CN1292977C - Deep submicron three-dimensional rolling mould and its mfg. method - Google Patents
Deep submicron three-dimensional rolling mould and its mfg. method Download PDFInfo
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- CN1292977C CN1292977C CNB2005100427775A CN200510042777A CN1292977C CN 1292977 C CN1292977 C CN 1292977C CN B2005100427775 A CNB2005100427775 A CN B2005100427775A CN 200510042777 A CN200510042777 A CN 200510042777A CN 1292977 C CN1292977 C CN 1292977C
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Abstract
The present invention discloses a deep submicron three-dimensional rolling mould used for manufacturing micro nanometer devices or functional structures and a manufacturing method thereof. The rolling mould comprises a roller, and a resistance type heater is arranged in the roller. The present invention is characterized in that a mould metal layer and a diamond like transition layer of nanometer level thickness are orderly arranged on the surface of the roller to form a deep submicron three-dimensional structure. In the composition of the sectional dimensions of the deep submicron three-dimensional structure, the gradient range alpha of a side wall characteristic is more than 90 DEG and is less than 180 DEG, the range L of lateral dimensions is more than 50 nm, and the range H of longitudinal depth is more than 0 and is less than 50 mum. In the manufacturing method of the mould, exposing depth which changes according to an arbitrary xy position function is directly written on electronic photoresist through adjusting the dose of electronic beam current. After developed, the electronic photoresist forms a deep submicron three-dimensional structure electronic photoresist cavity. A diamond like transition layer of nanometer level thickness is attached in the electronic photoresist cavity by a sputtering technique, and a metal mould body of the thickness of 0.2mm to 0.5mm is formed by precision electrotyping and is rolled in a metal roller provided with a resistor heater.
Description
Technical field
The invention belongs to the micro-fabrication technology field, be particularly related to structure of a kind of deep submicron 3-D mould and preparation method thereof, this deep submicron three-dimensional rolling mould is mainly used in the three-dimensional flow passage structure of organic semiconductor solar cell hetero-junctions place deep submicron 3-D interfacial structure, micro-fluidic device, the microelectronic mechanical sensor hot stamping manufacturing of three-dimensional structure in three-dimensional structure, the micro-actuator spare etc.
Background technology
In traditional micro-fabrication technology, for the making of deep-submicron (promptly less than 500nm) characteristic size device, the main at present conventional manufacture craft (being photoetching+Chemical Physics dry etching) that adopts in the IC etching.Its making characteristics are limited as the bathtub construction form of straight wall, and depth-to-width ratio is less.Making for large-size (being characteristic size micron higher level) device, LIGA technology is to be expected most at present and most widely used technology, be characterized in forming the Zhi Bi exposure area of the big degree of depth by the exposure of the degree of depth on SU8 type photoresist (adopting the X ray exposure), by manufacture crafts such as development, electroforming, produce the components and parts of the big depth-to-width ratio of micron order (can reach more than 20: 1) again.If in conjunction with lift-off (lift-off technology) technology, also can realize the making of the device (as cantilever beam structures) that the bottom is unsettled.Above-mentioned two its common characteristic of class technology are can only make bottom surface, end face, wall to be straight structure, and fabrication cycle is long, cost is higher.
Development along with solar cell, biological micro-fluidic and microreactor spare, various microelectron-mechanical sensing and micro-actuator spare, not only on the feature structure yardstick, require more and more littler (little) to deep-submicron, and more and more higher to the requirement of its character shape 3 D complex degree and accuracy.Above-mentioned common process is not strong to the adaptability of these requirements, and especially to the Three Dimensions Structure of deep-submicron, except that the cost problem, technology realizes going up existence difficulty greatly.
The imprint process of Chu Xianing in recent years, the I of the characteristic dimension of its impression replica reaches 6nm.But all adopt flat mould in the disclosed imprint process, carry out the subregion impression, efficient is lower, and does not have precedent or patent record that the three-dimensional microstructures impression is attempted.
Summary is got up, what little manufacturing was adopted usually is ic manufacturing process (deep-submicron, about 1: 1 of depth-to-width ratio), LIGA or accurate LIGA (micron higher level, depth-to-width ratio 20: the 1 or more) technology of microelectron-mechanical in making, mainly be to decide according to the characteristic dimension of making device.Its common feature is that the micro element of made is simple in structure, the profile in architectural feature cross section is mainly with rectilinear(-al) (bottom surface, end face, sidewall that is feature structure etc. be straight plane).For the requirement on devices that comprises complicate three dimension microstructure at present (as the deep submicron 3-D interface at organic solar cell hetero-junctions place, the deep submicron 3-D member, the little profile of 3 d function on optical frames surface etc. of deep submicron 3-D flow passage structure, microelectron-mechanical sensing and micro-actuator spare in the micro-fluidic device), still there is suitable making difficulty (comprising technology and cost of manufacture) in existing technology.
Summary of the invention
Because existing lithographic method, material cutting process, and above-mentioned ic lithography process etc. can't directly generate the deep-submicron structure at cylindrical surface, more can not form three-dimensional micro-structural profile, the present invention is directed to the hot stamping of following deep submicron 3-D structure, the objective of the invention is to, a kind of band deep submicron three-dimensional rolling mould and preparation method thereof is provided.This mould adopts the mode of continuous revolving-rolling, realizes that the roll extrusion of large-area three-dimensional micro structural component is duplicated, and manufactures efficient thereby increase substantially.
To achieve these goals, the present invention takes following technical solution:
A kind of deep submicron three-dimensional rolling mould, comprise a cylinder, there is resistance type heater cylinder inside, it is characterized in that, this cylinder surface has one deck mould metal level, and on metal level, form deep submicron 3-D microprotrusion structure, on metal level, form the DLC transition zone of one deck nanometer grade thickness again; The sectional dimension of this bulge-structure is combined as: the tilt angle ranges of bulge-structure is 90 °＜α＜180 °, and the transverse width scope of bulge-structure is L＞50nm, vertical depth bounds 0＜H of bulge-structure＜50 μ m.
The preparation method of above-mentioned deep submicron three-dimensional rolling mould comprises the following steps:
(1) at first on planar substrate (as silicon chip) surface, evenly is coated with the electric lithography glue (eurymeric electric lithography glue) of spreading one deck liquid state, under room temperature or heating condition, solidify to form solid-state electric lithography glue-line behind its free levelling with equal glue machine;
(2) adopt conventional electrical bundle direct-write photoetching system, by the dosage of real-time control focused beam line, in the different xy position on electric lithography glue-line surface to degree of deepening exposure, promptly control electron beam z to degree of depth exposure.Exposure depth is taken as the function of x and y position, thereby generates the exposure area of space on three-dimension curved surface border; The focused beam beam spot diameter, is generally less than 6nm, and exposure depth can reach 50 μ m, and therefore can generate xy direction yardstick is that deep-submicron, z are the three-dimensional exposure of micron-sized big depth-to-width ratio area of space to the degree of depth;
(3) developer solution with electronics photoresist correspondence cleans the electric lithography glue-line, and eccysis is exposed the electric lithography glue material in the area of space, and unexposed electric lithography glue partly is retained, and shows the three-dimensional cavity body structure of deep-submicron;
(4) with sputter with the surface of charcoal atomic deposition to electric lithography glue-line deep submicron 3-D cavity body structure, forming thickness is nano level DLC transition layer film.This DLC transition layer film is as the required initial conduction surface of next processing step electroforming;
The DLC transition zone that (5) will generate is as the utmost point in the anodic-cathodic, in electrocasting machine metal deposited in the electric lithography glue-line cavity of deep submicron 3-D structure and forms metal level.The electroforming process is deposited into the macroscopic thickness of mould metal level between 0.2mm～0.5mm, to keep the suitable intensity and the flexibility that twists.
(6) metal die that will have a deep-submicron micro three-dimensional structure twists, stick on the metal roller with thermosetting cement.The material of cylinder should have good thermal conductance, and the resistance-type heater is equipped with, the heating in the time of can realizing roll extrusion process (being production process) in inside.
The deep submicron 3-D microcavity body structure that said method is shaped, the sectional dimension of its bulge-structure is combined as: the 90 °＜α of range of tilt angles of bulge-structure＜180 °, lateral dimension range L＞the 50nm of bulge-structure, vertical depth bounds 0＜H of bulge-structure＜50 μ m.
Deep submicron 3-D structure roll die of the present invention relies on hot stamping technology, its making yardstick to the micro element structure comprises deep-submicron and micron order, adopt the dose controlled focused beam to the eurymeric electric lithography directly write exposure, on electric lithography glue, form value be the z of xy position function to exposure depth, sputter DLC transition zone, precise electrotyping filled micro-structure, the metal rolling mould that final shaping has the deep submicron 3-D structure.The cross section profile complexity of die surface micro-structural can be any, and non-other common process can reach economically.
DLC transition zone between electric lithography glue of the present invention and the metal die body, extremely important to the physics and the chemical characteristic change of metal die micro-structure surface.The DLC transition zone will be attached to the surface of metal die, give the case hardness of mould with self lubricity, corrosion resistance, wearability and appropriateness.Self lubricity has the effect of releasing agent to the disengaging of roll die in the production process and thermoplasticity or thermosetting machined material.The DLC transition zone is as the real surface in producing, and its corrosion resistance plays protective layer in the cleaning (acid ﹠ alkali liquid) of metal die; Wearability and surperficial high rigidity can reduce wearing and tearing, the distortion of deep submicron 3-D structure in the roll extrusion process, thereby improve the service life of roll die.
Description of drawings
Accompanying drawing 1～Fig. 8 (a, b) is the manufacture craft schematic flow sheet of deep submicron 3-D structure roll die.Label among the figure is represented respectively: 1 is the line dosage controller of electron beam exposure apparatus, 2 electron beams for the electron beam exposure apparatus generation, 3 is the three-dimensional exposure area of space of electron beam on electric lithography glue, 4 is electric lithography glue, 5 for supporting the planar substrate of electric lithography glue, 6 are the back deep submicron 3-D structure that forms of electron beam exposure development on electric lithography glue, 7 is the DLC transition zone, 8 thin metal layers (being attached on the DLC transition zone) for electroforming starting stage deposition, the 9 mould metal levels that have the deep submicron 3-D structure after finishing for precise electrotyping, 10 is the heated roller of roll die, 11 for being built in resistance heater in the cylinder, 12 is roll die roll extrusion direction of rotation, 13 is processed thermoplasticity or thermosets, 14 is the support base material of machined material.
In the accompanying drawing: Fig. 1 prepares electric lithography glue 4 films for even glue in substrate 5, Fig. 2 is for carrying out the exposure of dose controlled electron beam scanning on electric lithography glue, Fig. 3 a is that vertically size is made up in exposure, Fig. 3 b electron beam exposes to the sun and directly writes scan mode, Fig. 4 forms the deep submicron 3-D cavity body structure for electric lithography glue exposure area of space development back, Fig. 5 is a sputter DLC transition zone in the electric lithography glue deep submicron 3-D structure, Fig. 6 a and Fig. 6 b are the metal die that comprises the deep submicron 3-D structure that precise electrotyping is shaped, Fig. 7 removes the metal die that contains the deep submicron 3-D structure behind the electric lithography glue, Fig. 8 a is the roll die (F1 that is installed, F2 is the metal die direction that is installed that twists), Fig. 8 b is the roll die general assembly that contains the deep submicron 3-D structure.
Below in conjunction with accompanying drawing preparation method of the present invention is done further to describe in detail.
The specific embodiment
Referring to accompanying drawing.Label in the accompanying drawing is respectively: 1, the line dosage controller of electron beam exposure apparatus, 2, the electron beam that electron beam exposure apparatus produces, 3, the three-dimensional exposure area of space of electron beam on electric lithography glue, 4, electric lithography glue, 5, support the planar substrate of electric lithography glue, 6, the deep submicron 3-D structure that electron beam exposure forms on electric lithography glue after developing, 7, the DLC transition zone, 8, the thin metal layer (being attached on the DLC transition zone) of electroforming starting stage deposition, 9, the metal die layer that has the deep submicron 3-D structure after precise electrotyping is finished, 10, the heated roller of roll die, 11, be built in resistance heater in the cylinder, 12, roll die roll extrusion direction of rotation, 13, processed thermoplasticity or thermosets, 14, the support base material of machined material.
Heated roller 10 of roll die, there is resistance type heater 11 cylinder inside, and this cylinder surface has the DLC transition zone 7 of mould metal level 9 and nanometer grade thickness successively, and the surface constitutes the deep submicron 3-D structure.
Its basic functional principle is: by continuous revolving-rolling mode with apply certain pressure, and, the deep submicron 3-D structure hot stamping on metal die surface is arrived on support base material 14 (the so eurypalynous macromolecular material) surface of any thermoplasticity or heat cured machined material by roll die roll extrusion rotation with cylinder and the heating of metal die body.Its characteristics are: the micro-structural shape can be wide, with low cost for three-dimensional, hot stamping efficient and precision height, feature structure range scale.
The main technique key element that deep submicron three-dimensional rolling mould is made comprises: the DLC transition zone sputtering sedimentation between dose controlled electron-beam direct writing electric lithography glue, electric lithography glue and the metal die body, the precise electrotyping of mold materials (metal).Wherein, the exposure depth that adopts the focused beam of dose controlled press arbitrary function (as y=kx, k is a constant, as long as the mathematical analysis formula can be expressed) the formation variation of xy position on photoresist is the key of shaping deep submicron 3-D structure.Referring to accompanying drawing 2,3a, 3b, the size combinations of the attainable three-dimensional microstructures of this technology is: cross section minimum widith L＞50nm, the depth bounds 0＜H of structure＜50 μ m, 90 °＜α of range of tilt angles＜180 °.Compare with the minute manufacturing technology of routine, the present invention can realize the structure formation of little large scale scope to deep-submicron, and the cross section profile of structure is the arbitrary shape of non-straight.
The DLC transition zone 7 of mould metal level 9 of the present invention and nanometer grade thickness, extremely important to the physics and the chemical characteristic change of metal die micro-structure surface.DLC transition zone 7 will be attached to the surface of metal die, give the case hardness of mould with self lubricity, corrosion resistance, wearability and appropriateness.Self lubricity has the effect of releasing agent to the disengaging of roll die in the production process and thermoplasticity or thermosetting machined material.The DLC transition zone is as the real surface in producing, and its corrosion resistance plays protective layer in the cleaning (acid ﹠ alkali liquid) of metal die; Wearability and surperficial high rigidity can reduce wearing and tearing, the distortion of deep submicron 3-D structure in the roll extrusion process, thereby improve the service life of roll die.The employing of precise electrotyping technology can be finished the deep-submicron micro three-dimensional structure from the transfer process of electric lithography glue to the metal die material.
Deep submicron three-dimensional rolling mould preparation method of the present invention comprises the combination of following technology: electric lithography glue is coated with shop technology (accompanying drawing 1), adopt the electron-beam dose controlled manner on electric lithography glue, to form the technology (accompanying drawing 2 of deep submicron 3-D structure, 3a, 3b), developing process (accompanying drawing 4) after the exposure of electric lithography glue, the sputtering technology of DLC transition zone (accompanying drawing 5), precise electrotyping technology (the accompanying drawing 6a of metal die, 6b), mould degumming tech and roll die manufacture craft (accompanying drawing 7,8a, 8b).Compare with other minute manufacturing technology, the deep submicron three-dimensional rolling mould of the present invention preparation is more suitable for making the ability of little three-dimensional structure product to the deep-submicron yardstick, and adopts the revolving-rolling mode, at aspects such as make efficiency and costs greater advantage is arranged all.
With the example that is made as of certain metal (nickel) roll die, specific implementation process is as follows:
(1) electric lithography glue is coated with the shop.With commercially available equal glue machine suitable eurymeric electric lithography glue (as commercially available eurymeric PMMA electron-like photoresist) is coated with and is layered on flat panel substrates (as the silicon chip after the polishing) surface, treat behind its natural levelling again through room temperature or be heating and curing;
(2) the dark three-dimensional exposure of the micron area of space of pressing is shaped.Adopt e-beam direct write lithography system (producing the RAITH100 type) as Germany, by installing electronic beam current dosage control circuit and real time scan control software thereon additional, set different electronic beam current dosage when beam spot scans the Different Plane position, obtain different exposure depth.Exposure depth H can be taken as the function H=f of desirable xy position, and (x y), thereby generates the three-dimensional area of space that is exposed.The minimum exposure live width of electric lithography glue is 50nm, and exposure depth can reach 50 μ m;
(3) electric lithography glue develops.This electric lithography glue is cleaned the area of space material that eccysis is fallen to be exposed with commercially available suitable developer solution.Unexposed electric lithography glue partly remains, and shows the three-dimensional microcavity body structure (three-dimensional is exposed the anti-shape of area of space) of deep-submicron;
(4) sputter DLC transition zone.Surface (having contained the deep submicron 3-D structural cavity body) after with commercially available sputter the charcoal atomic deposition being developed to electric lithography glue, forming thickness is nano level DLC transition layer film, and as the required initial conduction surface (electrode) of next step electroforming;
(5) precise electrotyping metallic nickel.With the DLC transition zone that generated and metallic nickel target (high-purity nickel material) respectively as negative and positive the two poles of the earth of electroforming, with commercially available precise electrotyping machine and suitable electrolyte metallic nickel ions is deposited and is filled in the electric lithography glue chamer body of deep submicron 3-D structure, form metal nickel mould.Require the electroforming process that the macroscopic thickness of mould is deposited between the 0.2-0.5mm;
(6) slough electric lithography glue from metal nickel mould.Because have the DLC transition zone between electric lithography glue and the nickel, its self lubricity has played the releasing agent effect of interface, metal nickel mould back and electric lithography glue, manual just can finishing peeled off;
(7) the roll extrusion metal nickel mould is made.Because the macroscopic thickness of mould is less than 0.5mm, it has the flexibility that twists of height.Utilize commercially available thermosetting cement, the metal nickel mould (so far for nickel foil shape) that will have a deep submicron 3-D structure sticks on high heat-conducting type metal (as the copper etc.) cylinder, finally forms the cylinder shape and contains the metal nickel mould of deep submicron 3-D structure;
(8) the deep submicron 3-D structure roll die that adopts the present invention to make, utilize the resistance type heater of cylinder inside that cylinder and stable the continuing of the metal nickel mould on it are heated, in continuous roll extrusion mode, the deep submicron 3-D structure hot stamping of nickel die surface is arrived on the plane thermoplasticity or thermosets (as organic glass), realize the productivity processing of the deep submicron 3-D structure on this class material.
Claims (2)
1. a deep submicron three-dimensional rolling mould comprises a cylinder, and there is resistance type heater cylinder inside; It is characterized in that this cylinder surface has one deck mould metal level, and on metal level, form deep submicron 3-D microprotrusion structure, on metal level, form the DLC transition zone of one deck nanometer grade thickness again; The sectional dimension of this bulge-structure is combined as: the tilt angle ranges of bulge-structure is 90 °＜α＜180 °, and the transverse width scope of bulge-structure is L＞50nm, vertical depth bounds 0＜H of bulge-structure＜50 μ m.
2. the preparation method of the described deep submicron three-dimensional rolling mould of claim 1 is characterized in that comprising the following steps:
(1) at first on planar substrate surfaces, evenly is coated with the eurymeric electric lithography glue of spreading one deck liquid state, under room temperature or heating condition, solidify to form solid-state electric lithography glue-line behind its free levelling with equal glue machine;
(2) adopt conventional electrical bundle direct-write photoetching system, dosage by real-time control focused beam line, expose to degree of deepening in different xy position on electric lithography glue-line surface, promptly control electron beam z to degree of depth exposure, exposure depth is taken as the function of x and y position, thereby generates the exposure area of space on three-dimension curved surface border;
(3) developer solution with electronics photoresist correspondence cleans the electric lithography glue-line, shows the three-dimensional cavity body structure of deep-submicron;
(4) with sputter with the surface of charcoal atomic deposition to electric lithography glue-line deep submicron 3-D cavity body structure, forming thickness is nano level diamond transition layer film;
The DLC transition zone that (5) will generate deposits to metal in electrocasting machine in the electric lithography glue-line cavity of deep submicron 3-D structure as the utmost point in the anodic-cathodic; The electroforming process is deposited into the macroscopic thickness of mould metal level between 0.2mm～0.5mm, can obtain the metal die of deep-submicron micro three-dimensional structure;
(6) metal die that will have a deep-submicron micro three-dimensional structure twists, and sticks on inside with thermosetting cement and have on the metal roller of resistance type heater.
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| CN1994859B (en) * | 2005-12-31 | 2011-01-26 | 财团法人工业技术研究院 | Manufacture method of ripple structure film and mould possessing the structure |
| CN101086614B (en) * | 2007-07-03 | 2010-11-10 | 西安交通大学 | Micrometer-class three-dimensional rolling die and its production method |
| CN100585491C (en) * | 2007-08-07 | 2010-01-27 | 山东大学 | Large area periodic array three-dimensional microstructure preparation method |
| CN102107563A (en) * | 2009-12-25 | 2011-06-29 | 鸿富锦精密工业（深圳）有限公司 | Imprinting component, manufacturing method thereof and method for forming brightness enhancement film |
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| CN103926789B (en) * | 2014-02-07 | 2016-04-20 | 南方科技大学 | Nano-imprinting template, system and imprinting method |
| KR102219703B1 (en) | 2014-05-07 | 2021-02-24 | 삼성전자주식회사 | Patterning method using imprint and pattern structure fabricated by the method, and imprinting system |
| TWI620651B (en) * | 2015-08-31 | 2018-04-11 | 伊英克加利福尼亞有限責任公司 | Embossing tool and method for preparation thereof |
| CN105372734B (en) * | 2015-11-02 | 2018-01-19 | 中国科学院重庆绿色智能技术研究院 | Microprismatic retroreflective material fabrication process |
| CN105399046A (en) * | 2015-11-02 | 2016-03-16 | 中国科学院重庆绿色智能技术研究院 | Method for manufacturing inorganic micro-optical elements in batches |
| CN113917583B (en) * | 2020-07-09 | 2023-07-25 | 光群雷射科技股份有限公司 | Transfer printing type manufacturing method of brightness enhancement film and brightness enhancement film |
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