JP4999400B2 - 酸化物半導体膜のドライエッチング方法 - Google Patents
酸化物半導体膜のドライエッチング方法 Download PDFInfo
- Publication number
- JP4999400B2 JP4999400B2 JP2006216857A JP2006216857A JP4999400B2 JP 4999400 B2 JP4999400 B2 JP 4999400B2 JP 2006216857 A JP2006216857 A JP 2006216857A JP 2006216857 A JP2006216857 A JP 2006216857A JP 4999400 B2 JP4999400 B2 JP 4999400B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- oxide semiconductor
- semiconductor film
- dry etching
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
- H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Drying Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006216857A JP4999400B2 (ja) | 2006-08-09 | 2006-08-09 | 酸化物半導体膜のドライエッチング方法 |
| US11/775,561 US7767106B2 (en) | 2006-08-09 | 2007-07-10 | Method of dry etching oxide semiconductor film |
| CNB200710140773XA CN100514582C (zh) | 2006-08-09 | 2007-08-09 | 干蚀刻氧化物半导体膜的方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006216857A JP4999400B2 (ja) | 2006-08-09 | 2006-08-09 | 酸化物半導体膜のドライエッチング方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008042067A JP2008042067A (ja) | 2008-02-21 |
| JP2008042067A5 JP2008042067A5 (enExample) | 2009-09-17 |
| JP4999400B2 true JP4999400B2 (ja) | 2012-08-15 |
Family
ID=39051342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006216857A Expired - Fee Related JP4999400B2 (ja) | 2006-08-09 | 2006-08-09 | 酸化物半導体膜のドライエッチング方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7767106B2 (enExample) |
| JP (1) | JP4999400B2 (enExample) |
| CN (1) | CN100514582C (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170200602A1 (en) | 2014-09-24 | 2017-07-13 | Central Glass Company, Limited | Method for removing adhering matter and dry etching method |
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| KR102112799B1 (ko) | 2008-07-10 | 2020-05-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 및 전자기기 |
| JP2010056541A (ja) | 2008-07-31 | 2010-03-11 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| TWI469354B (zh) | 2008-07-31 | 2015-01-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
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| JP2984595B2 (ja) * | 1996-03-01 | 1999-11-29 | キヤノン株式会社 | 光起電力素子 |
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| US20010008227A1 (en) * | 1997-08-08 | 2001-07-19 | Mitsuru Sadamoto | Dry etching method of metal oxide/photoresist film laminate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20170200602A1 (en) | 2014-09-24 | 2017-07-13 | Central Glass Company, Limited | Method for removing adhering matter and dry etching method |
| US10153153B2 (en) | 2014-09-24 | 2018-12-11 | Central Glass Company, Limited | Method for removing adhering matter and dry etching method |
Also Published As
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| US7767106B2 (en) | 2010-08-03 |
| CN101123194A (zh) | 2008-02-13 |
| JP2008042067A (ja) | 2008-02-21 |
| US20080038929A1 (en) | 2008-02-14 |
| CN100514582C (zh) | 2009-07-15 |
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