CN1195105C - Process method of pore based on photolithograph - Google Patents
Process method of pore based on photolithograph Download PDFInfo
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- CN1195105C CN1195105C CNB031296246A CN03129624A CN1195105C CN 1195105 C CN1195105 C CN 1195105C CN B031296246 A CNB031296246 A CN B031296246A CN 03129624 A CN03129624 A CN 03129624A CN 1195105 C CN1195105 C CN 1195105C
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- spray silk
- silk pore
- pore
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Abstract
The present invention relates to a machining method of a silk-jet capillary pore based on a photo etching process, which belongs to the technical field of the production of chemical fiber. The machining method of a silk-jet capillary pore based on a photo etching process comprises the following steps: a mask plate is manufactured according to the shape of the silk-jet capillary pore; a uniform thick photo etching adhesive layer is formed on a conducting substrate; ultraviolet exposure is carried out; a metal structure is obtained by an electric casting process; photo etching adhesive in the silk-jet capillary pore is removed. The present invention solves the problem of the hard machining process of complicated pores and different pores on the same plate. The machining method of a silk-jet capillary pore based on a photo etching process has the characteristics of good flexibility, high accuracy, low cost, capability of being suitable for batch production, etc., and the machining method of a silk-jet capillary pore based on a photo etching process provides the machining method for the manufactured silk-jet capillary pore.
Description
Technical field
What the present invention relates to is a kind of spray silk pore working method, and particularly a kind of spray silk pore working method based on photoetching belongs to the chemical fibre production technical field.
Background technology
Spinning jet is the indispensable precision component of spinning-drawing machine, and orifice is made of guide hole and spray silk pore on the spinning jet.As the spinning jet of chemical fibre parent, its quality is the essential condition that guarantees fibrous finished product quality and good spinning technique.Along with being the development of the chemical fibre industry of feature, the manufacturing and the quality of spinning jet are had higher requirement with " shin-gosen ".Spray silk pore also just develops towards the direction of microporeization, abnormal shapeization, compoundization.The processing quality of spinning jet depends primarily on the processing quality of spray silk pore.Spray silk pore working method commonly used is mechanical workout, electrical spark, line cutting etc. at present.Adopt mechanical workout to make spinning jet, have shortcomings such as cost height, complicated hole processing difficulties.Line patterning method process flexibility is good and precision is high, but its tooling cost is very high, and line patterning method processing minimum aperture is subjected to away the restriction of filament diameter.If process a large amount of spray silk pores with same cross-sectional, electric spark method is relatively cheap, but its working accuracy is a bit weaker, and the hole shape that has can not be processed.
Find by literature search, people such as Y.Cheng are at " Nuclear Instruments and Methods inPhysics Research A ", write articles on vol.467-468 (2001) the pp1192-1197 page or leaf: " Ultra-deepLIGA process and its applications " (" super dark LIGA technology and application thereof ", " nuclear instrument among the physical study A and method "), this article has been introduced employing LIGA, and (LIGA is the abbreviation of German speech, and it mainly comprises three technologies: synchrotron radiation light source X-ray deep layer photoetching process, electroforming process and duplication process) develop spinning jet.Be beneficial to the LIGA technology, the spinning jet that can solve profile hole, complicated hole is made a difficult problem.But the mask plate of synchrotron radiation light source that LIGA need be expensive and special gold system.Its cost of mass production is too high, and it is improved one's methods is the metal die that utilizes LIGA to obtain, and duplicates micropore by injection molded, afterwards the spinning jet that electroforming obtains on conductive substrates.The shortcoming of this method is: can cause injectable plastic material and mould to adhere to during the injection moulding demoulding; The contraction of injectable plastic material can make the size of spray silk pore change and lose precision; And this method still needs the mask plate of synchrotron radiation light source and special gold system.
Summary of the invention
The present invention is directed to the deficiencies in the prior art and defective, a kind of spray silk pore working method based on photoetching is provided, make its processing that utilizes thick rubber ultraviolet light lithography and electroforming process to realize spraying a pore, this working method has that handiness is good, high conformity, precision height, cost are low, be suitable for characteristics such as production in enormous quantities.
The present invention is achieved by the following technical solutions, the inventive method is as follows: at first make mask plate according to the shape of spray silk pore, on conductive substrates, form uniform photoresist layer then, then carry out uv-exposure, carry out electroforming again and obtain metal construction, remove photoresist material in the spray silk pore at last.
Below the present invention is made further qualification, concrete method steps is as follows:
(1) draws the orthographic plan of the spray silk pore on the whole spinning jet, and determine shape, quantity, the position relation of good spray silk pore, make mask plate according to this orthographic plan;
(2) on conductive substrates, form uniform photoresist layer;
(3) on the uv-exposure machine, carry out uv-exposure, preferably adopt contact exposure;
(4) use developing liquid developing, can adopt ultrasonic or million auxiliary developments, spray silk pore planar graph on the mask plate is converted into accurately the three-dimensional photoetching glue microstructure of spray silk pore;
(5) in the cavity of photoresist material, carry out electroforming and obtain metal construction;
(6) after the electroforming, mechanical polishing is carried out on its surface, made the smooth surface after the electroforming smooth, remove photoresist material in the spray silk pore afterwards, can obtain a spray silk pore.
Described conductive substrates is meant: the spinning jet that processes guide hole; adopt paraffin to fill guide hole; and surfacing is clean, at spinning jet surface sputtering one deck thin metal film, get rid of one deck thin photoresist; keep the photoresist film bigger slightly at the guide hole place by photoetching method than guide hole; remove the metallic membrane of not protected by photoresist material with wet etching, the back is removed the photoresist material protective layer and is obtained metallic membrane, and making the spinning jet surface all is conductor; form conductive substrates, be beneficial to electroforming.
The present invention has substantive distinguishing features and marked improvement, the present invention adopts the ultraviolet photolithographic technology, it does not need the mask plate of expensive synchrotron radiation light source and special gold system, but adopts ultraviolet source and general mask plate, has solved problem low-cost and that produce in batches; The present invention adopts thick splicing to touch the ultraviolet photolithographic technology, spray silk pore planar graph on the mask plate is converted into the three-dimensional picture of photoresist material accurately and makes spray silk pore through electroforming, thereby a processing difficult problem that has solved complicated spray silk pore and sprayed the silk pore with the plate abnormity, and the whole spray silk pore course of processing is subsynchronous finishing; Adopt thick splicing touch photoetching technique, can obtain the spray silk pore of higher length-to-diameter ratio, and spray silk pore finish size can be less than 50 microns.This working method has that handiness is good, high conformity, precision height, cost are low, be suitable for characteristics such as production in enormous quantities, provides a kind of working method for making a spray silk pore.
Description of drawings
Fig. 1 is a method flow diagram of the present invention
Embodiment
As shown in Figure 1, the content in conjunction with the inventive method provides following examples:
(1) draws the orthographic plan of the spray silk pore cross-sectional shape on the whole spinning jet, and determine shape (can have multiple poroid), quantity, the position relation of good spray silk pore, make mask plate according to this orthographic plan;
(2) process the spinning jet of guide hole, adopt paraffin to fill guide hole, and surfacing is clean.At spinning jet surface sputtering one deck 800-1000 dust metal copper film.Get rid of one deck thin photoresist (AZ4330) 1-2 micron, keep than the big 5-10 micron of guide hole photoresist film at the guide hole place by photoetching method.Remove the metal copper film of not protected by photoresist material with wet etching (liquor ferri trichloridi), the back is removed the photoresist material protective layer with acetone and is obtained the metal copper film, and making the spinning jet surface all is conductor, forms conductive substrates, is beneficial to electroforming.
(3) whirl coating: get rid of photoresist material with the whirl coating platform on conductive substrates, adopt the SU-8 negative photoresist, photoresist material is carried out preceding baking, remove solvent, condition is: 65 ℃ of half an hour, 95 ℃ 4 hours.For making photoresist layer even, can adopt repeatedly whirl coating mode, or precision cutting, photoresist material thickness is 500 microns in the present embodiment.
(4) exposure: on the uv-exposure machine, adopt the contact ultraviolet photoetching.Exposure intensity 8mW/cm
2, the time shutter is 500 seconds, carries out back baking afterwards, back baking condition is: 55 ℃ of half an hour, 90 ℃ two hours.
(5) develop: use the PGMA developing liquid developing, the time was at 18 minutes.For making micrographics seem cleaner, can adopt ultrasonic or million auxiliary developments.Spray silk pore planar graph on the mask plate is converted into accurately the three-dimensional photoetching glue microstructure of spray silk pore.
(6) electroforming: in the cavity of photoresist material, carry out the nickel electroforming.
(7) remove photoresist: after the electroforming, mechanical polishing is carried out on the surface, made the smooth surface after the electroforming smooth, remove photoresist material afterwards and obtain a spray silk pore, and remove paraffin in the guide hole, and remove the metal copper film with gasoline.
The size deviation of measuring spray silk pore is ± 1 micron.The length-to-diameter ratio scope is at 1-20 (at 500 micron thickness time can form 25 microns deep holes).This working method has that handiness is good, high conformity, precision height, cost are low, be suitable for characteristics such as production in enormous quantities, provides a kind of working method for making a spray silk pore.
Claims (4)
1, a kind of spray silk pore working method based on photoetching, it is characterized in that, at first make mask plate according to the shape of spray silk pore, on conductive substrates, form uniform photoresist layer then, then carry out uv-exposure, carry out electroforming again and obtain metal construction, remove photoresist material in the spray silk pore at last.
2, the spray silk pore working method based on photoetching according to claim 1 is characterized in that, below the present invention is made further qualification, and concrete method steps is as follows:
(1) draws the orthographic plan of the spray silk pore on the whole spinning jet, and determine shape, quantity, the position relation of good spray silk pore, make mask plate according to this orthographic plan;
(2) on conductive substrates, form uniform photoresist layer;
(3) on the uv-exposure machine, carry out uv-exposure;
(4) use developing liquid developing, adopt ultrasonic or million auxiliary developments, spray silk pore planar graph on the mask plate is converted into accurately the three-dimensional photoetching glue microstructure of spray silk pore;
(5) in the cavity of photoresist material, carry out electroforming and obtain metal construction;
(6) after the electroforming, mechanical polishing is carried out on its surface, made the smooth surface after the electroforming smooth, remove photoresist material in the spray silk pore afterwards, can obtain a spray silk pore.
3, the spray silk pore working method based on photoetching according to claim 2 is characterized in that, step (2) is adopted contact exposure.
4, the spray silk pore working method based on photoetching according to claim 1 and 2; it is characterized in that; described conductive substrates is meant: the spinning jet that processes guide hole; adopt paraffin to fill guide hole; and it is surfacing is clean; at spinning jet surface sputtering one deck thin metal film; get rid of one deck thin photoresist; keep the photoresist film bigger slightly at the guide hole place by photoetching method than guide hole; remove the metallic membrane of not protected by photoresist material with wet etching; the back is removed the photoresist material protective layer and is obtained metallic membrane, and making the spinning jet surface all is conductor, forms conductive substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031296246A CN1195105C (en) | 2003-07-03 | 2003-07-03 | Process method of pore based on photolithograph |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031296246A CN1195105C (en) | 2003-07-03 | 2003-07-03 | Process method of pore based on photolithograph |
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| CN1482282A CN1482282A (en) | 2004-03-17 |
| CN1195105C true CN1195105C (en) | 2005-03-30 |
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| CNB031296246A Expired - Fee Related CN1195105C (en) | 2003-07-03 | 2003-07-03 | Process method of pore based on photolithograph |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2963161A4 (en) * | 2013-02-26 | 2016-06-15 | Mitsubishi Rayon Co | Spinning nozzle, process for producing fibrous mass, fibrous mass, and paper |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100390325C (en) * | 2005-05-13 | 2008-05-28 | 大连理工大学 | Method for producing microelectromoulding metal mould |
| CN101033561B (en) * | 2007-03-29 | 2011-01-05 | 上海交通大学 | Method of manufacturing abnormity spinneret |
| CN101812705B (en) * | 2010-03-25 | 2012-02-29 | 大连理工大学 | Ultrasonic processing method for enhancing size accuracy of micro-electroformed apparatus |
| CN105696093B (en) * | 2016-02-02 | 2017-11-07 | 上海环芯电子科技有限公司 | The manufacture method of ultra-fine special-shaped spinneret orifice |
| CN108624922B (en) * | 2018-05-14 | 2019-11-29 | 中国电子科技集团公司第十四研究所 | The method of electroformed layer uniformity is improved in metal microdevices LIGA forming process |
| CN112813467B (en) * | 2019-11-15 | 2022-05-03 | 源秩科技（上海）有限公司 | Electrochemical machining apparatus and method thereof |
| CN114561672B (en) * | 2022-02-18 | 2023-04-28 | 南京工业大学 | Electrochemical additive manufacturing method and device for preparing finite field pattern based on photoetching layering |
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2003
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2963161A4 (en) * | 2013-02-26 | 2016-06-15 | Mitsubishi Rayon Co | Spinning nozzle, process for producing fibrous mass, fibrous mass, and paper |
| EP3208368A3 (en) * | 2013-02-26 | 2017-09-20 | Mitsubishi Chemical Corporation | Fibrous bundle |
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| CN1482282A (en) | 2004-03-17 |
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