JP5401571B2 - 電界効果型トランジスタの製造方法 - Google Patents

電界効果型トランジスタの製造方法 Download PDF

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Publication number
JP5401571B2
JP5401571B2 JP2012058163A JP2012058163A JP5401571B2 JP 5401571 B2 JP5401571 B2 JP 5401571B2 JP 2012058163 A JP2012058163 A JP 2012058163A JP 2012058163 A JP2012058163 A JP 2012058163A JP 5401571 B2 JP5401571 B2 JP 5401571B2
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film
substrate
amorphous oxide
amorphous
oxygen
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Japanese (ja)
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JP2012124532A (ja
JP2012124532A5 (OSRAM
Inventor
久人 薮田
政史 佐野
達哉 岩崎
秀雄 細野
利夫 神谷
研二 野村
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Canon Inc
Tokyo Institute of Technology NUC
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Canon Inc
Tokyo Institute of Technology NUC
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Publication of JP2012124532A5 publication Critical patent/JP2012124532A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2012058163A 2004-11-10 2012-03-15 電界効果型トランジスタの製造方法 Expired - Lifetime JP5401571B2 (ja)

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JP2004326686 2004-11-10
JP2004326686 2004-11-10
JP2012058163A JP5401571B2 (ja) 2004-11-10 2012-03-15 電界効果型トランジスタの製造方法

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JP2012124532A JP2012124532A (ja) 2012-06-28
JP2012124532A5 JP2012124532A5 (OSRAM) 2012-11-29
JP5401571B2 true JP5401571B2 (ja) 2014-01-29

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JP2012058087A Expired - Lifetime JP5451801B2 (ja) 2004-11-10 2012-03-15 電界効果型トランジスタの製造方法
JP2012058252A Expired - Lifetime JP5401572B2 (ja) 2004-11-10 2012-03-15 電界効果型トランジスタの製造方法
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JP2012058252A Expired - Lifetime JP5401572B2 (ja) 2004-11-10 2012-03-15 電界効果型トランジスタの製造方法
JP2012058253A Expired - Lifetime JP5401573B2 (ja) 2004-11-10 2012-03-15 電界効果型トランジスタの製造方法

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US (2) US7829444B2 (OSRAM)
JP (4) JP5401571B2 (OSRAM)

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