WO2008146575A1 - 化合物系薄膜及びその形成方法、並びにその薄膜を用いた電子装置 - Google Patents

化合物系薄膜及びその形成方法、並びにその薄膜を用いた電子装置 Download PDF

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WO2008146575A1
WO2008146575A1 PCT/JP2008/058405 JP2008058405W WO2008146575A1 WO 2008146575 A1 WO2008146575 A1 WO 2008146575A1 JP 2008058405 W JP2008058405 W JP 2008058405W WO 2008146575 A1 WO2008146575 A1 WO 2008146575A1
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Prior art keywords
thin film
compound
type thin
electronic apparatus
material gas
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PCT/JP2008/058405
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English (en)
French (fr)
Inventor
Tadahiro Ohmi
Hirokazu Asahara
Atsutoshi Inokuchi
Kohei Watanuki
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National University Corporation Tohoku University
Rohm Co., Ltd.
Tokyo Electron Limited
Ube Industries, Ltd.
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Application filed by National University Corporation Tohoku University, Rohm Co., Ltd., Tokyo Electron Limited, Ube Industries, Ltd. filed Critical National University Corporation Tohoku University
Priority to EP08752310A priority Critical patent/EP2151853A1/en
Priority to US12/601,684 priority patent/US8188468B2/en
Priority to JP2009516233A priority patent/JP5697333B2/ja
Priority to CN2008800173889A priority patent/CN101681817B/zh
Publication of WO2008146575A1 publication Critical patent/WO2008146575A1/ja

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Abstract

　マイクロ波によって励起された低電子温度高密度プラズマ中に、有機金属系材料ガスを供給することによって、成膜対象物である基板上に、化合物の薄膜を形成する。この場合、有機金属系材料ガスの供給系は、有機金属系材料ガスの蒸気圧と温度との関係を利用して、温度制御されている。
PCT/JP2008/058405 2007-05-25 2008-05-02 化合物系薄膜及びその形成方法、並びにその薄膜を用いた電子装置 WO2008146575A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP08752310A EP2151853A1 (en) 2007-05-25 2008-05-02 Compound-type thin film, method for compound-type thin film formation, and electronic apparatus using the thin film
US12/601,684 US8188468B2 (en) 2007-05-25 2008-05-02 Compound-type thin film, method of forming the same, and electronic device using the same
JP2009516233A JP5697333B2 (ja) 2007-05-25 2008-05-02 化合物系薄膜及びその形成方法、並びにその薄膜を用いた電子装置
CN2008800173889A CN101681817B (zh) 2007-05-25 2008-05-02 化合物系薄膜及其形成方法、以及使用该薄膜的电子装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007139412 2007-05-25
JP2007-139412 2007-05-25

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WO2008146575A1 true WO2008146575A1 (ja) 2008-12-04

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US (1) US8188468B2 (ja)
EP (1) EP2151853A1 (ja)
JP (1) JP5697333B2 (ja)
KR (1) KR20100017554A (ja)
CN (1) CN101681817B (ja)
TW (1) TW200915393A (ja)
WO (1) WO2008146575A1 (ja)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011246787A (ja) * 2010-05-28 2011-12-08 Fujifilm Corp 導電性酸化亜鉛膜および導電性酸化亜鉛膜を備えた光電変換素子
US20120161100A1 (en) * 2010-12-27 2012-06-28 Hon Hai Precision Industry Co., Ltd. Light emitting diode and making method thereof
CN102575341A (zh) * 2009-10-09 2012-07-11 国立大学法人东北大学 薄膜及其形成方法以及具备该薄膜的半导体发光元件
WO2012137949A1 (ja) * 2011-04-08 2012-10-11 東京エレクトロン株式会社 窒化物半導体の製造方法、窒化物半導体、およびｉｉｉ－ｖ族窒化物の成膜方法
JP2013102244A (ja) * 2013-03-06 2013-05-23 Tohoku Univ 光電変換部材
JP2013251582A (ja) * 2013-09-17 2013-12-12 Tohoku Univ 電子装置
JP2016086178A (ja) * 2009-07-17 2016-05-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
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