CN105633096B - 液晶显示面板、tft基板及其制造方法 - Google Patents

液晶显示面板、tft基板及其制造方法 Download PDF

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CN105633096B
CN105633096B CN201610006482.0A CN201610006482A CN105633096B CN 105633096 B CN105633096 B CN 105633096B CN 201610006482 A CN201610006482 A CN 201610006482A CN 105633096 B CN105633096 B CN 105633096B
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tft substrate
common electrode
electrode layer
insulating layer
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CN105633096A (zh
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郝思坤
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明公开了一种TFT基板的制造方法，包括：在衬底层形成第一金属层；在第一金属层上形成第一绝缘层；在第一绝缘层上形成半导体活性层；形成第二金属层，其中，第二金属层包括设置在半导体活性层上的漏极和源极以及设置在第一绝缘层上的第一公共电极层；在第二金属层上形成第二绝缘层；在第二绝缘层上形成树脂层；在树脂层上形成ITO层，其中，ITO层包括第二公共电极层；其中，第一公共电极层和第二公共电极层分别与TFT基板的透光区域对应设置。本发明还公开一种液晶显示面板和TFT基板。通过上述方式，本发明能够增大存储电容的容量，避免因增加存储电容的容量而造成的开口率下降的问题发生。

Description

液晶显示面板、TFT基板及其制造方法
技术领域
本发明涉及液晶技术领域，特别是涉及一种液晶显示面板、TFT基板及其制造方法。
背景技术
液晶显示面板是目前使用最广泛的一种平板显示面板，其已经逐渐成为各种电子设备如移动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记本电脑屏幕所广泛应用且具有高分辨率彩色屏幕的显示面板。随着液晶显示面板技术的发展进步，人们对液晶显示面板的显示品质、外观设计、低成本和高穿透率等提出了更高的要求。
IPS(平面控制)模式的液晶显示面板让观察者任何时候都只能看到液晶分子的短轴，因此在各个角度上观看的画面都不会有太大差别，这样就比较完美地改善了IPS模式的液晶显示面板的视角。然而，如图1所示，现有技术中的IPS模式的液晶显示面板的内部结构中，ITO层包括像素电极层128和公共电极层129，像素电极层128和公共电极层129均设置在树脂层上，这样会造成存储电容的容量小，因此需要较大的击穿电压来击穿，从而影响IPS模式的液晶显示面板的画面品质。而为了保证IPS模式的液晶显示面板的画面品质，常用的方法是额外增加存储电容的容量，但是这样会导致开口率下降，使得IPS模式的液晶显示面板的穿透率变低，同样影响IPS模式的液晶显示面板的画面品质。
综上所述，有必要提供一种液晶显示面板、TFT基板及其制造方法以解决上述问题。
发明内容
本发明主要解决的技术问题是提供一种液晶显示面板、TFT基板及其制造方法，能够避免因增加存储电容的容量而造成的开口率下降的问题发生。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种TFT基板的制造方法，该方法包括：在衬底层形成第一金属层；在第一金属层上形成第一绝缘层；在第一绝缘层上形成半导体活性层；形成第二金属层，其中，第二金属层包括设置在半导体活性层上的漏极和源极以及设置在第一绝缘层上的第一公共电极层；在第二金属层上形成第二绝缘层；在第二绝缘层上形成树脂层；在树脂层上形成ITO层，其中，ITO层包括第二公共电极层；其中，第一公共电极层和第二公共电极层分别与TFT基板的透光区域对应设置。
其中，该方法还包括：在树脂层上设置有露出第二绝缘层的凹槽，其中，凹槽与TFT基板的透光区域对应设置。
其中，设置在TFT基板的透光区域的第二公共电极层设置在凹槽上。
其中，ITO层还包括像素电极层，像素电极层设置在TFT基板的非透光区域。
其中，该方法还包括：在树脂层上设置有露出第二金属层的过孔，其中，过孔与TFT基板的非透光区域对应设置，像素电极层设置在过孔上。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种TFT基板，该TFT基板包括衬底层、设置在衬底层上的第一金属层、设置在第一金属层上的第一绝缘层、设置在第一绝缘层上的半导体活性层、第二金属层、设置在第二金属层上的第二绝缘层、设置在第二绝缘层上的树脂层以及设置在树脂层上的ITO层，其中，第二金属层包括设置在半导体活性层上的漏极和源极以及设置在第一绝缘层上的第一公共电极层，ITO层包括第二公共电极层，第一公共电极层和第二公共电极层分别与TFT基板的透光区域对应设置。
其中，树脂层设置有露出第二绝缘层的凹槽，凹槽与TFT基板的透光区域对应设置，设置在TFT基板的透光区域的第二公共电极层设置在凹槽上。
其中，ITO层还包括像素电极层，像素电极层设置在TFT基板的非透光区域。
其中，树脂层上设置有露出第二金属层的过孔，其中，过孔与TFT基板的非透光区域对应设置，像素电极层设置在过孔上。
为解决上述技术问题，本发明采用的又一个技术方案是：提供一种液晶显示面板，该液晶显示面板包括上述任一项的TFT基板。
本发明的有益效果是：区别于现有技术的情况，本发明的TFT基板的制造方法包括：在衬底层形成第一金属层；在第一金属层上形成第一绝缘层；在第一绝缘层上形成半导体活性层；形成第二金属层，其中，第二金属层包括设置在半导体活性层上的漏极和源极以及设置在第一绝缘层上的第一公共电极层；在第二金属层上形成第二绝缘层；在第二绝缘层上形成树脂层；在树脂层上形成ITO层，其中，ITO层包括第二公共电极层；其中，第一公共电极层和第二公共电极层分别与TFT基板的透光区域对应设置。通过上述方式，本发明能够增大存储电容的容量，避免因增加存储电容的容量而造成的开口率下降的问题发生，同时能够使得液晶显示面板的穿透率变大，有效提升液晶显示面板的画面品质。
附图说明
图1是现有技术液晶显示面板的结构示意图；
图2是本发明液晶显示面板的结构示意图；
图3是本发明TFT基板的制造方法的流程示意图。
具体实施方式
下面结合附图和实施方式对本发明进行详细说明。
本发明公开一种显示装置，该显示装置包括液晶显示面板，其中，液晶显示面板优选为IPS模式液晶显示面板。具体地，该液晶显示面板可以是采用第一代IPS技术针对TN模式的弊病提出了全新的液晶排列方式的液晶显示面板，其可以实现较好的可视角度；该液晶显示面板也可以是采用第二代IPS技术(S-IPS即Super-IPS)采用人字形电极，引入双畴模式的液晶显示面板，其可以改善液晶显示面板在某些特定角度的灰阶逆转现象；该液晶显示面板还可以采用第三代IPS技术(AS-IPS即Advanced Super-IPS)的液晶显示面板，其通过减小液晶分子间距离，从而可以提高开口率，获得更高亮度。
如图2所示，图2是本发明液晶显示面板的结构示意图。该液晶显示面板包括间隔设置的第一基板21和第二基板22以及设置在第一基板21和第二基板22之间的液晶层23。在本实施例中，第一基板21为CF基板(彩色滤光阵列基板)，第二基板22为TFT基板(薄膜晶体管阵列基板)。
TFT基板包括衬底层221、第一金属层222、第一绝缘层223、半导体活性层224、第二金属层225、第二绝缘层226、树脂层227和ITO(导电玻璃)层(228、229)。第一金属层222设置在衬底层221上，第一绝缘层223设置在第一金属层222上，半导体活性层224设置在第一绝缘层223上的，第二金属225分别设置在半导体活性层224和第一绝缘层223上，第二绝缘层226设置在第二金属层225上，树脂层227设置在第二绝缘层226上，ITO层257设置在树脂层226上。
其中，第二金属层225包括源极2251、漏极2252和第一公共电极层2253。源极2251和漏极2252分别设置在半导体活性层224上，第一公共电极层2253设置在第一绝缘层223上。在本实施例中，第一公共电极层2253与TFT基板的透光区域A-A对应设置。
树脂层227设置有露出第二绝缘层226的凹槽2271和设置有露出第二金属层225的过孔2272。凹槽2271与TFT基板的透光区域A-A对应设置，即凹槽2271设置液晶显示面板的透光区域A-A对应的位置。过孔2272与TFT基板的非透光区域对应设置。具体地，树脂层227为平坦钝化层，即聚四氟乙烯层。
ITO层(228、229)包括像素电极层228和第二公共电极层229。在本实施例中，第二公共电极层229与TFT基板的透光区域A-A对应设置。具体地，像素电极层228设置在TFT基板的非透光区域；第二公共电极层229部分设置在TFT基板的透光区域，第二公共电极层229部分设置在TFT基板的非透光区域。优选地，设置在TFT基板的透光区域A-A的第二公共电极层229设置在凹槽2270上，像素电极层229设置在过孔2272上。
在本实施例中，第一公共电极层2253设有多个，间隔设置在透光区域A-A对应的第一绝缘层223上，第二公共电极层229也设有多个，间隔设置在透光区域A-A对应的第二绝缘层226上。其中，第一公共电极层2253与第二公共电极层229是一一对应设置的。当然，在一些实施例中，第一公共电极层2253与第二公共电极层229交叉对应设置。
应理解，本发明并不限定通过凹槽2271露出第二绝缘层226，在一些实施例中，凹槽2271可以不穿过树脂层227，凹槽2271的深度可以根据实际需要而设定，只要凹槽2271能够满足降低第一公共电极层2253与第二公共电极层229之间的距离即可。值得注意的是，凹槽2271的深度跟液晶显示面板的存储电容的容量值有关，即凹槽2271的深度与存储电容的容量值成正比例关系，即凹槽2271的深度越深，第一公共电极层2253与第二公共电极层229形成的存储电容的容量值越大，使得液晶显示面板的存储电容的容量值越大。
本实施例通过第二金属层225形成新的第一公共电极层2253，与原ITO层的第二公共电极层229形成新的存储电容，相比现有技术，本发明能够增加液晶显示面板的存储电容的容量。进一步地，本实施例通过在树脂层227所对应的透光区域A-A上挖孔形成凹槽2271，且第二公共电极层229设置在凹槽2271上，从而降低了第一公共电极层2253与第二公共电极层229之间的距离，进一步加大了存储电容的容量，同时树脂层227所对应的非透光区域的厚度保持不变，不影响液晶显示面板的寄生电容的容量。
如图3所示，图3是本发明TFT基板的制造方法的流程示意图。该方法包括以下步骤：
步骤S101：在衬底层221形成第一金属层222。
步骤S102：在第一金属层222上形成第一绝缘层223。
步骤S103：在第一绝缘层223上形成半导体活性层224。
步骤S104：形成第二金属层225，其中，第二金属层225包括设置在半导体活性层224上的漏极2252和源极2251以及设置在第一绝缘层223上的第一公共电极层2253。
应理解，在步骤S104中，在形成第二金属层225时，需要将第二金属层225形成漏极2252和源极2251时，还需要将第二金属层225形成第一公共电极层2253，通过形成第二金属层225的步骤形成具有漏极2252、源极2251和第一公共电极层2253，能够节省制造成本。
步骤S105：在第二金属层225上形成第二绝缘层226。
步骤S106：在第二绝缘层226上形成树脂层227。
在步骤S106中，还包括在树脂层227上设置有露出第二绝缘层226的凹槽2271的步骤。其中，凹槽2251与TFT基板的透光区域A-A对应设置。应理解，本发明并不限定通过凹槽2271露出第二绝缘层226，在一些实施例中，凹槽2271可以不穿过树脂层227，凹槽2271的深度可以根据实际需要而设定，只要凹槽2271能够满足降低第一公共电极层2253与第二公共电极层229之间的距离即可。值得注意的是，凹槽2271的深度跟液晶显示面板的存储电容的容量值有关，即凹槽2271的深度与存储电容的容量值成正比例关系，即凹槽2271的深度越深，第一公共电极层2253与第二公共电极层229形成的存储电容的容量值越大，使得液晶显示面板的存储电容的容量值越大。
在步骤S106中，还包括在树脂层227上设置有露出第二金属层225的过孔2272的步骤。其中，过孔2272与TFT基板的非透光区域对应设置，
步骤S107：在树脂层227上形成ITO层(228、229)，其中，ITO层(228、229)包括第二公共电极层229。
在本实施例中，设置在TFT基板的透光区域A-A的第二公共电极层226设置在凹槽2271上。应理解，第二公共电极层229是部分设置在TFT基板的透光区域的，第二公共电极层229还有部分是设置在TFT基板的非透光区域的。另外，ITO层(228、229)还包括像素电极层228，像素电极层228设置在TFT基板的非透光区域，像素电极层228设置在过孔2272上。
本实施例通过第二金属层225形成新的第一公共电极层2253，与原ITO层的第二公共电极层229形成新的存储电容，相比现有技术，本发明能够增加液晶显示面板的存储电容的容量。进一步地，本实施例通过在树脂层227所对应的透光区域A-A上挖孔形成凹槽2271，且第二公共电极层229设置在凹槽2271上，从而降低了第一公共电极层2253与第二公共电极层229之间的距离，进一步加大了存储电容的容量，同时树脂层227所对应的非透光区域的厚度保持不变，不影响液晶显示面板的寄生电容的容量。
综上，本发明的TFT基板的制造方法包括：在衬底层形成第一金属层；在第一金属层上形成第一绝缘层；在第一绝缘层上形成半导体活性层；形成第二金属层，其中，第二金属层包括设置在半导体活性层上的漏极和源极以及设置在第一绝缘层上的第一公共电极层；在第二金属层上形成第二绝缘层；在第二绝缘层上形成树脂层；在树脂层上形成ITO层，其中，ITO层包括第二公共电极层；其中，第一公共电极层和第二公共电极层分别与TFT基板的透光区域对应设置。通过上述方式，本发明能够增大存储电容的容量，避免因增加存储电容的容量而造成的开口率下降的问题发生，同时能够使得液晶显示面板的穿透率变大，有效提升液晶显示面板的画面品质。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (7)

1.一种TFT基板的制造方法，其特征在于，所述方法包括：
在衬底层形成第一金属层；
在所述第一金属层上形成第一绝缘层；
在所述第一绝缘层上形成半导体活性层；
形成第二金属层，其中，所述第二金属层包括设置在所述半导体活性层上的漏极和源极以及设置在所述第一绝缘层上的第一公共电极层；
在所述第二金属层上形成第二绝缘层；
在所述第二绝缘层上形成树脂层；
在所述树脂层上形成ITO层，其中，所述ITO层包括第二公共电极层；
其中，所述第一公共电极层和所述第二公共电极层分别与所述TFT基板的透光区域对应设置；
其中，在所述树脂层上设置有露出所述第二绝缘层的凹槽，其中，所述凹槽与所述TFT基板的透光区域对应设置；
其中，设置在所述TFT基板的透光区域的所述第二公共电极层设置在所述凹槽上。
2.根据权利要求1所述的方法，其特征在于，所述ITO层还包括像素电极层，所述像素电极层设置在所述TFT基板的非透光区域。
3.根据权利要求2所述的方法，其特征在于，所述方法还包括：
在所述树脂层上设置有露出所述第二金属层的过孔，其中，所述过孔与所述TFT基板的非透光区域对应设置，所述像素电极层设置在所述过孔上。
4.一种TFT基板，其特征在于，所述TFT基板包括衬底层、设置在所述衬底层上的第一金属层、设置在所述第一金属层上的第一绝缘层、设置在所述第一绝缘层上的半导体活性层、第二金属层、设置在所述第二金属层上的第二绝缘层、设置在所述第二绝缘层上的树脂层以及设置在所述树脂层上的ITO层，其中，所述第二金属层包括设置在所述半导体活性层上的漏极和源极以及设置在所述第一绝缘层上的第一公共电极层，所述ITO层包括第二公共电极层，所述第一公共电极层和所述第二公共电极层分别与所述TFT基板的透光区域对应设置；
其中，所述树脂层设置有露出所述第二绝缘层的凹槽，所述凹槽与所述TFT基板的透光区域对应设置，设置在所述TFT基板的透光区域的所述第二公共电极层设置在所述凹槽上。
5.根据权利要求4所述的TFT基板，其特征在于，所述ITO层还包括像素电极层，所述像素电极层设置在所述TFT基板的非透光区域。
6.根据权利要求5所述的TFT基板，其特征在于，所述树脂层上设置有露出所述第二金属层的过孔，其中，所述过孔与所述TFT基板的非透光区域对应设置，所述像素电极层设置在所述过孔上。
7.一种液晶显示面板，其特征在于，所述液晶显示面板包括如权利要求4-6任一项所述的TFT基板。
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