CN1268585A - Upper sacrificial layer processing method - Google Patents
Upper sacrificial layer processing method Download PDFInfo
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- CN1268585A CN1268585A CN 99103267 CN99103267A CN1268585A CN 1268585 A CN1268585 A CN 1268585A CN 99103267 CN99103267 CN 99103267 CN 99103267 A CN99103267 A CN 99103267A CN 1268585 A CN1268585 A CN 1268585A
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Abstract
The present invention relates to processing method of upper sacrifice layer. On the polymethylacrylate titanium sheet, electroforming nickel structure obtained by LIGA technique, rotating coat with ultraviolet glue, dry under 90 deg.C, alignment on UV photoetching machine, expose, develop to obtain glue pattern which can be used as sacrifice layer structure. Sputtering electroplating base, electroplate to obtain metallic supporter. Remove titanium sheet polymethyl acrylate, sacrifice layer, the gripping device with movable part is obtained. Advantages are simple technology and practical.
Description
The invention belongs to photoetching, Micrometer-Nanometer Processing Technology, micromechanics, LIGA technical field, be more suitable for the moving part working method of LIGA technical products.
Existing LIGA technology, as be published in " Micrometer-Nanometer Processing Technology----LIGA technology on the fourth phase in 1993 " Micrometer-Nanometer Processing Technology " ".
The LIGA technology is a new processing technology that grows up in microfabrication, micromechanics, MEMS (micro electro mechanical system) field.Can be used for gear, the joints of optical fibre, connecting rod, clamp of micromechanics etc., the jerkmeter of Mechatronic Systems, micromotor, Micropump etc., the processing of microstructures such as the light monochromator of optical-mechanical system, infrared filtering film, micro element.This technology can also be used for the processing of ray machine electricity bonded complex system, has extraordinary development prospect.
The LIGA technology comprises degree of depth photoetching, electroforming and moulds three main technique links of casting or working method that this also is the common process flow process of this technology.For the device that has moving part to clamp, the joints of optical fibre, jerkmeter etc., depend merely on conventional working method and be difficult to solve, need utilize sacrificial layer technology just can finish the moving part processing of above-mentioned device.
From deliver " Micrometer-Nanometer Processing Technology " literary composition as can be seen, sacrifice layer is to be manufactured on the substrate before LIGA technology begins, then with LIGA technology mask graph with carry out the photoetching of degree of depth X-light after sacrifice layer is aimed at, after LIGA technology is finished, sacrifice layer is removed, also be can be described as down sacrificial layer technology.This technology has several difficult points: 1. mask is made difficulty.Usually the support membrane of LIGA technology mask is opaque, alignment just to need to make permeable alignment mark; 2. aim at the alignment difficulty.The LIGA technology will be carried out degree of depth photoetching, and glue is thick, and the figure that will see clearly under the so thick glue is the comparison difficulty at the hundreds of micron even to millimeter, and along with the thickness increasing of adding to the difficulties; 3. sacrifice layer is made difficulty.The LIGA technology not only will be carried out degree of depth photoetching, but also will carry out the very manufacturing of large ratio of height to width structure, and this just needs glue and substrate that extraordinary bonding force is arranged, and the good bonding power of glue and material has very strong selection performance.And on the other hand, sacrifice layer will be got rid of at last, and this just makes itself and substrate that different performance is arranged, and it could be got rid of like this and does not damage substrate.Will satisfy above-mentioned these requirements simultaneously, the sacrifice layer manufacturing is very difficult.
The objective of the invention is to propose simple, the practical upper sacrificial layer processing method that is used for the mems device moving part of a kind of technology.
The object of the present invention is achieved like this: upper sacrificial layer processing method of the present invention is to be supporter with copper, nickel is that the working method of clamp device of structure is as follows: (A) utilize the LIGA technology to obtain to be electroformed mould by titanium sheet 3 for substrate, polymethylmethacrylate (PMMA) glue 1, nickel is the primary sample of electroformed nickel structure 2; (B) the PMMA glue 1 of the demoulding and electroformed nickel structure 2 do not obtain smooth surface for the body structure surface of one carries out ground finish with primary sample; (C) on smooth surface, rotation is coated with ultraviolet glue 4, and as sacrifice layer; (D) on the ultraviolet photolithographic machine, electroformed nickel structure 2 pattern alignments under the ultraviolet glue 4 on ultraviolet mask plate 5 figures and the sample are exposed by aligming microscope; (E) use the developing liquid developing that matches with ultraviolet glue 4, obtain glue pattern, this glue pattern is as sacrificial layer structure 6; (F) on sacrificial layer structure 6 surfaces of sample, with vacuum thermal evaporation copper facing or other conductive metal layer, this metal level is as galvanized conductive layer; (G) titanium sheet 3 substrates of sample are coated with the insullac of ultraviolet glue 4 or other model; (H) electroplate thickening copper conductive layer, this conductive layer is as the metal support 7 of primary sample electroformed nickel structure 2; (I) sample is put into the agent of acetone appearance and soaked, up to the ultraviolet glue on the titanium sheet 34 is dissolved; (J) sample that obtains is immersed in hydrogen fluorine (HF) acid, just can or be partly dissolved disengaging titanium sheet 3 substrates dissolving; (K) will obtain sample and be immersed in the container that chloroform is housed, PMMA glue 1 will be washed; (L) sample that obtains being put into the agent of acetone appearance soaks, up to being held, takes off sacrificial layer structure 6, the part that glue pattern has glue partly to cover in the primary sample electroformed nickel structure 2 like this, just separate with copper coin metal support 7, form the free mobile 8 in the electroformed nickel structure 2, at last, one is metal support 7 with copper, and electroformed nickel structure 2 products that have moving part just machine.
Advantage of the present invention: 1., thereby realize conventional lithography alignment because alignment is to expose on the ultraviolet photolithographic machine with the ultraviolet mask plate; 2. because sacrifice layer has adopted ultraviolet photoresist, after technology is finished, just can conveniently remove sacrifice layer, and can not influence other parts with acetone; 3. because this technology is after LIGA technology common process is finished, carries out ultraviolet photolithographic again and obtain moving part, can not influence LIGA technology common process process, and sacrificial layer technology is greatly simplified.
Accompanying drawing of the present invention has:
Fig. 1 upper sacrificial layer processing method schema.
Below in conjunction with drawings and Examples the present invention is further described.
The step of the conventional sacrificial layer technology technical process of LIGA technology is: 1. sputter conductive layer; 2. ultraviolet photolithographic; 3. nitric acid wet etching conductive layer; 4. sputter sacrifice layer; 5. ultraviolet photolithographic and wet etching sacrifice layer; 6. be coated with PMMA glue; 7. with X-photomask overlay alignment; 8. synchrotron radiation exposure; 9. develop; 10. electroformed nickel; 11. remove PMMA glue with chloroform; 12. remove sacrifice layer.
Upper sacrificial layer processing method of the present invention is referring to Fig. 1, it is to be coated with ultraviolet glue on the electroforming metallic structure that LIGA technology common process obtains, on the ultraviolet photolithographic machine, use ultraviolet mask plate overlay alignment, through uv-exposure and development, basic conductive layer is electroplated in sputter, conductive layer is electroplated thickening as metal support, remove titanium sheet and ultraviolet glue.
Embodiments of the invention:
With copper is metal support, and nickel is that the working method of clamp device of structure is as follows:
(A) utilize degree of depth photoetching, the electroforming process of LIGA technology, obtaining by titanium sheet 3 is electroformed mould for substrate, polymethylmethacrylate (PMMA) glue 1, and nickel is the primary sample of electroformed nickel structure 2.(B) utilize sandpaper or other instrument and equipment, the PMMA glue 1 of the demoulding and electroformed nickel structure 2 do not obtain a planeness less than 10 microns, the roughness smooth surface less than 5 microns for the body structure surface of one carries out ground finish with primary sample.(C) on smooth surface, the speed rotation of changeing with per minute 500--5000 is coated with ultraviolet glue 4 (AZ1350), and with ultraviolet glue 4 and entire sample 90 ℃ of oven dry 25-30 minute down, this ultraviolet glue 4 is on electroformed nickel structure 2 surfaces, and as sacrifice layer.(D) on the ultraviolet photolithographic machine, resulting sample is fixed with vacuum suck or other method, by aligming microscope with electroformed nickel structure 2 pattern alignments under the ultraviolet glue 4 on ultraviolet mask plate 5 figures and the sample, expose time shutter 1-3 minute behind the aligning.(E) sample is taken off from the ultraviolet photolithographic machine, with the developing liquid developing 1-3 that matches with ultraviolet glue 4 minute, obtain glue pattern, this glue pattern is as sacrificial layer structure 6, need the active part just to be had glue partly to cover in the above-mentioned glue pattern like this in the primary sample electroformed nickel structure 2, and do not need the active part partly to expose out by no glue in the plastic structure.(F) on sacrificial layer structure 6 surfaces of sample, with method copper facing or other conductive metal layers such as vacuum thermal evaporation or ion sputterings, this metal bed thickness 100-200nm, as galvanized conductive layer, this metallic membrane has on electroformed nickel structure 2 surfaces that glue part surface and no glue partly exposes out attached to the sample glue pattern.(G) titanium sheet 3 substrates of sample are coated with the insullac of ultraviolet glue 4 or other model, entire sample is 90-120 ℃ of oven dry 20-30 minute down.(H) on sample, basic with conductive metal layer as electroplating, electroplate the copper coin of thickening copper conductive layer to 0.4-0.6mm, this copper coin is as the metal support 7 of primary sample electroformed nickel structure 2, and is connected by electroformed nickel structure 2 surfaces that conductive metal layer and no glue partly expose out.(I) sample is put into acetone or hold agent with insulation seven corresponding other and soak, dissolved up to insulation seven with ultraviolet glue 4 or other model.(J) sample that obtains is immersed in 50% hydrogen fluorine (HF) acid, soaks more than 12 hours, just can or be partly dissolved and break away from titanium sheet 3 substrates dissolving with structure that copper coin and PMMA glue 1 and electroformed nickel structure 2 are formed.(K) will obtain sample and be immersed in the container that chloroform is housed, and soak more than 12 hours, the container that sample and chloroform will be housed is then put into the ultrasonic cleaning container, and PMMA glue 1 is washed.(L) sample that obtains being put into the agent of acetone appearance soaks, up to being held, takes off sacrificial layer structure 6, the part that glue pattern has glue partly to cover in the primary sample electroformed nickel structure 2 like this, just separate with copper coin metal support 7, form the free mobile 8 in the electroformed nickel structure 2, at last, one is metal support 7 with copper, and electroformed nickel structure 2 products that have moving part just machine.
Another implements sacrificial layer processing method, is metal support 7 with copper, and nickelalloy is the clamp device of electroformed nickel alloy structure.
Another implements sacrificial layer processing method, is metal support 7 with nickel or nickelalloy, and nickel or nickelalloy are the electric connector of structure, fiber optic connector spare, under meter.
Claims (3)
1. upper sacrificial layer processing method is characterized in that: be supporter with copper, nickel is that the working method of clamp device of structure is as follows:
(A) utilize degree of depth photoetching, the electroforming process of LIGA technology, obtaining by titanium sheet (3) is that substrate, polymethylmethacrylate (PMMA) glue (1) are electroformed mould, and nickel is the primary sample of electroformed nickel structure (2);
(B) utilize sandpaper or other instrument and equipment, the PMMA glue (1) of the demoulding and electroformed nickel structure (2) do not obtain a planeness less than 10 microns, the roughness smooth surface less than 5 microns for the body structure surface of one carries out ground finish with primary sample;
(C) on smooth surface, the speed rotation of changeing with per minute 500--5000 is coated with ultraviolet glue (4) (AZ1350), and with ultraviolet glue (4) and entire sample 90 ℃ of oven dry 25-30 minute down, this ultraviolet glue (4) is on electroformed nickel structure (2) surface, and as sacrifice layer;
(D) on the ultraviolet photolithographic machine, resulting sample is fixed with vacuum suck or other method, by aligming microscope with casting nickel structure (2) pattern alignment under the ultraviolet glue (4) on ultraviolet mask plate (5) figure and the sample, expose time shutter 1-3 minute behind the aligning;
(E) sample is taken off from the ultraviolet photolithographic machine, with developing liquid developing 1-3 minute that matches with ultraviolet glue (4), obtain glue pattern, this glue pattern is as sacrificial layer structure (6), need the active part just to be had glue partly to cover in the above-mentioned glue pattern like this in the primary sample electroformed nickel structure (2), and do not need the active part partly to expose out by no glue in the plastic structure;
(F) on sacrificial layer structure (6) surface of sample, with method copper facing or other conductive metal layers such as vacuum thermal evaporation or ion sputterings, this metal bed thickness 100-200nm, as galvanized conductive layer, this metallic membrane has on electroformed nickel structure (2) surface that glue part surface and no glue partly exposes out attached to the sample glue pattern;
(G) titanium sheet (3) substrate of sample is coated with the insullac of ultraviolet glue (4) or other model, entire sample is 90-120 ℃ of oven dry 20-30 minute down;
(H) on sample, basic with conductive metal layer as electroplating, electroplate the copper coin of thickening copper conductive layer to 0.4-0.6mm, this copper coin is as the metal support (7) of primary sample electroformed nickel structure (2), and is connected by electroformed nickel structure (2) surface that conductive metal layer and no glue partly expose out;
(I) sample is put into acetone or hold agent with insulation seven corresponding other and soak, dissolved up to insulation seven with ultraviolet glue (4) or other model;
(J) sample that obtains is immersed in 50% hydrogen fluorine (HF) acid, soaks more than 12 hours, just can with titanium sheet (3) substrate dissolving or be partly dissolved and with the structure disengaging of copper coin and PMMA glue (1) and electroformed nickel structure (2) composition;
(K) will obtain sample and be immersed in the container that chloroform is housed, and soak more than 12 hours, the container that sample and chloroform will be housed is then put into the ultrasonic cleaning container, and PMMA glue (1) is washed;
(L) sample that obtains being put into the agent of acetone appearance soaks, up to being held, takes off sacrificial layer structure (6), the part that glue pattern has glue partly to cover in the primary sample electroformed nickel structure (2) like this, just separate with copper coin metal support (7), form the free mobile (8) in the electroformed nickel structure (2), at last, one is metal support (7) with copper, and electroformed nickel structure (2) product that has moving part just machines.
2. upper sacrificial layer processing method according to claim 1 is characterized in that above-mentioned clamp device is is metal support (7) with copper, and nickelalloy is the clamp device of electroformed nickel alloy structure.
3. upper sacrificial layer processing method according to claim 1 is characterized in that above-mentioned clamp device is is metal support (7) with nickel or nickelalloy, and nickel or nickelalloy are the electric connector of structure, fiber optic connector spare, under meter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB991032675A CN1184351C (en) | 1999-03-30 | 1999-03-30 | Upper sacrificial layer processing method |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB991032675A CN1184351C (en) | 1999-03-30 | 1999-03-30 | Upper sacrificial layer processing method |
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| CN1268585A true CN1268585A (en) | 2000-10-04 |
| CN1184351C CN1184351C (en) | 2005-01-12 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100567582C (en) * | 2006-12-27 | 2009-12-09 | 南京航空航天大学 | Electromoulding processing method for micro-structure on external surface of cylindrical revolving body element |
| US8025782B2 (en) | 2006-03-15 | 2011-09-27 | Doniar Sa | Process for fabricating a monolayer or multilayer metal structure in LIGA technology, and structure obtained |
| CN106098927A (en) * | 2016-08-09 | 2016-11-09 | 江苏艾伦摩尔微电子科技有限公司 | A kind of sandwich style flexible capacitance type pressure transducer and preparation method thereof |
-
1999
- 1999-03-30 CN CNB991032675A patent/CN1184351C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8025782B2 (en) | 2006-03-15 | 2011-09-27 | Doniar Sa | Process for fabricating a monolayer or multilayer metal structure in LIGA technology, and structure obtained |
| CN101038440B (en) * | 2006-03-15 | 2012-05-30 | 劳力士有限公司 | Process for fabricating a monolayer or multilayer metal structure in LIGA technology, and structure obtained |
| US9284654B2 (en) | 2006-03-15 | 2016-03-15 | Rolex Sa | Process for fabricating a monolayer or multilayer metal structure in LIGA technology, and structure obtained |
| US9365941B2 (en) | 2006-03-15 | 2016-06-14 | Rolex S.A. | Process for fabricating a monolayer or multilayer metal structure in LIGA technology, and structure obtained |
| CN100567582C (en) * | 2006-12-27 | 2009-12-09 | 南京航空航天大学 | Electromoulding processing method for micro-structure on external surface of cylindrical revolving body element |
| CN106098927A (en) * | 2016-08-09 | 2016-11-09 | 江苏艾伦摩尔微电子科技有限公司 | A kind of sandwich style flexible capacitance type pressure transducer and preparation method thereof |
| CN106098927B (en) * | 2016-08-09 | 2019-11-15 | 江苏艾伦摩尔微电子科技有限公司 | A kind of sandwich style flexible capacitance type pressure sensor and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| CN1184351C (en) | 2005-01-12 |
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