JP2007073699A - 酸化物半導体デバイスの製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 185
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 51
- 239000002245 particle Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 132
- 239000000758 substrate Substances 0.000 claims description 131
- 239000011941 photocatalyst Substances 0.000 claims description 46
- 239000011701 zinc Substances 0.000 claims description 26
- 238000010894 electron beam technology Methods 0.000 claims description 24
- 230000001678 irradiating effect Effects 0.000 claims description 21
- 239000000470 constituent Substances 0.000 claims description 17
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 13
- 230000005669 field effect Effects 0.000 claims description 13
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 12
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000003054 catalyst Substances 0.000 abstract 2
- 239000010408 film Substances 0.000 description 100
- 239000007789 gas Substances 0.000 description 42
- 238000004544 sputter deposition Methods 0.000 description 42
- 239000000463 material Substances 0.000 description 41
- 230000015572 biosynthetic process Effects 0.000 description 23
- 229910007541 Zn O Inorganic materials 0.000 description 22
- 239000010409 thin film Substances 0.000 description 20
- 229920000139 polyethylene terephthalate Polymers 0.000 description 18
- 239000005020 polyethylene terephthalate Substances 0.000 description 18
- 238000001312 dry etching Methods 0.000 description 16
- 238000000206 photolithography Methods 0.000 description 16
- 238000001039 wet etching Methods 0.000 description 16
- 239000000203 mixture Substances 0.000 description 13
- 229910010413 TiO 2 Inorganic materials 0.000 description 12
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- -1 SiO 2 Chemical compound 0.000 description 11
- 239000011521 glass Substances 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 229910004140 HfO Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 239000011368 organic material Substances 0.000 description 9
- 239000002861 polymer material Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 7
- 229910006404 SnO 2 Inorganic materials 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910020923 Sn-O Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 230000001699 photocatalysis Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910018956 Sn—In Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/3115—Doping the insulating layers
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/42—Bombardment with radiation
- H01L21/423—Bombardment with radiation with high-energy radiation
- H01L21/428—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Abstract
【解決手段】 酸化物半導体をチャネル層14として用いたFETの製造方法において、チャネル層14を成す酸化物半導体の所望の場所に短波長の光または高エネルギーの粒子を照射する。そして低導電率のチャネル層14に高導電率のドレイン15およびソース16を形成することにより、チャネル層14の界面状態を良好に保ったFETを製造する。あるいは、高導電率の酸化物半導体の所望の場所に光触媒を接触させ、光触媒に光を照射して酸化物半導体に低導電率の部分を形成する。その低導電率の部分をチャネル層に用いて、チャネル層の界面状態を良好に保ったFETを製造する。
【選択図】 図1
Description
本発明の第1の実施の形態による酸化物半導体デバイスの製造方法として、酸化物半導体をチャネルとして用いたFETの製造方法を例にとり、図1〜図3を参照して説明する。最初に、図1のFET構造を例にとり、FET素子構成について説明する。
FETのチャネル層14として用いる上記酸化物半導体は、薄膜として形成する場合、RFマグネトロンスパッタなどのスパッタ法を用いるのが好ましい形態である。また、電子ビーム蒸着やレーザー蒸着あるいは抵抗加熱を用いた蒸着などの蒸着法を用いるのも好ましい形態のひとつである。あるいは、プラズマCVDなどの化学気相成長法(CVD法)を用いるのも好ましい形態のひとつである。あるいは、ゾルゲル法などの溶液塗布法を用いてもよい。上記膜形成方法は、ゲート絶縁膜や電極等を形成する際にも好ましい膜形成方法である。
本発明の第2の実施の形態による酸化物半導体デバイスの製造方法として、酸化物半導体をチャネルとして用いたFETの製造方法を例にとり、図4〜図7を参照して説明する。最初に図4のFET構造を例にとり、FET素子構成について説明する。
12、22、32、42、82、92、102 ゲート電極
13、23、33、43、83、93、103 ゲート絶縁膜
14、24、34、44、84、94、104 チャネル層
15、25、35、45、85、95、105 ドレイン
16、26、36、46、86、96、106 ソース
37 EBガン
57 マスク基板
58 光触媒マスク
67 光触媒片
79 電極
Claims (15)
- 酸化物半導体を用いるデバイスの製造方法であって、
基板上に前記酸化物半導体を形成する工程と、
前記酸化物半導体の所望の場所にエネルギー線を照射することにより前記酸化物半導体の導電率を変化させる工程と、を有することを特徴とする酸化物半導体デバイスの製造方法。 - 前記酸化物半導体の導電率を変化させる工程は、
前記酸化物半導体の所望の領域に該酸化物半導体のバンドギャップエネルギー以上の波長の光を照射することで前記酸化物半導体を高導電率化させる工程であることを特徴とする請求項1記載の酸化物半導体デバイスの製造方法。 - 前記デバイスが酸化物半導体チャネル電界効果トランジスタであり、前記高導電率化させる領域が、前記電界効果トランジスタのチャネルに接するソースおよびドレインであることを特徴とする請求項2記載の酸化物半導体デバイスの製造方法。
- 前記酸化物半導体を高導電率化させる工程で照射される光がX線であることを特徴とする請求項2または3記載の酸化物半導体デバイスの製造方法。
- 前記酸化物半導体を高導電率化させる工程で照射される光の最短波長が、0.15nm以下であることを特徴とする請求項2から4のいずれか1項に記載の酸化物半導体デバイスの製造方法。
- 前記酸化物半導体の導電率を変化させる工程は、前記酸化物半導体の所望の領域に粒子線を照射することで前記酸化物半導体を高導電率化させる工程であること特徴とする請求項1記載の酸化物半導体デバイスの製造方法。
- 前記デバイスが酸化物半導体チャネル電界効果トランジスタであり、前記高導電率化する領域が、前記電界効果トランジスタのチャネルに接するソースおよびドレインであることを特徴とする請求項6記載の酸化物半導体デバイスの製造方法。
- 前記酸化物半導体を高導電率化させる工程で照射される粒子線が電子線であることを特徴とする請求項6または7記載の酸化物半導体デバイスの製造方法。
- 前記酸化物半導体を高導電率化させる工程で照射される粒子線の最短波長が、0.15nm以下であることを特徴とする請求項6から8のいずれか1項に記載の酸化物半導体デバイスの製造方法。
- 前記酸化物半導体の導電率を変化させる工程は、
前記酸化物半導体の所望の場所に光触媒を接触させる工程と、
前記光触媒に該光触媒の光学的バンドギャップ以上のエネルギーを有する光を照射することで前記酸化物半導体を低導電率化させる工程と、を含むことを特徴とする請求項1記載の酸化物半導体デバイスの製造方法。 - 前記デバイスが酸化物半導体チャネル電界効果トランジスタであり、前記酸化物半導体を低導電率化させる領域が、前記電界効果トランジスタのソースとドレインの間に位置するチャネルであることを特徴とする請求項10記載の酸化物半導体デバイスの製造方法。
- 前記酸化物半導体を低導電率化させる工程で照射される光が紫外線であることを特徴とする請求項10または11記載の酸化物半導体デバイスの製造方法。
- 前記光触媒が酸化チタンを含む物質であることを特徴とする請求項10から12のいずれか1項に記載の酸化物半導体デバイスの製造方法。
- 前記光触媒が、基板上に所望の形状に加工して設置されている光触媒マスクであることを特徴とする請求項10から13のいずれか1項に記載の酸化物半導体デバイスの製造方法。
- 前記酸化物半導体が亜鉛、インジウム、又はガリウムの中から選ばれる少なくとも1つを構成元素のひとつとすることを特徴とする請求項1から14のいずれか1項に記載の酸化物半導体デバイスの製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005258268A JP5116225B2 (ja) | 2005-09-06 | 2005-09-06 | 酸化物半導体デバイスの製造方法 |
US11/466,950 US7468304B2 (en) | 2005-09-06 | 2006-08-24 | Method of fabricating oxide semiconductor device |
US12/181,579 US7691715B2 (en) | 2005-09-06 | 2008-07-29 | Method of fabricating oxide semiconductor device |
US12/708,601 US7883934B2 (en) | 2005-09-06 | 2010-02-19 | Method of fabricating oxide semiconductor device |
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JP5116225B2 (ja) | 2013-01-09 |
US7883934B2 (en) | 2011-02-08 |
US20100144089A1 (en) | 2010-06-10 |
US7691715B2 (en) | 2010-04-06 |
US20070054507A1 (en) | 2007-03-08 |
US7468304B2 (en) | 2008-12-23 |
US20080293208A1 (en) | 2008-11-27 |
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