JP2007271801A - 液晶パネル用アレイ基板および液晶パネルならびにこれらの製造方法 - Google Patents
液晶パネル用アレイ基板および液晶パネルならびにこれらの製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 89
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 86
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000003990 capacitor Substances 0.000 claims abstract description 164
- 239000010410 layer Substances 0.000 claims abstract description 116
- 239000011229 interlayer Substances 0.000 claims abstract description 63
- 230000002093 peripheral effect Effects 0.000 claims abstract description 47
- 230000005684 electric field Effects 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims description 19
- 239000010408 film Substances 0.000 description 177
- 238000000034 method Methods 0.000 description 25
- 239000004065 semiconductor Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000010354 integration Effects 0.000 description 3
- 101000911772 Homo sapiens Hsc70-interacting protein Proteins 0.000 description 2
- 101001139126 Homo sapiens Krueppel-like factor 6 Proteins 0.000 description 2
- 101000661807 Homo sapiens Suppressor of tumorigenicity 14 protein Proteins 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 102100029860 Suppressor of tumorigenicity 20 protein Human genes 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 101000710013 Homo sapiens Reversion-inducing cysteine-rich protein with Kazal motifs Proteins 0.000 description 1
- 101000585359 Homo sapiens Suppressor of tumorigenicity 20 protein Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133388—Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
【解決手段】液晶パネル用アレイ基板100では画素電極131と共通電極133とが層間絶縁膜132を挟んで積層され、両電極131,133間の電界によって液晶の配向状態を制御する。周辺領域A20内のキャパシタ140において下層キャパシタ電極141と上層キャパシタ電極143とはキャパシタ絶縁膜142を挟んで積層されている。下層キャパシタ電極141および画素電極131を単一の導電膜から形成し、上層キャパシタ電極143および共通電極133を単一の導電膜から形成することにより、キャパシタ140が回路層120のTFT120N,120P上に積層される。層間絶縁膜132とキャパシタ絶縁膜142とを単一の絶縁膜から形成することも可能である。
【選択図】図5
Description
Claims (6)
- 表示領域内に層間絶縁膜を介して積層され液晶の配向状態を制御する電界を形成する下層表示電極と上層表示電極と、前記表示領域の外側の周辺領域内に配置されたキャパシタと、を備えた液晶パネル用アレイ基板を製造する方法において、
回路層上に下層導電膜を形成し前記下層導電膜によって前記下層表示電極を形成する下層形成工程と、
前記下層表示電極上に絶縁膜を形成し前記絶縁膜によって前記層間絶縁膜を形成する絶縁膜形成工程と、
前記層間絶縁膜上に上層導電膜を形成し前記上層導電膜によって前記上層表示電極を形成する上層形成工程と、
を備え、
前記下層形成工程で前記周辺領域内の前記回路層上にも前記下層導電膜を形成し前記周辺領域内の前記下層導電膜によって前記キャパシタの下層キャパシタ電極を形成し、前記上層形成工程で前記下層キャパシタ電極の上方にも前記上層導電膜を形成し前記下層キャパシタ電極上方の前記上層導電膜によって前記キャパシタの上層キャパシタ電極を形成することを特徴とする液晶パネル用アレイ基板の製造方法。 - 請求項1に記載の液晶パネル用アレイ基板の製造方法において、
前記絶縁膜工程で前記下層キャパシタ電極上にも前記絶縁膜を形成し前記下層キャパシタ電極上の前記絶縁膜によって前記キャパシタのキャパシタ絶縁膜を形成し、前記上層形成工程で前記キャパシタ絶縁膜上に前記上層キャパシタ電極を形成することを特徴とする液晶パネル用アレイ基板の製造方法。 - 表示領域内に層間絶縁膜を介して積層された下層表示電極と上層表示電極と、前記表示領域の外側の周辺領域内に配置されたキャパシタと、を含んで構成されたアレイ基板と、前記アレイ基板に対向配置された対向基板と、前記アレイ基板と前記対向基板との間に封入された液晶とを備え、前記下層表示電極と前記上層表示電極との間の電界によって前記液晶の配向状態を制御する液晶パネルを製造する方法において、
回路層上に下層導電膜を形成し前記下層導電膜によって前記下層表示電極を形成する下層形成工程と、
前記下層表示電極上に絶縁膜を形成し前記絶縁膜によって前記層間絶縁膜を形成する絶縁膜形成工程と、
前記層間絶縁膜上に上層導電膜を形成し前記上層導電膜によって前記上層表示電極を形成する上層形成工程と、
を備え、
前記下層形成工程で前記周辺領域内の前記回路層上にも前記下層導電膜を形成し前記周辺領域内の前記下層導電膜によって前記キャパシタの下層キャパシタ電極を形成し、前記上層形成工程で前記下層キャパシタ電極の上方にも前記上層導電膜を形成し前記下層キャパシタ電極上方の前記上層導電膜によって前記キャパシタの上層キャパシタ電極を形成することを特徴とする液晶パネルの製造方法。 - 表示領域内に層間絶縁膜を介して積層され液晶の配向状態を制御する電界を形成する下層表示電極と上層表示電極と、前記表示領域の外側の周辺領域内に配置され互いに接続された回路素子とキャパシタと、を備えた液晶パネル用アレイ基板において、
前記キャパシタは、
前記下層表示電極と同じ材料および同じ厚さで構成された下層キャパシタ電極と、
前記上層表示電極と同じ材料および同じ厚さで構成された上層キャパシタ電極と、
前記下層キャパシタ電極と前記上層キャパシタ電極とに挟まれたキャパシタ絶縁膜と、
を含んで構成され、
前記キャパシタと前記回路素子とが積層されていることを特徴とする液晶パネル用アレイ基板。 - 請求項4に記載の液晶パネル用アレイ基板において、
前記キャパシタ絶縁膜は前記層間絶縁膜と同じ材料および同じ厚さで構成されていることを特徴とする液晶パネル用アレイ基板。 - 表示領域内に層間絶縁膜を介して積層された下層表示電極および上層表示電極と前記表示領域の外側の周辺領域内に配置され互いに接続された回路素子およびキャパシタとを含んで構成されたアレイ基板と、前記アレイ基板に液晶を介して対向配置された対向基板と、を備え、前記下層表示電極と前記上層表示電極との間の電界によって前記液晶の配向状態を制御する液晶パネルにおいて、
前記キャパシタは、
前記下層表示電極と同じ材料および同じ厚さで構成された下層キャパシタ電極と、
前記上層表示電極と同じ材料および同じ厚さで構成された上層キャパシタ電極と、
前記下層キャパシタ電極と前記上層キャパシタ電極とに挟まれたキャパシタ絶縁膜と、
を含んで構成され、
前記キャパシタと前記回路素子とが積層されていることを特徴とする液晶パネル。
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JP2000267128A (ja) * | 1999-03-17 | 2000-09-29 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
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JP2005260145A (ja) * | 2004-03-15 | 2005-09-22 | Seiko Epson Corp | 電気光学装置及びその製造方法、並びに電子機器 |
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US20070229721A1 (en) | 2007-10-04 |
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