TW539891B - Liquid crystal display - Google Patents
Liquid crystal display Download PDFInfo
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- TW539891B TW539891B TW085116278A TW85116278A TW539891B TW 539891 B TW539891 B TW 539891B TW 085116278 A TW085116278 A TW 085116278A TW 85116278 A TW85116278 A TW 85116278A TW 539891 B TW539891 B TW 539891B
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- liquid crystal
- crystal display
- electrode
- film
- gate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Description
A7
經¾部智慧財產局員工消費合作社印制农 整個表面上而形成。接著’用以連接沒極21b與像素電 極之接觸孔藉由第六光刻蝕於保護薄膜23上而形成。 此時,保濩薄膜並不形成於塾片區中。 接者,像素電極25藉由沉積一銦錫氧化物於所得 結構的整個表面上並實施第七光祕於ITO薄膜上而形 成其中該銦錫氧化物係為一透明導電材料。因此,沒 極训與像素電極25藉由接觸孔而連接用以使像素電 極藉由消去在汲極21b上部份的保護薄膜而形成。 根據傳統製造LCD的方法,需要至少七次的光刻# 步驟’第一步驟為圖樣化閘極,第二步驟為形成陽極氧 化物薄膜’第三步驟為形成半導體薄膜圖冑,第四步驟 為形成接觸孔,第五步驟為圖樣化源極與沒極,第六步 驟為形成用於像素電極之接觸孔,以及第七步驟為圖樣 化像素電極。因此’製作過程為耗時的且需要許多光罩, 而造成成本的增加及低產率。 再者,即使使用純A1為閘極材料,在形成閘極之 後’在高溫處理以形成包含鎳薄膜、非晶形矽薄膜及摻 入不純物非晶形矽薄膜之三層薄膜時可能會造成小丘狀 物。 為解決上述之問題,本案發明人建議一種藉由形成 覆蓋金屬薄膜以減少光罩數目自傳統方法的七張減至五 張的方法’該形成覆蓋金屬薄膜係利用紹合金為閉極及 耐火金屬在閘極之上或之下並同時的形成保護薄膜與接 觸孔。
(請先閱讀背面之注意事項再填寫本頁)
Jr --線美 本紙張尺度適用中國國家標準(CNS)A4規格(210 297公釐) -6- 539891 A7
經濟部智慧財產局員工消費合作社印製
五、發明說明(4 第2圖係為說明韓國專利申請案第95-42618號所 揭露之一種利用五張光罩製造TFT-LCD方法之一實施例 的截面圖。在第2圖中,標號30表示基質,標號32表 示鋁合金薄膜’標號34表示由耐火金屬製的覆蓋薄膜, 標號36表示如氮化物之絕緣薄膜,標號表示非晶形 砂薄膜,標號40a表示摻入不純物非晶形矽薄膜,標號 42a表示源極,標號42b表示汲極,標號44表示保護 薄膜,以及標號46表示像素電極。 參考第2圖,形成於TFT及墊片區之閘極具有雙層 結構’其為順序地沉積由A1或如A卜Nd或A卜Ta之A1 合金製成之第一金屬薄膜32及由如Cr、Mo或Ti之耐 火金屬製成之第二金屬薄膜34所形成。 在TFT區中,像素電極46與汲極42b藉由蝕刻保 護薄膜44所形成之接觸孔而連接。在墊片區中,接觸 孔藉由同時蝕刻保護薄膜44與形成於第二金屬薄膜34 上之絕緣薄膜26以曝露出一部份的第二金屬薄膜36 , 閘極(32 + 34)與由ΐτο所製之像素電極铛經由接觸孔而 連接。 根據前述之方法,第二金屬薄膜34作為覆蓋薄膜 形成於由A1或如M—Nd或A1—Ta之M合金所形成之第 一金薄膜22上,藉以省略形成陽極氧化物薄膜之程序。 且,同時蝕刻絕緣薄膜36與保護薄膜44可減少光刻蝕 程序的數目。 第3圖為說明使用五張光罩以製造tft_lcd的方法 a 本紙張尺度顧+關家標準(CNS)A4規格(21〇χ29_ί 裝— (請先閱讀背面之注意事項再填寫本頁) . .線_ •7· 539891 經濟部智慧財產局員工消費合作社印製 A7 ____-_ B7___ 五、發明說明(3 的其它實施例,係如韓國專利申請案第95 —6217〇號所 揭露為本發明之發明人所推薦者。第3圖中,標號50 表示基質,標號51表示由耐火金屬所製之第一金屬薄 膜’標號53表示由AL或AL合金薄膜所製之第二金屬 薄膜’標號55表示絕緣薄膜,標號57表示非晶形石夕薄 膜,標號59摻入不純物非晶形矽薄膜,標號61a表示 源極,標號61b表示汲極,標號61c表示墊片電極,標 號63表示保護薄膜,以及標號67表示像素電極。 參考第3圖,形成於TFT及墊片區之閘極具有雙層 結構’其為順序地沉積由如Cr、Mo或Ti之耐火金屬製 成之第一金屬薄膜34與由A1或A1所製之第二金屬薄 膜53 〇 在TFT區中,像素電極47與汲極61b藉由蝕刻保 護薄膜63所形成之接觸孔而連接。在墊片區中,由第 金屬/彝膜51與第一金屬薄膜5 3所組成之閘極與塾片 電極61c藉由像素電極67而連接。形成於墊片區之閘 極61a具有已蝕刻與像素電極67接觸之第二金屬薄膜 53 〇 根據前述之方法,光刻蝕程序的數目可被減少。再 者,藉由形成具有雙層結構(耐火金屬薄膜與A1薄膜沉 積於其上)之閘極,可抑制小丘狀A1的形成。且,介於 Ik後步驟所形成之像素電極與A丨薄膜之間的接觸電阻 可藉由在墊片區形成像素電極之前先蝕刻形成閘極之 A1薄膜而減低。 本紙張尺度刺巾關家鮮(CNS)A4規格(210 x 297么、g)_ {請先閱讀背面之注意事項再填寫本頁} 訂:ί----線泰 -8> 539891 五、 經濟部智慧財產局員工消費合作社印製 A7 發明說明(各 然而,上述兩方法具有以下由第4圖說明之缺點。 第4圖為第2與3圖所示製造LCD之佈局配置圖,但僅 示出墊片區。在第4圖中,標號Ml表示用以圖樣化墊 片電極之光罩圖樣,標號M2表示用以形成連接像素電 極與塾片電極之接觸孔之光罩圖樣,以及標號M3表示 用以圖樣化像素電極之光罩圖樣。 第一,由形成在第一製造方法於耐火金屬/AK或A1 合金)結構中形成於墊片區之墊片電極來看,A1與ιτο 直接地互相接觸於如第4圖中,,A"的部份。如此,若A1 與ιτο直接地互相接觸,IT〇可能會在圖樣化IT〇的光 刻姓程序中由於顯影液因電池作用而溶於顯影液中,或 在驅動LCD時氧化物薄膜可能會因驅動電流而形成。 第二’由形成如第二製造方法中形成於A1 (或A1 合金)/耐火金屬結構中之墊片電極來看,若在蝕刻保護 薄膜與絕緣薄膜之後蝕刻位於墊片電極上之A1 4(A1 。金)’A1與ΙΤΟ會直接互相接觸於如第4圖所示之”以, 部份。 第三’在墊片區之ΙΤ0與在具有彩色過渡器形成的 上層基質之ΙΤ0為重疊的’其中兩ΙΤ〇電極由於介於兩 者間之導電顆粒而易於短路。 第四’由於絕緣薄膜與保護_為㈣㈣以連接 在塾片區之閘極與塾片極,絕緩笼 、色緣4膜與保護薄膜之蝕刻 部位幾乎垂直於基質。因此, 此產生一差的步驟區域於沉 積I TO薄膜之後續程序中。 本紙張尺度適用中關家標準(&;S)A4規格(210 x 297公£ I --------^ -------— (請先閱讀背面之注意事項再填寫本頁) 539891 A7
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I 經濟部智慧財產局員工消費合作社印制衣 539891 五、發明說明( ,以及實苑第三光刻蝕於透明導電薄膜、半導體薄膜 圖樣與第二金屬薄膜圖樣上以形成資料線、源/汲極與 像素電極。 上述本發明之目的與優點將藉由較佳實施例參考附 圖之洋細#兒明而更加清楚。 第1A至1D圖為說明傳統製造LCD之方法的截面 圖。 第2至3圖^說明使用五張光罩製造LCD之方法之 例的截面圖。 第4圖為如第2及3圖所示之製造五張光罩LCD之 墊片區的平面簡圖。 第5圖為說明根據本發明製造LCD的方法的平面 圖。 第6圖為墊片區之平面簡圖,用以說明根據本發明 第一實施例製造LCD的方法。 第7A至7E圖為說明根據本發明第一實施例製造 LCD之方法的戴面圖。 第8圖為說明根據本發明第二實施例製造lcd之方 法的平面簡圖。 第9圖為說明根據本發明第二實施例製造LCD之方 法的截面圖。 第10圖為說明根據本發明第三實施例製造LCD之 方法的平面圖。 第Π A至11E圖為顯示根據本發明第二實施例製造 -12· ϋ氏張尺度適用~中國國家標準(CNS)A4規格(210 X 297公爱] ---- itl—------線 (請先閱讀背面之注意事項再填寫本頁) 539891
五、發明說明(金〇 LCD之方法連續步驟的截面圖。 第12至14圖為說明根據本發明第四至第六實施例 製造LCD之方法的平面圖。 第15A至18A圖,以及第15B至18B圖分別為說明 根據本發明第七實施例製造LCD之方法的平面圖以及截 面圖。
經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 第19圖為說明根據本發明第八實施例製造LCI)之 方法的截面圖。 第20圖為說明根據本發明第九實施例製造LCD之 方法的截面圖。 第21圖為說明根據本發明第十實施例製造LCD之 方法的截面圖。 以下,將參考附圖詳細說明本發明之詳細實施例。 第5圖為說明根據本發明製造[CD的方法的平面 參考第5圖,多數閘線1為橫向形成,並提供多數 閘墊片2於個別閘線1之一端。薄膜電晶體5與像素電 極6連接至閘線1。且,多數資料線3為縱向形成,並 提供多數資料墊片4於個別資料線3之一端。由單位閘 線1與資料線3所圍繞之一部份成為一像素。 第6圖為一墊片區之平面簡圖,用以說明根據本發 明第一實施例製造LCD的方法,其中標號” P1 ”表示用以 圖樣化墊片電極之光罩圖樣,標號"P2”表示用以形成藉 蝕刻絕緣薄膜與保護薄膜以連接像素電極及墊片電極之
539891 A7 B7 五、發明説明(1·4 ) 面圖,僅顯示出墊片區,其中保護薄膜與絕緣薄膜之開口 大於閘墊片圖樣,且ITO薄膜大於保護薄膜與絕緣薄膜之 開口部份。因此,其它非閘墊片圖樣之基質部份經過蝕刻 至最小,且A1或A1合金薄膜僅曝露出’,(:’’的部份。 第11A至11E圖為顯示根據本發明第二實施例製造 LCD之方法連續步驟的截面圖。 參考第11A圖,第一金屬薄膜92係由沉積如Cr、Mo、 Ta或Ti之耐火金屬於透明基質90上而形成。接著,第二 金屬薄膜94係由沉積A1或A1合金第一金屬薄膜92上而 形成。之後,藉由實施第一光刻蝕於第二金屬薄膜與第一 金屬薄膜上以分別於TFT區及墊片區形成閘極及閘墊片。 第二金屬薄膜94之寬度係小於第一金屬薄膜92之寬度, 且第二金屬薄膜係由此第二金屬薄膜之底部開始變窄。 參考第11B圖,沉積一氮化物薄膜於具有閘極形成 於其上之基質的整個表面上,以形成絕緣薄膜96。接 著’形成包含非晶形矽薄膜98與摻入不純物非晶形矽 薄膜100的半導體薄膜於具有氮化物薄膜形成於其上之 基質的整個表面。之後,藉由實施第二光刻蝕於半導體 薄膜上’以在TFT區形成作為活性區域之半導體薄膜囷 樣。 參考第11C圖’藉由沉積如Cr、Ti或Mo之金屬於 具有半導體薄膜圖樣形成於其上之基質的整個表面上以 形成第二金屬薄膜。接著,藉由實施第三光刻蝕於第三 金屬薄膜上以在TFT區形成源極i〇2a與汲極i〇2b。此 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公楚) ...... 裝 .....·訂------------------線 frfr,':先聞汸背面之注意寧項再蜞趑本頁) •17- 539891 經濟部智慧財產局員工消費合作社印制π A7 ---------B7____ 五、發明說明(金5 時’覆蓋於閘極上的摻入不純物非晶形矽薄膜丨〇〇亦經 過姓刻以曝露出位於下面的非晶形矽薄膜98的表面。 參考第11D圖,藉由沉積氮化物薄膜於具有源極 l〇2a與汲極l〇2b形成於其上之基質的整個表面上,以 形成保護薄膜。接著,藉由實施第四光刻蝕於保護薄膜 上以形成保護薄膜圖樣1 〇4。此時,在T7T區中,位於 及極1 〇 2 b上之保護薄膜經過部份地餘刻以曝露出一部 份之汲極102b。在墊片區中之閘墊片,即為位於第二 金屬薄膜94上之絕緣薄膜經過蝕刻以曝露出閘墊片之 表面。 參考第11E圖,由位於墊片區之保護薄膜圖樣1〇4 所開口之第一金屬薄膜94經過姓刻,以減低介於像素 電極與閘墊片之間的接觸電阻。之後,在形成透明導電 4膜之I TO薄膜於具有部份蚀刻的第二金屬薄膜94的 所得結構之基質的整個表面上後,實施第五光刻蝕於 Iτο薄膜上以形成像素電極1 。因此,在TFT區中, 汲極102b與像素電極106為連接的。在墊片區中,包 含第一金屬薄膜92及第二金屬薄膜94之閘墊片與像素 電極106為連接的。
根據本發明前述之第三實施例,製造LCD所需之光 罩數目僅為5張。且可由利用耐火金屬/A1或M合金 所製之具有雙層結構的閘極以避免小丘狀之A1形成。 且,在墊片區中形成像素電極之前先蝕刻形成閘墊片之 A1薄膜,可減少在後續程序中所形成之像素電極與M 本紙張尺度刺+國國家標準(CNS)A4規格(210 X 297公爱) ----------------- (請先閱讀背面之注意事項再填寫本頁) -18- 539891
薄膜之接觸。絕緣薄膜與保護薄膜之開口大於每一個閘 墊片圖樣’藉以減小在圖樣化閘墊片時對基質之蝕刻。 藉由形成大於保護薄膜與絕緣薄膜開口部份的像素電 極,以保護位於開口部份之閘塾片。 經濟部智慧財產局員工消費合作社印製 第12圖為說明根據本發明第四實施例^^ LCd之 方法的平面簡圖。如第丨2圖所示,由於保護薄膜與絕 緣薄膜之開口所產生介於A1肖像素電極間的接觸部份 可藉由閘墊片的一端與多數互連的形成而減至最小。 且,閘墊片的一端可用作為多餘的互連。 第13圖為說明根據本發明第五實施例製造lcd之 方法的平面簡圖。如同第三實施例,閘極係以Al (或ai 合金)/耐火金屬之雙層結構形成,絕緣薄膜與保護薄膜 之開口大於閘塾片圖樣,且像素電極之形成係大於絕緣 與保護薄膜之開口部份。再者,提供—用以形成第一材 料層之光罩圖樣P5以在形成用於像素電極之IT〇薄膜 之寺改良在墊片區中保護與絕緣薄膜之蝕刻部份之階段 覆盖的部份。 如本發明第二實施例之說明,第一材料層ρ5藉由 圖樣化半導體薄膜而形成’故被留置於保護薄膜與絕緣 薄膜經敍刻之邊界部份令;或藉由圖樣化第三金屬薄 膜’故部份留置以利用第三金屬薄膜形成源極與沒極。 因此,不需要另外之光㈣步驟即可改良用於像素電極 之ΙΤΟ之階段覆蓋。 第14圖為說明根據本發明第六實施例製造⑽之 裂--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國fey豕辟(CNS)A4規格(210 297公釐) -19- 539891 A7 五、發明說明(七 方法的平面簡圖,其中絕緣薄膜與保護薄膜之開口係大 於閘墊片圖樣,且用於像素電極之IT〇薄膜不形成於第 二金屬薄膜之蝕刻部份。因此,用於像素電極之ΙΤ〇薄 膜蝕刻於’’ D”的部份,如此a 1薄膜不會接觸I τ〇薄膜。 第15A至18A圖,以及第15B至18B圖分別為說明 根據本發明第七實施例製造LCD之方法的平面圖以及截 面圖。 參考第15A至18A圖,第一金屬薄膜藉由沉積厚度 為2000 A〜4000人如Cr、Al、Ta或Mo之金屬於透明 基質上而形成,接著實施第一光刻蝕於第一金屬薄膜上 以形成閘圖樣112。閘圖樣112係用作為閘極、閘互連、 閘墊片電極或薄膜電晶體(TFT)附加的電容電極。 經濟部智慧財產局員工消費合作社印製 參考第16A至16B圖,,沉積厚度為3000 A〜4〇〇〇 A之氮化物薄膜或氧化物薄膜於具有閘圖樣丨丨2形成於 其上之基質Π 0的整個表面上,以形成絕緣薄膜114。 接著’沉積非晶形石夕薄膜116與摻入不純物非晶形石夕薄 膜118於具有絕緣薄膜114形成於其上之基質上以形成 半導體薄膜。接著,沉積選自Cr、Al、Ta、Mo及Ti所 組成之族群的金屬於摻入不純物非晶形矽薄膜丨丨8上以 开》成第二金屬薄膜120。之後,實施第三光刻餘於第二 金屬薄膜120、摻入不純物非晶形矽薄膜丨丨8及非晶形 矽薄膜116之上以形成第二金屬薄膜圖樣與半導體薄膜 圖樣。 參考第17A至17B圖,如IT0薄膜之透明導電薄膜 私紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱
4 經濟部智慧財產局員工消費合作社印製 形成於具有第二金屬薄膜圖樣與半導體薄膜圖樣形成於 其上之基質110的整個表面上。接著,藉由實施第三光 刻蝕於透明導電薄膜、第二金屬薄膜120與摻入不純物 非晶形矽薄膜118之上以形成資料線123、源極i2〇a、 /及極120b與像素電極122。此時,覆蓋於閘圖樣112 上的非晶形矽薄膜116係部份地曝露。 參考第18A至18B圖,藉由沉積如氮化物薄膜於基 質110的整個表面上以形成保護薄膜124,接著,藉由 實施第四光刻餘於保護薄膜12 4上。此時,位於像素電 極112上之保護薄膜12 4經過钱,且位於閘塾片112上 之保護薄膜124與絕緣薄膜π 4經過部份地蝕刻以開口 出一部份之閘墊片電極。於第18B圖中,標號125表示 保護薄膜經蝕刻之區域。 根據本發明第七實施例,生產成本可因僅採用四次 光刻姓程序而大量減低。再者,可增加產率。 在第七實施例中,閘圖樣係形成單金屬薄膜。然而, 閘圖樣可利用A1(或A1合金)/耐火金屬,或耐火金屬 /A1(或A1合金)之雙層金屬薄膜而形成。 第19圖為說明根據本發明第八實施例製造LCD之 方法的截面圖,其顯示閘圖樣112係由耐火金屬/ a 1所 形成。此例中,由蝕刻來自形成閘墊片之金屬的上層鋁 使A1不曝露於空氣中,藉此避免氧化物薄膜之形成。 第20圖為說明根據本發明第九實施例製造LCD之 方法的截面圖,其顯示閘圖樣112係由A1/耐火金屬所 -21- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) --------訂·----I I --- (請先閱讀背面之注意事項再填寫本頁) 539891
經濟部智慧財產局員工消費合作社印製 形成。 藉由使用A1或A1合金形成具雙層薄膜之閘圖樣可 達成低電阻閘互連。且,在1(:連接時使用耐火性金屬 可增加閘墊片之互連可靠度。 第21圖為說明根據本發明第十實施例製造lcd之 方法的截面圖’其顯示一完成之LCD之截面。 參考第21圖,在形成具有氮化物薄膜之保護薄膜 於經過以如第七實施例之方法圖樣化像素電極之步驟的 %序所得結構之整個表面後,實施一用以圖樣化像素電 極之光刻蚀。此時,以含有黑色顆粒之黑色光阻126取 代一般用於圖樣化保護薄膜之光阻。在完成保護薄膜之 圖樣化程序後,將黑色光阻126留下而不消除,塗覆聚 亞胺於其上以形成定向薄膜128a,且由實施後續之步 驟以完成LCD。接著,由於黑色光阻126本身可遮蔽光 線’故後續步驟中在上層基質不需要其它個別用以遮蔽 光線的黑色型片。因此,可簡化製造方法且降低製造成 本。未界定之標號128b表示定向薄膜,標號13〇表示 上層基質’標號134表示普通電極,以及標號136表示 液晶。 如上所述,根據本發明之LCD的製造方法中,藉由 形成利用A1或A1合金與耐火金屬薄膜之雙層結構的閘 電極,可減少光刻蝕程序數目為5次。並可藉由釋放耐 火金屬薄膜之壓力以抑制小丘狀A1薄膜之生長。 且’由改變墊片區之圖樣以使A1與ITO間的接觸 -22- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) --------^..—►----- (請先閱讀背面之注意事項再填寫本頁) 539891 A7 ----Β7五、發明說明(允 4 經濟部智慧財產局員工消費合作社印製 減至最小,藉此可有效地避免在為像素電極圖樣化IT〇 薄膜時顯影液之電池效應。 再者,圖樣化塾片區之ιτο薄膜以與彩色基質之I το 薄膜以一預定距離分離,藉此避免兩IT〇薄膜由於導電 顆粒而造成彼此短路。 且’用於源/沒之半導體薄膜或金屬薄膜形成於保 護薄膜與絕緣薄膜同時圖樣化之塾片區的一部份中,藉 此改良用於像素電極之ΙΤ0薄膜之階段覆蓋。 在#刻保護薄膜與絕緣薄膜時,可藉由將保護薄膜 與絕緣薄膜為每個閘墊片圖樣開口,以抑制墊片間基質 的蝕刻。 且’藉由同時圖樣化用於源/沒之金屬薄膜與半導 體薄膜,可減少光刻蝕程序的數目。 再者’在使用黑色光阻作為圖樣化保護薄膜之光罩 的例子中,黑色光阻可作為其使用。即,因為在上層基 質中不需要形成其它個別的黑色型片,可簡化製造方法 且降低製造成本。 雖然本發明參考上述實施例作詳細之說明,但本發 明並不限於此些實施例,且可由熟於是項技藝者在本發 明之範圍中作不同之改變與修正。 --------^ --------I (請先閱讀背面之注意事項再填寫本頁) -23- 本紙張尺度適用中國國篆標準(CNS)A4規格⑵〇· 297公釐) 539891 發明說明(土 元件標號對照表 經濟部智慧財產局員工消費合作社印製 1 閘線 2 閘墊片 3 資料線 5 薄膜電晶體 6 像素電極 10 透明基質 11 閘極 13 陽極氧化物薄膜 15 絕緣薄膜 Π 非晶形矽薄膜 19 摻入不純物非晶形 矽薄膜 21 q 源極 21 b 汲極 21c 墊片電極 23 保護薄膜 25 像素電極 26 絕緣薄膜 30 基質 32 鋁合金薄膜 34 覆蓋薄膜 36 絕緣薄膜 38 非晶形矽薄膜 40a 摻入不純物非晶 發薄膜 42a 源極 42b 汲極 44 保護薄膜 46 像素電極 50 基質 51 第一金屬薄膜 53 第二金屬薄膜 55 絕緣薄膜 57 非晶形♦薄膜 59 摻入不純物非晶 矽薄膜 極極 源汲 61c 墊片電極 63 保護薄膜 67 像素電極 70 透明基質 72 第一金屬薄膜 74 第二金屬薄膜 --------訂-----Γ I I --- (請先閱讀背面之注意事項再填寫本頁) -24- 539891 A7 B7 五、發明說明(公 經濟部智慧財產局員工消費合作社印製 76 絕緣薄膜 120a 源極 78 非晶形矽薄膜 120b 汲極 82a 源極 122 像素電極 82b 汲極 123 資料線 84 保護薄膜圖樣 124 保護薄膜 88 第一材料層 126 黑色光阻 90 透明基質 128a 定向薄膜 92 第一金屬薄膜 128b 定向薄膜 94 第二金屬薄膜 130 基質 96 絕緣薄膜 134 普通電極 98 非晶形矽薄膜 136 液晶 100 摻入不純物非晶形 矽薄膜 102a 源極 102b 汲極 104 保護薄膜圖樣 106 像素電極 110 基質 112 閘圖樣 114 絕緣薄膜 116 非晶形矽薄膜 118 摻入不純物非晶形 矽薄膜 120 第二金屬薄膜 -25- ---------------------訂--------丨 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)
Claims (1)
- 539891 、申請專利範圍 r-一 ——η -· Ί - 第85116278號申請案申請專利範圍修正本 91.03.2T 1 · 一種液晶顯示器,包含: 一基體; 一形成於該基體之一TFT區上之閘極電極,包括一 第一金屬層與一位於該第一金屬層上之第二金屬層; 一形成於該基體之一墊片區上之閘極墊片,包括該 第一金屬層與位於該第一金屬層上之該第二金屬層; 一形成於具有該閘極電極與含有一曝光該閘極墊片 之一部份之接觸孔之閘極墊片的該基體上之絕緣層,其 中僅有相對於該基體之閘極塾片之_表面部份被曝光: 一形成於該TFT區之該絕緣層上之半導體層; 形成於該半導體層上之彼此隔離於該閘極電極上之 源極/汲極電極; 一以曝光該TFT區之該沒極電極之一部份而形成於 該源極/:¾極電極上、及以曝㈣塾片區之該開極塾片 之該曝光部份而形成於該絕緣層上之保護層; 一連接到該汲極電極之第一像素電極;及 一連接到該閘極墊片之第二像素電極。 2. 如申請專利範圍第!項所述之液晶顯示器,其中該第二 像素電極係、經由該絕緣層之該接觸孔或曝光該問極 之該側邊之該保護層與該開極塾片之該側邊接觸 3. 如申請專利龍第2項所述之液晶顯示器,以 像素電極係與該閘極塾片之該第_金屬層之'一 及該閉極墊片之該第二金屬層之一側壁‘觸。部表面 ^39891、申請專利範圍 4.如申請專利範圍第1項所述之液晶顯示器,其中該第一 金屬層包含一耐火金屬層。 5·如申請專利範圍第1項所述之液晶顯示器,其中該第二 金屬層包含-由㈣合金組成之—群組中選出之材—料 0 6·如申請專利範圍第!項所述之液晶顯示器,其中該第二 像素電極係與該保護層之至少一部份重疊。 7·如申印專利範圍第1項所.述之液晶顯示器,其中該第二 像素電極係經由該絕緣層之該接觸孔、或曝光該閘極墊 片之該内邊之該保護層與該閘極墊片的該内邊接觸。 8·如申請專利範圍第7項所述之液晶顯示器,其中該第一 金屬層包含一由鋁或鋁合金組成之該群組中選出之材料 〇 9.如申請專利範圍第8項所述之液晶顯示器,其中該第二 金屬層包含一耐火金屬層。 10·如申請專利範圍第丨項所述之液晶顯示器,其中該閘極 塾片具有一與該保護層之至少一部份重疊之表面。 11 ·如申請專利範圍第1項所述之液晶顯示器,其中該第二 金屬層之一寬度係等於或小於該第一金屬層之該較高表 面之一寬度。 12 ·如申凊專利範圍第1項所述之液晶顯示器,其中該第二 金屬層之該寬度係由該第二金屬層之該底部開始變窄。 13. —種液晶顯示器,包含: 一基體; 本紙張尺度適用中國國家標準(CNs) A4規格(210X297公爱) 27 --------------------裝..................、訂..................皞 (請先閲讀背面之注*事项再堆荈本頁) 539891 A8 B8 C8 D8 六、申請專利範圍 一形成於該基體上之閘極電極,包含一形成於一基 體上之第一金屬層與一形成於該第一金屬層上之第二金 屬層; 一形成於該基體上之閘極墊片,包含該等第一與第 二金屬層; 一曝光該閘極墊片之該第二金屬層之一部份、形成 於該閘極電極上之絕緣層圖案; 一形成於該絕緣層圖·案上之半導體層; 一形成於該半導體膜圖案上之雜質摻雜半導體膜圖 案,其中該雜質摻雜半導體膜圖案接觸該半導體膜圖案 之該頂部表面且該雜質摻雜半導體膜圖案係被分離以曝 光相對於該閘極電極之該半導體層之一部份; 形成於該雜質摻雜半導體膜圖案之一部份上之源極 /汲極電極; 一开> 成於該源極/汲極電極與該絕緣層上之保護層 ,其中該保護層具有位於該汲極電極上之接觸孔且係曝 光至該閘極塾片; 一電軋連接至該沒極電極之第一像素電極圖案;及 一電氣連接到該閘極墊片區之第二像素電極圖案。 14·如申請專利範圍第13項所述之液晶顯示器,其中該第 一像素電極圖案係經由該絕緣層之該接觸孔或曝光該閘 極墊片之該側邊之該保護層而與該閘極電極之該側邊部 份接觸。 15·如申請專利範圍第14項所述之液晶顯示器,其中該第 本紙張从適财_家標準(⑽A4規格(210X297公釐) (請先Ktt背面之注*事項再填趑本頁)28 539891 A8 B8 C8 D8 •申請專利範圍 二像素電極圖案係與該問極墊片之該第一金屬層之一頂 部表面及該閘極墊片之該第二金屬層之側壁接觸。 16. 如申請專利範圍第14項所述之液晶顯示器,其中該第 -金屬層包含—耐火金屬且該第二金屬層包含一由鋁或 链合金組成之該群組中選出之材料。 17. 如申請專利範圍第14項所述之液晶顯示器,其中該第 一金屬層包含一由鋁或鋁合金組成之該群組中選出之材 料且該第二金屬層包含一耐火金屬。 18·如申請專利範圍第13項所述之液晶顯示器,其中該第 像素電極圖案係與該保護膜層之至少一部份重叠。 19. 如申請專利範圍第13項所述之液晶顯示器,其中該第 一像素電極圖案係經由該絕緣層之該接觸孔、或曝光該 閘極墊片之該内邊之該保護層而與該閘極墊片之該内邊 接觸。 20. 如申請專利範圍第19項所述之液晶顯示器,其中該第 一金屬層包含一耐火金屬且該第二金屬層包含一由鋁或 链合金組成之該群組中選出之材料。 21. 如申請專利範圍第19項所述之液晶顯示器,其中該第 一金屬層包含一由鋁或鋁合金組成之該群組中選出之材 料且該第二金屬層包含一耐火金屬。 22·如申請專利範圍第丨3項所述之液晶顯示器,其中該閘 極墊片具有一與該保護膜層之至少一部份重疊之表面。 23·如申請專利範圍第13項所述之液晶顯示器,其中該第 二金屬膜之一寬度係等於或小於該第一金屬膜之該較高 29 諸先wtt背面之注意事項再填^本頁) 線丨 本紙張尺度適用中國國家標準(CNS) A4規格(21〇χ297公釐) 539891 C8六、申請專利範圍 表面之一寬度。 # (請先閲讀背面之注意事項再填寫本頁) 24.如申請專利範圍第13項所述之液晶顯示器,其中該苐 金屬膜之見度係由該第二金屬膜之該底部開始變窄 25· —種液晶顯示器,包含: 一基體; 一形成於一基體上之閘極電極; 一形成於該基體上之閘極墊片; 一曝光該閘極墊片之一頂部表面、形成於該閘極電 極上之絕緣層圖案; 一形成於該絕緣層圖案上與該閘極墊片上之半導體 層; 組 .訂卜 一形成於該半導體膜圖案上之雜質摻雜半導體膜圖 案,其中該雜質摻雜半導體膜圖案接觸該半導體膜圖案 之該頂部表面且該雜質摻雜半導體膜圖案係被分離以曝 光相對於該閘極電極之該半導體層之一部份; 形成於該雜質摻雜半導體膜圖案之一部份上之一源 極電極與一:;及極電極; 一形成於該源極/汲極電極與該絕緣層上之保護層 ,其中該保護層具有一位於該汲極電極上之接觸孔且係 曝光至該閘極墊片; 一電氣連接至該汲極電極之第一透明傳導膜圖案· 及 > 一電氣連接到該閘極墊片之該曝光區之第二透明傳 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) 30 539891導膜圖案。 26·如申請專利範圍第25項所述之液晶顯示器,其中該第 一透明傳導層係與該保護層之至少一部份重疊。 27·如申請專利範圍第25項所述之液晶顯示器,其中該問 極塾片具有一與該保護層之至少一部份重疊之表面。 28·如申請專利範圍第25項所述之液晶顯示器,其中該問 W 極電極之一寬度係由該閘極電極之該底部開始變窄。 29·如申請專利範圍第25項所述之液晶顯示器,其中該閘 極電極包含至少一耐火金屬膜。 3〇·如申請專利範圍第29項所述之液晶顯示器,其中該耐 火金屬膜之一寬度係由該耐火金屬膜之該底部開始變窄 〇 * 31 ·如申請專利範圍第25項所述之液晶顯示器,其中該第 一透明傳導膜圖案係經由該絕緣層之該接觸孔、或曝光 該問極墊片之該側邊之該保護層與該問極墊片之該側邊 接觸。 32·如申请專利範圍第31項所述之液晶顯示器,其中該第 一透明傳導膜圖案係與該閘極墊片之該第一金屬層之一 頂部表面及該閘極墊片之該第二金屬層之側壁接觸。 33·如申請專利範圍第32項所述之液晶顯示器,其中該閘 極墊片具有一與該保護膜層之至少一部份重疊之表面。 34·如申請專利範圍第32項所述之液晶顯示器,其中該問 極電極之一寬度係由該閘極電極之該底部開始變窄。 35·如申請專利範圍第32項所述之液晶顯示器,其中該問539891 A8 B8 C8 D8 、申請專利範圍 極電極包含至少一耐火金屬膜。 36·如申請專利範圍第35項所述之液晶顯示器,其中該咐 火金屬膜之一寬度係由該耐火金屬膜之該底部開始變窄 〇 37·如申請專利範圍第35項所述之液晶顯示器,其中該閘 極電極包含至少一與該耐火金屬膜不同之金屬膜。 38·如申請專利範圍第37項所述之液晶顯示器,其中該金 屬膜包含一由鋁或鋁合金組成之該群組中選出之材料。 39·如申請專利範圍第32項所述之液晶顯示器,其中該第 二透明傳導膜圖案係與該保護膜層之至少一部份重叠。 40·如申請專利範圍第25項所述之液晶顯示器,其中該第 二透明傳導膜圖案係經由該絕緣層之該接觸孔、或曝光 該閘極墊片之該内邊之該保護層與該閘極墊片之該内邊 接觸。 41·如申請專利範圍第4〇項所述之液晶顯示器,其中該閘 極墊片具有一與該保護膜層之至少一部份重疊之表面。 42.如申請專利範圍第4〇項所述之液晶顯示器,其中該閘 極電極之一寬度係由該閘極電極之該底部開始變窄。 43·如申請專利範圍第4〇項所述之液晶顯示器,其中該閘 極電極包含至少一耐火金屬膜。 44·如申請專利範圍第4〇項所述之液晶顯示器,其中該耐 火金屬膜之一寬度係由該耐火金屬膜之該底部開始變窄 45·如申請專利範圍第4〇項所述之液晶顯示器,其中 本紙張尺度適用中國國家標準(CNS) A4規格(21〇><297公爱) 該閘 t (請先閱讀背面之注意事項再填窩本頁) •訂卜 .镛· 32 W9891極電極包含至少一與該耐火金屬膜不同之金屬膜。 46·如申請專利範圍第45項所述之液晶顯示器,其中該金 屬膜包含一由鋁或鋁合金組成之該群組中選出之材料< 47·如申請專利範圍第40項所述之液晶顯示器,其中該第 二透明傳導膜圖案係與該保護膜層之至少一部份重義本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)
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KR1019950069746A KR100195278B1 (ko) | 1995-12-30 | 1995-12-30 | 액정표시장치의 제조방법 |
KR1019960044131A KR100238206B1 (ko) | 1996-10-05 | 1996-10-05 | 박막트랜지스터 액정 표시장치및 그 제조방법 |
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TW085116278A TW539891B (en) | 1995-12-30 | 1996-12-30 | Liquid crystal display |
TW090108351A TWI257012B (en) | 1995-12-30 | 1996-12-30 | Method for forming a liquid crystal display |
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JPH0618215B2 (ja) * | 1985-12-03 | 1994-03-09 | セイコー電子工業株式会社 | 薄膜トランジスタの製造方法 |
JP2940689B2 (ja) * | 1990-03-23 | 1999-08-25 | 三洋電機株式会社 | アクティブマトリクス型表示装置の薄膜トランジスタアレイ及びその製造方法 |
US5162933A (en) * | 1990-05-16 | 1992-11-10 | Nippon Telegraph And Telephone Corporation | Active matrix structure for liquid crystal display elements wherein each of the gate/data lines includes at least a molybdenum-base alloy layer containing 0.5 to 10 wt. % of chromium |
JPH05243333A (ja) * | 1992-02-26 | 1993-09-21 | Nec Corp | 薄膜電界効果型トランジスタ基板 |
JPH05323373A (ja) * | 1992-05-22 | 1993-12-07 | Fujitsu Ltd | 薄膜トランジスタパネルの製造方法 |
JPH06138487A (ja) * | 1992-10-29 | 1994-05-20 | Hitachi Ltd | 半導体装置と液晶表示装置 |
JP3098345B2 (ja) * | 1992-12-28 | 2000-10-16 | 富士通株式会社 | 薄膜トランジスタマトリクス装置及びその製造方法 |
JPH06230428A (ja) * | 1993-02-08 | 1994-08-19 | Hitachi Ltd | 液晶表示装置およびその製造方法 |
KR950019817A (ko) * | 1993-12-17 | 1995-07-24 | 이헌조 | 액정모듈의 수분방지용 패드 |
JP3281167B2 (ja) * | 1994-03-17 | 2002-05-13 | 富士通株式会社 | 薄膜トランジスタの製造方法 |
US5684547A (en) * | 1994-08-05 | 1997-11-04 | Samsung Electronics Co., Ltd. | Liquid crystal display panel and method for fabricating the same |
-
1996
- 1996-12-27 JP JP35145696A patent/JP3625598B2/ja not_active Expired - Fee Related
- 1996-12-30 TW TW085116278A patent/TW539891B/zh not_active IP Right Cessation
- 1996-12-30 TW TW090108351A patent/TWI257012B/zh not_active IP Right Cessation
- 1996-12-30 US US08/777,512 patent/US5731856A/en not_active Expired - Lifetime
-
2004
- 2004-01-07 JP JP2004002174A patent/JP2004163969A/ja active Pending
- 2004-01-07 JP JP2004002173A patent/JP2004163968A/ja active Pending
- 2004-09-09 JP JP2004261890A patent/JP3717078B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI580934B (zh) * | 2011-09-22 | 2017-05-01 | 半導體能源研究所股份有限公司 | 光檢測器及其驅動方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH09197433A (ja) | 1997-07-31 |
JP2004163968A (ja) | 2004-06-10 |
JP3625598B2 (ja) | 2005-03-02 |
JP2005010806A (ja) | 2005-01-13 |
US5731856A (en) | 1998-03-24 |
JP3717078B2 (ja) | 2005-11-16 |
JP2004163969A (ja) | 2004-06-10 |
TWI257012B (en) | 2006-06-21 |
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