WO2008139860A1 - 半導体薄膜、半導体薄膜の製造方法、および、半導体素子 - Google Patents

半導体薄膜、半導体薄膜の製造方法、および、半導体素子 Download PDF

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WO2008139860A1
WO2008139860A1 PCT/JP2008/057804 JP2008057804W WO2008139860A1 WO 2008139860 A1 WO2008139860 A1 WO 2008139860A1 JP 2008057804 W JP2008057804 W JP 2008057804W WO 2008139860 A1 WO2008139860 A1 WO 2008139860A1
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thin film
semiconductor thin
semiconductor
amorphous oxide
exposed
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PCT/JP2008/057804
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English (en)
French (fr)
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Kazuyoshi Inoue
Futoshi Utsuno
Katsunori Honda
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Idemitsu Kosan Co., Ltd.
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Priority to CN200880015165A priority Critical patent/CN101679036A/zh
Priority to JP2009514069A priority patent/JPWO2008139860A1/ja
Priority to US12/598,980 priority patent/US9249032B2/en
Publication of WO2008139860A1 publication Critical patent/WO2008139860A1/ja

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Abstract

　酸素を含むガスを高周波で励起して発生した酸素プラズマに非晶質酸化物を含有する非晶質酸化物薄膜を暴露する。酸素プラズマの発生条件は、印加周波数が１ｋＨｚ以上３００ＭＨｚ以下、圧力が５Ｐａ以上であることが好ましい。また、スパッタリング法、イオンプレーティング法、真空蒸着法、ゾルゲル法、微粒子の塗布法のいずれかにより非晶質酸化物薄膜を暴露することが好ましい。
PCT/JP2008/057804 2007-05-07 2008-04-23 半導体薄膜、半導体薄膜の製造方法、および、半導体素子 WO2008139860A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200880015165A CN101679036A (zh) 2007-05-07 2008-04-23 半导体薄膜、半导体薄膜的制备方法和半导体元件
JP2009514069A JPWO2008139860A1 (ja) 2007-05-07 2008-04-23 半導体薄膜、半導体薄膜の製造方法、および、半導体素子
US12/598,980 US9249032B2 (en) 2007-05-07 2008-04-23 Semiconductor thin film, semiconductor thin film manufacturing method and semiconductor element

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007122513 2007-05-07
JP2007-122513 2007-05-07
JP2007127132 2007-05-11
JP2007-127132 2007-05-11

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JP (1) JPWO2008139860A1 (ja)
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Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009144238A (ja) * 2007-12-14 2009-07-02 Samsung Corning Precision Glass Co Ltd 酸化インジウムスズターゲットおよびこの製造方法、酸化インジウムスズ透明導電膜およびこの製造方法
JP2010123836A (ja) * 2008-11-21 2010-06-03 Idemitsu Kosan Co Ltd Ｉｎ−Ｓｎ−Ｌｎ系半導体膜を有する薄膜トランジスタ
WO2010079581A1 (ja) * 2009-01-08 2010-07-15 出光興産株式会社 薄膜トランジスタ及びその製造方法
JP2010248547A (ja) * 2009-04-13 2010-11-04 Hitachi Metals Ltd 酸化物半導体ターゲット及びそれを用いた酸化物半導体装置の製造方法
WO2011061922A1 (ja) * 2009-11-19 2011-05-26 株式会社アルバック 透明導電膜の製造方法、透明導電膜の製造装置、スパッタリングターゲット及び透明導電膜
JP2011249788A (ja) * 2010-04-28 2011-12-08 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
WO2013005400A1 (ja) * 2011-07-06 2013-01-10 出光興産株式会社 スパッタリングターゲット
US20130082218A1 (en) * 2010-05-27 2013-04-04 Kazuaki Ebata Sintered oxide material, target comprising same, and oxide semiconductor thin film
JP2013084735A (ja) * 2011-10-07 2013-05-09 Semiconductor Energy Lab Co Ltd 酸化物半導体膜及び半導体装置
JP2015122539A (ja) * 2008-09-01 2015-07-02 株式会社半導体エネルギー研究所 酸化物半導体膜、及び半導体装置
JP2015165311A (ja) * 2010-02-12 2015-09-17 株式会社半導体エネルギー研究所 表示装置
US9249032B2 (en) 2007-05-07 2016-02-02 Idemitsu Kosan Co., Ltd. Semiconductor thin film, semiconductor thin film manufacturing method and semiconductor element
JP2016103543A (ja) * 2014-11-27 2016-06-02 株式会社Ｊｏｌｅｄ 薄膜トランジスタ基板の製造方法
JP2017028304A (ja) * 2009-10-16 2017-02-02 株式会社半導体エネルギー研究所 表示装置
JP2017096959A (ja) * 2010-08-27 2017-06-01 株式会社半導体エネルギー研究所 酸化物半導体膜の評価方法
CN106868451A (zh) * 2017-03-28 2017-06-20 泉州市中知信息科技有限公司 一种具有vo2镀膜的智能节能玻璃的镀膜工艺
JP2019087758A (ja) * 2010-12-28 2019-06-06 株式会社半導体エネルギー研究所 トランジスタ

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