CN101128940A - 具有由氧化锌组成的沟道的薄膜晶体管及其制造方法 - Google Patents
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Abstract
一种薄膜晶体管具有包含氧化锌的半导体薄膜(15)、形成在半导体薄膜(15)的整个上表面上的保护膜(16)；形成在保护膜(16)上的栅极绝缘膜(17)；在半导体薄膜(15)之上形成在栅极绝缘膜(17)上的栅极(18)；以及形成在半导体薄膜(15)之下以与半导体薄膜(15)电连接的源极(11)和漏极(12)。
Description
技术领域
本发明涉及一种薄膜晶体管，具体地涉及一种适用于其半导体层是氧化物半导体层的薄膜晶体管。
背景技术
正如待审日本专利申请KOKAI公开No.H5-67786中描述的，用作有效矩阵液晶显示装置的开关元件的薄膜晶体管通常采用反向交错排列的结构。这种结构的薄膜晶体管被构造成使得在绝缘基底上形成栅极，在栅极和绝缘基底的上表面上形成栅极绝缘膜，在栅极上的栅极绝缘膜的上表面上形成由本征非晶硅制成的半导体薄膜，在半导体薄膜的上表面的中部形成沟道保护膜，在沟道保护膜的上表面两侧以及在沟道保护膜两侧的半导体薄膜上形成由n型非晶硅制成的电阻接触层，并且在相应电阻接触层的上表面上形成源极和漏极。
近来，有一种思想是采用氧化锌(ZnO)代替非晶硅，因为可以从氧化锌获得比非晶硅更高的迁移率。在通过CVD(化学气相沉积)形成氧化锌薄膜的情况下，薄膜属性在初始状态下不稳定。因此，如果采用反向交错排列的结构，则处于这种不利的初始状态下的氧化锌膜被布置成与栅极相对，也就是处于不利状态的氧化锌膜形成沟道区，从而使薄膜晶体管更难获得良好的性能。目前考虑的解决这一问题的方案是制造顶栅型薄膜晶体管，其中氧化锌膜的上表面作为沟道区。可以想到这种采用氧化锌的顶栅型薄膜晶体管的制造方法例如是在栅极绝缘膜上形成由本征氧化锌制成的半导体薄膜形成层，在半导体薄膜形成层的上表面上形成由氮化硅制成的带图案的保护膜，在包括沟道保护膜的半导体薄膜形成层的上表面上形成由n型氧化锌制成的电阻接触层形成层，接着对电阻接触层形成层和半导体薄膜形成层进行构图以在器件区域上形成电阻接触层和半导体薄膜，并通过在每个带图案的电阻接触层的上表面上进行构图来形成源极和漏极。
发明内容
然而，根据上述的制造方法，已经发现由于氧化锌很容易溶于酸和碱并具有极低的耐蚀刻性，因此在器件区域上形成的由氧化锌制成的半导体薄膜和电阻接触层在之后的制造过程中承受相对较大的侧面蚀刻，从而降低了加工精度。
因此，本发明的目的是提供一种以精密加工精度形成的薄膜晶体管及其制造方法。
为了实现以上目的，根据本发明的薄膜晶体管包括：包含氧化锌的半导体薄膜15；形成在半导体薄膜15的整个上表面上的保护膜16；形成在保护膜16上的栅极绝缘膜17；在半导体薄膜15之上形成在栅极绝缘膜17上的栅极18；以及形成在半导体薄膜15之下以与半导体薄膜15电连接的源极11和漏极12。
根据本发明的一种薄膜晶体管的制造方法包括：连续形成包含氧化锌的半导体薄膜形成膜15a和保护膜形成膜16a；通过对保护膜形成膜16a进行蚀刻而形成保护膜16；通过采用保护膜16作为掩模对半导体薄膜形成膜15a进行蚀刻而形成与保护膜16具有基本上相同的平面形状的半导体薄膜15；形成覆盖保护膜16的栅极绝缘膜17；以及在栅极绝缘膜17上形成栅极18。
附图说明
通过阅读以下详细描述和附图将会更清楚地了解到本发明的这些目的和其它目的以及优点，图中：
图1是本发明第一实施例具有薄膜晶体管的液晶显示装置的主要部件的透视平面图；
图2A是图1所示部件的放大透视平面图，图2B是沿图2A中的线IIB-IIB截取的横截面图；
图3A是表示比用于制造图2A和2B所示薄膜晶体管的部件的过程更早的步骤的透视平面图，图3B是沿图3A中的线IIIB-IIIB截取的横截面图；
图4A是图3A和3B之后的步骤的透视平面图，图4B是沿图4A中的线IVB-IVB截取的横截面图；
图5A是图4A和4B之后的步骤的透视平面图，图5B是沿图5A中的线VB-VB截取的横截面图；
图6A是图5A和5B之后的步骤的透视平面图，图6B是沿图6A中的线VIB-VIB截取的横截面图；
图7A是图6A和6B之后的步骤的透视平面图，图7B是沿图7A中的线VIIB-VIIB截取的横截面图；
图8A是图7A和7B之后的步骤的透视平面图，图8B是沿图8A中的线VIIIB-VIIIB截取的横截面图；
图9A是图8A和8B之后的步骤的透视平面图，图9B是沿图9A中的线IXB-IXB截取的横截面图；
图10A是本发明第二实施例具有薄膜晶体管的液晶显示装置的主要部件的透视平面图，图10B是沿图10A中的线XB-XB截取的横截面图；
图11A是表示比用于制造图10A和10B所示薄膜晶体管的部件的过程更早的步骤的透视平面图，图11B是沿图11A中的线XIB-XIB截取的横截面图；
图12A是图11A和11B之后的步骤的透视平面图，图12B是沿图12A中的线XIIB-XIIB截取的横截面图；
图13A是图12A和12B之后的步骤的透视平面图，图13B是沿图13A中的线XIIIB-XIIIB截取的横截面图；
图14A是图13A和13B之后的步骤的透视平面图，图14B是沿图14A中的线XIVB-XIVB截取的横截面图；
图15A是图14A和14B之后的步骤的透视平面图，图15B是沿图15A中的线XVB-XVB截取的横截面图；
图16A是本发明第三实施例具有薄膜晶体管的液晶显示装置的主要部件的透视平面图，图16B是沿图16A中的线XVIB-XVIB截取的横截面图。
具体实施方式
(第一实施例)
图1表示根据本发明第一实施例包括薄膜晶体管的液晶显示装置的主要部件的透视平面图。图2A是图1所示部件的放大透视平面图，图2B是沿图2A中的线IIB-IIB截取的横截面图。液晶显示装置具有玻璃基底1。
首先参照图1给出说明。以矩阵形式在玻璃基底1的上表面上形成扫描线2和数据线3。在扫描线2和数据线3环绕的区域上形成像素电极4，以通过薄膜晶体管5与扫描线2和数据线3相连。形成平行于扫描线2和数据线3的晶格状辅助电容器电极6。注意到为了使平面图结构更清楚，在包括图1的全部图中在像素电极4的边缘采用由倾斜短实线构成的阴影线。
在图1中，像素电极4的下左角部被剖开，并且薄膜晶体管5的主要部件布置在剖开区域。像素电极4的所有周围边缘与绕其形成的具有晶格形状的辅助电容器电极6重叠。具有晶格形状的辅助电容器电极6包括由包含与数据线3重叠的区域的部分构成的第一辅助电容器电极部分6a、由包含与扫描线2重叠的区域的部分构成的第二辅助电容器电极部分6b、以及由包含与薄膜晶体管5的主要部件重叠的区域的部分构成的第三辅助电容器电极部分6c。在这种情况下，如后文所述，在与扫描线2不同的层上形成辅助电容器电极6，具体地，辅助电容器电极6的第一辅助电容器电极部分6a被形成为在其厚度方向上也就是在垂直于图1纸面方向上分别通过绝缘膜与数据线3和像素电极4绝缘。
第一辅助电容器电极部分6a的宽度在一定程度上比数据线3的宽度更大。这样使第一辅助电容器电极部分6a能够可靠封盖数据线3，从而即使在与数据线3延伸方向垂直的方向上发生位置移动，也不会使数据线3直接面对像素电极4。第一辅助电容器电极部分6a布置在几乎所有布置数据线3的区域上。这样使得即使在第一辅助电容器电极部分6a在平行于数据线3的方向上相对于像素电极4位置移动的情况下第一辅助电容器电极部分6a也能与像素电极4的左和右边缘可靠重叠，从而可以可靠地防止因在该方向上的位置错位而产生辅助电容的波动。
第二辅助电容器电极部分6b的宽度在一定程度上比扫描线2的宽度更大。这样即使在与扫描线2延伸方向垂直的方向上发生位置移动也可以使第二辅助电容器电极部分6b可靠地封盖扫描线2。第二辅助电容器电极部分6b布置在几乎所有布置扫描线2的区域。这样使得即使第二辅助电容器电极部分6b在平行于扫描线2的方向上相对于像素电极4位置移动，第二辅助电容器电极部分6b也能与像素电极4的上和下边缘可靠重叠，从而能够可靠防止因在该方向的位置移动而产生的辅助电容波动。
接着，将参照图2A和图2B对本发明液晶显示装置的具体结构进行说明。在玻璃基底1的上表面上的预定位置处形成由铝、铬、ITO等制成的源极11、漏极12以及与漏极12相连的数据线3。在源极11的靠近漏极12一侧的上表面上形成一侧上的由n型氧化锌制成的电阻接触层13。在包括靠近源极11的一侧的一部分数据线3的漏极12的上表面上形成另一侧上的由n型氧化锌制成的电阻接触层14。电阻接触层13和14的相互面对的端面13a和14a与源极11和漏极12的相互面对的端面11a和12a具有相同的形状。在此，氧化锌不仅是ZnO，而是在ZnO之外还包括Mg、Cd等的所有ZnO基材料。
在整个两个电阻接触层13和14上以及在露于接触层13和14之间的玻璃基底1的上表面上形成由本征氧化锌制成的半导体薄膜15。在半导体薄膜15的整个表面上形成由氮化硅制成的保护膜16。半导体薄膜15和保护膜16具有相同的平面形状，如图2A所示。除了相互面对的端面13a和14a之外，两个电阻接触层13和14的周围端面与半导体薄膜15和保护膜16的周围端面具有相同的形状。两个电阻接触层13和14的端面13a和14a之间的间隔是沟道长度L，并且电阻接触层13和14在垂直于沟道长度L的方向上的尺寸是沟道宽度W。
在包括保护膜16、源极11和数据线3的玻璃基底1的上表面上形成由氮化硅制成的绝缘膜17。在绝缘膜17的上表面上的预定位置处形成由铝、铬、ITO等制成的栅极18以及与栅极18相连的扫描线2。
源极11、漏极12、电阻接触层13和14、半导体薄膜15、保护膜16、绝缘膜17以及栅极18形成顶栅结构的薄膜晶体管5。在这种情况下，通过保护膜16和绝缘膜17形成薄膜晶体管5的栅极绝缘膜。
在包括栅极18和扫描线2的绝缘膜17的上表面上形成由氮化硅制成的上绝缘膜19。在上绝缘膜19的上表面上的预定位置处形成由阻光金属例如铝、铬等制成的具有大多晶格形状的辅助电容器电极6。在包括辅助电容器电极6的上绝缘膜19的上表面上形成由氮化硅制成的外套膜20。在外套膜20、上绝缘膜19以及绝缘膜17与源极11上预定位置相对应的部分上形成接触孔21。在外套膜20的上表面上的预定位置形成由透明的导电材料例如ITO等制成的像素电极4，以通过接触孔21与源极11相连。
接着，将对本发明液晶显示装置中薄膜晶体管5周围区域的制造方法的实例进行说明。首先，如图3A和图3B所示，通过对溅射形成的铝、铬、ITO等制成的金属薄膜进行光刻构图而在玻璃基底1的上表面上的相应预定位置处形成源极11、漏极12以及与漏极12相连的数据线。
随后，通过面对靶溅射法在包括源极11、漏极12以及数据线3的玻璃基底1的上表面上形成由n型氧化锌制成的第一电阻接触层形成层31。在这种情况下，通过采用氧气并采用铟和锌作为靶或者镓和锌作为靶的反应溅射法形成第一电阻接触层形成层31。备选地，可以采用氧化铟锌(InZnO)或者氧化镓锌(GaZnO)作为靶。
接着，通过包括后部曝光(从玻璃基底1的下表面曝光)的光刻法在第一电阻接触层形成层31的上表面上的相应预定位置处形成抗蚀图案32a和32b。在这种情况下，由于后部曝光，在源极11上形成一个抗蚀图案32a，并且在漏极12和数据线3上形成另一抗蚀图案32b。
接着，通过采用抗蚀图案32a和32b作为掩模对第一电阻接触层形成层31进行蚀刻以在抗蚀图案32a和32b之下形成第二电阻接触层形成层31a和31b，如图4A和图4B所示。在这种情况下，采用碱性水溶液作为对由n型氧化锌制成的第一电阻接触层形成层31的蚀刻液体。例如水溶液包含小于30％重量百分比的氢氧化钠(NaOH)，优选包含2-10％重量百分比的氢氧化钠。蚀刻液体的温度是5-40℃，优选为室温(22-23℃)。
在采用包含5％重量百分比的氢氧化钠(NaOH)的水溶液(其温度为室温(22-23℃))的情况下，蚀刻速率大约为80纳米/分钟。当考虑蚀刻过程的可控制性时，太高的蚀刻速率使得因例如薄膜厚度、密度的变化等因素而难以控制蚀刻的结束，同时不用说，太低的蚀刻速率降低了生产率。因此，通常说蚀刻速率优选地应该为100-20纳米/分钟。因此，可以说水溶液包含5％重量百分比的氢氧化钠(NaOH)、获得大约80纳米/分钟的蚀刻速率在符合要求的范围内。
然而，可以提高钠的浓度以进一步改善制造效率。在采用具有高蚀刻速率的蚀刻液体例如磷酸水溶液的情况下，为了蚀刻过程的可控制性需要使液体具有大约0.05％的非常低的浓度。然而，这种低浓度液体在被使用的同时快速变质，从而引起相同的过程控制困难的问题。因此，如果采用氢氧化钠水溶液，水溶液可以小于30％重量百分比，优选为大约2-10％重量百分比，从而在这一方面发挥其用途。在通过湿蚀刻在第一电阻接触层形成层31上产生的侧面蚀刻量影响电阻接触层13和14的端面13a和14a之间间隔也就是沟道长度L的情况下，采用干蚀刻。
接着，通过采用抗蚀分离液体分离抗蚀图案32a和32b。在此，发明人已经确认通过采用作为抗蚀分离液体的既不表现为酸性也不表现为碱性的液体(不包括任何电解质)例如单一有机溶剂(例如二甲亚砜(DMSO))均匀细致地实现抗蚀分离。在这种情况下，抗蚀分离液体对由n型氧化锌制成的第二电阻接触层形成层31a和31b进行蚀刻，但伴随的侧面蚀刻的量不是那么大，不会达到影响沟道长度L的程度。此外，抗蚀蚀刻液体还蚀刻出第二电阻接触层形成层31a和31b的上表面，但不会有任何麻烦，因为电阻接触层的膜的薄化不会影响薄膜晶体管的性能。可以采用ITO代替n型氧化锌作为电阻接触层。
接着，在包括第二电阻接触层形成层31a和31b的玻璃1的上表面上用等离子体CVD法连续形成由本征氧化锌制成的半导体薄膜形成膜15a以及由氮化硅制成的保护膜形成膜16a，如图5A和5B所示。接着，在保护膜形成膜16a的上表面上的预定位置处通过光刻形成用于构成器件区域的抗蚀图案33。
接着，通过采用抗蚀图像33作为掩模对保护膜形成膜16a进行蚀刻以在抗蚀图像33之下形成保护膜16，如图6A和图6B所示。在这种情况下，半导体薄膜形成膜15a的表面得到曝光，除了在抗蚀图案33下方之外。因此采用六氟化硫(SF6)的反应等离子体蚀刻(干蚀刻)优选作为由氮化硅制成的保护膜形成膜16a的蚀刻方法，因为该蚀刻方法具有较高的蚀刻速率，并且因为需要留出最少被腐蚀的由本征氧化锌制成的半导体薄膜形成膜15a。
接着，通过采用抗蚀分离液体分离抗蚀图案33。在这种情况下，半导体薄膜形成膜15a除了保护膜16下方之外的表面暴露在抗蚀分离液体下，但不会产生任何麻烦，因为暴露的表面不是器件区域。也就是说，如果沟道区域承受侧面蚀刻或者沟道区域的上表面承受与上述形成电阻接触层不同的蚀刻，则薄膜晶体管的属性会受到极大影响，但保护膜16下方的半导体薄膜形成膜15a受到保护膜16的保护。在这种情况下，可以采用既不表现为酸性也不表现为碱性(不包括任何电解质)的抗蚀分离液体例如单一有机溶剂(例如，二甲亚砜(DMSO))。
接着，通过采用保护膜16作为掩模对半导体薄膜形成膜15a以及第二电阻接触层形成层31a和31b进行连续蚀刻，以在保护膜16之下形成半导体薄膜15，并在半导体薄膜15之下形成电阻接触层13和14，如图7A和图7B所示。
在这种情况下，由于半导体薄膜形成膜15a和第二电阻接触层形成层31a和31b由本征氧化锌和n型氧化锌制成，因此在采用上述氢氧化钠水溶液作为蚀刻液体的情况下具有良好的过程可控制性。在此，两个电阻接触层13和14之间的间隔是沟道长度L，并且电阻接触层13和14在垂直于沟道长度L的方向上的尺寸是沟道宽度W。
在以上描述中，在抗蚀图案33分离之后，通过采用保护膜16作为掩模对半导体薄膜形成膜15a以及第二电阻接触层形成层31a和31b进行蚀刻。然而，也可以在对半导体薄膜形成膜15a以及第二电阻接触层形成层31a和31b进行蚀刻之后使抗蚀图案33分离。
接着，在包括保护膜16、源极11和数据线3的玻璃基底1的上表面上通过等离子体CVD法形成由氮化硅制成的绝缘膜17，如图8A和图8B所示。接着，通过对溅射形成的铬、铝、ITO等制成的金属薄膜进行光刻构图而在绝缘膜17的上表面上的预定位置处形成栅极18以及与栅极18相连的扫描线2。
接着，在包括栅极18以及扫描线2的绝缘膜17的上表面上通过等离子体CVD法形成由氮化硅制成的上绝缘膜19，如图9A和图9B所示。接着，通过对溅射形成的铬、铝等制成的阻光金属进行光刻构图而在上绝缘膜19的上表面上的预定位置处形成辅助电容器电极6。
接着，在包括辅助电容器电极6的上绝缘膜19的上表面上通过等离子体CVD法形成由氮化硅制成的外套膜20，如图2A和图2B所示。接着，通过依次穿过外套膜20、上绝缘膜19以及绝缘层17在与源极11上的预定位置相对应的部分进行光刻而形成接触孔21。接着，通过对溅射形成的由透明导电材料例如ITO制成的像素电极进行光刻构图而在外套膜20的上表面上的预定位置处形成像素电极4，以通过接触孔21与源极11相连。因此，获得图2A和图2B所示的液晶显示装置。
如上所述，根据这种制造方法，用于在半导体薄膜形成膜15a的上表面上形成保护膜16的抗蚀图案33得到分离，同时半导体薄膜形成膜15a的一部分受到保护膜16的保护，而后通过采用保护膜16作为掩模而对半导体薄膜形成膜15a和第二电阻接触层形成层31a和31b进行连续蚀刻，由此在保护膜16之下形成半导体薄膜15，并在半导体薄膜15之下的两侧形成电阻接触层13和14，保护膜16在半导体薄膜15的整个上表面上保持未受到触动。因而，可以提高加工精度。
此外，在通过上述制造方法获得的薄膜晶体管5中，由于两个电阻接触层13和14之间的间隔是沟道长度L并且电阻接触层13和14在垂直于沟道长度L的方向上的尺寸是沟道宽度W，因此该尺寸可以被形成为等于或近似于具有底栅结构的沟道蚀刻型薄膜晶体管的尺寸，从而使晶体管小型化。
此外，在通过上述制造方法获得的液晶显示装置中，由于在像素电极4与扫描线2和数据线3之间形成具有比扫描线2和数据线3更大的宽度的第一和第二辅助电容器电极部分6a和6b，因此可以通过这些第一和第二辅助电容器电极部分6a和6b防止在像素电极4与扫描线2和数据线3之间发生耦合电容，由此确保不会发生任何垂直串音干扰并提高显示性能。
在更早的制造步骤中，可以设计成在玻璃基底1的上表面上连续形成源极/漏极形成膜和第一电阻接触层形成层31，在第一电阻接触层形成层31的上表面上形成例如图3A和3B所示的抗蚀图案32a和32b，通过采用抗蚀图案32a和32b作为掩模对第一电阻接触层形成层31和源极/漏极形成膜进行连续蚀刻，由此在抗蚀图案32a和32b之下形成第二电阻接触层形成层31a和31b，并且在第二电阻接触层形成层32a和32b之下形成源极11和漏极12，例如图4A和4B所示。
(第二实施例)
图10A表示根据本发明第二实施例包括薄膜晶体管的液晶显示装置的主要部件的透视平面图。图10B表示沿图10A中的线XB-XB截取的横截面图。该液晶显示装置与图2A和图2B所示的液晶显示装置之间的差别在于在靠近漏极12的一侧的源极11的上表面上和玻璃基底1的相邻上表面上的预定位置处形成一个电阻接触层13，并且在靠近源极11的一侧的包括一部分数据线3的漏极12的上表面和玻璃基底1的相邻上表面上的预定位置处形成另一电阻接触层14。也就是说，分别在源极11和漏极12的上表面上形成电阻接触层13和14，以使它们的面对的端面13a和14a从源极11和漏极12的面对的端面11a和12a突出。
接着，对本实施例的液晶显示装置中薄膜晶体管5周围区域的制造方法的一种实例进行说明。首先，通过对溅射形成的铝、铬、ITO等制成的金属进行光刻构图而在玻璃基底1的上表面上的相应预定位置处形成源极11、漏极12以及与漏极12相连的数据线3，如图11A和11B所示。
接着，通过面对靶溅射法在包括源极11、漏极12以及数据线3的玻璃基底1的上表面上形成由n型氧化锌制成的第一电阻接触层形成层31。接着，通过光刻在第一电阻接触层形成层31的上表面上的相应预定位置处形成抗蚀图案32a和32b。
在这种情况下，一个抗蚀图案32a被形成为在一定程度上比源极11更大以完全覆盖源极11。另一抗蚀图案32b被形成为在一定程度上比包括一部分数据线3的漏极12更大以完全覆盖包括一部分数据线3的漏极12。
由于(按如上参照图10A和图10B的说明)在源极11的端面11a与一个电阻接触层13的端面13a之间的间隔是用于保持这些端面11a和13a处于所需位置关系的边缘并且通常需要为1-4μm，所以如上所述形成抗蚀图案32a和32b，尽管如此，该值也可以根据加工精度改变。
接着，通过采用抗蚀图案32a和32b作为掩模而对第一电阻接触层形成层31进行蚀刻，在抗蚀图案32a和32b之下形成第二电阻接触层形成层31a和31b，如图12A和图12B所示。在这种情况下，由于第一电阻接触层形成层31由n型氧化锌制成，在采用上述氢氧化钠作为蚀刻液体的情况下可以具有良好的加工可控制性。
接着，通过采用抗蚀分离液体使抗蚀图案32a和32b分离。在这种情况下，第二电阻接触层形成层31a和31b的表面露出。因此，可以采用既不表现为酸性也不表现为碱性(不包括任何电解质)的抗蚀分离液体，例如单一有机溶剂(例如二甲亚砜(DMSO))。
接着，如图13A和图13B所示，在包括第二电阻接触层形成层31a和31b以及数据线3的玻璃基底1的上表面上通过等离子体CVD法连续形成由本征氧化锌制成的半导体薄膜形成膜15a和由氮化硅制成的保护膜形成膜16a。接着，通过在保护膜形成膜16a的上表面上的预定位置处进行光刻而形成用于形成器件区域的抗蚀图案33。
接着，通过采用抗蚀图案33作为掩模对保护膜形成膜16a进行蚀刻，以在抗蚀图案33之下形成保护膜16，如图14A和14B所示。在这种情况下，半导体薄膜形成膜15a除了抗蚀图案33之下以外的表面都露出。因此，优选采用六氟化硫(SF6)的反应等离子体蚀刻(干蚀刻)作为形成由氮化硅制成的保护膜16的蚀刻方法。
接着，通过采用抗蚀分离液体使抗蚀图案33分离。在这种情况下，半导体薄膜形成膜15a除了保护膜16之下以外的表面暴露在抗蚀分离液体中，但不会产生任何麻烦，因为暴露的表面不是器件区域。也就是说，保护膜16之下的半导体薄膜形成膜15a受到保护膜16的保护。在这种情况下，可以采用既不表现为酸性也不表现为碱性(不包括任何电解质)的抗蚀分离液体，例如单一有机溶剂(例如二甲亚砜(DMSO))。
接着，通过采用保护膜 16 作为掩模对半导体薄膜形成膜15a和第二电阻接触层形成层31a和31b进行连续蚀刻，以在保护膜16之下形成半导体薄膜15，并在半导体薄膜15之下的两侧形成电阻接触层13和14，如图15A和15B所示。
在这种情况下，由于半导体薄膜形成膜15a和第二电阻接触层形成层31a和31b由本征氧化锌和n型氧化锌制成，因此在采用上述氢氧化钠水溶液作为蚀刻液体的情况下可以具有良好的加工可控制性。在此，两个电阻接触层13和14的端面13a和14a之间的间隔是沟道长度L，并且电阻接触层在垂直于沟道长度L的方向上的尺寸是沟道宽度W。之后，执行与第一实施例类似的制造步骤以获得图10A和图10B所示的液晶显示装置。
(第三实施例)
图16A表示根据本发明第三实施例包括薄膜晶体管的液晶显示装置的主要部件的透视平面图。图16B表示沿图16A中的线XVIB-XVIB截取的横截面图。该实施例的液晶显示装置与图2A和图2B所示的液晶显示装置的差别在于不形成任何上绝缘膜19，而是在绝缘膜17的上表面上的相应预定位置处形成由阻光金属例如铝、铬等制成的栅极18、与栅极18相连的扫描线2以及辅助电容器电极6，并且栅极18、扫描线2以及辅助电容器电极6用外套膜(绝缘膜)20a覆盖。
在这种情况下，辅助电容器电极6包括具有与一部分数据线3重叠的区域的第一辅助电容器电极部分6d、在扫描线2附近布置成平行于扫描线2的第二辅助电容器电极部分6e、以及沿像素电极4的预定边缘布置的第三辅助电容器电极部分6f。为了清楚显示辅助电容器电极16的平面形状，通过比其它部件更粗的实线画出辅助电容器电极16的边缘。
根据该实施例液晶显示装置的薄膜晶体管5周围区域的制造方法，可以同时在绝缘膜17的上表面上的相应预定位置处形成由阻光金属例如铝、铬等制成的栅极18、与栅极18相连的扫描线2、以及辅助电容器电极6。因此，与图2A和图2B所示实例相比，可以省略形成上绝缘膜的步骤、形成辅助电容器电极形成膜的步骤、形成用于构成辅助电容器电极的抗蚀图案的步骤、通过采用抗蚀图案作为掩模对辅助电容器电极形成膜进行蚀刻而形成辅助电容器电极的步骤、以及分离抗蚀图案的步骤，从而能够减少制造步骤的数量。
(其它实施例)
不仅可以通过等离子体CVD，而且可以通过溅射、汽相沉积、铸造、电镀等形成半导体薄膜形成膜15a和电阻接触层形成层31。不仅可以由n型氧化锌，而且可以由p型氧化锌以及其导电性通过氧空穴来改变的氧化锌来制成电阻接触层13和14。
在玻璃基底1与源极11和漏极12之间形成底部绝缘膜。在底部绝缘膜由例如离子阻挡材料制成的情况下，可以降低从玻璃基底1的杂质扩散并抑制玻璃基底1与氧化锌膜的反应。在选择具有与氧化锌类似晶格常数和晶体结构的材料作为底部绝缘膜材料的情况下，可以提高氧化锌膜的结晶度。
根据本发明，可以通过在由本征氧化锌制成的半导体薄膜的整个上表面上形成保护膜，也就是说，通过以下手段，即，当对用于在半导体薄膜形成膜的上表面上形成保护膜的抗蚀图案进行分离时，用保护膜保护位于保护膜之下由本征氧化锌制成的半导体薄膜形成膜，随后通过采用保护膜作为掩模对半导体薄膜形成膜进行蚀刻而在保护膜之下形成半导体薄膜，并使保护膜保留在半导体薄膜的整个上表面上，来提高加工精度
在不脱离本发明广义精神和范围的前提下可以对本发明做出多种实施例和改变。上述实施例被用于表示本发明，而不是限制本发明的范围。本发明的范围通过附加权利要求而不是实施例示出。在本发明权利要求等效方式内以及权利要求内做出的多种修改被认为处于本发明的范围内。
Claims (30)
1.一种薄膜晶体管，包括：
包含氧化锌的半导体薄膜(15)；形成在半导体薄膜(15)的整个上表面上的保护膜(16)；形成在保护膜(16)上的栅极绝缘膜(17)；在半导体薄膜(15)之上形成在栅极绝缘膜(17)上的栅极(18)；以及形成在半导体薄膜(15)之下以与半导体薄膜(15)电连接的源极(11)和漏极(12)。
2.如权利要求1所述的薄膜晶体管，
其特征在于，分别在半导体薄膜(15)之下的源极(11)和漏极(12)的上表面上形成有由n型氧化锌制成的电阻接触层(13，14)，从而使它们的相互面对的端面被形成为与源极(11)和漏极(12)的相互面对的端面具有相同的形状。
3.如权利要求1所述的薄膜晶体管，
其特征在于，分别在半导体薄膜(15)之下的源极(11)和漏极(12)的上表面上形成有由n型氧化锌制成的电阻接触层(13，14)，从而使它们的相互面对的端面从源极(11)和漏极(12)的相互面对的端面突出。
4.如权利要求1所述的薄膜晶体管，其特征在于，包括覆盖栅极(18)的外套膜(20)。
5.如权利要求4所述的薄膜晶体管，其特征在于，在外套膜(20)的上表面上形成有像素电极(4)以与源极(11)相连。
6.如权利要求5所述的薄膜晶体管，其特征在于，在栅极绝缘膜(17)与外套膜(20，20a)之间形成有辅助电容器电极(6)。
7.如权利要求6所述的薄膜晶体管，
其特征在于，在与漏极(12)相同的层上形成有与漏极(12)相连的数据线(3)，辅助电容器电极(6)包括具有通过栅极绝缘膜(17)与数据线(3)重叠的区域的部分(6a)，并且辅助电容器电极(6)的包括与数据线(3)重叠的区域的部分(6a)的宽度比数据线(3)的宽度更大。
8.如权利要求7所述的薄膜晶体管，
其特征在于，辅助电容器电极(6)与像素电极(4)的所有周边重叠。
9.如权利要求8所述的薄膜晶体管，其特征在于，还包括覆盖栅极(18)的绝缘膜(19，20a)，
在绝缘膜(19，20a)的上表面上形成有辅助电容器电极(6)。
10.如权利要求9所述的薄膜晶体管，
其特征在于，在与栅极(18)相同的层上形成有与栅极(18)相连的扫描线(2)，辅助电容器电极(6)包括通过绝缘膜(20a)与扫描线(2)重叠的部分，并且辅助电容器电极(6)的与扫描线(2)重叠的部分的宽度比扫描线(2)的宽度更大。
11.如权利要求9所述的薄膜晶体管，
其特征在于，在栅极绝缘膜(17)的上表面上形成有辅助电容器电极(6)。
12.一种薄膜晶体管的制造方法，包括：
连续形成包含氧化锌的半导体薄膜形成膜(15a)和保护膜形成膜(16a)；
通过对保护膜形成膜(16a)进行蚀刻而形成保护膜(16)；
通过采用保护膜(16)作为掩模对半导体薄膜形成膜(15a)进行蚀刻而形成与保护膜(16)具有基本上相同的平面形状的半导体薄膜(15)；
形成覆盖保护膜(16)的栅极绝缘膜(17)；以及
在栅极绝缘膜(17)上形成栅极(18)。
13.如权利要求12所述的薄膜晶体管的制造方法，
其特征在于，对保护膜形成膜(16a)的蚀刻是反应等离子体蚀刻。
14.如权利要求13所述的薄膜晶体管的制造方法，
其特征在于，通过采用包含六氟化硫的反应气体执行反应等离子体蚀刻。
15.如权利要求12所述的薄膜晶体管的制造方法，
其特征在于，通过采用包含氢氧化钠水溶液的蚀刻液体执行对半导体薄膜形成膜(15a)的蚀刻。
16.如权利要求12所述的薄膜晶体管的制造方法，
其特征在于，在连续形成包含氧化锌的半导体薄膜形成膜(15a)和保护膜形成膜(16a)之前形成源极(11)和漏极(12)。
17.如权利要求16所述的薄膜晶体管的制造方法，
其特征在于，在源极(11)和漏极(12)上形成由包含氧化锌的材料制成的多个电阻接触层形成层(31a，31b)。
18.如权利要求17所述的薄膜晶体管的制造方法，
其特征在于，通过在源极(11)和漏极(12)上形成电阻接触层形成层(31)并通过采用包含碱性水溶液的蚀刻液体对电阻接触层形成层进行蚀刻而执行形成电阻接触层形成层(31a，31b)的步骤。
19.如权利要求17所述的薄膜晶体管的制造方法，
其特征在于，在形成与保护膜(16)具有基本上相同平面形状的半导体薄膜(15)之后，通过采用保护膜(16)作为掩模对电阻接触层形成层(31a，31b)进行蚀刻而形成多个电阻接触层(13，14)。
20.如权利要求19所述的薄膜晶体管的制造方法，
其特征在于，通过采用包含氢氧化钠水溶液的蚀刻液体执行对电阻接触层形成层(31a，31b)的蚀刻。
21.如权利要求12所述的薄膜晶体管的制造方法，
其特征在于，在栅极(18)上形成上绝缘膜(19)。
22.如权利要求21所述的薄膜晶体管的制造方法，
其特征在于，在上绝缘膜(19)上形成辅助电容器电极(6)。
23.如权利要求22所述的薄膜晶体管的制造方法，
其特征在于，辅助电容器电极(6)被形成为基本上完全覆盖半导体薄膜(15)。
24.如权利要求23所述的薄膜晶体管的制造方法，
其特征在于，在辅助电容器电极(6)上形成外套膜(20)。
25.如权利要求24所述的薄膜晶体管的制造方法，
其特征在于，在外套膜(20)上形成与源极(11)电连接的像素电极(4)。
26.如权利要求25所述的薄膜晶体管的制造方法，
其特征在于，像素电极(4)的形成包括形成穿过外套膜(20)、上绝缘膜(19)以及栅极绝缘膜(17)以露出一部分源极(11)的接触孔(21)的步骤。
27.如权利要求12所述的薄膜晶体管的制造方法，
其特征在于，在栅极绝缘膜(17)上形成与栅极(18)电绝缘的辅助电容器电极(6)。
28.如权利要求27所述的薄膜晶体管的制造方法，
其特征在于，在栅极绝缘膜(17)和栅极(18)上形成外套膜(20a)。
29.如权利要求28所述的薄膜晶体管的制造方法，
其特征在于，在外套膜(20a)上形成与源极(11)相连的像素电极(4)。
30.如权利要求29所述的薄膜晶体管的制造方法，
其特征在于，像素电极(4)的形成包括通过穿过栅极(18)和外套膜(20a)露出一部分源极(11)的步骤。
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| CN103531641A (zh) * | 2013-06-27 | 2014-01-22 | 友达光电股份有限公司 | 薄膜晶体管及其制造方法 |
| CN103531641B (zh) * | 2013-06-27 | 2017-04-26 | 友达光电股份有限公司 | 薄膜晶体管及其制造方法 |
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| WO2022057024A1 (zh) * | 2020-09-15 | 2022-03-24 | 信利半导体有限公司 | 一种显示面板及显示装置 |
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| JP2006344849A (ja) | 2006-12-21 |
| EP1889298B1 (en) | 2020-07-29 |
| TWI302034B (en) | 2008-10-11 |
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| US7566904B2 (en) | 2009-07-28 |
| US20060284172A1 (en) | 2006-12-21 |
| US20080305575A1 (en) | 2008-12-11 |
| EP3651209A1 (en) | 2020-05-13 |
| TW200705674A (en) | 2007-02-01 |
| US7585698B2 (en) | 2009-09-08 |
| CN100583457C (zh) | 2010-01-20 |
| KR100908557B1 (ko) | 2009-07-20 |
| KR20070107058A (ko) | 2007-11-06 |
| EP1889298A1 (en) | 2008-02-20 |
| WO2006132439A1 (en) | 2006-12-14 |
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