JP6744347B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6744347B2 JP6744347B2 JP2018037659A JP2018037659A JP6744347B2 JP 6744347 B2 JP6744347 B2 JP 6744347B2 JP 2018037659 A JP2018037659 A JP 2018037659A JP 2018037659 A JP2018037659 A JP 2018037659A JP 6744347 B2 JP6744347 B2 JP 6744347B2
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- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
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- H01J2237/3321—CVD [Chemical Vapor Deposition]
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Description
Claims (8)
- 窒素ガスとアンモニアガスとを含有する第1ガスをプラズマ化する工程と、
前記第1ガスのプラズマ化によって生成された窒素含有ラジカルを含有する第2ガスを基板に供給する工程と、
III族金属元素を含有する有機金属ガスを前記基板に供給する工程と、
前記第2ガス及び前記有機金属ガスにより、前記基板上にIII族窒化物半導体層を形成する工程と、
を具備し、
前記第1ガス中の前記アンモニアガスの濃度は3.7%であることを特徴とする半導体装置の製造方法。 - 前記有機金属ガスを前記基板に供給する位置よりも前記基板から離れた位置で、前記第1ガスをプラズマ化することを特徴とする請求項1記載の製造方法。
- 前記第2ガスは、前記第1ガスをプラズマ化する位置と、前記有機金属ガスを供給する位置との間に配置されたメッシュ状部材を通過して前記基板に供給されることを特徴とする請求項2記載の製造方法。
- 前記第1ガスは、水素ガスをさらに含有することを特徴とする請求項1記載の製造方法。
- 前記基板上に前記III族窒化物半導体層を形成する際の成長温度は1000℃未満であることを特徴とする請求項1記載の製造方法。
- 前記基板上に前記III族窒化物半導体層を形成する際の圧力が100Pa〜10kPaであることを特徴とする請求項1記載の製造方法。
- 前記有機金属ガスには、アルミニウム、ガリウム、及びインジウムの少なくとも1つの金属元素が含有されていることを特徴とする請求項1記載の製造方法。
- 前記第1ガス中の前記窒素ガス、前記水素ガス、前記アンモニアガスの比率は、10:5.4:0.6であることを特徴とする請求項4記載の製造方法。
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JP2018037659A JP6744347B2 (ja) | 2018-03-02 | 2018-03-02 | 半導体装置の製造方法 |
US16/112,437 US20190272989A1 (en) | 2018-03-02 | 2018-08-24 | Method and apparatus for manufacturing semiconductor device |
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JP2018037659A JP6744347B2 (ja) | 2018-03-02 | 2018-03-02 | 半導体装置の製造方法 |
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JP2019153691A JP2019153691A (ja) | 2019-09-12 |
JP6744347B2 true JP6744347B2 (ja) | 2020-08-19 |
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JP2023020168A (ja) * | 2021-07-30 | 2023-02-09 | 株式会社Screenホールディングス | Iii族窒化物半導体の製造方法 |
Family Cites Families (9)
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JP3659101B2 (ja) * | 1999-12-13 | 2005-06-15 | 富士ゼロックス株式会社 | 窒化物半導体素子及びその製造方法 |
JP2003188104A (ja) * | 2001-12-14 | 2003-07-04 | Fuji Xerox Co Ltd | 窒化物半導体の製造装置、窒化物半導体の製造方法、及びリモートプラズマ装置 |
US7314835B2 (en) * | 2005-03-21 | 2008-01-01 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system and method |
JP5697333B2 (ja) * | 2007-05-25 | 2015-04-08 | 国立大学法人東北大学 | 化合物系薄膜及びその形成方法、並びにその薄膜を用いた電子装置 |
US20090149008A1 (en) * | 2007-10-05 | 2009-06-11 | Applied Materials, Inc. | Method for depositing group iii/v compounds |
CA2653581A1 (en) * | 2009-02-11 | 2010-08-11 | Kenneth Scott Alexander Butcher | Migration and plasma enhanced chemical vapour deposition |
US8698163B2 (en) * | 2011-09-29 | 2014-04-15 | Toshiba Techno Center Inc. | P-type doping layers for use with light emitting devices |
JP6125946B2 (ja) * | 2013-08-08 | 2017-05-10 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置及びプログラム |
JP6406811B2 (ja) * | 2013-11-20 | 2018-10-17 | 国立大学法人名古屋大学 | Iii 族窒化物半導体装置の製造装置および製造方法ならびに半導体ウエハの製造方法 |
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2018
- 2018-03-02 JP JP2018037659A patent/JP6744347B2/ja active Active
- 2018-08-24 US US16/112,437 patent/US20190272989A1/en not_active Abandoned
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JP2019153691A (ja) | 2019-09-12 |
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