CN100390325C - Method for producing microelectromoulding metal mould - Google Patents
Method for producing microelectromoulding metal mould Download PDFInfo
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- CN100390325C CN100390325C CNB2005100464365A CN200510046436A CN100390325C CN 100390325 C CN100390325 C CN 100390325C CN B2005100464365 A CNB2005100464365 A CN B2005100464365A CN 200510046436 A CN200510046436 A CN 200510046436A CN 100390325 C CN100390325 C CN 100390325C
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- electroforming
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- little electroforming
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- 239000002184 metal Substances 0.000 title claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000005323 electroforming Methods 0.000 claims abstract description 67
- 238000000034 method Methods 0.000 claims abstract description 55
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 229920001486 SU-8 photoresist Polymers 0.000 claims abstract description 14
- 238000002203 pretreatment Methods 0.000 claims abstract description 11
- 238000000137 annealing Methods 0.000 claims abstract description 9
- 238000001514 detection method Methods 0.000 claims abstract description 6
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 22
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000012805 post-processing Methods 0.000 claims description 4
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 3
- 239000004327 boric acid Substances 0.000 claims description 3
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 claims description 3
- DITXJPASYXFQAS-UHFFFAOYSA-N nickel;sulfamic acid Chemical compound [Ni].NS(O)(=O)=O DITXJPASYXFQAS-UHFFFAOYSA-N 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 238000005238 degreasing Methods 0.000 claims description 2
- 238000011161 development Methods 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 7
- 238000000465 moulding Methods 0.000 abstract description 5
- 239000004033 plastic Substances 0.000 abstract description 5
- 229920003023 plastic Polymers 0.000 abstract description 5
- 238000007731 hot pressing Methods 0.000 abstract description 2
- 229920000620 organic polymer Polymers 0.000 abstract description 2
- 238000005459 micromachining Methods 0.000 abstract 1
- 229920000307 polymer substrate Polymers 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000000227 grinding Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000010909 process residue Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
Images
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- Moulds For Moulding Plastics Or The Like (AREA)
Abstract
The present invention relates to a method for manufacturing micro-electroforming metal moulds, which belongs to micro-manufacturing technology of micro-electroforming metal mould fields. The present invention comprises procedures of pre-treatment of mould substrate, micro-electroforming master mould manufacture, micro-electroforming, post-treatment of the micro-electroforming and mould detection. A non-back board growth method is adopted, and the non-back board growth method is formed by that micro-structure patterns are directly electroformed on a nickel base board by photoetching mask board irradiation through ultraviolet rays. During the manufacturing procedure of micro-electroforming master moulds, a seed layer is added between SU-8 photoresist and the base board, and vacuum annealing is adopted during the procedure of the post-treatment of the micro-electroforming. The micro-electroforming metal mould manufactured according to the method has the advantages of good sidewall verticality and good surface finish, and solves the problem that the low quality of polymers and plastic products manufactured with large scale and low cost on a basis of a molding method and a hot pressing method. The present invention is suitable for micro-machining of organic polymers and plastic.
Description
Technical field
The invention belongs to the little electroforming metal mould of micro-fabrication technology field.
Background technology
Little electroforming metal mould has higher precision and technical requirement because of it, and produces the needs of making in enormous quantities with its long work-ing life and outstanding economy adaptation, and developed.Present little electroforming metal mould has become the core devices of moulding method, pressure sintering, is widely used for the microfabrication of organic polymer, plastics.The making method of existing little electroforming metal mould is based on silicon substrate " backboard growth method "; as magazine " SCI " o. 11th 1962-1966 page or leaf in 2003 and 2002 the 4th phase 61-65 pages or leaves of magazine " Micrometer-Nanometer Processing Technology ", provide " backboard growth method ".The technical process of backboard growth method is: first growthing silica on silicon substrate, as mask, the wet etching by silicon or the dry etching of silicon obtain the silicon mould of required figure with silicon-dioxide.Then silicon mould is carried out little electroforming of nickel as the master mold of little electroforming.After the electroforming silicon mould eroded and just obtained the nickel metal die.Because the corrosion side becomes 54.74 ° angle with the surface during wet etching, so for high 30 microns passage after document 1 little electroforming, the passage substrate is wide 120 microns, the top is wide 90 microns.Verticality of side wall is bad.Document 2 has solved the bad problem of channel side wall verticality after the electroforming by adopting dry etching (ICP etching) technology of silicon.But electric current is excessive during on the one hand owing to electroforming; The existence of stress in the electroforming process on the other hand causes silicon chip distortion in the electroforming process, causes the nickel die surface to be uneven, and makes that the nickel die surface that finally obtains is comparatively coarse.The microfabrication of polymkeric substance, plastics is badly in need of little electroforming metal mould that verticality of side wall is good, surface smoothness is high at present.
Summary of the invention
The objective of the invention is to overcome the making method defective of traditional little electroforming metal mould based on the backboard growth method, propose a kind of making method of little electroforming metal mould of the no backboard growth that is applicable to moulding method, pressure sintering.Based on little electroforming metal mould of this method have verticality of side wall, surface smoothness good, advantage, solve extensive, the polymkeric substance of low cost production based on moulding method, pressure sintering, the problem that the plastic prod quality is low.
The technical solution used in the present invention is a kind of making method of little electroforming metal mould, the detection operation that comprises the making of mold base pre-treatment, little electroforming master mold, little electroforming, little electroforming aftertreatment, mould, it is characterized in that: adopt " no backboard growth method ", no backboard growth method obtains pattern by ultraviolet (UV) photolithography mask plate 4 exactly, carry out directly electroforming on ni substrate 1 then, in the production process of little electroforming master mold, added the Seed Layer 2 of photoresist material at SU-8 photoresist material 3 and 1 of substrate; In little electroforming postprocessing working procedures, adopt vacuum annealing, the concrete steps of its making method are as follows:
(1) the mold base pre-treatment comprises the mechanical workout pre-treatment and the surface cleaning of high-purity nickel substrate, and surface cleaning adopts the Solvent degreasing method, and organic solvent adopts acetone and ethanol;
(2) in the production process of little electroforming master mold, the alignment process that SU-8 photoresist material 3 and Seed Layer 2 adopt in the photoetching techniques, the development by photoresist material obtains freeboard 5;
(3) in little electroforming process, electroformed nickel metal 6 is filled in the freeboard 5, the prescription of little electroforming electroforming solution is nickel sulfamic acid: 360～380g/L, nickelous chloride: 5～10g/L, boric acid: 50～60g/L; Little electroforming process condition is: the pH value: 3.5～4.0, temperature: 50 ℃～55 ℃, current density 1～2A/dm
2
(4) in little electroforming postprocessing working procedures, to carry out vacuum annealing earlier and handle, its temperature is that 200～800 ℃, time are 60～200 minutes; Carry out ground finish again.
The invention has the beneficial effects as follows: having overcome traditional is the deficiency of " the backboard growth method " of motherboard with the silicon substrate, reduces the internal stress of little electroformed layer; At user's specific requirement, can obtain little electroforming metal mould that verticality of side wall is good, surface smoothness is high; Can solve extensive, the polymkeric substance of low cost production based on moulding method, pressure sintering, the problem that the plastic prod quality is low; Improve the productivity of scale operation.
Description of drawings:
Fig. 1 is based on the making schematic flow sheet of the metal micro-mould of UV-LIGA technology.
Among the figure: 1. mold base pre-treatment, the making of 2. little electroforming master mold, 3. little electroforming, 4. little electroforming aftertreatment, the 5. detection of mould.
Fig. 2 is a photo-mask process, and Fig. 3 is a developing procedure, and Fig. 4 is little electroforming process, and Fig. 5 removes the photoresist material operation.Wherein: 1-ni substrate, 2-Seed Layer, 3-SU-8 photoresist material, 4-mask blank, 5-freeboard, 6-electroformed nickel metal, UV-UV-light.
Embodiment
Below in conjunction with accompanying drawing, describe the concrete embodiment of the present invention in detail.For example: the ni substrate 1 after correct grinding, polishing (63 * 63mm) go up electroforming " word " shapes (the metal micro-mould of 45mm * 80um), it is as follows by the concrete steps of schema 1 that it makes this mould:
1, the pre-treatment of mold base pre-treatment mold base is divided into mechanical workout pre-treatment and two parts of surface cleaning.For reducing base metal and electroforming metal refining on physicals, the difference of dilatation amount aspect particularly, base material is selected highly purified nickel metal.The mechanical processing process of nickel substrate comprises successively: milling, grinding, correct grinding, line cutting and polishing.At last, reach the requirement of certain surfaceness, planeness and smooth finish.The surface cleaning idiographic flow is as follows:
(1) the nickel metal base is put into acetone solvent, about 15 minutes of ultrasonic cleaning;
(2) change brand-new acetone soln, water-bath was boiled about 10 minutes;
(3) will cool off the back acetone soln and pour out, and inject ethanolic soln, water-bath was boiled about 10 minutes;
(4) after the cooling, washed about 8 minutes with deionized water;
(5) hot blast dries up fast, puts into 100 ℃ of oven for drying about 40 minutes.
Before the cleaning operation, preferably adopt the method for manual wiping to remove the residual process residues of substrate surface.
2. the little electroformed mould of the making of little electroforming master mold adopts SU-8 photoresist material 3 technology, is mainly made forming by photoetching process, sees accompanying drawing 2.Specific embodiment and parameter are as follows: KW-4A type sol evenning machine is adopted in experiment, and rotation applies photoresist material.In order to improve the bonding force of SU-8 photoresist material 3 and ni substrate 1, adopt the Seed Layer 2 of homemade photoresist material in the test as SU-8 photoresist material 3.Because Seed Layer 2 is the photoresist material product, need to adopt the alignment operation.The processing parameter of SU-8 photoresist material 3 is: 65 ℃ of pre-bake temperatures, time 18min, 95 ℃, 54min; In 65 ℃ of temperature of baking, time 6min, 95 ℃, 45min.By hard contact exposure, ultraviolet (UV) irradiation, can realize the transfer of micrographics on the photo mask board 4.The microstructure graph that obtains after developing can be seen accompanying drawing 3 directly as female film of little electroforming.
3. little electroforming of little electroformed nickel is exactly the 5 li galvanic deposit that realize nickel of freeboard at female film of little electroforming, sees accompanying drawing 4.After little electroforming, SU-8 photoresist material 3 is removed the blank that has just obtained metal die, see accompanying drawing 5.Electroforming solution adopts unstressed casting nickel prescription, that is:
Nickel sulfamic acid 360～380g/L
Nickelous chloride 5～10g/L
Boric acid 50～60g/L
PH value 3.5～4.0
50 ℃～55 ℃ of temperature
Mixing Machine stirs
4. the little electroforming aftertreatment of little electroforming aftertreatment comprises: correct grinding, the polishing of removing SU-8 photoresist material 3, vacuum annealing and mould.
Adopt SU-8 photoresist material 3 special-purpose glue-dispenser Remove PG to remove SU-8 photoresist materials 3 in the experiment, detailed process is as follows: the cathode device that electroforming is good immerses among the Remove PG, and heating in water bath to 85～90 ℃ are incubated 30～40 minutes, and are aided with ultrasonic vibration.With the place to go internal stress is that the vacuum annealing of purpose is exactly to clean up through the hot pressing die of handling that removes photoresist, and puts into vacuum annealing furnace, is warmed up to 350～400 ℃ after reaching the specified vacuum degree, keeps naturally cooling after 60～90 minutes.Micro-mould after the annealing also will be through correct grinding and polished finish.
5. the detection of the detection mould of mould is last operation that micro-mould is made flow process.Qualified after testing mould just can come into operation.
Claims (1)
1. the making method of a little electroforming metal mould, the detection operation that comprises the making of mold base pre-treatment, little electroforming master mold, little electroforming, little electroforming aftertreatment, mould, it is characterized in that: adopt " no backboard growth method ", no backboard growth method obtains pattern by ultraviolet (UV) photolithography mask plate [4] exactly, carry out then going up direct electroforming at ni substrate [1], in the production process of little electroforming master mold, between SU-8 photoresist material [3] and substrate [1], added the Seed Layer [2] of photoresist material; In little electroforming postprocessing working procedures, adopt vacuum annealing, the concrete steps of its making method are as follows:
(1) the mold base pre-treatment comprises the mechanical workout pre-treatment and the surface cleaning of high-purity nickel substrate, and surface cleaning adopts the Solvent degreasing method, and organic solvent adopts acetone and ethanol;
(2) in the production process of little electroforming master mold, SU-8 photoresist material [3] and Seed Layer [2] adopt the alignment process in the photoetching technique, and the development by photoresist material obtains freeboard [5];
(3) in little electroforming process, electroformed nickel metal [6] is filled in the freeboard [5], the prescription of little electroforming electroforming solution is nickel sulfamic acid: 360～380g/L, nickelous chloride: 5～10g/L, boric acid: 50～60g/L; Little electroforming process condition is: the pH value: 3.5～4.0, temperature: 50 ℃～55 ℃, current density 1～2A/dm
2
(4) in little electroforming postprocessing working procedures, to carry out vacuum annealing earlier and handle, its temperature is that 200～800 ℃, time are 60～200 minutes; Carry out ground finish again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100464365A CN100390325C (en) | 2005-05-13 | 2005-05-13 | Method for producing microelectromoulding metal mould |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100464365A CN100390325C (en) | 2005-05-13 | 2005-05-13 | Method for producing microelectromoulding metal mould |
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| CN1715455A CN1715455A (en) | 2006-01-04 |
| CN100390325C true CN100390325C (en) | 2008-05-28 |
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| CNB2005100464365A Expired - Fee Related CN100390325C (en) | 2005-05-13 | 2005-05-13 | Method for producing microelectromoulding metal mould |
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| CN101101272B (en) * | 2006-07-07 | 2010-10-13 | 中国科学院电子学研究所 | Biochemical microsensing integrated chip, its manufacture and mould preparation method |
| KR100962778B1 (en) * | 2007-12-13 | 2010-06-09 | 현대자동차주식회사 | Mask making method for forming wood grain |
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| CN102618893A (en) * | 2012-04-20 | 2012-08-01 | 大连理工大学 | Method for adjusting micro electroforming current density to improve casting layer interface bonding strength |
| CN102995098B (en) * | 2012-12-04 | 2015-07-01 | 哈尔滨飞机工业集团有限责任公司 | Electric cutting process for electroforming nickel-coated piece |
| CN103103583B (en) * | 2013-01-14 | 2016-03-02 | 大连理工大学 | A kind of metal base makes the method for multiple layer metal movable microstructure |
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| CN103911621B (en) * | 2014-04-04 | 2016-01-06 | 大连理工大学 | A kind of method changing electroformed structure surface energy |
| CN105603468B (en) * | 2015-12-21 | 2018-08-21 | 大连理工大学 | The method that highly dense fine nickel cylindrical-array is prepared in metal nickel substrate |
| CN105908222A (en) * | 2016-05-03 | 2016-08-31 | 岭南师范学院 | Preparation method of precise chip metal mold with low cost and high utilization rate |
| CN108895873B (en) * | 2018-06-14 | 2020-04-28 | 中国电子科技集团公司第十四研究所 | Metal micro-flow heat exchanger based on UV-LIGA technology and preparation method thereof |
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