CN105161503B - 非晶硅半导体tft背板结构 - Google Patents
非晶硅半导体tft背板结构 Download PDFInfo
- Publication number
- CN105161503B CN105161503B CN201510586074.2A CN201510586074A CN105161503B CN 105161503 B CN105161503 B CN 105161503B CN 201510586074 A CN201510586074 A CN 201510586074A CN 105161503 B CN105161503 B CN 105161503B
- Authority
- CN
- China
- Prior art keywords
- amorphous silicon
- silicon layer
- layer
- type
- lightly doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 149
- 239000004065 semiconductor Substances 0.000 title claims abstract description 63
- 239000000758 substrate Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- -1 phosphonium ion Chemical class 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 abstract description 4
- 230000005525 hole transport Effects 0.000 abstract description 4
- 238000002347 injection Methods 0.000 abstract description 4
- 239000007924 injection Substances 0.000 abstract description 4
- 238000005036 potential barrier Methods 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78627—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
本发明提供一种非晶硅半导体TFT背板结构，其半导体层(4)为多层结构，包括接触栅极绝缘层(3)的底层非晶硅层(41)、接触源级(6)与漏极(7)的N型重掺杂非晶硅层(42)、夹设于底层非晶硅层(41)与N型重掺杂非晶硅层(42)之间的至少两层N型轻掺杂非晶硅层(43)、将每相邻两层轻掺杂非晶硅层(43)间隔开的第一中间非晶硅层(44)、及将N型重掺杂非晶硅层(42)与最靠近该N型重掺杂非晶硅层(42)的轻掺杂非晶硅层(43)间隔开的第二中间非晶硅层(45)；这种结构进一步降低了源漏极和半导体层之间的能量势垒，使电子注入更加容易，保证了开态电流不会降低，同时可以提高空穴传输的势垒，降低漏电流，提高TFT的可靠性和电学稳定性。
Description
技术领域
本发明涉及显示技术领域，尤其涉及一种非晶硅半导体TFT背板结构。
背景技术
平板显示装置具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有的平板显示装置主要包括液晶显示装置(Liquid Crystal Display，LCD)及有机电致发光显示装置(Organic Light Emitting Display，OLED)等。
薄膜晶体管(Thin Film Transistor，TFT)是平板显示装置的重要组成部分，可形成在玻璃基板或塑料基板上，通常作为开关器件和驱动器件用在诸如LCD、OLED、电泳显示装置(EPD)上。
按照TFT内半导体材料的不同，TFT通常可分成非晶硅(A-Si)半导体TFT、多晶硅(Poly-Si)半导体TFT、及氧化物半导体TFT。非晶硅在目前的半导体行业中应用最为广泛，非晶硅半导体TFT具有制程简单、成本低、易于进行大面积制程等优点，因此，平板显示装置采用非晶硅半导体TFT最为普遍。
由于非晶硅材料与金属接触时存在较大的势能差，二者之间难以形成欧姆接触，在实际应用中，为了获得金属和非晶硅半导体层之间的欧姆接触，一般对半导体层接触金属层的表面进行N型重掺杂，即对半导体层接触金属层的表面掺杂高浓度的磷(P)元素，以降低金属层和半导体层的接触阻抗。
图1所示为一种现有的非晶硅半导体TFT背板结构，包括基板10、栅极20、栅极绝缘层30、非晶硅半导体层40、源极60、及漏极70。所述非晶硅半导体层40为双层结构，其中接触栅极绝缘层30的底层为未经任何处理的纯非晶硅层41，接触源极60与漏极70的顶层为N型重掺杂非晶硅层42。N型重掺杂非晶硅层42与源极60、及漏极70形成欧姆接触，降低了源极60、漏极70与半导体层40的接触阻抗，提高了电流效率，增大了开态电流(Ion)。
但是上述现有的如图1所示的非晶硅半导体TFT背板结构在增大开态电流的同时，也存在一定的问题，如图3中虚线线型的TFT电流曲线所示，当TFT的栅极电压(Vg)为负电压，且负电压增大到一定程度时，会激发出较多的正电荷形成空穴导电通道，导致产生较大的空穴漏电流(Hole current Ioff)，降低了TFT的可靠性，使得TFT的电学稳定性下降。
发明内容
本发明的目的在于提供一种非晶硅半导体TFT背板结构，能够在不降低开态电流的前提下，降低漏电流，提高TFT的可靠性和电学稳定性。
为实现上述目的，本发明提供了一种非晶硅半导体TFT背板结构，包括基板、设于所述基板上的栅极、覆盖所述栅极与基板的栅极绝缘层、于所述栅极上方设于栅极绝缘层上的半导体层、及设于所述栅极绝缘层上分别接触半导体层上表面的源级与漏极；
所述半导体层为多层结构，包括接触栅极绝缘层的底层非晶硅层、接触所述源级与漏极的N型重掺杂非晶硅层、夹设于所述底层非晶硅层与N型重掺杂非晶硅层之间的至少两层N型轻掺杂非晶硅层、将每相邻两层轻掺杂非晶硅层间隔开的第一中间非晶硅层、及将所述N型重掺杂非晶硅层与最靠近该N型重掺杂非晶硅层的轻掺杂非晶硅层间隔开的第二中间非晶硅层；一沟道区于所述半导体层的中部贯穿所述N型重掺杂非晶硅层、第二中间非晶硅层、第一中间非晶硅层、与全部N型轻掺杂非晶硅层。
所述N型轻掺杂非晶硅层的数量为两层。
靠近所述N型重掺杂非晶硅层的轻掺杂非晶硅层的离子掺杂浓度高于靠近所述底层非晶硅层的轻掺杂非晶硅层的离子掺杂浓度。
所述N型轻掺杂非晶硅层与N型重掺杂非晶硅层的厚度相等。
所述半导体层通过化学气相沉积工艺、蚀刻工艺制作。
所述基板为玻璃基板。
所述栅极、源级、与漏极的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
所述栅极绝缘层的材料为氮化硅、氧化硅、或二者的组合。
本发明的有益效果：本发明提供的一种非晶硅半导体TFT背板结构，其半导体层设置为多层结构，在底层非晶硅层与N型重掺杂非晶硅层之间夹设至少两层N型轻掺杂非晶硅层，每相邻两层轻掺杂非晶硅层之间通过第一中间非晶硅层间隔开，N型重掺杂非晶硅层与最靠近该N型重掺杂非晶硅层的轻掺杂非晶硅层通过第二中间非晶硅层间隔开，这种结构进一步降低了源漏极和半导体层之间的能量势垒，使电子注入更加容易，保证了开态电流不会降低，同时可以提高空穴传输的势垒，分掉更多的TFT栅极与源极之间的电压，从而降低漏电流，提高TFT的可靠性和电学稳定性。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为一种现有的非晶硅半导体TFT背板结构的剖面示意图；
图2为本发明的非晶硅半导体TFT背板结构的剖面示意图；
图3为本发明的非晶硅半导体TFT背板结构与图1所示的现有的非晶硅半导体TFT背板结构的TFT电流曲线的对比示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明提供一种非晶硅半导体TFT背板结构，包括：基板1、设于所述基板1上的栅极2、覆盖所述栅极2与基板1的栅极绝缘层3、于所述栅极2上方设于栅极绝缘层3上的半导体层4、及设于所述栅极绝缘层3上分别接触半导体层4上表面的源级6与漏极7。
重点需要说明的是，所述半导体层4为多层结构，包括接触栅极绝缘层3的底层非晶硅层41、接触所述源级6与漏极7的N型重掺杂非晶硅层42、夹设于所述底层非晶硅层41与N型重掺杂非晶硅层42之间的至少两层N型轻掺杂非晶硅层43、将每相邻两层轻掺杂非晶硅层43间隔开的第一中间非晶硅层44、及将所述N型重掺杂非晶硅层42与最靠近该N型重掺杂非晶硅层42的轻掺杂非晶硅层43间隔开的第二中间非晶硅层45；一沟道区46于所述半导体层4的中部贯穿所述N型重掺杂非晶硅层42、第二中间非晶硅层45、第一中间非晶硅层44、与全部N型轻掺杂非晶硅层43。
优选的，如图2所示，所述N型轻掺杂非晶硅层43的数量为两层，该两层N型轻掺杂非晶硅层43被第一中间非晶硅层44间隔开，靠近所述N型重掺杂非晶硅层42的轻掺杂非晶硅层43的磷离子掺杂浓度高于靠近所述底层非晶硅层41的轻掺杂非晶硅层43的磷离子掺杂浓度。当然，所述N型轻掺杂非晶硅层43的数量还可为三层、四层甚至更多，每相邻两层轻掺杂非晶硅层43之间设置一第一中间非晶硅层44进行间隔，多层N型轻掺杂非晶硅层43按照从下到上的顺序依次提高磷离子掺杂浓度。
具体地，所述N型轻掺杂非晶硅层43与N型重掺杂非晶硅层42的厚度相等。
以图2所示的非晶硅半导体TFT背板结构为例，所述半导体层4先通过化学气相沉积(Chemical Vapor Deposition，CVD)工艺依次沉积底层非晶硅层41、N型轻掺杂非晶硅层43、第一中间非晶硅层44、N型轻掺杂非晶硅层43、第二中间非晶硅层45、与N型重掺杂非晶硅层42，沉积底层非晶硅层41、第一中间非晶硅层44、第二中间非晶硅层45的时候仅沉积纯非晶硅，而沉积两层N型轻掺杂非晶硅层43、N型重掺杂非晶硅层42的时候在沉积非晶硅的同时，通入含磷离子的气体，并通过调节含磷离子的气体的浓度与流量来控制不同的磷离子掺杂浓度；沉积完成后，再通过蚀刻工艺蚀刻出所述沟道区46。
进一步地，所述基板1为玻璃基板；所述栅极2、源级6、与漏极7的材料为钼(Mo)、钛(Ti)、铝(Al)、铜(Cu)中的一种或多种的堆栈组合；所述栅极绝缘层3的材料为氮化硅(SiNx)、氧化硅(SiOx)、或二者的组合。
请参阅图3，实线线型表示本发明的非晶硅半导体TFT背板结构的TFT电流曲线，与虚线线型所表示的现有的非晶硅半导体TFT背板结构的TFT电流曲线相比，本发明的非晶硅半导体TFT背板结构的TFT开态电流提高，当TFT的栅极电压Vg为负电压且负电压增大到一定程度时，漏电流降低，这是由于所述半导体层4设置为多层结构，在底层非晶硅层41与N型重掺杂非晶硅层42之间夹设至少两层N型轻掺杂非晶硅层43，每相邻两层轻掺杂非晶硅层43之间通过第一中间非晶硅层44间隔开，N型重掺杂非晶硅层42与最靠近该N型重掺杂非晶硅层42的轻掺杂非晶硅层43通过第二中间非晶硅层45间隔开，这种结构进一步降低了源极6、漏极7和半导体层4之间的能量势垒，使电子注入更加容易，保证了开态电流不会降低，同时可以提高空穴传输的势垒，分掉更多的TFT栅极与源极之间的电压，从而降低漏电流，提高TFT的可靠性和电学稳定性。
综上所述，本发明的非晶硅半导体TFT背板结构，其半导体层设置为多层结构，在底层非晶硅层与N型重掺杂非晶硅层之间夹设至少两层N型轻掺杂非晶硅层，每相邻两层轻掺杂非晶硅层之间通过第一中间非晶硅层间隔开，N型重掺杂非晶硅层与最靠近该N型重掺杂非晶硅层的轻掺杂非晶硅层通过第二中间非晶硅层间隔开，这种结构进一步降低了源漏极和半导体层之间的能量势垒，使电子注入更加容易，保证了开态电流不会降低，同时可以提高空穴传输的势垒，分掉更多的TFT栅极与源极之间的电压，从而降低漏电流，提高TFT的可靠性和电学稳定性。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。
Claims (8)
1.一种非晶硅半导体TFT背板结构，其特征在于，包括：基板(1)、设于所述基板(1)上的栅极(2)、覆盖所述栅极(2)与基板(1)的栅极绝缘层(3)、于所述栅极(2)上方设于栅极绝缘层(3)上的半导体层(4)、及设于所述栅极绝缘层(3)上分别接触半导体层(4)上表面的源极(6)与漏极(7)；
所述半导体层(4)为多层结构，包括接触栅极绝缘层(3)的底层非晶硅层(41)、接触所述源极 (6)与漏极(7)的N型重掺杂非晶硅层(42)、夹设于所述底层非晶硅层(41)与N型重掺杂非晶硅层(42)之间的至少两层N型轻掺杂非晶硅层(43)、将每相邻两层轻掺杂非晶硅层(43)间隔开的第一中间非晶硅层(44)、及将所述N型重掺杂非晶硅层(42)与最靠近该N型重掺杂非晶硅层(42)的轻掺杂非晶硅层(43)间隔开的第二中间非晶硅层(45)；一沟道区(46)于所述半导体层(4)的中部贯穿所述N型重掺杂非晶硅层(42)、第二中间非晶硅层(45)、第一中间非晶硅层(44)、与全部N型轻掺杂非晶硅层(43)；
所述N型轻掺杂非晶硅层(43)按照从下到上的顺序逐层提高磷离子掺杂浓度。
2.如权利要求1所述非晶硅半导体TFT背板结构，其特征在于，所述N型轻掺杂非晶硅层(43)的数量为两层。
3.如权利要求2所述非晶硅半导体TFT背板结构，其特征在于，靠近所述N型重掺杂非晶硅层(42)的轻掺杂非晶硅层(43)的离子掺杂浓度高于靠近所述底层非晶硅层(41)的轻掺杂非晶硅层(43)的离子掺杂浓度。
4.如权利要求2所述非晶硅半导体TFT背板结构，其特征在于，所述N型轻掺杂非晶硅层(43)与N型重掺杂非晶硅层(42)的厚度相等。
5.如权利要求3所述非晶硅半导体TFT背板结构，其特征在于，所述半导体层(4)通过化学气相沉积工艺、蚀刻工艺制作。
6.如权利要求1所述非晶硅半导体TFT背板结构，其特征在于，所述基板(1)为玻璃基板。
7.如权利要求1所述非晶硅半导体TFT背板结构，其特征在于，所述栅极(2)、源极 (6)、与漏极(7)的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
8.如权利要求1所述非晶硅半导体TFT背板结构，其特征在于，所述栅极绝缘层(3)的材料为氮化硅、氧化硅、或二者的组合。
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510586074.2A CN105161503B (zh) | 2015-09-15 | 2015-09-15 | 非晶硅半导体tft背板结构 |
| PCT/CN2015/091806 WO2017045237A1 (zh) | 2015-09-15 | 2015-10-13 | 非晶硅半导体tft背板结构 |
| US14/787,772 US9741858B2 (en) | 2015-09-15 | 2015-10-13 | Amorphous silicon semiconductor TFT backboard structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510586074.2A CN105161503B (zh) | 2015-09-15 | 2015-09-15 | 非晶硅半导体tft背板结构 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105161503A CN105161503A (zh) | 2015-12-16 |
| CN105161503B true CN105161503B (zh) | 2018-07-10 |
Family
ID=54802317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510586074.2A Active CN105161503B (zh) | 2015-09-15 | 2015-09-15 | 非晶硅半导体tft背板结构 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9741858B2 (zh) |
| CN (1) | CN105161503B (zh) |
| WO (1) | WO2017045237A1 (zh) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018119958A1 (zh) * | 2016-12-29 | 2018-07-05 | 深圳市柔宇科技有限公司 | 薄膜晶体管和薄膜晶体管的制备方法和阵列基板 |
| US10784289B2 (en) * | 2018-05-22 | 2020-09-22 | Chongqing Boe Optoelectronics Technology Co., Ltd. | Array substrate, display apparatus, pixel driving circuit, method for driving image display in display apparatus, and method of fabricating array substrate |
| US11495689B2 (en) * | 2018-08-08 | 2022-11-08 | Sakai Display Products Corporation | Thin-film transistor and method for producing same |
| CN109545751B (zh) * | 2018-10-15 | 2022-02-22 | Tcl华星光电技术有限公司 | 薄膜晶体管阵列基板制造方法 |
| CN109545690A (zh) * | 2018-12-03 | 2019-03-29 | 惠科股份有限公司 | 薄膜晶体管结构及其制作方法、显示装置 |
| CN109545689B (zh) * | 2018-12-03 | 2021-05-25 | 惠科股份有限公司 | 主动开关及其制作方法、显示装置 |
| CN109616510B (zh) | 2018-12-03 | 2020-04-14 | 惠科股份有限公司 | 薄膜晶体管结构及其制作方法、显示装置 |
| CN109713044B (zh) * | 2018-12-25 | 2021-04-13 | 惠科股份有限公司 | 一种薄膜晶体管及制作方法和显示面板 |
| CN113345966A (zh) * | 2020-02-18 | 2021-09-03 | 堺显示器制品株式会社 | 薄膜晶体管及其制造方法 |
| CN113193049B (zh) * | 2021-04-29 | 2024-04-26 | Tcl华星光电技术有限公司 | 一种半导体器件及其制作方法、显示面板 |
| CN116195033A (zh) * | 2021-09-29 | 2023-05-30 | 京东方科技集团股份有限公司 | 非晶硅薄膜晶体管及其制备方法、显示面板 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104282696A (zh) * | 2014-10-22 | 2015-01-14 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
| CN104576750A (zh) * | 2014-12-02 | 2015-04-29 | 信利（惠州）智能显示有限公司 | 薄膜晶体管结构 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5198694A (en) * | 1990-10-05 | 1993-03-30 | General Electric Company | Thin film transistor structure with improved source/drain contacts |
| JP2661594B2 (ja) * | 1995-05-25 | 1997-10-08 | 日本電気株式会社 | 薄膜トランジスタおよびその製造方法 |
| US7948171B2 (en) * | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US8110829B2 (en) * | 2007-05-31 | 2012-02-07 | Lg Display Co., Ltd. | Array substrate of liquid crystal display and method for fabricating the same |
| US7968885B2 (en) * | 2007-08-07 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| WO2011056710A2 (en) * | 2009-11-03 | 2011-05-12 | Applied Materials, Inc. | Thin film transistors having multiple doped silicon layers |
| US8405085B2 (en) * | 2010-12-01 | 2013-03-26 | Au Optronics Corporation | Thin film transistor capable of reducing photo current leakage |
-
2015
- 2015-09-15 CN CN201510586074.2A patent/CN105161503B/zh active Active
- 2015-10-13 WO PCT/CN2015/091806 patent/WO2017045237A1/zh active Application Filing
- 2015-10-13 US US14/787,772 patent/US9741858B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104282696A (zh) * | 2014-10-22 | 2015-01-14 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
| CN104576750A (zh) * | 2014-12-02 | 2015-04-29 | 信利（惠州）智能显示有限公司 | 薄膜晶体管结构 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105161503A (zh) | 2015-12-16 |
| US20170162707A1 (en) | 2017-06-08 |
| WO2017045237A1 (zh) | 2017-03-23 |
| US9741858B2 (en) | 2017-08-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105161503B (zh) | 非晶硅半导体tft背板结构 | |
| CN105390551B (zh) | 薄膜晶体管及其制造方法、阵列基板、显示装置 | |
| CN104241298B (zh) | Tft背板结构及其制作方法 | |
| CN107507841A (zh) | 阵列基板及其制作方法、显示装置 | |
| CN104037090B (zh) | 氧化物薄膜晶体管结构制作方法及氧化物薄膜晶体管结构 | |
| CN103477441A (zh) | 薄膜晶体管、显示面板和薄膜晶体管的制造方法 | |
| WO2018040608A1 (zh) | 氧化物薄膜晶体管及其制备方法、阵列基板、显示装置 | |
| CN106129086B (zh) | Tft基板及其制作方法 | |
| CN104952880A (zh) | 双栅极tft基板的制作方法及其结构 | |
| CN104752420A (zh) | 显示设备的抗静电装置及其制造方法 | |
| CN105589276A (zh) | 阵列基板、液晶显示面板及液晶显示装置 | |
| CN105633170A (zh) | 金属氧化物薄膜晶体管及其制备方法以及阵列基板和显示装置 | |
| US10121883B2 (en) | Manufacturing method of top gate thin-film transistor | |
| CN104867985A (zh) | 一种薄膜晶体管、其制备方法、阵列基板及显示装置 | |
| CN102646715A (zh) | 薄膜晶体管及其制造方法 | |
| CN104979215A (zh) | 低温多晶硅薄膜晶体管及其制备方法 | |
| CN106449655A (zh) | 薄膜晶体管阵列基板及其制作方法 | |
| CN104241299A (zh) | 氧化物半导体tft基板的制作方法及结构 | |
| US20160181290A1 (en) | Thin film transistor and fabricating method thereof, and display device | |
| CN104157610A (zh) | 氧化物半导体tft基板的制作方法及其结构 | |
| CN110233156A (zh) | 薄膜晶体管基板的制作方法及薄膜晶体管基板 | |
| CN106298815A (zh) | 薄膜晶体管及其制作方法、阵列基板和显示装置 | |
| CN107017210A (zh) | 薄膜晶体管 | |
| KR20180015659A (ko) | 박막 트랜지스터 및 그 제조 방법 | |
| CN104934444B (zh) | 共平面型氧化物半导体tft基板结构及其制作方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |