KR100889796B1 - 비정질 산화물을 사용한 전계 효과 트랜지스터 - Google Patents

비정질 산화물을 사용한 전계 효과 트랜지스터 Download PDF

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KR100889796B1
KR100889796B1 KR1020077012790A KR20077012790A KR100889796B1 KR 100889796 B1 KR100889796 B1 KR 100889796B1 KR 1020077012790 A KR1020077012790 A KR 1020077012790A KR 20077012790 A KR20077012790 A KR 20077012790A KR 100889796 B1 KR100889796 B1 KR 100889796B1
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layer
film
amorphous oxide
amorphous
gate
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KR20070085828A (ko
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마사후미 사노
카쓰미 나카가와
히데오 호소노
토시오 카미야
켄지 노무라
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캐논 가부시끼가이샤
고쿠리츠다이가쿠호진 토쿄고교 다이가꾸
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
KR1020077012790A 2004-11-10 2005-11-09 비정질 산화물을 사용한 전계 효과 트랜지스터 Expired - Lifetime KR100889796B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004326683 2004-11-10
JPJP-P-2004-00326683 2004-11-10
PCT/JP2005/020982 WO2006051995A1 (en) 2004-11-10 2005-11-09 Field effect transistor employing an amorphous oxide

Related Child Applications (1)

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KR1020087026655A Division KR100911698B1 (ko) 2004-11-10 2005-11-09 비정질 산화물을 사용한 전계 효과 트랜지스터

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KR20070085828A KR20070085828A (ko) 2007-08-27
KR100889796B1 true KR100889796B1 (ko) 2009-03-20

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KR1020077012790A Expired - Lifetime KR100889796B1 (ko) 2004-11-10 2005-11-09 비정질 산화물을 사용한 전계 효과 트랜지스터
KR1020087026655A Expired - Lifetime KR100911698B1 (ko) 2004-11-10 2005-11-09 비정질 산화물을 사용한 전계 효과 트랜지스터

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US (2) US7868326B2 (enExample)
EP (1) EP1815530B1 (enExample)
JP (1) JP5118812B2 (enExample)
KR (2) KR100889796B1 (enExample)
CN (1) CN101057338B (enExample)
AU (1) AU2005302964B2 (enExample)
BR (1) BRPI0517560B8 (enExample)
CA (1) CA2585071A1 (enExample)
RU (1) RU2358355C2 (enExample)
WO (1) WO2006051995A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8890139B2 (en) 2011-10-19 2014-11-18 Samsung Display Co., Ltd. Solution composition for passivation layer, thin film transistor array panel, and manufacturing method for thin film transistor array panel
US8912027B2 (en) 2012-07-24 2014-12-16 Samsung Display Co., Ltd Display device and method of manufacturing the same

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