CN107871705B - Manufacturing method of high-precision ultrathin THz thin-film circuit - Google Patents
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- CN107871705B CN107871705B CN201711103799.7A CN201711103799A CN107871705B CN 107871705 B CN107871705 B CN 107871705B CN 201711103799 A CN201711103799 A CN 201711103799A CN 107871705 B CN107871705 B CN 107871705B
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
- H01L21/707—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof of thin-film circuits or parts thereof
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- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
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Abstract
The invention discloses a method for manufacturing a high-precision ultrathin THz thin-film circuit, which comprises the following steps of providing a glass substrate; depositing a first metallic copper layer on the surface of the glass substrate; manufacturing a photoresist mask and electroplating a second metal copper layer on the first metal copper layer; removing the photoresist mask, and depositing a silicon dioxide dielectric layer on the surfaces of the first metal copper layer and the second metal copper layer; grinding and leveling the second metal copper layer and the silicon dioxide dielectric layer; manufacturing an ultrathin THz thin film circuit pattern on the silicon dioxide dielectric layer by adopting a thin film processing technology; removing the first metal copper layer and the second metal copper layer to separate the ultrathin THz thin film circuit from the glass substrate; and cleaning the ultrathin THz thin film circuit. The invention improves the processing dimensional accuracy of the ultrathin THz film circuit and reduces the processing difficulty of the ultrathin THz film circuit.
Description
Technical Field
The invention relates to the field of manufacturing of THz thin film circuits, in particular to a high-precision ultrathin THz thin film circuit manufacturing method.
Background
The frequency range of terahertz (THz for short) in the electromagnetic spectrum is approximately 0.1THz to 10 THz. THz waves have unique transients, broadband, coherence and low energy. In recent years, THz waves are more and more concerned by countries in the world due to their unique performance and wide potential application value, and with the deepening of application research and the expansion of interdisciplinary fields, the research and application of THz waves will be in a vigorous development stage.
At present, the terahertz module mainly adopts a structure combining an ultrathin substrate film circuit and guided waves. In order to improve the high-frequency microwave performance, low dielectric constant substrate materials such as quartz, polytetrafluoroethylene and the like are generally adopted at home and abroad. And the thickness of the medium used for reducing the loss is also very thin, such as the typical thickness of the medium is 50 μm or less. As early as 1996, the 585GHz mixer was designed by doctor J.L.Hesler, USA, wherein the thickness of the quartz substrate used was 38 μm, the circuit width was 0.114mm, and the gold plating thickness was 2-3 μm. Meanwhile, several international famous thin film circuit manufacturers, such as ATP, UltraSource, ATC, DITF, etc., have the thinnest quartz substrate circuit products of 76 μm. At present, no thin film circuit products with the thickness of 50 μm or less on the ultra-thin quartz substrate exist in the companies, and the engineering production of the thin film circuit with the thickness of 50 μm or less on the substrate is still in an experimental or immature stage.
Aiming at the difficulty of the processing technology of the ultra-thin medium THz thin film circuit, foreign companies mainly adopt the scheme of thinning the back of the substrate at present, namely: firstly cleaning a quartz substrate, sputtering and depositing a seed layer, then processing a planar integrated circuit pattern on the ultrathin quartz substrate, wherein the processing comprises photoetching circuit patterns, pattern electroplating and etching, after the operations are completed, forming a bonding body by temporarily bonding the ultrathin film circuit substrate and a bearing substrate, and grinding and thinning the ultrathin film circuit substrate. Then the temporary bonding body formed by the ultrathin quartz substrate and the bearing substrate is separated by a chemical method to obtain the ultrathin quartz substrate with a high-precision micro-processing circuit pattern structure, then the appearance of the ultrathin quartz film circuit is cut, and finally the wafer picking and inspection work is carried out.
Because the terahertz frequency band is worked, the thickness of the substrate material required by the circuit is very thin, and can reach 50 mu m or even thinner. The quartz substrate material belongs to a hard and brittle material, has the characteristics of high brittleness, low fracture toughness, very close material elastic limit and strength and the like, and has poor mechanical strength. The thinner the substrate, the more brittle it becomes and the less the corresponding breaking strength becomes. Therefore, the implementation process of the 50 μm thick substrate in the THz frequency band is difficult. At present, the back thinning processing technology inevitably has a series of technical difficulties in the technological links of substrate cleaning, vacuum coating, photoetching graph, electroplating, small-size cutting, chip picking and the like. Especially for the substrate material with the thickness of 30 microns, the mechanical strength can not meet the requirements of the current photoetching and cutting operation.
With the continuous improvement of THz application frequency, the circuit processing size is also continuously reduced, the processing precision is continuously improved, the overall dimension of a thin film circuit is as small as 0.1mm in 1THz frequency band, the processing size precision requirement is less than 5 microns, the THz circuit processing requirement with special overall dimension exists, and the requirements of circuit size cutting and processing precision can not be met by common wafer scribing machines and laser equipment.
In summary, in the prior art, an effective solution is not yet provided for the problem that the ultra-thin THz thin film circuit cannot meet the requirement of the photolithographic etching processing operation due to poor mechanical strength, and the requirement of the ultra-thin THz thin film circuit on the dimensional processing precision cannot be met by the conventional laser and scribing processing methods.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a high-precision ultrathin THz thin film circuit manufacturing method, which improves the processing size precision of the ultrathin THz thin film circuit and reduces the processing difficulty of the ultrathin THz thin film circuit.
The technical scheme adopted by the invention is as follows:
a manufacturing method of a high-precision ultrathin THz thin-film circuit comprises the following steps:
(1) providing a glass substrate;
(2) depositing a first metallic copper layer on the surface of the glass substrate;
(3) manufacturing a photoresist mask and electroplating a second metal copper layer on the first metal copper layer;
(4) removing the photoresist mask, and depositing a silicon dioxide dielectric layer on the surfaces of the first metal copper layer and the second metal copper layer;
(5) grinding and leveling the second metal copper layer and the silicon dioxide dielectric layer;
(6) manufacturing an ultrathin THz thin film circuit pattern on the silicon dioxide dielectric layer by adopting a thin film processing technology;
(7) removing the first metal copper layer and the second metal copper layer to separate the ultrathin THz thin film circuit from the glass substrate;
(8) and cleaning the ultrathin THz thin film circuit.
Further, in the step (2), a first metallic copper layer is deposited on the glass substrate by a sputtering coating method, and the first metallic copper layer on the glass substrate is thickened to 2-3 μm by an electrolytic copper plating method.
Further, in the step (2), the manufacturing of the photoresist mask on the first copper metal layer specifically includes:
uniformly coating a layer of positive photoresist on the surface of the first metal copper layer by using a spin coater to form a photoresist mask;
and after pre-baking, exposing by using a photoetching machine and a photoetching mask offset plate, and then developing and hardening to form a photoresist mask with a plurality of openings.
Further, in the step (2), electroplating a second metallic copper layer on the first metallic copper layer, specifically including:
and D, taking a photoresist mask with a plurality of openings as a template, and adopting copper sulfate copper plating solution to directly plate a second metal copper layer on the first metal copper layer.
Further, a second metal copper layer is plated on the first metal copper layer by direct current with the current density of 20-30 mA/cm2(ii) a The thickness of the second metal copper layer is 13-15 μm.
Further, in the step (4), the photoresist mask is removed, and a silicon dioxide dielectric layer is deposited on the surfaces of the first metal copper layer and the second metal copper layer, which specifically includes:
removing the photoresist mask by using an acetone degumming agent;
and depositing a silicon dioxide dielectric layer on the surfaces of the first metal copper layer and the second metal copper layer by using the first metal copper layer and the second metal copper layer as copper masks and adopting a chemical vapor deposition method.
Further, in the step (5), the silicon dioxide dielectric layer deposited by leveling is thinned by adopting a grinding and polishing method, so that the silicon dioxide dielectric layer is thinned to the thickness of the dielectric required by the ultrathin THz thin film circuit.
Further, in the step (6), the method for manufacturing the THz thin film circuit pattern on the silicon dioxide dielectric layer by using the thin film processing technology comprises the following steps:
cleaning the silicon dioxide dielectric layer by using an ultrasonic cleaning machine to remove pollutants on the surface of the silicon dioxide dielectric layer;
forming a titanium-tungsten-gold composite film layer on the silicon dioxide medium by adopting a vacuum sputtering coating method;
coating a layer of uniform positive photoresist on the titanium-tungsten-gold composite film layer by using a spin coater, carrying out exposure by using a photoetching machine and a photoetching mask offset plate after prebaking, and then developing and hardening the film;
removing a part of the titanium-tungsten-gold composite film layer of the non-THz thin film circuit pattern by using titanium-tungsten corrosive liquid and gold corrosive liquid to form the required ultrathin THz thin film circuit pattern;
and (3) adopting gold potassium citrate gold plating solution to perform direct current gold plating thickening on the THz film circuit pattern to form the final ultrathin THz film circuit pattern.
Furthermore, when the THz thin film circuit is plated with gold by direct current and thickened, the current density is 5-6 mA/cm2(ii) a Coating thickness: 2-3 μm.
Further, in the step (7), the first metal copper layer and the second metal copper layer are removed by adopting ferric trichloride corrosive liquid, so that the ultrathin THz thin film circuit is separated from the glass substrate.
Compared with the prior art, the invention has the beneficial effects that:
(1) the invention adopts the glass substrate support processing method plated with the copper layer film, solves the problems that the processing process of the ultrathin THz thin film circuit cannot be clamped and is easy to crack, and can better ensure the film forming quality of the silicon dioxide medium and reduce the transmission loss of the THz thin film circuit because the surface of the glass substrate is flat and high;
(2) the invention adopts the photoetching and electroplating method to manufacture the copper mask to define the THz film circuit size, ensures the processing precision of the THz film circuit size, adopts the corrosive liquid to remove the copper layer after the circuit is processed, solves the difficult problem of separating the ultrathin THz film circuit from the glass plate, and has the advantages of high processing efficiency, good consistency, accurate circuit size processing, simple operation steps, high processing and manufacturing yield and the like, thereby having good popularization and use values.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the application and, together with the description, serve to explain the application and are not intended to limit the application.
FIG. 1 is a flow chart of a method for manufacturing a high-precision ultra-thin THz thin film circuit according to an embodiment of the invention;
FIG. 2 is a flow chart of a manufacturing process of a high-precision ultrathin THz thin-film circuit disclosed by the embodiment of the invention.
Detailed Description
It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the disclosure. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
As introduced in the background art, the ultra-thin THz thin film circuit in the prior art has low mechanical strength and cannot meet the requirement of photoetching and etching processing operation, and the traditional processing method has poor processing precision and cannot meet the requirement of dimensional precision of the ultra-thin THz thin film circuit.
In an exemplary embodiment of the present application, as shown in fig. 1, there is provided a method for manufacturing a high-precision ultra-thin THz thin film circuit, the method comprising the steps of:
step 101: providing a glass substrate, and depositing a first metal copper layer on the surface of the glass substrate;
step 102: manufacturing a photoresist mask on the first metal copper layer;
step 103: electroplating a second metal copper layer on the first metal copper layer;
step 104: removing the photoresist mask;
step 105: depositing a silicon dioxide dielectric layer on the surfaces of the first metal copper layer and the second metal copper layer;
step 106: grinding and leveling the second metal copper layer and the silicon dioxide dielectric layer;
step 107: manufacturing an ultrathin THz thin film circuit pattern on the silicon dioxide dielectric layer by adopting a thin film processing technology;
step 108: removing the first metal copper layer and the second metal copper layer to separate the ultrathin THz thin film circuit from the glass substrate;
step 109: and cleaning the ultrathin THz thin film circuit to form the finally required ultrathin THz thin film circuit.
In this embodiment, the surface of the selected glass substrate is smooth and flat, and the thickness of the glass substrate is 0.5mm and the size is 50mm × 50 mm.
After a glass substrate is obtained, a first metal copper layer is deposited on the surface of the glass substrate by a sputtering coating method, and then the first metal copper layer on the glass substrate is thickened to 2-3 mu m by an electro-coppering method. In this embodiment, the first metallic copper layer is a TiW/Cu film.
In the step 102, a photoresist mask is manufactured by using a thin film processing technology, and after the photoresist mask is subjected to the photoresist steps of gluing, prebaking, exposing, developing, hardening and the like, the photoresist mask with a plurality of openings is formed on the first metal copper layer, wherein the thickness of the photoresist mask is larger than the thickness of a medium required by the ultrathin THz thin film circuit. The specific process for manufacturing the photoresist mask by adopting the film thin film processing technology comprises the following steps:
step 201: photoetching and gluing, namely coating a layer of uniform AZ4620 type positive photoresist on the first metal copper layer by using a spin coater, wherein the rotation speed of the spin coater is 1000 revolutions per minute, and the gluing thickness is about 15 mu m;
step 202: carrying out prebaking before photoetching, putting the glass substrate in a baking oven at 100 ℃ for heating for 5-6min, and volatilizing part of the solvent of the photoresist mask pattern;
step 203: carrying out photoetching exposure, namely carrying out ultraviolet exposure on the patterned part of the photoresist layer for 60s by using a photoetching machine in cooperation with a photoetching mask offset plate;
step 204: photoetching and developing, namely soaking the exposed glass substrate in a developing solution for 4 minutes, and removing the exposed positive photoresist on the glass substrate to form a plurality of openings on a photoresist mask;
step 205: and (3) photoetching and hardening, namely, putting the glass substrate in a drying oven at the temperature of 110 ℃ to heat for 5-10 min, and forming a photoresist mask with a plurality of openings on the first metal copper layer.
And after a photoresist mask with a plurality of openings is formed on the first metal copper layer, a copper sulfate copper plating solution is adopted to perform direct current electroplating on a second metal copper layer on the first metal copper layer, wherein the thickness of the second metal copper layer is larger than the thickness of the medium required by the ultrathin THz thin film circuit. Wherein, when the direct current is used for copper electroplating, the current density is 20-30 mA/cm2(ii) a The thickness of the second metal copper layer is 13-15 μm.
In the step 104, the acetone degumming agent is adopted to remove the photoresist mask to form a copper mask consisting of the first metal copper layer and the second metal copper layer, and the copper mask is obtained by a photoetching method, so that the general size deviation is less than 3 μm, the external size precision of the THz film circuit can be well ensured, and the processing precision is improved compared with the processing methods such as scribing laser and the like.
In the step 105, a silicon dioxide dielectric layer is formed on the surface of the copper mask by a chemical vapor deposition method, wherein the thickness of the silicon dioxide dielectric layer is 15 μm in this embodiment, and the thickness of the silicon dioxide dielectric layer is greater than the thickness of the final ultra-thin THz thin film circuit required dielectric.
And then, thinning and leveling the silicon dioxide dielectric layer by adopting a grinding and polishing method, and respectively carrying out coarse grinding, fine grinding and polishing steps to ensure that the finish degree of the final silicon dioxide dielectric layer reaches 60/optical polishing, improve the surface smoothness and finish degree of the dielectric, and reduce the circuit loss. The dielectric dioxide layer is thinned to the thickness of the final ultra-thin THz thin film circuit required medium by a grinding and polishing method, in the embodiment, the thickness of the final ultra-thin THz thin film circuit required medium is 10 μm, and the dielectric dioxide layer is thinned to 10 μm by the grinding and polishing method.
In step 107, a THz thin film circuit pattern is formed on the silicon dioxide dielectric layer by a thin film processing process, and the steps of cleaning, sputtering, photolithography and electroplating are respectively performed. The specific method for manufacturing the THz thin film circuit pattern comprises the following steps:
step 301: and cleaning, namely cleaning the silicon dioxide by using an ultrasonic cleaning machine to remove surface pollutants.
Step 302: and sputtering, namely forming a titanium-tungsten-gold composite film layer on the silicon dioxide dielectric layer by adopting a vacuum sputtering coating method.
Step 303: and (3) photoresist homogenizing, namely coating a layer of uniform positive photoresist on the titanium tungsten-gold composite film layer by using a spin coater, wherein the coating rotating speed is 3000-4000 r/min, and the coating thickness is 1-1.3 mu m.
Step 304: carrying out prebaking before photoetching, putting the glass substrate in a baking oven at 100 ℃ for heating for 2-3 min, and volatilizing part of the solvent of the photoresist pattern;
step 305: and (4) photoetching exposure, wherein a photoetching machine is matched with a photoetching mask plate to carry out ultraviolet exposure on the photoresist pattern part for 15 s. During exposure, the circuit pattern is aligned with the boundary position of the silicon dioxide dielectric layer, and the alignment precision is less than 5 mu m so as to ensure the circuit pattern and the circuit outline dimension position precision.
Step 306: photoetching and developing, namely soaking the exposed glass substrate in a developing solution for 40 seconds to remove the exposed positive photoresist on the titanium-tungsten-gold composite film layer;
step 307: performing photoetching hardening, namely putting the glass substrate in a drying oven at the temperature of 110 ℃ for heating for 3-5 min, and volatilizing part of the solvent of the photoresist pattern;
step 308: photoetching corrosion, namely removing a non-pattern part of the titanium-tungsten-gold composite film layer by adopting titanium-tungsten and gold corrosive liquid to form a circuit pattern needing the THz film;
step 309: electroplating, namely adopting gold potassium citrate gold plating solution to carry out direct current gold electroplating on the ultrathin THz thin film graphic circuit for thickening, wherein the current density is 5-6 mA/cm2(ii) a Coating thickness: 2-3 μm to form the final THz thin film circuit pattern.
And after the ultrathin THz thin film circuit graph is obtained, removing the first metal copper layer and the second metal copper layer by adopting ferric trichloride corrosive liquid, so that the THz thin film circuit is separated from the glass substrate. Because the size of the ultrathin THz thin film circuit is small and is generally less than 0.5mm, corrosive liquid can quickly permeate into the circuit, and a copper layer below a silicon dioxide medium is corroded and removed to separate the THz thin film circuit from a glass plate. Because the ferric trichloride corrosive liquid has no corrosion to the gold layer of the circuit, the integrity of the ultrathin THz film circuit can be ensured.
And finally, carrying out organic solvent cleaning, plasma water cleaning and drying on the ultrathin THz thin film circuit to form the ultrathin THz thin film circuit with the silicon dioxide medium thickness of 10 microns and the dimensional accuracy of less than 5 microns.
From the above description, it can be seen that the above-described embodiments of the present application achieve the following technical effects:
(1) the invention adopts the glass substrate support processing method plated with the copper layer film, solves the problems that the processing process of the ultrathin THz thin film circuit cannot be clamped and is easy to crack, and can better ensure the film forming quality of the silicon dioxide medium and reduce the transmission loss of the THz thin film circuit because the surface of the glass substrate is flat and high;
(2) the invention adopts the photoetching and electroplating method to manufacture the copper mask to define the THz film circuit size, ensures the processing precision of the THz film circuit size, adopts the corrosive liquid to remove the copper layer after the circuit is processed, solves the difficult problem of separating the ultrathin THz film circuit from the glass plate, and has the advantages of high processing efficiency, good consistency, accurate circuit size processing, simple operation steps, high processing and manufacturing yield and the like, thereby having good popularization and use values.
Although the embodiments of the present invention have been described with reference to the accompanying drawings, it is not intended to limit the scope of the present invention, and it should be understood by those skilled in the art that various modifications and variations can be made without inventive efforts by those skilled in the art based on the technical solution of the present invention.
Claims (10)
1. A manufacturing method of a high-precision ultrathin THz thin-film circuit is characterized by comprising the following steps:
(1) providing a glass substrate;
(2) depositing a first metallic copper layer on the surface of the glass substrate;
(3) manufacturing a photoresist mask and electroplating a second metal copper layer on the first metal copper layer;
(4) removing the photoresist mask, and depositing a silicon dioxide dielectric layer on the surfaces of the first metal copper layer and the second metal copper layer;
(5) grinding and leveling the second metal copper layer and the silicon dioxide dielectric layer;
(6) manufacturing an ultrathin THz thin film circuit pattern on the silicon dioxide dielectric layer by adopting a thin film processing technology;
(7) removing the first metal copper layer and the second metal copper layer to separate the ultrathin THz thin film circuit from the glass substrate;
(8) and cleaning the ultrathin THz thin film circuit.
2. A method for forming a THz thin film circuit with high precision as claimed in claim 1, wherein in said step (2), a first metallic copper layer is deposited on the glass substrate by a sputtering method, and the first metallic copper layer on the glass substrate is thickened to 2-3 μm by an electrolytic copper plating method.
3. A method for fabricating a high precision ultra-thin THz thin film circuit as claimed in claim 1, wherein said step (2) of fabricating a photoresist mask on said first metallic copper layer comprises:
uniformly coating a layer of positive photoresist on the surface of the first metal copper layer by using a spin coater to form a photoresist mask;
and after pre-baking, exposing by using a photoetching machine and a photoetching mask offset plate, and then developing and hardening to form a photoresist mask with a plurality of openings.
4. A method for forming a THz thin film circuit with high precision as claimed in claim 3, wherein said step (3) of electroplating a second metallic copper layer on said first metallic copper layer comprises:
and D, taking a photoresist mask with a plurality of openings as a template, and adopting copper sulfate copper plating solution to directly plate a second metal copper layer on the first metal copper layer.
5. The method as claimed in claim 4, wherein a second metallic copper layer is DC-plated on the first metallic copper layer at a current density of 20-30 mA/cm2(ii) a The thickness of the second metal copper layer is 13-15 μm.
6. The method as claimed in claim 1, wherein in step (4), the photoresist mask is removed, and a silicon dioxide dielectric layer is deposited on the surface of the first and second copper metal layers, and the method comprises:
removing the photoresist mask by using an acetone degumming agent;
and depositing a silicon dioxide dielectric layer on the surfaces of the first metal copper layer and the second metal copper layer by using the first metal copper layer and the second metal copper layer as copper masks and adopting a chemical vapor deposition method.
7. A method for fabricating a high precision ultra-thin THz thin film circuit as claimed in claim 1, wherein in said step (5), said deposited silicon dioxide dielectric layer is thinned by grinding and polishing to a thickness required for the ultra-thin THz thin film circuit.
8. The method for manufacturing a high-precision ultrathin THz thin-film circuit according to claim 1, wherein in the step (6), the method for manufacturing the THz thin-film circuit pattern on the silicon dioxide dielectric layer by adopting the thin-film processing technology comprises the following steps:
cleaning the silicon dioxide dielectric layer by using an ultrasonic cleaning machine to remove pollutants on the surface of the silicon dioxide dielectric layer;
forming a titanium-tungsten-gold composite film layer on the silicon dioxide medium by adopting a vacuum sputtering coating method;
coating a layer of uniform positive photoresist on the titanium tungsten-gold composite film layer by using a spin coater, exposing by using a photoetching machine and a photoetching mask offset plate, and then developing and hardening;
removing a part of the titanium-tungsten-gold composite film layer of the non-THz thin film circuit pattern by using titanium-tungsten corrosive liquid and gold corrosive liquid to form the required ultrathin THz thin film circuit pattern;
and (3) adopting gold potassium citrate gold plating solution to perform direct current gold plating thickening on the THz film circuit pattern to form the final ultrathin THz film circuit pattern.
9. The method as claimed in claim 7, wherein the THz thin film circuit is plated with gold at a current density of 5-6 mA/cm when the THz thin film circuit is thickened2(ii) a Coating thickness: 2-3 μm.
10. A method for manufacturing a high precision ultra-thin THz thin film circuit as claimed in claim 1, wherein in said step (7), said first metal copper layer and said second metal copper layer are removed by using ferric chloride etchant to separate said ultra-thin THz thin film circuit from said glass substrate.
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| CN1658746A (en) * | 2004-02-19 | 2005-08-24 | 钰德科技股份有限公司 | Method for manufacturing metal shield |
| CN105186091A (en) * | 2015-08-04 | 2015-12-23 | 中国电子科技集团公司第四十一研究所 | Manufacture method of terahertz wave band ultra small metallic waveguide |
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| US8735231B2 (en) * | 2010-08-26 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of dual-gate thin film transistor |
| US9412623B2 (en) * | 2011-06-08 | 2016-08-09 | Cbrite Inc. | Metal oxide TFT with improved source/drain contacts and reliability |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1658746A (en) * | 2004-02-19 | 2005-08-24 | 钰德科技股份有限公司 | Method for manufacturing metal shield |
| CN105186091A (en) * | 2015-08-04 | 2015-12-23 | 中国电子科技集团公司第四十一研究所 | Manufacture method of terahertz wave band ultra small metallic waveguide |
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