US9412623B2 - Metal oxide TFT with improved source/drain contacts and reliability - Google Patents
Metal oxide TFT with improved source/drain contacts and reliability Download PDFInfo
- Publication number
- US9412623B2 US9412623B2 US14/833,462 US201514833462A US9412623B2 US 9412623 B2 US9412623 B2 US 9412623B2 US 201514833462 A US201514833462 A US 201514833462A US 9412623 B2 US9412623 B2 US 9412623B2
- Authority
- US
- United States
- Prior art keywords
- layer
- oxide semiconductor
- metal oxide
- work function
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 156
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 152
- 239000004065 semiconductor Substances 0.000 claims abstract description 134
- 229910052751 metal Inorganic materials 0.000 claims abstract description 94
- 239000002184 metal Substances 0.000 claims abstract description 94
- 238000002161 passivation Methods 0.000 claims abstract description 73
- 238000000034 method Methods 0.000 claims abstract description 64
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000001301 oxygen Substances 0.000 claims abstract description 42
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 42
- 239000012212 insulator Substances 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 34
- 230000004888 barrier function Effects 0.000 claims abstract description 27
- 150000002739 metals Chemical class 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 11
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000009413 insulation Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 235
- 238000000151 deposition Methods 0.000 claims description 28
- 230000008021 deposition Effects 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- -1 SiONx Inorganic materials 0.000 claims description 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 8
- 238000001771 vacuum deposition Methods 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 229910052593 corundum Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 claims description 4
- 230000009977 dual effect Effects 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- 229910003564 SiAlON Inorganic materials 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 229910020286 SiOxNy Inorganic materials 0.000 claims description 3
- 229910003070 TaOx Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- 125000002524 organometallic group Chemical group 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 3
- 229920000548 poly(silane) polymer Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 229910011255 B2O3 Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 238000012864 cross contamination Methods 0.000 claims description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 2
- 230000005661 hydrophobic surface Effects 0.000 claims description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 claims description 2
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium(III) oxide Inorganic materials O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 238000002207 thermal evaporation Methods 0.000 claims 1
- 238000000137 annealing Methods 0.000 description 19
- 239000010408 film Substances 0.000 description 11
- 238000003491 array Methods 0.000 description 9
- 238000000059 patterning Methods 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 239000002131 composite material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XOJVVFBFDXDTEG-UHFFFAOYSA-N Norphytane Natural products CC(C)CCCC(C)CCCC(C)CCCC(C)C XOJVVFBFDXDTEG-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 108010038083 amyloid fibril protein AS-SAM Proteins 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000002365 multiple layer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 239000002094 self assembled monolayer Substances 0.000 description 1
- 239000013545 self-assembled monolayer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
- H01L21/383—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/42—Bombardment with radiation
- H01L21/423—Bombardment with radiation with high-energy radiation
- H01L21/428—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/4763—Deposition of non-insulating, e.g. conductive -, resistive -, layers on insulating layers; After-treatment of these layers
- H01L21/47635—After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in regions of the metal oxide semiconductor not covered by the etch stop layer, on which overlying and spaced apart source/drain metals are formed. Subsequently heating the transistor in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to a desired level. Providing additional passivation layer(s) on top of the transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.
Description
This application is a continuation-in-part application of U.S. Pat. No. 8,679,905, issued Mar. 25, 2014 and co-pending application Ser. No. 14/175,521, entitled Metal Oxide TFT with Improved Source/Drain Contacts.
This invention generally relates to metal oxide TFTs and more specifically to forming an active layer with areas of different carrier densities whereby the source/drain contacts to the metal oxide semiconductor film are improved and the reliability of the metal oxide TFTs is enhanced.
In the prior art, amorphous silicon (a-Si) thin film transistors are formed by depositing a first layer of a-Si semiconductor material over a gate and gate insulator layer and then depositing a layer of highly doped silicon (e.g. n+ layer) on top of the first layer. Metal contacts for the source and drain are then formed on the highly doped layer defining a channel area in the first a-Si layer between the contacts. The highly doped layer over the channel area can then be etched away so as not to adversely affect the channel area. The low mobility in the a-Si TFT channel makes the device less demanding on contact resistance. The metal contacts formed on the highly doped area provide a low resistance (ohmic) contact.
In metal oxide thin film transistors (MOTFT) the source and drain metal contacts are formed directly on the metal oxide semiconductor layer. That is the metal oxide semiconductor material is the same under the source and drain metal contacts as it is in the channel area. For MOTFTs the lack of an n+ layer and a higher bandgap makes it harder to provide a good ohmic contact. Furthermore, the high mobility of the metal oxide semiconductor material demands a lower contact resistance than in a-Si TFTs. Without a good, low resistance contact, hereinafter referred to as an ohmic contact, the high mobility of the metal oxide semiconductor material can be masked by the contact resistance. However, ohmic contacts in MOTFTs have been virtually unknown to date or are very difficult to form and/or retain, especially with a simple and manufacturing-friendly method.
It would be highly advantageous, therefore, to remedy the foregoing and other deficiencies inherent in the prior art.
Accordingly, it is an object of the present invention to provide new and improved source/drain to metal oxide semiconductor contacts in a MOTFT.
It is another object of the present invention to provide new and improved source/drain to metal oxide semiconductor contacts in a MOTFT that form low resistance ohmic contacts using a method which is relatively easy and inexpensive to implement during device fabrication.
It is also an object of the present invention to provide a process for fabricating a MOTFT from a uniform metal oxide semiconductor film of which portions in contact with the source/drain metal contacts have a carrier concentration greater than the carrier concentration in the channel area.
It is also an object of the present invention to provide an insulating, passivation layer shielding the MOTFT channel area, which passivation layer serves as a chemical barrier under TFT storage/operation conditions and during TFT fabrication process steps after the passivation layer. The as deposited passivation layer possesses sufficient mobility to oxygen at an elevated annealing temperature allowing turning carrier concentration and density of oxygen vacancy in the semiconductor channel area to desired ranges, and oxidizing the passivation layer to levels which resist to the chemicals experienced during the following deposition and etching process steps.
It is also an object of the present invention to provide an etch-stop/passivation layer over the metal-oxide semiconductor channel area, whose deposition process causes little or no damage to the underlying metal oxide semiconductor layer such that its carrier concentration is little changed after coating the etch stop passivation layer.
It is another object of the present invention to provide an insulating, passivation layer shielding the channel area, which passivation layer includes oxygen containing groups, and which serves as an oxygen source at annealing temperatures and serves as a chemical barrier at TFT storage/operation temperatures. When such passivation layer is positioned in between channel and source/drain electrodes, such passivation layer also function as an etch-stop during source/drain patterning stage.
It is another object of the present invention to provide an annealing process after which portions of the metal oxide semiconductor film not covered by the etch-stop/passivation layer exhibit a significant net loss of oxygen resulting in much higher carrier concentration than the portion of metal oxide semiconductor in the channel area which is covered by the etch stop/passivation layer, enabling low resistance ohmic contacts between source/drain electrodes and said portions of the metal oxide semiconductor film with much higher carrier concentration.
Briefly, the desired objects of the instant invention are achieved in accordance with a method of forming an active layer for a TFT with areas of different carrier densities which enables metal oxide TFTs with improved source/drain contacts and reliability.
The method includes the step of providing a substrate with a gate, a layer of gate dielectric insulator adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate dielectric insulator opposite the gate, a patterned passivation or etch stop layer covering part of the metal oxide semiconductor, with or without vacuum break between deposition of said passivation or etch stop layer and deposition of said metal oxide semiconductor, and annealing at an elevated temperature high enough to selectively increase the carrier concentration in regions of the metal oxide semiconductor layer not covered by the etch stop layer.
To further achieve the desired objects of the instant invention, provided is a method of forming ohmic source/drain contacts in a metal oxide semiconductor thin film transistor including providing a gate, a gate dielectric, a high carrier concentration metal oxide semiconductor active layer with a band gap and spaced apart source/drain metal contacts in a thin film transistor configuration. The spaced apart source/drain metal contacts define a channel region in the active layer. An oxidizing ambient is provided adjacent the channel region and the gate and the channel region are heated in the oxidizing ambient to reduce the carrier concentration in the channel area, optionally with simultaneous irradiation of UV light with preferred wavelength of 405 nm or shorter to help detach hydrogen from the various bonds in and around the metal oxide semiconductor active layer. Alternatively or in addition each of the source/drain contacts includes a very thin layer of low work function metal positioned on the metal oxide semiconductor active layer and a barrier layer of high work function metal is positioned on the low work function metal.
The desired objects of the instant invention are further achieved in accordance with one embodiment thereof wherein a metal to metal oxide low resistance ohmic contact in a metal oxide semiconductor thin film transistor includes a gate, a gate dielectric, a high carrier concentration metal oxide semiconductor active layer with a band gap and spaced apart source/drain metal contacts in a thin film transistor configuration. The spaced apart source/drain metal contacts define a channel region in the active layer. Portions of the metal oxide semiconductor active layer in contact with the source/drain metal contacts have a carrier concentration greater than a carrier concentration in the channel region.
The desired objects of the instant invention are further achieved in accordance with one embodiment thereof wherein a metal to metal oxide low resistance ohmic contact in a metal oxide semiconductor thin film transistor includes a gate, a gate dielectric insulator, a metal-oxide semiconductor active channel layer comprising a single layer, or bi- or multiple sub-layers with different chemical compositions, the top surface of the semiconductor metal-oxide layer is partially covered by a passivation or etch-stop layer, which is deposited with or without vacuum break from deposition of said metal oxide semiconductor channel layer, and an annealing process after which portions of the metal oxide semiconductor channel layer not covered by the passivation or etch stop layer exhibit significant net loss of oxygen resulting in much higher carrier concentration than the portion of metal oxide semiconductor layer in the channel area which is covered by the passivation or etch stop layer, enabling low resistance ohmic contact between source/drain metals and said portions of the metal oxide semiconductor layer with significantly higher carrier concentration. Where there is no vacuum break between the deposition of the passivation/etch-stop layer and deposition of metal oxide semiconductor layer, the interface between the two layers is thus kept pristine and free from any contamination, which assures superb device performance and reliability.
Alternatively or in addition to the above embodiment, a metal to metal oxide low resistance ohmic contact in a metal oxide semiconductor thin film transistor includes source/drain metal contacts with a very thin layer of low work function metal positioned on the metal oxide semiconductor active layer, the work function of the low work function metal being one of equal to and lower than a work function of the metal oxide semiconductor active layer, and a barrier layer of high work function metal positioned on the low work function metal, the work function of the high work function metal being one of equal to and greater than the work function of the metal oxide semiconductor active layer. Alternatively the layers of low work function metal and high work function metal can be replaced with a single layer in which the low work function metal and high work function metal are mixed in a sort of alloy.
It is worth noting that one common feature of all embodiments of this invention is that the passivation/etch stop layer serves as a chemical barrier under TFT storage/operation conditions and during TFT fabrication, especially during a source/drain patterning stage. The same passivation layer also possesses sufficient mobility to oxygen during annealing either before or after the formation of source and drain. In a preferred embodiment of the present invention, the etch stop passivation layer is deposited by a method that causes little or no damage to the underlying metal oxide semiconductor layer, for example by a solution process such as sol gel, or a CVD or PVD vacuum deposition process at low temperature, low power, and low plasma intensity near the film being deposited. During vacuum deposition of the etch stop passivation layer where a plasma is present in the vicinity of the film being deposited, it is advantageous to lower the power density and keep sufficient base pressure etc. to reduce the plasma intensity so that the damage to the underlying metal oxide semiconductor layer by ion bombardment or UV irradiation is minimized. Lower substrate temperature during vacuum deposition helps minimize the loss of oxygen from the metal oxide semiconductor layer during the formation of the etch-stop passivation layer, thereby reducing damage to the TFT channel.
In another preferred embodiment of the present invention, additional passivation layer(s) are deposited on top of the thin film transistor after completion of source/drain patterning, which help(s) protect the device from ambient moisture and chemicals. The additional passivation layer(s) include(s): SiNx, SiOxNy, AlN, Al2O3, SiAlON, TaOx, TiO2, and organic material such as polyimide, PMMA, PMGI, polysilane, polysiloxane, spin-on-glass, or commercially available photoresists used as planarization layer or bank layer in flat-panel field.
The foregoing and further and more specific objects and advantages of the instant invention will become readily apparent to those skilled in the art from the following detailed description of a preferred embodiment thereof taken in conjunction with the drawings, in which:
Turning now to FIG. 1 , a simplified layer diagram of a prior art metal oxide TFT with a passivation layer in the form of island-type etch-stop layer and source-drain contacts is illustrated. TFT 10 includes a substrate 12 having a gate 14 formed in the upper surface thereof. Gate 14 is covered by a thin layer 16 of gate insulator (also called gate dielectric in the field) in a well-known fashion. A layer of metal oxide semiconductor 18 is formed on the upper surface of gate insulator layer 16 in any well-known fashion. Note that the carrier concentration in the metal oxide semiconductor layer 18 is uniformly distributed in this case.
In conventional metal oxide thin film transistors (MOTFT) the metal contacts are formed directly on the metal oxide semiconductor layer. That is, the metal oxide semiconductor material is the same under the metal contacts as it is in the channel area. For MOTFTs the lack of an n+ layer and a larger bandgap make it harder to provide a good ohmic contact. Furthermore, the high mobility of the metal oxide semiconductor material demands a lower contact resistance than that in a-Si TFTs. Without a good ohmic contact, the high mobility of the metal oxide semiconductor material can be masked by the contact resistance.
In the prior art, the source and drain contacts in a MOTFT are usually the Schottky barrier type where metal is in direct contact with metal oxide semiconductor material. Generally, stable contact metals (e.g. Mo, W, Au, Pt, Ag, etc.) have a relatively high work function while metals with a low work function (e.g. Al, Mg, Ti, Ta, Zn, In, V, Hf, Y, etc.) are unstable or oxidize relatively easily. The high work function metals form a Schottky barrier with metal oxide semiconductor material and to provide conduction, carriers must tunnel through the barrier. If the barrier is thin tunneling can occur with only a small amount of resistance but if the barrier is thick tunneling may be nearly prevented. In either case the Schottky barrier contact is not as desirable as an ohmic contact with a low resistance.
Generally, there are two ways or methods to make a good ohmic contact between the metal oxide semiconductor and the source/drain (S/D) metal: 1) the carrier concentration of the metal oxide semiconductor at the interface with the S/D metal should be as high as possible; and/or 2) the work function of the S/D metal should substantially match the work function of the metal oxide semiconductor so there is little or no barrier for electron injection. However, each of these methods above has serious problems that must be overcome.
There is a dilemma in the device design for MOTFT. One problem is that the same high carrier concentration (e.g. >1018/cm3) metal oxide semiconductor material required for good ohmic contact to S/D also appears in the TFT channel area. For the TFT to operate properly, the channel carrier concentration cannot be too high (e.g. <1018/cm3) or else the TFT can not be fully pinched off, resulting in very negative threshold voltage and high off-current. Therefore, different carrier densities or concentrations must be created in different regions of the metal oxide semiconductor active layer of the TFT.
In U.S. Pat. No. 8,679,905 (4674-A23) and co-pending application Ser. No. 14/175,521 (4674-A23D), entitled Metal Oxide TFT with Improved Source/Drain Contacts, we presented a method to create low carrier density in the channel area and high carrier density in the S/D contact area with a high carrier density metal-oxide film at as deposited and patterned stage by proper annealing the MOTFT with a passivation/etch-stop layer possessing a Tg, above which can pass oxygen to channel area and reduce carrier density to level needed to switch off the MOTFT at zero bias.
In this application, two other examples of achieving different carrier densities or concentrations in different regions of the metal oxide semiconductor active layer are provided.
The first example of achieving different carrier densities or concentrations in different regions of the metal oxide semiconductor layer of a TFT is described in conjunction with FIGS. 2a and b . Here it will be understood that it is believed that any of the various possible MOTFT configurations could be adapted to the disclosed example including for example a bottom gate, bottom source/drain type of device, a top gate, top source/drain type of device, a top gate, bottom source/drain type of device, etc. In this case, as illustrated in FIG. 2a , TFT 20 includes a substrate 22 having a gate 24 formed in the upper surface thereof. Gate 24 is covered by a thin layer 26 of gate insulator in a well-known fashion. Instead of depositing a high carrier concentration metal oxide semiconductor active layer in the very beginning, only a medium carrier concentration (e.g., in range of 1012-1018 carriers (electrons) per cm3) metal oxide semiconductor layer 28 needs to be deposited and patterned, after which an oxygen-providing and oxygen-conducting inorganic passivation or etch-stop layer (30) is deposited and patterned. An annealing process at elevated temperature (for example in range of 200-500° C., preferably in 250-400° C.) is then carried out in an oxygen-containing and/or nitrogen-containing or an inert atmosphere, as shown in FIG. 2b , during which the oxygen diffusing in and out of the metal oxide semiconductor in the region (28 i) covered by the passivation or etch-stop layer 30 essentially reaches an equilibrium with little or no net change in oxygen content and therefore little or no change in the carrier concentration in the channel region, however in the regions (28 n+) not covered by the passivation or etch-stop layer (30), the rate at which oxygen escapes the metal oxide semiconductor far exceeds the rate at which oxygen diffuses into and gets bonded to the metal oxide semiconductor, resulting in a significant net loss of oxygen and thus significant increase in carrier concentration in the metal oxide semiconductor in these regions (28 n+) after the high temperature anneal. Source and drain deposition is then carried out after this high temperature anneal, to make sure that a good ohmic contact is formed between S/D metal (not shown) and the highly conductive metal oxide semiconductor regions (28 n+).
The second example of providing different carrier densities or concentrations in different regions of the metal oxide semiconductor layer of a TFT is described in conjunction with FIGS. 3a and b . Here it will be understood that it is believed that any of the various possible MOTFT configurations could be adapted to the disclosed example including for example a bottom gate, bottom source/drain type of device, a top gate, top source/drain type of device, a top gate, bottom source/drain type of device, etc. In this case, as illustrated in FIG. 3a , TFT 30 includes a substrate 32 having a gate 34 formed in the upper surface thereof. Gate 34 is covered by a thin layer 36 of gate insulator in a well-known fashion. Dual active layer (38 f/38 b) with high carrier concentration (e.g., >1018 carriers per cm3) metal oxide semiconductor 38 f adjacent to the gate insulator 36, capped by a low carrier concentration (e.g., <1017 carriers per cm3) metal oxide semiconductor 38 b on the back was deposited and patterned, after which an oxygen-providing and oxygen-conducting inorganic passivation or etch-stop layer (40) is deposited and patterned. An annealing process at elevated temperature (for example, in range of 200-500° C., preferably in 250-400° C.) is then carried out in an oxygen-containing or nitrogen-containing or an inert atmosphere, as shown in FIG. 3b , during which the oxygen diffusing in and out of the metal oxide semiconductor bi-layer in regions (38 fi/38 bi) covered by the passivation or etch-stop layer essentially reaches an equilibrium with little or no net change in oxygen content and therefore little or no change in the carrier concentration in the channel region, however in regions (38 fn+/38 bn+ bi-layer) not covered by the passivation or etch-stop layer, the rate at which oxygen escapes the metal oxide semiconductor far exceeds the rate at which oxygen diffuses into and gets bonded to the metal oxide semiconductor, resulting in a significant net loss of oxygen and thus significant increase in carrier concentration in the metal oxide semiconductor in these regions (38 fn+/38 bn+ bi-layer) after the high temperature anneal. Source and drain deposition is carried out after this high temperature anneal, to make sure that a good ohmic contact is formed between S/D metal (not shown) and the highly conductive metal oxide semiconductor regions (38 fn+/38 bn+ bi-layer).
The bi-layer channel arrangement can be expended into multiple sublayers in the metal-oxide semiconductor stack with high carrier density close to the interface with GI (36) and lowest carrier density near the interface with passivation layer (40). In U.S. Pat. No. 8,907,336 (4674-A16D) and U.S. Pat. No. 9,099,563 (4674-A16C), a class of stable metal-oxide semiconductor composite film was disclosed for the MOTFT channel layer. Such composite comprises a fraction of metal-oxide semiconductor with ionic metal-oxide bonds (denoted as XO) and a fraction of metal-oxide or quasi-metal-oxide insulator with covalent metal-oxide bonds (denoted as YO). Carrier density can be tuned by the ratio between YO and XO, and for a given composite with fixed X-to-Y ratio, carrier density can be tuned by varying oxygen and nitrogen composition. These materials can be used for the channel layer in single layer (FIGS. 2a and b ) or with multiple sub-layers (as shown in FIGS. 3a and b ).
It is worth noting that the gate insulator layers in FIGS. 2a and b and FIGS. 3a and b can be a hydrophilic or hygroscopic insulator material. During the step of heating at elevated temperature after forming patterned etch-stop layer, an accelerated oxidation process can be achieved by the hydrophilic or hygroscopic gate insulator which releases trapped water molecules at the gate insulator/channel interface, thus providing an additional source of oxygen. Examples of such hydrophilic or hygroscopic insulator materials include SiO2:H, SiN:H, SiON:H, Al2O3:H, HfO2:H, ZrO2:H and their combinations in stack or in blend form.
The passivation/etch stop layer (30 in FIGS. 2a and b or 40 in FIGS. 3a and b ) serves as a chemical barrier under TFT storage/operation conditions and during TFT fabrication, especially during the source/drain patterning stage. The same passivation layer also possesses sufficient mobility to oxygen during annealing either before or after the formation of source and drain. Examples of such inorganic etch-stop/passivation layers include SiO2, SiONx, Al2O3, Ta2O5, TiO2, MgO, B2O3, ZrO2, Y2O3, HfO2, V2O5, Nb2O5, La2O3, Sc2O3 and their combinations in stack or blend form.
In a preferred embodiment of the present invention, the etch stop passivation layer is deposited by a method that causes little or no damage to the underlying metal oxide semiconductor layer, for example by a solution coating process from a sol-gel, or from a solution comprising corresponding organometallic or organosilanal/organolsiloxanal molecules, a post-coating annealing is typically needed to convert the coating film to the targeting inorganic insulator. This annealing can be combined with the post etch-stop deposition annealing process
The etch-stop/passivation layer can also be deposited by a CVD or PVD vacuum deposition process at low temperature, low power, and low plasma intensity near the film being deposited. During vacuum deposition of the etch stop passivation layer where a plasma is present in the vicinity of the film being deposited (for example in the case of PECVD or sputter deposition), it is advantageous to lower the power density, select proper base pressure and other means available in the available deposition equipment to reduce the plasma intensity so that the damage to the underlying metal oxide semiconductor layer by ion bombardment or UV irradiation is minimized. Lower substrate temperature during vacuum deposition helps minimize the loss of oxygen from the metal oxide semiconductor layer during the formation of the etch-stop passivation layer, thereby reducing damage to the TFT channel.
When a vacuum deposition process is chosen for the etch-stop/passivation layer, the deposition of the passivation/etch-stop layer and deposition of metal oxide semiconductor layer can be carried out without vacuum break. The interface between the two layers is thus kept pristine and free from any contamination. Such process flow can improve device performance and reliability. In practice, the deposition system for the corresponding layers can be an in-line or cluster sputtering system, and the sputter targets for inorganic insulator etch stop passivation layer and for metal oxide semiconductor layer are either placed in separate sputter chambers separated by a gate valve, or are placed in a single sputter chamber with proper shielding between the two targets to prevent cross-contamination. The non-vacuum-break can also be achieved between two different deposition tools or different type of tools such as between sputter and PECVD, by means of a vacuum-holding chamber on a transportation vehicle.
In certain applications with the MOTFT disclosed in this invention, additional insolating passivation layer(s) or structure are needed on top of the thin film transistor after completion of source/drain patterning. In addition to providing insulation over the MOTFT, such additional passivation help(s) protect the device from ambient moisture and chemicals. The additional passivation layer(s) include(s): SiO2, SiNx, SiOxNy, AlN, Al2O3, SiAlON, TaOx, TiO2, and organic material such as polyimide, PMMA, PMGI, polysilane, polysiloxane, spin-on-glass, or commercially available photoresists used as planarization layer or bank layer in flat-panel field. A class of organic/organometallic material known as SAM (self-assembled-monolayer) or surface adhesion promotor can also be used. The additional passivation layer can be in single layer form, or in stack form with two or multiple sub-layers. It is found that inorganic/organic or organo/inorganic bilayers or multilayer stacks comprising such pairs serve better passivation than a passivation structure with a single layer. A hydrophobic surface is preferred at the free-surface of the last passivation layer.
Typical materials used for the substrate 22 and 32 in FIGS. 2a and b and FIGS. 3a and b include glass, stainless steel with a surface insulation coating, and plastic sheet. They can be in either rigid or flexible form.
Typical materials used for the gate metal 24 and 34 in FIGS. 2a and b and FIGS. 3a and b include Mo, Al, Cu, Ti Nd, or their combinations in stack or in alloy blend.
To improve the ohmic contact and minimize the contact resistance between the metal oxide semiconductor material and the S/D metal, one could select the materials for the semiconductor channel layer(s) and the S/D metal layer to match their work functions. There is a dilemma in the device design. The problem is that a low work function metal that substantially matches the work function of the metal oxide semiconductor is very unstable and relatively quickly absorbs oxygen from the metal oxide. Thus, the contact metal becomes a poor conductor or insulating metal oxide at the interface and increases the contact resistance. A high work function stable metal generally has a work function much higher than the metal oxide semiconductor work function so that the junction becomes a Schottky barrier junction instead of a low resistance ohmic contact.
A preferred way of solving this dilemma is illustrated in the simplified layer diagram of FIG. 4 , showing a partial MOTFT 40 with an improved S/D to metal oxide semiconductor contact in accordance with the present invention. MOTFT 40 includes a substrate 42 with a gate metal electrode 48 formed therein. A thin layer 47 of gate insulator is formed over gate metal electrode 48 and at least partially over the upper surface of substrate 42. A layer of metal oxide semiconductor material is formed or patterned on the surface of layer 47, and is selectively reduced during an annealing process to form highly conductive regions 46 n+ in areas not covered by etch stop passivation layer 20 and less conductive region 46 i underneath the etch stop passivation layer 20. A S/D metal to metal oxide semiconductor ohmic contact is formed on the upper surface of metal oxide semiconductor layer 46 n+. Here it will be understood that while a typical underlying gate and overlying source/drain type of MOTFT is illustrated, it is believed that any of the various possible MOTFT configurations could be adapted to the disclosed example including for example a bottom gate, bottom source/drain type of device, a top gate, top source/drain type of device, a top gate, bottom source/drain type of device, etc. Although single active layer 46 is shown in the example in FIG. 4 , dual or multiple active layer metal oxide semiconductors such as that illustrated in FIGS. 3a and b could also be used.
It will be understood that typical metal oxide semiconductor materials described in this disclosure generally include at least one of zinc oxide, indium oxide, tin oxide, gallium oxide, cadmium oxide, or composites comprising their combinations. The composite metal-oxide disclosed in U.S. Pat. No. 8,907,336 (4674-A16D) and U.S. Pat. No. 9,099,563 (4674-A16C) provided another class of metal-oxide for the channel layer. The typical work function of these metal oxide semiconductors or metal-oxide composites is around −4 eV from vacuum (0 eV). For metals with work functions less than 4 eV, there is a strong tendency to form their metal oxides, which are relatively poor conductors. Some typical examples of low work function metals include Al, Mg, Ti, Ta, Zn, In, V, Hf, Y and alloys comprising them. Generally, the lower the work function, the less conductive their oxide tends to be, e.g. Mg has a work function of −3.5 eV, Al has a work function of −3.7 eV, and magnesium oxide and aluminum oxide are both relatively good insulators (or poor conductors).
Metal to metal oxide semiconductor (46 n+) ohmic contact in FIG. 4 is a multiple metal contact that essentially solves the problem expressed above. A first very thin layer 52 of low work function metal is deposited on the surface of metal oxide semiconductor layer 46 n+ to form a low resistance ohmic contact. Layer 52 is less than 5 nm thick and preferably less than 1 nm thick. A barrier layer 54 is deposited over layer 52 with a thickness greater than 10 nm and preferably greater than 50 nm. Examples of barrier metals that can be used include Mo, W, Au, Pt, Ag, Cu, Cr, Ni and alloys comprising them. Generally, the barrier metals have a high work function (e.g. 4.5 eV and greater) and are thus relatively stable metals. An optional bulk layer 56 of highly conductive contact metal, such as aluminum and copper, may be added on top of barrier layer 54 when the same metal layers are used for data and power lines in large size, high pixel count, active display or sensor arrays.
Thus, in the operation of metal to metal oxide semiconductor ohmic contact in FIG. 4 , initially the very thin layer 52 of low work function metal forms an ohmic contact with metal oxide semiconductor layer 46 n+. Because the low work function metal is unstable, oxygen from metal oxide semiconductor layer 46 n+ relatively rapidly oxidizes it. The barrier metal layer of high work function metal (54) is included to block the further migration of oxygen from metal oxide semiconductor layer 46 n+ into contact metal layer 56. It should be noted that layer 52 is so thin such that the amount of metal oxide accumulated from the oxidizing thereof has little or no effect on conduction of the contact. The combination of multi-layer S/D and selectively reduced metal oxide semiconductor ensures that during exposure of metal oxide TFT 40 to an oxygen-containing or nitrogen-containing or inert ambience at high temperature, the metal oxide semiconductor layer 46 n+ under S/D contact will become even more conductive due to migration of oxygen into the low work function metal layer 52, which further improves the ohmic contact while enhancing the difference in carrier densities or concentrations in different regions of the channel layer.
In a slightly different embodiment, very small amounts of the low work function metal are alloyed or mixed into the metal of barrier layer 54, rather than forming a separate layer 52. Such an alloy or mixture still provides a low work function and good ohmic contact with the metal oxide semiconductor layer. An example of using such a low work function alloy, Mg—Ag, for the cathode in an organic light emitting diode was demonstrated by Kodak (C. W. Tang et al., Applied Phys. Letters 51, 913 (1987)), effective electron injection from the alloy cathode into organic semiconductor Alq layer was achieved.
In this embodiment, the low work function metal in the alloy adjacent the contact surface of metal oxide semiconductor material absorbs oxygen from the metal oxide semiconductor material, thus raising the carrier density or concentration and improving the metal to semiconductor contact. Since only a small amount of low work function metal is present the oxidation has little effect on the contact. Also, un-oxidized low work function material is shielded by the barrier metal so it has little effect on the contact.
The present invention provides new and improved low resistance ohmic source/drain metal contacts in a MOTFT. The improved source/drain metal contacts in a MOTFT form a low resistance ohmic contact that has not been previously readily achievable. Further, the improved source/drain metal contacts in a MOTFT are relatively easy and inexpensive to fabricate. It will be readily understood that either the process of selectively reducing the carrier concentration by high temperature annealing in oxygen-containing, or nitrogen-containing or inert atmosphere (i.e. providing different carrier densities or concentrations in different regions of the active layer) or the process of forming a multiple-layer S/D metal contact can be used separately or in combination if desired. The structure and the corresponding fabrication methods for the MOTFTs disclosed herein, in fact, provide an effective and simple way of forming zones in the metal oxide semiconductor layer with distinctly different carrier concentrations.
As an example, FIG. 5a shows the carrier concentration of a MOTFT made with an uniformly high carrier concentration in metal oxide semiconductor which was resulted from performing the high temperature annealing before the etch-stop layer deposition and patterning. The carrier density is uniform in the metal-oxide layer and is substantially higher than 1018 electrons/cm3. No sign of current modulation even at Vgs=−30V. The capacitance of the GI layer used for this device is ˜30 nF/cm2, and the ability of charge modulation at 1019 electrons/cm3 is anticipated. The flat current at 0.1 mA under Vds=0.1V is consistent to such observation.
In contrast, when shifting the annealing process after forming the patterned etch-stop layer at the same temperature, under the same ambient environment, the channel current in the completed TFT can be switched off completely at ˜0V. This fact implies that the carrier density in channel area is reduced to a level below ˜1017 electrons/cm3. The contact resistance from I-V fitting reveals a number in 1-10 KΩ/μm range. For a MOTFT with channel width of 10 mm, the contact resistance is thus below 1 kΩ.
The MOTFT with improved metal-to-metal-oxide channel contact are especially important to TFTs with high mobility and high current switching ratio. For example, in an X-ray image array with 8000 scan lines and with 14-16 bits gray levels, TFT with switch ratio more than 10 orders of magnitude are required. For a display with 4000 scan lines and with 24000 display elements in each scan line, a TFT with mobility over 50 cm2/Vsec is also required. The MOTFT disclosed in this invention enables displays and image arrays with high pixel counts and large dynamic range. These TFTs also enable driving circuits integrated in the peripheral area of an active display and image array. Such TFTs can be used for a variety of thin-film electronic applications including active matrix displays, image sensor arrays, touch sensor arrays, proximity sensing arrays, biosensor arrays, chemical sensor arrays and proximity sensing arrays and electronic arrays with multiple functionalities based on combinations above. The active displays comprise, but are not limited to, active matrix liquid crystal displays, active matrix organic light emitting displays, active matrix inorganic light emitting displays, active matrix electrophoretic displays, and active matrix MEMS (microelectromechanical system) displays Various changes and modifications to the embodiment herein chosen for purposes of illustration will readily occur to those skilled in the art. To the extent that such modifications and variations do not depart from the spirit of the invention, they are intended to be included within the scope thereof which is assessed only by a fair interpretation of the following claims.
Claims (30)
1. A method of forming ohmic source/drain contacts in a metal oxide semiconductor thin film transistor comprising the steps of:
providing a substrate with a gate, a layer of gate insulator adjacent the gate, and a layer of metal oxide semiconductor material positioned on the layer of gate insulator opposite the gate;
forming a patterned etch stop passivation layer on selected portions of the layer of metal oxide semiconductor material defining source/drain areas and heating at an elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in the source/drain areas of the metal oxide semiconductor layer not covered by the etch-stop layer;
depositing overlying and spaced apart source/drain metals on the source/drain areas to make ohmic source/drain contacts in a thin film transistor configuration;
subsequently heating the thin film transistor on the substrate in an oxygen-containing or nitrogen-containing or inert ambience to improve the source/drain contacts and adjust the threshold voltage to a desired level; and
providing additional passivation layer(s) on top of the thin film transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.
2. The method as claimed in claim 1 wherein the step of providing a layer of metal oxide semiconductor material includes providing a single layer metal oxide semiconductor with a carrier concentration in range of 1012-1018 electrons/cm3.
3. The method as claimed in claim 2 wherein the carrier concentration is in range of 1015-1018 electrons/cm3.
4. The method as claimed in claim 1 wherein the step of providing a layer of metal oxide semiconductor material includes providing a dual overlying sub-layer metal oxide semiconductor with a high carrier concentration (1017-1019/cm3) in the sub-layer adjacent to the gate insulator and a low carrier concentration (<1017/cm3) in the sub-layer on top of the high carrier concentration layer.
5. The method as claimed in claim 1 wherein the step of providing a layer of metal oxide semiconductor material includes providing a multiple sub-layer metal oxide semiconductor with a high carrier concentration (1017-1019 electrons/cm3) in a 1st sub-layer adjacent to the gate insulator and a low carrier concentration (<1017 electrons/cm3) in a last sub-layer in contact with the passivation layer.
6. The method as claimed in claim 1 wherein the step of heating at elevated temperature after forming the patterned etch-stop layer is in range of 200-500° C.
7. The method as claimed in claim 6 wherein the step of heating at elevated temperature after forming the patterned etch-stop layer is in range of 250-400° C.
8. The method as claimed in claim 1 wherein the gate insulator includes hydrophilic or hygroscopic insulator materials, and the step of heating at elevated temperature after forming the patterned etch-stop layer includes an accelerated oxidation process assisted by the hydrophilic or hygroscopic gate insulator that releases trapped water molecules at the gate insulator/channel interface, thus providing an additional source of oxygen.
9. The method as claimed in claim 8 wherein the gate insulator includes at least one of SiO2:H, SiN:H, SiON:H, Al2O3:H, HfO2:H, ZrO2:H and their combinations in stack or in blend form.
10. The method as claimed in claim 1 wherein the overlying and spaced apart source/drain metals further include metal contacts with a first portion including a low work function metal and a high work function barrier metal, the work function of the low work function metal being one of equal to and lower than a work function of the metal oxide semiconductor active layer, and the work function of the barrier material being one of equal to and greater than the work function of the metal oxide semiconductor active layer, the first portion being positioned on the metal oxide semiconductor active layer, and a second portion of high conductivity metal positioned on the first portion.
11. The method as claimed in claim 10 wherein the low work function metal has a work function lower than a work function of approximately −4 eV.
12. The method as claimed in claim 10 wherein the high work function barrier metal has a work function higher than a work function of approximately −4 eV.
13. The method as claimed in claim 10 wherein the low work function metal comprises Al, Mg, Ti, Ta, Zn, In, V, Hf, Y or alloy comprising them.
14. The method as claimed in claim 10 wherein the high work function metal comprises Mo, W, Au, Pt, Ag, Cu, Cr, Ni.
15. The method as claimed in claim 1 wherein the overlying and spaced apart source/drain metals further include metal contacts with a very thin layer with nominal thickness less than 5 nm of low work function metal positioned on the metal oxide semiconductor active layer, the work function of the low work function metal being one of equal to and lower than a work function of the metal oxide semiconductor active layer, and a barrier layer of high work function metal positioned on the low work function metal, the work function of the high work function metal being one of equal to and greater than the work function of the metal oxide semiconductor active layer.
16. The method as claimed in claim 1 wherein, during the step of heating the thin film transistor on the substrate in an oxygen-containing ambience, the source/drain metal contacts shield the contact portions of the metal oxide semiconductor active layer on each side of the channel region from the oxidizing ambience, whereby the contact portions on both sides of the channel portion retain the high carrier concentration.
17. The method as claimed in claim 1 wherein, during the step of heating the thin film transistor on the substrate in an oxygen-containing ambience, the etch stop passivation layer conveys oxygen therethrough to reach the active channel, thereby reducing its carrier concentration and moving the threshold voltage towards positive side.
18. The method as claimed in claim 17 wherein the etch stop passivation layer includes material containing oxygen, the oxygen being released during the heating steps during heating before and after source/drain electrodes forming to reach the active channel, thereby reducing its carrier concentration and moving the threshold voltage towards positive side.
19. The method as claimed in claim 1 wherein the etch-stop/passivation layer is an inorganic insulator.
20. The method as claimed in claim 19 , wherein the inorganic insulator is selected from one of SiO2, SiONx, Al2O3, Ta2O5, TiO2, MgO, B2O3, ZrO2, Y2O3, HfO2, V2O5, Nb2O5, La2O3, Sc2O3 and combinations thereof.
21. The method as claimed in claim 20 , wherein the inorganic insulator is deposited by a coating process from a solution or sol gel comprising corresponding organometallic/organic molecules.
22. The method as claimed in claim 20 , wherein the inorganic insulator is deposited by a low-temperature, low-power, low-plasma damage CVD or PVD vacuum deposition method.
23. The method as claimed in claim 22 , wherein the CVD method includes PECVD or MOCVD.
24. The method as claimed in claim 22 , wherein the PVD method includes sputter, e-beam or thermal deposition.
25. The method as claimed in claim 20 , wherein the deposition of the inorganic insulator etch stop passivation layer and the deposition of the metal oxide semiconductor layer is carried out consecutively in a deposition system without breaking the vacuum.
26. The method as claimed in claim 25 , wherein the deposition system is an in-line sputtering system, and the sputter targets for the inorganic insulator etch stop passivation layer and for the metal oxide semiconductor layer are either placed in separate sputter chambers separated by a gate valve, or are placed in a single sputter chamber with proper shielding between the two targets to prevent cross-contamination.
27. The method as claimed in claim 25 , wherein the deposition system is a cluster sputter system, and the sputter targets for the inorganic insulator etch stop passivation layer and for the metal oxide semiconductor layer are placed in separate sputter chambers.
28. The method as claimed in claim 25 , wherein the deposition system comprises different deposition units for the metal-oxide semiconductor layer and for the etch-stop/passivation layer, the non-vacuum-break process is achieved by means of a transportation vehicle comprising a load-lock, vacuum-holding chamber.
29. The method as claimed in claim 1 wherein the additional passivation layer(s) on top of the thin film transistor include(s) at least one of: SiNx, SiOxNy, AlN, Al2O3, SiAlON, TaOx, TiO2, and organic material such as polyimide, PMMA, PMGI, polysilane, polysiloxane, spin-on-glass, SAM, surface promoters or photoresists used as planarization layer or bank layer used in display field.
30. The method as claimed in claim 29 wherein the additional passivation layer has a hydrophobic surface on a free-surface side.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/833,462 US9412623B2 (en) | 2011-06-08 | 2015-08-24 | Metal oxide TFT with improved source/drain contacts and reliability |
| US15/225,592 US9768322B2 (en) | 2011-06-08 | 2016-08-01 | Metal oxide TFT with improved source/drain contacts and reliability |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/155,749 US8679905B2 (en) | 2011-06-08 | 2011-06-08 | Metal oxide TFT with improved source/drain contacts |
| US14/175,521 US9117918B2 (en) | 2011-06-08 | 2014-02-07 | Metal oxide TFT with improved source/drain contacts |
| US14/833,462 US9412623B2 (en) | 2011-06-08 | 2015-08-24 | Metal oxide TFT with improved source/drain contacts and reliability |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US14/175,521 Continuation-In-Part US9117918B2 (en) | 2011-06-08 | 2014-02-07 | Metal oxide TFT with improved source/drain contacts |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US15/225,592 Division US9768322B2 (en) | 2011-06-08 | 2016-08-01 | Metal oxide TFT with improved source/drain contacts and reliability |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| US20160056297A1 US20160056297A1 (en) | 2016-02-25 |
| US9412623B2 true US9412623B2 (en) | 2016-08-09 |
Family
ID=55349001
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US14/833,462 Active US9412623B2 (en) | 2011-06-08 | 2015-08-24 | Metal oxide TFT with improved source/drain contacts and reliability |
| US15/225,592 Expired - Fee Related US9768322B2 (en) | 2011-06-08 | 2016-08-01 | Metal oxide TFT with improved source/drain contacts and reliability |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US15/225,592 Expired - Fee Related US9768322B2 (en) | 2011-06-08 | 2016-08-01 | Metal oxide TFT with improved source/drain contacts and reliability |
Country Status (1)
| Country | Link |
|---|---|
| US (2) | US9412623B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170033227A1 (en) * | 2011-06-08 | 2017-02-02 | Gang Yu | Metal oxide tft with improved source/drain contacts and reliability |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105261636B (en) * | 2015-11-05 | 2018-04-27 | 京东方科技集团股份有限公司 | A kind of thin film transistor (TFT), its preparation method, array base palte and display device |
| US10714633B2 (en) | 2015-12-15 | 2020-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
| CN106448473B (en) * | 2016-12-16 | 2017-11-10 | 京东方科技集团股份有限公司 | Display panel motherboard and display panel preparation method |
| WO2019005094A1 (en) * | 2017-06-30 | 2019-01-03 | Intel Corporation | Low contact resistance thin film transistor |
| CN107564922B (en) * | 2017-09-19 | 2020-03-13 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and display device |
| CN107871705B (en) * | 2017-11-10 | 2020-02-07 | 中国电子科技集团公司第四十一研究所 | Manufacturing method of high-precision ultrathin THz thin-film circuit |
| JP2019151892A (en) * | 2018-03-02 | 2019-09-12 | 東京エレクトロン株式会社 | Processing method for metal member, processing apparatus, and evaluation method |
| CN110416087A (en) * | 2019-07-29 | 2019-11-05 | 北方民族大学 | Metal oxide thin-film transistor and preparation method thereof with passivation enhancement layer |
| CN111244110B (en) * | 2020-01-19 | 2023-04-18 | 深圳市华星光电半导体显示技术有限公司 | Display panel and electronic device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090294765A1 (en) * | 2008-05-30 | 2009-12-03 | Fujifilm Corporation | Semiconductor device, method for producing the same, sensor and electro-optical device |
| US7977675B2 (en) * | 2008-04-16 | 2011-07-12 | Hitachi, Ltd. | Semiconductor device and method for manufacturing the same |
| US7977151B2 (en) * | 2009-04-21 | 2011-07-12 | Cbrite Inc. | Double self-aligned metal oxide TFT |
| US20120012840A1 (en) * | 2009-03-31 | 2012-01-19 | Vincent Korthuis | Thin-film Transistor (TFT) With A Bi-layer Channel |
| US8273600B2 (en) * | 2009-04-21 | 2012-09-25 | Chan-Long Shieh | Self-aligned metal oxide TFT with reduced number of masks |
| US20140001462A1 (en) * | 2012-06-28 | 2014-01-02 | Chan-Long Shieh | High mobility stabile metal oxide tft |
| US20140346495A1 (en) * | 2013-05-24 | 2014-11-27 | Chan- Long Shieh | Stable high mobility motft and fabrication at low temperature |
| US9117918B2 (en) * | 2011-06-08 | 2015-08-25 | Cbrite Inc. | Metal oxide TFT with improved source/drain contacts |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6664589B2 (en) * | 2001-08-30 | 2003-12-16 | Micron Technology, Inc. | Technique to control tunneling currents in DRAM capacitors, cells, and devices |
| JP4556407B2 (en) * | 2002-10-04 | 2010-10-06 | 住友金属鉱山株式会社 | Oxide transparent electrode film and method for producing the same, transparent conductive substrate, solar cell, and photodetector |
| US7887385B2 (en) * | 2004-09-24 | 2011-02-15 | Canon Kabushiki Kaisha | Organic EL light emitting element, manufacturing method thereof, and display device |
| US20060197092A1 (en) * | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
| JP5116225B2 (en) * | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | Manufacturing method of oxide semiconductor device |
| KR101206033B1 (en) * | 2006-04-18 | 2012-11-28 | 삼성전자주식회사 | Fabrication method of ZnO Thin Film and ZnO Transistor, and Thin Film Transistor adopting the same |
| JP4609797B2 (en) * | 2006-08-09 | 2011-01-12 | Ｎｅｃ液晶テクノロジー株式会社 | Thin film device and manufacturing method thereof |
| JP5252473B2 (en) * | 2006-10-19 | 2013-07-31 | 独立行政法人産業技術総合研究所 | Conductive pattern forming film, conductive pattern forming method and conductive pattern forming apparatus therefor |
| JP5116290B2 (en) * | 2006-11-21 | 2013-01-09 | キヤノン株式会社 | Thin film transistor manufacturing method |
| KR100843233B1 (en) * | 2007-01-25 | 2008-07-03 | 삼성전자주식회사 | Semiconductor device having air gap adjoining the sidewall of wiring layer and fabrication method thereof |
| KR101334182B1 (en) * | 2007-05-28 | 2013-11-28 | 삼성전자주식회사 | Fabrication method of ZnO family Thin film transistor |
| EP2160770B1 (en) * | 2007-06-01 | 2018-10-24 | Trojan Technologies | Ultraviolet radiation light emitting diode device |
| US7738050B2 (en) * | 2007-07-06 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd | Liquid crystal display device |
| TW201001624A (en) * | 2008-01-24 | 2010-01-01 | Soligie Inc | Silicon thin film transistors, systems, and methods of making same |
| EP2245669A4 (en) * | 2008-01-31 | 2015-05-06 | Univ Northwestern | Solution-processed high mobility inorganic thin-film transistors |
| US8189376B2 (en) * | 2008-02-08 | 2012-05-29 | Micron Technology, Inc. | Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same |
| JP5520496B2 (en) * | 2008-02-19 | 2014-06-11 | 昭和電工株式会社 | Manufacturing method of solar cell |
| US8377743B2 (en) * | 2008-05-21 | 2013-02-19 | Cbrite Inc. | Laser annealing of metal oxide semiconductor on temperature sensitive substrate formations |
| US8455813B2 (en) * | 2009-09-13 | 2013-06-04 | Technion Research And Development Foundation Ltd. | Multi-photon ionization spectrometer |
| KR101402294B1 (en) * | 2009-10-21 | 2014-06-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Method for manufacturing semiconductor device |
| KR101895080B1 (en) * | 2009-11-28 | 2018-10-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and manufacturing method thereof |
| US9224983B2 (en) * | 2010-12-20 | 2015-12-29 | Samsung Electronics Co., Ltd. | Substrate for surface light emitting device and method of manufacturing the substrate, surface light emitting device, lighting apparatus, and backlight including the same |
| US9412623B2 (en) * | 2011-06-08 | 2016-08-09 | Cbrite Inc. | Metal oxide TFT with improved source/drain contacts and reliability |
| CN104779299A (en) * | 2015-04-16 | 2015-07-15 | 京东方科技集团股份有限公司 | Metal oxide thin film transistor, preparation method of transistor, display substrate and display device |
-
2015
- 2015-08-24 US US14/833,462 patent/US9412623B2/en active Active
-
2016
- 2016-08-01 US US15/225,592 patent/US9768322B2/en not_active Expired - Fee Related
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7977675B2 (en) * | 2008-04-16 | 2011-07-12 | Hitachi, Ltd. | Semiconductor device and method for manufacturing the same |
| US20090294765A1 (en) * | 2008-05-30 | 2009-12-03 | Fujifilm Corporation | Semiconductor device, method for producing the same, sensor and electro-optical device |
| US20120012840A1 (en) * | 2009-03-31 | 2012-01-19 | Vincent Korthuis | Thin-film Transistor (TFT) With A Bi-layer Channel |
| US7977151B2 (en) * | 2009-04-21 | 2011-07-12 | Cbrite Inc. | Double self-aligned metal oxide TFT |
| US20110227065A1 (en) * | 2009-04-21 | 2011-09-22 | Chan-Long Shieh | Double self-aligned metal oxide tft |
| US8273600B2 (en) * | 2009-04-21 | 2012-09-25 | Chan-Long Shieh | Self-aligned metal oxide TFT with reduced number of masks |
| US9117918B2 (en) * | 2011-06-08 | 2015-08-25 | Cbrite Inc. | Metal oxide TFT with improved source/drain contacts |
| US20140001462A1 (en) * | 2012-06-28 | 2014-01-02 | Chan-Long Shieh | High mobility stabile metal oxide tft |
| US20140346495A1 (en) * | 2013-05-24 | 2014-11-27 | Chan- Long Shieh | Stable high mobility motft and fabrication at low temperature |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170033227A1 (en) * | 2011-06-08 | 2017-02-02 | Gang Yu | Metal oxide tft with improved source/drain contacts and reliability |
| US9768322B2 (en) * | 2011-06-08 | 2017-09-19 | Cbrite Inc. | Metal oxide TFT with improved source/drain contacts and reliability |
Also Published As
| Publication number | Publication date |
|---|---|
| US9768322B2 (en) | 2017-09-19 |
| US20170033227A1 (en) | 2017-02-02 |
| US20160056297A1 (en) | 2016-02-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9768322B2 (en) | Metal oxide TFT with improved source/drain contacts and reliability | |
| JP5305630B2 (en) | Manufacturing method of bottom gate type thin film transistor and manufacturing method of display device | |
| JP5213421B2 (en) | Oxide semiconductor thin film transistor | |
| JP5698431B2 (en) | Thin film transistor and manufacturing method thereof | |
| JP5110803B2 (en) | FIELD EFFECT TRANSISTOR USING OXIDE FILM FOR CHANNEL AND METHOD FOR MANUFACTURING THE SAME | |
| JP5725698B2 (en) | Amorphous oxide semiconductor and thin film transistor using the amorphous oxide semiconductor | |
| US8624240B2 (en) | Top gate thin film transistor and display apparatus including the same | |
| JP7057795B2 (en) | Thin film transistor, display device with thin film transistor, and method for manufacturing thin film transistor | |
| JP5250929B2 (en) | Transistor and manufacturing method thereof | |
| US7884360B2 (en) | Thin-film device and method of fabricating the same | |
| TWI406418B (en) | Thin film transistor and method of manufacturing the same | |
| US20140239291A1 (en) | Metal-oxide semiconductor thin film transistors and methods of manufacturing the same | |
| US9356156B2 (en) | Stable high mobility MOTFT and fabrication at low temperature | |
| US9748276B2 (en) | Thin film transistor and method of manufacturing the same, array substrate and display device | |
| US8779478B2 (en) | Thin film transistor | |
| KR20220057511A (en) | Thin film trnasistor comprising 2d semiconductor and display device comprising the same | |
| TW201029184A (en) | Semiconductor device and method for manufacturing the same | |
| TW201123441A (en) | Organic light-emitting display and method of manufacturing the same | |
| KR20110080118A (en) | Thin film transistor having etch stop multi-layers and method of manufacturing the same | |
| KR101748787B1 (en) | Thin film transistor and Method of manufacturing the same | |
| JP6500202B2 (en) | Thin film transistor and method of manufacturing thin film transistor | |
| JP2010205932A (en) | Field effect transistor | |
| JP6500203B2 (en) | Thin film transistor and method of manufacturing thin film transistor | |
| JP2014157907A (en) | Thin film transistor and manufacturing method of the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AS | Assignment |
Owner name: CBRITE INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SHIEH, CHAN-LONG;YU, GANG;XIAO, TIAN;AND OTHERS;REEL/FRAME:038328/0600 Effective date: 20160419 |
|
| STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
| AS | Assignment |
Owner name: FULL STRENGTH GROUP LIMITED, HONG KONG Free format text: SECURITY INTEREST;ASSIGNOR:CBRITE INC.;REEL/FRAME:045653/0823 Effective date: 20170519 Owner name: FULL STRENGTH GROUP LIMITED, HONG KONG Free format text: SECURITY INTEREST;ASSIGNOR:CBRITE INC.;REEL/FRAME:045653/0983 Effective date: 20170825 |
|
| AS | Assignment |
Owner name: ABC SERVICES GROUP, INC., SOLELY IN ITS CAPACITY AS ASSIGNEE FOR THE BENEFIT OF CREDITORS OF CBRITE INC., CALIFORNIA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:FULL STRENGTH GROUP LIMITED;REEL/FRAME:048069/0427 Effective date: 20180727 Owner name: ABC SERVICES GROUP, INC., SOLELY IN ITS CAPACITY A Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:FULL STRENGTH GROUP LIMITED;REEL/FRAME:048069/0427 Effective date: 20180727 Owner name: CBRITE INC., CALIFORNIA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:FULL STRENGTH GROUP LIMITED;REEL/FRAME:048069/0427 Effective date: 20180727 |
|
| AS | Assignment |
Owner name: FANTASY SHINE LIMITED, HONG KONG Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ABC SERVICES GROUP, INC.;REEL/FRAME:049879/0645 Effective date: 20181024 |
|
| FEPP | Fee payment procedure |
Free format text: SURCHARGE FOR LATE PAYMENT, SMALL ENTITY (ORIGINAL EVENT CODE: M2554); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |
|
| MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YR, SMALL ENTITY (ORIGINAL EVENT CODE: M2551); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY Year of fee payment: 4 |
|
| AS | Assignment |
Owner name: FULL STRENGTH GROUP LIMITED, HONG KONG Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE LIST OF PROPERTIES SO THAT IT DOES NOT INCLUDE US PATENT NO. 8233212 PREVIOUSLY RECORDED AT REEL: 045653 FRAME: 0823. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT;ASSIGNOR:CBRITE INC.;REEL/FRAME:052377/0853 Effective date: 20170519 Owner name: FULL STRENGTH GROUP LIMITED, HONG KONG Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE LIST OF PROPERTIES SO THAT IT DOES NOT INCLUDE US PATENT NO. 8233212 PREVIOUSLY RECORDED AT REEL: 004653 FRAME: 0983. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT;ASSIGNOR:CBRITE INC.;REEL/FRAME:052377/0913 Effective date: 20170825 Owner name: FANTASY SHINE LIMITED, HONG KONG Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE LIST OF PROPERTIES SO THAT IT DOES NOT INCLUDE US PATENT NO. 8233212 PREVIOUSLY RECORDED ON REEL 049879 FRAME 0645. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ABC SERVICES GROUP, INC.;REEL/FRAME:052384/0761 Effective date: 20181024 Owner name: CBRITE INC., CALIFORNIA Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE LIST OF PROPERTIES SO THAT IT DOES NOT INCLUDE US PATENT NO. 8233212 PREVIOUSLY RECORDED ON REEL 048069 FRAME 0427. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE BY SECURED PARTY;ASSIGNOR:FULL STRENGTH GROUP LIMITED;REEL/FRAME:052384/0832 Effective date: 20180727 Owner name: ABC SERVICES GROUP, INC., SOLELY IN ITS CAPACITY AS ASSIGNEE FOR THE BENEFIT OF CREDITORS OF CBRITE INC., CALIFORNIA Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE LIST OF PROPERTIES SO THAT IT DOES NOT INCLUDE US PATENT NO. 8233212 PREVIOUSLY RECORDED ON REEL 048069 FRAME 0427. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE BY SECURED PARTY;ASSIGNOR:FULL STRENGTH GROUP LIMITED;REEL/FRAME:052384/0832 Effective date: 20180727 Owner name: FULL STRENGTH GROUP LIMITED, HONG KONG Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE LIST OF PROPERTIES SO THAT IT DOES NOT INCLUDE US PATENT NO. 8233212 PREVIOUSLY RECORDED AT REEL: 045653 FRAME: 0983. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT;ASSIGNOR:CBRITE INC.;REEL/FRAME:052377/0913 Effective date: 20170825 |
|
| FEPP | Fee payment procedure |
Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |