TW460731B - Electrode structure and production method of wide viewing angle LCD - Google Patents
Electrode structure and production method of wide viewing angle LCD Download PDFInfo
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- TW460731B TW460731B TW088115182A TW88115182A TW460731B TW 460731 B TW460731 B TW 460731B TW 088115182 A TW088115182 A TW 088115182A TW 88115182 A TW88115182 A TW 88115182A TW 460731 B TW460731 B TW 460731B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
460T31 五、發明說明(1) 發明領域 本發明係關於液晶顯示器(liquid crystal Π;,LCD)的電極結構及製作方法。特別是關於一種 角Uide viewing angle)液晶顯示器的電極結構及製 1下万法。 發明背景 、液晶顯示器已普遍作為電子工業產品上的顯示裝置。 近年來,廣視角液晶顯示器的技術不時被提出。其中一種 傳統之液晶顯示裝置的廣視角技術係以同平面切換 (in-Plane switch,IPS)模式來實現。但其梳齒狀(c〇mb shape)晝素電極(pixei electr〇de)與共電極&⑽m〇n elect rode)是以金屬製造,開口透光率(effective transmission of light)無法提高。 近來,新發展之邊緣電場切換(fringe field switch,FFS)模式,其畫素電極與共電極則以透明的 (transparent)銦錫氧化物(indium_t in_〇xide,Ιτ〇)電極 來製造,可大幅增加液晶顯示裝置的亮度。FFS模式的電 極結構設計,其晝素電極為呈梳齒狀的結構,共電極則呈 平板狀的結構。並且,呈梳齒狀結構的畫素電極須在呈 板狀結構的共電極的上方。此種吓5模式的電極結構設計 C:\patent\880099erso. ptd 460731 五、發明說明(2) 需要兩次之銦錫氧化物的製作程序 圖1為一習知的廣視角液晶顯示器之單一晝素的電極 、=構1〇〇的頂視示意圖。如圖1所示,此電極結構上層晝 ,、電極1J 1呈梳齒狀結才冓,而下層共電極i 〇2呈平板狀結 構在單晝素裡掃描乜號線(scan signal line)區 域103與貝料j吕號線(data signal Hne)區域1〇4的交又點 (crossing p〇int)附近有一開關元件 device),如薄膜電晶體(thin fUm transist〇f, TFT) 1 05,薄膜電晶體1〇5為一個控制單一晝素電極充放電 的開關,此為主動式驅動(active drive)的方法。此種電 極構裝中將共電極層設計在另—片基板(substrate)上 者,如TN型的電極構裝。而,將晝素電極層與共電極層設 a十在同一基板上者,如Ips或FFS之液晶顯示器的電極結 ,二t動式控制元件,除了薄膜電晶體外,可更包括有金 氧半場效(metal oxide semiconductor ,M0S)電晶體、二 極體(diode)金屬絕緣金屬(metai_insuiat〇r_metai, MIM)電晶體和變阻器(varisti〇r)等。 此種電極結構中,因為只有一層上層晝素電極1〇1呈 梳齒狀結構’上下層電極之對位誤差的容忍度很大。上下 層電極相父處自然形成電容儲存區,無需佔用額外的透光 區,也就是說,使開口透光率提高。
C:\patent\880099ersD.ptd
4607 3]
,圖2說明圖1的剖面結構’其中,畫素電極層與共電極 層係設計在同一基板(substrate)上。如圖2所示,此種電 極結構之平板狀的下層共電極層201位於玻璃基板2〇2之 上,而此共電極層2〇1與梳齒狀畫素電極2〇3、2〇4和2〇5之 間是一不導電的隔離絕緣層2 0 6。液晶層2〇7介於結合此電 極結構的兩片玻璃基板201與208之間。 雖然’上述電極結構的晝素電極與共電極可以透明 的銦錫氧化物電極來製造,以增加液晶顯示裝置的亮度。 然而,此液晶顯示裝置的電極結構仍有下列缺點. (a) 上層梳齒狀畫素電極的角隅^以的幻部份透光度差。 (b) 由於角隅部份電場較強,容易有殘留的電荷 (residual electric charge)產生。 (c) 資料信號線和電極(包括共電極或晝素電極)之間要有 一定的距離,因而減少開口透光率(effective transmission of light) 〇 (d) 在後製程前段形成銦錫氧化物時,重製作業較不容 易。 所乂為使S知廣視角液晶顯示器之 高,並且其電極結構的f裎宠县,v ^ +二的才远度杈 ,,φ龙玉銪认& Γ 谷易必須在其電極結構的設 二中,4去額外的透光開口區的佔用,並且以最佳的方式 來處理後製程後段形成銦錫氧化物時的重製作業。
460731
發明概要 本發明克服了上述習知廣視角液晶顯示器之電極結構 :困難和缺點。其主要目的之一是’提出一種廣視角液晶 ^不器的電極結構。此電極結構具有各自獨立之晝素電極 口全部皆相連之共電極的結構。下層畫素電極形成在一基 反上’而上層共電極係位於此基板的上方。 本發 板,一共 璃基板, 信號線, 個各自獨 料信號線 共電極層 電壓電性 導電的透 電極層之 相隔。 明之廣 電極層 且在該 複數條 立的晝 相互呈 位於此 相連。 明絕緣 間,將 視角液晶 ,和一隔 玻璃基板 資料信號 素電極。 垂直排列 片基板的 隔離絕緣 材質,並 此複數個 顯示器的電極結 離絕緣層。此片 上層表面的上方 線和複數個開關 此複數條掃描信 ’以定義一晝素 上方,並與液晶 M(pass i vat i on 且介於此複數個 個自獨立的晝素 構’包含一片基 基板上含有一玻 備有複數條掃描 元件’以及複數 號線和複數條資 矩陣(matrix)。 顯示器的共電極 1 ayer)係一.不 晝素電極與該共 電極和共電極層 對於每一晝素,掃描信號線與資料信號線的交又附 近至少有一開關元件。此開關元件的閘極(gate)連至播 描信號線,汲極(drain)連接至資料信號線,晝# 接至開關元件的源極(source)。 ^ ^
460731 發明說明(5) 本發明之上下層排列的電極結構,其晝素電極和共 極相交處自然形成電容儲存區,無需佔用額外的透光^。 隔離絕緣層上所需的接觸孔皆形成在畫素矩陣區域之外, 也無需佔用額外的透光區。也就是說,使開口透光率提 極一目的1 ’提供此廣視角液晶顯示器之電 m極結構模式來製成基板,此基板上並以每個晝:電 ΐ:::ϊ f ΐ。再覆蓋一隔離絕緣層後,以栅狀:銦錫 二度大,在後製成後段形成铜錫氧化物,也易 構的製作方法包 板上含有一玻璃 複數條掃描信號 ’以及複數個個 號線呈相互垂直 上’覆蓋一層隔 形成一共電極 資料訊號線的交 的閘極連接至掃 本發明之廣視角液晶顯示器之電 :有下列步驟:U) %成—片基板,此; ΐ板,在該玻璃基板上層表面的上方備有 料信號線和複數個開關4 自獨立的晝素電極,掃描 :列,以定義-畫素矩陣;(b)此片= :絕J層;以及’(〇在此片 叉點附近至少有一開;素杜掃描1號線與 负阀關7L件,此開關元件
460731 五、發明說明(6) 描仏號線,汲極連接至資料信號線,畫素電極則連接至此 開關元件的源極。 根據本發明,電性導通所需之接觸孔可形成在晝 陣區域之外,不會減少開口透光率。 、 Β ί Ϊ發明的較佳實施例中,上層共電極係呈複數條柵 形(herring bone shape)結構,下層晝素電極係 狀:構。在第一較佳實施例中’上層*電極呈栅 ^…構晝素電極和共電極未跨於資料信號線上。 較佳實施例中,上層共電極社椹 一 (τ〇Ρ-ΙΤ0)上,將查辛雷電極極建置於頂層銦錫氧化物 私蚀 將旦素電極和共電極跨於資料俨號蠄卜 較第一較佳實施例更能增加開口 °)、、、, 透光區。在第=較佳杏搞制由透光羊,更增大顯示器的
構。另外,為減小電阻值,上層並 Υ尾形、、、D 置,做橫向的連結,此即為本發;:第適當的位 極結構。 之第四較佳實施例的電 茲配合下列圖式、實施例之击 圍,將上述及本發明之其他目的與優;申請範 圖式之簡要說明 圖1係一習知液晶顯示器之單一晝素的 電極結構的頂視示
C:\patent\880099erso. ptd 边_731
意圖。 圖2說明圖1的剖面結構。 一實施例的單一書 一實施例的製作流 圖3係本發明之廣視角液晶顯示器之第 素的電極結構的一頂視示意圖。 圖4(A)〜4(F)係本發明之電極結構之第 圖5係本發明之廣损自 辛的雷朽社播/角曰顯示器《第二實施 <列的單一晝 京的電極、纟。構的一頂視示意圖。 旦
敍(A) 6 (G)係本發明之電極結構之第二實施例的製作流 程0 =7係本發明之電極結構之第三實施例的單一晝素的電極 L構的一頂視示意圖。 圖8係本發明之電極結構之第四實施例的單一畫素的電極 結構的一頂視示意圖。 圖號說明 102共電極 1 0 5薄膜電晶體 ..'···. 206隔離絕緣層
100電極結構 101晝素電極 掃描信號線104資料信號線 201下層共電極層202玻璃基板 203、204和205梳齒狀晝素電極 2 〇 7液晶層 2 0 8玻璃基板 3〇〇電極結構 301上層共電極 302下層畫素電極 303掃描信號線區域 304資料信號線區域
C:\patent\880099erso.ptd 第10頁 460731 五、發明說明(8) 3 〇 5薄膜電晶體 4 〇 1掃描信號線金屬層 4〇3玻璃基板 4 〇 5島狀區域 4〇7資料信號線金屬層 409栅狀共電極層 501 栅狀共電極層 5 0 3掃描信號線區域 5 0 6輔助共電極線區域 6 41隔離絕緣層 6 6 1絕緣層 7 0 1上層共電極 801上層共電極 發明之詳細說明 306辅助共電極線區域 402辅助共電極線金屬層 4 0 4 絕緣層 406晝素電極 4 0 8 隔離絕緣層 502平板狀晝素電極 5 0 4資料信號線區域 6 5 1晝素電極 671拇狀共電極層 圖3係本發明之廣視角液晶顯示器之第一實施例的單 晝素的電極結構3 〇 〇的一頂視示意.圖。參考圖3,此電極 結構300的上層共電極3〇1呈柵狀結構,而下層晝素電極 3 0 2呈平板狀結構。掃描信號線區域3 〇 3和該資料信號線區 域304呈相互垂直排列,以定義一晝素矩陣。 如圖3所不’在單—畫素裡,有一作為開關元件的薄 膜電晶體305位於掃描信號線區域3 〇3與資料信號線區域
第11頁 460731 五、發明說明(9) 304的父叉點附近。而,掃描信號線區域3〇3與資料信號線 區域304圍繞著晝素電極3〇2。另一邊的辅助共電極線 (auxiliary common line)區域3〇6與資料信號線區域3〇4. 亦呈相互垂直的關係。根據本發明,在單一晝素裡,作為 開關7L件&薄膜t晶體❸閘極係連接至信冑掃描線,沒極 連接至資料信號線,而源極則連接至畫素電極。 在此較佳實施例中,平板狀畫素電極302未跨於資料 信號線區域304和掃描信號線區域3〇3上,栅狀共電極層 301則延伸並跨於掃描信號線區域3〇3上。另一邊的平板狀 畫素電極3 0 2跨於輔助雷托綠p u g Λ。 ® ι,ι ^ v助,、電極線应域3〇6之上,柵狀共電極 層301則延伸而位於平板狀晝素電極3〇2之上。 ,發明之上層栅狀且延伸之共電極層的結才冓,增加了 留電荷產生的現i纟且’無角隅部份電場較強或有殘 的制ί:ί詳細說圖3之本發明之電極結構的第-實施例 的製作流程。根據太辂日日LL也丨, 1 j 覆蓋-隔離絕緣層於:片基:土作流程包括基板的形成; 成。基板的形成係沿以之板乂;以及,共電極層的形 流程;共電極層的形成n線y的剖面來說明製作的 輔助共電極線區域Γ:成的剖面則圖示另一邊含有
C:\patent\880099erso. ptd 第12頁 4β§731
圖4(A)〜4(F)詳細說明本發明第一實施例每一部份 製作步驟(fabrication step)。基板的形成可以使用刀' TN模式之液晶顯示器的製造方法來製成一薄膜電晶體& 板。本製作實施例中’先在一玻璃基板4〇3上形成%掃描"· 號線金屬層401和輔助共電極線金屬層4〇2,金屬層: 40 2通常在同一層並使用同一種材料來製成,如圖4 示之狀態。 在圖4(A)步驟之後,覆蓋一絕緣層(insuUt〇r)4〇4並 形成島狀區域(丨5 1311(1-1丨1^^§1〇11)405以提供一薄膜電 晶體的主動層(active layer) ’如圖4(B)所示之狀態、。此 薄膜電晶體至少含有一閘極、一;及極和一源極。 在圖4(B)步驟之後,形成銦錫氧化物以製作平板狀晝 素電極406,晝素電極406未跨於島狀區域4〇5上,如圖 4(C)所示之狀態。在畫素矩陣區域之外,可藉由形成複數 個接觸孔(contact hole),以與金屬層401和4〇2電性導 通0 圖4(C)步驟之後’在島狀區域4 〇5的上方形成資料信 號線金屬層407,如圖4(D)所示之狀態。薄膜電晶體的閘 極係連接至信號掃描線4 01,而汲極連接至資料信號線金 屬層407,源極則連接至畫素電極406。
C.\patent\880〇99erso. ptd 第13頁 ^ 6 Ο 7 3 *j
層 408, 藉由形 導通。 圖4(D)步驟之後,於此片基板上,覆蓋〜隔離絕緣 如圖4 (Ε )所示之狀態’在畫素矩陣區域之外,可 成複數個接觸孔,以與資料信號線金屬層4〇 7電性 最後,在晝素電極406和隔離絕緣層408的上方,來布 銦錫氧化物以製作柵狀共電極層4〇9,如圖4(F)所示之》狀 〜、共電極層4 〇 9呈栅狀並向兩邊延伸,而與資袓%綠 金屬層平行(未示於圖4(F)中)。 杆^唬線 一 圖5係本發明之廣視角液晶顯示器之第二實施例的單 一晝素的電極結構的一頂視示意圖。參考圖5,在此第二 較.佳實施例中’平板狀晝素電極5 〇 2.係跨於資料信號線區 域304上’柵狀共電極層501亦延伸並跨於掃描信號&線區域 3 03上。另一邊,平板狀畫素電極5〇2跨於輔助共電極線區 域3 0 6之上,柵狀共電極層5 〇 1則延伸而位於平板狀畫素電 極5 0 2之上。其餘’與第一較佳實施例相同。 圖6(A)〜6(G)詳細說明本發明第二實施例的製作流 程。 同樣的,沿著圖5之線A-A’ 、線B-B’和線C-C,的剖 面,來說明此第二實施例的製作流程。
C:\patent\880099erso. ptd 第 14 頁 460731
圖6(A)和6(B)所示的步驟與圖4(A)和4(6)相同。繼 6(B)步驟之後,在島狀區域4〇5的上方I,先形成資料信號 線金屬層4 0 7 ’如圖6 (C)所示之狀態。 圖6(C)步驟之後,在此基板的上方,覆蓋一隔離絕緣 層6 41,並使此隔離絕緣層的頂部表面呈水平狀,如圖 6 (D)所示之狀態。 在圖6 (D)步驟後,形成銦錫氧化物以製作平板狀晝素r 電極651,並且使晝素電極651跨在島狀區域4〇5的上方, 如圖6(E)所示之狀態。 繼圖6(E)步驟後,在此基板的上方,覆蓋一絕緣層 6 6 1,如圖6 (F )所示的狀態。在晝素區域之外,也可以藉 由形成複數個接觸孔,來達成電性導通。 曰 最後,在畫素電極651和隔離絕緣層661的上方,形成 銦錫氧化物以製作栅狀共電極層671,如圖6(G)所示之狀 態0 此第二實施例裡,將晝素電極和共電極跨於資料信號 線上,較第一較佳實施例更能增加開口透光率,更增大顯 示器的透光區。 a
C:\patent\880099erso. ptd 第15頁 460731 五、發明說明(13) 構,til之電極結構,上層共電極也可設計成箭尾形結 且有气屋开ιΓμ之第二較佳實施例,其中,上層共電極701 701的I士禮孫& 一 實包例中,上層共電極 ° '、置於頂層銦錫氧化物上,盘第-實施你| _ 似。根據本發明,也可以 $ 第一只施例類 於資科^線上,與第-實施例類似。未跨 另外J 了減小電阻,上層共電極 電極801在掃描信號= '施例的電極結構,上層共 知線&域5 0 3上,兩兩橫向連結。 唯,以上所述去 杜本[ 不能以此限定本發明3為”明之較佳實施例而已,當 利範圍所4乍之均冑變=範圍丄即大凡依本發明申請專 之範圍内。 /、>飾,^應仍屬本發明專利涵蓋
Claims (1)
- 一隔離絕緣層,係一不導電的透明絕緣材質,並介於該 複數個晝素電極與該共電極層之間,以將該複數個各自Μ 獨立的晝素電極與該共電極層相隔; 其中,對於每一晝素,該資料信號線位於該掃描信號 的上方,該掃描信號線與該資料信號線的交叉點附近至、、’ 少有一開關元件,該開關元件的閘極連接至該信號掃描 線,没極連接至該資料信號線,而該畫素電極連 開關元件的源極。 2.如申請專利範圍第i項所述之廣視角液晶顯示器的坧 結構,其中’該複數個畫素電極係跨在該複數 极 緒娩从I* + 丨求員料枱 3.如申請專利範圍第丨項所述之廣視角液晶顯示器的 結構,其中,該共電極層係以透明的導電材料製、極 Λ·' . .项* ’ 並第17頁 460731 六、申請專利範® tr广Π請第3項所述之/視角液晶顯示器的電極 m構’其中,該條狀為柵狀或箭尾狀。 5. 如申請專利範園第3項所述之廣視角液晶炻 結構,其中,該條狀共電極間,兩兩橫向連妗 、 6. 如申請專利範圍第丨項所述之液晶顯示 其中,該共電極層係以透明的導電材15的電極結構, 狀形成。 寸I成,並以平板 7.如申請專利範圍第1項所述之廣視 極 結構,其中,該共電極層係以非 晶顯示器的電 並以條狀形成。 的導電材料製成, 8. 如申請專利範圍第7項所述之廇 結構,其中,該條狀為栅狀或箭尾狀 阳顯示器的電極 9. 如申請專利範圍第7項所述之廣視 結構,其中,該條狀共電極間,兩^角液晶顯示器的電極 呵兩橫向連結。 1 0 ·如申請專利範圍第1項所述之廣、 結構,其中,該畫素電極係以透明= 晶顯示器的電極 並以平板狀形成。 導電材料製成,第18.頁 460731 六'申請專利範圍 11.如申請專利範圍第1項所述之廣視角液晶顯示器的電極 結構,其中,該晝素電極係以透明的導電材料製成, 並以梳齒狀形成。 12.如申請專利範圍第i項所述之廣視角液晶顯示器的電極 結構’其中’該畫素電極係以非透明的導電材料製 成,並以梳齒狀形成。 13.如申請專利範圍第】項所述之廣視角液晶顯示器的 結構’其中,該隔離絕緣層具有複數個接觸孔,且該桠 接觸孔形成在該晝素矩陣區域之外,來達成該電極 14·如申請專利範圍第i項所述之廣視角液晶顯示器 結構,其中,該共電極層與該複數個晝素電極之間電極 隔離絕緣層,係經化學沉積而形成。 S 、 示器的電極 而該開 1 5.如申請專利範圍第i項所述之廣視角液晶顯 結構’其中’該片基板係一薄膜電晶體基板, 關元件係薄膜電晶體。 請Λ利範= 電第19頁 460731 六、申請專利範圍 的隔離絕緣層,係該薄膜電晶體上的絕緣膜 17.如申請專利範圍第1項所述之廣視角液晶顯示器的電極 結構,其中,該共電極層與該複數個畫素電極之間的 隔離絕緣層,係經塗佈製程而形成。 1 8. —種廣視角液晶顯示器之電極結構的製作方法,包含 下列步驟: _ (a) 形成一片基板’該片基板備有一玻螭基板,且該片 基板在該玻璃基板上層表面的上方備有複數條婦描 信號線’複數條資料信號線和複數個開關元件,以 及複數個各自獨立的晝素電極,該複數條掃描線和 該複數條資料訊號線呈相互垂直排列,以定義一晝 素矩陣; (b) 覆蓋一隔離絕緣層於該片基板上;以及, (c) 在該片基板上方形成共電極層; 其中,對於每一畫素,該掃描線與該資料訊號線的交 叉點附近至少有一開關元件,該開關元件的閘極連接 至該掃描信號線,而汲極連接至該資料信號線,該者 素電極連接至該開關元件的源極。 旦 1 9.如申請專利範圍第〗8項所述之 極結構的製作方法,其中,步 曰顯不器之電 Can^ . ,驟(a)更包含下列步驟: 在該玻璃基板表面上形成該複數條掃描信號 460731 六、申請專利範圍 (a2)提供複數個各自獨立的晝素 複 件;其中’對於每一晝,,每一開關元件至 極以連接至該掃描信號線’一汲極以連接至該資料 號線,和一源極以與該晝素電極連接;以及,,° 信在冑複數條掃描信號線的上方形成該*數條資料 該複㈡:::線::方該複數個晝素電極係跨在 =,沾如&申請專利範圍第19項所述之廣視角液晶顯示器之雷 極,,·σ構的製作方法,其中,該共電極層 電材料製成,並以條狀形r 远月的導 請專利範圍第19項所述之廣視角液晶顯示器之雷 極、纟。構的製作方法,其中,該條狀為柵狀或箭尾狀。電 23·如申請專利範圍第19項所述之廣視角液晶 極結構的製作方法,其中,該條狀共電極 :之電 向連結。 啊馒 24.如申請專利範圍第丨9項所述之液晶顯示器之電 的製作方法,其中,該共電極層係以透明的導電材料^構460731 六、申請專利範圍 製成’並以平板狀形成。 25.如申請專利範圍第19項所述之 、曰 導電材料製成,並以條狀形成。層係以非透明的 極、,、。構的氣作方法,其中,該條狀為柵狀或箭尾狀。 如塊申7專利範圍第19項所述之廣視角液晶顯示器之電 ϋ的製作方法,其中,該條狀共電極間,兩兩橫 问連結。 2 g , .咬 如甲請專利範圍第1 9項所述之廣視角液晶顯示器之電 =、’’°構的製作方法,其中,該晝素電極係以透明的導 電材料製成,並以平板狀形成。 如申凊專利範圍第1 9項所述之廣視角液晶顯示器之電 結構的製作方法,其中,該畫素電極係以透明的導 材料製成’並以梳齒狀形成。 3 〇 1 電 申咱專利範圍第1 9項所逃之廣視角液晶顯禾器 結構的製作方法,其中,該畫素電極係以非透明的 導電材料製成,並以梳齒狀形成。460731 ----— 六、申請專利範圍 31_如申請專利範園第Η項所述之廣視角液晶顯示器之電 極、‘構的製作方法,其中,該共電極詹與該複數個晝 素電極之間的隔離絕緣層,係經化學沉積而形成。 32.如申請專利範圍第1 9項所述之廣視角液晶顯示器之電 極結構的製作方法,其中,該片基板係一薄膜電晶體 基板’而該開關元件係薄膜電晶體。 33·如申請專利範圍第1 9項所述之廣視角液晶顯示器之電 極結構的製作方法,其中,該共電極層與該複數個晝 素電極之間的隔離絕緣層,係經塗佈製程而形成。 34_如申請專利範圍第1 9項所述之廣視角液晶顯示器之電 極結構的製作方法,其中,在步驟(al)之後,更包含 在該複數條掃描信號線的上方,覆蓋一絕緣層的步 35.如申請專利範圍第32項所述之廣視角液晶顯示器之電 極、纟。構的製作方法,其中,該共電極層與該複數個晝 素電極之間的隔離絕緣層,係該薄膜電晶體上的絕緣 36.如申請專利範圍第19項所述之廣視角液晶顯示器之電第23頁 460731第24頁
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-
1999
- 1999-09-03 TW TW088115182A patent/TW460731B/zh not_active IP Right Cessation
- 1999-11-20 US US09/444,141 patent/US20010046027A1/en not_active Abandoned
-
2000
- 2000-01-31 JP JP2000022011A patent/JP2001083540A/ja not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103105711A (zh) * | 2011-11-09 | 2013-05-15 | 三菱电机株式会社 | 布线构造和具备其的薄膜晶体管阵列基板以及显示装置 |
CN103105711B (zh) * | 2011-11-09 | 2016-04-06 | 三菱电机株式会社 | 布线构造和具备其的薄膜晶体管阵列基板以及显示装置 |
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JP2001083540A (ja) | 2001-03-30 |
US20010046027A1 (en) | 2001-11-29 |
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