CN108624922B - The method of electroformed layer uniformity is improved in metal microdevices LIGA forming process - Google Patents
The method of electroformed layer uniformity is improved in metal microdevices LIGA forming process Download PDFInfo
- Publication number
- CN108624922B CN108624922B CN201810457726.6A CN201810457726A CN108624922B CN 108624922 B CN108624922 B CN 108624922B CN 201810457726 A CN201810457726 A CN 201810457726A CN 108624922 B CN108624922 B CN 108624922B
- Authority
- CN
- China
- Prior art keywords
- micro element
- metal
- photoresist
- supplementary structure
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/003—3D structures, e.g. superposed patterned layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/10—Moulds; Masks; Masterforms
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Micromachines (AREA)
Abstract
The invention proposes a kind of methods that electroformed layer uniformity is improved in metal microdevices LIGA forming process, and the first negative photoresist is applied first on substrate, carry out front baking, are exposed, and develop, and carry out being baked into hard glue film；Conductive metal is sputtered on the patterned first negative photoresist glue film, obtains metal seed layer；Positive photoresist is coated on the seed layer, after front baking, exposure, development, by the pattern transfer of supplementary structure to positive photoresist glue film, that is, forms masking layer；Seed layer is corroded, the seed layer of supplementary structure figure is obtained；The second negative photoresist is coated on the metal substrate with micro element figure and the seed layer with supplementary structure figure, by front baking, exposure is rear to dry, and development obtains the second negative photoresist glue film with micro element and supplementary structure figure；Micro- electroforming metal；Photoresist and supplementary structure electroformed layer are removed, micro element is obtained；The uniformity of this method raising labyrinth micro element.
Description
Technical field
The invention belongs to micro-fabrication technology field, electroformed layer is improved in especially a kind of metal microdevices LIGA forming process
The method of uniformity.
Background technique
With the progress of MEMS (MEMS) technology, metal microdevices are in biomedicine, aerospace, electronics
The fields such as communication have obtained preferable application.Microelectroforming technology based on UV-LIGA technology is the effective of production metal microdevices
One of method.However, the edge effect of electric current causes electric field line to be easy to concentrate in cathode edge, electricity during micro- electroforming
There is cast layer the thickness uniformity difference in the metal microdevices after casting.This cast layer non-uniform phenomenon can not only reduce electroforming effect
Rate extends fabrication cycle, and will affect the dimensional accuracy of metal microdevices, and drastically influencing the subsequent of metal microdevices makes
With.
Current edge effect bring influences when in order to reduce electroforming, improves the uniformity of metal microdevices cast layer, periodical
International Journal of Machine Tools and Manufacture the 7th phase of volume 40 in 2000
Page 1065-1072 propose the method for the outer auxiliary cathode of piece.A frame is placed in the position apart from cathode surface specific range
The auxiliary cathode of type reduces current edge effect by external auxiliary cathode and achievees the purpose that improve uniformity.But the party
The cathode surface of the outer auxiliary cathode of the piece that method uses and the deposition of needs not in the same plane, the improvement to current edge effect
Limitation.With the increase of auxiliary cathode placement location outside piece and deposition cathode distance, when distance is greater than 2.5mm, outside piece
Auxiliary cathode cuts little ice to the improvement of uniformity, and this method is only applicable to the auxiliary yin of some simple graphs
The auxiliary cathode comparison of pole, complex figure is difficult.Periodical " micrometer-nanometer processing technology " the 5th the 45-49 pages of phase proposition in 2008
The method of auxiliary cathode in piece.One layer of Cr/Cu seed layer is first sputtered on the glass substrate, is then spin coated onto AZP4903 positivity
Photoresist, it is by photoetching that micro-structure and secondary graphics is graphical simultaneously, it is micro- to reach improvement finally by electroforming production micro-structure
The purpose of structure uniformity.This method improves uniformity since auxiliary cathode in piece and micro-structure are in same plane
Effect it is more preferable.But since auxiliary cathode takes the mode removed from and removed to this method in piece after the completion of micro element electroforming, because
This changes the initial design of micro element, and the service performance of micro element is caused to be affected to some extent, this is from the angle of design
Degree does not allow.Simultaneously because auxiliary cathode setting is in micro element periphery in piece, to equal inside complicated micro element
Even property improvement is unobvious.Therefore, it explores one kind simply, efficiently, and does not change micro element initial design, raising casting
The method of layer uniformity has great importance.
Summary of the invention
Technical problem solved by the invention, which is to provide in a kind of metal microdevices LIGA forming process, improves electroformed layer
The method of uniformity, to solve in micro element forming process, auxiliary cathode changes micro element prototype structure in uniformity and piece
The problem of.
The technical solution for realizing the aim of the invention is as follows:
The method of electroformed layer uniformity is improved in a kind of metal microdevices LIGA forming process, comprising the following steps:
Step S1, the first negative photoresist of coating on substrate, makes sacrificial layer: applying the first negative photoresist on substrate, into
Row front baking, there is the mask plate of micro element figure to be exposed for covering on substrate, develop, by the pattern transfer of micro element to the
On one negative photoresist glue film, and carry out being baked into hard glue film；
Step S2, it makes seed layer: sputtering conductive metal on the patterned first negative photoresist glue film, obtain conductive gold
Belong to seed layer；
Step S3, it makes masking layer: coating positive photoresist on conductive seed layer, covered by front baking, on substrate
After mask plate with supplementary structure figure is exposed, develops, by the pattern transfer of supplementary structure to positive photoresist glue film
On, that is, form masking layer；
Step S4, seed layer is corroded: patterned masking layer is corroded, remove the conduction other than masking layer
Then metal seed layer removes positive photoresist, obtain the seed layer of supplementary structure figure；
Step S5, the second negative photoresist glue film with micro element and supplementary structure figure is made: with micro element figure
The second negative photoresist of coating covers on substrate by front baking on the metal substrate of shape and seed layer with supplementary structure figure
Covering, there is the mask plate of micro element structure graph and supplementary structure figure to be exposed, rear to dry, development, obtain with micro element and
The negative photoresist glue film of the second of supplementary structure figure；
Step S6, the glue film made micro- electroforming metal: is put into the electroforming that micro element is carried out in electroforming solution；
Step S7, photoresist and supplementary structure electroformed layer are removed, micro element is obtained.
Compared with prior art, the present invention its remarkable advantage:
(1) method that electroformed layer uniformity is improved in metal microdevices LIGA forming process of the invention, can by addition
The supplementary structure of removal solves the problems, such as that auxiliary cathode changes micro element initial design in piece in existing method, guarantees
The service performance of micro element.
(2) present invention, which breaches auxiliary cathode in piece, can only be arranged in the limitation of micro element periphery, and supplementary structure can root
Contoured design is carried out according to micro element figure, there is more efficient reality on improving the uniformity with labyrinth micro element
The property used.
(3) generated in seed layer of the supplementary structure of the present invention on glue film, be not directly on the metallic substrate electro-deposition at
Type, lift-off processing are more simple and efficient.
Present invention is further described in detail with reference to the accompanying drawing.
Detailed description of the invention
Fig. 1 is the flow diagram of the method for the present invention.
Fig. 2 is the three dimensional structure diagram of micro element in embodiment 1.
Fig. 3 is that BN303 glue film exposes schematic diagram.
Fig. 4 is the mask plate lightproof area schematic diagram with metal microdevices figure.
Fig. 5 is schematic diagram after the development of BN303 glue film.
Fig. 6 is schematic diagram after sputtering copper seed layer.
Fig. 7 is that AZ703 glue film exposes schematic diagram.
Fig. 8 is that AZ703 exposes the mask pattern used.
Fig. 9 is schematic diagram after the development of AZ703 glue film.
Figure 10 is that seed layer corrodes and removes schematic diagram after AZ703 glue film.
Figure 11 is that SU-8 glue film exposes schematic diagram.
Figure 12 is that SU-8 glue film exposes the mask pattern used.
Figure 13 is schematic diagram after the development of SU-8 glue film.
Figure 14 is schematic diagram after electroforming.
Figure 15 is schematic diagram after removal SU-8 glue, BN303 glue and supplementary structure.
Specific embodiment
In order to illustrate technical solution of the present invention and technical purpose, with reference to the accompanying drawing and specific embodiment is the present invention
It is further to introduce.
In conjunction with Fig. 1, the method that electroformed layer uniformity is improved in a kind of metal microdevices LIGA forming process of the invention, packet
Include following steps:
Step S0, substrate is pre-processed: metal substrate is ground using precise grinding polisher first, is thrown
Light makes base plate surface roughness Ra less than 0.04 μm；Then successively substrate is cleaned by ultrasonic using acetone, ethyl alcohol, finally
Substrate is dried up with nitrogen, and puts it into baking oven and is dried for standby.
Step S1, the first negative photoresist of coating on substrate, makes sacrificial layer: applying the first negative photoresist on substrate, so
After carry out front baking, it is cooling after on substrate covering there is the mask plate of micro element figure to be exposed, develop, by the figure of micro element
Shape is transferred on the first negative photoresist glue film, and carries out being baked into hard glue film.
Negative photoresist is retained in developing process by the part of ultraviolet light direct irradiation, and mask plate shielding part is molten
Solution.So exposing the mask pattern used in sacrificial layer production is micro element figure, in order to by the figure of micro element
It is transferred on metal substrate.
Preferably, the described first negative photoresist uses BN303 photoresist.
Step S2, it makes seed layer: sputtering conductive metal on the patterned first negative photoresist glue film, obtain conductive gold
Belong to seed layer.
Preferably, the conductive metal uses copper.
Step S3, it makes masking layer: coating positive photoresist on conductive seed layer, in substrate after front baking, cooling
After there is the mask plate of supplementary structure figure to be exposed, develop for upper covering, by the pattern transfer of supplementary structure to positive-tone photo
On glue glue film, that is, form masking layer.The figure of supplementary structure is on the basis of the figure of micro element, and outer profile is to external radiation, lubrication groove
Exterior feature is to contract, to form the supplementary structure for including micro element figure.
Positive photoresist is dissolved in developing process by the part of ultraviolet light direct irradiation, and mask plate shielding part is protected
It stays.It is that micro element periphery and internal supplementary structure is arranged in (containing auxiliary that the mask pattern used is exposed in masking layer production
The circuitous pattern of structural conductive), in order to by supplementary structure and conductive connecting pattern transfer on sacrificial layer.
Preferably, the positive photoresist uses AZ703 photoresist.
Step S4, seed layer is corroded: patterned masking layer is corroded, remove the conduction other than masking layer
Then metal seed layer removes positive photoresist, obtain the seed layer of supplementary structure figure.
Step S5, the second negative photoresist glue film with micro element and supplementary structure figure is made: with micro element figure
The second negative photoresist is coated on the metal substrate of shape and seed layer with supplementary structure figure, by front baking, it is cooling after in base
There is the mask plate of micro element structure graph and supplementary structure figure to be exposed for covering on plate, rear to dry, and development obtains having micro-
Second negative photoresist glue film of device and supplementary structure figure.
Negative photoresist is retained in developing process by the part of ultraviolet light direct irradiation, and mask plate shielding part is molten
Solution.Exposing the mask pattern used is micro element and supplementary structure figure, in order to make electroforming micro element and auxiliary
The glue film that structure needs.
Preferably, the described second negative photoresist uses SU-8 photoresist.
Step S6, the glue film made micro- electroforming metal: is put into the electroforming that micro element is carried out in electroforming solution.
Step S7, photoresist and supplementary structure electroformed layer are removed, micro element is obtained: the good micro element of electroforming is immersed second
Negative photoresist is gone in glue, after the second negative photoresist removal is clean, micro element is transferred to the first negative photoresist and is gone in glue,
When the first negative photoresist dissolution and supplementary structure electroformed layer and micro element isolate and fall off, required micro element is obtained.
Embodiment 1,
In conjunction with Fig. 2, below to manufacture metal microdevices 2 on substrate 1, for a specific embodiment of the invention carry out
It is described in detail, below only by taking metal microdevices 2 are with a thickness of 100 μm as an example, each technological parameter can be adjusted by this.Specific step
It is rapid as follows:
Ni substrate pretreatment
Step S0 pre-processes substrate: being ground, is polished to substrate 1 using precise grinding polisher, made Ni-based
1 surface roughness Ra of plate is less than 0.04 μm；Then successively substrate 1 is carried out to be cleaned by ultrasonic each 10min using acetone, ethyl alcohol, most
Substrate is dried up with nitrogen afterwards, and put it into 120 DEG C of baking oven bake 2 hours it is spare.
Substrate 1 uses ni substrate in the present embodiment 1.
Step S1, the first negative photoresist of coating on substrate, makes sacrificial layer:
BN303 glue film 8, whirl coating parameter are coated on substrate 1 using desk-top sol evenning machine are as follows: low speed rotation 600rpm, time 6s；
High speed turns 3000rpm, time 30s, 2~3 μm of 8 thickness of glue film, then carries out front baking on hot plate, and 85 DEG C of temperature, the time
30min.Mask film covering plate 7 is exposed after cooling, is exposed on SUSS litho machine and is carried out, as shown in Figure 3.Mask plate 7 such as Fig. 4
It is shown, time for exposure 20s, exposure dose 180mJ/cm2.Develop after exposure, developing time 105s, in heat after development
Baking post bake is carried out on plate, temperature and time is 85 DEG C respectively, 2h；BN303 glue film 8 after finally obtaining graphically, such as Fig. 5 institute
Show.
3 be metal microdevices figure lightproof area in Fig. 4, and 4 be that supplementary structure and substrate conduct a lightproof area.
Step S2, make seed layer: sputter copper on patterned BN303 glue film 8 using sputter, obtain with a thickness of
The copper seed layer 9 of 200~220nm, as shown in Figure 6.
Step S3, it makes masking layer: coating positive photoresist AZ703 glue film 10, whirl coating parameter on copper seed layer 9 are as follows:
Low speed rotation 600rpm, time 6s；High speed turns 2600rpm, time 30s, 4~5 μm of 10 thickness of glue film；Then before being carried out on hot plate
It dries, 85 DEG C of temperature, time 45min.Mask film covering plate is exposed after cooling, is exposed on SUSS litho machine and is carried out, such as Fig. 7 institute
Show；Mask plate 11 is as shown in figure 8, the time for exposure is 50s, exposure dose 450mJ/cm2.Develop after exposure, when development
Between be 1min, finally obtain patterned masking layer 10, as shown in Figure 9.5 be supplementary structure figure lightproof area in Fig. 8, and 6 are
The connection line graph lightproof area of supplementary structure conduction.
Step S4, seed layer is corroded: masking layer is removed using wet corrosion technique to patterned masking layer 10
Then copper seed layer in addition obtains patterned supplementary structure seed layer 9 using acetone removal AZ703, as shown in Figure 10.It is wet
Method etchant solution is the Fecl3 solution of volumetric concentration 50%, and etching time is 15~20s.
Step S5, production has the second negative photoresist glue film of micro element and supplementary structure figure: in patterned seed
2075 photoresist of spin coating SU-8 on layer 9, whirl coating parameter are low speed rotation 600rpm, time 6s；High speed turns 1000rpm, time 30s,
110~120 μm of 13 thickness of SU-8 glue film then carries out front baking then from smooth 30min in an oven, and 65 DEG C of temperature, 30min；
85 DEG C, time 1h.Mask film covering plate is exposed after cooling, is exposed on SUSS litho machine and is carried out, as shown in figure 11, mask plate
12 figures are as shown in figure 12, time for exposure 50s, exposure dose 450mJ/cm2.It is dried after being carried out on hot plate after exposure, temperature
85 DEG C of degree, time 130s.Develop after cooling, developing time 165s obtains patterned SU-8 glue film 13, such as after development
Shown in Figure 13.In Figure 12,3 be metal microdevices figure lightproof area, 5 supplementary structure figure lightproof areas；
Step S6, micro- electroforming metal: the glue film 13 made is put into electroforming solution and carries out micro- electroformed nickel.Formulation of electroforming solution
Are as follows: 365~375g/L of nickel sulfamic acid, 6~10g/L of nickel chloride, 55~60g/L of boric acid；Micro- electroformed nickel process conditions are as follows: pH value
3.9~4.1,48 DEG C~52 DEG C of temperature, 0.5~1A/dm2 of current density；The electroforming time is 11h, and the schematic diagram after electroforming is as schemed
Shown in 14.
Step S7, photoresist and supplementary structure electroformed layer are removed, micro element is obtained: the good micro element of electroforming is immersed into SU-8
Micro element is transferred to BN303 photoresist after the removal of SU-8 glue is clean by glue glue-dispenser Remove PG, 85 DEG C of heat preservation 4h of water-bath
It goes in glue, impregnates 8-10min, when BN303 dissolution and supplementary structure and micro element 14 isolate and fall off, take out micro element and be used in combination
Deionized water cleans up, and finally obtained metal microdevices are as shown in figure 14, i.e. micro element 2 in Fig. 2.
Metal microdevices 2 derived above with a thickness of 100 μm, when above-mentioned thickness change, technique in seed layer and each step
Parameter can adjust accordingly, and be not limited to the metal microdevices 2 of 100 μ m-thicks.
Using the method proposed by the present invention that can remove supplementary structure in micro element periphery and internal addition, micro- device is improved
The uniformity of part solves the problems, such as that auxiliary cathode changes micro element initial design in piece in existing method, guarantees
The service performance of micro element.Compared with not adding the micro element that electroforming under auxiliary cathode obtains, in current density 1A/dm2, electricity
Under the same terms for casting time 11h, 45.4% is improved using the micro element uniformity that the present invention makes.
Claims (7)
1. improving the method for electroformed layer uniformity in a kind of metal microdevices LIGA forming process, which is characterized in that including following
Step:
Step S1, the first negative photoresist is coated on substrate, makes sacrificial layer: the first negative photoresist is applied on substrate, before progress
It dries, there is the mask plate of micro element figure to be exposed for covering on substrate, develop, and the pattern transfer of micro element is negative to first
On photoresist glue film, and carry out being baked into hard glue film；
Step S2, it makes seed layer: sputtering conductive metal on the patterned first negative photoresist glue film, obtain conductive metal kind
Sublayer；
Step S3, it makes masking layer: coating positive photoresist on conductive seed layer, by front baking, cover and have on substrate
After the mask plate of supplementary structure figure is exposed, develops, by the pattern transfer of supplementary structure to positive photoresist glue film, i.e.,
Form masking layer；
Step S4, seed layer is corroded: patterned masking layer is corroded, remove the conductive metal other than masking layer
Then seed layer removes positive photoresist, obtain the seed layer of supplementary structure figure；
Step S5, the second negative photoresist glue film with micro element and supplementary structure figure is made: with micro element figure
The second negative photoresist is coated on metal substrate and seed layer with supplementary structure figure, and by front baking, tool is covered on substrate
There are micro element structure graph and the mask plate of supplementary structure figure to be exposed, rear to dry, development is obtained with micro element and auxiliary
The negative photoresist glue film of the second of structure graph；
Step S6, the glue film made micro- electroforming metal: is put into the electroforming that micro element is carried out in electroforming solution；
Step S7, photoresist and supplementary structure electroformed layer are removed, micro element is obtained.
2. the method for improving electroformed layer uniformity in metal microdevices LIGA forming process according to claim 1, special
Sign is that the first negative photoresist described in step S1 uses BN303 photoresist.
3. the method for improving electroformed layer uniformity in metal microdevices LIGA forming process according to claim 1, special
Sign is that conductive metal described in step S2 uses copper.
4. the method for improving electroformed layer uniformity in metal microdevices LIGA forming process according to claim 1, special
Sign is that positive photoresist described in step S3 uses AZ703 photoresist.
5. the method for improving electroformed layer uniformity in metal microdevices LIGA forming process according to claim 1, special
Sign is that the second negative photoresist described in step S5 uses SU-8 photoresist.
6. the method for improving electroformed layer uniformity in metal microdevices LIGA forming process according to claim 1, special
Sign is, micro element detailed process is obtained in step S7 are as follows: the good micro element of electroforming is immersed into the second negative photoresist and is gone in glue,
After the second negative photoresist removal is clean, micro element is transferred to the first negative photoresist and is gone in glue, to the first negative photoetching peptization
When solution and supplementary structure electroformed layer and micro element isolate and fall off, required micro element is obtained.
7. the method for improving electroformed layer uniformity in metal microdevices LIGA forming process according to claim 1, special
Sign is, before step S1 further include: step S0, pre-process to substrate: first using precise grinding polisher to Metal Substrate
Plate ground, polishing treatment, is then cleaned and is dried.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810457726.6A CN108624922B (en) | 2018-05-14 | 2018-05-14 | The method of electroformed layer uniformity is improved in metal microdevices LIGA forming process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810457726.6A CN108624922B (en) | 2018-05-14 | 2018-05-14 | The method of electroformed layer uniformity is improved in metal microdevices LIGA forming process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108624922A CN108624922A (en) | 2018-10-09 |
| CN108624922B true CN108624922B (en) | 2019-11-29 |
Family
ID=63693133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810457726.6A Active CN108624922B (en) | 2018-05-14 | 2018-05-14 | The method of electroformed layer uniformity is improved in metal microdevices LIGA forming process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108624922B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111001982A (en) * | 2019-11-25 | 2020-04-14 | 大连理工大学 | Metal copper micro-channel heat sink with comb-tooth structure and manufacturing method |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110055563A (en) * | 2019-05-08 | 2019-07-26 | 中国电子科技集团公司第十四研究所 | A method of improving metal heat sink microchannel electroforming uniformity |
| CN112010259B (en) * | 2019-05-31 | 2024-03-29 | 中国科学技术大学 | Method for transferring porous PDMS film in organ chip |
| CN110607538B (en) * | 2019-09-16 | 2022-03-04 | 中国电子科技集团公司第十二研究所 | Multi-layer processing method of all-metal structure for vacuum device |
| CN113416988B (en) * | 2021-06-21 | 2022-11-08 | 北京世维通科技股份有限公司 | Electroplating method |
| CN113423189B (en) * | 2021-06-21 | 2022-11-25 | 北京世维通科技股份有限公司 | Preparation method of metal electrode |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002266092A (en) * | 2001-03-06 | 2002-09-18 | Hikari Tekku Kk | Manufacturing method by electroforming of various kinds of gold pipes |
| CN1195105C (en) * | 2003-07-03 | 2005-03-30 | 上海交通大学 | Process method of pore based on photolithograph |
| CN1857990B (en) * | 2006-05-18 | 2010-05-12 | 西安交通大学 | Method for making complicate three dimension microstructure or micro device at low cost |
| CN101376996B (en) * | 2008-09-25 | 2010-07-21 | 上海交通大学 | Micro-electroforming apparatus |
| CN102409369B (en) * | 2011-12-01 | 2014-04-16 | 河南理工大学 | Microfine electrocasting device |
| CN103215617B (en) * | 2012-01-18 | 2016-03-02 | 昆山允升吉光电科技有限公司 | A kind of method alleviating fringing effect |
-
2018
- 2018-05-14 CN CN201810457726.6A patent/CN108624922B/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111001982A (en) * | 2019-11-25 | 2020-04-14 | 大连理工大学 | Metal copper micro-channel heat sink with comb-tooth structure and manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108624922A (en) | 2018-10-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108624922B (en) | The method of electroformed layer uniformity is improved in metal microdevices LIGA forming process | |
| CN105186091B (en) | A kind of production method of the extra small metal waveguide of terahertz wave band | |
| US8070970B2 (en) | UV-LIGA process for fabricating a multilayer metal structure having adjacent layers that are not entirely superposed, and the structure obtained | |
| EP2053146A1 (en) | Method for manufacturing electroformed mold, electroformed mold, and method for manufacturing electroformed parts | |
| CN100590062C (en) | Method for making three-dimension electric casting micro structure | |
| US9194052B2 (en) | Method of fabricating a plurality of metallic microstructures | |
| CN108511573A (en) | A kind of preparation method of GaN base light emitting chip | |
| CN105261555A (en) | Method for preparing metal electrode on diamond anvil cell | |
| CN109336048A (en) | A kind of preparation method of the super hydrophobic surface with orientation transportation function | |
| CN110055563A (en) | A method of improving metal heat sink microchannel electroforming uniformity | |
| KR102520738B1 (en) | Method for manufacturing a horological component and component obtained according to this method | |
| CN103329254B (en) | Base material and manufacture method thereof with etching mask | |
| CN107193184A (en) | A kind of method for preparing high-precision chromium plate mask plate circuitous pattern | |
| CN114613666A (en) | Long-life chromium plate photoetching mask plate and preparation method thereof | |
| CN105329849A (en) | MEMS micro array structure processing method based on micro-electroplating | |
| KR20140033736A (en) | Metal mask | |
| CA1268728A (en) | Photoelectroforming mandrel | |
| KR101274155B1 (en) | Method of fabricating metal mask | |
| KR100750314B1 (en) | Mesh type cathode drum for precision electroforming and method for manufacturing | |
| CN105858591A (en) | Metal micro-structure and manufacturing method thereof | |
| CN100505159C (en) | Method for minute graphic representation of metal with non-plane surface | |
| CN107002264A (en) | The manufacture method of electroformed parts | |
| CN102280407A (en) | Manufacturing method of component with patterned side wall | |
| CN107177866B (en) | The method of micro- radio frequency T shape power splitter is prepared in metallic substrates | |
| CN101169589B (en) | Method for manufacturing light guide plate cavity |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |