WO2008085604A3 - Reel-to-reel reaction of precursor film to form solar cell absorber - Google Patents

Reel-to-reel reaction of precursor film to form solar cell absorber Download PDF

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Publication number
WO2008085604A3
WO2008085604A3 PCT/US2007/084432 US2007084432W WO2008085604A3 WO 2008085604 A3 WO2008085604 A3 WO 2008085604A3 US 2007084432 W US2007084432 W US 2007084432W WO 2008085604 A3 WO2008085604 A3 WO 2008085604A3
Authority
WO
WIPO (PCT)
Prior art keywords
reel
solar cell
chamber
continuous flexible
reaction
Prior art date
Application number
PCT/US2007/084432
Other languages
French (fr)
Other versions
WO2008085604B1 (en
WO2008085604A2 (en
Inventor
Bulent M Basol
Original Assignee
Solopower Inc
Bulent M Basol
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solopower Inc, Bulent M Basol filed Critical Solopower Inc
Priority to JP2009536531A priority Critical patent/JP2010509779A/en
Priority to EP07872342A priority patent/EP2102898A4/en
Priority to KR1020097012027A priority patent/KR20090110293A/en
Priority to CN2007800464593A priority patent/CN101578707B/en
Publication of WO2008085604A2 publication Critical patent/WO2008085604A2/en
Publication of WO2008085604A3 publication Critical patent/WO2008085604A3/en
Publication of WO2008085604B1 publication Critical patent/WO2008085604B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Abstract

A roll-to-roll rapid thermal processing (RTP) tool with multiple chambers for forming a solar cell absorber by reacting a precursor layer on a continuous flexible workpiece. The RTP tool includes an elongated housing having a heating chamber with a predetermined temperature profile, a supply chamber and a receiving chamber. The heating chamber includes a small process gap in which the precursor layer is reacted with a Group VIA material to form an absorber layer. The continuous flexible workpiece is unrolled and advanced from the supply chamber into the heating chamber, and the processed continuous flexible workpiece is taken up and rolled in the receiving chamber.
PCT/US2007/084432 2006-11-10 2007-11-12 Reel-to-reel reaction of precursor film to form solar cell absorber WO2008085604A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009536531A JP2010509779A (en) 2006-11-10 2007-11-12 Open reel reaction of precursor film to form solar cell absorber
EP07872342A EP2102898A4 (en) 2006-11-10 2007-11-12 Reel-to-reel reaction of precursor film to form solar cell absorber
KR1020097012027A KR20090110293A (en) 2006-11-10 2007-11-12 Reel-to-reel reaction of precursor film to form solar cell absorber
CN2007800464593A CN101578707B (en) 2006-11-10 2007-11-12 Reel-to-reel reaction of precursor film to form solar cell absorber

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US86538506P 2006-11-10 2006-11-10
US60/865,385 2006-11-10

Publications (3)

Publication Number Publication Date
WO2008085604A2 WO2008085604A2 (en) 2008-07-17
WO2008085604A3 true WO2008085604A3 (en) 2008-10-16
WO2008085604B1 WO2008085604B1 (en) 2008-12-24

Family

ID=39609232

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/084432 WO2008085604A2 (en) 2006-11-10 2007-11-12 Reel-to-reel reaction of precursor film to form solar cell absorber

Country Status (6)

Country Link
EP (1) EP2102898A4 (en)
JP (1) JP2010509779A (en)
KR (1) KR20090110293A (en)
CN (1) CN101578707B (en)
TW (1) TW200832726A (en)
WO (1) WO2008085604A2 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2008297124A1 (en) * 2007-09-11 2009-03-19 Centrotherm Photovoltaics Ag Method and arrangement for providing chalcogens
US8323408B2 (en) 2007-12-10 2012-12-04 Solopower, Inc. Methods and apparatus to provide group VIA materials to reactors for group IBIIIAVIA film formation
US8163090B2 (en) * 2007-12-10 2012-04-24 Solopower, Inc. Methods structures and apparatus to provide group VIA and IA materials for solar cell absorber formation
CN102308174B (en) * 2008-11-28 2015-08-05 福尔克尔·普洛波斯特 Produce the method for semiconductor layer and the coated substrate particularly planar substrate by elemental selenium and/or elemental sulfur process
DE102009009022A1 (en) * 2009-02-16 2010-08-26 Centrotherm Photovoltaics Ag Method and device for coating flat substrates with chalcogens
DE102009011496A1 (en) * 2009-03-06 2010-09-16 Centrotherm Photovoltaics Ag Process and device for the thermal conversion of metallic precursor layers into semiconducting layers with chalcogen recovery
TWI509107B (en) * 2009-03-06 2015-11-21 Centrotherm Photovoltaics Ag Verfahren und vorrichtung zur thermischen umsetzung metallischer precusorschichten in halbleitende schichten mit chalkogenquelle
DE102009049570B3 (en) 2009-10-15 2011-02-17 Fhr Anlagenbau Gmbh Arrangement for gas separation and its use
TWI398013B (en) * 2009-12-18 2013-06-01 Jenn Feng New Energy Co Ltd Method and system for forming non-vacuum copper indium gallium sulphide selenium absorption layer and cadmium sulfide buffer layer
WO2011132915A2 (en) * 2010-04-19 2011-10-27 한국생산기술연구원 Method for manufacturing solar cell
KR101522128B1 (en) * 2011-03-10 2015-05-20 쌩-고벵 글래스 프랑스 Method for producing the pentanary compound semiconductor cztsse, and thin-film solar cell
JP2012222157A (en) * 2011-04-08 2012-11-12 Hitachi Kokusai Electric Inc Substrate processing apparatus and method of manufacturing solar cell
US9054264B2 (en) * 2012-02-29 2015-06-09 Alliance For Sustainable Energy, Llc Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium
CN103361603A (en) * 2012-03-29 2013-10-23 常熟卓辉光电科技有限公司 Vacuum evaporation equipment of semiconductor film material and preparation method of OLED (Organic Light Emitting Diode) conductive layer
DE102012205378A1 (en) * 2012-04-02 2013-10-02 Robert Bosch Gmbh Process for the production of thin-film solar modules and thin-film solar modules obtainable by this process
KR101461315B1 (en) * 2012-06-19 2014-11-12 가부시키가이샤 스크린 홀딩스 Heat treatment apparatus and heat treatment method
KR101698281B1 (en) 2012-07-09 2017-01-19 쌩-고벵 글래스 프랑스 System and method for processing substrates
KR101373314B1 (en) 2012-12-31 2014-03-12 (주)피앤테크 Apparatus for exhaust condensing of doping process tube for solar cell wafer
DE102014116696B4 (en) * 2014-11-14 2016-10-20 Von Ardenne Gmbh Vacuum chamber and method for operating a vacuum processing plant

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5571749A (en) * 1993-12-28 1996-11-05 Canon Kabushiki Kaisha Method and apparatus for forming deposited film
US5578503A (en) * 1992-09-22 1996-11-26 Siemens Aktiengesellschaft Rapid process for producing a chalcopyrite semiconductor on a substrate
US7091136B2 (en) * 2001-04-16 2006-08-15 Basol Bulent M Method of forming semiconductor compound film for fabrication of electronic device and film produced by same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4723507A (en) * 1986-01-16 1988-02-09 Energy Conversion Devices, Inc. Isolation passageway including annular region
JPH02148715A (en) * 1988-11-29 1990-06-07 Canon Inc Apparatus for forming semiconductor device continuously
JP2819056B2 (en) * 1990-07-24 1998-10-30 キヤノン株式会社 Method and apparatus for forming deposited film
JP3402637B2 (en) * 1992-12-28 2003-05-06 キヤノン株式会社 Method of manufacturing solar cell, manufacturing apparatus thereof, and method of manufacturing long sheet substrate
JP3332700B2 (en) * 1995-12-22 2002-10-07 キヤノン株式会社 Method and apparatus for forming deposited film
JPH11135811A (en) * 1997-10-28 1999-05-21 Yazaki Corp Cis-based solar cell module and its manufacture
US20030164225A1 (en) * 1998-04-20 2003-09-04 Tadashi Sawayama Processing apparatus, exhaust processing process and plasma processing
WO2004032189A2 (en) * 2002-09-30 2004-04-15 Miasolé Manufacturing apparatus and method for large-scale production of thin-film solar cells

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578503A (en) * 1992-09-22 1996-11-26 Siemens Aktiengesellschaft Rapid process for producing a chalcopyrite semiconductor on a substrate
US5571749A (en) * 1993-12-28 1996-11-05 Canon Kabushiki Kaisha Method and apparatus for forming deposited film
US7091136B2 (en) * 2001-04-16 2006-08-15 Basol Bulent M Method of forming semiconductor compound film for fabrication of electronic device and film produced by same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2102898A4 *

Also Published As

Publication number Publication date
JP2010509779A (en) 2010-03-25
EP2102898A2 (en) 2009-09-23
WO2008085604B1 (en) 2008-12-24
CN101578707B (en) 2012-08-22
KR20090110293A (en) 2009-10-21
EP2102898A4 (en) 2011-06-29
WO2008085604A2 (en) 2008-07-17
TW200832726A (en) 2008-08-01
CN101578707A (en) 2009-11-11

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