
KR102173074B1 (ko) 2012-05-10 2020-11-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
DE102013022449B3 (de) 2012-05-11 2019-11-07 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und elektronisches Gerät
KR102087443B1 (ko) 2012-05-11 2020-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
US8994891B2 (en) 2012-05-16 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and touch panel
US8929128B2 (en) 2012-05-17 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Storage device and writing method of the same
US9817032B2 (en) 2012-05-23 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Measurement device
KR102164990B1 (ko) 2012-05-25 2020-10-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 소자의 구동 방법
JP6250955B2 (ja) 2012-05-25 2017-12-20 株式会社半導体エネルギー研究所 半導体装置の駆動方法
CN104321967B (zh) 2012-05-25 2018-01-09 株式会社半导体能源研究所 可编程逻辑装置及半导体装置
JP2014003594A (ja) 2012-05-25 2014-01-09 Semiconductor Energy Lab Co Ltd 半導体装置及びその駆動方法
JP6050721B2 (ja) 2012-05-25 2016-12-21 株式会社半導体エネルギー研究所 半導体装置
US9147706B2 (en) 2012-05-29 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having sensor circuit having amplifier circuit
JP6377317B2 (ja) 2012-05-30 2018-08-22 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
WO2013179922A1 (en) 2012-05-31 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN107591316B (zh) 2012-05-31 2021-06-08 株式会社半导体能源研究所 半导体装置
JP6158588B2 (ja) 2012-05-31 2017-07-05 株式会社半導体エネルギー研究所 発光装置
US8995607B2 (en) 2012-05-31 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US8785928B2 (en) 2012-05-31 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9048265B2 (en) 2012-05-31 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising oxide semiconductor layer
US9916793B2 (en) 2012-06-01 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving the same
US9135182B2 (en) 2012-06-01 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Central processing unit and driving method thereof
US8872174B2 (en) 2012-06-01 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP6108960B2 (ja) 2012-06-01 2017-04-05 株式会社半導体エネルギー研究所 半導体装置、処理装置
WO2013180016A1 (en) 2012-06-01 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and alarm device
US9153699B2 (en) * 2012-06-15 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multiple oxide semiconductor layers
US8901557B2 (en) 2012-06-15 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
FR2992098A1 (fr) * 2012-06-19 2013-12-20 Commissariat Energie Atomique Dispositif optoelectronique organique et son procede de fabrication.
US9059219B2 (en) 2012-06-27 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR102082794B1 (ko) 2012-06-29 2020-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법, 및 표시 장치
KR102099445B1 (ko) 2012-06-29 2020-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR102161077B1 (ko) 2012-06-29 2020-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9742378B2 (en) 2012-06-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit and semiconductor device
KR20200019269A (ko) 2012-06-29 2020-02-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8873308B2 (en) 2012-06-29 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
US9083327B2 (en) 2012-07-06 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US9054678B2 (en) 2012-07-06 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP6310194B2 (ja) 2012-07-06 2018-04-11 株式会社半導体エネルギー研究所 半導体装置
KR102099262B1 (ko) 2012-07-11 2020-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치, 및 액정 표시 장치의 구동 방법
JP2014032399A (ja) 2012-07-13 2014-02-20 Semiconductor Energy Lab Co Ltd 液晶表示装置
JP6006558B2 (ja) 2012-07-17 2016-10-12 株式会社半導体エネルギー研究所 半導体装置及びその製造方法
KR102078213B1 (ko) 2012-07-20 2020-02-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
DE112013007837B3 (de) 2012-07-20 2023-08-17 Semiconductor Energy Laboratory Co., Ltd. Anzeigevorrichtung
JP6185311B2 (ja) 2012-07-20 2017-08-23 株式会社半導体エネルギー研究所 電源制御回路、及び信号処理回路
CN104488016B (zh) 2012-07-20 2018-08-10 株式会社半导体能源研究所 显示装置及具有该显示装置的电子设备
JP2014042004A (ja) 2012-07-26 2014-03-06 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
KR20140013931A (ko) 2012-07-26 2014-02-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
JP6224931B2 (ja) 2012-07-27 2017-11-01 株式会社半導体エネルギー研究所 半導体装置
JP2014045175A (ja) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd 半導体装置
JP6134598B2 (ja) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 半導体装置
WO2014021442A1 (en) 2012-08-03 2014-02-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor stacked film and semiconductor device
CN108054175A (zh) 2012-08-03 2018-05-18 株式会社半导体能源研究所 半导体装置
US9885108B2 (en) 2012-08-07 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming sputtering target
US10557192B2 (en) 2012-08-07 2020-02-11 Semiconductor Energy Laboratory Co., Ltd. Method for using sputtering target and method for forming oxide film
JP2014057296A (ja) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
US8937307B2 (en) 2012-08-10 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI581404B (zh) 2012-08-10 2017-05-01 半導體能源研究所股份有限公司 半導體裝置以及該半導體裝置的驅動方法
US9929276B2 (en) 2012-08-10 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9245958B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014057298A (ja) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
KR102171650B1 (ko) 2012-08-10 2020-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP6220597B2 (ja) 2012-08-10 2017-10-25 株式会社半導体エネルギー研究所 半導体装置
CN104584229B (zh) 2012-08-10 2018-05-15 株式会社半导体能源研究所 半导体装置及其制造方法
JP2014199899A (ja) 2012-08-10 2014-10-23 株式会社半導体エネルギー研究所 半導体装置
WO2014024808A1 (en) 2012-08-10 2014-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8872120B2 (en) 2012-08-23 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and method for driving the same
KR102069683B1 (ko) 2012-08-24 2020-01-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 방사선 검출 패널, 방사선 촬상 장치, 및 화상 진단 장치
KR20140029202A (ko) 2012-08-28 2014-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR102161078B1 (ko) 2012-08-28 2020-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제작 방법
US9625764B2 (en) 2012-08-28 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
DE102013216824B4 (de) 2012-08-28 2024-10-17 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
TWI611511B (zh) 2012-08-31 2018-01-11 半導體能源研究所股份有限公司 半導體裝置
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR102088865B1 (ko) 2012-09-03 2020-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 마이크로 컨트롤러
DE102013217278B4 (de) 2012-09-12 2017-03-30 Semiconductor Energy Laboratory Co., Ltd. Photodetektorschaltung, Bildgebungsvorrichtung und Verfahren zum Ansteuern einer Photodetektorschaltung
US8981372B2 (en) 2012-09-13 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
KR102400509B1 (ko) 2012-09-13 2022-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US9018624B2 (en) 2012-09-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
TWI644437B (zh) 2012-09-14 2018-12-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8927985B2 (en) 2012-09-20 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014046222A1 (en) 2012-09-24 2014-03-27 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI671910B (zh) 2012-09-24 2019-09-11 日商半導體能源研究所股份有限公司 半導體裝置
JP6351947B2 (ja) 2012-10-12 2018-07-04 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
KR102226090B1 (ko) 2012-10-12 2021-03-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법 및 반도체 장치의 제조 장치
TWI681233B (zh) 2012-10-12 2020-01-01 日商半導體能源研究所股份有限公司 液晶顯示裝置、觸控面板及液晶顯示裝置的製造方法
JP6290576B2 (ja) 2012-10-12 2018-03-07 株式会社半導体エネルギー研究所 液晶表示装置及びその駆動方法
KR102168987B1 (ko) 2012-10-17 2020-10-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 마이크로컨트롤러 및 그 제조 방법
JP2014082388A (ja) 2012-10-17 2014-05-08 Semiconductor Energy Lab Co Ltd 半導体装置
JP6283191B2 (ja) 2012-10-17 2018-02-21 株式会社半導体エネルギー研究所 半導体装置
JP6021586B2 (ja) 2012-10-17 2016-11-09 株式会社半導体エネルギー研究所 半導体装置
TWI591966B (zh) 2012-10-17 2017-07-11 半導體能源研究所股份有限公司 可編程邏輯裝置及可編程邏輯裝置的驅動方法
JP6059501B2 (ja) 2012-10-17 2017-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102227591B1 (ko) 2012-10-17 2021-03-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9166021B2 (en) 2012-10-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2014061762A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5951442B2 (ja) 2012-10-17 2016-07-13 株式会社半導体エネルギー研究所 半導体装置
WO2014061567A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
JP6204145B2 (ja) 2012-10-23 2017-09-27 株式会社半導体エネルギー研究所 半導体装置
TWI782259B (zh) 2012-10-24 2022-11-01 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9287411B2 (en) 2012-10-24 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102279459B1 (ko) 2012-10-24 2021-07-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2014065301A1 (en) 2012-10-24 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014065343A1 (en) 2012-10-24 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014065389A1 (en) 2012-10-25 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Central control system
JP6219562B2 (ja) 2012-10-30 2017-10-25 株式会社半導体エネルギー研究所 表示装置及び電子機器
TWI618075B (zh) 2012-11-06 2018-03-11 半導體能源研究所股份有限公司 半導體裝置及其驅動方法
IN2015DN03772A (enExample) 2012-11-08 2015-10-02 Semiconductor Energy Lab
TWI605593B (zh) 2012-11-15 2017-11-11 半導體能源研究所股份有限公司 半導體裝置
JP6220641B2 (ja) 2012-11-15 2017-10-25 株式会社半導体エネルギー研究所 半導体装置
TWI608616B (zh) 2012-11-15 2017-12-11 半導體能源研究所股份有限公司 半導體裝置
JP6317059B2 (ja) 2012-11-16 2018-04-25 株式会社半導体エネルギー研究所 半導体装置及び表示装置
TWI613813B (zh) 2012-11-16 2018-02-01 半導體能源研究所股份有限公司 半導體裝置
JP6285150B2 (ja) 2012-11-16 2018-02-28 株式会社半導体エネルギー研究所 半導体装置
TWI620323B (zh) 2012-11-16 2018-04-01 半導體能源研究所股份有限公司 半導體裝置
TWI882464B (zh) 2012-11-28 2025-05-01 日商半導體能源研究所股份有限公司 顯示裝置
WO2014084153A1 (en) 2012-11-28 2014-06-05 Semiconductor Energy Laboratory Co., Ltd. Display device
US9263531B2 (en) 2012-11-28 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, film formation method thereof, and semiconductor device
TWI627483B (zh) 2012-11-28 2018-06-21 半導體能源研究所股份有限公司 顯示裝置及電視接收機
US9412764B2 (en) 2012-11-28 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
CN108493253B (zh) 2012-11-30 2023-04-25 株式会社半导体能源研究所 半导体装置
US9594281B2 (en) 2012-11-30 2017-03-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2014110294A (ja) * 2012-11-30 2014-06-12 Panasonic Corp 真空加熱炉及び有機半導体素子の製造方法
US9153649B2 (en) 2012-11-30 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for evaluating semiconductor device
JP2014130336A (ja) 2012-11-30 2014-07-10 Semiconductor Energy Lab Co Ltd 表示装置
US9246011B2 (en) 2012-11-30 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI624949B (zh) 2012-11-30 2018-05-21 半導體能源研究所股份有限公司 半導體裝置
JP2014135478A (ja) 2012-12-03 2014-07-24 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP6320009B2 (ja) 2012-12-03 2018-05-09 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
KR102207028B1 (ko) 2012-12-03 2021-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102112364B1 (ko) 2012-12-06 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9577446B2 (en) 2012-12-13 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Power storage system and power storage device storing data for the identifying power storage device
TWI611419B (zh) 2012-12-24 2018-01-11 半導體能源研究所股份有限公司 可程式邏輯裝置及半導體裝置
KR102241249B1 (ko) 2012-12-25 2021-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 저항 소자, 표시 장치, 및 전자기기
WO2014103901A1 (en) 2012-12-25 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102798241B1 (ko) 2012-12-25 2025-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9905585B2 (en) 2012-12-25 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising capacitor
US9437273B2 (en) 2012-12-26 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6329762B2 (ja) 2012-12-28 2018-05-23 株式会社半導体エネルギー研究所 半導体装置
KR102495290B1 (ko) 2012-12-28 2023-02-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI607510B (zh) 2012-12-28 2017-12-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
KR102639256B1 (ko) 2012-12-28 2024-02-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제작 방법
US9316695B2 (en) 2012-12-28 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014143410A (ja) 2012-12-28 2014-08-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR102109166B1 (ko) * 2013-01-15 2020-05-12 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 구비하는 표시 기판
US9391096B2 (en) 2013-01-18 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI614813B (zh) 2013-01-21 2018-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP6223198B2 (ja) 2013-01-24 2017-11-01 株式会社半導体エネルギー研究所 半導体装置
US9466725B2 (en) 2013-01-24 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI619010B (zh) 2013-01-24 2018-03-21 半導體能源研究所股份有限公司 半導體裝置
US9190172B2 (en) 2013-01-24 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5807076B2 (ja) 2013-01-24 2015-11-10 株式会社半導体エネルギー研究所 半導体装置
US9076825B2 (en) 2013-01-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US8981374B2 (en) 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI593025B (zh) 2013-01-30 2017-07-21 半導體能源研究所股份有限公司 氧化物半導體層的處理方法
TWI618252B (zh) 2013-02-12 2018-03-11 半導體能源研究所股份有限公司 半導體裝置
KR102112367B1 (ko) 2013-02-12 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8952723B2 (en) 2013-02-13 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
KR102125593B1 (ko) 2013-02-13 2020-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 로직 디바이스 및 반도체 장치
US9190527B2 (en) 2013-02-13 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
US9231111B2 (en) 2013-02-13 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9318484B2 (en) 2013-02-20 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI611566B (zh) 2013-02-25 2018-01-11 半導體能源研究所股份有限公司 顯示裝置和電子裝置
US9293544B2 (en) 2013-02-26 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having buried channel structure
TWI612321B (zh) 2013-02-27 2018-01-21 半導體能源研究所股份有限公司 成像裝置
US9373711B2 (en) 2013-02-27 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI611567B (zh) 2013-02-27 2018-01-11 半導體能源研究所股份有限公司 半導體裝置、驅動電路及顯示裝置
JP2014195241A (ja) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd 半導体装置
JP6141777B2 (ja) 2013-02-28 2017-06-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102238682B1 (ko) 2013-02-28 2021-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
JP2014195243A (ja) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd 半導体装置
JP6250883B2 (ja) 2013-03-01 2017-12-20 株式会社半導体エネルギー研究所 半導体装置
US9647152B2 (en) 2013-03-01 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Sensor circuit and semiconductor device including sensor circuit
KR102153110B1 (ko) 2013-03-06 2020-09-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체막 및 반도체 장치
US9269315B2 (en) 2013-03-08 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8947121B2 (en) 2013-03-12 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
TWI644433B (zh) 2013-03-13 2018-12-11 半導體能源研究所股份有限公司 半導體裝置
JP2014199709A (ja) 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 記憶装置、半導体装置
KR20150128823A (ko) 2013-03-14 2015-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 구동 방법 및 반도체 장치
JP6283237B2 (ja) 2013-03-14 2018-02-21 株式会社半導体エネルギー研究所 半導体装置
KR102290247B1 (ko) 2013-03-14 2021-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
US9294075B2 (en) 2013-03-14 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6298662B2 (ja) 2013-03-14 2018-03-20 株式会社半導体エネルギー研究所 半導体装置
KR20150128820A (ko) 2013-03-14 2015-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 구동 방법 및 반도체 장치
TWI677193B (zh) 2013-03-15 2019-11-11 日商半導體能源研究所股份有限公司 半導體裝置
US9786350B2 (en) 2013-03-18 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9153650B2 (en) 2013-03-19 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor
US9577107B2 (en) 2013-03-19 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and method for forming oxide semiconductor film
US9007092B2 (en) 2013-03-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6093726B2 (ja) 2013-03-22 2017-03-08 株式会社半導体エネルギー研究所 半導体装置
JP6355374B2 (ja) 2013-03-22 2018-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10347769B2 (en) 2013-03-25 2019-07-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multi-layer source/drain electrodes
JP6272713B2 (ja) 2013-03-25 2018-01-31 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス及び半導体装置
WO2014157019A1 (en) 2013-03-25 2014-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6316630B2 (ja) 2013-03-26 2018-04-25 株式会社半導体エネルギー研究所 半導体装置
JP6376788B2 (ja) 2013-03-26 2018-08-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP6395409B2 (ja) 2013-03-27 2018-09-26 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2014209209A (ja) 2013-03-28 2014-11-06 株式会社半導体エネルギー研究所 表示装置
US9368636B2 (en) 2013-04-01 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device comprising a plurality of oxide semiconductor layers
KR102127235B1 (ko) * 2013-04-02 2020-06-29 엘지디스플레이 주식회사 디스플레이 장치의 박막 트랜지스터 기판과 이의 제조방법
JP6300589B2 (ja) 2013-04-04 2018-03-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9112460B2 (en) 2013-04-05 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Signal processing device
JP6198434B2 (ja) 2013-04-11 2017-09-20 株式会社半導体エネルギー研究所 表示装置及び電子機器
JP6224338B2 (ja) 2013-04-11 2017-11-01 株式会社半導体エネルギー研究所 半導体装置、表示装置及び半導体装置の作製方法
US10304859B2 (en) 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
TWI620324B (zh) 2013-04-12 2018-04-01 半導體能源研究所股份有限公司 半導體裝置
JP6280794B2 (ja) 2013-04-12 2018-02-14 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法
JP6333028B2 (ja) 2013-04-19 2018-05-30 株式会社半導体エネルギー研究所 記憶装置及び半導体装置
JP6456598B2 (ja) 2013-04-19 2019-01-23 株式会社半導体エネルギー研究所 表示装置
US9915848B2 (en) 2013-04-19 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
TWI647559B (zh) 2013-04-24 2019-01-11 Semiconductor Energy Laboratory Co., Ltd. 顯示裝置
US9893192B2 (en) 2013-04-24 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6396671B2 (ja) 2013-04-26 2018-09-26 株式会社半導体エネルギー研究所 半導体装置
JP6401483B2 (ja) 2013-04-26 2018-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI644434B (zh) 2013-04-29 2018-12-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI631711B (zh) 2013-05-01 2018-08-01 半導體能源研究所股份有限公司 半導體裝置
KR102222344B1 (ko) 2013-05-02 2021-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9882058B2 (en) 2013-05-03 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9231002B2 (en) 2013-05-03 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
CN105190902B (zh) 2013-05-09 2019-01-29 株式会社半导体能源研究所 半导体装置及其制造方法
US9246476B2 (en) 2013-05-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit
US9704894B2 (en) 2013-05-10 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Display device including pixel electrode including oxide
TWI621337B (zh) 2013-05-14 2018-04-11 半導體能源研究所股份有限公司 信號處理裝置
TWI639235B (zh) 2013-05-16 2018-10-21 半導體能源研究所股份有限公司 半導體裝置
TWI627751B (zh) 2013-05-16 2018-06-21 半導體能源研究所股份有限公司 半導體裝置
US9312392B2 (en) 2013-05-16 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI618058B (zh) 2013-05-16 2018-03-11 半導體能源研究所股份有限公司 半導體裝置
JP6298353B2 (ja) 2013-05-17 2018-03-20 株式会社半導体エネルギー研究所 半導体装置
US10032872B2 (en) 2013-05-17 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and apparatus for manufacturing semiconductor device
US9209795B2 (en) 2013-05-17 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Signal processing device and measuring method
US9172369B2 (en) 2013-05-17 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9754971B2 (en) 2013-05-18 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9343579B2 (en) 2013-05-20 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014188982A1 (en) 2013-05-20 2014-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9647125B2 (en) 2013-05-20 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
DE102014019794B4 (de) 2013-05-20 2024-10-24 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
US9293599B2 (en) 2013-05-20 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI664731B (zh) 2013-05-20 2019-07-01 半導體能源研究所股份有限公司 半導體裝置
KR102098795B1 (ko) 2013-05-20 2020-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2014188983A1 (en) 2013-05-21 2014-11-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and formation method thereof
US10416504B2 (en) 2013-05-21 2019-09-17 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR102070951B1 (ko) * 2013-05-23 2020-01-30 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조방법
JP6475424B2 (ja) 2013-06-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
TWI649606B (zh) 2013-06-05 2019-02-01 日商半導體能源研究所股份有限公司 顯示裝置及電子裝置
JP6400336B2 (ja) 2013-06-05 2018-10-03 株式会社半導体エネルギー研究所 半導体装置
US9806198B2 (en) 2013-06-05 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI624936B (zh) 2013-06-05 2018-05-21 半導體能源研究所股份有限公司 顯示裝置
JP2015195327A (ja) 2013-06-05 2015-11-05 株式会社半導体エネルギー研究所 半導体装置
US9773915B2 (en) 2013-06-11 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102282108B1 (ko) 2013-06-13 2021-07-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6368155B2 (ja) 2013-06-18 2018-08-01 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
US9035301B2 (en) 2013-06-19 2015-05-19 Semiconductor Energy Laboratory Co., Ltd. Imaging device
TWI652822B (zh) 2013-06-19 2019-03-01 日商半導體能源研究所股份有限公司 氧化物半導體膜及其形成方法
TWI633650B (zh) 2013-06-21 2018-08-21 半導體能源研究所股份有限公司 半導體裝置
JP6357363B2 (ja) 2013-06-26 2018-07-11 株式会社半導体エネルギー研究所 記憶装置
JP2015012048A (ja) 2013-06-27 2015-01-19 三菱電機株式会社 アクティブマトリクス基板およびその製造方法
KR102522133B1 (ko) 2013-06-27 2023-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TW201513128A (zh) 2013-07-05 2015-04-01 Semiconductor Energy Lab 半導體裝置
US9666697B2 (en) 2013-07-08 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device including an electron trap layer
US9312349B2 (en) 2013-07-08 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US20150008428A1 (en) 2013-07-08 2015-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9293480B2 (en) 2013-07-10 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
TWI622053B (zh) 2013-07-10 2018-04-21 半導體能源研究所股份有限公司 半導體裝置
JP6018607B2 (ja) 2013-07-12 2016-11-02 株式会社半導体エネルギー研究所 半導体装置
US9818763B2 (en) 2013-07-12 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing display device
JP6322503B2 (ja) 2013-07-16 2018-05-09 株式会社半導体エネルギー研究所 半導体装置
JP6516978B2 (ja) 2013-07-17 2019-05-22 株式会社半導体エネルギー研究所 半導体装置
US9443592B2 (en) 2013-07-18 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
TWI608523B (zh) 2013-07-19 2017-12-11 半導體能源研究所股份有限公司 Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device
US9395070B2 (en) 2013-07-19 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Support of flexible component and light-emitting device
US9379138B2 (en) 2013-07-19 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device with drive voltage dependent on external light intensity
TWI632688B (zh) 2013-07-25 2018-08-11 半導體能源研究所股份有限公司 半導體裝置以及半導體裝置的製造方法
TWI636309B (zh) 2013-07-25 2018-09-21 日商半導體能源研究所股份有限公司 液晶顯示裝置及電子裝置
US10529740B2 (en) 2013-07-25 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including semiconductor layer and conductive layer
TWI641208B (zh) 2013-07-26 2018-11-11 日商半導體能源研究所股份有限公司 直流對直流轉換器
JP6460592B2 (ja) 2013-07-31 2019-01-30 株式会社半導体エネルギー研究所 Ｄｃｄｃコンバータ、及び半導体装置
JP6410496B2 (ja) 2013-07-31 2018-10-24 株式会社半導体エネルギー研究所 マルチゲート構造のトランジスタ
US9343288B2 (en) 2013-07-31 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9496330B2 (en) 2013-08-02 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
TWI635750B (zh) 2013-08-02 2018-09-11 半導體能源研究所股份有限公司 攝像裝置以及其工作方法
JP2015053477A (ja) 2013-08-05 2015-03-19 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
JP6345023B2 (ja) 2013-08-07 2018-06-20 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
KR102304824B1 (ko) 2013-08-09 2021-09-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9601591B2 (en) 2013-08-09 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6329843B2 (ja) 2013-08-19 2018-05-23 株式会社半導体エネルギー研究所 半導体装置
US9374048B2 (en) 2013-08-20 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing device, and driving method and program thereof
TWI663820B (zh) 2013-08-21 2019-06-21 日商半導體能源研究所股份有限公司 電荷泵電路以及具備電荷泵電路的半導體裝置
KR102232133B1 (ko) 2013-08-22 2021-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9443987B2 (en) 2013-08-23 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102244553B1 (ko) 2013-08-23 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 용량 소자 및 반도체 장치
TWI708981B (zh) 2013-08-28 2020-11-01 日商半導體能源研究所股份有限公司 顯示裝置
WO2015030150A1 (en) 2013-08-30 2015-03-05 Semiconductor Energy Laboratory Co., Ltd. Storage circuit and semiconductor device
US9552767B2 (en) 2013-08-30 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9590109B2 (en) 2013-08-30 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9360564B2 (en) 2013-08-30 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Imaging device
JP6426402B2 (ja) 2013-08-30 2018-11-21 株式会社半導体エネルギー研究所 表示装置
JP6406926B2 (ja) 2013-09-04 2018-10-17 株式会社半導体エネルギー研究所 半導体装置
US9449853B2 (en) 2013-09-04 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising electron trap layer
US9607991B2 (en) 2013-09-05 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10008513B2 (en) 2013-09-05 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6345544B2 (ja) 2013-09-05 2018-06-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102294507B1 (ko) 2013-09-06 2021-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6401977B2 (ja) 2013-09-06 2018-10-10 株式会社半導体エネルギー研究所 半導体装置
US9590110B2 (en) 2013-09-10 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Ultraviolet light sensor circuit
TWI640014B (zh) 2013-09-11 2018-11-01 半導體能源研究所股份有限公司 記憶體裝置、半導體裝置及電子裝置
US9269822B2 (en) 2013-09-12 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9893194B2 (en) 2013-09-12 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6429540B2 (ja) 2013-09-13 2018-11-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI646690B (zh) 2013-09-13 2019-01-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102247678B1 (ko) 2013-09-13 2021-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US9716003B2 (en) 2013-09-13 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US9461126B2 (en) 2013-09-13 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Transistor, clocked inverter circuit, sequential circuit, and semiconductor device including sequential circuit
JP6467171B2 (ja) 2013-09-17 2019-02-06 株式会社半導体エネルギー研究所 半導体装置
JP6347704B2 (ja) 2013-09-18 2018-06-27 株式会社半導体エネルギー研究所 半導体装置
US9269915B2 (en) 2013-09-18 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI677989B (zh) 2013-09-19 2019-11-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015084418A (ja) 2013-09-23 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
JP6570817B2 (ja) 2013-09-23 2019-09-04 株式会社半導体エネルギー研究所 半導体装置
US9397153B2 (en) 2013-09-23 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6383616B2 (ja) 2013-09-25 2018-08-29 株式会社半導体エネルギー研究所 半導体装置
WO2015046025A1 (en) 2013-09-26 2015-04-02 Semiconductor Energy Laboratory Co., Ltd. Switch circuit, semiconductor device, and system
JP2015069806A (ja) * 2013-09-27 2015-04-13 株式会社ジャパンディスプレイ 有機エレクトロルミネッセンス表示装置の製造方法
JP6392603B2 (ja) 2013-09-27 2018-09-19 株式会社半導体エネルギー研究所 半導体装置
JP6581765B2 (ja) 2013-10-02 2019-09-25 株式会社半導体エネルギー研究所 ブートストラップ回路、およびブートストラップ回路を有する半導体装置
TWI457955B (zh) * 2013-10-04 2014-10-21 Univ Nat Kaohsiung 1St Univ Sc Flexible packaging of flexible wireless systems
JP6386323B2 (ja) 2013-10-04 2018-09-05 株式会社半導体エネルギー研究所 半導体装置
TW202431651A (zh) 2013-10-10 2024-08-01 日商半導體能源研究所股份有限公司 液晶顯示裝置
KR102183763B1 (ko) 2013-10-11 2020-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US9245593B2 (en) 2013-10-16 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for driving arithmetic processing unit
TWI621127B (zh) 2013-10-18 2018-04-11 半導體能源研究所股份有限公司 運算處理裝置及其驅動方法
TWI642170B (zh) 2013-10-18 2018-11-21 半導體能源研究所股份有限公司 顯示裝置及電子裝置
CN105659369B (zh) 2013-10-22 2019-10-22 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
DE102014220672A1 (de) 2013-10-22 2015-05-07 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
DE112014004839T5 (de) 2013-10-22 2016-07-07 Semiconductor Energy Laboratory Co., Ltd. Anzeigevorrichtung
US9276128B2 (en) 2013-10-22 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and etchant used for the same
KR102244460B1 (ko) 2013-10-22 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9455349B2 (en) 2013-10-22 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor with reduced impurity diffusion
JP2015179247A (ja) 2013-10-22 2015-10-08 株式会社半導体エネルギー研究所 表示装置
US9583516B2 (en) 2013-10-25 2017-02-28 Semiconductor Energy Laboratory Co., Ltd. Display device
JP6457239B2 (ja) 2013-10-31 2019-01-23 株式会社半導体エネルギー研究所 半導体装置
US9590111B2 (en) 2013-11-06 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP6440457B2 (ja) 2013-11-07 2018-12-19 株式会社半導体エネルギー研究所 半導体装置
JP6478562B2 (ja) 2013-11-07 2019-03-06 株式会社半導体エネルギー研究所 半導体装置
US9385054B2 (en) 2013-11-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing device and manufacturing method thereof
JP2015118724A (ja) 2013-11-13 2015-06-25 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の駆動方法
JP6393590B2 (ja) 2013-11-22 2018-09-19 株式会社半導体エネルギー研究所 半導体装置
JP6426437B2 (ja) 2013-11-22 2018-11-21 株式会社半導体エネルギー研究所 半導体装置
JP6486660B2 (ja) 2013-11-27 2019-03-20 株式会社半導体エネルギー研究所 表示装置
US9882014B2 (en) 2013-11-29 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20150155313A1 (en) 2013-11-29 2015-06-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2016001712A (ja) 2013-11-29 2016-01-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102220450B1 (ko) 2013-12-02 2021-02-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
CN106597697A (zh) 2013-12-02 2017-04-26 株式会社半导体能源研究所 显示装置及其制造方法
US9601634B2 (en) 2013-12-02 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9991392B2 (en) 2013-12-03 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2016027597A (ja) 2013-12-06 2016-02-18 株式会社半導体エネルギー研究所 半導体装置
US9349751B2 (en) 2013-12-12 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6537264B2 (ja) 2013-12-12 2019-07-03 株式会社半導体エネルギー研究所 半導体装置
TWI642186B (zh) 2013-12-18 2018-11-21 日商半導體能源研究所股份有限公司 半導體裝置
TWI721409B (zh) 2013-12-19 2021-03-11 日商半導體能源研究所股份有限公司 半導體裝置
US9379192B2 (en) 2013-12-20 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6444714B2 (ja) 2013-12-20 2018-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102283814B1 (ko) 2013-12-25 2021-07-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10468279B2 (en) 2013-12-26 2019-11-05 Kateeva, Inc. Apparatus and techniques for thermal treatment of electronic devices
US9960280B2 (en) 2013-12-26 2018-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI637484B (zh) 2013-12-26 2018-10-01 日商半導體能源研究所股份有限公司 半導體裝置
KR20220163502A (ko) 2013-12-26 2022-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6402017B2 (ja) 2013-12-26 2018-10-10 株式会社半導体エネルギー研究所 半導体装置
WO2015097596A1 (en) 2013-12-26 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102529174B1 (ko) 2013-12-27 2023-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9318618B2 (en) 2013-12-27 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20220046701A (ko) 2013-12-27 2022-04-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
JP6506961B2 (ja) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 液晶表示装置
US9577110B2 (en) 2013-12-27 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor and the display device including the semiconductor device
JP6488124B2 (ja) 2013-12-27 2019-03-20 株式会社半導体エネルギー研究所 半導体装置
US9349418B2 (en) 2013-12-27 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9397149B2 (en) 2013-12-27 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6506545B2 (ja) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 半導体装置
JP6444723B2 (ja) 2014-01-09 2018-12-26 株式会社半導体エネルギー研究所 装置
US9300292B2 (en) 2014-01-10 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Circuit including transistor
US9401432B2 (en) 2014-01-16 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9379713B2 (en) 2014-01-17 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Data processing device and driving method thereof
WO2015112454A1 (en) * 2014-01-21 2015-07-30 Kateeva, Inc. Apparatus and techniques for electronic device encapsulation
KR102306200B1 (ko) 2014-01-24 2021-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2015114476A1 (en) 2014-01-28 2015-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9929044B2 (en) 2014-01-30 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP6523695B2 (ja) 2014-02-05 2019-06-05 株式会社半導体エネルギー研究所 半導体装置
US9929279B2 (en) 2014-02-05 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI665778B (zh) 2014-02-05 2019-07-11 日商半導體能源研究所股份有限公司 半導體裝置、模組及電子裝置
US9443876B2 (en) 2014-02-05 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
US9721968B2 (en) 2014-02-06 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic appliance
WO2015118436A1 (en) 2014-02-07 2015-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, device, and electronic device
TWI658597B (zh) 2014-02-07 2019-05-01 日商半導體能源研究所股份有限公司 半導體裝置
JP6545970B2 (ja) 2014-02-07 2019-07-17 株式会社半導体エネルギー研究所 装置
US10055232B2 (en) 2014-02-07 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising memory circuit
JP2015165226A (ja) 2014-02-07 2015-09-17 株式会社半導体エネルギー研究所 装置
JP6534530B2 (ja) 2014-02-07 2019-06-26 株式会社半導体エネルギー研究所 半導体装置
TWI803431B (zh) 2014-02-11 2023-05-21 日商半導體能源研究所股份有限公司 顯示裝置及電子裝置
KR102317297B1 (ko) 2014-02-19 2021-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물, 반도체 장치, 모듈, 및 전자 장치
JP2015172991A (ja) 2014-02-21 2015-10-01 株式会社半導体エネルギー研究所 半導体装置、電子部品、及び電子機器
US9817040B2 (en) 2014-02-21 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Measuring method of low off-state current of transistor
CN118588742A (zh) 2014-02-21 2024-09-03 株式会社半导体能源研究所 半导体膜、晶体管、半导体装置、显示装置以及电子设备
US9294096B2 (en) 2014-02-28 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN112233982A (zh) 2014-02-28 2021-01-15 株式会社半导体能源研究所 半导体装置的制造方法
US9564535B2 (en) 2014-02-28 2017-02-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module
US10074576B2 (en) 2014-02-28 2018-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
KR102329066B1 (ko) 2014-02-28 2021-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법, 및 전자 기기
KR20150104518A (ko) 2014-03-05 2015-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레벨 시프터 회로
JP6474280B2 (ja) 2014-03-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
US9537478B2 (en) 2014-03-06 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10096489B2 (en) 2014-03-06 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9397637B2 (en) 2014-03-06 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Voltage controlled oscillator, semiconductor device, and electronic device
JP6625328B2 (ja) 2014-03-06 2019-12-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP6545976B2 (ja) 2014-03-07 2019-07-17 株式会社半導体エネルギー研究所 半導体装置
JP6585354B2 (ja) 2014-03-07 2019-10-02 株式会社半導体エネルギー研究所 半導体装置
WO2015132697A1 (en) 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9419622B2 (en) 2014-03-07 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9711536B2 (en) 2014-03-07 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
JP6442321B2 (ja) 2014-03-07 2018-12-19 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法、並びに電子機器
US9653611B2 (en) 2014-03-07 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015132694A1 (en) 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Touch sensor, touch panel, and manufacturing method of touch panel
KR102267237B1 (ko) 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
WO2015136413A1 (en) 2014-03-12 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9640669B2 (en) 2014-03-13 2017-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module
JP6677449B2 (ja) 2014-03-13 2020-04-08 株式会社半導体エネルギー研究所 半導体装置の駆動方法
KR102450562B1 (ko) 2014-03-13 2022-10-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
JP6525421B2 (ja) 2014-03-13 2019-06-05 株式会社半導体エネルギー研究所 半導体装置
JP6541376B2 (ja) 2014-03-13 2019-07-10 株式会社半導体エネルギー研究所 プログラマブルロジックデバイスの動作方法
US9324747B2 (en) 2014-03-13 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Imaging device
JP6560508B2 (ja) 2014-03-13 2019-08-14 株式会社半導体エネルギー研究所 半導体装置
US9299848B2 (en) 2014-03-14 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, RF tag, and electronic device
US9887212B2 (en) 2014-03-14 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP2015188071A (ja) 2014-03-14 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
SG11201606647PA (en) 2014-03-14 2016-09-29 Semiconductor Energy Lab Co Ltd Circuit system
US10361290B2 (en) 2014-03-14 2019-07-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising adding oxygen to buffer film and insulating film
JP6509596B2 (ja) 2014-03-18 2019-05-08 株式会社半導体エネルギー研究所 半導体装置
KR20160132982A (ko) 2014-03-18 2016-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
US9887291B2 (en) 2014-03-19 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, or the display module
US9842842B2 (en) 2014-03-19 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device and electronic device having the same
KR102398965B1 (ko) 2014-03-20 2022-05-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
TWI657488B (zh) 2014-03-20 2019-04-21 日商半導體能源研究所股份有限公司 半導體裝置、具有該半導體裝置的顯示裝置、具有該顯示裝置的顯示模組以及具有該半導體裝置、該顯示裝置和該顯示模組的電子裝置
KR102332469B1 (ko) 2014-03-28 2021-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터 및 반도체 장치
JP6487738B2 (ja) 2014-03-31 2019-03-20 株式会社半導体エネルギー研究所 半導体装置、電子部品
TWI767772B (zh) 2014-04-10 2022-06-11 日商半導體能源研究所股份有限公司 記憶體裝置及半導體裝置
US9674470B2 (en) 2014-04-11 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and method for driving electronic device
JP6541398B2 (ja) 2014-04-11 2019-07-10 株式会社半導体エネルギー研究所 半導体装置
TWI646782B (zh) 2014-04-11 2019-01-01 日商半導體能源研究所股份有限公司 保持電路、保持電路的驅動方法以及包括保持電路的半導體裝置
JP6635670B2 (ja) 2014-04-11 2020-01-29 株式会社半導体エネルギー研究所 半導体装置
KR102511325B1 (ko) 2014-04-18 2023-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 동작 방법
WO2015159179A1 (en) 2014-04-18 2015-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR102318728B1 (ko) 2014-04-18 2021-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 이를 가지는 표시 장치
JP6613044B2 (ja) 2014-04-22 2019-11-27 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
KR102380829B1 (ko) 2014-04-23 2022-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
JP6468686B2 (ja) 2014-04-25 2019-02-13 株式会社半導体エネルギー研究所 入出力装置
US9780226B2 (en) 2014-04-25 2017-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI643457B (zh) 2014-04-25 2018-12-01 日商半導體能源研究所股份有限公司 半導體裝置
KR102330412B1 (ko) 2014-04-25 2021-11-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
US10043913B2 (en) 2014-04-30 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor device, display device, module, and electronic device
US10656799B2 (en) 2014-05-02 2020-05-19 Semiconductor Energy Laboratory Co., Ltd. Display device and operation method thereof
TWI679624B (zh) 2014-05-02 2019-12-11 日商半導體能源研究所股份有限公司 半導體裝置
JP6537341B2 (ja) 2014-05-07 2019-07-03 株式会社半導体エネルギー研究所 半導体装置
KR102333604B1 (ko) 2014-05-15 2021-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이 반도체 장치를 포함하는 표시 장치
JP6612056B2 (ja) 2014-05-16 2019-11-27 株式会社半導体エネルギー研究所 撮像装置、及び監視装置
JP2015233130A (ja) 2014-05-16 2015-12-24 株式会社半導体エネルギー研究所 半導体基板および半導体装置の作製方法
JP6580863B2 (ja) 2014-05-22 2019-09-25 株式会社半導体エネルギー研究所 半導体装置、健康管理システム
JP6616102B2 (ja) 2014-05-23 2019-12-04 株式会社半導体エネルギー研究所 記憶装置及び電子機器
TWI672804B (zh) 2014-05-23 2019-09-21 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
US10020403B2 (en) 2014-05-27 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015181679A1 (en) * 2014-05-27 2015-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9874775B2 (en) 2014-05-28 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
KR102418666B1 (ko) 2014-05-29 2022-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 소자, 전자 기기, 촬상 소자의 구동 방법, 및 전자 기기의 구동 방법
JP6615490B2 (ja) 2014-05-29 2019-12-04 株式会社半導体エネルギー研究所 半導体装置及び電子機器
KR20150138026A (ko) 2014-05-29 2015-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6525722B2 (ja) 2014-05-29 2019-06-05 株式会社半導体エネルギー研究所 記憶装置、電子部品、及び電子機器
JP6653129B2 (ja) 2014-05-29 2020-02-26 株式会社半導体エネルギー研究所 記憶装置
TWI646658B (zh) 2014-05-30 2019-01-01 日商半導體能源研究所股份有限公司 半導體裝置
TWI663726B (zh) 2014-05-30 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置、模組及電子裝置
WO2015182000A1 (en) 2014-05-30 2015-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
JP6538426B2 (ja) 2014-05-30 2019-07-03 株式会社半導体エネルギー研究所 半導体装置及び電子機器
US9831238B2 (en) 2014-05-30 2017-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including insulating film having opening portion and conductive film in the opening portion
SG10201912585TA (en) 2014-05-30 2020-02-27 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
JP6537892B2 (ja) 2014-05-30 2019-07-03 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
KR102344782B1 (ko) 2014-06-13 2021-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 입력 장치 및 입출력 장치
KR102437450B1 (ko) 2014-06-13 2022-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치를 포함하는 전자 기기
JP2016015475A (ja) 2014-06-13 2016-01-28 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
TWI663733B (zh) 2014-06-18 2019-06-21 日商半導體能源研究所股份有限公司 電晶體及半導體裝置
KR20150146409A (ko) 2014-06-20 2015-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치, 입출력 장치, 및 전자 기기
TWI666776B (zh) 2014-06-20 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置以及包括該半導體裝置的顯示裝置
US9722090B2 (en) 2014-06-23 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including first gate oxide semiconductor film, and second gate
JP6545541B2 (ja) 2014-06-25 2019-07-17 株式会社半導体エネルギー研究所 撮像装置、監視装置、及び電子機器
US10002971B2 (en) 2014-07-03 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
US9647129B2 (en) 2014-07-04 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9729809B2 (en) 2014-07-11 2017-08-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device or electronic device
US9461179B2 (en) 2014-07-11 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor device (TFT) comprising stacked oxide semiconductor layers and having a surrounded channel structure
KR20220069118A (ko) 2014-07-15 2022-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치
JP6581825B2 (ja) 2014-07-18 2019-09-25 株式会社半導体エネルギー研究所 表示システム
JP2016029795A (ja) 2014-07-18 2016-03-03 株式会社半導体エネルギー研究所 半導体装置、撮像装置及び電子機器
US12364095B2 (en) 2014-07-24 2025-07-15 Universal Display Corporation Organic electroluminescent devices
KR102473574B1 (ko) * 2014-07-24 2022-12-01 유니버셜 디스플레이 코포레이션 향상층(들)을 갖는 oled 디바이스
KR102352633B1 (ko) 2014-07-25 2022-01-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발진 회로 및 그것을 포함하는 반도체 장치
US9312280B2 (en) 2014-07-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10115830B2 (en) 2014-07-29 2018-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
CN106537486B (zh) 2014-07-31 2020-09-15 株式会社半导体能源研究所 显示装置及电子装置
JP6555956B2 (ja) 2014-07-31 2019-08-07 株式会社半導体エネルギー研究所 撮像装置、監視装置、及び電子機器
US9705004B2 (en) 2014-08-01 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102245497B1 (ko) * 2014-08-08 2021-04-29 삼성디스플레이 주식회사 표시 기판 및 이의 제조 방법
JP6739150B2 (ja) 2014-08-08 2020-08-12 株式会社半導体エネルギー研究所 半導体装置、発振回路、位相同期回路及び電子機器
JP6652342B2 (ja) 2014-08-08 2020-02-19 株式会社半導体エネルギー研究所 半導体装置
JP6553444B2 (ja) 2014-08-08 2019-07-31 株式会社半導体エネルギー研究所 半導体装置
US10147747B2 (en) 2014-08-21 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
US10032888B2 (en) 2014-08-22 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and electronic appliance having semiconductor device
US10559667B2 (en) 2014-08-25 2020-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for measuring current of semiconductor device
KR102509203B1 (ko) 2014-08-29 2023-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 전자 기기
WO2016034983A1 (en) 2014-09-02 2016-03-10 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
KR102329498B1 (ko) 2014-09-04 2021-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9766517B2 (en) 2014-09-05 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Display device and display module
TW201614626A (en) 2014-09-05 2016-04-16 Semiconductor Energy Lab Display device and electronic device
JP6676316B2 (ja) 2014-09-12 2020-04-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9722091B2 (en) 2014-09-12 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR102513878B1 (ko) 2014-09-19 2023-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9401364B2 (en) 2014-09-19 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
KR20160034200A (ko) 2014-09-19 2016-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP2016066788A (ja) 2014-09-19 2016-04-28 株式会社半導体エネルギー研究所 半導体膜の評価方法および半導体装置の作製方法
US10071904B2 (en) 2014-09-25 2018-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
JP6633330B2 (ja) 2014-09-26 2020-01-22 株式会社半導体エネルギー研究所 半導体装置
JP2016111677A (ja) 2014-09-26 2016-06-20 株式会社半導体エネルギー研究所 半導体装置、無線センサ、及び電子機器
WO2016046685A1 (en) 2014-09-26 2016-03-31 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US10170055B2 (en) 2014-09-26 2019-01-01 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
US9450581B2 (en) 2014-09-30 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, semiconductor device, electronic component, and electronic device
WO2016055894A1 (en) 2014-10-06 2016-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9698170B2 (en) 2014-10-07 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
WO2016055903A1 (en) 2014-10-10 2016-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
CN112671388B (zh) 2014-10-10 2024-07-05 株式会社半导体能源研究所 逻辑电路、处理单元、电子构件以及电子设备
US9991393B2 (en) 2014-10-16 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, module, and electronic device
JP6645793B2 (ja) 2014-10-17 2020-02-14 株式会社半導体エネルギー研究所 半導体装置
WO2016063159A1 (en) 2014-10-20 2016-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof, module, and electronic device
US10068927B2 (en) 2014-10-23 2018-09-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
JP6615565B2 (ja) 2014-10-24 2019-12-04 株式会社半導体エネルギー研究所 半導体装置
US9704704B2 (en) 2014-10-28 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
WO2016067144A1 (en) 2014-10-28 2016-05-06 Semiconductor Energy Laboratory Co., Ltd. Display device, manufacturing method of display device, and electronic device
TWI652362B (zh) 2014-10-28 2019-03-01 日商半導體能源研究所股份有限公司 氧化物及其製造方法
JP6780927B2 (ja) 2014-10-31 2020-11-04 株式会社半導体エネルギー研究所 半導体装置
US10680017B2 (en) 2014-11-07 2020-06-09 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element including EL layer, electrode which has high reflectance and a high work function, display device, electronic device, and lighting device
US9548327B2 (en) 2014-11-10 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Imaging device having a selenium containing photoelectric conversion layer
US9584707B2 (en) 2014-11-10 2017-02-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
TWI711165B (zh) 2014-11-21 2020-11-21 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
US9438234B2 (en) 2014-11-21 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device including logic circuit
JP6563313B2 (ja) 2014-11-21 2019-08-21 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
TWI699897B (zh) 2014-11-21 2020-07-21 日商半導體能源研究所股份有限公司 半導體裝置
KR102799986B1 (ko) 2014-11-28 2025-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 모듈, 및 전자 기기
JP6647841B2 (ja) 2014-12-01 2020-02-14 株式会社半導体エネルギー研究所 酸化物の作製方法
US20160155849A1 (en) 2014-12-02 2016-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, module, and electronic device
US9768317B2 (en) 2014-12-08 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method of semiconductor device, and electronic device
JP6667267B2 (ja) 2014-12-08 2020-03-18 株式会社半導体エネルギー研究所 半導体装置
WO2016092427A1 (en) 2014-12-10 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6833315B2 (ja) 2014-12-10 2021-02-24 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US9773832B2 (en) 2014-12-10 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP6689062B2 (ja) 2014-12-10 2020-04-28 株式会社半導体エネルギー研究所 半導体装置
WO2016092416A1 (en) 2014-12-11 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and electronic device
JP2016116220A (ja) 2014-12-16 2016-06-23 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
JP6676354B2 (ja) 2014-12-16 2020-04-08 株式会社半導体エネルギー研究所 半導体装置
KR102581808B1 (ko) 2014-12-18 2023-09-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 센서 장치, 및 전자 기기
US10396210B2 (en) 2014-12-26 2019-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with stacked metal oxide and oxide semiconductor layers and display device including the semiconductor device
TWI686874B (zh) 2014-12-26 2020-03-01 日商半導體能源研究所股份有限公司 半導體裝置、顯示裝置、顯示模組、電子裝置、氧化物及氧化物的製造方法
KR20170101233A (ko) 2014-12-26 2017-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링용 타깃의 제작 방법
CN107111985B (zh) 2014-12-29 2020-09-18 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
US10522693B2 (en) 2015-01-16 2019-12-31 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
US9443564B2 (en) 2015-01-26 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
JP6857447B2 (ja) 2015-01-26 2021-04-14 株式会社半導体エネルギー研究所 半導体装置
US9954112B2 (en) 2015-01-26 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9647132B2 (en) 2015-01-30 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
TWI710124B (zh) 2015-01-30 2020-11-11 日商半導體能源研究所股份有限公司 成像裝置及電子裝置
CN107207252B (zh) 2015-02-02 2021-04-30 株式会社半导体能源研究所 氧化物及其制造方法
CN107210226B (zh) 2015-02-04 2020-12-22 株式会社半导体能源研究所 半导体装置的制造方法
TWI732383B (zh) 2015-02-06 2021-07-01 日商半導體能源研究所股份有限公司 裝置及其製造方法以及電子裝置
US9660100B2 (en) 2015-02-06 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6717604B2 (ja) 2015-02-09 2020-07-01 株式会社半導体エネルギー研究所 半導体装置、中央処理装置及び電子機器
US9954113B2 (en) 2015-02-09 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Transistor including oxide semiconductor, semiconductor device including the transistor, and electronic device including the transistor
TWI685113B (zh) 2015-02-11 2020-02-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
CN107210230B (zh) 2015-02-12 2022-02-11 株式会社半导体能源研究所 氧化物半导体膜及半导体装置
US9818880B2 (en) 2015-02-12 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP2016154225A (ja) 2015-02-12 2016-08-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP6758844B2 (ja) 2015-02-13 2020-09-23 株式会社半導体エネルギー研究所 表示装置
US10403646B2 (en) 2015-02-20 2019-09-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9489988B2 (en) 2015-02-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9991394B2 (en) 2015-02-20 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US9722092B2 (en) 2015-02-25 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a stacked metal oxide
JP6739185B2 (ja) 2015-02-26 2020-08-12 株式会社半導体エネルギー研究所 ストレージシステム、およびストレージ制御回路
US9653613B2 (en) 2015-02-27 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6744108B2 (ja) 2015-03-02 2020-08-19 株式会社半導体エネルギー研究所 トランジスタ、トランジスタの作製方法、半導体装置および電子機器
WO2016139560A1 (en) 2015-03-03 2016-09-09 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, semiconductor device including the oxide semiconductor film, and display device including the semiconductor device
TWI718125B (zh) 2015-03-03 2021-02-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
CN107408579B (zh) 2015-03-03 2021-04-02 株式会社半导体能源研究所 半导体装置、该半导体装置的制造方法或包括该半导体装置的显示装置
US9905700B2 (en) 2015-03-13 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or memory device and driving method thereof
KR102560862B1 (ko) 2015-03-17 2023-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 터치 패널
US10008609B2 (en) 2015-03-17 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, or display device including the same
US9964799B2 (en) 2015-03-17 2018-05-08 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, and electronic device
US9882061B2 (en) 2015-03-17 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2016177280A (ja) 2015-03-18 2016-10-06 株式会社半導体エネルギー研究所 表示装置および電子機器、並びに表示装置の駆動方法
US10147823B2 (en) 2015-03-19 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102582523B1 (ko) 2015-03-19 2023-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
JP6662665B2 (ja) 2015-03-19 2020-03-11 株式会社半導体エネルギー研究所 液晶表示装置及び該液晶表示装置を用いた電子機器
US9842938B2 (en) 2015-03-24 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including semiconductor device
US9634048B2 (en) 2015-03-24 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
KR20160114511A (ko) 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US10096715B2 (en) 2015-03-26 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and electronic device
US10429704B2 (en) 2015-03-26 2019-10-01 Semiconductor Energy Laboratory Co., Ltd. Display device, display module including the display device, and electronic device including the display device or the display module
US9806200B2 (en) 2015-03-27 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI695513B (zh) 2015-03-27 2020-06-01 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
JP6736321B2 (ja) 2015-03-27 2020-08-05 株式会社半導体エネルギー研究所 半導体装置の製造方法
TWI695415B (zh) 2015-03-30 2020-06-01 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
US9716852B2 (en) 2015-04-03 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Broadcast system
US10389961B2 (en) 2015-04-09 2019-08-20 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US10372274B2 (en) 2015-04-13 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and touch panel
CN113571588A (zh) 2015-04-13 2021-10-29 株式会社半导体能源研究所 半导体装置及其制造方法
US10056497B2 (en) 2015-04-15 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10460984B2 (en) 2015-04-15 2019-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating electrode and semiconductor device
US9916791B2 (en) 2015-04-16 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Display device, electronic device, and method for driving display device
US10192995B2 (en) 2015-04-28 2019-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10002970B2 (en) 2015-04-30 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method of the same, or display device including the same
US10671204B2 (en) 2015-05-04 2020-06-02 Semiconductor Energy Laboratory Co., Ltd. Touch panel and data processor
KR102549926B1 (ko) 2015-05-04 2023-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 반도체 장치의 제작 방법, 및 전자기기
JP6681780B2 (ja) 2015-05-07 2020-04-15 株式会社半導体エネルギー研究所 表示システムおよび電子機器
TWI693719B (zh) 2015-05-11 2020-05-11 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
DE102016207737A1 (de) 2015-05-11 2016-11-17 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung, Verfahren zum Herstellen der Halbleitervorrichtung, Reifen und beweglicher Gegenstand
JP6935171B2 (ja) 2015-05-14 2021-09-15 株式会社半導体エネルギー研究所 半導体装置
US11728356B2 (en) 2015-05-14 2023-08-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion element and imaging device
US9627034B2 (en) 2015-05-15 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Electronic device
KR20180010205A (ko) 2015-05-22 2018-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치
US9837547B2 (en) 2015-05-22 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide conductor and display device including the semiconductor device
KR102484903B1 (ko) * 2015-05-22 2023-01-06 엘지디스플레이 주식회사 유기발광소자 및 그 제조방법
JP6773453B2 (ja) 2015-05-26 2020-10-21 株式会社半導体エネルギー研究所 記憶装置及び電子機器
JP2016225614A (ja) 2015-05-26 2016-12-28 株式会社半導体エネルギー研究所 半導体装置
KR102540372B1 (ko) * 2015-05-28 2023-06-05 엘지디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
US10139663B2 (en) 2015-05-29 2018-11-27 Semiconductor Energy Laboratory Co., Ltd. Input/output device and electronic device
KR102553553B1 (ko) 2015-06-12 2023-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치, 및 그 동작 방법 및 전자 기기
WO2016203354A1 (en) 2015-06-19 2016-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
US9860465B2 (en) 2015-06-23 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US9935633B2 (en) 2015-06-30 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, semiconductor device, electronic component, and electronic device
US10290573B2 (en) 2015-07-02 2019-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9917209B2 (en) 2015-07-03 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including step of forming trench over semiconductor
WO2017006207A1 (en) 2015-07-08 2017-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2017022377A (ja) 2015-07-14 2017-01-26 株式会社半導体エネルギー研究所 半導体装置
US10501003B2 (en) 2015-07-17 2019-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, lighting device, and vehicle
US10985278B2 (en) 2015-07-21 2021-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US11189736B2 (en) 2015-07-24 2021-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US11024725B2 (en) 2015-07-24 2021-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including metal oxide film
US10978489B2 (en) 2015-07-24 2021-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display panel, method for manufacturing semiconductor device, method for manufacturing display panel, and information processing device
US10424671B2 (en) 2015-07-29 2019-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
KR102513517B1 (ko) 2015-07-30 2023-03-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
CN106409919A (zh) 2015-07-30 2017-02-15 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
US10585506B2 (en) 2015-07-30 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Display device with high visibility regardless of illuminance of external light
US9825177B2 (en) 2015-07-30 2017-11-21 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a semiconductor device using multiple etching mask
US9876946B2 (en) 2015-08-03 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US9911861B2 (en) 2015-08-03 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method of the same, and electronic device
JP6791661B2 (ja) 2015-08-07 2020-11-25 株式会社半導体エネルギー研究所 表示パネル
WO2017029576A1 (en) 2015-08-19 2017-02-23 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9786856B2 (en) * 2015-08-20 2017-10-10 Dpix, Llc Method of manufacturing an image sensor device
JP2017041877A (ja) 2015-08-21 2017-02-23 株式会社半導体エネルギー研究所 半導体装置、電子部品、および電子機器
US9666606B2 (en) 2015-08-21 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9773919B2 (en) 2015-08-26 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2017037564A1 (en) 2015-08-28 2017-03-09 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor, transistor, and semiconductor device
US9911756B2 (en) 2015-08-31 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor and electronic device surrounded by layer having assigned band gap to prevent electrostatic discharge damage
JP2017050537A (ja) 2015-08-31 2017-03-09 株式会社半導体エネルギー研究所 半導体装置
US9412590B1 (en) 2015-08-31 2016-08-09 United Microelectronics Corp. Manufacturing method of oxide semiconductor device
JP6807683B2 (ja) 2015-09-11 2021-01-06 株式会社半導体エネルギー研究所 入出力パネル
CN105161503B (zh) * 2015-09-15 2018-07-10 深圳市华星光电技术有限公司 非晶硅半导体tft背板结构
SG10201607278TA (en) 2015-09-18 2017-04-27 Semiconductor Energy Lab Co Ltd Semiconductor device and electronic device
JP2017063420A (ja) 2015-09-25 2017-03-30 株式会社半導体エネルギー研究所 半導体装置
KR20180063084A (ko) 2015-09-30 2018-06-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
WO2017064587A1 (en) 2015-10-12 2017-04-20 Semiconductor Energy Laboratory Co., Ltd. Display panel, input/output device, data processor, and method for manufacturing display panel
WO2017064590A1 (en) 2015-10-12 2017-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9852926B2 (en) 2015-10-20 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device
WO2017068490A1 (en) 2015-10-23 2017-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR102609997B1 (ko) 2015-10-23 2023-12-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 모듈 및 전자 기기
US10007161B2 (en) 2015-10-26 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Display device
SG10201608814YA (en) 2015-10-29 2017-05-30 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the semiconductor device
US9773787B2 (en) 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
US9741400B2 (en) 2015-11-05 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, and method for operating the semiconductor device
JP6796461B2 (ja) 2015-11-18 2020-12-09 株式会社半導体エネルギー研究所 半導体装置、コンピュータ及び電子機器
JP2018032839A (ja) 2015-12-11 2018-03-01 株式会社半導体エネルギー研究所 トランジスタ、回路、半導体装置、表示装置および電子機器
US10868045B2 (en) 2015-12-11 2020-12-15 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
JP2017112374A (ja) 2015-12-16 2017-06-22 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、および電子機器
CN108475491B (zh) 2015-12-18 2021-04-20 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
US20170179199A1 (en) * 2015-12-18 2017-06-22 Dpix, Llc Method of screen printing in manufacturing an image sensor device
US10177142B2 (en) 2015-12-25 2019-01-08 Semiconductor Energy Laboratory Co., Ltd. Circuit, logic circuit, processor, electronic component, and electronic device
KR102799414B1 (ko) 2015-12-28 2025-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치를 포함하는 표시 장치
JP6851814B2 (ja) 2015-12-29 2021-03-31 株式会社半導体エネルギー研究所 トランジスタ
JP2017135698A (ja) 2015-12-29 2017-08-03 株式会社半導体エネルギー研究所 半導体装置、コンピュータ及び電子機器
CN108473334B (zh) 2015-12-29 2021-03-12 株式会社半导体能源研究所 金属氧化物膜以及半导体装置
US10580798B2 (en) 2016-01-15 2020-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20240132126A (ko) 2016-01-18 2024-09-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 금속 산화물막, 반도체 장치, 및 표시 장치
JP6839986B2 (ja) 2016-01-20 2021-03-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6822853B2 (ja) 2016-01-21 2021-01-27 株式会社半導体エネルギー研究所 記憶装置及び記憶装置の駆動方法
US10411013B2 (en) 2016-01-22 2019-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
US9929217B2 (en) 2016-01-27 2018-03-27 Au Optronics Corporation Array substrate of display and method of manufacturing the same
US10700212B2 (en) 2016-01-28 2020-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof
US10115741B2 (en) 2016-02-05 2018-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10250247B2 (en) 2016-02-10 2019-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
KR102796428B1 (ko) 2016-02-12 2025-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 상기 반도체 장치를 포함하는 표시 장치
JP6970511B2 (ja) 2016-02-12 2021-11-24 株式会社半導体エネルギー研究所 トランジスタ
US9954003B2 (en) 2016-02-17 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2017149413A1 (en) 2016-03-04 2017-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN115954389A (zh) 2016-03-04 2023-04-11 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
US10263114B2 (en) 2016-03-04 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, or display device including the same
JP6904730B2 (ja) 2016-03-08 2021-07-21 株式会社半導体エネルギー研究所 撮像装置
US9882064B2 (en) 2016-03-10 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Transistor and electronic device
US10096720B2 (en) 2016-03-25 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
JP6668455B2 (ja) 2016-04-01 2020-03-18 株式会社半導体エネルギー研究所 酸化物半導体膜の作製方法
KR102651136B1 (ko) * 2016-04-12 2024-03-25 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
CN109074296B (zh) 2016-04-15 2023-09-12 株式会社半导体能源研究所 半导体装置、电子构件及电子设备
US10236875B2 (en) 2016-04-15 2019-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for operating the semiconductor device
WO2017199130A1 (en) 2016-05-19 2017-11-23 Semiconductor Energy Laboratory Co., Ltd. Composite oxide semiconductor and transistor
KR102296809B1 (ko) 2016-06-03 2021-08-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 금속 산화물 및 전계 효과 트랜지스터
KR102330605B1 (ko) 2016-06-22 2021-11-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9929215B2 (en) 2016-07-12 2018-03-27 Dpix, Llc Method of optimizing an interface for processing of an organic semiconductor
KR102573690B1 (ko) * 2016-09-30 2023-09-04 엘지디스플레이 주식회사 박막트랜지스터 어레이 기판 및 이를 포함하는 표시장치
US10411003B2 (en) 2016-10-14 2019-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10191345B2 (en) * 2016-11-01 2019-01-29 Innolux Corporation Display device
WO2018087631A1 (en) 2016-11-09 2018-05-17 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, electronic device, and method for manufacturing the display device
CN106374056A (zh) * 2016-11-28 2017-02-01 武汉华星光电技术有限公司 Qled显示面板制造方法及qled显示器
JP6986517B2 (ja) * 2016-12-21 2021-12-22 ソニーセミコンダクタソリューションズ株式会社 表示装置の製造方法
CN106898706A (zh) * 2017-02-24 2017-06-27 深圳市华星光电技术有限公司 发光二极管显示器及其制作方法
KR102400426B1 (ko) * 2017-07-24 2022-05-23 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
US10801101B2 (en) * 2017-08-17 2020-10-13 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Vapor evaporation source
JP6782211B2 (ja) * 2017-09-08 2020-11-11 株式会社東芝 透明電極、それを用いた素子、および素子の製造方法
US11714438B2 (en) 2018-01-24 2023-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
KR102560100B1 (ko) * 2018-03-08 2023-07-26 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
JP7293190B2 (ja) 2018-03-16 2023-06-19 株式会社半導体エネルギー研究所 半導体装置
CN108508643A (zh) * 2018-04-03 2018-09-07 京东方科技集团股份有限公司 显示基板及其制造方法、显示装置
CN108565360A (zh) * 2018-04-10 2018-09-21 深圳市华星光电技术有限公司 一种oled显示装置及其制备方法
JP7399857B2 (ja) 2018-07-10 2023-12-18 株式会社半導体エネルギー研究所 二次電池の保護回路
WO2020089733A1 (ja) 2018-11-02 2020-05-07 株式会社半導体エネルギー研究所 半導体装置
US12132334B2 (en) 2018-11-22 2024-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and battery pack
CN113196546A (zh) 2018-12-20 2021-07-30 株式会社半导体能源研究所 半导体装置及电池组
KR102720125B1 (ko) * 2018-12-27 2024-10-18 엘지디스플레이 주식회사 표시장치
CN113412438A (zh) * 2019-02-06 2021-09-17 株式会社半导体能源研究所 发光器件、发光装置、电子设备、显示装置及照明装置
US12040007B2 (en) 2019-04-26 2024-07-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2020229911A1 (ja) 2019-05-10 2020-11-19 株式会社半導体エネルギー研究所 表示装置および電子機器
KR102840468B1 (ko) * 2019-07-16 2025-07-29 삼성전자주식회사 반도체 장치
CN110444690B (zh) * 2019-08-20 2022-03-04 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置
US11296163B2 (en) * 2020-05-27 2022-04-05 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. OLED display panel and OLED display device
KR102734419B1 (ko) * 2020-07-03 2024-11-26 삼성디스플레이 주식회사 표시 장치
CN111785744A (zh) * 2020-08-27 2020-10-16 京东方科技集团股份有限公司 一种oled显示面板及其制备方法、显示装置
JP7242626B2 (ja) * 2020-12-10 2023-03-20 キヤノントッキ株式会社 成膜装置
US11756983B2 (en) 2020-12-10 2023-09-12 Massachusetts Institute Of Technology Silicon nano light emitting diodes
US11798880B2 (en) * 2021-09-27 2023-10-24 Innolux Corporation Electronic device and method of fabricating an electronic device
KR20230140716A (ko) * 2022-03-30 2023-10-10 엘지이노텍 주식회사 회로 기판, 반도체 패키지 및 이의 제조 방법
KR20240123503A (ko) 2023-02-07 2024-08-14 삼성중공업 주식회사 해양 구조물의 가스 감지시스템

Family Cites Families (148)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US641933A (en) * 1897-03-25 1900-01-23 John M Fisher Convertible hose-nozzle.
JPS60170972A (ja) 1984-02-15 1985-09-04 Sony Corp 薄膜半導体装置
JPH0719925B2 (ja) * 1985-03-05 1995-03-06 株式会社東芝 導電性薄膜
JPH0734221B2 (ja) 1986-06-17 1995-04-12 株式会社テック 光学読取装置
JPH0449173Y2 (enExample) * 1987-01-22 1992-11-19
JPH0734221A (ja) * 1993-07-20 1995-02-03 Shin Etsu Chem Co Ltd 薄膜形成方法
JP3384055B2 (ja) 1993-09-24 2003-03-10 株式会社ニコン 真空薄膜形成装置
US5786664A (en) 1995-03-27 1998-07-28 Youmin Liu Double-sided electroluminescent device
JPH09291359A (ja) * 1996-04-26 1997-11-11 Olympus Optical Co Ltd スパッタリング装置
US6462722B1 (en) 1997-02-17 2002-10-08 Seiko Epson Corporation Current-driven light-emitting display apparatus and method of producing the same
WO1999010862A1 (en) * 1997-08-21 1999-03-04 Seiko Epson Corporation Active matrix display
JP3980159B2 (ja) 1998-03-05 2007-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH11307264A (ja) * 1998-04-17 1999-11-05 Matsushita Electric Ind Co Ltd 有機電界発光素子
JPH11307259A (ja) 1998-04-23 1999-11-05 Tdk Corp 有機ｅｌ素子
JPH11339970A (ja) * 1998-05-26 1999-12-10 Tdk Corp 有機ｅｌ表示装置
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP2000330134A (ja) 1999-03-16 2000-11-30 Furontekku:Kk 薄膜トランジスタ基板および液晶表示装置
TW515109B (en) 1999-06-28 2002-12-21 Semiconductor Energy Lab EL display device and electronic device
JP4472073B2 (ja) 1999-09-03 2010-06-02 株式会社半導体エネルギー研究所 表示装置及びその作製方法
TW522453B (en) 1999-09-17 2003-03-01 Semiconductor Energy Lab Display device
US6641933B1 (en) 1999-09-24 2003-11-04 Semiconductor Energy Laboratory Co., Ltd. Light-emitting EL display device
JP4824848B2 (ja) * 2000-02-29 2011-11-30 淳二 城戸 有機エレクトロルミネッセント素子、有機エレクトロルミネッセント素子群及びその発光スペクトルの特定方法
TW474114B (en) 1999-09-29 2002-01-21 Junji Kido Organic electroluminescent device, organic electroluminescent device assembly and method of controlling the emission spectrum in the device
TW468283B (en) 1999-10-12 2001-12-11 Semiconductor Energy Lab EL display device and a method of manufacturing the same
US6384427B1 (en) 1999-10-29 2002-05-07 Semiconductor Energy Laboratory Co., Ltd. Electronic device
JP4727029B2 (ja) * 1999-11-29 2011-07-20 株式会社半導体エネルギー研究所 Ｅｌ表示装置、電気器具及びｅｌ表示装置用の半導体素子基板
US6921588B2 (en) * 1999-12-15 2005-07-26 Samsung Sdi Co., Ltd. Organic electroluminescent device having high luminance efficiency
TW490714B (en) * 1999-12-27 2002-06-11 Semiconductor Energy Lab Film formation apparatus and method for forming a film
TWI252592B (en) 2000-01-17 2006-04-01 Semiconductor Energy Lab EL display device
TW495812B (en) 2000-03-06 2002-07-21 Semiconductor Energy Lab Thin film forming device, method of forming a thin film, and self-light-emitting device
TW484238B (en) 2000-03-27 2002-04-21 Semiconductor Energy Lab Light emitting device and a method of manufacturing the same
JP4004709B2 (ja) 2000-03-30 2007-11-07 パイオニア株式会社 有機エレクトロルミネッセンス表示パネル及びその製造方法
TW531901B (en) 2000-04-27 2003-05-11 Semiconductor Energy Lab Light emitting device
US6515310B2 (en) 2000-05-06 2003-02-04 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electric apparatus
US6608449B2 (en) 2000-05-08 2003-08-19 Semiconductor Energy Laboratory Co., Ltd. Luminescent apparatus and method of manufacturing the same
US6692845B2 (en) 2000-05-12 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US7517551B2 (en) * 2000-05-12 2009-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a light-emitting device
KR100623989B1 (ko) 2000-05-23 2006-09-13 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판 및 그의 수리 방법
EP1167566B1 (en) 2000-06-22 2011-01-26 Panasonic Electric Works Co., Ltd. Apparatus for and method of vacuum vapor deposition
JP3742567B2 (ja) * 2000-06-22 2006-02-08 松下電工株式会社 真空蒸着装置及び真空蒸着方法
US6956324B2 (en) 2000-08-04 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
US6605826B2 (en) 2000-08-18 2003-08-12 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and display device
US6739931B2 (en) 2000-09-18 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating the display device
JP4954366B2 (ja) 2000-11-28 2012-06-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4101522B2 (ja) 2001-02-01 2008-06-18 株式会社半導体エネルギー研究所 成膜装置及び成膜方法
US20020139303A1 (en) 2001-02-01 2002-10-03 Shunpei Yamazaki Deposition apparatus and deposition method
JP4906018B2 (ja) * 2001-03-12 2012-03-28 株式会社半導体エネルギー研究所 成膜方法、発光装置の作製方法及び成膜装置
JP4801278B2 (ja) 2001-04-23 2011-10-26 株式会社半導体エネルギー研究所 発光装置及びその作製方法
TW587399B (en) * 2001-08-31 2004-05-11 Sanyo Electric Co Method for making electroluminescene (EL) display panel and vapor deposition mask
US6852997B2 (en) * 2001-10-30 2005-02-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
WO2003040441A1 (fr) 2001-11-05 2003-05-15 Japan Science And Technology Agency Film mince monocristallin homologue a super-reseau naturel, procede de preparation et dispositif dans lequel est utilise ledit film mince monocristallin
SG114589A1 (en) 2001-12-12 2005-09-28 Semiconductor Energy Lab Film formation apparatus and film formation method and cleaning method
JP4294305B2 (ja) 2001-12-12 2009-07-08 株式会社半導体エネルギー研究所 成膜装置および成膜方法
KR100474891B1 (ko) * 2001-12-20 2005-03-08 엘지전자 주식회사 유기 ｅｌ 디스플레이 소자
JP4101511B2 (ja) 2001-12-27 2008-06-18 株式会社半導体エネルギー研究所 発光装置及びその作製方法
JP3754380B2 (ja) 2002-02-06 2006-03-08 株式会社エイコー・エンジニアリング 薄膜堆積用分子線源セルと薄膜堆積方法
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
JP4558277B2 (ja) * 2002-02-22 2010-10-06 株式会社半導体エネルギー研究所 発光装置の作製方法
TWI285515B (en) * 2002-02-22 2007-08-11 Semiconductor Energy Lab Light-emitting device and method of manufacturing the same, and method of operating manufacturing apparatus
SG113448A1 (en) 2002-02-25 2005-08-29 Semiconductor Energy Lab Fabrication system and a fabrication method of a light emitting device
JP3877613B2 (ja) 2002-03-05 2007-02-07 三洋電機株式会社 有機エレクトロルミネッセンス表示装置の製造方法
CN1445821A (zh) 2002-03-15 2003-10-01 三洋电机株式会社 ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法
EP1369499A3 (en) 2002-04-15 2004-10-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device
JP4156431B2 (ja) 2002-04-23 2008-09-24 株式会社半導体エネルギー研究所 発光装置およびその作製方法
US7579771B2 (en) 2002-04-23 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US7786496B2 (en) 2002-04-24 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
JP2003317971A (ja) 2002-04-26 2003-11-07 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
TWI336905B (en) 2002-05-17 2011-02-01 Semiconductor Energy Lab Evaporation method, evaporation device and method of fabricating light emitting device
US20040035360A1 (en) 2002-05-17 2004-02-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
TWI255432B (en) * 2002-06-03 2006-05-21 Lg Philips Lcd Co Ltd Active matrix organic electroluminescent display device and fabricating method thereof
JP4401688B2 (ja) 2002-06-07 2010-01-20 株式会社半導体エネルギー研究所 発光装置およびその作製方法、並びに電子機器
US7897979B2 (en) 2002-06-07 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
JP2004014946A (ja) * 2002-06-10 2004-01-15 Toyota Industries Corp 半導体装置の製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
JP4216008B2 (ja) 2002-06-27 2009-01-28 株式会社半導体エネルギー研究所 発光装置およびその作製方法、ならびに前記発光装置を有するビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、カーナビゲーション、パーソナルコンピュータ、ｄｖｄプレーヤー、電子遊技機器、または携帯情報端末
JP4139158B2 (ja) * 2002-07-26 2008-08-27 松下電工株式会社 真空蒸着方法
TWI277363B (en) 2002-08-30 2007-03-21 Semiconductor Energy Lab Fabrication system, light-emitting device and fabricating method of organic compound-containing layer
TWI252706B (en) 2002-09-05 2006-04-01 Sanyo Electric Co Manufacturing method of organic electroluminescent display device
JP2004103269A (ja) 2002-09-05 2004-04-02 Sanyo Electric Co Ltd 有機ｅｌ表示装置の製造方法
CN100466285C (zh) 2002-09-11 2009-03-04 株式会社半导体能源研究所 发光装置及其制造方法
JP2004127933A (ja) 2002-09-11 2004-04-22 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
US20040054867A1 (en) * 2002-09-13 2004-03-18 Paulus Stravers Translation lookaside buffer
JP4156891B2 (ja) 2002-09-20 2008-09-24 株式会社アルバック 薄膜形成装置
JP2004149846A (ja) 2002-10-30 2004-05-27 Sony Corp 蒸着装置および有機電界発光素子の製造装置
JP2004169066A (ja) 2002-11-18 2004-06-17 Sony Corp 蒸着装置
JP4711595B2 (ja) 2002-12-10 2011-06-29 株式会社半導体エネルギー研究所 Ｅｌディスプレイ及び電子機器
JP4519651B2 (ja) * 2002-12-19 2010-08-04 株式会社半導体エネルギー研究所 発光装置及びその作製方法
JP4373086B2 (ja) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 発光装置
JP4373235B2 (ja) 2003-02-14 2009-11-25 株式会社半導体エネルギー研究所 成膜装置及び成膜方法
US7211461B2 (en) 2003-02-14 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
DE10312646A1 (de) * 2003-03-21 2004-10-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Lichtemittierendes Bauelement mit anorganisch-organischer Konverterschicht
JP4463492B2 (ja) 2003-04-10 2010-05-19 株式会社半導体エネルギー研究所 製造装置
JP4493926B2 (ja) 2003-04-25 2010-06-30 株式会社半導体エネルギー研究所 製造装置
US7221095B2 (en) * 2003-06-16 2007-05-22 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method for fabricating light emitting device
JP4519532B2 (ja) 2003-06-16 2010-08-04 株式会社半導体エネルギー研究所 発光装置及び発光装置を用いた電子機器
JP2005029839A (ja) * 2003-07-11 2005-02-03 Ulvac Japan Ltd 蒸発容器、蒸発源および真空蒸着方法
TWI230462B (en) 2003-09-15 2005-04-01 Toppoly Optoelectronics Corp Thin film transistor structure with self-aligned intra-gate
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
CN1998087B (zh) 2004-03-12 2014-12-31 独立行政法人科学技术振兴机构 非晶形氧化物和薄膜晶体管
CA2585190A1 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
KR20070085879A (ko) 2004-11-10 2007-08-27 캐논 가부시끼가이샤 발광 장치
US7868326B2 (en) 2004-11-10 2011-01-11 Canon Kabushiki Kaisha Field effect transistor
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
EP1998373A3 (en) 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
WO2007058329A1 (en) 2005-11-15 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101229280B1 (ko) 2005-12-28 2013-02-04 삼성디스플레이 주식회사 표시 기판과, 이의 제조 방법 및 이를 구비한 표시 패널
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법

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