JP5697333B2 - 化合物系薄膜及びその形成方法、並びにその薄膜を用いた電子装置 - Google Patents
化合物系薄膜及びその形成方法、並びにその薄膜を用いた電子装置 Download PDFInfo
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- JP5697333B2 JP5697333B2 JP2009516233A JP2009516233A JP5697333B2 JP 5697333 B2 JP5697333 B2 JP 5697333B2 JP 2009516233 A JP2009516233 A JP 2009516233A JP 2009516233 A JP2009516233 A JP 2009516233A JP 5697333 B2 JP5697333 B2 JP 5697333B2
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- thin film
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Description
本発明によれば、マイクロ波励起高密度プラズマ発生装置を用いて発生させたプラズマ中に有機金属系材料を含むガスを供給し、II-VI族系化合物、III-V族系化合物、IV族系化合物の薄膜を成膜対象物に形成する薄膜形成方法が得られる。
第1の態様において、成膜対象物にバイアス電位を印加してプラズマ中のイオンを膜表面に照射する薄膜形成方法。
第2の態様において、印加するバイアス電位を-0.1Vから-30Vとする薄膜形成方法。
第2の態様において、印加するバイアス電位を-30V以下(絶対値は30以上)とする薄膜形成方法。
第2の態様において、印加するバイアス電位を、バイアス電位を印加しない場合に比べて、形成した薄膜のX線回折測定の半値幅が小さくなるような電位とする薄膜形成方法。
第2の態様において、印加するバイアス電位を、バイアス電位を印加しない場合に比べて、形成した薄膜の移動度が高くなるような電位とする薄膜形成方法。
第2の態様において、印加するバイアス電位を、バイアス電位を印加しない場合に比べて、形成した薄膜に含まれる不純物濃度が低くなるような電位とする薄膜形成方法。
第2の態様において、印加するバイアス電位を、バイアス電位を印加しない場合に比べて、形成した薄膜のフォトルミネッセンス特性が改善されるような電位とする薄膜形成方法。
第8の態様において、印加するバイアス電位は、バイアス電位を印加しない場合に比べて、形成した薄膜の、材料固有のバンドギャップのバンド端発光のフォトルミネッセンス輝度が大きくなり、かつそれ以外の発光の輝度が小さくなるような電位とする薄膜形成方法。
第2の態様において、印加するバイアス電位を、バイアス電位を印加しない場合に比べて、形成した薄膜の膜構造の平坦性が良くなるような電位とする薄膜形成方法。
第1乃至第10の態様の内のいずれか一つにおいて、前記有機金属系材料ガスとして第II族、第III族、第IV族、第V族、第VI族の元素の少なくとも一つを含む有機金属ガスを使用する薄膜形成方法。
第1乃至第10の態様の内のいずれか一つに記載の薄膜形成方法を用いて形成したII-VI族系化合物、III-V族系化合物、またはIV族系化合物の薄膜。
第12の態様に記載の薄膜であって、導電性を有する薄膜。
第12又は第13の態様に記載の薄膜であって、透明である薄膜。
第12乃至第14の態様の内のいずれか一つに記載の薄膜であって、単結晶性である薄膜。
第12乃至第14の態様の内のいずれか一つに記載の薄膜であって、多結晶である薄膜。
第12乃至第14の態様の内のいずれか一つに記載の薄膜であって、アモルファスである薄膜。
第15乃至第17の態様の内のいずれか一つに記載の薄膜であって、ガラス基板上に形成された薄膜。
第16又は第17の態様に記載の薄膜であって、樹脂基板上に形成された薄膜。
第15乃至第17の態様の内のいずれか一つに記載の薄膜であって、500℃以上の温度に耐えうる基板を用いて形成された薄膜。
第12乃至第20の態様の内のいずれか一つに記載の薄膜であって、構成元素にインジウムを含まない薄膜。
第12乃至第21の態様の内のいずれか一つに記載の薄膜を備えることを特徴とする半導体発光素子。
第12乃至第21の態様の内のいずれか一つに記載の薄膜を備えることを特徴とする太陽電池。
第12乃至第21の態様の内のいずれか一つに記載の透明で導電膜の薄膜を備えることを特徴とする電子装置。
第12乃至第21の態様の内のいずれか一つに記載の薄膜をチャネル領域として用いたことを特徴とする半導体装置。
第19又は第21の態様に記載の薄膜を備えて耐熱温度が200℃以下の材料の樹脂基板等を用いたことを特徴とする電子装置。
マイクロ波励起高密度プラズマ発生装置と、当該マイクロ波励起高密度プラズマ発生装置中に発生させたプラズマ中に、有機金属系材料ガスを含むガスを供給する供給系を有し、前記供給系は、前記有機金属系材料ガスの蒸気圧と温度との関係を利用して、温度制御されていることを特徴とする薄膜形成装置。
第27の態様において、成膜対象物にバイアス電位を印加してプラズマ中のイオンを膜表面に照射する薄膜形成装置。
Claims (19)
- マイクロ波励起高密度プラズマ発生装置を用いて発生させたプラズマ中に少なくともZnを含む有機金属系材料ガスと、Ar、kr、Xe、Heのいずれか1つを含むプラズマ励起用ガスと、O2による反応ガスを含むガスを供給し、ZnO薄膜を成膜対象物に形成する方法であって、
成膜対象物に2〜200MHzの周波数範囲のRFバイアス電位を印加してプラズマ中のイオンを膜表面に照射し、
成膜条件として、前記マイクロ波のパワー600W以上、前記反応ガスの流量50〜1000sccmをそれぞれ設定し、
前記RFバイアス電位を−0.1V以下とすることを特徴とする薄膜形成方法。 - 請求項1において、印加するバイアス電位を、バイアス電位を印加しない場合に比べて、形成した薄膜のX線回折測定の半値幅が小さくなるような電位としたことを特徴とする薄膜形成方法。
- 請求項1において、印加するバイアス電位を、バイアス電位を印加しない場合に比べて、形成した薄膜の移動度が高くなるような電位としたことを特徴とする薄膜形成方法。
- 請求項1において、印加するバイアス電位を、バイアス電位を印加しない場合に比べて、形成した薄膜に含まれる不純物濃度が低くなるような電位としたことを特徴とする薄膜形成方法。
- 請求項1において、印加するバイアス電位を、バイアス電位を印加しない場合に比べて、形成した薄膜のフォトルミネッセンス特性が改善されるような電位としたことを特徴とする薄膜形成方法。
- 請求項5において、印加するバイアス電位は、バイアス電位を印加しない場合に比べて、形成した薄膜の、材料固有のバンドギャップのバンド端発光のフォトルミネッセンス輝度が大きくなり、かつそれ以外の発光の輝度が小さくなるような電位としたことを特徴とする薄膜形成方法。
- 請求項1において、印加するバイアス電位を、バイアス電位を印加しない場合に比べて、形成した薄膜の膜構造の平坦性が良くなるような電位としたことを特徴とする薄膜形成方法。
- 請求項1に記載の薄膜形成方法で形成された薄膜であって、単結晶性であることを特徴とする薄膜。
- 請求項1に記載の薄膜形成方法で形成された薄膜であって、多結晶であることを特徴とする薄膜。
- 請求項1に記載の薄膜形成方法で形成された薄膜であって、アモルファスであることを特徴とする薄膜。
- 請求項8乃至10の内のいずれか一つに記載の薄膜であって、ガラス基板上に形成されたことを特徴とする薄膜。
- 請求項9又は10に記載の薄膜であって、樹脂基板上に形成されたことを特徴とする薄膜。
- 請求項8乃至10の内のいずれか一つに記載の薄膜であって、耐熱温度が500℃以上の基板を用いて形成されたことを特徴とする薄膜。
- 請求項8乃至13の内のいずれか一つに記載の薄膜であって、構成元素にインジウムを含まないことを特徴とする薄膜。
- 請求項8乃至14の内のいずれか一つに記載の薄膜を備えることを特徴とする半導体発光素子。
- 請求項8乃至14の内のいずれか一つに記載の薄膜を備えることを特徴とする太陽電池。
- 請求項8乃至14の内のいずれか一つに記載の薄膜であって、透明で導電性の薄膜を備えることを特徴とする電子装置。
- 請求項8乃至14の内のいずれか一つに記載の薄膜をチャネル領域として用いたことを特徴とする半導体装置。
- 請求項12又は14に記載の薄膜を備えて耐熱温度が200℃以下の材料の樹脂基板を用いたことを特徴とする電子装置。
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WO2011007682A1 (en) | 2009-07-17 | 2011-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US8592810B2 (en) | 2009-10-09 | 2013-11-26 | National University Corporation Tohoku University | Thin film, method of forming the same, and semiconductor light-emitting element comprising the thin film |
US8664658B2 (en) * | 2010-05-14 | 2014-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2011246787A (ja) * | 2010-05-28 | 2011-12-08 | Fujifilm Corp | 導電性酸化亜鉛膜および導電性酸化亜鉛膜を備えた光電変換素子 |
CN103201828B (zh) * | 2010-11-05 | 2016-06-29 | 夏普株式会社 | 氧化退火处理装置和使用氧化退火处理的薄膜晶体管的制造方法 |
TWI540754B (zh) * | 2010-12-27 | 2016-07-01 | 鴻海精密工業股份有限公司 | 發光二極體及其形成方法 |
CN102544279B (zh) * | 2010-12-28 | 2016-11-09 | 鸿富锦精密工业(深圳)有限公司 | 发光二极管及其形成方法 |
JPWO2012137949A1 (ja) * | 2011-04-08 | 2014-07-28 | 東京エレクトロン株式会社 | 窒化物半導体の製造方法、窒化物半導体、およびiii−v族窒化物の成膜方法 |
TW201415654A (zh) * | 2012-10-05 | 2014-04-16 | Inst Nuclear Energy Res Atomic Energy Council | 薄膜太陽能電池吸收層之製造方法 |
JP5446022B2 (ja) * | 2013-03-06 | 2014-03-19 | 国立大学法人東北大学 | 光電変換部材 |
JP2013251582A (ja) * | 2013-09-17 | 2013-12-12 | Tohoku Univ | 電子装置 |
WO2015174517A1 (ja) * | 2014-05-16 | 2015-11-19 | 国立大学法人名古屋工業大学 | p型酸化亜鉛膜の製造方法 |
JP6606403B2 (ja) * | 2015-11-05 | 2019-11-13 | 株式会社ニューフレアテクノロジー | シャワープレート、気相成長装置および気相成長方法 |
TWI639178B (zh) | 2017-02-03 | 2018-10-21 | 真環科技有限公司 | 電漿輔助原子層鍍膜裝置 |
KR102520541B1 (ko) | 2018-02-14 | 2023-04-10 | 엘지디스플레이 주식회사 | 산화물 박막의 제조 장치와 제조 방법 및 그 산화물 박막을 포함하는 디스플레이 장치 |
JP6744346B2 (ja) * | 2018-03-02 | 2020-08-19 | 東芝デバイス&ストレージ株式会社 | 成膜装置 |
JP6744347B2 (ja) * | 2018-03-02 | 2020-08-19 | 東芝デバイス&ストレージ株式会社 | 半導体装置の製造方法 |
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