JP4747911B2 - 液晶パネル用アレイ基板および液晶パネルならびにこれらの製造方法 - Google Patents
液晶パネル用アレイ基板および液晶パネルならびにこれらの製造方法 Download PDFInfo
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- JP4747911B2 JP4747911B2 JP2006095760A JP2006095760A JP4747911B2 JP 4747911 B2 JP4747911 B2 JP 4747911B2 JP 2006095760 A JP2006095760 A JP 2006095760A JP 2006095760 A JP2006095760 A JP 2006095760A JP 4747911 B2 JP4747911 B2 JP 4747911B2
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133388—Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
Description
Claims (4)
- 表示領域内に層間絶縁膜を介して積層され液晶の配向状態を制御する電界を形成する下層表示電極と上層表示電極と、前記表示領域の外側の周辺領域内に配置されたキャパシタと、を備えた液晶パネル用アレイ基板を製造する方法において、
回路層上に下層導電膜を形成し前記下層導電膜によって前記下層表示電極を形成する下層形成工程と、
前記下層表示電極上に絶縁膜を形成し前記絶縁膜によって前記層間絶縁膜を形成する絶縁膜形成工程と、
前記層間絶縁膜上に上層導電膜を形成し前記上層導電膜によって前記上層表示電極を形成する上層形成工程と、
を備え、
前記下層形成工程で前記周辺領域内の前記回路層上にも前記下層導電膜を形成し前記周辺領域内の前記下層導電膜によって前記キャパシタの下層キャパシタ電極を形成し、前記上層形成工程で前記下層キャパシタ電極の上方にも前記上層導電膜を形成し前記下層キャパシタ電極上方の前記上層導電膜によって前記キャパシタの上層キャパシタ電極を形成することを特徴とする液晶パネル用アレイ基板の製造方法。 - 請求項1に記載の液晶パネル用アレイ基板の製造方法において、
前記絶縁膜形成工程で前記下層キャパシタ電極上にも前記絶縁膜を形成し前記下層キャパシタ電極上の前記絶縁膜によって前記キャパシタのキャパシタ絶縁膜を形成し、前記上層形成工程で前記キャパシタ絶縁膜上に前記上層キャパシタ電極を形成することを特徴とする液晶パネル用アレイ基板の製造方法。 - 表示領域内に層間絶縁膜を介して積層された下層表示電極と上層表示電極と、前記表示領域の外側の周辺領域内に配置されたキャパシタと、を含んで構成されたアレイ基板と、前記アレイ基板に対向配置された対向基板と、前記アレイ基板と前記対向基板との間に封入された液晶とを備え、前記下層表示電極と前記上層表示電極との間の電界によって前記液晶の配向状態を制御する液晶パネルを製造する方法において、
回路層上に下層導電膜を形成し前記下層導電膜によって前記下層表示電極を形成する下層形成工程と、
前記下層表示電極上に絶縁膜を形成し前記絶縁膜によって前記層間絶縁膜を形成する絶縁膜形成工程と、
前記層間絶縁膜上に上層導電膜を形成し前記上層導電膜によって前記上層表示電極を形成する上層形成工程と、
を備え、
前記下層形成工程で前記周辺領域内の前記回路層上にも前記下層導電膜を形成し前記周辺領域内の前記下層導電膜によって前記キャパシタの下層キャパシタ電極を形成し、前記上層形成工程で前記下層キャパシタ電極の上方にも前記上層導電膜を形成し前記下層キャパシタ電極上方の前記上層導電膜によって前記キャパシタの上層キャパシタ電極を形成することを特徴とする液晶パネルの製造方法。 - 表示領域内に層間絶縁膜を介して積層された下層表示電極および上層表示電極と前記表示領域の外側の周辺領域内に配置され互いに接続された回路素子およびキャパシタとを含んで構成されたアレイ基板と、前記アレイ基板に液晶を介して対向配置された対向基板と、を備え、前記下層表示電極と前記上層表示電極との間の電界によって前記液晶の配向状態を制御する液晶パネルにおいて、
前記キャパシタは、
前記下層表示電極と同じ材料で構成された下層キャパシタ電極と、
前記上層表示電極と同じ材料で構成された上層キャパシタ電極と、
前記下層キャパシタ電極と前記上層キャパシタ電極とに挟まれたキャパシタ絶縁膜と、
を含んで構成され、
前記キャパシタと前記回路素子とが積層され、
前記下層キャパシタ電極は、前記下層表示電極と同じ厚さで構成され、
前記上層キャパシタ電極は、前記上層表示電極と同じ厚さで構成されていることを特徴とする液晶パネル。
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JP2006095760A JP4747911B2 (ja) | 2006-03-30 | 2006-03-30 | 液晶パネル用アレイ基板および液晶パネルならびにこれらの製造方法 |
US11/729,449 US7697082B2 (en) | 2006-03-30 | 2007-03-29 | Array substrate for liquid crystal panel and liquid crystal panel and manufacturing method thereof |
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US8188564B2 (en) * | 2007-12-27 | 2012-05-29 | Sharp Kabushiki Kaisha | Semiconductor device having a planarizing film formed in a region of a step portion |
JP5974415B2 (ja) * | 2011-10-05 | 2016-08-23 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
KR102240894B1 (ko) * | 2014-02-26 | 2021-04-16 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
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JPH09146108A (ja) * | 1995-11-17 | 1997-06-06 | Semiconductor Energy Lab Co Ltd | 液晶表示装置およびその駆動方法 |
JPH09311342A (ja) * | 1996-05-16 | 1997-12-02 | Semiconductor Energy Lab Co Ltd | 表示装置 |
JP3126661B2 (ja) * | 1996-06-25 | 2001-01-22 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP4454713B2 (ja) * | 1999-03-17 | 2010-04-21 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
US6630977B1 (en) * | 1999-05-20 | 2003-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with capacitor formed around contact hole |
TW460731B (en) * | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP2001281695A (ja) * | 2000-03-30 | 2001-10-10 | Sharp Corp | 薄膜静電容量の製造方法および液晶表示装置 |
JP4556341B2 (ja) | 2001-03-30 | 2010-10-06 | セイコーエプソン株式会社 | 液晶表示装置および電子機器 |
JP4047586B2 (ja) * | 2002-01-10 | 2008-02-13 | Nec液晶テクノロジー株式会社 | 横電界方式のアクティブマトリクス型液晶表示装置 |
JP4211644B2 (ja) * | 2004-03-15 | 2009-01-21 | セイコーエプソン株式会社 | 電気光学装置の製造方法 |
CN102331638B (zh) * | 2005-12-05 | 2015-11-25 | 株式会社半导体能源研究所 | 液晶显示器 |
JP4882662B2 (ja) * | 2006-01-12 | 2012-02-22 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
JP4572854B2 (ja) * | 2006-03-29 | 2010-11-04 | ソニー株式会社 | 液晶装置及び電子機器 |
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US20070229721A1 (en) | 2007-10-04 |
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