CN104934444B - 共平面型氧化物半导体tft基板结构及其制作方法 - Google Patents
共平面型氧化物半导体tft基板结构及其制作方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 64
- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 56
- 239000002184 metal Substances 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 44
- 239000012212 insulator Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 30
- 238000002161 passivation Methods 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 12
- 239000004411 aluminium Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- 229910052750 molybdenum Inorganic materials 0.000 claims description 12
- 239000011733 molybdenum Substances 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 9
- 238000012545 processing Methods 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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Abstract
本发明提供一种共平面型氧化物半导体TFT基板结构及其制作方法,所述共平面型氧化物半导体TFT基板结构中,有源层包括本体及连接本体的数条短沟道,所述数条短沟道通过数个条状金属电极间隔开,使得所述有源层具有较高的迁移率及较低的漏电流,从而改善TFT器件的性能。本发明提供的一种共平面型氧化物半导体TFT基板结构的制备方法,通过在源极与漏极之间形成间隔设置的数个条状金属电极,使得沉积氧化物半导体层时,可以在源极与漏极之间形成由数个条状金属电极间隔开的数条短沟道,该方法简单,不需要额外的光罩或者增加制程,即可获得不同于现有结构的有源层,制得的有源层具有较高的迁移率及较低的漏电流,从而改善TFT器件的性能。
Description
技术领域
本发明涉及平面显示器领域,尤其涉及一种共平面型氧化物半导体TFT基板结构及其制作方法。
背景技术
主动矩阵平面显示器具有机身薄、省电、无辐射等众多优点,得到了广泛的应用。其中,有机发光二极管(organic light-emitting diode,OLED)显示技术是一种极具发展前景的平板显示技术,它具有十分优异的显示性能,特别是自发光、结构简单、超轻薄、响应速度快、宽视角、低功耗及可实现柔性显示等特性,被誉为“梦幻显示器”,再加上其生产设备投资远小于薄膜晶体管型液晶显示屏(TFT-LCD,Thin Film Transistor-LiquidCrystal Display),得到了各大显示器厂家的青睐,已成为显示技术领域中第三代显示器件的主力军。目前OLED已处于大规模量产的前夜,随着研究的进一步深入,新技术的不断涌现,OLED显示器件必将有一个突破性的发展。
氧化物半导体(Oxide Semiconductor)由于具有较高的电子迁移率,具有非晶结构,与非晶硅制程兼容性较高,从而在OLED大尺寸面板生产中得到了广泛的应用。
目前,氧化物半导体TFT基板的常用结构为具有蚀刻阻挡层(ESL,Etching StopLayer)的结构,但该结构本身存在一些问题,如蚀刻均一性难以控制,需要多加一道光罩及光刻制程,栅极与源/漏极交叠,存储电容较大,难以达到高分辨率等。
相比于具有蚀刻阻挡层的结构,共平面型(Coplanar)氧化物半导体TFT基板结构更为合理,更具有量产前途。如图1至图5所示,为现有的一种共平面型氧化物半导体TFT基板结构的制作方法,包括如下步骤:
步骤1、提供基板100,并在基板100上沉积第一金属层,并通过光刻制程使第一金属层图案化,形成间隔设置的第一栅极210与第二栅极220;
步骤2、在第一栅极210、第二栅极220、及基板100上沉积栅极绝缘层300,并通过光刻制程使其图案化,在所述栅极绝缘层300上对应所述第二栅极220上方形成第一通孔310;
步骤3、在栅极绝缘层300上沉积第二金属层,并通过光刻制程使第二金属层图案化,形成间隔设置的源极410与漏极420,并且所述漏极420上形成有第二通孔425;
具体的,所述漏极420经由第一通孔310与第二栅极220相连。
步骤4、在源极410、漏极420、及栅极绝缘层300上沉积氧化物半导体层,并通过光刻制程使其图案化,形成有源层500,所述有源层500包括本体520及连接本体520且位于源极410与漏极420之间的沟道510;
步骤5、在有源层500、源极410、及漏极420上沉积钝化层600,并通过光刻制程对其进行图案化,在所述钝化层600上对应漏极420上方形成第三通孔610。
具体的,所述钝化层600填充所述漏极420上的第二通孔425。
上述制作方法得到的一种共平面型氧化物半导体TFT基板结构中,所述有源层500的沟道510为一条长沟道,所述有源层500具有较低的迁移率及较高的漏电流,TFT器件的性能较差。
发明内容
本发明的目的在于提供一种共平面型氧化物半导体TFT基板结构,有源层包括本体及连接本体的数条短沟道,数条短沟道通过数个条状金属电极间隔开,使得有源层具有较高的迁移率及较低的漏电流,从而改善TFT器件的性能。
本发明的目的还在于提供一种共平面型氧化物半导体TFT基板结构的制备方法,通过一道光刻制程形成源极、漏极、及位于源极与漏极之间且间隔设置的数个条状金属电极,使得下一制程沉积氧化物半导体层时,可以在源极与漏极之间形成数条短沟道,所述数条短沟道通过数个条状金属电极间隔开,该方法简单,不需要使用额外的光罩或者增加制程,即可获得不同于现有技术的有源层结构,制得的有源层具有较高的迁移率及较低的漏电流,从而改善TFT器件的性能。
为实现上述目的,本发明提供一种共平面型氧化物半导体TFT基板结构,包括:基板,位于基板上的第一栅极与第二栅极,位于第一栅极、第二栅极、及基板上的栅极绝缘层,位于栅极绝缘层上的源极、漏极、及位于源极与漏极之间且间隔设置的数个条状金属电极,位于所述源极、漏极、条状金属电极、及栅极绝缘层上的有源层,位于所述有源层、源极、及漏极上的钝化层;
其中,所述有源层包括本体及连接本体且位于源极与漏极之间的数条短沟道,所述数条短沟道通过数个条状金属电极间隔开。
所述栅极绝缘层上对应所述第二栅极上方设有第一通孔,所述漏极经由第一通孔与第二栅极相连。
所述漏极上设有第二通孔,所述钝化层填充该第二通孔;所述钝化层上对应所述漏极上方设有第三通孔。
所述有源层的材料为金属氧化物;所述第一栅极与第二栅极的材料为铜、铝、或钼;所述栅极绝缘层的材料为氧化硅或氮化硅。
所述源极、漏极、及条状金属电极的材料为铜、铝、或钼;所述钝化层的材料为氮化硅或氧化硅。
本发明还提供一种共平面型氧化物半导体TFT基板结构的制备方法,其包括如下步骤:
步骤1、提供基板,并在基板上沉积第一金属层,并通过光刻制程使第一金属层图案化,形成间隔设置的第一栅极与第二栅极;
步骤2、在所述第一栅极、第二栅极、及基板上沉积栅极绝缘层,并通过光刻制程使其图案化,在所述栅极绝缘层上对应所述第二栅极上方形成第一通孔;
步骤3、在所述栅极绝缘层上沉积第二金属层,并通过光刻制程使第二金属层图案化,形成源极、漏极、及位于源极与漏极之间且间隔设置的数个条状金属电极;
所述漏极经由第一通孔与第二栅极相连;
所述漏极上形成有第二通孔;
步骤4、在所述源极、漏极、条状金属电极、及栅极绝缘层上沉积氧化物半导体层,并通过光刻制程使其图案化,形成有源层,所述有源层包括本体及连接本体且位于源极与漏极之间的数条短沟道,所述数条短沟道通过数个条状金属电极间隔开;
步骤5、在所述有源层、源极、及漏极上沉积钝化层,并通过光刻制程使其图案化,在所述钝化层上对应漏极上方形成第三通孔;
所述钝化层填充所述漏极上的第二通孔。
所述有源层的材料为金属氧化物。
所述第一栅极与第二栅极的材料为铜、铝、或钼;所述栅极绝缘层的材料为氧化硅或氮化硅。
所述源极、漏极、及条状金属电极的材料为铜、铝、或钼。
所述钝化层的材料为氮化硅或氧化硅。
本发明的有益效果:本发明提供一种共平面型氧化物半导体TFT基板结构及其制备方法,所述共平面型氧化物半导体TFT基板结构中,所述有源层包括本体及连接本体的数条短沟道,所述数条短沟道通过数个条状金属电极间隔开,使得所述有源层具有较高的迁移率及较低的漏电流,从而改善TFT器件的性能。本发明提供的一种共平面型氧化物半导体TFT基板结构的制备方法,通过一道光刻制程形成源极、漏极、及位于源极与漏极之间且间隔设置的数个条状金属电极,使得下一制程沉积氧化物半导体层时,可以在源极与漏极之间形成数条短沟道,所述数条短沟道通过数个条状金属电极间隔开,该方法简单,不需要使用额外的光罩或者增加制程,即可获得不同于现有技术的有源层结构,制得的有源层具有较高的迁移率及较低的漏电流,从而改善TFT器件的性能。
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
附图说明
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其它有益效果显而易见。
附图中,
图1为现有的一种共平面型氧化物半导体TFT基板结构的制作方法步骤1的示意图;
图2为现有的一种共平面型氧化物半导体TFT基板结构的制作方法步骤2的示意图;
图3为现有的一种共平面型氧化物半导体TFT基板结构的制作方法步骤3的示意图;
图4为现有的一种共平面型氧化物半导体TFT基板结构的制作方法步骤4的示意图;
图5为现有的一种共平面型氧化物半导体TFT基板结构的制作方法步骤5的示意图;
图6为本发明的共平面型氧化物半导体TFT基板结构的剖面示意图;
图7为本发明的共平面型氧化物半导体TFT基板结构的制作方法的流程图;
图8为本发明的共平面型氧化物半导体TFT基板结构的制作方法步骤1的示意图;
图9为本发明的共平面型氧化物半导体TFT基板结构的制作方法步骤2的示意图;
图10为本发明的共平面型氧化物半导体TFT基板结构的制作方法步骤3的示意图;
图11为本发明的共平面型氧化物半导体TFT基板结构的制作方法步骤4的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图6,本发明首先提供一种共平面型氧化物半导体TFT基板结构,包括:基板10,位于基板10上的第一栅极21与第二栅极22,位于第一栅极21、第二栅极22、及基板10上的栅极绝缘层30,位于栅极绝缘层30上的源极41、漏极42、及位于源极41与漏极42之间且间隔设置的数个条状金属电极43,位于所述源极41、漏极42、条状金属电极43、及栅极绝缘层30上的有源层50,位于所述有源层50、源极41、及漏极42上的钝化层60;
其中,所述有源层50包括本体51及连接本体51且位于源极41与漏极42之间的数条短沟道52,所述数条短沟道52通过数个条状金属电极43间隔开。
具体的,所述栅极绝缘层30上对应所述第二栅极22上方设有第一通孔31,所述漏极42经由第一通孔31与第二栅极22相连。
所述漏极42上设有第二通孔421,所述钝化层60填充该第二通孔421。
所述钝化层60上对应所述漏极42上方设有第三通孔61。
优选的,所述第一栅极21与第二栅极22的材料为铜、铝、或钼。
所述栅极绝缘层30的材料为氧化硅或氮化硅。
所述源极41、漏极42、及条状金属电极43的材料为铜、铝、或钼。
具体的,所述有源层50的材料为金属氧化物,优选的,所述金属氧化物为铟镓锌氧化物(IGZO)。
优选的,所述钝化层60的材料为氮化硅或氧化硅。
本发明提供的一种共平面型氧化物半导体TFT基板结构,其中,所述有源层50的沟道由数条间隔设置的短沟道52组成,与现有技术相比,相当于将原来的长沟道510(如图5所示)分解为一个个间隔设置的短沟道52,根据器件的短沟道效应,通过改变短沟道52的宽度大小,可以调节TFT器件的栅极电压(Vth)、开关速度(S.S)、工作电流(Ion)、及漏电流(Ioff)等性能参数,改善TFT器件的性能,且不需要增加黄光或者其它附加制程。
请参阅图6至图11,本发明还提供一种共平面型氧化物半导体TFT基板结构的制作方法,包括如下步骤:
步骤1、如图8所示,提供基板10,并在基板10上沉积第一金属层,并通过光刻制程使第一金属层图案化,形成间隔设置的第一栅极21与第二栅极22。
优选的,所述第一栅极21与第二栅极22的材料为铜、铝、或钼。
步骤2、如图9所示,在所述第一栅极21、第二栅极22、及基板10上沉积栅极绝缘层30,并通过光刻制程使其图案化,在所述栅极绝缘层30上对应所述第二栅极22上方形成第一通孔31。
优选的,所述栅极绝缘层30的材料为氧化硅或氮化硅。
步骤3、如图10所示,在所述栅极绝缘层30上沉积第二金属层,并通过光刻制程使第二金属层图案化,形成源极41、漏极42、及位于源极41与漏极42之间且间隔设置的数个条状金属电极43。
具体的,所述漏极42经由第一通孔31与第二栅极22相连。
具体的,所述漏极42上形成有第二通孔421。
具体的,所述源极41、漏极42、及条状金属电极43通过一道光刻制程形成。
优选的,所述源极41、漏极42、及条状金属电极43的材料为铜、铝、或钼。
步骤4、如图11所示,在所述源极41、漏极42、条状金属电极43、及栅极绝缘层30上沉积氧化物半导体层,并通过光刻制程使其图案化,形成有源层50,所述有源层50包括本体51及连接本体且位于源极41与漏极42之间的数条短沟道52,所述数条短沟道52通过数个条状金属电极43间隔开。
具体的,所述有源层50的材料为金属氧化物,优选的,所述金属氧化物为铟镓锌氧化物(IGZO)。
本发明通过步骤3的一道光刻制程形成源极41、漏极42、及位于源极41与漏极42之间且间隔设置的数个条状金属电极43,使得步骤4沉积氧化物半导体层时,可以在源极41与漏极42之间形成数条短沟道52,所述数条短沟道52通过数个条状金属电极43间隔开,该方法简单,不需要额外的光罩或者增加制程,即可获得不同于现有技术的有源层结构,制得的有源层50具有较高的迁移率及较低的漏电流,从而改善TFT器件的性能。
步骤5、在所述有源层50、源极41、及漏极42上沉积钝化层60,并通过光刻制程使其图案化,在所述钝化层60上对应所述漏极42上方形成第三通孔61,从而制得如图6所示的共平面型氧化物半导体TFT基板结构。
具体的,所述钝化层60填充所述漏极42上的第二通孔421。
优选的,所述钝化层60的材料为氮化硅或氧化硅。
本发明提供的一种共平面型氧化物半导体TFT基板结构的制备方法,通过一道光刻制程形成源极、漏极、及位于源极与漏极之间且间隔设置的数个条状金属电极,使得下一制程沉积氧化物半导体层时,可以在源极与漏极之间形成数条短沟道,所述数条短沟道通过数个条状金属电极间隔开,该方法简单,不需要额外的光罩或者增加制程,即可获得不同于现有技术的有源层结构,制得的有源层具有较高的迁移率及较低的漏电流,从而改善TFT器件的性能。
综上所述,本发明提供的一种共平面型氧化物半导体TFT基板结构,其中,有源层包括本体及连接本体的数条短沟道,所述数条短沟道通过数个条状金属电极间隔开,使得所述有源层具有较高的迁移率及较低的漏电流,从而改善TFT器件的性能。本发明提供的一种共平面型氧化物半导体TFT基板结构的制备方法,通过一道光刻制程形成源极、漏极、及位于源极与漏极之间且间隔设置的数个条状金属电极,使得下一制程沉积氧化物半导体层时,可以在源极与漏极之间形成数条短沟道,所述数条短沟道通过数个条状金属电极间隔开,该方法简单,不需要使用额外的光罩或者增加制程,即可获得不同于现有技术的有源层结构,制得的有源层具有较高的迁移率及较低的漏电流,从而改善TFT器件的性能。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明权利要求的保护范围。
Claims (10)
1.一种共平面型氧化物半导体TFT基板结构,其特征在于,包括:基板(10),位于基板(10)上的第一栅极(21)与第二栅极(22),位于第一栅极(21)、第二栅极(22)、及基板(10)上的栅极绝缘层(30),位于栅极绝缘层(30)上的源极(41)、漏极(42)、及位于源极(41)与漏极(42)之间且间隔设置的数个条状金属电极(43),位于所述源极(41)、漏极(42)、条状金属电极(43)、及栅极绝缘层(30)上的有源层(50),位于所述有源层(50)、源极(41)、及漏极(42)上的钝化层(60);
其中,所述有源层(50)包括本体(51)及连接本体(51)且位于源极(41)与漏极(42)之间的数条短沟道(52),所述数条短沟道(52)通过数个条状金属电极(43)间隔开。
2.如权利要求1所述的共平面型氧化物半导体TFT基板结构,其特征在于,所述栅极绝缘层(30)上对应所述第二栅极(22)上方设有第一通孔(31),所述漏极(42)经由第一通孔(31)与第二栅极(22)相连。
3.如权利要求1所述的共平面型氧化物半导体TFT基板结构,其特征在于,所述漏极(42)上设有第二通孔(421),所述钝化层(60)填充该第二通孔(421);所述钝化层(60)上对应所述漏极(42)上方设有第三通孔(61)。
4.如权利要求1所述的共平面型氧化物半导体TFT基板结构,其特征在于,所述有源层(50)的材料为金属氧化物;所述第一栅极(21)与第二栅极(22)的材料为铜、铝、或钼;所述栅极绝缘层(30)的材料为氧化硅或氮化硅。
5.如权利要求1所述的共平面型氧化物半导体TFT基板结构,其特征在于,所述源极(41)、漏极(42)、及条状金属电极(43)的材料为铜、铝、或钼,所述钝化层(60)的材料为氮化硅或氧化硅。
6.一种共平面型氧化物半导体TFT基板结构的制作方法,其特征在于,包括如下步骤:
步骤1、提供基板(10),并在基板(10)上沉积第一金属层,并通过光刻制程使第一金属层图案化,形成间隔设置的第一栅极(21)与第二栅极(22);
步骤2、在所述第一栅极(21)、第二栅极(22)、及基板(10)上沉积栅极绝缘层(30),并通过光刻制程使其图案化,在所述栅极绝缘层(30)上对应所述第二栅极(22)上方形成第一通孔(31);
步骤3、在所述栅极绝缘层(30)上沉积第二金属层,并通过光刻制程使第二金属层图案化,形成源极(41)、漏极(42)、及位于源极(41)与漏极(42)之间且间隔设置的数个条状金属电极(43);
所述漏极(42)经由第一通孔(31)与第二栅极(22)相连;
所述漏极(42)上形成有第二通孔(421);
步骤4、在所述源极(41)、漏极(42)、条状金属电极(43)、及栅极绝缘层(30)上沉积氧化物半导体层,并通过光刻制程使其图案化,形成有源层(50),所述有源层(50)包括本体(51)及连接本体(51)且位于源极(41)与漏极(42)之间的数条短沟道(52),所述数条短沟道(52)通过数个条状金属电极(43)间隔开;
步骤5、在所述有源层(50)、源极(41)、及漏极(42)上沉积钝化层(60),并通过光刻制程使其图案化,在所述钝化层(60)上对应漏极(42)上方形成第三通孔(61);
所述钝化层(60)填充所述漏极(420)上的第二通孔(421)。
7.如权利要求6所述的共平面型氧化物半导体TFT基板结构的制作方法,其特征在于,所述有源层(50)的材料为金属氧化物。
8.如权利要求6所述的共平面型氧化物半导体TFT基板结构的制作方法,其特征在于,所述第一栅极(21)与第二栅极(22)的材料为铜、铝、或钼;所述栅极绝缘层(30)的材料为氧化硅或氮化硅。
9.如权利要求6所述的共平面型氧化物半导体TFT基板结构的制作方法,其特征在于,所述源极(41)、漏极(42)、及条状金属电极(43)的材料为铜、铝、或钼。
10.如权利要求6所述的共平面型氧化物半导体TFT基板结构的制作方法,其特征在于,所述钝化层(60)的材料为氮化硅或氧化硅。
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JPH0747876Y2 (ja) * | 1988-10-19 | 1995-11-01 | 富士ゼロックス株式会社 | 薄膜トラジスタ |
KR100682892B1 (ko) * | 2004-09-25 | 2007-02-15 | 삼성전자주식회사 | 박막 트랜지스터의 제조방법 |
WO2007080575A1 (en) * | 2006-01-09 | 2007-07-19 | Technion Research And Development Foundation Ltd. | Transistor structures and methods of fabrication thereof |
JP5525692B2 (ja) * | 2007-02-22 | 2014-06-18 | 三星ディスプレイ株式會社 | 表示基板とその製造方法、及びこれを具備した表示装置 |
JP5434000B2 (ja) * | 2008-07-17 | 2014-03-05 | 株式会社リコー | 電界効果型トランジスタ及びその製造方法 |
TWI622175B (zh) * | 2008-07-31 | 2018-04-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
CN101740631B (zh) * | 2008-11-07 | 2014-07-16 | 株式会社半导体能源研究所 | 半导体装置及该半导体装置的制造方法 |
US8338226B2 (en) * | 2009-04-02 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
TWI596741B (zh) * | 2009-08-07 | 2017-08-21 | 半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
WO2011027702A1 (en) * | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
WO2011037008A1 (en) * | 2009-09-24 | 2011-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device |
JP5929132B2 (ja) * | 2011-11-30 | 2016-06-01 | 株式会社リコー | 金属酸化物薄膜形成用塗布液、金属酸化物薄膜の製造方法、及び電界効果型トランジスタの製造方法 |
CN104040683B (zh) * | 2012-11-30 | 2017-04-19 | 深圳市柔宇科技有限公司 | 自对准金属氧化物薄膜晶体管器件及制造方法 |
CN103107202B (zh) * | 2013-01-23 | 2016-04-27 | 深圳市华星光电技术有限公司 | 一种薄膜晶体管结构、液晶显示装置和一种制造方法 |
CN104112711B (zh) * | 2014-07-22 | 2017-05-03 | 深圳市华星光电技术有限公司 | 共平面型氧化物半导体tft基板的制作方法 |
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JP6560760B2 (ja) | 2019-08-14 |
GB2547858B (en) | 2020-12-16 |
JP2018509761A (ja) | 2018-04-05 |
US9768324B2 (en) | 2017-09-19 |
US9614104B2 (en) | 2017-04-04 |
US20170162717A1 (en) | 2017-06-08 |
WO2016179877A1 (zh) | 2016-11-17 |
GB2547858A (en) | 2017-08-30 |
CN104934444A (zh) | 2015-09-23 |
GB201708873D0 (en) | 2017-07-19 |
KR20170085068A (ko) | 2017-07-21 |
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