JP5724157B2 - 酸化物半導体ターゲット及びそれを用いた酸化物半導体装置の製造方法 - Google Patents
酸化物半導体ターゲット及びそれを用いた酸化物半導体装置の製造方法 Download PDFInfo
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- JP5724157B2 JP5724157B2 JP2009096937A JP2009096937A JP5724157B2 JP 5724157 B2 JP5724157 B2 JP 5724157B2 JP 2009096937 A JP2009096937 A JP 2009096937A JP 2009096937 A JP2009096937 A JP 2009096937A JP 5724157 B2 JP5724157 B2 JP 5724157B2
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- 239000004065 semiconductor Substances 0.000 title claims description 114
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 239000010408 film Substances 0.000 claims description 104
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- 239000011701 zinc Substances 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 63
- 239000000203 mixture Substances 0.000 claims description 48
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 38
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- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 21
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- 238000001552 radio frequency sputter deposition Methods 0.000 claims description 11
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- 229910001887 tin oxide Inorganic materials 0.000 claims description 11
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- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims 5
- 230000005669 field effect Effects 0.000 claims 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
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- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 2
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- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
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- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Description
本願の酸化物半導体ターゲットには、不純物の添加を行わないZTO(亜鉛錫複合酸化物)を用いる。原料となる金属亜鉛、錫ともクラーク数は0.004%で、比較的多量に地殻中に存在し、現状コスト、供給量的に問題ない金属材料といえる。
50…パッシベーション層、60…支持基板、61…ゲート電極、62…ゲート絶縁膜、63…ZTO半導体チャネル層、64…ソース・ドレイン電極、65…抵抗膜、66…配線層(ドレイン電極側)、67…層間絶縁膜層、68…配線層(ソース側)、70…支持基板、71…データ線駆動回路、72…ゲート線駆動回路、73…ゲート線、74…データ線、75…ドレイン電極(ディスプレイの画素電極相当)、76…ZTO薄膜トランジスタ、77…容量値参照線、78…強誘電体ゲート絶縁膜を用いたZTO薄膜トランジスタ、80…容量層(蓄電層)、81…強誘電体ゲート絶縁膜、82…層間絶縁膜層(平坦化膜層)。
Claims (16)
- 薄膜酸化物半導体膜を形成するための酸化物半導体ターゲットであって、酸化亜鉛と酸化錫(IVまたはVI)を主成分とする酸化物焼結体であり、且つ、亜鉛(Zn)と錫(Sn)の組成(Zn/(Zn+Sn))が0.6〜0.8であり、且つその焼結体の電気抵抗率が1Ωcm以上であり、
前記酸化物焼結体は、ホウ素、アルミニウム、ガリウム、インジウム、タリウム、窒素、リン、ヒ素、アンチモン、ビスマスの合計濃度が100ppm以下であることを特徴とする酸化物半導体ターゲット。 - 請求項1記載の酸化物半導体ターゲットにおいて、
前記組成(Zn/(Zn+Sn))が0.65〜0.7であることを特徴とする酸化物半導体ターゲット。 - 請求項1乃至2のいずれか1項に記載の酸化物半導体ターゲットにおいて、
前記薄膜酸化物半導体膜は、薄膜トランジスタやヘテロ構造電界効果トランジスタのチャネル層として用いられることを特徴とする酸化物半導体ターゲット。 - 薄膜酸化物半導体膜を形成するための酸化物半導体ターゲットであって、酸化亜鉛と酸化錫(IVまたはVI)を主成分とする酸化物焼結体であり、且つ、亜鉛(Zn)と錫(Sn)の組成(Zn/(Zn+Sn))が0.6〜0.8であり、且つその焼結体の電気抵抗率が1Ωcm以上であることを特徴とする酸化物半導体ターゲットを用い、高周波を用いたスパッタリング方法によりチャネル層となる酸化物半導体膜を成膜し、
前記高周波を用いたスパッタリング方法に用いられるスパッタリングガスは、10%以上の酸素ガスを含むことを特徴とする酸化物半導体装置の製造方法。 - 請求項4記載の酸化物半導体装置の製造方法において、
前記酸化物半導体膜は、1×10−1Ωcm以上の抵抗率となることを特徴とする酸化物半導体装置の製造方法。 - 請求項4項記載の酸化物半導体装置の製造方法において、
前記高周波を用いたスパッタリング方法は、RFスパッタ、RFマグネトロンスパッタ、或いは電子サイクロトロン共鳴スパッタであることを特徴とする酸化物半導体装置の製造方法。 - 請求項4に記載の酸化物半導体装置の製造方法において、
前記スパッタリングガスは、アルゴンが主成分であることを特徴とする酸化物半導体装置の製造方法。 - 請求項4記載の酸化物半導体装置の製造方法において、
前記高周波を用いたスパッタリング方法に代えて、ビームを用いた成膜方法により成膜を行うことを特徴とする酸化物半導体装置の製造方法。 - 請求項8記載の酸化物半導体装置の製造方法において、
前記成膜方法は、酸素存在雰囲気下での電子ビーム蒸着、イオンプレーティング、またはパルスレーザー蒸着であることを特徴とする酸化物半導体装置の製造方法。 - 請求項4乃至9のいずれか1項に記載の酸化物半導体装置の製造方法において、
前記酸化物半導体膜は、有機酸を主成分とするエッチング液、または無機酸を主成分とするエッチング液によりエッチングされる工程を含むことを特徴とする酸化物半導体装置の製造方法。 - 請求項10記載の酸化物半導体装置の製造方法において、
前記有機酸はシュウ酸あるいは酢酸であり、前記無機酸はハロゲン系あるいは硝酸系であることを特徴とする酸化物半導体装置の製造方法。 - 薄膜酸化物半導体膜を形成するための酸化物半導体ターゲットであって、酸化亜鉛と酸化錫(IVまたはVI)を主成分とする酸化物焼結体であり、且つ、亜鉛(Zn)と錫(Sn)の組成(Zn/(Zn+Sn))が0.6〜0.8であり、且つその焼結体の電気抵抗率が1Ωcm以上であることを特徴とする酸化物半導体ターゲットを用い、
高周波を用いたスパッタリング方法によりチャネル層となる酸化物半導体膜を成膜し、
前記酸化物半導体膜は、ドライエッチングにより加工される工程を有し、
前記ドライエッチングで用いるエッチングガスは、ハロゲン系ガスであり、かつフッ素を含有することを特徴とする酸化物半導体装置の製造方法。 - 亜鉛(Zn)と錫(Sn)の組成(Zn/(Zn+Sn))が0.6〜0.8であり、
電気抵抗率が1Ωcm以上であり、
ホウ素、アルミニウム、ガリウム、インジウム、タリウム、窒素、リン、ヒ素、アンチモンおよびビスマスの合計濃度が100ppm以下であり、
酸化亜鉛と酸化錫を主成分とする酸化物焼結体であることを特徴とする薄膜酸化物半導体膜成膜用の酸化物半導体ターゲット。 - 薄膜酸化物半導体膜のチャネル層を10%以上の酸素ガスを含んだスパッタリングガスによって形成するための酸化物半導体ターゲットであって、酸化亜鉛と酸化錫(IVまたはVI)を主成分とする酸化物焼結体であり、且つ、亜鉛(Zn)と錫(Sn)の組成(Zn/(Zn+Sn))が0.6〜0.8であり、且つその焼結体の電気抵抗率が1Ωcm以上であり、
前記酸化物焼結体は、ホウ素、アルミニウム、ガリウム、インジウム、タリウム、窒素、リン、ヒ素、アンチモン、ビスマスの合計濃度が100ppm以下であることを特徴とする酸化物半導体ターゲット。 - 請求項14記載の酸化物半導体ターゲットにおいて、
前記組成(Zn/(Zn+Sn))が0.65〜0.7であることを特徴とする酸化物半導体ターゲット。 - 請求項14又は15に記載の酸化物半導体ターゲットにおいて、
前記薄膜酸化物半導体膜は、薄膜トランジスタやヘテロ構造電界効果トランジスタのチャネル層として用いられることを特徴とする酸化物半導体ターゲット。
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